CN1149706C - Resonators for high power high temp. superconducting devices - Google Patents
Resonators for high power high temp. superconducting devices Download PDFInfo
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- CN1149706C CN1149706C CNB971948682A CN97194868A CN1149706C CN 1149706 C CN1149706 C CN 1149706C CN B971948682 A CNB971948682 A CN B971948682A CN 97194868 A CN97194868 A CN 97194868A CN 1149706 C CN1149706 C CN 1149706C
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- temperature superconductor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P7/00—Resonators of the waveguide type
- H01P7/08—Strip line resonators
- H01P7/082—Microstripline resonators
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P7/00—Resonators of the waveguide type
- H01P7/08—Strip line resonators
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Abstract
TM0i0 mode (i = 1, 2, 3 ...) planar high temperature supercondutor resonators useful in high temperature superconducting filters, filter banks and multiplexers comprise a shaped high temperature superconductor film and a high temperature superconductor ground plate deposited on opposite sides of a dielectric substrate, wherein the shaped high temperature superconductor film has an aperture in the center thereof and has a shape selected from the group consisting of circles and polygons.
Description
Technical field
The present invention relates to the porose TM of the heart therein
0i0Mould (i=1,2,3 ...) circular and polygonal planar high-temperature superconducting resonator.
Background technology
Bank of filters and signal multiplier are widely used in the communications field as the channel device by its frequency separation or combinatorial input signal.The basic chunk of bank of filters and signal multiplier is a filter, and this filter comprises a plurality of resonators as frequency selective element.In order to use in communication, filter needs narrow bandwidth, accurate centre frequency, and the low insertion loss in the frequency band, the height of off band suppresses, on the steep limit of band edge, compact size and high power handling capability.Because so the high loss on conventional conductor is the use that the general filter of being made by conventional conductor is unsuitable for communicating by letter.
High-temperature superconductor (HTS) flat filter has excellent performance under low-power.Referring to Zhi-Yuan Shen, High Temperature Superconducting MicrowaveCircuits, Artech House, Boston, 1994, p.113.Although these HTS flat filters are used for receiver, because its limited power handling capability, so they are not to be well suited for being used for transmitter.In order to use in transmitter, filter must possess the tens of watts of power scopes of application to several hectowatts.Common assigned, in not examining among the application no.08/439402 of submission on May 11 nineteen ninety-five, we have disclosed the TM that can handle transmitting power more than 100 watts
0i0Mould (i=1,2,3 ...) circular and polygon HTS filter, bank of filters and signal multiplier.
Particularly for narrow band filter, the centre frequency precision is another important requirement.This is for the filter in being called " adjacency " multiplier, for example at Zhi-Yuan Shen, and filter that discloses among the supraP.120 and the multipole filters that will cause performance sharply to descend in the loss of centre frequency precision, particularly outstanding.Unfortunately, because the uncontrollable variation in the circuit production sum of errors substrate, for example thickness changes or " bilateral boundary ", so the frequency of the HTS resonator in the filter can the off-design value.Referring to Zhi-Yuan Shen, supra P.12.
Common assigned, in not examining among the application no.08/227437 of submission on April 14th, 1994, we have disclosed " the lamination form " plane HTS filter, in this filter, independent HTS resonator vertically piles up, by hole on the ground plate or groove coupling.But coupling only is created between the adjacent resonators.The filter of some type, for example " oval frequency response " band pass filter just needs " jumps " to be coupled, and that is to say the coupling between the resonator that is separated each other by an intermediate resonator.
Summary of the invention
For overcoming the above-mentioned shortcoming of prior art, the invention provides a kind of TM
0i0Mould planar high-temperature superconducting resonator, wherein, i is 〉=1 integer, in the micro stripline form, this resonator comprises high-temperature superconductor film and at least one high-temperature superconductor ground plate of the setting on the opposite face that is deposited on dielectric substrate; Wherein said setting high-temperature superconductor film has the hole of the setting of the heart therein, the hole of wherein said setting has the shape identical with described high-temperature superconductor film and comprises and be used for the tuning device of wiping the device frequency of shaking after described resonator is by initial the manufacturing, and above-mentioned tuning result makes the resonance frequency increase; Described setting high-temperature superconductor film has a polygonal shape; Wherein said high-temperature superconductor resonator also comprises the second high-temperature superconductor film of locating with one heart with respect to the hole of the setting on the setting high-temperature superconductor center membrane.
According to another aspect of the present invention, provide a kind of TM
0i0Mould planar high-temperature superconducting resonator, wherein, i is 〉=1 integer, in the micro stripline form, this resonator comprises high-temperature superconductor film and at least one high-temperature superconductor ground plate of the setting on the opposite face that is deposited on dielectric substrate; Wherein said setting high-temperature superconductor film has the hole of the setting of the heart therein, and wherein said hole comprises and be used for the tuning device of wiping the device frequency of shaking after above-mentioned resonator is by initial fabrication that above-mentioned tuning result increases resonance frequency; The Kong Youyi of described setting high-temperature superconductor film and described setting octagonal shape.
According to a further aspect of the invention, provide a kind of TM
0i0Mould planar high-temperature superconducting resonator, wherein, i is 〉=1 integer, in the strip line form, this resonator comprises successively:
(a) the first high-temperature superconductor ground plate;
(b) be deposited on first dielectric substrate on described first ground plate;
(c) be deposited on setting high-temperature superconductor film on described first dielectric substrate;
(d) be deposited on second dielectric substrate on the described high-temperature superconductor film; With
(e) be deposited on the second high-temperature superconductor ground plate on described second dielectric substrate;
Wherein, described setting high-temperature superconductor film has the hole of the setting of the heart therein, and have from comprise circular and polygonal group the shape selected, the hole of wherein said setting has the shape identical with described high-temperature superconductor film and comprises and be used for the tuning device of wiping the device frequency of shaking after described resonator is by initial the manufacturing, and described tuning result makes the resonance frequency increase; Wherein said high-temperature superconductor resonator also comprises the second high-temperature superconductor film of locating with one heart with respect to the hole of the setting on the setting high-temperature superconductor center membrane.
According to a further aspect of the invention, provide a kind of TM
0i0Mould planar high-temperature superconducting resonator, wherein, i is 〉=1 integer, in the strip line form, this resonator comprises successively:
(a) the first high-temperature superconductor ground plate;
(b) be deposited on first dielectric substrate on described first ground plate;
(c) be deposited on setting high-temperature superconductor film on described first dielectric substrate;
(d) be deposited on second dielectric substrate on the described high-temperature superconductor film; With
(e) be deposited on the second high-temperature superconductor ground plate on described second dielectric substrate;
Wherein, described setting high-temperature superconductor film has the hole of the setting of the heart therein, and the hole of described setting high-temperature superconductor film and described setting all has octagonal shape, the hole of described setting comprises and is used for the tuning device of wiping the device frequency of shaking after above-mentioned resonator is by initial fabrication that described tuning result increases resonance frequency.
In the embodiment of micro stripline form, resonator comprises monolithic ground plate and monolithic dielectric substrate.In the strip line form, use two substrates of the ground plate that has deposit respectively thereon, setting high-temperature superconductor film is clipped between the substrate, have the resonator of ground plate/substrate/HTS film/substrate/ground plate structure with formation.
Resonator is specially adapted to frequency tuning, that is to say, changes resonant frequency and makes performance the best of filter, and be applicable to the filter that oval frequency response is arranged adjacent being coupled in abutting connection with the jump between the resonator is provided.
Description of drawings
Fig. 1 (a)-1 (b) illustrates TM of the present invention in microstripline configuration
0i0Mould (i=1,2,3 ...) embodiment of planar resonator, wherein, Fig. 1 (a) represents front view, Fig. 1 (b) represents profile.
Fig. 2 (a)-2 (c) represents to work in the TM shown in Fig. 2 (a) respectively
010TM shown in mould, Fig. 2 (b)
020TM shown in mould, Fig. 2 (c)
030The electric current of the resonator of the present invention in the mould and the curve chart of Distribution of Magnetic Field.
Fig. 3 (a)-3 (c) represents to work in the TM shown in Fig. 3 (a) respectively
010TM shown in mould, Fig. 3 (b)
020TM shown in mould, Fig. 3 (c)
030The electric current of the circular resonant device of the typical prior art in the mould and the curve chart of Distribution of Magnetic Field.
Fig. 4 (a)-4 (b) illustrates another embodiment of resonator of the present invention in strip lines configuration, wherein, Fig. 4 (a) expression A-A cut away view, Fig. 4 (b) represents profile.
Fig. 5 (a)-5 (b) illustrates octangle HTS planar resonator of the present invention in microstripline configuration, and wherein, Fig. 5 (a) represents front view, and Fig. 5 (b) represents profile.
Fig. 6 (a)-6 (b) illustrates another embodiment of octangle resonator of the present invention in strip lines configuration, wherein, Fig. 6 (a) expression A-A cut away view, Fig. 6 (b) represents profile.
Fig. 7 (a)-7 (c) illustrates and has TM of the present invention
010The mould resonator is as three utmost point HTS filters of frequency tuning device, and wherein, Fig. 7 (a) represents front view, and Fig. 7 (b) represents profile, and Fig. 7 (c) represents rearview.
Fig. 8 (a)-8 (f) illustrates and has TM of the present invention
010Laminated type three utmost point HTS filters that are used for the jump coupling between the non-adjacent resonator of mould resonator, wherein, Fig. 8 (a) represents cutaway view, Fig. 8 (b), 8 (c), 8 (d), 8 (e) and 8 (f) represent B-B, C-C, D-D, E-E and F-F cut away view respectively.
Fig. 9 (a)-9 (b) illustrates the TM of the present invention that has as the frequency tuning device
010Three utmost point HTS filters of mould resonator, wherein, Fig. 9 (a) represents its front view, Fig. 9 (b) represents its rearview.
Figure 10 represents the HTS filter scattering parameter S under six different transmit power levels with respect to Fig. 9 (a)-9 (b)
21Relation curve with frequency response.
Embodiment
Put it briefly, the present invention includes the plane TM that has circle or polygon HTS film
0i0Mould (wherein i is 〉=1 integer) HTS resonator, this film have the hole that is positioned at the center and at least one ground plate of deposit at least one substrate.The HTS film is circle and octangle preferably.The hole can be as needn't be identical with HTS film shape for circle or polygon.Term used herein " circle " should not be understood that to require desirable circle.On the contrary, also comprise nonideal circle; That is to say, comprise that also the diameter of a circle difference is lower than 1% circle.Similarly, term " polygon " is interpreted as having at least five mutually equilateral and five polygons of isogonism mutually.
With reference to Fig. 1, it schematically represents an embodiment of resonator of the present invention, is included in the circular HTS film 21 and the HTS ground plate 23 that have centre bore 24 on its of deposit on the opposite face of substrate 22.Preferably from have the high-temperature superconductor more than 100 times that inversion temperature is fine copper greater than 80K and conductance, select to be used for the HTS material of HTS film and HTS ground plate.As the HTS material of selecting, preferably select YBa
2Cu
3O
7-δ, Tl
2Ba
2CaCu
2O
8(Tl, Pb) Sr
2Ca
2Cu
3O
9Substrate can be any dielectric substrate commonly used in the HTS device.Preferably adopt loss angle tangent (loss tagent) less than 10
-3Dielectric material.
Below, with reference to Fig. 2, its expression works in TM
010Mould (Fig. 2 (a)), TM
020Mould (Fig. 2 (b)) and TM
030The electric current J of the radial direction in the mould (Fig. 2 (c))
ρWith the magnetic field H φ of circumferencial direction as apart from the curved line relation of resonator radius centered of the present invention apart from the function of ρ.
Known circular plane HTS TM in the prior art
0i0The mould resonator, wherein i is 〉=1 integer.Fig. 3 (a)-3 (c) expression works in the TM shown in Fig. 3 (a), Fig. 3 (b) and Fig. 3 (c) respectively
010Mould, TM
020Mould and TM
030The electric current J of the radial direction in the mould
ρWith the magnetic field H φ of circumferencial direction as the curved line relation of the circular HTS resonator radius centered of distance prior art typical case apart from the function of ρ.By J shown in Figure 2
ρ, H φ and the function relation curve of ρ and function relation curve shown in Figure 3 compare, as can be seen, the resonator (Fig. 2) that has a centre bore has the zone corresponding to the centre bore that does not have the resonator field, and electromagnetic field is limited in the HTS figure.
Fig. 4 (a)-(b) is illustrated in another embodiment of circular resonant device in the strip lines configuration.As shown in the figure, resonator in the present embodiment is included in the circular HTS film 31 that has centre bore 34 on its that sandwiches between substrate 32a, the 32b, and each substrate also comprises HTS ground plate 33a, 33b respectively.
The embodiment of Fig. 5 (a)-(b) expression resonator of the present invention wherein, is deposited with the octangle HTS film 51 and the HTS ground plate 53 that have octangle centre bore 54 on it on the opposite face of substrate 52.
Another embodiment of Fig. 6 (a)-(b) expression resonator of the present invention.In the present embodiment, with the similar strip lines configuration of embodiment shown in Fig. 4 (a) and 4 (b) in, resonator also is included in the octangle HTS film 61 that has octangle hole 64 thereon that sandwiches between two substrate 62a, the 62b, and each substrate 62a, 62b also are deposited with ground plate 63a, 63b respectively thereon.
Fig. 7 represents to be equipped with the TM of resonator of the present invention
010Mould HTS high power three utmost point filters.As shown in Figure 7, three utmost point filters are included in a plurality of HTS film of deposit 72a, 73,72b on the one side and at the substrate 70 (referring to Fig. 7 (b)) of its back side deposit HTS ground plate 71.In the illustrated embodiment, film 72a and 72b represent the circular HTS resonator of prior art, have the film 73 expressions resonator of the present invention of centre bore 74 thereon.
With reference to Fig. 7 (c), the input coupling circuit of filter be included in the ground plate 71 in order to the opening 75a in the place that is provided for all the other coupling circuits, by the input center line 76a of complanar line form and with the branch line 77a of resonator 72a coupling.The output coupling circuit be included on the ground plate 71 opening 75b in order to the place that is provided for all the other coupling circuits, by the output center line 76b of complanar line form and with the branch line 77b of resonator 72b coupling.Internal resonance device coupling circuit is included in two opening 78a on the ground plate 71 and 78b and in order to two the coupling center line 79a and the 79b by the complanar line form of the coupling of resonator 72a to the coupling resonator 73 to resonator 72b of resonator 73 to be provided respectively.
For three utmost point filters, comprise that the resonance frequency of three resonators of filter must accurately equal its design load.In fact, because many uncontrollable factors, resonance frequency can change.Therefore, very expect to have some method of the resonance frequency of tuning single resonator.For example, the radius of the circular HTS resonator of known change prior art changes its frequency, but it is very difficult with the frequency of taking this tuning circular resonant device to make back change radius at it.
In the embodiment of three utmost point filters shown in Figure 7, resonator of the present invention comprises the device of tuned filter resonance frequency.Specifically,, the hole is set, can easily increases the frequency of circular resonant device by center at resonator according to the present invention.Utilize superpower laser, photoetching corrosion or mask etch, can easily finish this hole.
Fig. 8 represents to have another three utmost point TM of the laminated structure that adds resonator of the present invention
0i0Mould (i=1,2,3 ...) the HTS filter.Three utmost point filters are divided into three parts: importation, mid portion and output.
The importation is included in the HTS circuit (referring to Fig. 8 (b)) that sandwiches between substrate 80a (having the ground plate 81a in the one outgrowth) and the substrate 80b.With reference to Fig. 8 (b), the HTS circuit comprises circular HTS resonator 82a and the input coupling circuit 83a that is deposited on the substrate 80b.Mid portion is included in the HTS circuitous pattern shown in Fig. 8 (d) that sandwiches between two substrate 80c, the 80d.The circuitous pattern of the mid portion shown in Fig. 8 (d) is included in its center and has the HTS resonator 84 in hole 85 and the circular HTS hole 86 concentric with hole 85, and is deposited on the resonator 84 on the substrate 80d.Output is included in the HTS circuit (referring to Fig. 8 (f)) that sandwiches between substrate 80f (having the ground plate 81b in the one outgrowth) and the substrate 80e.Shown in Fig. 8 (f), the HTS circuit of output comprises circular HTS resonator 82b and the output coupling circuit 83b that is deposited on the substrate 80f.The HTS ground plate 87a that has center coupling device 88a (referring to Fig. 8 (c)) separates importation and mid portion.The similar ground plate 87b that has center coupling device 88b (referring to Fig. 8 (e)) separates mid portion and output.In this scheme, ground plate 87a has Sharing Function (functionality) between importation and mid portion, and ground plate 87b has Sharing Function between mid portion and output.Coupling device 88a provides coupling between resonator 82a resonator 84, coupling device 88b provides coupling between resonator 84 resonator 82b simultaneously.In addition, as following detailed description, coupling device 88a and the 88b hole 85 in resonator 84 provides coupling between resonator 82a resonator 82b.
Referring again to Fig. 8 (d), the resonator 84 that has circular hole 85 is included in the device that is coupled between the resonator 82a resonator 82b.Because resonator 82a resonator 82b is contiguous mutually, and in fact they are separated by intermediate resonator 84, so be appreciated that this coupling is suitably called " jump " to be coupled.Therefore, the coupling from resonator 82a to resonator 82b needs " skipping " intermediate resonator 84.For the application in the oval frequency response filter that itself has the advantage of brink very, the application of this " jump " of the present invention coupling is useful especially.
As the above stated specification that reference Fig. 2 is done, the TM in the resonator
0i0Mould (i=1,2,3 ...) electromagnetic field be limited in HTS film itself, the electromagnetic field that the centre bore in the resonator is not produced by resonator.Therefore, this " free space " helps being used to be coupled non-adjacent resonator.With reference to the laminated type filter shown in Fig. 8 (a)-8 (f), electromagnetic field is limited in the zone of HTS film 84, centre bore 85 provides the space that does not have electromagnetic field, by the coupling device 88b on coupling device 88a on the ground plate 87a (referring to Fig. 8 (c)) and ground plate 87b (referring to Fig. 8 (e)), this space can be used as the space of carrying out " jump " coupling between resonator 82a and the 82b.Concentric HTS point 86 (referring to Fig. 8 (d)) in hole 85 provides another size, to change the stiffness of coupling between these resonators.In a word, by changing the diameter of coupling device 88a and 88b, hole 85 and HTS point 86, can adjust resonator 82a, 84 and 82b between stiffness of coupling.
Example
By LaAlO at 40.8mm * 17.2mm * 0.508mm
3The two-sided Tl of deposit is gone up on the two sides of substrate (two-stage)
2Ba
2CaCu
2O
8The HTS film, preparation high power three utmost point TM
010Mould HTS filter.Utilize the dual surface lithography of standard to handle and the ion beam grinding, preparation has the filter of structure shown in Fig. 9 (a) and 9 (b), wherein, the 90th, substrate; 91a and 91b are the octangle resonators; The 92nd, have the octangle resonator of centre bore 93 thereon; The 94th, ground plate; The center line 96a of opening 95a, coplane and T type coupling branch line 97a form input coupling circuit jointly; The center line 96b of opening 95b, coplane and T type coupling branch line 97b form the output coupling circuit jointly; Opening 98a and 98b form internal resonance device coupling circuit.
Filter is packed in the copper shell, and this copper shell has the input and output connector of SMA compatibility, and under 77K test filter.By the diameter of centre bore 93 in 24 microns the recruitments increase resonator 92, until obtaining optimum performance.Then, be 1.7 watts, 20 watts, 40 watts, 50 watts, 62 watts and 74 watts of following test filters in power level.Figure 10 is illustrated in the scattering parameter S that measures under these six power levels
21Relation curve with frequency response.As shown in figure 10, even under the accurate vertical scale of 1dB/Div, six curves are positioned at the top of each other, and do not have tangible decreased performance.
Claims (4)
1. TM
0i0Mould planar high-temperature superconducting resonator, wherein, i is 〉=1 integer, in the micro stripline form, this resonator comprises high-temperature superconductor film and at least one high-temperature superconductor ground plate of the setting on the opposite face that is deposited on dielectric substrate; Wherein said setting high-temperature superconductor film has the hole of the setting of the heart therein, the hole of wherein said setting has the shape identical with described high-temperature superconductor film and comprises the device that is used for tuned resonator frequency after described resonator is by initial the manufacturing, and above-mentioned tuning result increases resonance frequency; Described setting high-temperature superconductor film has a polygonal shape; Wherein said high-temperature superconductor resonator also comprises the second high-temperature superconductor film of locating with one heart with respect to the hole of the setting on the setting high-temperature superconductor center membrane.
2. TM
0i0Mould planar high-temperature superconducting resonator, wherein, i is 〉=1 integer, in the micro stripline form, this resonator comprises high-temperature superconductor film and at least one high-temperature superconductor ground plate of the setting on the opposite face that is deposited on dielectric substrate; Wherein said setting high-temperature superconductor film has the hole of the setting of the heart therein, and wherein said hole comprises and being used at above-mentioned resonator by the device of tuned resonator frequency after the initial fabrication that above-mentioned tuning result increases resonance frequency; The Kong Youyi of described setting high-temperature superconductor film and described setting octagonal shape.
3. TM
0i0Mould planar high-temperature superconducting resonator, wherein, i is 〉=1 integer, in the strip line form, this resonator comprises successively:
(a) the first high-temperature superconductor ground plate;
(b) be deposited on first dielectric substrate on described first ground plate;
(c) be deposited on setting high-temperature superconductor film on described first dielectric substrate;
(d) be deposited on second dielectric substrate on the described high-temperature superconductor film; With
(e) be deposited on the second high-temperature superconductor ground plate on described second dielectric substrate;
Wherein, described setting high-temperature superconductor film has the hole of the setting of the heart therein, and have from comprise circular and polygonal group the shape selected, the hole of wherein said setting has the shape identical with described high-temperature superconductor film and comprises the device that is used for tuned resonator frequency after described resonator is by initial the manufacturing, and described tuning result increases resonance frequency; Wherein said high-temperature superconductor resonator also comprises the second high-temperature superconductor film of locating with one heart with respect to the hole of the setting on the setting high-temperature superconductor center membrane.
4. TM
0i0Mould planar high-temperature superconducting resonator, wherein, i is 〉=1 integer, in the strip line form, this resonator comprises successively:
(a) the first high-temperature superconductor ground plate;
(b) be deposited on first dielectric substrate on described first ground plate;
(c) be deposited on setting high-temperature superconductor film on described first dielectric substrate;
(d) be deposited on second dielectric substrate on the described high-temperature superconductor film; With
(e) be deposited on the second high-temperature superconductor ground plate on described second dielectric substrate;
Wherein, described setting high-temperature superconductor film has the hole of the setting of the heart therein, and the hole of described setting high-temperature superconductor film and described setting all has octagonal shape, the hole of described setting comprises and being used at above-mentioned resonator by the device of tuned resonator frequency after the initial fabrication that described tuning result increases resonance frequency.
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US1808896P | 1996-05-22 | 1996-05-22 | |
US60/018,088 | 1996-05-22 | ||
US08/790,971 | 1997-01-30 | ||
US08/790,971 US5914296A (en) | 1997-01-30 | 1997-01-30 | Resonators for high power high temperature superconducting devices |
Publications (2)
Publication Number | Publication Date |
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CN1220031A CN1220031A (en) | 1999-06-16 |
CN1149706C true CN1149706C (en) | 2004-05-12 |
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CNB971948682A Expired - Fee Related CN1149706C (en) | 1996-05-22 | 1997-05-16 | Resonators for high power high temp. superconducting devices |
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EP (1) | EP0900453B1 (en) |
JP (1) | JP2000511375A (en) |
KR (1) | KR20000015929A (en) |
CN (1) | CN1149706C (en) |
AT (1) | ATE205640T1 (en) |
CA (1) | CA2255648A1 (en) |
DE (1) | DE69706673T2 (en) |
DK (1) | DK0900453T3 (en) |
ES (1) | ES2163168T3 (en) |
GR (1) | GR3036898T3 (en) |
HK (1) | HK1019514A1 (en) |
PT (1) | PT900453E (en) |
TW (1) | TW426227U (en) |
WO (1) | WO1997044852A1 (en) |
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DE19821382A1 (en) * | 1998-05-13 | 1999-11-25 | Bosch Gmbh Robert | Method for adjusting the resonance frequency of a ring resonator |
JP5029519B2 (en) | 2008-07-08 | 2012-09-19 | 富士通株式会社 | filter |
CN101728612A (en) * | 2009-12-29 | 2010-06-09 | 中国电子科技集团公司第十六研究所 | C waveband frequency divider |
CN103700919B (en) * | 2014-01-18 | 2016-09-28 | 成都顺为超导科技股份有限公司 | Resonator, resonator are for wave filter, wave filter and resonator design method |
CN108695580B (en) * | 2017-04-10 | 2019-10-18 | 南京理工大学 | A kind of octagonal super wide band microstrip filter based on defect ground structure |
CN110970698B (en) * | 2019-12-20 | 2021-11-05 | 济南腾铭信息科技有限公司 | Superconducting coupling structure |
CN112563700B (en) * | 2020-08-13 | 2022-01-04 | 中国科学院国家天文台 | Submillimeter wave multi-band imaging superconducting band-pass filter array system and implementation method |
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JPS6014503A (en) * | 1983-07-05 | 1985-01-25 | Nec Corp | Triplate-type band-pass filter |
JPS61251203A (en) * | 1985-04-29 | 1986-11-08 | Nec Corp | Tri-plate band-pass filter |
JPH04351103A (en) * | 1991-05-29 | 1992-12-04 | Sumitomo Electric Ind Ltd | Microwave resonator |
JPH05335834A (en) * | 1992-05-29 | 1993-12-17 | Kyocera Corp | Oscillation circuit |
JP3165445B2 (en) * | 1994-06-17 | 2001-05-14 | 松下電器産業株式会社 | High frequency circuit element |
-
1997
- 1997-05-16 JP JP09542608A patent/JP2000511375A/en not_active Ceased
- 1997-05-16 AT AT97926580T patent/ATE205640T1/en not_active IP Right Cessation
- 1997-05-16 CA CA002255648A patent/CA2255648A1/en not_active Abandoned
- 1997-05-16 PT PT97926580T patent/PT900453E/en unknown
- 1997-05-16 DK DK97926580T patent/DK0900453T3/en active
- 1997-05-16 EP EP97926580A patent/EP0900453B1/en not_active Expired - Lifetime
- 1997-05-16 CN CNB971948682A patent/CN1149706C/en not_active Expired - Fee Related
- 1997-05-16 ES ES97926580T patent/ES2163168T3/en not_active Expired - Lifetime
- 1997-05-16 DE DE69706673T patent/DE69706673T2/en not_active Expired - Fee Related
- 1997-05-16 WO PCT/US1997/008411 patent/WO1997044852A1/en not_active Application Discontinuation
- 1997-05-16 KR KR1019980709483A patent/KR20000015929A/en not_active Application Discontinuation
- 1997-05-22 TW TW088203218U patent/TW426227U/en not_active IP Right Cessation
-
1999
- 1999-10-11 HK HK99104477A patent/HK1019514A1/en unknown
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EP0900453A1 (en) | 1999-03-10 |
CN1220031A (en) | 1999-06-16 |
GR3036898T3 (en) | 2002-01-31 |
WO1997044852A1 (en) | 1997-11-27 |
PT900453E (en) | 2002-02-28 |
ATE205640T1 (en) | 2001-09-15 |
DK0900453T3 (en) | 2001-10-29 |
DE69706673T2 (en) | 2002-06-20 |
HK1019514A1 (en) | 2000-02-11 |
TW426227U (en) | 2001-03-11 |
CA2255648A1 (en) | 1997-11-27 |
ES2163168T3 (en) | 2002-01-16 |
JP2000511375A (en) | 2000-08-29 |
DE69706673D1 (en) | 2001-10-18 |
KR20000015929A (en) | 2000-03-15 |
EP0900453B1 (en) | 2001-09-12 |
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