CN114975217A - Support piece for improving deformation of substrate - Google Patents
Support piece for improving deformation of substrate Download PDFInfo
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- CN114975217A CN114975217A CN202210446631.0A CN202210446631A CN114975217A CN 114975217 A CN114975217 A CN 114975217A CN 202210446631 A CN202210446631 A CN 202210446631A CN 114975217 A CN114975217 A CN 114975217A
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- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
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Abstract
本发明属于精密制造设备技术领域,具体涉及一种改善基板变形的支撑件,用于在精密刻蚀工艺时支撑所述基板,所述支撑件为环形支撑件,用于自所述基板的外围边缘部分支撑所述基板,与所述基板的接触部分设置有吸附部;所述吸附部用于消除所述基板放置在所述支撑件后产生的边缘翘曲。本发明对薄基板在重力作用造成的变形进行改善,通过在基板边缘施加吸附力或者压力来补偿基板有效区域由于重力造成的影响,防止在基板的边缘区域产生变形,保证其结构分辨率和均匀性,提高其加工效率。
The invention belongs to the technical field of precision manufacturing equipment, and in particular relates to a support member for improving the deformation of a substrate, which is used to support the substrate during a precision etching process. The edge part supports the substrate, and the contact part with the substrate is provided with a suction part; the suction part is used to eliminate the warpage of the edge generated after the substrate is placed on the support. The invention improves the deformation of the thin substrate caused by the action of gravity, and compensates the influence of the effective area of the substrate due to gravity by applying adsorption force or pressure on the edge of the substrate, prevents deformation in the edge area of the substrate, and ensures its structural resolution and uniformity. improve its processing efficiency.
Description
技术领域technical field
本发明属于精密制造设备技术领域,具体涉及一种改善基板变形的支撑件。The invention belongs to the technical field of precision manufacturing equipment, and in particular relates to a support member for improving the deformation of a substrate.
背景技术Background technique
在精密刻蚀过程中,晶圆或基板通常放在平坦的支撑台,且通过真空吸附将基板均匀的吸附在支撑台上。若基板的有源区域已设置有传感结构或还未经处理,则在真空吸附过程中,基板可能会被有源区域中的杂质颗粒损伤或污染。In the precision etching process, the wafer or substrate is usually placed on a flat support table, and the substrate is evenly adsorbed on the support table by vacuum adsorption. If the active area of the substrate has been provided with the sensing structure or has not been processed, the substrate may be damaged or contaminated by impurity particles in the active area during the vacuum adsorption process.
为了克服上述问题并避免基板的有源区域受到损伤或污染,当前已经提出尽在基板的无源区域(外围边缘)对其进行支撑。在这种情况下,由于基板仅在边缘较窄的区域有支撑,其有源区域此时都处于悬空状态,基板可能会在重力作用下根据其厚度、大小和刚度的不同向下弯曲不同的程度。在刻蚀时,基板的变形会使光掩模与基板之前在不同区域的距离不同,可能会导致过低的结构分辨性和非均匀性,导致良率降低。In order to overcome the above-mentioned problems and avoid damage or contamination of the active area of the substrate, it has currently been proposed to support the substrate at its inactive area (peripheral edge). In this case, since the substrate is only supported at the narrow edge area, and its active area is in a suspended state at this time, the substrate may bend downward under the influence of gravity depending on its thickness, size and stiffness. degree. During etching, the deformation of the substrate will make the distance between the photomask and the substrate in different areas before the difference, which may lead to too low structural resolution and non-uniformity, resulting in lower yield.
现有基板支撑方法多采用边缘区域支撑的方法,可避免基板在真空吸附时的损伤和污染,但是边缘支撑的方法会使基板中心在重力作用下变形,使光掩模与基板之间的距离变化,导致过低的结构分辨率和非均匀性,影响良率和效率。特别是对更薄的基板来说,这种变形更大。The existing substrate support methods mostly use the edge area support method, which can avoid the damage and pollution of the substrate during vacuum adsorption, but the edge support method will deform the center of the substrate under the action of gravity, so that the distance between the photomask and the substrate is reduced. variation, resulting in too low structural resolution and non-uniformity, affecting yield and efficiency. This deformation is greater especially for thinner substrates.
发明内容SUMMARY OF THE INVENTION
有鉴于此,本发明提出一种改善基板变形的支撑件,对薄基板在重力作用造成的变形进行改善,通过在基板边缘施加吸附力或者压力来补偿基板有效区域由于重力造成的影响,防止在基板的边缘区域产生变形,保证其结构分辨率和均匀性,提高加工效率。In view of this, the present invention proposes a support member for improving the deformation of the substrate, which improves the deformation of the thin substrate due to the action of gravity, and compensates the influence of the effective area of the substrate due to gravity by applying an adsorption force or pressure on the edge of the substrate, preventing the The edge area of the substrate is deformed, ensuring its structural resolution and uniformity, and improving the processing efficiency.
为了达到上述技术目的,本发明所采用的具体技术方案为:In order to achieve the above-mentioned technical purpose, the concrete technical scheme adopted in the present invention is:
一种改善基板变形的支撑件,用于在精密刻蚀工艺时支撑所述基板,所述支撑件为环形支撑件,用于自所述基板的外围边缘部分支撑所述基板,与所述基板的接触部分设置有吸附部;所述吸附部用于消除所述基板放置在所述支撑件后产生的边缘翘曲。A support member for improving deformation of a substrate, used for supporting the substrate during a precision etching process, the support member is an annular support member for supporting the substrate from a peripheral edge portion of the substrate, and the substrate is connected with the substrate. The contact part of the base plate is provided with a suction part; the suction part is used to eliminate the warpage of the edge generated after the substrate is placed on the support.
进一步的,所述吸附部为负压吸附槽。Further, the adsorption part is a negative pressure adsorption tank.
进一步的,自所述基板的重心点的扩散方向,所述负压吸附槽对所述基板的吸附力规律增加。Further, from the direction of diffusion of the center of gravity of the substrate, the adsorption force of the negative pressure adsorption groove on the substrate increases regularly.
进一步的,所述负压吸附槽为多组;所述吸附部基于负压装置和导气管在所述负压吸附槽处产生负压;所述负压装置用于产生气体负压,基于各所述导气管连接各所述负压吸附槽。Further, the negative pressure adsorption tank is in multiple groups; the adsorption part generates negative pressure at the negative pressure adsorption tank based on the negative pressure device and the air duct; the negative pressure device is used to generate gas negative pressure, based on each The air conduit is connected to each of the negative pressure adsorption tanks.
进一步的,自所述基板的重心点的扩散方向,所述负压吸附槽对所述基板的吸附力递增。Further, from the diffusion direction of the center of gravity of the substrate, the adsorption force of the negative pressure adsorption groove on the substrate increases.
进一步的,所述负压装置基于多个所述导气管分别连接各所述负压吸附槽。Further, the negative pressure device is respectively connected to each of the negative pressure adsorption tanks based on a plurality of the air conduits.
进一步的,各所述负压吸附槽呈环形分布在所述支撑件上。Further, each of the negative pressure adsorption grooves is annularly distributed on the support member.
进一步的,所述负压吸附槽的宽度为0.5-1.5mm。Further, the width of the negative pressure adsorption groove is 0.5-1.5 mm.
进一步的,各所述负压吸附槽的吸附力依据所述基板的面型可调设置。Further, the adsorption force of each of the negative pressure adsorption grooves can be adjusted according to the surface shape of the substrate.
进一步的,所述支撑件还包括多个紧固螺孔,各所述紧固螺孔用于将所述支撑件固定至光刻设备中。Further, the support member further includes a plurality of fastening screw holes, each of which is used to fix the support member into the lithography apparatus.
采用上述技术方案,本发明能够带来以下有益效果:Adopt above-mentioned technical scheme, the present invention can bring following beneficial effect:
1)本发明不引入额外的支撑,可避免基板不必要的损伤和污染;1) The present invention does not introduce additional support, which can avoid unnecessary damage and pollution of the substrate;
2)本发明工艺调整过程比较简单,可有效提高加工效率;2) The process adjustment process of the present invention is relatively simple, and the processing efficiency can be effectively improved;
3)本发明能够通过改变吸附的压强来补偿基板有效区域的变形,可有效提高加工良率。3) The present invention can compensate the deformation of the effective area of the substrate by changing the adsorption pressure, and can effectively improve the processing yield.
附图说明Description of drawings
为了更清楚地说明本发明实施例的技术方案,下面将对实施例中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图仅仅是本发明的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其它的附图。In order to illustrate the technical solutions of the embodiments of the present invention more clearly, the following briefly introduces the accompanying drawings used in the embodiments. Obviously, the drawings in the following description are only some embodiments of the present invention. For those of ordinary skill in the art, other drawings can also be obtained from these drawings without any creative effort.
图1为本发明具体实施方式中一种改善基板变形的支撑件支撑基板的状态结构示意图;FIG. 1 is a schematic view of the state structure of a support member for improving the deformation of the substrate supporting the substrate according to the specific embodiment of the present invention;
图2为本发明具体实施方式中一种改善基板变形的支撑件未支撑基板的状态结构示意图;2 is a schematic structural diagram of a state in which a support member for improving the deformation of the substrate does not support the substrate according to an embodiment of the present invention;
图3为本发明具体实施方式中负压吸附槽的局部放大结构图;3 is a partial enlarged structural diagram of a negative pressure adsorption tank in a specific embodiment of the present invention;
图4为本发明具体实施方式中各负压吸附槽对石英基板均采用1bar吸力与0吸力状态下基板的形变状态对比图;4 is a comparison diagram of the deformation state of the substrate when each negative pressure adsorption tank adopts a suction force of 1 bar and a suction force of 0 for the quartz substrate in the specific embodiment of the present invention;
图5为本发明具体实施方式中不同吸附力与石英基板的最大变形之间的关系;5 is the relationship between different adsorption forces and the maximum deformation of the quartz substrate in the specific embodiment of the present invention;
图6为本发明具体实施方式中各负压吸附槽与负压装置的连接示意图;6 is a schematic diagram of the connection between each negative pressure adsorption tank and a negative pressure device in a specific embodiment of the present invention;
其中:1、基板;2、支撑件;3、紧固螺孔;4、负压吸附槽;5、导气管;6、负压装置。Wherein: 1. base plate; 2. supporting member; 3. fastening screw hole; 4. negative pressure adsorption groove; 5. air duct; 6. negative pressure device.
具体实施方式Detailed ways
下面结合附图对本发明实施例进行详细描述。The embodiments of the present invention will be described in detail below with reference to the accompanying drawings.
以下通过特定的具体实例说明本发明的实施方式,本领域技术人员可由本说明书所揭露的内容轻易地了解本发明的其他优点与功效。显然,所描述的实施例仅仅是本发明一部分实施例,而不是全部的实施例。本发明还可以通过另外不同的具体实施方式加以实施或应用,本说明书中的各项细节也可以基于不同观点与应用,在没有背离本发明的精神下进行各种修饰或改变。需说明的是,在不冲突的情况下,以下实施例及实施例中的特征可以相互组合。基于本发明中的实施例,本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其他实施例,都属于本发明保护的范围。The embodiments of the present invention are described below through specific specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. Obviously, the described embodiments are only some, but not all, embodiments of the present invention. The present invention can also be implemented or applied through other different specific embodiments, and various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of the present invention. It should be noted that the following embodiments and features in the embodiments may be combined with each other under the condition of no conflict. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.
要说明的是,下文描述在所附权利要求书的范围内的实施例的各种方面。应显而易见,本文中所描述的方面可体现于广泛多种形式中,且本文中所描述的任何特定结构及/或功能仅为说明性的。基于本发明,所属领域的技术人员应了解,本文中所描述的一个方面可与任何其它方面独立地实施,且可以各种方式组合这些方面中的两者或两者以上。举例来说,可使用本文中所阐述的任何数目个方面来实施设备及/或实践方法。另外,可使用除了本文中所阐述的方面中的一或多者之外的其它结构及/或功能性实施此设备及/或实践此方法。To illustrate, various aspects of embodiments within the scope of the appended claims are described below. It should be apparent that the aspects described herein may be embodied in a wide variety of forms and that any specific structure and/or function described herein is illustrative only. Based on this disclosure, those skilled in the art should appreciate that an aspect described herein may be implemented independently of any other aspects and that two or more of these aspects may be combined in various ways. For example, an apparatus may be implemented and/or a method may be practiced using any number of the aspects set forth herein. Additionally, such an apparatus may be implemented and/or such a method may be practiced using other structure and/or functionality in addition to one or more of the aspects set forth herein.
还需要说明的是,以下实施例中所提供的图示仅以示意方式说明本发明的基本构想,图式中仅显示与本发明中有关的组件而非按照实际实施时的组件数目、形状及尺寸绘制,其实际实施时各组件的型态、数量及比例可为一种随意的改变,且其组件布局型态也可能更为复杂。It should also be noted that the drawings provided in the following embodiments are only used to illustrate the basic concept of the present invention in a schematic way, and the drawings only show the components related to the present invention rather than the number, shape and For dimension drawing, the type, quantity and proportion of each component can be changed at will in actual implementation, and the component layout may also be more complicated.
另外,在以下描述中,提供具体细节是为了便于透彻理解实例。然而,所属领域的技术人员将理解,可在没有这些特定细节的情况下实践所述方面。Additionally, in the following description, specific details are provided to facilitate a thorough understanding of the examples. However, one skilled in the art will understand that the described aspects may be practiced without these specific details.
在本发明的一个实施例中,提出一种改善基板变形的支撑件,用于在精密刻蚀工艺时支撑基板1,如图1、2所示,支撑件2为环形支撑件2,用于自基板1的外围边缘部分支撑基板1,与基板1的接触部分设置有吸附部;吸附部用于消除基板1放置在支撑件2后产生的边缘翘曲。In one embodiment of the present invention, a support member for improving the deformation of the substrate is proposed, which is used to support the substrate 1 during the precision etching process. As shown in FIGS. 1 and 2 , the
在本实施例中,基板1为用于精密刻蚀的晶圆级玻璃等,支撑件2设置有与基板1的无缘区域外围边缘形状相匹配的支撑部分,支撑部分与较窄区域多点接触支撑方式不同的是采用面接触支撑或线接触支撑;In this embodiment, the substrate 1 is a wafer-level glass used for precision etching, etc., and the
精密刻蚀工艺的高精度要求,基板1在刻蚀工艺前以及刻蚀工艺时需要进行精确定位,因此本实施例不宜采用胶水吸附,再者由于基板1的边缘翘曲为微翘曲,基板1会在机械固定等固定方式中产生应变变形,机械固定基板1边缘会加剧基板1的偏移、形变,因此本实施例的吸附部为柔性吸附,柔性吸附的具体方式本实施例不作限定。Due to the high precision requirements of the precision etching process, the substrate 1 needs to be precisely positioned before and during the etching process. Therefore, it is not suitable to use glue adsorption in this embodiment. Furthermore, since the edge of the substrate 1 is slightly warped, the substrate 1 is slightly warped. 1. Strain deformation will occur in fixing methods such as mechanical fixing. Mechanically fixing the edge of the substrate 1 will aggravate the deflection and deformation of the substrate 1. Therefore, the adsorption part of this embodiment is flexible adsorption, and the specific method of flexible adsorption is not limited in this embodiment.
在一个实施例中,吸附部为负压吸附槽4。本实施例的负压吸附槽4开设于支撑件2的支撑部分,在完成基板1定位后产持续不断的吸附力;吸附力需均匀,保证基板1的边缘不产生不利于光刻精准定位的翘曲。同时,吸附力的向量需保持吸附基板1时不影响基板1的重心。本实施例的负压吸附槽4的吸附面为环形分布或分段排布;形状为多边形、圆形等几何形状,本实施例对吸附面的具体形状不作限定。In one embodiment, the adsorption part is a negative
在一个实施例中,自基板1的重心点的扩散方向,负压吸附槽4吸附力规律增加。由于基板1的边缘翘曲是由自身重力产生,因此基板1放置在支撑件2上时,越远离基板1的重心的区域翘曲情况越严重;本实施例的负压吸附槽4的吸附力按照具体基板1的重心点以及基板1的具体形状设置吸附力远离基板1重心点的具体增加规律,保证基板1的边缘翘曲被消除。In one embodiment, the adsorption force of the negative
在一个实施例中,负压吸附槽4为多组;吸附部基于负压装置6和导气管5在负压吸附槽4处产生负压;负压装置6用于产生气体负压,基于各导气管5连接各负压吸附槽4。本实施例的各负压吸附槽4在按照以上实施例所完成功能的基础上设置为多组,并分别或分组采用各导气管5传递气体负压,以完成上述实施例中的“负压吸附槽4吸附力规律增加”。In one embodiment, there are multiple sets of negative
在一个实施例中,自基板1中心区向外延伸方向,各负压吸附槽4吸附力递增。本实施例的负压吸附槽4形状具体分布情况如图2、3所示采用多个吸附面为条形的吸附槽,在对基板1一个边缘的整体吸附面上配置多组相互平行或延伸的吸附槽,保证此边缘吸附面能够被充分覆盖。需要说明的是,当基板1的一个边缘的形状不为直线时,吸附槽的排布情况依据此边缘的具体形状求额定,需保证此边缘吸附面能够被充分覆盖。本实施例的以基板1的中心延伸后距离由近及远的负压吸附槽4以依次递增的方式提高吸附力。In one embodiment, the suction force of each negative
在一个实施例中,如图6所示,负压装置6基于多个导气管5分别连接各负压吸附槽4。本实施例为降低制造成本及控制成本,采用一个负压装置6分别连接所有负压吸附槽4。In one embodiment, as shown in FIG. 6 , the
在一个实施例中,各负压吸附槽4呈环形分布在支撑件2上。在一个实施例中,基板为石英基板,支撑件2结构上有紧固螺孔3和负压吸附槽4两个关键结构。如图1和图2所示,其中图3是负压吸附槽4的放大显示。其中紧固螺孔3是用于将支撑件2固定在光刻机的工作台上,由于该实施例中工作台所起作用不大图示未画出。负压吸附槽4作用是将石英基板1搭在支撑件2上时用于真空吸附的,通过负压吸附槽4的真空吸附作用可有效改善薄的石英基板由于重力作用造成的变形。In one embodiment, the negative
为了更直观的表明通过负压吸附槽4的真空吸附作用可明显改善薄的石英基板的变形,该实施例通过有限元仿真的方法对石英基板1的变形进行分析。在该实施例中,石英基板1的尺寸为240mm*240mm*6mm,其中有效区域为210mm*210mm,有效区外搭接在支撑件2上,在支撑边缘处有7个1mm宽的负压吸附槽4。In order to more intuitively show that the deformation of the thin quartz substrate can be significantly improved by the vacuum adsorption of the negative
在重力作用下,6mm的石英基板1在没有真空吸附力的作用下,其有效区域最大变形为731.6nm;当通过负压吸附槽4对石英基板1进行1bar的真空吸附力时,石英基板1有效区域的最大变形为287.3nm,降低了60.7%,如图4所示。Under the action of gravity, the 6mm quartz substrate 1 has a maximum deformation of 731.6 nm in its effective area without the action of vacuum adsorption; The maximum deformation of the effective area is 287.3 nm, a decrease of 60.7%, as shown in Fig. 4.
本实施例给出在不同吸附力与石英基板1的最大变形之间的关系,如图5所示。石英基板1的最大变形ymm与吸附力xbar之间的关系为:y=-0.0034x+0.2933。由此可估算出当吸附力大概为86bar时,石英基板1由于重力作用造成的有效区域内的变形趋近于零,同时,本实施例各负压吸附槽的吸附力根据基板的面型可调设置。This embodiment shows the relationship between different adsorption forces and the maximum deformation of the quartz substrate 1, as shown in FIG. 5 . The relationship between the maximum deformation ymm of the quartz substrate 1 and the adsorption force xbar is: y=-0.0034x+0.2933. Therefore, it can be estimated that when the adsorption force is about 86 bar, the deformation in the effective area of the quartz substrate 1 due to the action of gravity tends to be zero. Adjust settings.
如此,就可以通过该方法提前预估出不同厚度基板的工艺,防止在边缘区域支撑的基板的变形,保证其结构分辨率和均匀性,提高加工效率。In this way, the process of substrates with different thicknesses can be predicted in advance by this method, the deformation of the substrates supported in the edge region can be prevented, the structural resolution and uniformity thereof can be ensured, and the processing efficiency can be improved.
以上所述,仅为本发明的具体实施方式,但本发明的保护范围并不局限于此,任何熟悉本技术领域的技术人员在本发明揭露的技术范围内,可轻易想到的变化或替换,都应涵盖在本发明的保护范围之内。因此,本发明的保护范围应以权利要求的保护范围为准。The above are only specific embodiments of the present invention, but the protection scope of the present invention is not limited thereto. Any person skilled in the art who is familiar with the technical scope disclosed by the present invention can easily think of changes or substitutions. All should be covered within the protection scope of the present invention. Therefore, the protection scope of the present invention should be subject to the protection scope of the claims.
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KR101514734B1 (en) * | 2014-01-07 | 2015-04-23 | 박수민 | Adhesion unit |
CN206363991U (en) * | 2016-12-16 | 2017-07-28 | 中芯国际集成电路制造(北京)有限公司 | Wafer carrying instrument |
CN107342255A (en) * | 2016-05-03 | 2017-11-10 | 系统科技公司 | Baseplate support device |
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KR101514734B1 (en) * | 2014-01-07 | 2015-04-23 | 박수민 | Adhesion unit |
CN107342255A (en) * | 2016-05-03 | 2017-11-10 | 系统科技公司 | Baseplate support device |
CN206363991U (en) * | 2016-12-16 | 2017-07-28 | 中芯国际集成电路制造(北京)有限公司 | Wafer carrying instrument |
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