CN114973339A - Light sensing device - Google Patents

Abstract

The invention discloses a light sensing device which comprises a sensing pixel, a driving circuit and a first shading layer. The sensing pixel comprises a sensing circuit and a sensing element electrically connected with the sensing circuit. The driving circuit is electrically connected to the sensing circuit. The first light shielding layer comprises at least one first opening corresponding to the sensing element, and the first light shielding layer overlaps the driving circuit in the overlooking direction of the light sensing device.

Description

Light sensing device

Technical Field

The present disclosure relates to light sensing devices, and particularly to a light sensing device including a light shielding layer.

Background

In recent years, a technology of integrating a light sensor into an electronic product is developed, for example, the light sensor may be applied to a display device such as a smart phone or a tablet computer in cooperation with a light collimation (collimator-like) structure to perform fingerprint recognition. However, according to the design of the conventional light collimating structure, stray light or ambient light may affect the operation of the light sensor, resulting in poor signal-to-noise ratio (signal-to-noise ratio).

Disclosure of Invention

An objective of the present invention is to provide a photo sensor device to solve the problems encountered in the conventional photo sensor devices, and the design of the light shielding layer can reduce the influence of stray light or ambient light, thereby increasing the signal-to-noise ratio of the optical signal, or reducing the complexity of the manufacturing process or improving the adhesion between layers.

An embodiment of the present invention provides a light sensing device, which includes a sensing pixel, a driving circuit, and a first light shielding layer. The sensing pixel comprises a sensing circuit and a sensing element electrically connected with the sensing circuit. The driving circuit is electrically connected to the sensing circuit. The first light shielding layer comprises at least one first opening corresponding to the sensing element, and the first light shielding layer overlaps the driving circuit in the overlooking direction of the light sensing device.

Drawings

Fig. 1 is a schematic structural diagram of a photo sensing device according to an embodiment of the present invention.

Fig. 2 is a schematic circuit architecture diagram of a sensing pixel of a photo sensing device according to an embodiment of the invention.

Fig. 3 is a partial cross-sectional view of a photo-sensing device according to a first embodiment of the invention.

Fig. 4 is a partial cross-sectional view of a photo-sensing device according to a second embodiment of the invention.

Fig. 5 is a partial cross-sectional view of a photo-sensing device according to a third embodiment of the invention.

Fig. 6 is a partial cross-sectional view of a photo-sensing device according to a fourth embodiment of the invention.

Fig. 7 is a partial cross-sectional view of a light sensing device according to a variation of the fourth embodiment of the present invention.

Fig. 8 is a partial cross-sectional view of a photo-sensing device according to an embodiment of the invention.

Description of reference numerals: 100-a substrate layer; 102-a substrate; 104-a buffer layer; 110-a multiplexer; 120-a circuit board; 130-a signal reading element; 200-a circuit layer; 210-a sensing pixel; 212-a sensing circuit; 214-a sensing element; 220-a drive circuit; 220S, 210S1, 210S 2-lateral; 231-channel layer; 232-a gate insulation layer; 233-gate; 234 — a first electrode; 235-a second electrode; 236-a dielectric layer; 240. 246, 248, 252, 254, 315, 325 — an insulating layer; 242-an electrode layer; 250-a transparent conductive layer; 300-a light collimating structure; 310. 320, 330-light shielding layer; 312 — a first opening; 320a, 320 b-edge; 322-a second opening; 332-third opening; 340-a microlens; 350. 352, 354, 356, 358, 360-protective layer; d1 — first pitch; d2 — second spacing; l1 — first extension distance; l2 — second extension distance; r1 — sensing region; r2-peripheral area; an SD-light sensing device; TFT1, TFT2, TFT3, 230-thin film transistor; vcc2, Vcc1, Vcc 0-operating voltage; vout-output voltage; vrst-reset voltage; vsel-select voltage; w1, W2, W3-width; the X-direction; y-top view direction; theta-angle.

Detailed Description

The present invention will be described in detail with reference to the following detailed description and accompanying drawings, wherein the various figures are drawn for clarity of understanding only and are not drawn to scale. In addition, the number and size of the elements in the drawings are merely illustrative and are not intended to limit the scope of the present invention.

Certain terms are used throughout the description and following claims to refer to particular elements. Those skilled in the art will appreciate that electronic device manufacturers may refer to the same components by different names. This document does not intend to distinguish between components that differ in function but not name. In the following specification and claims, the words "comprise", "comprising", "includes" and "including" are open-ended words that should be interpreted as meaning "including, but not limited to …". When the terms "comprises," "comprising," and/or "having" are used in this specification, they specify the presence of stated features, regions, steps, operations, and/or elements, but do not preclude the presence or addition of one or more other features, regions, steps, operations, elements, and/or groups thereof.

When an element or layer is referred to as being "on" or "connected to" another element or layer, it can be directly on or connected to the other element or layer or intervening elements or layers may be present. In contrast, when an element is referred to as being "directly on" or "directly connected to" another element or film, there are no intervening elements or films present between the two.

Directional phrases used herein include, for example: "upper", "lower", "front", "rear", "left", "right", etc., refer only to the orientation of the figures. Accordingly, the directional terminology is used for purposes of illustration and is in no way limiting. In the drawings, various figures depict typical features of structure and/or materials used in particular embodiments. These drawings, however, should not be construed as defining or limiting the scope or nature encompassed by these embodiments. For example, the relative dimensions, thicknesses, and locations of various layers, regions, and/or structures may be reduced or exaggerated for clarity.

The use of ordinal numbers such as "first," "second," etc., in the specification and claims to modify an element, is not itself intended to imply any previous order to the element(s), nor is the order in which an element may be sequenced or methods of manufacture to distinguish it from another element having a similar designation. The claims may not use the same words in the specification, and accordingly, a first element in a specification may be a second element in a claim.

The terms "about," "equal to," or "the same," "substantially," or "approximately" are generally construed as being within 20% of a given value or range, or as being within 10%, 5%, 3%, 2%, 1%, or 0.5% of a given value or range.

It is to be understood that the features of the various embodiments may be interchanged, recombined, mixed and modified in order to implement other embodiments without departing from the spirit of the present invention.

Please refer to fig. 1, fig. 2 and fig. 3. Fig. 1 is a schematic structural diagram of a photo sensing device according to an embodiment of the present invention. Fig. 2 is a schematic circuit architecture diagram of a sensing pixel of a photo sensing device according to an embodiment of the invention. Fig. 3 is a partial cross-sectional view of a photo-sensing device according to a first embodiment of the invention. As shown in fig. 1, fig. 2 and fig. 3, the photo sensing device SD according to an embodiment of the invention has a sensing region R1 and a peripheral region R2, the peripheral region R2 is adjacent to the sensing region R1, for example, the peripheral region R2 may be located around the sensing region R1, but not limited thereto. The light sensing device SD may include sensing pixels 210 and a driving circuit 220, the sensing pixels 210 may be disposed in the sensing region R1, and the driving circuit 220 may be disposed in the peripheral region R2. The light sensing device SD may include a plurality of sensing pixels 210, and the plurality of sensing pixels 210 may be disposed in an array manner in the sensing region R1, for example, but is not limited thereto. In some embodiments, as shown in fig. 1, the multiplexer 110 (MUX) may be disposed in the peripheral region R2, at least a portion of the circuit board 120 may be disposed in the peripheral region R2 and the signal reading element 130 may be disposed on the circuit board 120, for example, the driving circuit 220 may be disposed in the peripheral region R2 located at one side (e.g., left side or right side) of the sensing region R1, and the multiplexer 110 and at least a portion of the circuit board 120 may be disposed in the peripheral region R2 located at the other side (e.g., the lower side) of the sensing region R1, but not limited thereto.

One sensing pixel 210 may include a sensing circuit 212 and a sensing element 214 electrically connected to the sensing circuit 212, as shown in fig. 2, and the sensing circuit 212 may be electrically connected to a driving circuit 220 located in the peripheral region R2. The sensing element 214 may be, for example, a photodiode (photodiode), a phototransistor (phototransistor), a metal-semiconductor-metal photosensitive element (MSM photosensitive element), or any suitable photosensitive element, but is not limited thereto. The driving circuit 220 may include a plurality of thin film transistors (not shown), and the driving circuit 220 may be configured to provide the reset voltage Vrst and the selection voltage Vsel. For clarity of explanation, the sensing element 214 of the present embodiment is illustrated by taking a photodiode as an example. In some embodiments, as shown in FIG. 2, the sensing pixel 210 may include a plurality of sensing elements 214 electrically connected to the sensing circuit 212, and the sensing circuit 212 may include a TFT1, a TFT2, and a TFT3, for example. The anode of the sensing element 214 is electrically connected to the operating voltage Vcc2, the cathode of the sensing element 214 is electrically connected to the first electrode of the thin film transistor TFT1 and the gate of the thin film transistor TFT2, the thin film transistor TFT2 can generate a signal according to the change of the cathode voltage of the sensing element 214, the thin film transistor TFT2 is electrically connected to the thin film transistor TFT3, and the thin film transistor TFT3 controls whether the signal is output based on the selection voltage Vsel. The TFT1 can be used as a reset element to reset a signal, the TFT2 can be used as a source follower element to make a signal from the source follow a signal from the gate, and the TFT3 can be used as a selection element to provide a signal output. The second electrode of the TFT1 may be electrically connected to the operating voltage Vcc1, the gate of the TFT1 may be electrically connected to the reset voltage Vrst, the first electrode of the TFT2 may be electrically connected to the operating voltage Vcc0, the second electrode of the TFT2 may be electrically connected to the first electrode of the TFT3, the gate of the TFT3 may be electrically connected to the select voltage Vsel, and the second electrode of the TFT3 may output an output voltage Vout.

As shown in fig. 3, the light sensing device SD may include a substrate layer 100, a circuit layer 200, and a light collimating structure 300, the circuit layer 200 being disposed on the substrate layer 100, and the light collimating structure 300 being disposed on the circuit layer 200. In some embodiments, the base layer 100 may include a substrate 102 and a buffer layer 104, the buffer layer 104 disposed on the substrate 102, wherein the substrate 102 may include a hard material and/or a soft material, such as glass, a quartz substrate, Polyimide (PI), polyethylene terephthalate (PET), other suitable materials, or a combination thereof, but is not limited thereto. The circuit layer 200 may include a plurality of thin film transistors 230, an insulating layer 240, an electrode layer 242, a sensing element 214, an insulating layer 246, an insulating layer 248, a transparent conductive layer 250, an insulating layer 252, and an insulating layer 254 sequentially arranged along a top direction Y opposite to the light sensing device SD. The transparent conductive layer 250 may include Indium Tin Oxide (ITO), for example. The insulating layer 240, the insulating layer 246, the insulating layer 248, the insulating layer 252, and the insulating layer 254 may include, for example, an organic material or an inorganic material, and the inorganic material may include, for example, a silicon oxide compound (SiOx), a silicon nitride compound (SiNx), other suitable materials, or a combination thereof. The electrode layer 242 may include, for example, a metal material. The thin film transistor 230 is used as a switching element or a driving element (for example, the thin film transistor TFT1, the thin film transistor TFT2, and the thin film transistor TFT3 shown in fig. 2), the thin film transistor 230 may include a channel layer 231, a gate insulating layer 232, a gate 233, a first electrode 234 (for example, a source), a second electrode 235 (for example, a drain), and a dielectric layer 236, but not limited thereto, and the stack of the thin film transistor 230 shown in fig. 3 is only an example.

As shown in fig. 1 and 3, the light collimating structure 300 of the photo-sensing device SD may include a light shielding layer 310 (or referred to as a first light shielding layer), the light shielding layer 310 includes at least one first opening 312 corresponding to the sensing element 214, and the light shielding layer 310 overlaps the driving circuit 220 in the top view direction Y of the photo-sensing device SD. By the design of the light-shielding layer 310, the light-collimating function can be provided for the sensing element 214, or the influence of light on the driving circuit 220 can be reduced, so as to reduce the influence of stray light or ambient light, thereby improving the signal-to-noise ratio of the optical signal of the sensing pixel 210. In some embodiments, the light-shielding layer 310 may include an organic material, such as a light-absorbing material including a black photoresist material. The light-shielding layer 310 may improve the signal-to-noise ratio of the optical signal, or may reduce the generation of stray capacitance between the light-shielding layer 310 and the transparent conductive layer 250, thereby increasing the sensitivity of the sensing element 214.

In some embodiments, as shown in fig. 3, the light collimating structure 300 of the light sensing device SD may include a light shielding layer 310 (or referred to as a first light shielding layer), an insulating layer 315, a light shielding layer 320 (or referred to as a second light shielding layer), an insulating layer 325, a light shielding layer 330 (or referred to as a third light shielding layer), and a microlens 340, which are sequentially disposed along a direction opposite to the top view direction Y. The insulating layer 315 is disposed between the first light shielding layer 310 and the second light shielding layer 320, and the insulating layer 325 is disposed between the second light shielding layer 320 and the third light shielding layer 330, wherein the insulating layer 315 and the insulating layer 325 may include an organic material, for example. The first shielding layer 310 may be disposed between the second shielding layer 320 and the sensing element 214, and the second shielding layer 320 includes at least one second opening 322 overlapping the first opening 312 of the first shielding layer 310 in the top view direction Y. The size of the first apertures 312 of the first light-shielding layer 310 may be smaller than the size of the second apertures 322 of the second light-shielding layer 320, for example, the width W1 of the first apertures 312 in the direction X may be smaller than the width W2 of the second apertures 322, wherein the direction X may be substantially perpendicular to the top view direction Y. The microlenses 340 can be disposed on the first light-shielding layer 310, and the microlenses 340 overlap the first openings 312 in the top view direction Y. For example, the first opening 312 may correspond to a central or thickest portion of one microlens 340, but not limited thereto. The third light-shielding layer 330 may be disposed between the microlenses 340 and the first light-shielding layer 310 and between the microlenses 340 and the second light-shielding layer 320, and the third light-shielding layer 330 includes at least one third opening 332 overlapping the first opening 312 of the first light-shielding layer 310 in the top view direction Y. The size of the first apertures 312 of the first light-shielding layer 310 may be smaller than the size of the third apertures 332 of the third light-shielding layer 330, for example, the width W1 of the first apertures 312 in the direction X may be smaller than the width W3 of the third apertures 332.

In some embodiments, the first light-shielding layer 310, the second light-shielding layer 320 and the third light-shielding layer 330 may include organic materials, such as black photoresist, so that the first light-shielding layer 310 disposed between the insulating layer 254 and the insulating layer 315, the second light-shielding layer 320 disposed between the insulating layer 315 and the insulating layer 325 and/or the third light-shielding layer 330 disposed between the insulating layer 325 and the microlens 340 may have good adhesion, and no additional protective layer may be disposed between these layers to improve adhesion, thereby reducing the influence of the protective layer on light transmission. In addition, the first light-shielding layer 310, the insulating layer 315, the second light-shielding layer 320, the insulating layer 325, the third light-shielding layer 330 and the micro-lenses 340 can be formed by a yellow light process, so that the process complexity can be reduced.

Please refer to fig. 4. Fig. 4 is a partial cross-sectional view of a photo-sensing device according to a second embodiment of the invention. In some embodiments, as shown in fig. 4, the light collimating structure 300 of the light sensing device SD may include a light shielding layer 310, an insulating layer 315, a light shielding layer 320, an insulating layer 325, a light shielding layer 330, and a microlens 340. The light-shielding layer 310 may be disposed between the light-shielding layer 320 and the sensing element 214, wherein the light-shielding layer 320 includes an organic material, such as a black photoresist material, and the light-shielding layer 310 includes a metal material. Since the light-shielding layer 310 includes a metal material, the light-shielding layer 310 can be manufactured with an opening 312 having a smaller size to improve the signal-to-noise ratio of the optical signal. The light-shielding layer 330 may be disposed between the microlenses 340 and the light-shielding layer 320, and the light-shielding layer 330 includes an organic material. The insulating layer 315, the light-shielding layer 320, the insulating layer 325, the light-shielding layer 330 and the micro-lenses 340 are formed by a photolithography process, thereby reducing the complexity of the process. In some embodiments, the light-collimating structure 300 may further include a protection layer 350 and/or a protection layer 352, the protection layer 350 may be disposed between the light-shielding layer 310 and the insulating layer 254, and the protection layer 352 may be disposed between the light-shielding layer 310 and the insulating layer 315 to improve adhesion between the light-shielding layer 310 and the insulating layer 254 or between the light-shielding layer 310 and the insulating layer 315, and increase reliability of the light sensing device SD, wherein the protection layer 350 and the protection layer 352 may include silicon nitride compound (SiNx), silicon oxide compound (SiOx), other suitable materials, or a combination thereof, but not limited thereto. In some embodiments, the protection layer 352 may be replaced by an anti-reflection layer disposed on the light-shielding layer 310, wherein the anti-reflection layer may be a multi-layer composite structure composed of a high refractive index layer and a low refractive index layer, but is not limited thereto. In some embodiments, the light collimating structure 300 may further include a protection layer 354 disposed between the light shielding layer 330 and the microlenses 340 to improve adhesion between the light shielding layer 330 and the microlenses 340 and increase reliability of the light sensing device SD, wherein the protection layer 354 may include a silicon nitride compound (SiNx), a silicon oxide compound (SiOx), other suitable materials, or a combination thereof, but is not limited thereto.

Please refer to fig. 5. Fig. 5 is a partial cross-sectional view of a photo sensing device according to a third embodiment of the present invention. In some embodiments, as shown in fig. 5, the light collimating structure 300 of the light sensing device SD may include a light shielding layer 310, an insulating layer 315, a light shielding layer 320, an insulating layer 325, a light shielding layer 330, and a microlens 340. The light-shielding layer 310 may be disposed between the light-shielding layer 320 and the sensing element 214, and the light-shielding layer 310 and the light-shielding layer 320 include an organic material, such as a black photoresist. The light-shielding layer 330 may be disposed between the light-shielding layer 320 and the microlenses 340, and the light-shielding layer 330 includes a metal material. Since the light-shielding layer 330 includes a metal material and has a thinner thickness than the light-shielding layer 330 including an organic material, the surface profile of the light-shielding layer 330 can be reduced, so that the subsequent process of the microlens 340 can be easily controlled. The light-shielding layer 310, the insulating layer 315, the light-shielding layer 320 and the insulating layer 325 can be formed by a photolithography process, thereby reducing the complexity of the process. In some embodiments, the light collimating structure 300 may further include a protection layer 356 and/or a protection layer 358, the protection layer 356 may be disposed between the light shielding layer 330 and the insulating layer 325, and the protection layer 358 may be disposed between the light shielding layer 330 and the microlenses 340 to improve adhesion between the light shielding layer 330 and the insulating layer 325 and between the light microlenses 340, thereby increasing reliability of the light sensing device SD, wherein the protection layer 356 and the protection layer 358 may include silicon nitride (SiNx), silicon oxide (SiOx), other suitable materials, or a combination thereof, but not limited thereto.

Please refer to fig. 6. Fig. 6 is a partial cross-sectional view of a photo-sensing device according to a fourth embodiment of the invention. In some embodiments, as shown in fig. 6, the light collimating structure 300 of the light sensing device SD may include a light shielding layer 310, an insulating layer 315, a light shielding layer 320, an insulating layer 325, a light shielding layer 330, and a microlens 340. The light-shielding layer 310 may be disposed between the light-shielding layer 320 and the sensing elements 214, and the light-shielding layer 310 includes an organic material, which may include, for example, a black photoresist material, and the light-shielding layer 320 includes a metal material. The light-shielding layer 330 may be disposed between the light-shielding layer 320 and the microlenses 340, and the light-shielding layer 330 includes an organic material. Since the light-shielding layer 320 includes a metal material, it is advantageous in terms of manufacturing process to align the light-shielding layer 310 and the light-shielding layer 320 more accurately. The light-shielding layer 310, the insulating layer 315, the insulating layer 325, the light-shielding layer 330 and the micro-lens 340 can be formed by a photolithography process, thereby reducing the complexity of the process. In some embodiments, the light-collimating structure 300 may further include a protection layer 360 and/or a protection layer 362, the protection layer 360 may be disposed between the light-shielding layer 320 and the insulating layer 315, and the protection layer 362 may be disposed between the light-shielding layer 320 and the insulating layer 325 to improve adhesion between the light-shielding layer 320 and the insulating layer 315 or between the light-shielding layer 320 and the insulating layer 325, so as to increase reliability of the photo sensing device SD, wherein the protection layer 360 and the protection layer 362 may include silicon nitride compound (SiNx), silicon oxide compound (SiOx), other suitable materials, or a combination thereof, but not limited thereto.

Please refer to fig. 7. Fig. 7 is a partial cross-sectional view of a light sensing device according to a variation of the fourth embodiment of the present invention. In some embodiments, as shown in fig. 7, the light collimating structure 300 of the photo sensing device SD may include a light shielding layer 310, an insulating layer 315, a light shielding layer 320, an insulating layer 325, a light shielding layer 330, and a microlens 340. The light-shielding layer 310 may be disposed between the light-shielding layer 320 and the sensing elements 214, and the light-shielding layer 310 includes an organic material, which may include, for example, a black photoresist material, and the light-shielding layer 320 includes a metal material. The light-shielding layer 330 may be disposed on the microlenses 340, and the light-shielding layer 330 includes at least one opening 332 overlapping the opening 312 of the light-shielding layer 310 in the top view direction Y, and the opening 332 may accommodate the microlenses 340. The light-shielding layer 330 may include an organic material. The light-collimating structure 300 may further include a protection layer 360 and/or a protection layer 362, wherein the protection layer 360 may be disposed between the light-shielding layer 320 and the insulating layer 315, and the protection layer 362 may be disposed between the light-shielding layer 320 and the insulating layer 325, and the protection layer 360 and the protection layer 362 may include silicon nitride compound (SiNx), silicon oxide compound (SiOx), other suitable materials, or a combination thereof, but are not limited thereto. In the present embodiment, the microlenses 340 are first disposed on the insulating layer 325, and the light-shielding layer 330 is then disposed on the microlenses 340, so that the microlenses 340 can be disposed on a flat surface, thereby reducing the difficulty of the manufacturing process.

Please refer to fig. 8, fig. 1 and fig. 2. Fig. 8 is a partial cross-sectional view of a photo-sensing device according to an embodiment of the invention. In some embodiments, as shown in fig. 8, fig. 1 and fig. 2, at least one of the light shielding layer 310, the light shielding layer 320 and the light shielding layer 330 of the light sensing device SD may extend outward from a side 220S of the driving circuit 220 by a specific distance. Specifically, when the ambient light (e.g., sunlight) enters the photo sensing device SD, an angle θ is formed between the direction X and the direction X, wherein the direction X may be substantially perpendicular to the top view direction Y of the photo sensing device SD, an edge 320a of the light shielding layer 320 adjacent to the side 220S of the driving circuit 220 may extend outward from the driving circuit 220 by a first extending distance L1, a perpendicular distance between the light shielding layer 320 and the driving circuit 220 in the top view direction Y is a first distance D1, and the first extending distance L1 tan θ is greater than or equal to the first distance D1(L1 tan θ is greater than or equal to D1), so that influence of the ambient light on the photo sensing signal of the photo sensing device SD can be reduced. For example, when the incident light angle θ is 45 degrees (tan45 ° -1), the first extension distance L1 may be greater than or equal to the first distance D1 (i.e., L1 ≧ D1). The first distance D1 may be measured from the top surface of the tft in the driving circuit 220 to the bottom surface of the light shielding layer 320. In some embodiments, at least one of the light-shielding layers 310, 320 and 330 of the light-sensing device SD may extend a distance outward from one side 210S1 (or the side 210S2) of the sensing pixel 210. For example, the edge 320b of the side 210S1 of the light shielding layer 320 adjacent to the sensing pixel 210 may extend outward from the sensing pixel 210 by a second extending distance L2, a vertical distance between the light shielding layer 320 and the sensing element 214 of the sensing pixel 210 in the top view direction Y is a second distance D2, and the second extending distance L2 tan θ is greater than or equal to the second distance D2(L2 tan θ ≧ D2), so as to reduce the influence of ambient light on the optical signal sensed by the optical sensing device SD. For example, when the incident light angle θ is 45 degrees (tan45 ° -1), the second extending distance L2 may be greater than or equal to the second distance D2 (i.e., L2 ≧ D2). The second distance D2 can be measured from the upper surface of the sensing device (not shown in fig. 8) to the lower surface of the light shielding layer 320.

In summary, according to the light sensing device of the embodiment of the invention, the influence of stray light or ambient light can be reduced by the design of the light shielding layer, so as to improve the signal-to-noise ratio of the optical signal, or reduce the complexity of the manufacturing process or improve the adhesion between layers. Furthermore, the light-shielding layer may include an organic material to reduce the generation of stray capacitance between the light-shielding layer and the conductive layer, thereby increasing the sensitivity of the sensing device. In addition, the light-shielding layer may include a metal material, so that the light-shielding layer may be formed with smaller openings or may have a thinner thickness for subsequent processes.

The above description is only an example of the present invention, and is not intended to limit the present invention, and it is obvious to those skilled in the art that various modifications and variations can be made in the present invention. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims (11)

1. A light sensing device, comprising:

the sensing pixel comprises a sensing circuit and a sensing element electrically connected with the sensing circuit;

a driving circuit electrically connected to the sensing circuit; and

a first light shielding layer including at least one first opening corresponding to the sensing element, and overlapping the driving circuit in a top view direction of the light sensing device.

2. The light sensing device as claimed in claim 1, wherein the first light shielding layer comprises an organic material.

3. The light sensing device as claimed in claim 1, further comprising a second light shielding layer including at least one second opening overlapping the at least one first opening in the top view direction.

4. The light sensing device as claimed in claim 3, wherein the first light shielding layer comprises an organic material and the second light shielding layer comprises a metallic material.

5. The light sensing device as claimed in claim 3, wherein the second light shielding layer is disposed between the first light shielding layer and the sensing element.

6. The light sensing device as claimed in claim 3, wherein the first light shielding layer is disposed between the second light shielding layer and the sensing element.

7. The light sensing device as claimed in claim 1, further comprising a micro lens disposed on the first light shielding layer, wherein the micro lens overlaps the at least one first opening in the top view direction.

8. The light sensing device as claimed in claim 7, further comprising a third light shielding layer disposed between the microlens and the first light shielding layer, wherein the third light shielding layer includes at least one third opening overlapping the at least one first opening in the top view direction.

9. The light sensing device as claimed in claim 7, further comprising a third light shielding layer disposed on the microlens and including at least one third opening overlapping the at least one first opening in the top view direction.

10. The light sensing device as claimed in claim 1, wherein an edge of the first light shielding layer adjacent to the driving circuit extends outward from the driving circuit by a first extending distance, a vertical distance between the first light shielding layer and the driving circuit in the top view direction is a first distance, and the first extending distance is greater than or equal to the first distance.

11. The method of claim 1, wherein an edge of the first light shielding layer adjacent to the sensing pixel extends outward from the sensing pixel by a second extending distance, a vertical distance between the first light shielding layer and the sensing element of the sensing pixel in the top view direction is a second distance, and the second extending distance is greater than or equal to the second distance.

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