CN114976860A - Frequency stabilizing device and method of semiconductor laser based on acetylene gas absorption - Google Patents
Frequency stabilizing device and method of semiconductor laser based on acetylene gas absorption Download PDFInfo
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- CN114976860A CN114976860A CN202210608370.8A CN202210608370A CN114976860A CN 114976860 A CN114976860 A CN 114976860A CN 202210608370 A CN202210608370 A CN 202210608370A CN 114976860 A CN114976860 A CN 114976860A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 75
- 238000010521 absorption reaction Methods 0.000 title claims abstract description 40
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 title claims abstract description 36
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 title claims abstract description 36
- 238000000034 method Methods 0.000 title claims abstract description 16
- 230000000087 stabilizing effect Effects 0.000 title description 6
- 230000003287 optical effect Effects 0.000 claims abstract description 41
- 230000006641 stabilisation Effects 0.000 claims abstract description 30
- 238000011105 stabilization Methods 0.000 claims abstract description 30
- 238000001514 detection method Methods 0.000 claims abstract description 14
- 238000006243 chemical reaction Methods 0.000 claims description 10
- 230000008859 change Effects 0.000 claims description 9
- 230000008569 process Effects 0.000 claims description 4
- 238000002360 preparation method Methods 0.000 claims 1
- 230000008901 benefit Effects 0.000 abstract description 4
- 238000005516 engineering process Methods 0.000 description 6
- 238000004891 communication Methods 0.000 description 5
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 239000013307 optical fiber Substances 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/068—Stabilisation of laser output parameters
- H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
- H01S5/0687—Stabilising the frequency of the laser
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
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Abstract
The invention discloses a frequency stabilization method of a semiconductor laser based on acetylene gas absorption, which mainly comprises the following steps: the laser is emitted by a semiconductor laser with controllable temperature and driving current, the laser frequency output by the laser is modulated by an electro-optic modulator, an acetylene gas absorption chamber is used as an external stable reference frequency, when the laser frequency deviates from the specific standard frequency due to external influence, the deviated frequency can be identified, an optical signal after being modulated and absorbed is converted into an electric pulse signal by a photoelectric detector and a hysteresis comparator, the pulse time interval is calculated by an FPGA, and the current control module is subjected to feedback control by an analog-to-digital converter, so that the frequency stability of the laser is realized; the semiconductor laser has small volume and light weight, and the digital detection method utilizing the FPGA has the advantages of accurate detection, high feedback control speed, high stability and the like, so that the output frequency of the semiconductor laser can be stabilized in a more accurate range.
Description
Technical Field
The invention relates to a photoelectric technology, in particular to a frequency stabilization system of a semiconductor laser based on acetylene gas absorption.
Background
Nowadays 70% of the traffic is transmitted via optical fiber, and a great deal of scientific and technological efforts show that in the future ultra-high-speed and ultra-large-capacity data transmission and data communication technology, optical fiber communication is undoubtedly one of the most effective means. At present, Dense Wavelength Division Multiplexing (DWDM) technology has become a mainstream technology for expanding the capacity of optical fiber communication systems, and the communication capacity thereof is continuously expanding. A1.5 mu m waveband high-precision frequency stabilized laser becomes one of key technologies in the technical field of current optical communication.
The stability and reproducibility of output laser wavelength (or frequency) of semiconductor Lasers (LDs) on the market today are not ideal, they will change with the changes of semiconductor laser operating temperature and injection current, and many important applications require the output wavelength of the semiconductor laser to be stable, and to obtain higher frequency stability, a laser frequency stabilization technology needs to be adopted, and a design of a frequency stabilization device of the semiconductor laser based on FPGA and gas absorption is proposed.
Disclosure of Invention
In view of the above prior art, the present invention provides a frequency stabilization apparatus and method for a semiconductor laser based on acetylene gas absorption by using an FPGA, wherein a core laser in the apparatus is a semiconductor laser, which has a small volume and a light weight and can be used in a large scale, and meanwhile, a digital detection method using an FPGA has the advantages of accurate detection, fast feedback control speed, high stability, and the like, so that the output frequency of the semiconductor laser can be stabilized in a more accurate range.
In order to solve the technical problem, the frequency stabilization device of the semiconductor laser based on acetylene gas absorption comprises a laser driving unit, an output laser modulation unit, a detection conversion unit and a feedback control unit; the laser driving unit comprises a temperature control module, a current control module, a semiconductor laser and an optical isolator; the output laser modulation unit comprises an optical coupler, a signal generator, an electro-optic modulator and an acetylene gas absorption chamber; the detection conversion unit comprises a photoelectric detector and a hysteresis comparator; the feedback control unit comprises an FPGA and a digital-to-analog converter; the temperature control module and the current control module are respectively connected with a control interface of the semiconductor laser, an optical output port of the semiconductor laser is connected with an inlet of the optical isolator, an outlet of the optical isolator is connected with an inlet of the optical coupler, 1 output port of the optical coupler is used as normal output after laser frequency stabilization, another output port of the optical coupler is connected with an inlet of the electro-optical modulator, a modulation signal generated by the signal generator is connected with a microwave modulation interface of the electro-optical modulator, an output port of the electro-optical modulator is connected with an inlet of the acetylene gas absorption chamber, an outlet of the acetylene gas absorption chamber is connected with an inlet of the photoelectric detector, an outlet of the photoelectric detector is connected with an inlet of the hysteresis comparator, and an output of the hysteresis comparator is connected to the FPGA, the digital signal output by the FPGA is connected with the inlet of the digital-to-analog converter, and the output port of the digital-to-analog converter is connected with the current control module of the laser driving unit, so that closed-loop feedback control is realized to stabilize the output light frequency of the semiconductor laser.
Meanwhile, the invention also provides a method for realizing frequency stabilization by using the semiconductor laser frequency stabilization device, which comprises the following steps:
the method comprises the following steps: the temperature of the semiconductor laser is controlled through the temperature control module, the current control module controls the driving current of the semiconductor laser, the semiconductor laser generates a relatively stable laser beam with the wavelength of lambda and the frequency of f, and the laser beam passes through the optical isolator and then is transmitted to the output laser modulation unit, so that the influence of reflected light on the output of the semiconductor laser is avoided;
step two: the optical coupler divides the laser output by the semiconductor laser into two paths, one path of the laser is used as normal output after the laser frequency stabilization, the other path of the laser is used as reference light and enters the electro-optic modulator to modulate the laser output by the semiconductor laser, the signal generator is used for enabling the electro-optic modulator to generate a required modulation signal, the central frequency of the acetylene gas absorption chamber is used as stable external reference standard frequency, and when the laser frequency deviates from the reference standard frequency due to external influence, the acetylene gas absorption chamber identifies the deviated frequency;
step three: the photoelectric detector converts the received optical signal into an electric signal, and the hysteresis comparator processes the electric signal into a digital pulse signal which accords with the FPGA pin level specification;
step four: the FPGA carries out time interval calculation on the obtained digital pulse signal to obtain a digital feedback signal, and the digital-to-analog converter converts the digital feedback signal obtained from the FPGA into an analog signal, so that the driving current of the semiconductor laser is controlled to change the output light frequency of the semiconductor laser and stabilize the output light frequency at an external reference standard frequency, namely the central frequency of the acetylene gas absorption chamber.
Compared with the prior art, the invention has the beneficial effects that:
the invention adopts devices which are common devices in the photoelectric field, the core laser is a semiconductor laser, the volume is small, the weight is light, and the digital detection method by utilizing the FPGA has the advantages of accurate detection, high feedback control speed, high stability and the like, so that the output frequency of the semiconductor laser can be stabilized in a more accurate range.
In the frequency stabilizing method, the FPGA is used for detecting, the FPGA and the high-speed digital-to-analog converter are combined, so that the feedback control rate is further improved, the output wavelength of the semiconductor laser is stabilized in a more accurate direction, the stabilizing precision of the output light wavelength is below 0.005pm after stabilization, namely the stabilizing precision of the output light frequency reaches 625kHz, and the frequency stability is superior to 1 multiplied by 10 -9 。
Drawings
FIG. 1 is a flow chart of a frequency stabilization method of the present invention;
FIG. 2 is a diagram of the connection structure of the related devices in the frequency stabilizer of the present invention;
FIG. 3 is a graph 1 of pulse duration versus modulation frequency;
fig. 4 is a plot 2 of pulse time interval versus modulation frequency.
Detailed Description
The invention will be further described with reference to the following figures and specific examples, which are not intended to limit the invention in any way.
As shown in fig. 2, the frequency stabilization device of the present invention is designed in such a way that if the temperature and the driving current of the semiconductor laser 103 are unstable, the output laser wavelength will change, for example: assuming that the wavelength of light output by the semiconductor laser 103 is 1530.4nm, and the frequency of the light is 196.027182436THz, when the temperature control module 101 generates fluctuation with a precision of ± 0.01 ℃, fluctuation of ± 125MHz is generated for the laser frequency, and when the current control module 102 generates fluctuation with a precision of ± 0.01mA, fluctuation of ± 25MHz is generated for the laser frequency. In the frequency stabilization method, the advantage that the FPGA401 can process high-speed signals is utilized, the clock frequency is 100MHz, pulses can be detected once every 10ns, and the change of the laser wavelength generated by the change of the working temperature and the injection current of the semiconductor laser 103 can be detected sufficiently. The combination of the FPGA401 and the high-speed digital-to-analog converter 402 is utilized to further improve the rate of feedback control, so that the output wavelength of the semiconductor laser 103 is stabilized in a more accurate direction, the stabilization precision of the output light wavelength after stabilization is below 0.005pm, namely the stabilization precision of the output light frequency reaches 625kHz, and the frequency stability is superior to 1 multiplied by 10 -9 。
As shown in fig. 2, the frequency stabilization device of a semiconductor laser based on acetylene gas absorption according to the present invention includes a laser driving unit 100, an output laser modulation unit 200, a detection conversion unit 300, and a feedback control unit 400. The laser driving unit 100 includes a temperature control module 101, a current control module 102, a semiconductor laser 103, and an optical isolator 104. The output laser modulation unit 200 includes an optical coupler 201, a signal generator 202, an electro-optical modulator (MZM)203, and an acetylene gas absorption chamber 204. The detection conversion unit 300 includes a Photodetector (PD)301 and a hysteresis comparator 302. The feedback control unit includes an FPGA401 and a digital-to-analog converter (DAC) 402. The connection relationship among the devices is as follows: the temperature control module 101 and the current control module 102 are respectively connected to a control interface of the semiconductor laser 103, an optical output port of the semiconductor laser 103 is connected to an inlet of the optical isolator 104, an outlet of the optical isolator 104 is connected to an inlet 1 of the optical coupler 201, 1 output port 2 of the optical coupler 201 is used as a normal output after laser frequency stabilization, another output port 3 of the optical coupler 201 is connected to an inlet of the electro-optical modulator 203, a modulation signal generated by the signal generator 202 is connected to a microwave modulation interface of the electro-optical modulator 203, an output port of the electro-optical modulator 203 is connected to an inlet of the acetylene gas absorption chamber 204, an outlet of the acetylene gas absorption chamber 204 is connected to an inlet of the photodetector 302, and an outlet of the photodetector 302 is connected to an inlet of the hysteretic comparator 302, the output of the hysteresis comparator 302 is connected to the FPGA401, the digital signal output by the FPGA401 is connected to the input of the digital-to-analog converter 402, and the output of the digital-to-analog converter 402 is connected to the current control module 102 of the laser driving unit 100, so as to realize closed-loop feedback control to stabilize the output light frequency of the semiconductor laser 103. The target stable frequency of the laser light output from the semiconductor laser 103 coincides with the center frequency of the acetylene gas absorption chamber 204.
As shown in fig. 1, the method for implementing frequency stabilization by using the frequency stabilization device shown in fig. 2 includes the following steps:
the temperature of the semiconductor laser 103 is controlled by the temperature control module 101, the current control module 102 controls the driving current of the semiconductor laser 103, the semiconductor laser 103 generates a relatively stable laser beam with a wavelength of λ and a frequency of f, and in order to avoid the influence of reflected light on the output of the semiconductor laser 103, the output laser beam firstly passes through an optical isolator 104 with an isolation of 60dB and then is transmitted to the output laser modulation unit 200.
The output laser beam firstly passes through the optical isolator 104 and then enters the port 1 of the 50:50 optical coupler 201; the optical coupler 201 divides the laser light output by the semiconductor laser 103 into two paths, 2 ports of the optical coupler 201 are used for normal output after frequency stabilization, 3 ports of the optical coupler 201 are used as reference light to enter the output laser modulation unit 200, the electro-optical modulator 203 in the output laser modulation unit 200 is used for modulating the laser light output by the semiconductor laser 103, and the signal generator 202 is used for generating a modulation signal which enables the electro-optical modulator 203 to generate the required modulation signal, namely the modulation signal with the frequency of F and the amplitude of Vpp, and sending the modulation signal to a modulation port of the electro-optical modulator 203. The output of the electro-optical modulator 203 is connected to an acetylene gas absorption chamber 204 for detecting the deviation between the currently output laser frequency and a given external reference frequency, the center frequency of the acetylene gas absorption chamber 204 is used as a stable external reference standard frequency, and when the laser frequency deviates from the reference standard frequency due to external influence, the acetylene gas absorption chamber 204 identifies the deviated frequency. The light absorbed after passing through the acetylene gas absorption chamber 204 directly enters the detection conversion unit 300.
The photodetector 301 of the detection conversion unit 300 converts the received optical signal into an electrical signal, the output signal of the photodetector is sent to the hysteresis comparator 302, and the hysteresis comparator 302 processes the obtained electrical signal into a digital pulse signal conforming to the pin level specification of the FPGA 401.
The FPGA401 calculates the time interval of the obtained digital pulse signal to obtain a digital feedback signal, that is, the deviation between the currently output laser frequency and the given external reference frequency is converted into the deviation between the pulse time interval which can be identified and processed by the FPGA401, and after the relationship between the pulse time interval and the modulation signal frequency is calculated by the FPGA401, a feedback control signal to the current control module of the semiconductor laser 103 is output, the feedback control signal is a digital signal, the digital-to-analog converter 402 converts the digital feedback signal obtained from the FPGA401 into an analog signal, controls the driving current of the laser in a closed loop manner to eliminate the deviation between the currently output laser frequency and the given external reference frequency, thereby controlling the driving current of the semiconductor laser 103 to change the output optical frequency of the semiconductor laser 103 and stabilize the output optical frequency at the external reference standard frequency, i.e. the laser wavelength is locked to the center frequency of the absorption line of acetylene gas absorption cell 204.
Theoretical output wavelength of the semiconductor laser 103 and acetylene gas absorption cell204, the modulated laser light will generate a frequency doubling signal with twice the frequency of the modulated signal after passing through the photodetector 301. Since the 3dB bandwidth of the absorption peak of the acetylene gas absorption chamber 204 at about 1530.4nm is 7pm, and the modulation signal with the frequency F is used, when the peak-to-peak value Vpp is large, the waveform absorbed by the acetylene gas absorption chamber 204 generates a sharp peak of power reduction at a specific position, the absorbed electric signal is sent to the hysteresis comparator 302 for converting the generated peak into a pulse signal, and the amplitude of the pulse is processed into a digital signal in accordance with the pin level specification of the FPGA 401. When the output light frequency of the laser is the same as the reference standard frequency, namely the central absorption frequency of the acetylene gas absorption chamber 204, the time interval delta T between adjacent pulses of the obtained pulse signal 1 Are all equal and the reciprocal of the time intervalThe relationship between the adjacent pulse time intervals and the modulation signal frequency F is twice the modulation signal frequency F, and is common knowledge in the art, and need not be described in detail in the present invention, as shown in fig. 3.
The pulse is detected by the FPGA401, the deviation between the current output laser frequency and the external reference frequency is judged by the time interval delta T of two adjacent pulses, when the time interval between two adjacent pulses is equal and the reciprocal of the time interval is the same as twice the frequency of the modulation signal, namelyAt this time, the output wavelength of the semiconductor laser 103 is considered to be stabilized at the reference standard frequency.
Since the output laser wavelength (or frequency) of the semiconductor laser 103 varies with the operating temperature and injection current of the semiconductor laser, the time intervals between two adjacent pulses do not coincide with each other, and Δ T is the time interval between two adjacent pulses in the pulse signal obtained by the hysteresis comparator 302 2 ≠ΔT 3 ,ΔT 2 +ΔT 3 =2ΔT 1 FIG. 4, therefore, the pulse time interval is detected and calculated by FPGA401, and outputAnd a feedback control signal is output to the laser current control module 102, and the digital-to-analog conversion circuit converts a digital signal output by the FPGA401 into an analog signal, so that the driving current of the semiconductor laser 103 is adjusted to change the output wavelength of the semiconductor laser 103. It is common knowledge in the art how to detect and calculate the pulse time interval, and the description in the present invention is omitted,
after the semiconductor laser 103 is powered on, a tiny pre-adjustment current is set through the FPGA401, after digital-to-analog conversion is performed through the digital-to-analog converter 402, the current control module 102 controls a laser current source to change the driving current of the laser, meanwhile, the time interval between the obtained pulses is detected, the deviation degree of the output wavelength of the laser at the moment is judged through the pre-adjustment, and the time interval between the adjacent pulses is adjusted towards the direction which tends to be equal, so that the purpose of stabilizing the output frequency of the semiconductor laser 103 at the reference frequency is achieved, and finally, the frequency stabilization of the semiconductor laser 103 is achieved.
While the present invention has been described with reference to the accompanying drawings, the present invention is not limited to the above-described embodiments, which are illustrative only and not restrictive, and various modifications which do not depart from the spirit of the present invention and which are intended to be covered by the claims of the present invention may be made by those skilled in the art.
Claims (3)
1. A frequency stabilization device of a semiconductor laser based on acetylene gas absorption comprises a laser driving unit, an output laser modulation unit, a detection conversion unit and a feedback control unit; it is characterized in that the preparation method is characterized in that,
the laser driving unit comprises a temperature control module, a current control module, a semiconductor laser and an optical isolator; the output laser modulation unit comprises an optical coupler, a signal generator, an electro-optic modulator and an acetylene gas absorption chamber; the detection conversion unit comprises a photoelectric detector and a hysteresis comparator; the feedback control unit comprises an FPGA and a digital-to-analog converter; the temperature control module and the current control module are respectively connected with a control interface of the semiconductor laser, an optical output port of the semiconductor laser is connected with an inlet of the optical isolator, an outlet of the optical isolator is connected with an inlet of the optical coupler, 1 output port of the optical coupler is used as normal output after laser frequency stabilization, another output port of the optical coupler is connected with an inlet of the electro-optical modulator, a modulation signal generated by the signal generator is connected with a microwave modulation interface of the electro-optical modulator, an output port of the electro-optical modulator is connected with an inlet of the acetylene gas absorption chamber, an outlet of the acetylene gas absorption chamber is connected with an inlet of the photoelectric detector, an outlet of the photoelectric detector is connected with an inlet of the hysteresis comparator, and an output of the hysteresis comparator is connected to the FPGA, the digital signal output by the FPGA is connected with the inlet of the digital-to-analog converter, and the output port of the digital-to-analog converter is connected with the current control module of the laser driving unit, so that closed-loop feedback control is realized to stabilize the output light frequency of the semiconductor laser.
2. The frequency stabilization device according to claim 1, wherein a target stabilization frequency of the output laser light of the semiconductor laser coincides with a center frequency of the acetylene gas absorption chamber.
3. A method for frequency stabilization of a semiconductor laser based on acetylene gas absorption, characterized by using the frequency stabilization device of a semiconductor laser according to claim 1, and comprising the steps of:
the method comprises the following steps: the temperature of the semiconductor laser is controlled through the temperature control module, the current control module controls the driving current of the semiconductor laser, the semiconductor laser generates a relatively stable laser beam with the wavelength of lambda and the frequency of f, and the laser beam passes through the optical isolator and then is transmitted to the output laser modulation unit, so that the influence of reflected light on the output of the semiconductor laser is avoided;
step two: the optical coupler divides laser output by the semiconductor laser into two paths, one path is used as normal output after laser frequency stabilization, the other path is used as reference light and enters the electro-optic modulator to modulate the laser output by the semiconductor laser, the signal generator is used for enabling the electro-optic modulator to generate a required modulation signal, the central frequency of the acetylene gas absorption chamber is used as stable external reference standard frequency, and when the laser frequency deviates from the reference standard frequency due to external influence, the acetylene gas absorption chamber identifies the deviated frequency;
step three: the photoelectric detector converts the received optical signal into an electric signal, and the hysteresis comparator processes the electric signal into a digital pulse signal which accords with the FPGA pin level specification;
step four: the FPGA carries out time interval calculation on the obtained digital pulse signal to obtain a digital feedback signal, and the digital-to-analog converter converts the digital feedback signal obtained from the FPGA into an analog signal, so that the driving current of the semiconductor laser is controlled to change the output light frequency of the semiconductor laser, and the output light frequency is stabilized at an external reference standard frequency, namely the center frequency of the acetylene gas absorption chamber.
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CN117410822A (en) * | 2023-11-06 | 2024-01-16 | 哈尔滨工业大学 | Method and system for stabilizing frequency of tuned light source based on characteristic curve reconstruction |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA2012262A1 (en) * | 1989-05-12 | 1990-11-12 | Shoichi Sudo | Method of stabilizing the frequency of semiconductor laser and apparatus therefor |
CN1341986A (en) * | 2001-10-19 | 2002-03-27 | 清华大学 | Frequency-stabilizing device of fiber-optical grating external cavity semiconductor laser and its frequency-stabilizing method |
US20210194215A1 (en) * | 2018-10-23 | 2021-06-24 | Gigaphoton Inc. | Laser system and electronic device manufacturing method |
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Publication number | Priority date | Publication date | Assignee | Title |
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CA2012262A1 (en) * | 1989-05-12 | 1990-11-12 | Shoichi Sudo | Method of stabilizing the frequency of semiconductor laser and apparatus therefor |
CN1341986A (en) * | 2001-10-19 | 2002-03-27 | 清华大学 | Frequency-stabilizing device of fiber-optical grating external cavity semiconductor laser and its frequency-stabilizing method |
US20210194215A1 (en) * | 2018-10-23 | 2021-06-24 | Gigaphoton Inc. | Laser system and electronic device manufacturing method |
Cited By (2)
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---|---|---|---|---|
CN117410822A (en) * | 2023-11-06 | 2024-01-16 | 哈尔滨工业大学 | Method and system for stabilizing frequency of tuned light source based on characteristic curve reconstruction |
CN117410822B (en) * | 2023-11-06 | 2024-04-16 | 哈尔滨工业大学 | Method and system for stabilizing frequency of tuned light source based on characteristic curve reconstruction |
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