CN114975755A - Infrared detector for non-dispersive infrared gas sensor - Google Patents
Infrared detector for non-dispersive infrared gas sensor Download PDFInfo
- Publication number
- CN114975755A CN114975755A CN202210593000.1A CN202210593000A CN114975755A CN 114975755 A CN114975755 A CN 114975755A CN 202210593000 A CN202210593000 A CN 202210593000A CN 114975755 A CN114975755 A CN 114975755A
- Authority
- CN
- China
- Prior art keywords
- thermopile
- thermocouple
- infrared
- substrate
- strip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims abstract description 33
- 238000010521 absorption reaction Methods 0.000 claims abstract description 27
- 239000000725 suspension Substances 0.000 claims abstract description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 15
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 9
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 238000001514 detection method Methods 0.000 abstract description 5
- 238000000034 method Methods 0.000 abstract description 4
- 230000008569 process Effects 0.000 abstract description 4
- 238000005530 etching Methods 0.000 abstract description 3
- 230000000694 effects Effects 0.000 description 5
- 230000005855 radiation Effects 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 239000002210 silicon-based material Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000003993 interaction Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 230000005678 Seebeck effect Effects 0.000 description 1
- 238000009529 body temperature measurement Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/12—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using thermoelectric elements, e.g. thermocouples
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
- G01N21/27—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands using photo-electric detection ; circuits for computing concentration
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
- G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
- G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
- G01N21/3504—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light for analysing gases, e.g. multi-gas analysis
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/82—Connection of interconnections
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N19/00—Integrated devices, or assemblies of multiple devices, comprising at least one thermoelectric or thermomagnetic element covered by groups H10N10/00 - H10N15/00
- H10N19/101—Multiple thermocouples connected in a cascade arrangement
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/12—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using thermoelectric elements, e.g. thermocouples
- G01J2005/126—Thermoelectric black plate and thermocouple
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- Health & Medical Sciences (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Abstract
The invention provides an infrared detector used in a non-spectroscopic infrared gas sensor. The infrared detector comprises a substrate and a thermopile arranged on the substrate, the thermopile is formed by connecting a plurality of pairs of thermocouples in series, the thermocouples are provided with cold ends and hot ends, the cold ends are attached to the substrate, the substrate at the bottom of the hot ends is etched from the back to form a suspension structure, and an insulating layer at the upper part of the hot ends is provided with a heat conduction through hole to be connected with an infrared absorption area at the top. The through hole structure on the upper part of the hot end can be directly connected with the hot end and the absorption area, and most of heat of the absorption area is transmitted to the hot end of the thermopile. The hot junction forms suspension structure, can reduce the hot junction to the heat conduction loss of basement, and cold junction lug connection basement realizes heat conduction for cold and hot end has great difference in temperature. The size, the connection structure, the arrangement mode and the like of the thermopile increase the output voltage of the detector. The requirement of infrared detection in the non-spectroscopic infrared gas sensor is finally met, and the through hole, the back etching and the thermopile structure are simple in structure and the process can be realized.
Description
Technical Field
The invention belongs to the field of thermopile infrared detector structures, and particularly relates to an infrared detector for a non-dispersive infrared gas sensor.
Background
The non-dispersive infrared (NDIR) technology is used for measuring the gas concentration, and the principle is as follows: according to Lambert-Beer's law, a beam of monochromatic light is absorbed by a certain absorption medium when passing through the medium, a part of light energy is absorbed by the medium, the transmitted light intensity is reduced accordingly, the absorbed proportion is related to the concentration value of the gas to be detected, the interaction length between infrared light and the gas to be detected from an infrared light source to a detector and the absorption coefficient.
The incident and emergent light intensity change relation:
I＝I 0 e -KCL
I 0 -the intensity of the incident light, the intensity of the infrared light before passing through the gas to be measured;
i-emergent light intensity, light intensity of infrared ray after passing through the gas to be detected;
c-concentration, concentration value of the gas to be measured;
l is the optical path length, and the length of interaction between the infrared light and the detected gas from the infrared light source to the detector;
k-absorption coefficient, which depends on the absorption line of the object to be measured.
Therefore, an infrared detector is required to be arranged inside the gas sensor, and the measurement of the light intensity is realized by measuring the infrared radiation intensity.
Infrared detectors are generally classified into two categories, photon detectors and thermal detectors, based on differences in detection mechanisms. The photon detector is based on the photoelectric effect, and the temperature of the photon detector is basically kept stable in the detection process; thermal detectors rely on absorption of infrared radiation to raise the temperature and then convert it into electrical energy. Infrared detectors are typically chosen for use because the thermal effects of infrared are significant and thermal detectors are superior to photon detectors in sensitivity. Conventional thermal detectors include thermal resistance detectors, pyroelectric detectors, and thermopile detectors. The thermal resistance detector measures related parameters by means of temperature change of the resistor, materials such as platinum and copper with the characteristics of large resistance temperature coefficient, large resistivity, small heat capacity, good linearity, stable performance and the like are generally selected to be used as the thermal resistor, the thermal resistor made of the materials is wide in temperature measurement range, simple in structure and poor in performance. The operation mechanism of the pyroelectric detector is that some crystals inside the detector generate equal-quantity different-sign charges when meeting high temperature, and the electric polarization phenomenon formed by the change of temperature is the pyroelectric effect. The operating principle of the thermopile infrared detector is that according to the Seebeck effect, the temperature difference between two ends of the semiconductor material is converted into a thermoelectric potential, and the output thermoelectric potential is related to the Seebeck coefficient alpha of the semiconductor material. The thermocouples are made of semiconductor materials and are connected in series to form a thermopile, so that voltage superposition can be realized.
Therefore, after the absorption layer of the thermopile infrared detector absorbs infrared radiation, the temperature of the hot end rises, and the temperature difference is generated between the hot end and the cold end, so that the temperature difference can be directly converted into voltage to be output. And finally, measuring the voltage and the change of the voltage to obtain the infrared radiation intensity.
Output voltage relation:
V out ＝ΔT(α A -α B )。
the thermopile infrared detector is widely used in the infrared detection field due to the characteristics of high measurement precision, wide range, sensitive response, high temperature resistance and the like.
Because silicon has good thermal conductivity, infrared radiation energy absorbed by the existing thermopile infrared detector can be greatly dissipated through a silicon substrate, so that thermal short circuit of the thermopile is caused, and meanwhile, because the structural layout design of the thermopile is unreasonable, the cold and hot break temperature difference of the prepared thermopile infrared detector is not obvious, so that the output voltage of the detector is too low, and the performance of the whole gas sensor is reduced or even cannot be used.
Disclosure of Invention
The invention aims to provide an infrared detector for a non-dispersive infrared gas sensor, and aims to solve the technical problems that the temperature difference of a cold end and a hot end of a thermopile infrared detector for the non-dispersive infrared gas sensor is not obvious, the output voltage of the infrared detector is too low, and the performance of the whole non-dispersive infrared gas sensor is influenced.
In order to solve the technical problems, the specific technical scheme of the invention is as follows:
an infrared detector used in a non-spectroscopic infrared gas sensor comprises a substrate, a thermopile arranged on the substrate, a supporting layer assembly and an absorption layer;
the thermopile comprises a cold end of the thermopile and a hot end of the thermopile, the cold end of the thermopile is attached to the substrate, a heat conduction through hole is formed in the hot end of the thermopile and is connected with the hot end and the absorption layer, and the back of the bottom of the hot end of the thermopile is etched to form a back cavity and form a suspension structure;
the thermopile includes a plurality of pairs of thermocouples;
the thermocouple comprises a first thermocouple strip and a second thermocouple strip, wherein the first thermocouple strip and the second thermocouple strip are sequentially arranged on the substrate;
the heat conduction through hole is arranged in the silicon oxide layer on the upper part of the second thermocouple strip;
the supporting layer assembly is arranged between the substrate and the thermopile;
the absorption layer is arranged on the upper part of the thermopile.
Further, the first thermocouple strip comprises a hot end of the first thermocouple strip and a cold end of the first thermocouple strip, and the second thermocouple strip comprises a hot end of the second thermocouple strip and a cold end of the second thermocouple strip; the hot end of the first thermocouple strip is connected with the hot end of the second thermocouple strip, and the cold end of the first thermocouple strip is connected with the cold end of the adjacent second thermocouple strip, so that the first thermocouple and the second thermocouple are connected in series, and the adjacent thermocouple strips are also connected in series.
Further, a first silicon oxide layer is filled between the first thermocouple strip and the second thermocouple strip and between adjacent thermocouples.
Further, the supporting layer assembly comprises a first silicon oxide layer, a silicon nitride layer and a second silicon oxide layer which are sequentially arranged.
Furthermore, the heat conducting through hole and the absorbing layer are made of silicon nitride.
Furthermore, the substrate is divided into four areas by diagonal division, a plurality of thermocouples which are connected in series and are parallel to each other are distributed in each area at 45 degrees, and the central area of the diagonal division is an absorption area.
Furthermore, the cold end of the thermopile and the hot end of the thermopile are respectively located at two opposite ends of the thermopile, the first thermocouple strip is made of an N-type doped silicon material, and the second thermocouple strip is made of a P-type doped silicon material.
The infrared detector for the non-dispersive infrared gas sensor has the following advantages:
1. the heat conduction through hole is formed in the hot end of the second thermocouple to realize connection with the absorption area in the center of the infrared detector, most of heat in the absorption area can be transmitted to the hot end of the thermopile, the cold end of the thermopile is directly connected with the substrate 1, the temperature of the cold end is kept consistent with the ambient temperature, the back of the bottom substrate of the hot end of the thermopile is etched to form a suspension structure, heat conduction from the hot end of the thermopile to the substrate is reduced, the cold end of the thermopile and the hot end of the thermopile have large temperature difference, output signals are increased, the heat conduction through hole and the back are simple in etching structure, the process can be realized, and good effects can be achieved;
2. the thermocouple strips in the thermopile are stacked and arranged in double layers, so that the space of a device can be saved, more groups of thermocouples can be arranged on the whole substrate as far as possible, and the size of the infrared detector is controlled, so that the thermopile is suitable for the interior of a non-dispersive infrared gas sensor. By designing the length, width and height, the connection structure, the arrangement mode and the like of the thermocouple 6, the structure of the thermopile is optimized, so that the cold end 21 of the thermopile and the hot end 22 of the thermopile have larger temperature difference, and the increase of output signals is realized.
Drawings
FIG. 1 is a schematic diagram of a thermopile infrared detector according to an embodiment of the present invention;
FIG. 2 is a schematic structural diagram of a longitudinal section (section one) of a single thermocouple of a thermopile infrared detector according to an embodiment of the present invention;
fig. 3 is a schematic structural diagram of a cross section (section two) of a junction between adjacent thermocouples of the thermopile infrared detector according to the embodiment of the present invention.
The notation in the figure is: 1. a substrate; 2. a thermopile; 21. a cold end of the thermopile; 22. the hot end of the thermopile; 3. supporting the membrane module; 31. a first silicon oxide layer; 32. a silicon nitride layer; 33. a second silicon dioxide layer; 4. an absorbing layer; 5. a back cavity; 6. a thermocouple; 61. a first thermocouple strip; 62. a second thermocouple strip; 7. a thermally conductive via; 8. an absorption zone; 9. and an electrode.
Detailed Description
For a better understanding of the objects, structure and function of the invention, an infrared detector for a non-dispersive infrared gas sensor according to the invention will be described in further detail with reference to the accompanying drawings.
Referring to fig. 1 to 3, an infrared detector according to the present invention will now be described. The infrared detector comprises a substrate 1, a thermopile 2 arranged on the substrate 1, a supporting layer assembly 3 and an absorption layer 4;
The thermopile 2 includes a plurality of pairs of thermocouples 6;
a plurality of pairs of thermocouples 6 are arranged in a double-layer stacking manner, wherein each thermocouple 6 comprises a first thermocouple strip 61 and a second thermocouple strip 62, the first thermocouple strip 61 and the second thermocouple strip are sequentially arranged on the substrate 1;
the heat conducting through holes 7 are arranged in the silicon oxide layer on the upper part of the second thermocouple strip 62;
the support layer assembly 3 is arranged between the substrate 1 and the thermopile 2;
the absorption layer 4 is arranged on the top layer of the infrared detector.
Compared with the prior art, the infrared detector provided by the invention is connected with the absorption region 8 in the center of the infrared detector by arranging the heat conduction through hole 7 on the hot end 22 of the second thermocouple 62, most of heat of the absorption region 8 can be transferred to the hot end 22 of the thermopile, the cold end 21 of the thermopile is directly connected with the substrate 1, the cold end is kept consistent with the ambient temperature, the back of the substrate 1 at the bottom of the hot end 22 of the thermopile is etched to form a suspension structure, the heat conduction from the hot end 22 of the thermopile to the substrate 1 is reduced, the cold end 21 of the thermopile and the hot end 22 of the thermopile have larger temperature difference, so that the increase of an output signal is realized, the heat conduction through hole 7 and the back etching structure are simple, the process can be realized, and good effects can be achieved. Meanwhile, the thermocouple strips in the thermopile 2 are stacked and arranged in a double-layer mode, so that the space of a device can be saved, and more groups of thermocouples can be arranged on the whole substrate 1 as far as possible. Through the length, width and height, the connecting structure, the arrangement mode and the like of the thermocouple 6, the thermopile structure is optimized, so that the output voltage of the thermoelectric 2 stack is increased, and the accuracy of the infrared detector in the NDIR gas sensor is met.
The substrate 1 is typically silicon. The cold end 22 of thermopile and hot end 21 of thermopile are located the relative both ends of thermopile 2 respectively, and first thermocouple strip 61 generally is N type doped silicon material, and second thermocouple strip 62 generally is P type doped silicon material, and absorbing layer 4 and through-hole 7 adopt the strong material silicon nitride of light absorption nature and thermal conductivity.
Referring to fig. 1 to 3, which are specific embodiments of the infrared detector provided by the present invention, the supporting layer assembly 3 includes a first silicon oxide layer 31, a silicon nitride layer 32, and a second silicon oxide layer 33, which are sequentially stacked, and can isolate the absorption layer 4 from the substrate 1, isolate the first thermocouple 62 from the second thermocouple 61 through the first silicon oxide layer 31 of the supporting layer assembly 3, isolate the adjacent thermocouples 6, and the supporting layer assembly 3 has good stability, and can prevent mutual corrosion between materials, thereby protecting the infrared detector.
As shown in fig. 1 to 3, as an embodiment of the infrared detector provided by the present invention, at the hot end 22 of the thermopile, the first thermocouple 62 and the second thermocouple 61 of a single thermocouple 6 are connected, and at the cold end 21, the first thermocouple strip 62 is connected with the adjacent second thermocouple strip 61, so that the first thermocouple 62 and the second thermocouple 61 are connected in series, and the adjacent thermocouple strips 6 are also connected in series, thereby integrally realizing series connection to form the thermopile.
As shown in fig. 1, as a specific embodiment of the infrared detector provided by the present invention, a substrate 1 is divided into four regions by diagonal division, and a plurality of thermocouples 6 connected in parallel and in series are arranged at 45 ° in each region, all the thermocouples 6 are arranged in central symmetry, the cold ends of the thermocouples are connected with a line, and the thermocouples 6 in the four regions are also connected with a line, and the line is connected to an electrode 9. The central region of thermopile 2 is absorption region 8, absorption region 8 being capable of absorbing heat and transferring it to hot end 22 of thermopile 2 via through hole 7.
As a specific embodiment of the infrared detector provided by the present invention, parameters such as the responsivity, internal resistance, size, etc. of the infrared detector are optimally adjusted as much as possible according to the requirement of the gas sensor for infrared detection.
It is to be understood that the present invention has been described with reference to certain embodiments, and that various changes in the features and embodiments, or equivalent substitutions may be made therein by those skilled in the art without departing from the spirit and scope of the invention. In addition, many modifications may be made to adapt a particular situation or material to the teachings of the invention without departing from the essential scope thereof. Therefore, it is intended that the invention not be limited to the particular embodiment disclosed, but that the invention will include all embodiments falling within the scope of the appended claims.
Claims (7)
1. An infrared detector used in a non-spectroscopic infrared gas sensor is characterized by comprising a substrate (1), a thermopile (2) arranged on the substrate (1), a supporting layer assembly (3) and an absorption layer (4);
the thermopile (2) comprises a cold end (21) of the thermopile and a hot end (22) of the thermopile, the cold end (21) of the thermopile is attached to the substrate (1), a heat conduction through hole (7) is formed in the hot end (22) of the thermopile, the heat conduction through hole (7) is connected with the hot end (22) and the absorption layer (4), and the back of the bottom of the hot end (22) of the thermopile is etched to form a back cavity (5) to form a suspension structure;
the thermopile (2) comprises a plurality of pairs of thermocouples (6);
the multiple pairs of thermocouples (6) are arranged in a double-layer stacking mode, and each thermocouple (6) comprises a first thermocouple strip (61) and a second thermocouple strip (62), wherein the first thermocouple strips (61) are sequentially arranged on the substrate (1), and the second thermocouple strips (62) are arranged on the first thermocouple strips (61);
the heat conduction through hole (7) is arranged in the silicon oxide layer on the upper part of the second thermocouple strip (62);
the support layer assembly (3) is arranged between the substrate (1) and the thermopile (2);
the absorption layer (4) is arranged on the upper part of the thermopile (2).
2. The infrared detector of claim 1, wherein said first thermocouple strip (61) comprises a hot end of the first thermocouple strip (61) and a cold end of the first thermocouple strip (61), and said second thermocouple strip (62) comprises a hot end of the second thermocouple strip (62) and a cold end of the second thermocouple strip (62); the hot end of the first thermocouple strip (61) is connected with the hot end of the second thermocouple strip (62), and the cold end of the first thermocouple strip (61) is connected with the cold end of the adjacent second thermocouple strip (62), so that the first thermocouple (62) and the second thermocouple (61) are connected in series, and the adjacent thermocouple strips (6) are also connected in series.
3. The infrared detector for use in a non-spectroscopic infrared gas sensor according to claim 2 wherein a first silicon oxide layer (31) is filled between the first thermocouple strip (61) and the second thermocouple strip (62), and between the adjacent thermocouples (6).
4. The infrared detector for use in a non-spectroscopic infrared gas sensor according to claim 1 wherein the support layer assembly (3) comprises a first silicon oxide layer (31), a silicon nitride layer (32) and a second silicon oxide layer (33) arranged in that order.
5. The infrared detector for use in a non-spectroscopic infrared gas sensor according to claim 1 wherein the material of the thermal via (7) and the absorbing layer (4) is silicon nitride.
6. The infrared detector for use in a non-spectroscopic infrared gas sensor as set forth in claim 1, wherein the substrate (1) is divided into four regions by diagonal division, and a plurality of thermocouples (6) connected in series in parallel to each other are arranged at 45 ° in each region, and the central region of the diagonal division is an absorption region (8).
7. An infrared detector as used in a non-spectroscopic infrared gas sensor in accordance with claim 1 wherein the cold end (22) of the thermopile and the hot end (21) of the thermopile are respectively located at opposite ends of the thermopile (2), the first thermocouple strip (61) being of N-doped silicon and the second thermocouple strip (62) being of P-doped silicon.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210593000.1A CN114975755A (en) | 2022-05-27 | 2022-05-27 | Infrared detector for non-dispersive infrared gas sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210593000.1A CN114975755A (en) | 2022-05-27 | 2022-05-27 | Infrared detector for non-dispersive infrared gas sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN114975755A true CN114975755A (en) | 2022-08-30 |
Family
ID=82957984
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210593000.1A Pending CN114975755A (en) | 2022-05-27 | 2022-05-27 | Infrared detector for non-dispersive infrared gas sensor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN114975755A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116963574A (en) * | 2023-09-18 | 2023-10-27 | 上海芯龙半导体技术股份有限公司 | Infrared thermopile sensor and manufacturing method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20130026366A1 (en) * | 2010-04-14 | 2013-01-31 | Excelitas Canada Inc. | Vertically stacked thermopile |
| US20150168221A1 (en) * | 2012-08-23 | 2015-06-18 | Jiangsu R&D Center For Internet Of Things | Black silicon-based high-performance mems thermopile ir detector and fabrication method |
| CN111412996A (en) * | 2020-04-15 | 2020-07-14 | 无锡物联网创新中心有限公司 | Thermopile infrared detector and heat conduction structure thereof |
-
2022
- 2022-05-27 CN CN202210593000.1A patent/CN114975755A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20130026366A1 (en) * | 2010-04-14 | 2013-01-31 | Excelitas Canada Inc. | Vertically stacked thermopile |
| US20150168221A1 (en) * | 2012-08-23 | 2015-06-18 | Jiangsu R&D Center For Internet Of Things | Black silicon-based high-performance mems thermopile ir detector and fabrication method |
| CN111412996A (en) * | 2020-04-15 | 2020-07-14 | 无锡物联网创新中心有限公司 | Thermopile infrared detector and heat conduction structure thereof |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116963574A (en) * | 2023-09-18 | 2023-10-27 | 上海芯龙半导体技术股份有限公司 | Infrared thermopile sensor and manufacturing method thereof |
| CN116963574B (en) * | 2023-09-18 | 2023-12-15 | 上海芯龙半导体技术股份有限公司 | Infrared thermopile sensor and manufacturing method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR101910575B1 (en) | Infrared detector and infrared image sensor | |
| AU2001278843B2 (en) | Microbolometer and method for forming | |
| KR0135119B1 (en) | Infrared detector | |
| Tissot et al. | LETI/LIR's amorphous silicon uncooled microbolometer development | |
| US11609122B1 (en) | Silicon nitride-carbon nanotube-graphene nanocomposite microbolometer IR detector | |
| CN104412082A (en) | IR thermopile detector | |
| AU2001278843A1 (en) | Microbolometer and method for forming | |
| JP2019518960A (en) | Thermopile infrared single sensor for temperature measurement or gas detection | |
| KR20190114028A (en) | Polarization selective, frequency selective, and wide dynamic range detectors, imaging arrays, readout integrated circuits, and sensor systems | |
| KR20010047680A (en) | IR sensor and method for fabricating the same | |
| JP4006727B2 (en) | Photodetector and manufacturing method thereof | |
| US9199838B2 (en) | Thermally shorted bolometer | |
| JP2013541704A (en) | Shared membrane thermocouple array array | |
| US20130206989A1 (en) | Radiation Sensor | |
| US6166381A (en) | Uncooled background limited detector and method | |
| CN111174908A (en) | Laser detector and corresponding laser power meter | |
| CN114975755A (en) | Infrared detector for non-dispersive infrared gas sensor | |
| Tissot et al. | LETI/LIR's uncooled microbolometer development | |
| US9658110B1 (en) | Thermal sensor combination | |
| KR101677717B1 (en) | The MEMS thermopile sensor and Method of fabricating the same | |
| JPH0436587B2 (en) | ||
| US20110226953A1 (en) | Solid-state imaging element | |
| CN113720472A (en) | Infrared detector based on CMOS (complementary Metal oxide semiconductor) process | |
| CN113720477A (en) | Infrared detector mirror image element based on CMOS (complementary metal oxide semiconductor) process and infrared detector | |
| Rajendra Kumar et al. | Determination of thermal parameters of vanadium oxide uncooled microbolometer infrared detector |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |