CN114978082A - Preparation method of resonator - Google Patents
Preparation method of resonator Download PDFInfo
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- CN114978082A CN114978082A CN202210539510.0A CN202210539510A CN114978082A CN 114978082 A CN114978082 A CN 114978082A CN 202210539510 A CN202210539510 A CN 202210539510A CN 114978082 A CN114978082 A CN 114978082A
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- 238000002360 preparation method Methods 0.000 title abstract description 13
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- 238000000034 method Methods 0.000 claims abstract description 40
- 238000004519 manufacturing process Methods 0.000 claims description 31
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
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- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 2
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- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/023—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the membrane type
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/028—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired values of other parameters
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- Engineering & Computer Science (AREA)
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- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
The invention discloses a preparation method of a resonator, which relates to the technical field of semiconductors and comprises the following steps: providing a first substrate, and forming a piezoelectric layer on the surface of the first substrate; sequentially forming a first electrode layer, a supporting layer and a first bonding layer on the surface of the piezoelectric layer; providing a second substrate, and forming a second bonding layer on the surface of the second substrate; bonding the second substrate with the support layer through the second bonding layer and the first bonding layer; removing the first substrate; a second electrode layer is formed on the piezoelectric layer. According to the preparation method of the resonator, the first electrode layer and the second electrode layer are respectively prepared on the upper surface and the lower surface of the piezoelectric layer through overturning and packaging bonding, so that the problems of unevenness and quality reduction of the piezoelectric layer caused by the preparation of the piezoelectric layer on the electrode layers are solved, and the resonator prepared by the method has a high quality factor.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a preparation method of a resonator.
Background
With the advent of the 5G era, the number of high-band filters required by radio frequency front ends has increased dramatically. Meanwhile, new requirements on the performance of the filter are also put forward, namely high frequency, multiple frequency bands, large bandwidth, low insertion loss and the like. This means that the performance requirements for the resonator are also becoming higher, and not only must have high resonant frequency, but also must have characteristics such as high quality factor, high electromechanical coupling coefficient.
Lamb Wave Resonators (LWR) which have been developed in recent years and use materials such as aluminum nitride and lithium niobate as piezoelectric thin films have been the current research focus because of their high frequency, high electromechanical coupling coefficient, and multi-band integration capability of monolithic wafers. In the key structure of the lamb wave resonator, the performance is best when the upper surface and the lower surface of the piezoelectric film are provided with the interdigital electrodes, however, the existing preparation process is that each layer of film is prepared in sequence, and the piezoelectric film is prepared after the interdigital electrodes on the lower surface of the piezoelectric film are prepared, and the piezoelectric film prepared by the method is uneven and poor in quality.
Disclosure of Invention
The invention aims to provide a preparation method of a resonator, which can solve the problems of unevenness and quality reduction of a piezoelectric film caused by the preparation of the piezoelectric film on an electrode.
The embodiment of the invention is realized by the following steps:
a method of making a resonator, comprising: providing a first substrate, and forming a piezoelectric layer on the surface of the first substrate; sequentially forming a first electrode layer, a supporting layer and a first bonding layer on the surface of the piezoelectric layer; providing a second substrate, and forming a second bonding layer on the surface of the second substrate; bonding the second substrate with the support layer through the second bonding layer and the first bonding layer; removing the first substrate; a second electrode layer is formed on the piezoelectric layer.
Optionally, as an implementable manner, sequentially forming the first electrode layer, the support layer, and the first bonding layer on the surface of the piezoelectric layer includes: forming a first electrode layer on a surface of the piezoelectric layer; patterning the first electrode layer to expose a surface edge of the piezoelectric layer; forming a sacrificial layer on the surface of the first electrode layer; patterning the sacrificial layer to expose a surface edge of the piezoelectric layer; sequentially forming a supporting layer and a first bonding layer on the sacrificial layer; after forming the second electrode layer on the piezoelectric layer, the method further comprises: the sacrificial layer is removed to expose a cavity between the first electrode layer and the support layer.
Optionally, as an implementable manner, removing the sacrificial layer to expose the cavity between the first electrode layer and the support layer includes: forming a release hole exposing the sacrificial layer on the piezoelectric layer; the sacrificial layer is removed through the release hole to expose a cavity between the first electrode layer and the support layer.
Optionally, as an implementable manner, before forming the first electrode layer on the surface of the piezoelectric layer, the method further includes: a reflective cavity is formed through the piezoelectric layer at a surface of the piezoelectric layer.
Optionally, as an implementable manner, sequentially forming the support layer and the first bonding layer on the sacrificial layer includes: forming a support layer on the sacrificial layer; grinding the surface of the supporting layer to be flat; and forming a first bonding layer on the surface of the flattened support layer.
Optionally, as an implementable manner, the first electrode layer and the second electrode layer are both interdigital electrode layers.
Optionally, as an implementable manner, forming a reflective cavity penetrating through the piezoelectric layer on the surface of the piezoelectric layer includes: two reflecting cavities penetrating through the piezoelectric layer are formed on the surface of the piezoelectric layer, wherein the reflecting cavities are linear, and the two reflecting cavities are oppositely arranged.
Optionally, as an implementable manner, the first electrode layer and the second electrode layer are both interdigital electrode layers, and the two reflective cavities are respectively disposed corresponding to the two busbars of the second electrode layer.
Optionally, as an implementable manner, after forming the second electrode layer on the piezoelectric layer, the method further includes: the second electrode layer is patterned to expose a surface edge of the piezoelectric layer.
Alternatively, as an implementable manner, the release holes include a plurality of release holes that penetrate through surfaces of the piezoelectric layer exposed by the first electrode layer and the second electrode layer, respectively.
The embodiment of the invention has the beneficial effects that:
the preparation method of the resonator provided by the invention comprises the following steps: providing a first substrate, and forming a piezoelectric layer on the surface of the first substrate; sequentially forming a first electrode layer, a supporting layer and a first bonding layer on the surface of the piezoelectric layer; providing a second substrate, and forming a second bonding layer on the surface of the second substrate; bonding the second substrate with the support layer through the second bonding layer and the first bonding layer; removing the first substrate; a second electrode layer is formed on the piezoelectric layer. According to the preparation method of the resonator, the first electrode layer and the second electrode layer are respectively prepared on the upper surface and the lower surface of the piezoelectric layer through overturning and packaging bonding, so that the problems of unevenness and quality reduction of the piezoelectric layer caused by the preparation of the piezoelectric layer on the electrode layers are solved, and the resonator prepared by the method has a high quality factor.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings needed to be used in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present invention and therefore should not be considered as limiting the scope, and for those skilled in the art, other related drawings can be obtained according to the drawings without inventive efforts.
Fig. 1 is a flowchart of a method for manufacturing a resonator according to an embodiment of the present invention;
fig. 2 is a schematic diagram of a process for manufacturing a resonator according to an embodiment of the present invention;
fig. 3 is a second schematic diagram illustrating a manufacturing process of a resonator according to an embodiment of the invention;
fig. 4 is a third schematic diagram illustrating a manufacturing process of a resonator according to an embodiment of the present invention;
fig. 5 is a fourth schematic diagram illustrating a manufacturing process of a resonator according to an embodiment of the invention;
fig. 6 is a fifth schematic view illustrating a manufacturing process of a resonator according to an embodiment of the invention;
FIG. 7 is a sixth schematic view of a resonator manufacturing process according to an embodiment of the present invention;
fig. 8 is a second flowchart of a method for manufacturing a resonator according to an embodiment of the invention;
fig. 9 is a seventh schematic diagram illustrating a manufacturing process of a resonator according to an embodiment of the present invention;
fig. 10 is an eighth schematic diagram illustrating a process for manufacturing a resonator according to an embodiment of the present invention;
fig. 11 is a ninth schematic diagram illustrating a process for manufacturing a resonator according to an embodiment of the present invention;
fig. 12 is a tenth schematic diagram illustrating a process for manufacturing a resonator according to an embodiment of the present invention;
fig. 13 is an eleventh schematic diagram illustrating a process for manufacturing a resonator according to an embodiment of the present invention;
fig. 14 is a twelfth schematic view illustrating a manufacturing process of a resonator according to an embodiment of the invention;
fig. 15 is a third flowchart of a method for manufacturing a resonator according to an embodiment of the present invention;
fig. 16 is a thirteen schematic diagrams of the preparation process of the resonator according to the embodiment of the present invention;
FIG. 17 is a fourth flowchart of a method for manufacturing a resonator according to an embodiment of the present invention;
FIG. 18 is a fourteenth schematic diagram illustrating a process for manufacturing a resonator according to an embodiment of the present invention;
fig. 19 is a fifth flowchart of a method for manufacturing a resonator according to an embodiment of the present invention;
fig. 20 is a fifteen-stage schematic diagram illustrating a process for manufacturing a resonator according to an embodiment of the present invention;
fig. 21 is a sixteenth schematic diagram illustrating a process for manufacturing a resonator according to an embodiment of the present invention;
fig. 22 is a sixth flowchart of a method for manufacturing a resonator according to an embodiment of the present invention;
fig. 23 is a seventeenth schematic diagram illustrating a process for manufacturing a resonator according to an embodiment of the present invention;
fig. 24 is a seventh flowchart of a method for manufacturing a resonator according to an embodiment of the present invention;
fig. 25 is an eighteenth schematic diagram of a process for manufacturing a resonator according to an embodiment of the present invention.
An icon: 110-a first substrate; 120-a piezoelectric layer; 121-a reflective cavity; 122-a release hole; 130-a first electrode layer; 140-a support layer; 150-a first bonding layer; 160-a second substrate; 170-a second bonding layer; 180-a second electrode layer; 181-bus bar; 182-interdigitation; 190-a sacrificial layer; 200-total bonding layer; 210-cavity.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are some embodiments of the present application, but not all embodiments. The components of the embodiments of the present application, generally described and illustrated in the figures herein, can be arranged and designed in a wide variety of different configurations.
It will be understood that, although the terms first, second, etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another. For example, a first element could be termed a second element, and, similarly, a second element could be termed a first element, without departing from the scope of the present disclosure. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.
It will be understood that when an element such as a layer, region or substrate is referred to as being "on" or "extending" onto "another element, it can be directly on or extend directly onto the other element or intervening elements may also be present. In contrast, when an element is referred to as being "directly on" or extending "directly onto" another element, there are no intervening elements present. Also, it will be understood that when an element such as a layer, region or substrate is referred to as being "on" or "extending over" another element, it can be directly on or extend directly over the other element or intervening elements may also be present. In contrast, when an element is referred to as being "directly on" or extending "directly over" another element, there are no intervening elements present. It will also be understood that when an element is referred to as being "connected" or "coupled" to another element, it can be directly connected or coupled to the other element or intervening elements may be present. In contrast, when an element is referred to as being "directly connected" or "directly coupled" to another element, there are no intervening elements present.
Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure belongs. It will be further understood that terms used herein should be interpreted as having a meaning that is consistent with their meaning in the context of this specification and the relevant art and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.
Referring to fig. 1, the present embodiment provides a method for manufacturing a resonator, which includes:
s100: a first substrate is provided, and a piezoelectric layer is formed on a surface of the first substrate.
S200: and sequentially forming a first electrode layer, a support layer and a first bonding layer on the surface of the piezoelectric layer.
S300: and providing a second substrate, and forming a second bonding layer on the surface of the second substrate.
S400: and bonding the second substrate with the support layer through the second bonding layer and the first bonding layer.
S500: the first substrate is removed.
S600: a second electrode layer is formed on the piezoelectric layer.
Referring to fig. 2, a piezoelectric layer 120 covering the first substrate 110 is formed on the surface of the first substrate 110, and the piezoelectric layer 120 realizes the mutual conversion of electrical energy and mechanical energy according to the inverse piezoelectric effect, and may be formed by physical vapor deposition, chemical vapor deposition, plasma-assisted molecular beam epitaxy, metal organic compound chemical vapor deposition, and the like.
Referring to fig. 3, a first electrode layer 130, a support layer 140 and a first bonding layer 150 are sequentially formed on the surface of the piezoelectric layer 120, wherein the first electrode layer 130 may be formed on the surface of the piezoelectric layer 120 by sputtering deposition, photolithography and other processes; the supporting layer 140 may be directly formed on the surface of the first electrode layer 130, or may be indirectly formed on the surface of the first electrode layer 130 through another film layer; the first bonding layer 150 may also be formed directly or indirectly on the surface of the supporting layer 140; the support layer 140 is used to support the stacked film layer structure to prevent the film layer structure from collapsing.
Referring to fig. 4 and 5, a second bonding layer 170 is formed on the surface of the second substrate 160 to cover the second substrate 160, and the second film structure formed in step S300 is flipped and bonded to the first film structure formed in steps S100 and S200 to form the total film structure shown in fig. 6. Preferably, the material of the second bonding layer 170 is the same as the material of the first bonding layer 150 to facilitate the formation of the overall bonding layer 200 after the connection therebetween.
Referring to fig. 7, after the total film structure is turned over, the first substrate 110 is removed, the piezoelectric layer 120 is exposed, and then the second electrode layer 180 is formed on the surface of the piezoelectric layer 120. Preferably, the material of the second electrode layer 180 is the same as the material of the first electrode layer 130.
In this embodiment, the material forming the first substrate 110 and the second substrate 160 may be silicon, sapphire, etc., the material forming the piezoelectric layer 120 may be lithium tantalate, aluminum nitride, lithium niobate, barium strontium titanate, etc., the material forming the first electrode layer 130 and the second electrode layer 180 may be aluminum, copper, etc., and the material forming the first bonding layer 150 and the second bonding layer 170 may be silicon dioxide, gold, etc.
In summary, in the method for manufacturing the resonator provided in this embodiment, the first electrode layer 130 and the second electrode layer 180 are respectively manufactured on the upper surface and the lower surface of the piezoelectric layer 120 by flipping and packaging bonding, so that the problems of unevenness and quality degradation of the piezoelectric layer 120 caused by manufacturing the piezoelectric layer 120 on the electrode layers are solved, and the resonator manufactured by the method has a high quality factor.
Referring to fig. 8, in an alternative implementation manner of the embodiment of the present invention, sequentially forming the first electrode layer 130, the support layer 140, and the first bonding layer 150 on the surface of the piezoelectric layer 120 includes:
s210: a first electrode layer is formed on a surface of the piezoelectric layer.
S220: the first electrode layer is patterned to expose a surface edge of the piezoelectric layer.
S230: and forming a sacrificial layer on the surface of the first electrode layer.
S240: the sacrificial layer is patterned to expose a surface edge of the piezoelectric layer.
S250: a support layer and a first bonding layer are sequentially formed on the sacrificial layer.
In this embodiment, the supporting layer 140 is formed on the first electrode layer 130 through the sacrificial layer 190. Specifically, referring to fig. 9, a first electrode layer 130 covering the piezoelectric layer 120 is formed on the surface of the piezoelectric layer 120, and then the first electrode layer 130 is patterned to expose the edge of the surface of the piezoelectric layer 120, so as to form the structure shown in fig. 10; with reference to fig. 11, a sacrificial layer 190 is formed on the first electrode layer 130, the sacrificial layer 190 covers the first electrode layer 130 and the piezoelectric layer 120 exposed by the first electrode layer 130 at the same time, and then the sacrificial layer 190 is patterned to expose the surface edge of the piezoelectric layer 120 again, so as to form the structure shown in fig. 12; referring to fig. 3, a supporting layer 140 is formed on the sacrificial layer 190, the supporting layer 140 covers the sacrificial layer 190 and the piezoelectric layer 120 exposed by the sacrificial layer 190, and then a first bonding layer 150 is formed on the supporting layer 140.
With reference to fig. 8, after forming the second electrode layer 180 on the piezoelectric layer 120, the method further includes:
s700: the sacrificial layer is removed to expose a cavity between the first electrode layer and the support layer.
Referring to fig. 13, after the sacrificial layer 190 is removed, the first electrode layer 130 and the supporting layer 140 are separated from each other, so as to form a cavity 210. The cavity 210 corresponds to the first electrode layer 130 and the second electrode layer 180 up and down, and is used for reflecting sound waves.
Referring to fig. 13 and 14, in an alternative implementation manner of the embodiment of the invention, the first electrode layer 130 and the second electrode layer 180 are both interdigital electrode layers.
Specifically, the second electrode layer 180 includes two oppositely disposed bus bars 181, a plurality of fingers 182 are disposed on each bus bar 181 at intervals, the fingers 182 connected to the same bus bar 181 have the same polarity, the fingers 182 connected to different bus bars 181 have opposite polarities, and a plurality of fingers 182 with different polarities are alternately disposed at intervals. The structure of the first electrode layer 130 is the same as that of the second electrode layer 180, the first electrode layer 130 corresponds to the second electrode layer 180 up and down, and the interdigital polarity 182 of the two second electrode layers 180 opposite up and down is opposite to that of the first electrode layer 130.
Referring to fig. 15, in an optional manner of the embodiment of the present invention, before forming the first electrode layer 130 on the surface of the piezoelectric layer 120, the method further includes:
s260: a reflective cavity is formed through the piezoelectric layer at a surface of the piezoelectric layer.
Referring to fig. 16, the reflective cavity 121 penetrates through the upper and lower surfaces of the piezoelectric layer 120 and exposes the first substrate 110, and accordingly, referring to fig. 9 and 11, when the first electrode layer 130 is formed, the first electrode layer 130 covers the piezoelectric layer 120, the sidewall of the reflective cavity 121, and the first substrate 110 exposed by the reflective cavity 121; when the sacrificial layer 190 is formed, the sacrificial layer 190 also fills the recess of the first electrode layer 130 due to the reflective cavity 121. Referring to fig. 13, after the sacrificial layer 190 is removed, the reflective cavity 121 is communicated with the cavity 210, and the reflective cavity 121 is disposed beside the effective region of the resonator, so that the lateral leakage of the acoustic wave energy in the resonator can be reduced, and the quality factor of the device can be improved.
Referring to fig. 17, alternatively, in an implementation manner of the embodiment of the present invention, forming a reflective cavity 121 penetrating through the piezoelectric layer 120 on a surface of the piezoelectric layer 120 includes:
s261: two reflecting cavities penetrating through the piezoelectric layer are formed on the surface of the piezoelectric layer, wherein the reflecting cavities are linear, and the two reflecting cavities are oppositely arranged.
Referring to fig. 18, the reflective cavities 121 are linear, two reflective cavities 121 are parallel to each other, and a portion between the two reflective cavities 121 is an effective area of the resonator.
Referring to fig. 14 and fig. 18, in an alternative implementation manner of the embodiment of the invention, the first electrode layer 130 and the second electrode layer 180 are both interdigital electrode layers, and the two reflective cavities 121 are respectively disposed corresponding to the two bus bars 181 of the second electrode layer 180.
In this embodiment, the first electrode layer 130 and the second electrode layer 180 are both interdigital electrode layers, and the structures of the first electrode layer 130 and the second electrode layer 180 have been described in the foregoing embodiments, and are not repeated herein. The two reflective cavities 121 are respectively located below the two busbars 181 of the second electrode layer 180, and it should be understood that since the first electrode layer 130 and the second electrode layer 180 are correspondingly disposed up and down, the two reflective cavities 121 are also respectively located above the two busbars of the first electrode layer 130.
Referring to fig. 19, in an alternative implementation manner of the embodiment of the present invention, sequentially forming the supporting layer 140 and the first bonding layer 150 on the sacrificial layer 190 includes:
s251: a support layer is formed on the sacrificial layer.
S252: and (5) grinding the surface of the support layer to be flat.
S253: and forming a first bonding layer on the surface of the flattened support layer.
Referring to fig. 20 and 21, a supporting layer 140 is formed on the patterned sacrificial layer 190, and the supporting layer 140 covers the sacrificial layer 190 and the piezoelectric layer 120 exposed by the sacrificial layer 190 at the same time, so that the upper surface of the supporting layer 140 is uneven, and the upper surface of the supporting layer 140 is polished, referring to fig. 3, the first bonding layer 150 is formed on the polished supporting layer 140, so that the thickness of the first bonding layer 150 can be ensured to be uniform, and the first bonding layer 150 and the second bonding layer 170 can be smoothly connected to form the total bonding layer 200.
Referring to fig. 22, in an alternative implementation manner of the embodiment of the invention, the removing the sacrificial layer 190 to expose the cavity 210 between the first electrode layer 130 and the support layer 140 includes:
s710: release holes exposing the sacrificial layer are formed on the piezoelectric layer.
S720: the sacrificial layer is removed through the release hole to expose a cavity between the first electrode layer and the support layer.
Referring to fig. 23, release holes 122 are formed on the piezoelectric layer 120 and penetrate through the upper and lower surfaces of the piezoelectric layer 120, and the release holes 122 are used to expose the sacrificial layer 190 and communicate with the outside. The release holes 122 may extend to the inside of the sacrificial layer 190. Referring to fig. 13, the cavity 210 can be exposed by removing the sacrificial layer 190 through the release hole 122. Illustratively, the sacrificial layer 190 is dissolved by pouring an etchant into the release holes 122 by chemical etching, and the liquid or gas generated when the sacrificial layer 190 is dissolved is discharged through the release holes 122.
Referring to fig. 13 and fig. 14, in an alternative implementation manner of the embodiment of the present invention, the plurality of release holes 122 are formed through the piezoelectric layer 120 and exposed by the first electrode layer 130 and the second electrode layer 180, respectively.
In order to avoid the function of the first electrode layer 130 and the second electrode layer 180 by forming the release hole 122, the release hole 122 is located at a position where the piezoelectric layer 120 does not cover the first electrode layer 130 and the second electrode layer 180. The release hole 122 includes a plurality of holes to improve the removal efficiency and removal effect of the sacrificial layer 190.
Referring to fig. 24, in an alternative implementation manner of the embodiment of the present invention, after forming the second electrode layer 180 on the piezoelectric layer 120, the method further includes:
s800: the second electrode layer is patterned to expose a surface edge of the piezoelectric layer.
Referring to fig. 25, the second electrode layer 180 is patterned to expose the surface edge of the piezoelectric layer 120, so that when a plurality of resonators are arranged side by side, two adjacent resonators can be separated.
The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (10)
1. A method of making a resonator, comprising:
providing a first substrate, and forming a piezoelectric layer on the surface of the first substrate;
sequentially forming a first electrode layer, a supporting layer and a first bonding layer on the surface of the piezoelectric layer;
providing a second substrate, and forming a second bonding layer on the surface of the second substrate;
bonding the second substrate to the support layer through the second bonding layer and the first bonding layer;
removing the first substrate;
a second electrode layer is formed on the piezoelectric layer.
2. The method of claim 1, wherein the sequentially forming a first electrode layer, a support layer, and a first bonding layer on the surface of the piezoelectric layer comprises:
forming a first electrode layer on the surface of the piezoelectric layer;
patterning the first electrode layer to expose surface edges of the piezoelectric layer;
forming a sacrificial layer on the surface of the first electrode layer;
patterning the sacrificial layer to expose surface edges of the piezoelectric layer;
sequentially forming a supporting layer and a first bonding layer on the sacrificial layer;
after the forming of the second electrode layer on the piezoelectric layer, the method further comprises:
removing the sacrificial layer to expose a cavity between the first electrode layer and the support layer.
3. The method of claim 2, wherein the removing the sacrificial layer to expose the cavity between the first electrode layer and the support layer comprises:
forming a release hole exposing the sacrificial layer on the piezoelectric layer;
removing the sacrificial layer through the release hole to expose a cavity between the first electrode layer and the support layer.
4. The method of manufacturing a resonator according to claim 2, wherein before the forming of the first electrode layer on the surface of the piezoelectric layer, the method further comprises:
a reflective cavity is formed through the piezoelectric layer at a surface of the piezoelectric layer.
5. The method of claim 2, wherein the sequentially forming a support layer and a first bonding layer on the sacrificial layer comprises:
forming a support layer on the sacrificial layer;
grinding the surface of the supporting layer to be flat;
and forming a first bonding layer on the surface of the support layer after the grinding.
6. The method of claim 1 or 2, wherein the first electrode layer and the second electrode layer are interdigital electrode layers.
7. The method of claim 4, wherein forming a reflective cavity through the piezoelectric layer on the surface of the piezoelectric layer comprises:
and two reflecting cavities penetrating through the piezoelectric layer are formed on the surface of the piezoelectric layer, wherein the reflecting cavities are linear, and the two reflecting cavities are oppositely arranged.
8. The method of claim 7, wherein the first electrode layer and the second electrode layer are both interdigital electrode layers, and two of the reflective cavities are respectively disposed corresponding to two busbars of the second electrode layer.
9. The method of manufacturing a resonator according to claim 1, wherein after the forming of the second electrode layer on the piezoelectric layer, the method further comprises:
the second electrode layer is patterned to expose surface edges of the piezoelectric layer.
10. The method of claim 3, wherein the plurality of release holes are formed through the surface of the piezoelectric layer exposed by the first electrode layer and the second electrode layer.
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