CN113300212A - Chip-level frequency modulation laser device - Google Patents
Chip-level frequency modulation laser device Download PDFInfo
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- CN113300212A CN113300212A CN202010112821.XA CN202010112821A CN113300212A CN 113300212 A CN113300212 A CN 113300212A CN 202010112821 A CN202010112821 A CN 202010112821A CN 113300212 A CN113300212 A CN 113300212A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
- H01S5/0265—Intensity modulators
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
Abstract
The embodiment of the invention discloses a chip-level frequency modulation laser device. The chip-level frequency modulation laser device comprises a seed light source, a coupling unit and a modulation unit which are integrated on the same optical chip; the seed light source is used for outputting a seed light beam; the coupling unit is arranged between the seed light source and the modulation unit and is used for coupling the seed light beam into the modulation unit; the modulation unit is used for modulating the seed light beam into linear frequency modulation laser under the control of an external modulation signal and outputting the linear frequency modulation laser. All optical devices in the chip-level frequency modulation laser device provided by the embodiment of the invention are integrated on one optical chip, and the chip-level frequency modulation laser device has the advantages of small volume, low cost, small loss and reliable performance.
Description
Technical Field
The embodiment of the invention relates to a laser technology, in particular to a chip-level frequency modulation laser device.
Background
The fast linear frequency modulation laser with narrow line width and large range has important and wide application requirements in the advanced basic subjects and high-tech application fields of laser radar, spectrum, radio frequency signal generation, atomic measurement and the like. At present, the narrow linewidth laser mainly comprises a solid, an optical fiber, an external cavity semiconductor and the like, and the linewidth of the narrow linewidth laser can reach kilohertz (kHz) or even lower. The generated linear frequency modulation laser can be divided into two types, the first type is the effective cavity length of a modulation laser, and the laser frequency can be modulated by adjusting the cavity length because the laser frequency is inversely proportional to the effective cavity length. The direct modulation in the laser cavity mainly adopts methods such as current (such as a semiconductor laser), piezoelectric ceramic PZT (such as an external cavity laser, a fiber laser, a solid laser and the like), temperature (such as a semiconductor laser) and the like, the highest speed can reach dozens of kHz, but the linearity is difficult to guarantee. The other is laser chirp achieved by electro-optical feedback techniques, but the system is complex, the frequency of the chirp is usually limited to the order of kHz.
To achieve faster repetitive chirping, it has been proven to be a viable solution to convert a high speed chirped microwave signal into a high speed chirped laser signal using an external laser cavity modulator in conjunction with a chirped microwave signal source. In the prior art, optical fiber coupled discrete components are adopted, and although the optical fiber coupled discrete components are convenient to connect, each component (such as a laser source, a modulator, a filter and an amplifier) needs to be coupled with an optical fiber twice, and an independent packaging test is also needed, so that the total cost, the coupling loss, the volume and the like are obviously increased, and the scheme is difficult to popularize in a laboratory to form a product.
Disclosure of Invention
The embodiment of the invention provides a chip-level frequency modulation laser device, wherein all optical devices in the chip-level frequency modulation laser device are integrated on an optical chip, and the chip-level frequency modulation laser device has the advantages of small size, low cost, small loss and reliable performance.
The embodiment of the invention provides a chip-level frequency modulation laser device, which comprises a seed light source, a coupling unit and a modulation unit which are integrated on the same optical chip;
the seed light source is used for outputting a seed light beam;
the coupling unit is arranged between the seed light source and the modulation unit and is used for coupling the seed light beam into the modulation unit;
the modulation unit is used for modulating the seed light beam into linear frequency modulation laser under the control of an external modulation signal and outputting the linear frequency modulation laser.
Optionally, the seed light source includes any one of a distributed feedback semiconductor laser, a distributed bragg reflector semiconductor laser, an external cavity feedback semiconductor laser, a grating feedback semiconductor laser, a micro-ring feedback semiconductor laser, or a quantum dot laser.
Optionally, the coupling unit includes at least one of an on-chip integrated waveguide, an on-chip integrated lens, or an on-chip integrated grating.
Optionally, the modulation unit includes any one of a phase modulator, an intensity modulator, an electro-absorption modulator, a carrier suppression double-sideband modulator, or a micro-ring modulator;
the chip-scale frequency modulation laser device further comprises a filtering unit, wherein the filtering unit is used for enabling one sideband of the plurality of sidebands in the output spectrum of the modulation unit to be transmitted.
Optionally, the filtering unit includes any one of a single-order filter formed by a single micro-ring based on a waveguide, a high-order filter coupled by a plurality of micro-rings based on a waveguide, a single-stage mach-zehnder filter, a cascaded mach-zehnder filter, or a waveguide grating filter.
Optionally, the modulation unit includes a carrier-rejection single-sideband modulator.
Optionally, the laser module further comprises an optical amplifier, which is located at the output end of the modulation unit and is used for amplifying and outputting the chirped laser.
Optionally, the external modulation signal is a chirp microwave signal;
the chirp microwave signal is generated by a voltage controlled oscillator or a direct digital synthesizer.
Optionally, the voltage controlled oscillator or the direct digital synthesizer is monolithically or hybrid integrated with the optical chip.
Optionally, the optical device further comprises a control circuit chip, wherein the control circuit chip is integrated with the control circuit of each optical device;
the control circuit chip is monolithically integrated or hybrid integrated with the optical chip.
The chip-level frequency modulation laser device provided by the embodiment of the invention comprises a seed light source, a coupling unit and a modulation unit which are integrated on the same optical chip; outputting a seed light beam required by generating linear frequency modulation laser through a seed light source; the coupling unit is arranged between the seed light source and the modulation unit, receives the seed light beam and couples the seed light beam into the modulation unit; the seed light beam is modulated into linear frequency modulation laser under the control of an external modulation signal through the modulation unit, and the linear frequency modulation laser is output, so that the linear chip-level frequency modulation laser device with high integration level, small volume, low cost, small loss and reliable performance is realized.
Drawings
Fig. 1 is a schematic structural diagram of a chip-scale frequency modulation laser apparatus according to an embodiment of the present invention;
FIG. 2 is a schematic structural diagram of another chip-scale FM laser apparatus according to an embodiment of the present invention;
fig. 3 is a schematic diagram of a spectrum of a laser carrier modulated according to an embodiment of the present invention;
fig. 4 is a schematic structural diagram of a single-order filter formed by a single micro-ring according to an embodiment of the present invention;
FIG. 5 is a schematic structural diagram of a multi-micro-ring coupled high order filter according to an embodiment of the present invention;
fig. 6 is a schematic structural diagram of a waveguide grating filter according to an embodiment of the present invention;
fig. 7 is a schematic structural diagram of another chip-scale frequency modulation laser apparatus according to an embodiment of the present invention;
fig. 8 is a schematic structural diagram of another chip-scale frequency modulation laser apparatus according to an embodiment of the present invention.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings and examples. It is to be understood that the specific embodiments described herein are merely illustrative of the invention and are not limiting of the invention. It should be further noted that, for the convenience of description, only some of the structures related to the present invention are shown in the drawings, not all of the structures.
The terminology used in the embodiments of the invention is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. It should be noted that the terms "upper", "lower", "left", "right", and the like used in the description of the embodiments of the present invention are used in the angle shown in the drawings, and should not be construed as limiting the embodiments of the present invention. In addition, in this context, it is also to be understood that when an element is referred to as being "on" or "under" another element, it can be directly formed on "or" under "the other element or be indirectly formed on" or "under" the other element through an intermediate element. The terms "first," "second," and the like, are used for descriptive purposes only and not for purposes of limitation, and do not denote any order, quantity, or importance, but rather are used to distinguish one element from another. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
Fig. 1 is a schematic structural diagram of a chip-scale frequency modulation laser apparatus according to an embodiment of the present invention. Referring to fig. 1, the chip-scale frequency-modulated laser device provided by the present embodiment includes a seed light source 10, a coupling unit 20, and a modulation unit 30 integrated on the same optical chip 100; the seed light source 10 is used for outputting a seed light beam; the coupling unit 20 is disposed between the seed light source 10 and the modulation unit 30, and is configured to couple the seed light beam into the modulation unit 30; the modulation unit 30 is configured to modulate the seed beam into a chirped laser under the control of the external modulation signal a, and output the chirped laser.
It is understood that optoelectronic integrated circuit (OEIC) is a necessary direction for future optoelectronic developments. Driven by optical communication and data center communication, OEICs have been developed greatly, and will also emerge in large numbers in the future in the face of integrated optoelectronic applications in the fields of 5G, automotive sensors, and consumer electronics. OEIC currently involves a variety of material platforms, commonly indium phosphide (InP), gallium arsenide (GaAs), silicon (Si), silicon dioxide (SiO)2) Lithium niobate (LiNbO)3) Silicon nitride (SiN), polymer or glass, etc. The chip-scale frequency modulation laser device provided by the embodiment can be based on any material platform, and can be selected according to actual process conditions during specific implementation. The seed light source 10 may be a conventional semiconductor single-frequency laser based on InP, GaAs or other materials, or an integrated laser doped in Si material or using quantum dots. The coupling unit 20 may be integrated in the optical coreThe optical waveguide on the sheet 100 forms an optical path between the seed light source 10 and the modulation unit 30, so that optical coupling is achieved, and compared with optical fiber coupling, loss can be effectively reduced, and output performance of the device can be improved. The external control signal a may be a microwave frequency modulation signal provided by a microwave signal source, the microwave frequency modulation signal source may generate a chirp microwave signal with a high repetition frequency (for example, kHz to MHz magnitude) and a large range (for example, hundreds of MHz to tens of GHz), and the modulation unit 30 modulates the seed beam to generate the chirp laser under the control of the external control signal a.
According to the technical scheme of the embodiment, a seed light beam required by linear frequency modulation laser is generated through the output of a seed light source; the coupling unit is arranged between the seed light source and the modulation unit, receives the seed light beam and couples the seed light beam into the modulation unit; the seed light beam is modulated into linear frequency modulation laser under the control of an external modulation signal through the modulation unit, and the linear frequency modulation laser is output, so that the linear chip-level frequency modulation laser device with high integration level, small volume, low cost, small loss and reliable performance is realized.
Optionally, the seed light source 10 includes any one of a distributed feedback semiconductor laser, a distributed bragg reflector semiconductor laser, an external cavity feedback semiconductor laser, a grating feedback semiconductor laser, a micro-ring feedback semiconductor laser, or a quantum dot laser.
It can be understood that the semiconductor laser is formed by using semiconductor materials (such as InP, GaAs, etc.), the quantum dot laser can be formed by doping quantum dots in Si materials, these lasers are small in size and are advantageous for integration in an optical chip, and the Distributed Feedback (DFB) semiconductor laser, the Distributed Bragg Reflector (DBR) semiconductor laser, the external cavity feedback (such as F-P cavity) semiconductor laser, the grating feedback semiconductor laser, and the micro-ring feedback semiconductor laser have good single-frequency performance, and can effectively improve the signal quality of the chirped laser. In other embodiments, the seed light source may also use independent narrow linewidth laser to enter the optical chip including the modulation unit through a coupling manner such as an optical fiber. When the chip-level frequency modulation laser device is used for laser radar or communication, the chip-level frequency modulation laser device can be further integrated with an optical phased array chip.
Optionally, the coupling unit 20 comprises at least one of an on-chip integrated waveguide, an on-chip integrated lens, or an on-chip integrated grating.
It is understood that the coupling between the seed light source 10 and the modulation unit 30 is selected according to the matching relationship between the material system and the laser, and may be waveguide direct end-face coupling, lens coupling or grating coupling, and the specific implementation is selected according to the actual situation, which is not limited in this embodiment of the present invention.
Fig. 2 is a schematic structural diagram of another chip-scale frequency modulation laser device according to an embodiment of the present invention. Referring to fig. 2, optionally, the modulation unit 30 includes any one of a phase modulator, an intensity modulator, an electro-absorption modulator, a carrier rejection double sideband modulator, or a micro-ring modulator; the chip-scale frequency-modulated laser device further comprises a filtering unit 40, wherein the filtering unit 40 is used for enabling one of the plurality of side bands in the output spectrum of the modulating unit 30 to be transmitted.
It will be appreciated that the material of the various modulators may be semiconductor such as Si, GaAs, InP, etc., or may be an electro-optic crystal such as LiNbO3The polymer can also be used, and the specific implementation can be selected according to actual situations. The modulation signal of the modulator may be provided by another microwave frequency modulated signal source that may generate a chirp microwave signal of high repetition frequency (e.g., on the order of kHz to MHz), a wide range (e.g., hundreds of MHz to tens of GHz). Fig. 3 is a schematic diagram of a spectrum of a laser carrier modulated according to an embodiment of the present invention. Referring to fig. 3, after the seed beam passes through the modulator, a single-stage or multi-stage modulation sideband is generated, and the sideband energy distribution is different according to the type of the modulator and the intensity of the modulation signal. By providing the filtering unit 40, one side band can be made transparent (for example +1 order side band), while the carrier and other side bands are blocked.
Optionally, the filtering unit 40 includes any one of a single-order filter formed by a single micro-ring based on a waveguide, a high-order filter coupled by a plurality of micro-rings based on a waveguide, a single-stage mach-zehnder filter, a cascaded mach-zehnder filter, or a waveguide grating filter.
Fig. 4 is a schematic structural diagram of a single-order filter formed by a single microring according to an embodiment of the present invention, fig. 5 is a schematic structural diagram of a high-order filter coupled by multiple microrings according to an embodiment of the present invention, fig. 6 is a schematic structural diagram of a waveguide grating filter according to an embodiment of the present invention, and fig. 6 is a schematic structural diagram of a reflective waveguide grating filter, where when a reflective optical grating filter is used, an optical circulator is further required to derive a sideband selected by reflection. The frequency of the seed light source 10 can be controlled by temperature current or the like so that it is spaced from the filter by a frequency that is just such that the selected sideband can pass through the filter within the microwave signal modulation range.
Optionally, with continued reference to fig. 1, the modulation unit 30 may comprise a carrier-rejection single sideband modulator.
It can be understood that, when the modulation unit 30 selects the carrier-suppressed single-sideband modulator, the 1-stage sideband energy is significantly higher than other sidebands and carriers, so that the filtering unit may not be provided, thereby simplifying the device structure and reducing the cost.
Fig. 7 is a schematic structural diagram of another chip-scale frequency modulation laser apparatus according to an embodiment of the present invention. Referring to fig. 7, optionally, the chip-scale fm laser apparatus provided in this embodiment further includes an optical amplifier 50 located at the output end of the modulation unit 30, where the optical amplifier 50 is configured to amplify and output the chirped laser.
It will be appreciated that the energy of the output beam from the modulation unit 30 or filtered by the filter may be too low to meet the application requirements, and therefore the optical amplifier 50 may be configured to amplify and output the chirped laser. Illustratively, the optical amplifier 50 may be a semiconductor optical amplifier to facilitate integration with an optical chip.
Optionally, the external modulation signal a is a chirp microwave signal; the chirped microwave signal is generated by a voltage controlled oscillator or a direct digital synthesizer.
It is understood that a Voltage Controlled Oscillator (VCO) is an oscillating circuit having an output frequency corresponding to an input control voltage, and can output a chirped microwave signal required by a modulation unit. A Direct Digital Synthesizer (DDS) is a frequency synthesis technology that directly synthesizes a desired waveform from a phase concept, and in combination with a wave frequency mixer, can output a chirped microwave signal required by a modulation unit.
Optionally, the voltage controlled oscillator or the digital synthesizer is monolithically integrated or hybrid integrated with the optical chip.
It is understood that optoelectronic integrated circuits can be structurally classified into a monolithic integration type and a hybrid integration type. Monolithic integration is the integration of both optically and electrically functional devices on a single chip. Hybrid integration is often required because the optics and electronics are made of different materials. For example, electronic components mostly adopt Si materials and processes, while semiconductor lasers are mainly GaAs, InP and the like, and their integration mostly adopts hybrid integration. Illustratively, Si-based optoelectronic integrated chips are based on well-established CMOS processes, the content of which includes fabrication of optical waveguides such as Si, modulators, optical switches, optical emitters and optical detectors on Si substrates, and the construction of functional OEICs. Meanwhile, a required integrated circuit IC can be manufactured on the same Si substrate, so that the problem of process compatibility between large-scale ICs and OEICs can be solved, and the interconnectivity between the large-scale ICs and the OEICs is also solved, so that the Si-based photoelectron integration has good potential.
Fig. 8 is a schematic structural diagram of another chip-scale frequency modulation laser apparatus according to an embodiment of the present invention. Referring to fig. 8, optionally, the present embodiment further includes a control circuit chip 200, where the control circuit chip 200 integrates control circuits of the optical devices; the control circuit chip 200 is monolithically integrated or hybrid integrated with the optical chip 100.
It is understood that the control circuit chip 200 includes control circuits (such as current control, voltage control, temperature control, etc.) required by the laser, the modulator, the filter, the optical amplifier, etc., which can be integrated in the same control circuit chip 200, for example, when the optical chip 100 and the control circuit chip 200 both use Si as the substrate, monolithic integration can be realized, when different substrates are used, hybrid integration can be realized, and the specific implementation can be selected according to actual process conditions.
It is to be noted that the foregoing is only illustrative of the preferred embodiments of the present invention and the technical principles employed. It will be understood by those skilled in the art that the present invention is not limited to the particular embodiments described herein, but is capable of various obvious changes, rearrangements and substitutions as will now become apparent to those skilled in the art without departing from the scope of the invention. Therefore, although the present invention has been described in greater detail by the above embodiments, the present invention is not limited to the above embodiments, and may include other equivalent embodiments without departing from the spirit of the present invention, and the scope of the present invention is determined by the scope of the appended claims.
Claims (10)
1. A chip-level frequency modulation laser device is characterized by comprising a seed light source, a coupling unit and a modulation unit which are integrated on the same optical chip;
the seed light source is used for outputting a seed light beam;
the coupling unit is arranged between the seed light source and the modulation unit and is used for coupling the seed light beam into the modulation unit;
the modulation unit is used for modulating the seed light beam into linear frequency modulation laser under the control of an external modulation signal and outputting the linear frequency modulation laser.
2. The chip scale frequency modulated laser device of claim 1, wherein the seed light source comprises any one of a distributed feedback semiconductor laser, a distributed bragg reflector semiconductor laser, an external cavity feedback semiconductor laser, a grating feedback semiconductor laser, a micro-ring feedback semiconductor laser, or a quantum dot laser.
3. A chip scale chirped laser device according to claim 1, wherein the coupling unit comprises at least one of an on-chip integrated waveguide, an on-chip integrated lens or an on-chip integrated grating.
4. The chip scale frequency modulated laser device according to claim 1, wherein the modulation unit comprises any one of a phase modulator, an intensity modulator, an electro-absorption modulator, a carrier-rejection double sideband modulator, or a micro-ring modulator;
the chip-scale frequency modulation laser device further comprises a filtering unit, wherein the filtering unit is used for enabling one sideband of the plurality of sidebands in the output spectrum of the modulation unit to be transmitted.
5. The chip-scale FM laser device according to claim 4, wherein said filter unit comprises any one of a single-order filter formed by a single micro-ring based on a waveguide, a high-order filter coupled by a plurality of micro-rings based on a waveguide, a single-stage Mach-Zehnder filter, a cascaded Mach-Zehnder filter, or a waveguide grating filter.
6. A chip scale frequency modulated laser device according to claim 1, wherein the modulation unit comprises a carrier-rejection single sideband modulator.
7. A chip scale frequency modulation laser device according to any one of claims 1 to 6, further comprising an optical amplifier at an output end of the modulation unit, wherein the optical amplifier is configured to amplify and output the chirped laser.
8. A chip scale frequency modulated laser device as claimed in claim 7, wherein the external modulation signal is a chirped microwave signal;
the chirp microwave signal is generated by a voltage controlled oscillator or a direct digital synthesizer.
9. A chip scale frequency modulated laser device according to claim 8, wherein the voltage controlled oscillator or the direct digital synthesizer is monolithically or hybrid integrated with the optical chip.
10. A chip scale frequency modulated laser device according to claim 7, further comprising a control circuit chip integrated with control circuits for the respective optical devices;
the control circuit chip is monolithically integrated or hybrid integrated with the optical chip.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN116742465A (en) * | 2023-08-14 | 2023-09-12 | 中国科学院长春光学精密机械与物理研究所 | Method and chip for generating linear frequency modulation laser |
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| CN109412700A (en) * | 2018-10-08 | 2019-03-01 | 上海交通大学 | Pulse-width modulation source device and operating method |
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| CN1371539A (en) * | 1999-08-31 | 2002-09-25 | 康宁股份有限公司 | Wavelength-locked external cavity lasers with integrated modulator |
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| CN108923250A (en) * | 2018-07-25 | 2018-11-30 | 中国科学院半导体研究所 | On piece integrates Fourier's mode-locked laser |
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Application publication date: 20210824 |