CN114968979A - Database establishment method and device for photothermal reflection coefficient and readable storage medium - Google Patents

Database establishment method and device for photothermal reflection coefficient and readable storage medium Download PDF

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CN114968979A
CN114968979A CN202210535846.XA CN202210535846A CN114968979A CN 114968979 A CN114968979 A CN 114968979A CN 202210535846 A CN202210535846 A CN 202210535846A CN 114968979 A CN114968979 A CN 114968979A
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photothermal
reflection coefficient
light wave
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孙华锐
何阳
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Shenzhen Graduate School Harbin Institute of Technology
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    • G06F16/20—Information retrieval; Database structures therefor; File system structures therefor of structured data, e.g. relational data
    • G06F16/21—Design, administration or maintenance of databases
    • G06F16/211—Schema design and management
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    • G06—COMPUTING; CALCULATING OR COUNTING
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    • G06F16/20—Information retrieval; Database structures therefor; File system structures therefor of structured data, e.g. relational data
    • G06F16/22—Indexing; Data structures therefor; Storage structures
    • G06F16/2228—Indexing structures
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
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Abstract

The application provides a database establishing method and device of a photothermal reflection coefficient and a readable storage medium, and relates to the technical field of microscopic thermal imaging of photothermal reflection principle. The method comprises the following steps: obtaining a plurality of photo-thermal reflection coefficients of a material to be detected under the conditions of different temperatures and different light wave wavelengths; determining a first photothermal reflection coefficient which is larger than a preset threshold value in the plurality of photothermal emission coefficients and a first light wave wavelength corresponding to the first photothermal reflection coefficient; and establishing an incidence relation among parameter information of the material to be detected according to the material to be detected, the first light wave wavelength and the first photothermal reflection coefficient, and storing the incidence relation into a database. The first light wave wavelength and the first photothermal reflection coefficient corresponding to different materials are stored in the database, so that the difficulty in obtaining the light wavelength corresponding to the optimal photothermal reflection coefficient of different materials can be reduced, and technical support is provided for selection of the optimal photothermal reflection coefficient and the light wavelength of different materials and practical application of thermal imaging.

Description

Database establishment method and device for photothermal reflection coefficient and readable storage medium
Technical Field
The application relates to the technical field of micro thermal imaging of a photothermal reflection principle, in particular to a method and a device for establishing a database of photothermal reflection coefficients and a readable storage medium.
Background
In the photothermal reflection microscopic thermal imaging technology, a relatively appropriate optical wavelength needs to be selected for different materials to be detected to obtain a relatively good imaging effect, that is, the higher the photothermal reflection coefficient of the materials to be detected at the optical wavelength is, the better the obtained imaging effect is. The selection of the optimal photothermal reflection coefficient and the wavelength of light for different materials in the prior art is generally obtained by the following two methods: one way is by empirical acquisition; another method is to directly measure/calibrate the Light-heat reflection coefficient of Light-Emitting diodes (LEDs) with different wavelengths by using a reflectivity thermal imaging device, and since the selectable wavelengths of the LEDs are limited, the Light-heat reflection coefficients of different materials with different wavelengths cannot be obtained in a wide spectral range, a systematic and scientific method is urgently needed to obtain the optical wavelength corresponding to the optimal Light-heat reflection coefficient of different materials.
Disclosure of Invention
The embodiment of the application provides a method and a device for establishing a database of photothermal reflection coefficients and a readable storage medium, which can reduce the difficulty of obtaining optical wavelengths corresponding to the optimal photothermal reflection coefficients of different materials, thereby providing technical support for practical application.
In a first aspect, an embodiment of the present application provides a method for creating a database of photothermal reflection coefficients, where the method includes:
obtaining a plurality of photo-thermal reflection coefficients of a material to be detected under the conditions of different temperatures and different light wave wavelengths;
determining a first photothermal reflection coefficient which is larger than a preset threshold value in the plurality of photothermal emission coefficients and a first light wave wavelength corresponding to the first photothermal reflection coefficient;
and establishing an incidence relation among parameter information of the material to be detected according to the material to be detected, the first light wave wavelength and the first photothermal reflection coefficient, and storing the incidence relation into a database.
According to the photo-thermal reflection coefficient database establishing method, after photo-thermal reflection coefficients corresponding to a material to be detected at different temperatures and different light wave wavelengths are obtained, a first photo-thermal reflection coefficient with the photo-thermal reflection coefficient larger than a preset threshold value and a first light wave wavelength corresponding to the first photo-thermal reflection coefficient are determined based on the light wave wavelengths and the photo-thermal reflection coefficients, then an association relation among the material to be detected, the first light wave wavelength and the first photo-thermal reflection coefficient is established, and the association relation is stored in a database. According to the method, the first light wave wavelength and the first photothermal reflection coefficient corresponding to different materials can be stored in the database, the difficulty of obtaining the optimal photothermal reflection coefficient and the light wavelength of different materials can be reduced, according to practical application, the optimal photothermal reflection coefficient can be the photothermal reflection coefficient with the largest absolute value, and technical support is provided for selection of the optimal photothermal reflection coefficient and the corresponding light wavelength of different materials in photothermal reflection imaging technology and practical application of photothermal reflection imaging.
In one possible embodiment of the first aspect, the obtaining of the photothermal reflection coefficient at the target temperature variation includes:
acquiring an optical constant of a material to be detected under a preset light wave wavelength condition;
determining the reflectivity of the light source corresponding to the preset light wave when the light source normally enters the material to be measured according to the optical constant;
and determining the photothermal reflection coefficient under the target temperature variation according to the reflectivity.
In a possible implementation manner of the first aspect, the data items in the database include: the name of the material to be measured, the first light wave wavelength and the first photo-thermal reflection coefficient.
In one possible implementation of the first aspect, the material to be tested is a semiconductor material.
In a second aspect, an embodiment of the present application provides an apparatus for creating a database of photothermal reflection coefficients, the apparatus including:
the acquisition unit is used for acquiring a plurality of photo-thermal reflection coefficients of the material to be detected under the conditions of different temperatures and different light wave wavelengths;
a determining unit for determining a first photothermal reflection coefficient greater than a preset threshold value among the plurality of photothermal emission coefficients, and a first light wave wavelength corresponding to the first photothermal reflection coefficient;
and the storage unit is used for establishing an incidence relation among the parameter information of the material to be detected according to the material to be detected, the first light wave wavelength and the first photothermal reflection coefficient, and storing the incidence relation into a database.
In one possible embodiment of the second aspect, the obtaining of the photothermal reflection coefficient at the target temperature variation includes:
acquiring an optical constant of a material to be detected under a preset light wave wavelength condition;
determining the reflectivity of the light source corresponding to the preset light wave when the light source normally enters the material to be measured according to the optical constant;
and determining the photothermal reflection coefficient under the target temperature variation according to the reflectivity.
In one possible embodiment of the second aspect, the data items in the database include: the name of the material to be measured, the first light wave wavelength and the first photo-thermal reflection coefficient.
In one possible embodiment of the second aspect, the material to be tested is a semiconductor material.
In a third aspect, an embodiment of the present application provides a terminal device, which includes a memory, a processor, and a computer program stored in the memory and executable on the processor, and when the processor executes the computer program, the method according to any one of the first aspect is implemented.
In a fourth aspect, the present application provides a computer-readable storage medium, which stores a computer program, and when executed by a processor, the computer program implements the method according to any one of the above first aspects.
In a fifth aspect, an embodiment of the present application provides a computer program product, which, when run on a terminal device, causes the terminal device to execute the method described in any one of the above first aspects.
It is understood that the beneficial effects of the second aspect to the fifth aspect can be referred to the related description of the first aspect, and are not described herein again.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed to be used in the embodiments or the prior art descriptions will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without inventive exercise.
Fig. 1 is a schematic flowchart of a database building method for photothermal reflection coefficients according to an embodiment of the present disclosure;
FIG. 2 is a graph showing the relationship between reflectance and wavelength of light at different temperatures according to one embodiment of the present disclosure;
FIG. 3 is a graph illustrating photo-thermal reflectance of gallium nitride (GaN) material according to an embodiment of the present disclosure;
fig. 4 is a schematic structural diagram of an apparatus for creating a database of photothermal reflection coefficients according to an embodiment of the present application;
fig. 5 is a schematic structural diagram of a terminal device according to an embodiment of the present application.
Detailed Description
In the following description, for purposes of explanation and not limitation, specific details are set forth, such as particular system structures, techniques, etc. in order to provide a thorough understanding of the embodiments of the present application. It will be apparent, however, to one skilled in the art that the present application may be practiced in other embodiments that depart from these specific details. In other instances, detailed descriptions of well-known systems, devices, circuits, and methods are omitted so as not to obscure the description of the present application with unnecessary detail.
In the photothermal reflection imaging technology, a more appropriate optical wavelength needs to be selected for different materials to be detected to obtain a better imaging effect, that is, the higher the photothermal reflection coefficient of the material to be detected at the optical wavelength is, the better the obtained imaging effect is. The selection of the optimal photothermal reflection coefficient and the wavelength of light for different materials in the prior art is generally obtained by the following two methods: one way is by empirical acquisition; another method is to directly measure/calibrate the Light-heat reflection coefficient of Light-Emitting diodes (LEDs) with different wavelengths by using a reflectivity thermal imaging device, and because the available wavelength of the LEDs is limited, the Light-heat reflection coefficient of different materials with different wavelengths in a wide spectral range cannot be obtained.
For example, in the photothermal reflection imaging apparatus of Microtherm and Nanotherm series developed by Microsanj recently, an LED light source with a wavelength of 530nm is selected as an optimal light source for a gold (Au) material, and a light source with a wavelength of 365nm is selected as an optimal light source for a gallium nitride (GaN) material, so that a better photothermal reflection coefficient is obtained for the gold (Au) material and the gallium nitride (GaN) material, and a better imaging effect is obtained, and a light source corresponding to an exact wavelength of light is not provided as an optimal light source for other materials, so that a better imaging effect is obtained.
Therefore, a more systematic and scientific method is needed to obtain the light wavelength corresponding to the optimal photothermal reflectance of different materials.
In order to solve the foregoing technical problems, embodiments of the present application provide a method for creating a database of photothermal reflection coefficients, and according to the method, first optical wavelength and first photothermal reflection coefficient corresponding to different materials can be stored in the database, so that difficulty in obtaining optimal photothermal reflection coefficients and optical wavelengths of different materials can be reduced, and technical support is provided for selection of optimal photothermal reflection coefficients and optical wavelengths of different materials in photothermal reflection imaging technology and practical application of thermal imaging.
The technical scheme of the application is described in detail in the following with reference to the accompanying drawings. The embodiments described below with reference to the accompanying drawings are illustrative and intended to explain the present application and should not be construed as limiting the present application.
The application provides a database establishment method of a photothermal reflection coefficient, which comprises the following steps:
s101, acquiring a plurality of photo-thermal reflection coefficients of the material to be detected under the conditions of different temperatures and different light wave wavelengths.
It is understood that the material to be measured may be a semiconductor material, for example, gold (Au) or gallium nitride (GaN).
In the embodiment of the present application, the method for obtaining the photothermal reflection coefficient at the target temperature variation includes: acquiring an optical constant of a material to be detected under a preset light wave wavelength condition; determining the reflectivity of the light source corresponding to the preset light wave when the light source normally enters the material to be measured according to the optical constant; and determining the photothermal reflection coefficient under the target temperature variation according to the reflectivity.
In one possible embodiment, the optical constants of the material to be measured can be obtained by a preset measuring instrument, which may be, for example, an ellipsometer.
Illustratively, at a first temperature T 1 Next, an ellipsometer is used to measure the optical constant n of the material a under test at a set continuous spectrum wavelength 1 And k 1 (i.e. the first temperature T) 1 Lower, optical constant n 1 And k 1 As a function of wavelength), at a first temperature T can be obtained using the following equation (1) 1 When the light source is normally incident on the material A to be measured, the corresponding reflectivity R 1 Variation with wavelength relationship:
Figure BDA0003648186180000051
a first temperature T 1 Change to the second temperature T 2 Obtaining the material A to be measured at the second temperature T according to the formula (1) 2 The corresponding reflectivity R when the corresponding light source is normally incident on the material A to be measured 2 Then, it is determined that the material A to be measured is based on the first temperature T according to the following formula (2) 1 And a second temperature T 2 Photothermal reflection coefficient C th ：
Figure BDA0003648186180000052
It should be understood that in the above formula (2), R 1 Is indicated at a first temperature T 1 Under the condition, the corresponding light source normally irradiates the corresponding reflectivity of the material A to be detected; r 2 Is indicated at a second temperature T 2 Under the condition that the corresponding light source is normally incident on the material A to be measuredThe corresponding reflectivity. As will be readily understood, with respect to R 2 In the sense that R 1 Also represents R 2 The reference reflectivity of (a).
According to equation (1), at a first temperature T 1 Under the unchanged condition, measuring the optical constant n of the material A to be measured under continuous spectrums (namely different light wave wavelengths) by utilizing an ellipsometer 1 And k 1 I.e. the first temperature T 1 Lower, optical constant n 1 And k 1 As a function of the wavelength, the first temperature T can be obtained by using the following formula (1) 1 When the light source is normally incident on the material A to be measured, the corresponding reflectivity R 1 The variation relationship under continuous spectrum; sequentially adjusting the first temperature T according to the above formula (2) 1 To T 2 、T 3 、T 4 … …, a schematic diagram of the change relationship of the reflectivity of the material a to be measured under continuous spectrum at different temperatures can be obtained, see fig. 2, in fig. 2, the abscissa represents the wavelength, the ordinate represents the reflectivity, and different lines represent the relationship between the reflectivity of the material a to be measured and the continuous spectrum at different temperatures.
It should be noted that, as shown in fig. 2, under the condition that the wavelength is kept unchanged in the abscissa, the reflectivities respectively corresponding to the material a to be measured under different temperature conditions can be obtained, and the obtained reflectivities respectively corresponding to the plurality of temperature values are used to obtain the corresponding photothermal reflection coefficient according to the above formula (2).
S102, determining a first photothermal reflection coefficient which is larger than a preset threshold value in the plurality of photothermal reflection coefficients and a first light wave wavelength corresponding to the first photothermal reflection coefficient.
It is understood that the first light wavelength is a light wavelength corresponding to a first photothermal reflectance; the first photothermal reflection coefficient is a photothermal reflection coefficient of which the photothermal reflection coefficient is greater than a preset threshold value, wherein the preset threshold value can be determined according to actual application requirements, and the application does not limit the preset threshold value.
Of course, in the reflective thermal imaging technique, in order to improve the imaging quality, in the embodiment of the present application, the first photothermal reflectance may be a photothermal reflectance having the largest absolute value among the plurality of photothermal reflectance, that is, the optimal photothermal reflectance hereinafter.
In practical applications, in order to facilitate direct application to a thermal imaging technology to obtain a best imaging effect, the first light-heat reflection coefficient may be an optimal light-heat reflection coefficient corresponding to the material to be measured, so that the first light wavelength is a light wavelength corresponding to the optimal light-heat reflection coefficient.
In a possible embodiment, when obtaining the corresponding relationship between the reflectivity and the wavelength of light corresponding to the same material at different temperatures, the wavelength with the most obvious reflectivity variation with temperature may be selected as the first wavelength of light, and the photothermal reflection coefficient corresponding to the first wavelength of light may be selected as the first photothermal reflection coefficient.
As an example and not by way of limitation, assuming that the material a to be measured is gallium nitride (GaN), photo-thermal reflection coefficients of the gallium nitride (GaN) corresponding to different optical wavelengths at different temperatures can be obtained, see fig. 3 for a schematic diagram illustrating a relationship between the photo-thermal reflection coefficient and the wavelength of the gallium nitride (GaN) material provided in the embodiment of the present application, see fig. 3, a wavelength with the most obvious reflectivity change with temperature is selected as a wavelength corresponding to the optimal photo-thermal reflection coefficient of the gallium nitride (GaN) material, for example, 365nm is selected as a wavelength corresponding to the optimal photo-thermal reflection coefficient of the gallium nitride (GaN) material when the reflectivity change with temperature is the most obvious in the wavelength corresponding to 365nm in fig. 3.
S103, establishing an incidence relation among parameter information of the material to be detected according to the material to be detected, the first light wave wavelength and the first photothermal reflection coefficient, and storing the incidence relation into a database.
Based on the above example, a correlation relationship is established among a gallium nitride (GaN) material, a wavelength 365nm corresponding to an optimal photothermal reflectance corresponding to the gallium nitride (GaN) material, and the optimal photothermal reflectance, and is stored in a database, so as to provide technical guidance for practical application.
Of course, in order to reduce the burden of scientific research of related personnel in practical application and provide richer reference data, alternatively, a plurality of groups of different materials with different temperature and light wave wavelength photothermal reflection coefficients and/or emission coefficients can be stored in the database, and the application does not limit the data items stored in the database and the number of the groups of the different materials.
In one possible implementation, the data items in the database include: the name of the material to be measured, the first light wave wavelength and the first photo-thermal reflection coefficient. For example, the correlation stored in the database includes the name of the material to be measured, gallium nitride (GaN), the first light wavelength of 365nm and the first photothermal reflectance of 1.4 × 10 -4 K -1 。
It should be understood that the first photothermal reflection coefficient stored in the data item of the database may be a specific value or a value range, and the application is not limited thereto.
According to the photothermal reflection coefficient-based database establishing method, after the photothermal reflection coefficients of the material to be detected corresponding to different light wave wavelengths at different temperatures are obtained, according to the temperature, the light wave wavelengths and the photothermal reflection coefficients, a first photothermal reflection coefficient with the photothermal reflection coefficient larger than a preset threshold value and a first light wave wavelength corresponding to the first photothermal reflection coefficient are determined, and then the association relation among the material to be detected, the first light wave wavelength and the first photothermal reflection coefficient is established and stored in the database. According to the method, the first light wave wavelength and the first photothermal reflection coefficient corresponding to different materials can be stored in the database, the difficulty in obtaining the optimal photothermal reflection coefficient and the light wavelength of different materials can be reduced, and technical support is provided for selection of the optimal photothermal reflection coefficient and the light wavelength of different materials in the photothermal reflection imaging technology and practical application of thermal imaging.
In addition, the method provided by the embodiment of the application can be used for realizing the temperature measurement function of the chip external interface, so that the ratio of the temperature difference between the two ends of the chip to the power of a heat source can be conveniently obtained when heat is transmitted on the chip, and guidance is provided for the thermal management optimization of a chip device.
In the embodiments provided in the present application, it should be understood that the disclosed apparatus/electronic device and method may be implemented in other ways. For example, the above-described apparatus/electronic device embodiments are merely illustrative, and for example, a module or a unit may be divided into only one logic function, and may be implemented in other ways, for example, a plurality of units or components may be combined or integrated into another system, or some features may be omitted or not executed. The specific content of each unit implementation may refer to the specific description in the other embodiments described above, and is not described herein again.
The units described as separate parts may or may not be physically separate, and parts displayed as units may or may not be physical units, may be located in one place, or may be distributed on a plurality of network units. Some or all of the units can be selected according to actual needs to achieve the purpose of the solution of the embodiment.
Based on the same inventive concept, the embodiment of the present application provides a database building apparatus 200 for photothermal reflection coefficient, and referring to fig. 4, the database building apparatus 200 for photothermal reflection coefficient includes:
an obtaining unit 201, configured to obtain multiple photothermal reflection coefficients of a material to be measured at different temperatures and different wavelengths of light;
a determining unit 202 configured to determine a first photothermal reflection coefficient greater than a preset threshold among the plurality of photothermal emission coefficients, and a first light wave wavelength corresponding to the first photothermal reflection coefficient;
the storage unit 203 is configured to establish an association relationship among parameter information of the material to be measured according to the material to be measured, the first light wavelength, and the first photothermal reflection coefficient, and store the association relationship in a database.
In one possible embodiment, the method for obtaining the photothermal reflection coefficient at the target temperature variation includes:
acquiring an optical constant of a material to be detected under a preset light wave wavelength condition;
determining the reflectivity of the light source corresponding to the preset light wave when the light source normally enters the material to be measured according to the optical constant;
and determining the photothermal reflection coefficient under the target temperature variation according to the reflectivity.
In one possible embodiment, the data items in the database include: the name of the material to be measured, the first light wave wavelength and the first photo-thermal reflection coefficient.
In one possible embodiment, the material to be measured is a semiconductor material.
The embodiment of the application also provides the terminal equipment. As shown in fig. 5, the terminal device 300 includes: at least one processor 301, a memory 302, and a computer program 303 stored in the memory 302 and executable on the at least one processor 301, wherein the processor 301 executes the computer program 303 to implement the photothermal reflection coefficient-based database building method provided herein.
Illustratively, the computer program 303 may be partitioned into one or more modules/units that are stored in the memory 302 and executed by the processor 301 to accomplish the present application. The one or more modules/units may be a series of computer program instruction segments capable of performing certain functions, which are used to describe the execution of the computer program in the terminal device.
Those skilled in the art will appreciate that fig. 5 is only an example of a terminal device, and does not constitute a limitation of the terminal device, and may include more or less components than those shown, or combine some components, or different components, for example, the terminal device 300 may further include an input-output device, a network access device, a bus, etc.
The Processor 301 may be a Central Processing Unit (CPU), other general purpose Processor, a Digital Signal Processor (DSP), an Application Specific Integrated Circuit (ASIC), a Field Programmable Gate Array (FPGA) or other Programmable logic device, discrete Gate or transistor logic device, discrete hardware component, or the like. A general purpose processor may be a microprocessor or the processor may be any conventional processor or the like.
The memory 302 may be an internal storage unit of the terminal device, such as a hard disk or a memory of the terminal device. The memory 302 may also be an external storage device of the terminal device, such as a plug-in hard disk, a Smart Media Card (SMC), a Secure Digital (SD) Card, a Flash memory Card (Flash Card), and the like, which are provided on the terminal device. Further, the memory 302 may also include both an internal storage unit and an external storage device of the terminal device. The memory 302 is used for storing the computer programs and other programs and data required by the terminal device. The memory 302 may also be used to temporarily store data that has been output or is to be output.
The terminal device provided in this embodiment may execute the method embodiments, and the implementation principle and the technical effect are similar, which are not described herein again.
The embodiments of the present application also provide a computer-readable storage medium, where a computer program is stored, and when the computer program is executed by a processor, the steps in the above-mentioned method embodiments can be implemented.
The embodiments of the present application provide a computer program product, which, when running on an electronic device, enables a terminal device to implement the steps in the above method embodiments when executed.
The integrated unit, if implemented in the form of a software functional unit and sold or used as a stand-alone product, may be stored in a computer readable storage medium. Based on such understanding, all or part of the processes in the above method embodiments may be implemented by a computer program, which may be stored in a computer readable storage medium and used by a processor to implement the steps of the above method embodiments. Wherein the computer program comprises computer program code, which may be in the form of source code, object code, an executable file or some intermediate form, etc. The computer readable medium may include at least: any entity or apparatus capable of carrying computer program code to a photographing apparatus/terminal device, a recording medium, computer Memory, ROM (Read-Only Memory), RAM (Random Access Memory), CD-ROM (Compact Disc Read-Only Memory), magnetic tape, floppy disk, optical data storage device, etc. The computer-readable storage medium referred to herein may be a non-volatile storage medium, in other words, a non-transitory storage medium.
In the above embodiments, the descriptions of the respective embodiments have respective emphasis, and reference may be made to the related descriptions of other embodiments for parts that are not described or illustrated in a certain embodiment.
Those of ordinary skill in the art will appreciate that the various illustrative elements and algorithm steps described in connection with the embodiments disclosed herein may be implemented as electronic hardware or combinations of computer software and electronic hardware. Whether such functionality is implemented as hardware or software depends upon the particular application and design constraints imposed on the implementation. Skilled artisans may implement the described functionality in varying ways for each particular application, but such implementation decisions should not be interpreted as causing a departure from the scope of the present application.
In the embodiments provided in the present application, it should be understood that the disclosed apparatus/device and method may be implemented in other ways. For example, the above-described apparatus/device embodiments are merely illustrative, and for example, the division of the modules or units is only one logical division, and there may be other divisions when actually implemented, for example, a plurality of units or components may be combined or may be integrated into another system, or some features may be omitted, or not executed. In addition, the shown or discussed mutual coupling or direct coupling or communication connection may be an indirect coupling or communication connection through some interfaces, devices or units, and may be in an electrical, mechanical or other form.
It will be understood that the terms "comprises" and/or "comprising," when used in this specification and the appended claims, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof.
It should also be understood that the term "and/or" as used in this specification and the appended claims refers to and includes any and all possible combinations of one or more of the associated listed items.
As used in this specification and the appended claims, the term "if" may be interpreted contextually as "when", "upon" or "in response to" determining "or" in response to detecting ". Similarly, the phrase "if it is determined" or "if a [ described condition or event ] is detected" may be interpreted contextually to mean "upon determining" or "in response to determining" or "upon detecting [ described condition or event ]" or "in response to detecting [ described condition or event ]".
Furthermore, in the description of the present application and the appended claims, the terms "first," "second," "third," and the like are used for distinguishing between descriptions and not necessarily for describing or implying relative importance.
Reference throughout this specification to "one embodiment" or "some embodiments," or the like, means that a particular feature, structure, or characteristic described in connection with the embodiment is included in one or more embodiments of the present application. Thus, appearances of the phrases "in one embodiment," "in some embodiments," "in other embodiments," or the like, in various places throughout this specification are not necessarily all referring to the same embodiment, but rather mean "one or more but not all embodiments" unless specifically stated otherwise. The terms "comprising," "including," "having," and variations thereof mean "including, but not limited to," unless expressly specified otherwise.
Finally, it should be noted that: the above embodiments are only used for illustrating the technical solutions of the present application, and not for limiting the same; although the present application has been described in detail with reference to the foregoing embodiments, it should be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; and the modifications or the substitutions do not make the essence of the corresponding technical solutions depart from the scope of the technical solutions of the embodiments of the present application.

Claims (10)

1. A database building method for photo-thermal reflection coefficients is characterized by comprising the following steps:
obtaining a plurality of photo-thermal reflection coefficients of a material to be detected under the conditions of different temperatures and different light wave wavelengths;
determining a first photothermal reflection coefficient of the plurality of photothermal emission coefficients, which is greater than a preset threshold value, and a first light wave wavelength corresponding to the first photothermal reflection coefficient;
and establishing an association relation among parameter information of the material to be detected according to the material to be detected, the first light wave wavelength and the first photothermal reflection coefficient, and storing the association relation into a database.
2. The method of claim 1, wherein the obtaining of the photothermal reflectance at the target temperature change amount comprises:
acquiring an optical constant of a material to be detected under a preset light wave wavelength condition;
determining the reflectivity of the light source corresponding to the preset light wave when the light source normally enters the material to be detected according to the optical constant;
and determining the photo-thermal reflection coefficient under the target temperature variation according to the reflectivity.
3. The method of claim 1, wherein the data items in the database comprise: the name of the material to be detected, the first light wave wavelength and the first photothermal reflection coefficient.
4. A method according to any of claims 1-3, characterized in that the material to be tested is a semiconductor material.
5. An apparatus for database building of photothermal reflection coefficients, the apparatus comprising:
the acquisition unit is used for acquiring a plurality of photo-thermal reflection coefficients of the material to be detected under the conditions of different temperatures and different light wave wavelengths;
a determining unit configured to determine a first photothermal reflection coefficient greater than a preset threshold value among the plurality of photothermal emission coefficients, and a first light wave wavelength corresponding to the first photothermal reflection coefficient;
and the storage unit is used for establishing an incidence relation among the parameter information of the material to be detected according to the material to be detected, the first light wave wavelength and the first photothermal reflection coefficient, and storing the incidence relation into a database.
6. The apparatus of claim 5, wherein the obtaining of the plurality of photothermal reflection coefficients of the material to be measured under different temperature and different wavelength of light comprises:
acquiring optical constants and reflectivity of a material to be detected under the conditions of different temperatures and different light wave wavelengths;
and determining the photothermal reflection coefficient.
7. The apparatus of claim 5, wherein the data items in the database comprise: the name of the material to be detected, the first light wave wavelength and the first photothermal reflection coefficient.
8. The device according to any one of claims 5 to 7, wherein the material to be tested is a semiconductor material.
9. A terminal device comprising a memory, a processor and a computer program stored in the memory and executable on the processor, characterized in that the processor implements the method according to any of claims 1 to 4 when executing the computer program.
10. A computer-readable storage medium, in which a computer program is stored which, when being executed by a processor, carries out the method according to any one of claims 1 to 4.
CN202210535846.XA 2022-05-17 2022-05-17 Database establishment method and device for photothermal reflection coefficient and readable storage medium Pending CN114968979A (en)

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