CN114976565A - Annular-column micro-coaxial radio frequency transmission line and manufacturing method thereof - Google Patents
Annular-column micro-coaxial radio frequency transmission line and manufacturing method thereof Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P11/00—Apparatus or processes specially adapted for manufacturing waveguides or resonators, lines, or other devices of the waveguide type
- H01P11/001—Manufacturing waveguides or transmission lines of the waveguide type
- H01P11/005—Manufacturing coaxial lines
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P3/00—Waveguides; Transmission lines of the waveguide type
- H01P3/02—Waveguides; Transmission lines of the waveguide type with two longitudinal conductors
- H01P3/06—Coaxial lines
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D30/00—Reducing energy consumption in communication networks
- Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks
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Abstract
The invention relates to the technical field of integrated circuit packaging, and particularly discloses a method for manufacturing a ring-column micro-coaxial radio frequency transmission line, which comprises the following steps: providing a silicon wafer substrate; the method comprises the steps that a first wave lead layer, a micro coaxial layer and a second wave lead layer are sequentially manufactured on a silicon wafer substrate, wherein the micro coaxial layer comprises at least one micro coaxial structure, multiple layers of micro coaxial structures are communicated in the direction perpendicular to the first wave lead layer, each micro coaxial structure comprises a cylindrical signal wire and a ring-cylindrical ground wire surrounding the cylindrical signal wire, and openings are formed in the ring-cylindrical ground wires in the micro coaxial structures, which are adjacent to the first wave lead layer and the second wave lead layer. The invention also discloses a ring-column micro-coaxial radio frequency transmission line. The manufacturing method of the ring-column micro-coaxial radio frequency transmission line can reduce the insertion loss of radio frequency signal transmission.
Description
Technical Field
The invention relates to the technical field of integrated circuit packaging, in particular to a manufacturing method of a ring-column micro-coaxial radio-frequency transmission line and the ring-column micro-coaxial radio-frequency transmission line.
Background
The radio frequency technology has gradually developed towards high performance, high frequency and high integration, and is widely applied to the fields of mobile communication, radar, automotive electronics, artificial intelligence and the like. The millimeter wave frequency range is 30GHz to 300GHz, the millimeter wave frequency range has the advantages of rich frequency spectrum resources, strong directivity, high resolution, confidentiality, interference resistance and the like, and is the core frequency range of the future radio frequency technology, 77GHz is the working frequency of the automobile radar, and the millimeter wave frequency range has attracted wide attention aiming at the processing of the frequency transmission line. The high-frequency transmission line still mainly takes a 2D form, and mainly comprises two types of waveguide lines and microstrip lines, the waveguide lines cannot be applied to ultra-wideband radio frequency signal transmission, and the integration level is low; the coupling effect between the microstrip lines is strong, and high-frequency signals can limit the transmission efficiency and the power capacity. Therefore, it is necessary to develop an advanced method for manufacturing a 3D rf transmission line to improve the transmission frequency and the integration level.
With the increasing integration density, rf transmission lines must be coupled to 3D stacking, 2.5D interposer, bridge chip, etc. The micro-coaxial structure is a typical 3D radio frequency transmission line, represented by MEMS micro-coaxial technology and polytratata technology of Nuvostronics corporation, usa. At present, air is used as an insulating medium in many micro-coaxial structures, so that oxidation and corrosion of copper wires are easily caused, and the service life of devices is influenced. In addition, the micro-coaxial cable still mainly uses plane transverse transmission, and the development of longitudinal signal transmission lines is less focused. Generally, a simple round copper pillar structure is adopted for transmitting a longitudinal radio frequency signal, but it is difficult to ensure low insertion loss by using the round copper pillar as a ground wire, so how to reduce the insertion loss of a radio frequency transmission line becomes a technical problem to be solved by those skilled in the art.
Disclosure of Invention
The invention provides a manufacturing method of a ring-column micro-coaxial radio-frequency transmission line and the ring-column micro-coaxial radio-frequency transmission line, which solve the problem of large insertion loss of the radio-frequency transmission line in the related technology.
As a first aspect of the present invention, a method for manufacturing a ring-column micro-coaxial rf transmission line is provided, wherein the method includes:
providing a silicon wafer substrate;
the method comprises the steps that a first wave lead layer, a micro coaxial layer and a second wave lead layer are sequentially manufactured on a silicon wafer substrate, wherein the micro coaxial layer comprises at least one micro coaxial structure, multiple layers of micro coaxial structures are communicated in the direction perpendicular to the first wave lead layer, each micro coaxial structure comprises a cylindrical signal wire and a ring-cylindrical ground wire surrounding the cylindrical signal wire, and openings are formed in the ring-cylindrical ground wires in the micro coaxial structures, which are adjacent to the first wave lead layer and the second wave lead layer.
Further, a first wave guide line layer, a micro coaxial layer and a second wave guide line layer are sequentially manufactured on the silicon wafer substrate, and the method comprises the following steps:
manufacturing a first wave conductor layer on the silicon wafer substrate;
sequentially performing sputtering, photoetching, electroplating, resin film pressing and grinding processes on the first wave conductor layer to manufacture the micro coaxial layer;
and manufacturing a second wave conductor layer on the micro coaxial layer.
Further, the manufacturing of the first waveguide layer on the silicon wafer substrate includes:
and manufacturing a first wave conductor layer on the silicon wafer substrate through wafer-level sputtering, photoetching and electroplating.
Further, fabricating a second waveguide layer on the micro-coaxial layer, including:
and manufacturing a second wave conductor layer on the micro coaxial layer sequentially through the processes of sputtering, photoetching and electroplating.
Furthermore, the micro coaxial layer comprises 4 layers of micro coaxial structures sequentially arranged on the first waveguide layer, and openings are formed in the annular cylindrical ground wire of the first layer of micro coaxial structure adjacent to the first waveguide layer and the annular cylindrical ground wire of the fourth layer of micro coaxial structure adjacent to the second waveguide layer.
Further, the thickness of the first wave conductor layer and the thickness of the second wave conductor layer are both 5 μm, and the thickness of each micro-coaxial structure in the micro-coaxial layer is 50 μm.
Further, the silicon wafer substrate comprises a 12-inch silicon wafer.
As another aspect of the present invention, there is provided a ring-column micro-coaxial rf transmission line manufactured by the method for manufacturing a ring-column micro-coaxial rf transmission line described above, wherein the method includes:
the device comprises a silicon wafer substrate, a first wave conductor layer, a micro coaxial layer and a second wave conductor layer, wherein the first wave conductor layer, the micro coaxial layer and the second wave conductor layer are sequentially arranged on the silicon wafer substrate;
the micro coaxial layer comprises at least one micro coaxial structure layer, the multiple micro coaxial structures are communicated in the direction perpendicular to the first wave conductor layer, each micro coaxial structure layer comprises a cylindrical signal line and a ring-column-shaped ground wire arranged around the cylindrical signal line, and openings are formed in the ring-column-shaped ground wires in the micro coaxial structures adjacent to the first wave conductor layer and the second wave conductor layer.
Furthermore, the micro coaxial layer comprises 4 layers of micro coaxial structures sequentially arranged on the first waveguide layer, and openings are formed in the annular cylindrical ground wire of the first layer of micro coaxial structure adjacent to the first waveguide layer and the annular cylindrical ground wire of the fourth layer of micro coaxial structure adjacent to the second waveguide layer.
Further, the thickness of the first wave conductor layer and the thickness of the second wave conductor layer are both 5 μm, and the thickness of each micro-coaxial structure in the micro-coaxial layer is 50 μm.
According to the manufacturing method of the ring-column micro-coaxial radio frequency transmission line, multilayer stacking wiring is carried out in a wafer-level plastic packaging mode, micro-coaxial processing with resin base as a medium is achieved, the service life of a copper circuit is greatly prolonged, micro-coaxial can be communicated with an upper layer of waveguide line and a lower layer of waveguide line, the ground wire is of a ring-column structure, and insertion loss during longitudinal radio frequency signal transmission is greatly reduced. In addition, the processing efficiency can be greatly improved by adopting a wafer-level processing mode, and micro-coaxial lines of various models can be produced on one wafer in batch.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the principles of the invention and not to limit the invention. In the drawings:
fig. 1 is a flowchart of a method for manufacturing a ring-column micro-coaxial rf transmission line according to the present invention.
Fig. 2 is a flowchart of an embodiment of a method for manufacturing a ring-pillar micro-coaxial rf transmission line according to the present invention.
Fig. 3 is a schematic cross-sectional structure view of the ring-column micro-coaxial rf transmission line provided in the present invention.
FIG. 4 is a schematic structural diagram of a photolithography process for fabricating a first layer of waveguide lines according to the present invention.
Fig. 5 is a schematic structural diagram of an electroplating process for manufacturing a first layer of waveguide lines according to the present invention.
FIG. 6 is a schematic diagram of a photoresist stripping process for fabricating a first layer of waveguide lines according to the present invention.
Fig. 7 is a schematic structural diagram of a photolithography process for fabricating a first layer of micro-coaxial structure according to the present invention.
Fig. 8 is a schematic structural diagram of an electroplating process for manufacturing a first micro coaxial structure according to the present invention.
Fig. 9 is a schematic structural diagram of a photoresist stripping process for fabricating a first micro coaxial structure according to the present invention.
Fig. 10 is a schematic structural diagram of a film pressing process for manufacturing a first micro coaxial structure according to the present invention.
Fig. 11 is a schematic structural diagram of a polishing process for fabricating a first micro-coaxial structure according to the present invention.
Fig. 12 is a top view of a first layer waveguide structure provided by the present invention.
Fig. 13 is a top view of a first layer of an open-ended annular pillar micro-coaxial structure provided by the present invention.
Fig. 14 is a top view of a second layer and a third layer of a pillar-surrounding micro-coaxial structure provided by the invention.
Fig. 15 is a top view of a fourth externally open micro-coaxial structure provided by the present invention.
Fig. 16 is a top view of a second layer waveguide structure provided by the present invention.
Detailed Description
It should be noted that the embodiments and features of the embodiments may be combined with each other without conflict. The present invention will be described in detail below with reference to the embodiments with reference to the attached drawings.
In order to make those skilled in the art better understand the technical solutions of the embodiments of the present invention, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It should be noted that the terms "first," "second," and the like in the description and claims of the present invention and in the drawings described above are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used may be interchanged under appropriate circumstances in order to facilitate the description of the embodiments of the invention herein. Furthermore, the terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed, but may include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.
In this embodiment, a method for manufacturing a ring-column micro-coaxial rf transmission line is provided, and fig. 1 is a flowchart of a method for manufacturing a ring-column micro-coaxial rf transmission line according to an embodiment of the present invention, as shown in fig. 1, including:
s100, providing a silicon wafer substrate;
in an embodiment of the present invention, the silicon wafer substrate may be a 12-inch silicon wafer. It should be understood that the embodiments of the present invention are not limited with respect to the size of the silicon wafer, and may be selected as desired.
S200, a first wave conductor layer, a micro coaxial layer and a second wave conductor layer are sequentially manufactured on the silicon wafer substrate, wherein the micro coaxial layer comprises at least one micro coaxial structure, multiple layers of micro coaxial structures are communicated in the direction perpendicular to the first wave conductor layer, each micro coaxial structure comprises a cylindrical signal line and a ring-cylindrical ground wire surrounding the cylindrical signal line, and openings are formed in the ring-cylindrical ground wires in the micro coaxial structures adjacent to the first wave conductor layer and the second wave conductor layer.
Therefore, the method for manufacturing the ring-pillar micro-coaxial radio frequency transmission line provided by the embodiment of the invention performs multilayer stacking wiring in a wafer-level plastic packaging manner, realizes micro-coaxial processing with resin matrix as a medium, greatly prolongs the service life of a copper circuit, can communicate an upper layer of waveguide line and a lower layer of waveguide line through micro-coaxial, and greatly reduces the insertion loss when a radio frequency signal is longitudinally transmitted because the ground wire is of a ring-pillar structure. In addition, the processing efficiency can be greatly improved by adopting a wafer-level processing mode, and micro-coaxial lines of various models can be produced on one wafer in batch.
In the embodiment of the present invention, a first wave guide layer, a micro-coaxial layer and a second wave guide layer are sequentially formed on the silicon wafer substrate, and the method includes:
manufacturing a first wave conductor layer on the silicon wafer substrate;
sequentially performing sputtering, photoetching, electroplating, resin film pressing and grinding processes on the first wave conductor layer to manufacture the micro coaxial layer;
and manufacturing a second wave conductor layer on the micro coaxial layer.
Further specifically, the manufacturing of the first waveguide layer on the silicon wafer substrate includes:
and manufacturing a first wave conductor layer on the silicon wafer substrate through wafer-level sputtering, photoetching and electroplating.
Further specifically, the manufacturing of the second waveguide layer on the micro coaxial layer includes:
and manufacturing a second wave conductor layer on the micro coaxial layer sequentially through the processes of sputtering, photoetching and electroplating.
It should be noted that, in the embodiment of the present invention, the micro coaxial layer includes 4 micro coaxial structures sequentially disposed on the first waveguide layer, and the ring-shaped ground line of the first micro coaxial structure adjacent to the first waveguide layer and the ring-shaped ground line of the fourth micro coaxial structure adjacent to the second waveguide layer are both provided with openings.
The specific process of the method for manufacturing the ring-column micro-coaxial radio-frequency transmission line according to the embodiment of the present invention is described in detail below with reference to fig. 2, by taking the example that the micro-coaxial layer includes a 4-layer micro-coaxial structure.
Step S11, sputtering a barrier layer and a seed layer on the surface of a 12-inch silicon wafer with a resin protective film, spin-coating a negative photoresist, photoetching a first layer of waveguide line layer circuit pattern, electroplating copper to form a first layer of waveguide line, and washing the negative photoresist and the redundant barrier layer and seed layer;
step S12, spin-coating a negative photoresist sputtering barrier layer and a seed layer on the first layer of waveguide line, spin-coating the negative photoresist, photoetching an opening type micro-coaxial line pattern in the second layer, electroplating and filling copper to form a first layer of micro-coaxial structure, washing away the negative photoresist and redundant barrier layer and seed layer, pressing and covering the ABF resin film, and grinding to expose the upper surface of the first layer of micro-coaxial structure after curing;
step S13, repeating the procedures of sputtering, photoetching, electroplating, photoresist removing, film pressing and grinding in the step S12 to obtain a second layer micro coaxial structure, a third layer micro coaxial structure and a fourth layer external opening type micro coaxial structure;
and S14, repeating the sputtering, photoetching, electroplating and photoresist removing procedures in the step S11 to obtain a second wave conductor layer. Finally, the ring-column micro-coaxial radio frequency transmission line shown in fig. 3 is obtained.
Specifically, as shown in fig. 4, a barrier layer Ti and a seed layer Cu are sputtered on a 12-inch silicon wafer 1, a 10 μm-thick negative photoresist 8 is coated in a spin-coating manner, a first waveguide line pattern is formed by photolithography, and a top view of a copper line is shown in fig. 12, where the key parameters are: the distance between the signal line and the ground wire of the waveguide line is 28 mu m, the double micro coaxial pitch is 609 mu m, and the inner diameter of the ring column is 256 mu m.
As shown in FIG. 5, a copper wiring having a thickness of 5 μm was formed by electroplating to obtain the first waveguide layer 2.
As shown in fig. 6, the negative photoresist 8 and the excess barrier layer Ti and seed layer Cu are washed away using a wet process;
as shown in fig. 7, a barrier layer Ti and a seed layer Cu are sputtered on the entire wafer surface, a negative photoresist 8 is coated by spin coating, a first outer opening type micro-coaxial pattern is formed by photolithography, a top view of the copper circuit is shown in fig. 13, and the inner opening is used to prevent the signal line of the waveguide line from being short-circuited with the micro-coaxial ground line.
In the embodiment of the invention, the photoetching process is based on an automatic alignment photoetching system, and in order to prevent photoetching offset caused by fuzzy alignment marks after sputtering and gluing, an alignment program needs to be set before sputtering and gluing and is applied to photoetching alignment of a wafer after sputtering and gluing.
As shown in fig. 8, an inner-open micro-coaxial copper circuit with a thickness of 50 μm is formed by electroplating, so as to obtain the first micro-coaxial structure layer 3.
In the embodiment of the invention, when each layer of micro-coaxial structure is electroplated, the shortest electroplating time is ensured to meet the requirement that the cylindrical signal wire reaches 50 μm, and when each layer of micro-coaxial structure is ground, the part of the annular cylindrical ground wire which is higher than the cylindrical ground wire is ground together with the resin film to the same height as the cylindrical signal wire.
As shown in fig. 9, the negative photoresist and the excess barrier Ti and seed layer Cu are washed away using a wet process.
As shown in fig. 10, an ABF resin film 7 is integrally laminated and cured.
As shown in fig. 11, the resin is polished to expose the micro-axis.
The steps in fig. 7 to fig. 11 are repeated to prepare the second and third micro-coaxial copper structures 4 with a thickness of 50 μm and the externally-opened micro-coaxial copper structure 5 with a thickness of 50 μm for the fourth layer, respectively, and the top views of these copper lines are shown in fig. 14 and fig. 15.
The steps shown in fig. 4 to fig. 6 are repeated to prepare a copper waveguide wire with a second layer thickness of 5 μm, i.e., a second waveguide wire layer 6, and the top view thereof is shown in fig. 16.
It should be noted that the thickness of the micro-coaxial structure and the thickness of the waveguide structure are related to the precision of the manufacturing equipment, and are not limited herein.
It should be noted that, in the embodiment of the present invention, as shown in fig. 3, the structure of the ring-column micro-coaxial rf transmission line includes two groups of micro-coaxial lines, the rf signal is input from the second waveguide line layer, transmitted to the first waveguide line layer through the micro-coaxial layer, transmitted to the second waveguide line layer through the other micro-coaxial layer, and still output from the second waveguide line layer.
It should be further noted that, in the embodiment of the present invention, in order to prevent the micro-coaxial structure from short-circuiting with the signal line of the connected waveguide line, the size of the opening of the ring pillar is the same as that of the opening of the ground line of the waveguide line, and the centers of the circular columns need to be aligned between the stacks.
In the manufacturing process, the barrier layer or the seed layer formed by sputtering is titanium/copper, titanium/copper/nickel or other metal materials, and the thickness of the seed layer is adjusted according to the actual process. The seed layer not only forms a conductive path for subsequent electroplating, but also can increase the adhesiveness of electroplating solder.
In the embodiment of the present invention, the insulating medium may be a resin-based material including an ajinomoto ABF resin film, polyimide-based resin, or the like. In addition, any size can be formed through the photoresist, and the sizes of the waveguide line signal line width, the ground line opening width, the micro-coaxial cylinder diameter, the micro-coaxial ring cylinder inner diameter and the like are defined according to requirements.
In the embodiment of the invention, when the ring-column micro-coaxial radio-frequency transmission line manufactured by the manufacturing method is applied to the transmission of a 77GHz radio-frequency signal, the ring-column micro-coaxial radio-frequency transmission line comprises copper as a component, resin as an insulating material, 5 μm of waveguide line thickness of each layer, 80 μm of signal line width, 50 μm of micro-coaxial thickness of each layer, and the key parameters are as follows: the distance between the signal line and the ground wire of the waveguide line is 28 micrometers, the double micro coaxial pitch is 609 micrometers, and the inner diameter of the ring column is 256 micrometers. The material of the structure can be adjusted according to the process and application requirements, and the structure size needs to be correspondingly modified by matching with the electrical performance parameters of the material.
Therefore, according to the method for manufacturing the ring-post micro-coaxial radio-frequency transmission line provided by the embodiment of the invention, the manufactured ring-post micro-coaxial radio-frequency transmission line can be embedded into a resin-based packaging substrate, a round copper post is used as a signal line, a copper ring post is used as a ground line, the micro-coaxial direction is a vertical direction perpendicular to a plane wave conductor and is used for communicating wave conductors of an upper layer and a lower layer, and the whole structure is used for extremely-low insertion loss transmission of 77GHz radio-frequency signals of an automobile radar.
As another embodiment of the present invention, there is provided a ring-column micro-coaxial rf transmission line manufactured by the above method for manufacturing a ring-column micro-coaxial rf transmission line, wherein as shown in fig. 3, the method includes:
the device comprises a silicon wafer substrate 1, a first wave guide line layer 2, a micro coaxial layer and a second wave guide line layer 6, wherein the first wave guide line layer, the micro coaxial layer and the second wave guide line layer are sequentially arranged on the silicon wafer substrate 1;
the micro coaxial layer comprises at least one micro coaxial structure layer, the multiple micro coaxial structures are communicated in the direction perpendicular to the first wave conductor layer, each micro coaxial structure layer comprises a cylindrical signal line and a ring-column-shaped ground wire arranged around the cylindrical signal line, and openings are formed in the ring-column-shaped ground wires in the micro coaxial structures adjacent to the first wave conductor layer and the second wave conductor layer.
In the embodiment of the present invention, the micro coaxial layer includes 4 micro coaxial structures sequentially disposed on the first waveguide layer 2, and the ring-shaped ground line of the first micro coaxial structure adjacent to the first waveguide layer and the ring-shaped ground line of the fourth micro coaxial structure adjacent to the second waveguide layer are both provided with openings.
Specifically, as shown in fig. 3, the 4-layer micro-coaxial structure includes a first layer of micro-coaxial structure 3 adjacent to the first layer of wave conductor layer 2, a second layer of micro-coaxial structure 4, a third layer of micro-coaxial structure 4, and a fourth layer of micro-coaxial structure 5 adjacent to a second layer of wave conductor layer 6.
Specifically, the thickness of each of the first waveguide layer 2 and the second waveguide layer 6 is 5 μm, and the thickness of each of the micro-coaxial structures in the micro-coaxial layer is 50 μm.
According to the ring-column micro-coaxial radio-frequency transmission line provided by the embodiment of the invention, the upper layer waveguide line and the lower layer waveguide line are connected through the micro-coaxial line, so that the longitudinal transmission of radio-frequency signals can be realized, and the insertion loss during the longitudinal transmission of the radio-frequency signals can be reduced due to the fact that the ground wire in the micro-coaxial structure adopts the ring-column structure.
For the specific working principle of the ring-column micro-coaxial radio frequency transmission line, reference may be made to the description of the manufacturing method of the ring-column micro-coaxial radio frequency transmission line, and details are not described herein again.
It will be understood that the above embodiments are merely exemplary embodiments taken to illustrate the principles of the present invention, which is not limited thereto. It will be apparent to those skilled in the art that various modifications and improvements can be made without departing from the spirit and substance of the invention, and these modifications and improvements are also considered to be within the scope of the invention.
Claims (10)
1. A method for manufacturing a ring-column micro-coaxial radio frequency transmission line is characterized by comprising the following steps:
providing a silicon wafer substrate;
the method comprises the steps that a first wave lead layer, a micro coaxial layer and a second wave lead layer are sequentially manufactured on a silicon wafer substrate, wherein the micro coaxial layer comprises at least one micro coaxial structure, multiple layers of micro coaxial structures are communicated in the direction perpendicular to the first wave lead layer, each micro coaxial structure comprises a cylindrical signal wire and a ring-cylindrical ground wire surrounding the cylindrical signal wire, and openings are formed in the ring-cylindrical ground wires in the micro coaxial structures, which are adjacent to the first wave lead layer and the second wave lead layer.
2. The method of claim 1, wherein the steps of sequentially forming a first waveguide layer, a micro-coaxial layer and a second waveguide layer on the silicon wafer substrate comprise:
manufacturing a first wave conductor layer on the silicon wafer substrate;
sequentially performing sputtering, photoetching, electroplating, resin film pressing and grinding processes on the first wave conductor layer to manufacture the micro coaxial layer;
and manufacturing a second wave conductor layer on the micro coaxial layer.
3. The method of claim 2, wherein fabricating a first waveguide layer on the silicon wafer substrate comprises:
and manufacturing a first wave conductor layer on the silicon wafer substrate through wafer-level sputtering, photoetching and electroplating.
4. The method of claim 2, wherein forming a second waveguide layer on the micro-coaxial layer comprises:
and manufacturing a second wave conductor layer on the micro coaxial layer sequentially through the processes of sputtering, photoetching and electroplating.
5. The method according to any one of claims 1 to 4, wherein the micro-coaxial layer comprises 4 micro-coaxial structures sequentially disposed on the first waveguide layer, and the openings are disposed on the ring-shaped ground line of the first micro-coaxial structure adjacent to the first waveguide layer and the ring-shaped ground line of the fourth micro-coaxial structure adjacent to the second waveguide layer.
6. The method according to any one of claims 1 to 4, wherein the first waveguide layer and the second waveguide layer each have a thickness of 5 μm, and each of the micro-coaxial structures in the micro-coaxial layer has a thickness of 50 μm.
7. The method of manufacturing according to any one of claims 1 to 4, wherein the silicon wafer substrate comprises a 12-inch silicon wafer.
8. A ring-column micro-coaxial radio-frequency transmission line manufactured by the method for manufacturing a ring-column micro-coaxial radio-frequency transmission line according to any one of claims 1 to 7, comprising:
the device comprises a silicon wafer substrate, a first wave conductor layer, a micro coaxial layer and a second wave conductor layer, wherein the first wave conductor layer, the micro coaxial layer and the second wave conductor layer are sequentially arranged on the silicon wafer substrate;
the micro coaxial layer comprises at least one micro coaxial structure layer, the multiple micro coaxial structures are communicated in the direction perpendicular to the first wave conductor layer, each micro coaxial structure layer comprises a cylindrical signal line and a ring-column-shaped ground wire arranged around the cylindrical signal line, and openings are formed in the ring-column-shaped ground wires in the micro coaxial structures adjacent to the first wave conductor layer and the second wave conductor layer.
9. The ring-post micro-coaxial radio-frequency transmission line according to claim 8, wherein the micro-coaxial layer comprises 4 layers of micro-coaxial structures sequentially disposed on the first waveguide layer, and the ring-post ground of the first layer of micro-coaxial structures adjacent to the first waveguide layer and the ring-post ground of the fourth layer of micro-coaxial structures adjacent to the second waveguide layer are both provided with openings.
10. The ring-column micro-coaxial radio-frequency transmission line according to claim 8, wherein the thickness of the first wave conductor layer and the thickness of the second wave conductor layer are both 5 μm, and the thickness of each micro-coaxial structure in the micro-coaxial layer is 50 μm.
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