CN114975103A - Method for dividing semiconductor wafer - Google Patents

Method for dividing semiconductor wafer Download PDF

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Publication number
CN114975103A
CN114975103A CN202111176592.9A CN202111176592A CN114975103A CN 114975103 A CN114975103 A CN 114975103A CN 202111176592 A CN202111176592 A CN 202111176592A CN 114975103 A CN114975103 A CN 114975103A
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CN
China
Prior art keywords
semiconductor wafer
blade
ring
cutting
trimming
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Pending
Application number
CN202111176592.9A
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Chinese (zh)
Inventor
松尾泰弘
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Publication of CN114975103A publication Critical patent/CN114975103A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Dicing (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Grinding-Machine Dressing And Accessory Apparatuses (AREA)

Abstract

The invention provides a method for dividing a semiconductor wafer, which can recycle a trimming component and can perform isotropic extension of a cutting tape. When the blade (28) is trimmed with the aim of improving the sharpness of the blade (28), the trimming member (28) is not completely cut off because the blade (28) passes over the trimming member (16). Therefore, the dressing member (16) used once in the dressing blade (28) can be reused. In addition, no finishing member (28) is attached to the inner side of the first ring (14). Therefore, the dicing tape (10) can be elongated isotropically.

Description

Method for dividing semiconductor wafer
Technical Field
The present disclosure relates to a method of dividing a semiconductor wafer.
Background
In order to divide a semiconductor wafer and take it out as a semiconductor chip, a dicing step and a spreading step are required. In the dicing step, the semiconductor wafer bonded to the dicing tape is cut into a lattice shape by a blade, and is divided into a plurality of semiconductor chips. In the spreading process, the dicing tape is isotropically stretched to separate the semiconductor chips from each other. The semiconductor chip is taken out after the above-described steps.
In the dicing step, chipping may occur. When the semiconductor wafer is cut, the blade is clogged with metal, organic matter, and the like contained in the semiconductor wafer. Due to the blockage, the sharpness of the blade is reduced. When the semiconductor wafer is cut by the blade having deteriorated sharpness, a notch is generated in the dicing line. The occurrence of such a notch is referred to as chipping.
In order to prevent chipping, dressing of the blade is effective. When the cutting edge of the blade having a reduced cutting edge is trimmed by the trimming member, the cutting edge of the blade is restored, and chipping is prevented.
Patent document 1 discloses a method of cutting a semiconductor wafer after trimming a blade by disposing a trimming member near the semiconductor wafer. In this method, a trimming member is attached to a dicing tape near a semiconductor wafer. The blade is controlled to pass through the dressing member each time before the semiconductor wafer is cut. By this method, the sharpness of the blade is restored before the cutting of the semiconductor wafer.
Patent document 1: japanese patent laid-open publication No. 2014-024135
However, the method disclosed in patent document 1 has a problem that the finishing member cannot be reused. In this method, after the dicing step of the semiconductor wafer is completed, the trimming member is kept in a state of being attached to the dicing tape. Therefore, if the blade does not completely cut the dressing member during dressing, it is difficult to stretch the dicing tape isotropically, and the dicing tape cannot be spread normally. However, if the trimming member is cut for normal expansion, the cut trimming member cannot be reused.
Disclosure of Invention
The present disclosure has been made to solve the above-described problems, and an object of the present disclosure is to provide a method for dividing a semiconductor wafer, which can recycle a trimming member and can elongate a dicing tape isotropically.
The method for dividing a semiconductor wafer according to the present disclosure includes: a bonding step of bonding the semiconductor wafer, the first ring, the trimming member, and the second ring to the dicing tape so that the first ring is positioned at a position surrounding the semiconductor wafer, the trimming member is positioned at a position outside the first ring, and the second ring is positioned at a position surrounding the first ring and the trimming member; a dicing step of cutting the semiconductor wafer by the blade a plurality of times after the bonding step until the semiconductor wafer is completely divided into the semiconductor chips; and a dicing tape cutting step of cutting the dicing tape so as not to include the dressing member and the second ring on the inner side of the outer side of the first ring after the dicing step, wherein the blade is dressed by passing the blade over the dressing member in the dicing step.
According to the semiconductor wafer dividing method of the present disclosure, the blade does not completely cut the trimming member at the time of trimming, and the trimming member is not attached to the inner side of the first ring, so that the recycling of the trimming member and the isotropic elongation of the dicing tape can be performed.
Drawings
Fig. 1 is a plan view of a dicing tape to which a semiconductor wafer, a first ring, a dressing member, and a second ring are attached in a semiconductor wafer dividing method according to embodiment 1.
Fig. 2 is a cross-sectional view of a dicing tape to which a semiconductor wafer, a first ring, a dressing member, and a second ring are attached in the method for dividing a semiconductor wafer according to embodiment 1.
Fig. 3 is a cross-sectional view showing a state in which a dicing tape is set in a dicing apparatus in the semiconductor wafer dividing method according to embodiment 1.
Fig. 4 is a cross-sectional view for explaining a dicing step in the method for dividing a semiconductor wafer according to embodiment 1.
Fig. 5 is a plan view of the semiconductor wafer after the dicing step in the method for dividing a semiconductor wafer according to embodiment 1.
Fig. 6 is a plan view of the semiconductor wafer, the first ring, and the dicing tape after the dicing tape cutting step in the semiconductor wafer dividing method according to embodiment 1.
Fig. 7 is a plan view of a dicing tape to which a semiconductor wafer, a first ring, a dressing member, and a second ring are attached in the method for dividing a semiconductor wafer according to embodiment 3.
Description of the reference numerals
Cutting the tape; a semiconductor wafer; a first ring; finishing a component; a second ring; a semiconductor chip; a cutting device; a chuck table; a clamp; a blade.
Detailed Description
Embodiment mode 1
A method for dividing a semiconductor wafer according to embodiment 1 will be described.
First, as shown in fig. 1 and 2, a step of attaching the semiconductor wafer 12, the first ring 14, the dressing member 16, and the second ring 18 to the dicing tape 10 is performed. Fig. 1 is a view of the dicing tape 10 after the sticking step, as viewed from above. Fig. 2 is a sectional view a-a of fig. 1. In this step, the semiconductor wafer 12, the first ring 14, the trimming member 16, and the second ring 18 are attached to the dicing tape 10 such that the first ring 14 is positioned to surround the semiconductor wafer 12, the trimming member 16 is positioned outside the first ring 14, and the second ring 18 is positioned to surround the first ring 14 and the trimming member 16. The order of application is not particularly limited.
The dressing member 16 is formed by fixing green emery abrasive grains made of silicon carbide having a thickness of about 1mm with a resin binder made of a phenolic resin to which a filler is added. In addition, a silicon plate or the like may be used. Although the trimming member 16 is disposed on the left and lower sides of the semiconductor wafer 12 in fig. 1, at least 2 trimming members may be disposed so that the angle between the directions from the center of the semiconductor wafer 12 toward the trimming member 16 is 90 degrees. In this manner, when the semiconductor wafer 12 is cut in the dicing step described later in either of the two directions, trimming by the blade 28 to cutting of the semiconductor wafer 12 can be smoothly performed.
Next, as shown in fig. 3, the dicing tape 10 in the state of fig. 1 is set to a cutting device 22. The cutting device 22 includes a chuck table 24, a jig 26, and a blade 28. Here, dicing tape 10 is placed on chuck table 24 and second ring 18 is secured with clamp 26. In addition, the dicing tape 10 is vacuum-sucked through the porous material for the upper surface of the chuck table 24.
Next, as shown in fig. 4, a dicing process is performed in which the trimming of the blade 28 and the cutting of the semiconductor wafer 12 are performed. The movement of the blade 28 is indicated by the dashed lines. The direction of rotation of the blade 28 is indicated by the arrow. In this step, first, the blade 28 passes through the upper portion of the dressing member 16, thereby dressing the blade 28. The blade 28 now passes only over the upper part of the dressing member 16 and not through its lower end. Thus, blade 28 does not sever dressing member 16. The blade 28 then passes over the first ring 14. Next, the blade 28 cuts the semiconductor wafer 12. However, the dicing tape 10 is not cut. Trimming of the blade 28 and cutting of the semiconductor wafer 12 are repeated by shifting the position of the blade 28 in a direction perpendicular to the cutting direction. When the cutting in one direction is finished, the cutting direction is rotated by 90 degrees, and the same process is repeated. In the dicing step, the semiconductor wafer 12 is cut by the blade 28 a plurality of times until the semiconductor wafer 12 is completely divided into the semiconductor chips 20 as shown in fig. 5. The rotation direction of the blade 28 may be determined depending on the material of the semiconductor wafer 12, or may be the opposite direction.
The height direction position of the blade 28 differs between when passing over the dressing member 16, when passing above the first ring 14, and when cutting the semiconductor wafer 12. The heights of the lower ends of the blades 28 when the blades 28 pass above the dresser 16, when the blades pass above the first ring 14, and when the semiconductor wafer 12 is cut are Z1, Z2, and Z3, respectively. The height is referenced to the upper surface of the chuck table 24. The values of Z1 to Z3 may be appropriately determined based on the conditions such as the thicknesses of the dressing member 16, the first ring 14, and the semiconductor wafer 12. The blade 28 moves while changing the height according to the location based on the values of Z1 to Z3 in accordance with a program stored in a storage device (not shown) inside or outside the cutting device 22.
Next, a dicing tape cutting step of cutting the dicing tape 10 is performed. In this step, the dicing tape 10 is cut outside the first ring 14 so as not to include the dressing member 16 and the second ring 18 inside. Fig. 6 shows the dicing tape 10 cut along the outer edge of the first ring 14 in a state where the semiconductor wafer 12 and the first ring 14 are attached.
Thereafter, as shown in fig. 6, the dicing tape 10 cut outside the first ring 14 is conveyed to an expanding device (not shown), and the dicing tape 10 is isotropically stretched by the first ring 14 to separate the semiconductor chips 20 from each other. In this case, the conventional expanding device can be used as it is as long as the shape of the first ring 14 is the same as that of the conventional ring for cutting. The distance separating the semiconductor chips 20 from each other is to avoid contact with and interference with an adjacent chip when the semiconductor chips 20 are picked up. Thereafter, when the dicing tape 10 is UV-curable, the process proceeds to a transfer step of rearranging, as a product, the chips that have passed the electrical test such as a wafer test and the like and the acceptable chips that have passed the appearance inspection test, on a tray or the like, or an assembly step of assembling the chips into a package or the like, through a UV irradiation step.
As described above, according to this embodiment, the dressing member 16 is not completely cut when the blade 28 passes through the dressing member 16, and therefore the dressing member 16 can be reused.
In the dicing tape cutting step, the trimming member 16 is not included inside the dicing tape 10 cut outside the first ring 14, and only the semiconductor wafer 12 and the first ring 14 are bonded. Therefore, when the expansion is performed, the dicing tape 10 can be isotropically stretched.
In addition, since the finishing member 16 is not attached to the inside of the first ring 14, it is not necessary to remove the finishing member 16 from the dicing tape 10 in order to isotropically stretch the dicing tape 10 when expanding. When the trimming member 16 is stuck inside the first ring 14, the trimming member 16 must be removed from the dicing tape 10 in order to spread isotropically, but the removal may damage the dicing tape 10 or the semiconductor chip 20. There is no such concern in this embodiment.
In the above description, trimming is performed before the semiconductor wafer 12 is cut every time, but trimming may be performed after the semiconductor wafer 12 is cut a plurality of times. This reduces the wear of the finishing member 16 and reduces the time required for the cutting process.
Embodiment mode 2
A method for dividing a semiconductor wafer according to embodiment 2 will be described. Here, the description is mainly different from embodiment 1.
In this embodiment, when chipping occurs due to cutting of the semiconductor wafer 12 by the blade 28, trimming of the blade 28 using the trimming member 16 is performed before the next cutting of the semiconductor wafer 12. Whether or not chipping has occurred may be checked visually, or a method of analyzing an image captured by a camera may be used.
As described above, according to this embodiment, trimming is performed every time chipping occurs, and therefore, occurrence of chipping after chipping can be suppressed. In addition, since the number of times of trimming can be suppressed as compared with the case where trimming is performed each time before cutting of the semiconductor wafer, there are also effects of reducing the wear of the trimming member 16 and reducing the time taken for the dicing process.
Embodiment 3
A method for dividing a semiconductor wafer according to embodiment 3 will be described with reference to fig. 7. Here, the description is mainly different from embodiment 1.
In this embodiment, in the cutting step, dressing is performed by passing a blade 28 (not shown) through the upper portion of the dressing member 16 in the longitudinal direction of the dressing member 16, as indicated by arrow a shown in fig. 7. The longitudinal direction of the dresser member 16 on the paper of fig. 7 is the left-right direction.
The semiconductor wafer 12 is cut by cutting the semiconductor wafer 12 with the blade 28 in the longitudinal direction of the dressing member 16 as indicated by arrow B. Then, trimming of the blade 28 is performed again as indicated by arrow a. Next, the semiconductor wafer 12 is cut as indicated by arrow C shifted from arrow B. The trimming by the blade 28 and the cutting of the semiconductor wafer 12 are repeated to complete the cutting of the semiconductor wafer 12 in one direction. When the cutting in one direction is finished, the cutting direction is rotated by 90 degrees, and the same process is repeated.
In fig. 7, only one dressing member 16 is shown, but for the sake of explanation, at least 2 dressing members are actually arranged as shown in fig. 1. In fig. 7, the dressing member 16, not shown, is used for dressing after rotating the cutting direction by 90 degrees.
As described above, according to this embodiment, since the blade 28 passes through the dressing member 16 in the longitudinal direction of the dressing member 16, the dressing effect of the blade 28 is improved. When the blade 28 passes in the longitudinal direction of the dressing member 16, the dressing time becomes longer than that in the case of passing in the short-side direction. Since the dressing time becomes long, the blade 28 can be sufficiently dressed.
In the above description, the trimming of the blade 28 is performed before the semiconductor wafer 12 is cut every time, but the trimming may be performed after the semiconductor wafer 12 is cut a plurality of times. Or may be performed each time a defect occurs.
In addition, in the case of the multiple dressing indicated by the arrow a in fig. 7, the position of the blade 28 passing through the upper portion of the dressing member 16 in the short side direction of the blade 28 may be shifted every dressing or periodically. This provides an effect of reducing the wear of the dressing member 16.

Claims (5)

1. A method for dividing a semiconductor wafer, wherein,
the disclosed device is provided with:
a bonding step of bonding the semiconductor wafer, the first ring, the trimming member, and the second ring to a dicing tape so that the first ring is positioned to surround the semiconductor wafer, the trimming member is positioned outside the first ring, and the second ring is positioned to surround the first ring and the trimming member;
a dicing step of cutting the semiconductor wafer by a blade a plurality of times after the bonding step until the semiconductor wafer is completely divided into semiconductor chips; and
a dicing tape cutting step of cutting the dicing tape so as not to include the dressing member and the second ring on the inner side of the outer side of the first ring after the dicing step,
in the cutting process, the blade passes through an upper portion of the dressing member, thereby dressing the blade.
2. The method for dividing a semiconductor wafer according to claim 1,
in the dicing step, the trimming is performed before the semiconductor wafer is cut.
3. The method for dividing a semiconductor wafer according to claim 1,
in the dicing step, when chipping occurs due to cutting of the semiconductor wafer, the trimming is performed before next cutting of the semiconductor wafer is performed.
4. The method for dividing a semiconductor wafer according to any one of claims 1 to 3,
the dressing is performed by passing the blade over the dressing member in the longitudinal direction of the dressing member,
the cutting of the semiconductor wafer is performed by cutting the semiconductor wafer with the blade in a longitudinal direction of the dressing member.
5. The method for dividing a semiconductor wafer according to any one of claims 1 to 4,
the blade passing over the first ring during a cut transfer from the trim to the semiconductor wafer,
the blade has a different height position when passing over the dressing member, when passing over the first ring, and when cutting the semiconductor wafer.
CN202111176592.9A 2021-02-24 2021-10-09 Method for dividing semiconductor wafer Pending CN114975103A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2021-027131 2021-02-24
JP2021027131A JP2022128744A (en) 2021-02-24 2021-02-24 Division method of semiconductor wafer

Publications (1)

Publication Number Publication Date
CN114975103A true CN114975103A (en) 2022-08-30

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Application Number Title Priority Date Filing Date
CN202111176592.9A Pending CN114975103A (en) 2021-02-24 2021-10-09 Method for dividing semiconductor wafer

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JP (1) JP2022128744A (en)
CN (1) CN114975103A (en)

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JP2022128744A (en) 2022-09-05

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