CN114964013A - Terahertz film thickness measuring device and electronic equipment - Google Patents
Terahertz film thickness measuring device and electronic equipment Download PDFInfo
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- CN114964013A CN114964013A CN202210564534.1A CN202210564534A CN114964013A CN 114964013 A CN114964013 A CN 114964013A CN 202210564534 A CN202210564534 A CN 202210564534A CN 114964013 A CN114964013 A CN 114964013A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
- G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
- G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
- G01B11/0625—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating with measurement of absorption or reflection
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Abstract
The invention provides a terahertz film thickness measuring device and electronic equipment, belongs to the technical field of terahertz equipment, and solves the problem that the existing terahertz film thickness measuring instrument cannot accurately acquire position data of a measured coating film. Terahertz film thickness measuring device includes: the device comprises a spectrometer host, a terahertz probe and a position detection mechanism; the terahertz probe is in communication connection with the spectrometer host, and is fixed at the front end of the spectrometer host; a terahertz window sheet is arranged at the front end of the terahertz probe, a terahertz exit window is arranged on the terahertz window sheet, and a position detection mechanism is arranged on the terahertz window sheet; the position detection mechanism comprises a laser device, a PSD position detector, a lens and an ADC conversion chip; the laser equipment is arranged around the terahertz emergent window, the PSD position detector is arranged on the terahertz window sheet, and the lens is arranged in front of the PSD position detector; the position detection mechanism emits red light through the laser device, and the red light reaches the film layer to form laser spots.
Description
Technical Field
The invention relates to the technical field of terahertz equipment, in particular to a terahertz film thickness measuring device and electronic equipment.
Background
The film coating is an indispensable process step in the industries of automobiles, ships, aviation manufacturing and the like. In the coating production process, a paint system is generally a multilayer structure comprising a primer, a middle coat, a colored paint and a varnish, the spraying process is complicated, and the monitoring process is complex. The thickness of the coating film is one of the most important control factors of the coating quality, and the performances of corrosion prevention, rust prevention, attractiveness and the like of the product can be directly influenced. With the rapid development of coating technology and modern industry, the industrialization degree is continuously improved, and the control of the coating quality has higher requirements and more demands. The traditional coating thickness measuring technology comprises a magnetic induction thickness measuring method, an eddy current thickness measuring method, an ultrasonic thickness measuring method, a ray thickness measuring method and the like. The traditional coating thickness measuring technology has some defects in practical application, such as radiancy, incapability of identifying the single-layer thickness of a plurality of coatings, incapability of identifying the coating defects in a non-contact manner, incapability of realizing real-time rapid online detection and the like. The terahertz thickness measurement technology can complete non-contact nondestructive testing, is safe to human bodies without radiation, and has obvious advantages compared with the traditional coating thickness measurement technology.
In the terahertz thickness measurement process, the distance and the position relation between the measuring instrument and the film to be measured influence the thickness measurement result, so that the distance and the deflection angle data between the measuring instrument and the film to be measured need to be acquired in the thickness measurement process. However, currently, there is a deviation in obtaining the distance and deflection angle data, which may cause the film thickness measurement data to be inaccurate.
Therefore, the conventional terahertz film thickness measuring instrument cannot accurately acquire the position data of the film to be measured.
Disclosure of Invention
The invention aims to provide a terahertz film thickness measuring device and electronic equipment, which are used for solving the problem that the existing terahertz film thickness measuring instrument cannot accurately acquire the data of a measured coating position.
In a first aspect, the present invention provides a terahertz film thickness measuring apparatus, including: the device comprises a spectrometer host, a terahertz probe and a position detection mechanism;
the terahertz probe is in communication connection with the spectrometer host, and is fixed at the front end of the spectrometer host;
a terahertz window sheet is arranged at the front end of the terahertz probe, a terahertz exit window is arranged on the terahertz window sheet, and the position detection mechanism is arranged on the terahertz window sheet;
the position detection mechanism comprises a laser device, a PSD position detector, a lens and an ADC conversion chip;
the laser equipment is arranged on the periphery of the terahertz emergent window, the PSD position detector is arranged on the terahertz window sheet, and the lens is arranged in front of the PSD position detector;
the main spectrometer machine generates a terahertz signal, the terahertz signal is transmitted to a film layer to be detected through the terahertz probe, the terahertz signal is reflected by the film layer and then received by the terahertz probe, and the main spectrometer machine collects and processes the terahertz reflection signal; the position detection mechanism emits red light through a laser device, the red light reaches the position of the film layer to form a laser spot, the PSD position detector collects signals of the laser spot through the lens and transmits the signals of the laser spot to the ADC conversion chip to perform photoelectric signal conversion, and position data of the film layer are obtained.
Further, the PSD position detector is a two-dimensional PSD;
the target surface size of the two-dimensional PSD is 7 x 7 mm;
the two-dimensional PSD is located right below the terahertz emergent window and fixed with the terahertz window sheet.
Furthermore, the PSD position detectors are two one-dimensional PSDs;
the two one-dimensional PSDs are respectively positioned right below and on the right side of the terahertz emergent window and are fixed with the terahertz window sheet.
Further, the laser device comprises four red lasers;
the four red lasers are respectively arranged above, below, on the left side and on the right side of the terahertz emergent window.
Further, the focal length of the lens is 16mm, and the optical size of the lens is 2/3 inches.
Further, the ADC conversion chip is a 4-channel ADC conversion chip.
Furthermore, the spectrometer host is provided with a femtosecond laser, an optical fiber beam splitter, an optical fiber collimator, an optical delay line, a pyramid mirror and a mobile unit thereof, a compensation optical fiber, a driver, an amplifier of a time domain electric signal, a digital-to-analog converter and a central controller.
Furthermore, a terahertz transmitting antenna, a terahertz collimating lens, a terahertz reflecting beam splitter, a terahertz converging lens, a terahertz receiving antenna and a preamplifier are arranged on the terahertz probe.
In a second aspect, the invention further provides an electronic device, which includes a mechanical arm, a control computer and the terahertz film thickness measuring apparatus provided in the first aspect;
the control computer is electrically connected with the mechanical arm, and the terahertz film thickness measuring device is fixed on the mechanical arm;
the control computer is in communication connection with the terahertz film thickness measuring device;
the control computer controls the relative position of the terahertz film thickness measuring device and the measured film layer by controlling the operation of the mechanical arm, and the control computer is also used for receiving the measured data and processing the measured data to obtain a measured thickness value.
The invention provides a terahertz film thickness measuring device, which comprises: the device comprises a spectrometer host, a terahertz probe and a position detection mechanism; the terahertz probe is in communication connection with the spectrometer host, and is fixed at the front end of the spectrometer host; a terahertz window sheet is arranged at the front end of the terahertz probe, a terahertz exit window is arranged on the terahertz window sheet, and a position detection mechanism is arranged on the terahertz window sheet; the position detection mechanism comprises a laser device, a PSD position detector, a lens and an ADC conversion chip; the laser equipment is arranged on the periphery of the terahertz emergent window, the PSD position detector is arranged on the terahertz window sheet, and the lens is arranged in front of the PSD position detector; the main spectrometer machine generates a terahertz signal, the terahertz signal is transmitted to a film layer to be detected through a terahertz probe, the terahertz signal is reflected by the film layer and then is received by the terahertz probe, and the main spectrometer machine collects and processes the terahertz reflection signal; the position detection mechanism emits red light through the laser device, the red light reaches the position of the film layer to form a laser spot, the PSD position detector collects optical signals of the laser spot through the lens and transmits the optical signals of the laser spot to the ADC conversion chip to perform photoelectric signal conversion, and position data of the film layer is obtained.
By adopting the terahertz film thickness measuring device provided by the invention, the plurality of lasers are uniformly arranged around the terahertz emergent window, so that the image of the laser spot is just on the diagonal line of the PSD position detector, the requirement of the position detection range of the image point at each distance is met, the PSD position detector collects the image of the laser spot through the lens, namely the laser signal is collected, and the ADC conversion chip carries out photoelectric signal conversion on the laser signal, so that the position data of the measured film layer relative to the measuring device is obtained, wherein the position data comprises distance and deflection angle data. Through setting up PSD position detector, strengthened the position detection precision to being surveyed the rete to avoided prior art to have the problem of error when obtaining distance and declination data between measuring device and the rete being surveyed, and then also promoted the precision to thick measured data of membrane.
Correspondingly, the electronic equipment provided by the invention also has the technical effects.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and other drawings can be obtained by those skilled in the art without creative efforts.
FIG. 1 is a schematic view of a terahertz film thickness measuring apparatus according to an embodiment of the present invention;
FIG. 2 is a schematic view of a position detection mechanism in an embodiment of the present invention;
fig. 3 is a schematic diagram 1 of a two-dimensional PSD setting position in embodiment 1 of the present invention;
fig. 4 is a schematic diagram of a two-dimensional PSD setting position in embodiment 1 of the present invention 2;
fig. 5 is a schematic diagram of a one-dimensional PSD setting position in embodiment 2 of the present invention.
Detailed Description
To make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings, and it is apparent that the described embodiments are some, but not all embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The terms "comprising" and "having," and any variations thereof, as referred to in embodiments of the present invention, are intended to cover non-exclusive inclusions. For example, a process, method, system, article, or apparatus that comprises a list of steps or elements is not limited to only those steps or elements but may alternatively include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.
In the terahertz thickness measurement process, the distance and the position relation between the measuring instrument and the film to be measured influence the thickness measurement result, so that the distance and the deflection angle data between the measuring instrument and the film to be measured need to be acquired in the thickness measurement process. However, currently, there is a deviation in obtaining the distance and deflection angle data, which may cause the film thickness measurement data to be inaccurate.
Therefore, the conventional terahertz film thickness measuring instrument cannot accurately acquire the position data of the film to be measured.
In order to solve the above problems, embodiments of the present invention provide a terahertz film thickness measuring apparatus;
the terahertz film thickness measuring device provided by the embodiment of the invention comprises the following components as shown in fig. 1 to 3: the device comprises a spectrometer host, a terahertz probe and a position detection mechanism; the terahertz probe is in communication connection with the spectrometer host, and is fixed at the front end of the spectrometer host; the front end of the terahertz probe is provided with a terahertz window piece 1, a terahertz exit window 2 is arranged on the terahertz window piece 1, and the position detection mechanism is arranged on the terahertz window piece 1; the position detection mechanism comprises a laser device 3, a PSD position detector 4, a lens 5 and an ADC conversion chip; the laser device 3 is arranged around the terahertz emergent window 2, the PSD position detector 4 is arranged on the terahertz window sheet 1, and the lens 5 is arranged in front of the PSD position detector 4; the main spectrometer machine generates a terahertz signal, the terahertz signal is transmitted to a film layer to be detected through a terahertz probe, the terahertz signal is reflected by the film layer and then is received by the terahertz probe, and the main spectrometer machine collects and processes the terahertz reflection signal; the position detection mechanism emits red light through the laser device 3, the red light reaches the position of the film layer to form a laser spot, the PSD position detector 4 collects optical signals of the laser spot through the lens 5 and transmits the optical signals of the laser spot to the ADC conversion chip to perform photoelectric signal conversion, and position data of the film layer is obtained.
By adopting the terahertz film thickness measuring device provided by the embodiment of the invention, the plurality of lasers are uniformly arranged on the periphery of the terahertz emergent window 2, so that the image of the laser spot is just on the diagonal line of the PSD position detector 4, the requirement of the image point position detection range at each distance is met, the PSD position detector 4 collects the image of the laser spot through the lens 5, namely, the laser signal is collected, and the ADC conversion chip carries out photoelectric signal conversion on the laser signal, so that the position data of the measured film layer relative to the measuring device, including distance and deflection angle data, is obtained. Through setting up PSD position detector 4, strengthened the position detection precision to the rete surveyed to avoided prior art to have the problem of error when obtaining distance and declination data between measuring device and the rete surveyed, and then also promoted the precision to thick measured data of membrane.
Through tests, the following conclusion is obtained after the influence of the measured film surface deflection angle on the measurement process and the measurement result is calculated, measured and analyzed:
(1) the farther the measurement distance is, the larger the influence of the deflection angle on the calibers of the terahertz beam splitter and the converging lens 5 is, so that the detection distance is not suitable to be too large. The variation of the preliminary designed detection distance is 150-350 mm.
(2) When the deviation angle is increased, the offset of the focused light spot on the terahertz receiving antenna is rapidly increased, so that the allowable deviation angle is not too large. The primarily designed deflection angle control range is +/-1 degree, the detection range is +/-10 degrees, and the detection precision is 1 degree.
In a possible embodiment, as shown in fig. 3, 5, the laser device 3 comprises four red lasers; selecting a common 650nm red laser with the power of 10 mW; four red laser devices are respectively arranged above, below, on the left side and on the right side of the terahertz emergent window 2, and the requirement of the detection range of the image point position at each distance can be met by the arrangement, so that the accuracy of thickness measurement data is improved. If the deflection angle of the film to be detected is +/-5 +/-1 degrees, the resolution of the PSD is 0.002mm, and the variation of the distance is completely detected. The measurement precision of the calibrated PSD can reach 0.1%, the image point position corresponding to the 7 x 7mm size is 0.007mm, the diagonal direction is 0.01mm, and the measurement precision requirement is met.
In one possible embodiment, the focal length of the lens 5 is 16mm and the optical size of the lens 5 is 2/3 inches. Since the field of view is 7 x 7mm, a standard lens 5 with a focal length of 16mm and an optical size of 2/3 inches was used.
In a possible implementation mode, the ADC conversion chip is a 4-channel ADC conversion chip, the ADC conversion requirement of 4-channel signals can be met, the detection speed does not need to be very high, the conversion frequency of 1kHz and above is enough, the required conversion precision is high, and a 16-BIT ADC is selected.
In a possible embodiment, as shown in fig. 2, a color filter 6 is further included, and the color filter 6 is used for eliminating the influence of background light. A narrow-band filter is selected, the central wavelength is 650nm, and the half width is less than 30 nm.
In a possible implementation mode, the spectrometer host is provided with a femtosecond laser, a fiber beam splitter, a fiber collimator, an optical delay line, a pyramid mirror and a moving unit thereof, a compensating fiber, a driver, an amplifier of a time-domain electric signal, a digital-to-analog converter and a central controller. The main machine of the spectrometer generates terahertz signals by utilizing the components, and the terahertz signals are transmitted to the film layer to be measured through the terahertz probe, so that terahertz thickness measurement operation is realized.
In one possible implementation mode, a terahertz transmitting antenna, a terahertz collimating lens, a terahertz reflecting beam splitter, a terahertz converging lens, a terahertz receiving antenna and a preamplifier are arranged on the terahertz probe. The terahertz probe transmits terahertz signals generated by the spectrometer host by utilizing the components, receives the terahertz signals reflected by the film layer through the terahertz receiving antenna, and finally collects the terahertz signals by the spectrometer host.
Example 1:
in one possible embodiment, as shown in fig. 3 and 4, the PSD position detector 4 is a two-dimensional PSD41, and the target surface size of the two-dimensional PSD41 is 7 × 7 mm; the two-dimensional PSD41 is located right below the terahertz emission window 2 and fixed with the terahertz window sheet 1. The detection of the position of the optical point is realized by setting 1 two-dimensional PSD 41. Can adjust rete position and angle according to the detection result to rete measuring distance and declination when accurate final operating condition of detecting, simple structure, position detection precision is higher, has promoted the accuracy of thickness measurement data.
Example 2:
in one possible embodiment, as shown in fig. 5, the PSD position detectors 4 are two one-dimensional PSDs 42; the two one-dimensional PSDs 42 are respectively positioned right below and on the right side of the terahertz emergent window 2 and are fixed with the terahertz window sheet 1. The detection of the position of the light spot is realized by arranging 2 one-dimensional PSDs 42, so that the method has the advantages of lower cost and higher detection precision.
The embodiment of the invention also provides electronic equipment, which comprises a mechanical arm and a control computer, wherein the control computer is the terahertz film thickness measuring device provided by the embodiment; the control computer is electrically connected with the mechanical arm, and the terahertz film thickness measuring device is fixed on the mechanical arm; the control computer is in communication connection with the terahertz film thickness measuring device; the control computer controls the relative position of the terahertz film thickness measuring device and the film layer to be measured by controlling the operation of the mechanical arm, and the control computer is also used for receiving the measurement data and processing the measurement data to obtain a measurement thickness value. The operation of the mechanical arm is controlled through a control computer, the measuring distance is controlled within the range of 150-350 mm, and the measuring deflection angle is controlled within the range of +/-10 degrees. The thickness measuring device is combined with a mechanical arm to automatically measure in real time, and the detection defect of the traditional thickness measuring technology is overcome.
It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, it need not be further defined or explained in subsequent figures.
In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings or the orientations or positional relationships that the products of the present invention are conventionally placed in use, and are only used for convenience in describing the present invention and simplifying the description, but do not indicate or imply that the devices or elements referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first," "second," "third," and the like are used solely to distinguish one from another, and are not to be construed as indicating or implying relative importance.
In the description of the present invention, it should also be noted that, unless otherwise explicitly specified or limited, the terms "disposed," "mounted," "connected," and "connected" are to be construed broadly and may, for example, be fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
Corresponding to the method, the embodiment of the invention also provides a computer readable storage medium, wherein the computer readable storage medium stores machine executable instructions, and when the computer executable instructions are called and executed by a processor, the computer executable instructions cause the processor to execute the steps of the method.
Finally, it should be noted that: although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art will understand that: any person skilled in the art can modify or easily conceive the technical solutions described in the foregoing embodiments or equivalent substitutes for some technical features within the technical scope of the present disclosure; and the modifications, changes or substitutions do not make the essence of the corresponding technical solutions depart from the scope of the technical solutions of the embodiments of the present invention. Are intended to be covered by the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.
Claims (9)
1. A terahertz film thickness measuring device is characterized by comprising: the device comprises a spectrometer host, a terahertz probe and a position detection mechanism;
the terahertz probe is in communication connection with the spectrometer host, and is fixed at the front end of the spectrometer host;
a terahertz window sheet is arranged at the front end of the terahertz probe, a terahertz exit window is arranged on the terahertz window sheet, and the position detection mechanism is arranged on the terahertz window sheet;
the position detection mechanism comprises a laser device, a PSD position detector, a lens and an ADC conversion chip;
the laser equipment is arranged on the periphery of the terahertz emergent window, the PSD position detector is arranged on the terahertz window sheet, and the lens is arranged in front of the PSD position detector;
the main spectrometer machine generates a terahertz signal, the terahertz signal is transmitted to a film layer to be detected through the terahertz probe, the terahertz signal is reflected by the film layer and then received by the terahertz probe, and the main spectrometer machine collects and processes the terahertz reflection signal; the position detection mechanism emits red light through a laser device, the red light reaches the position of the film layer to form a laser spot, the PSD position detector collects optical signals of the laser spot through the lens and transmits the optical signals of the laser spot to the ADC conversion chip to perform photoelectric signal conversion, and position data of the film layer is obtained.
2. The terahertz film thickness measuring device according to claim 1, wherein the PSD position detector is a two-dimensional PSD;
the target surface size of the two-dimensional PSD is 7 x 7 mm;
the two-dimensional PSD is located right below the terahertz emergent window and fixed with the terahertz window sheet.
3. The terahertz film thickness measuring device according to claim 1, wherein the PSD position detectors are two one-dimensional PSDs;
the two one-dimensional PSDs are respectively positioned right below and on the right side of the terahertz emergent window and are fixed with the terahertz window sheet.
4. The terahertz film thickness measuring apparatus according to claim 2 or 3, wherein the laser device includes four red lasers;
the four red lasers are respectively arranged above, below, on the left side and on the right side of the terahertz emergent window.
5. The terahertz film thickness measuring device according to claim 1, wherein the focal length of the lens is 16mm, and the optical size of the lens is 2/3 inches.
6. The terahertz film thickness measuring device according to claim 1, wherein the ADC conversion chip is a 4-channel ADC conversion chip.
7. The terahertz film thickness measuring device according to claim 1, wherein the spectrometer main unit is provided with a femtosecond laser, a fiber beam splitter, a fiber collimator, an optical delay line, a pyramid mirror and a moving unit thereof, a compensating fiber, a driver, an amplifier of a time-domain electrical signal, a digital-to-analog converter and a central controller.
8. The terahertz film thickness measuring device according to claim 1, wherein a terahertz transmitting antenna, a terahertz collimating lens, a terahertz reflecting beam splitter, a terahertz converging lens, a terahertz receiving antenna and a preamplifier are arranged on the terahertz probe.
9. An electronic apparatus, comprising a mechanical arm, a control computer, and the terahertz film thickness measuring device according to any one of claims 1 to 8;
the control computer is electrically connected with the mechanical arm, and the terahertz film thickness measuring device is fixed on the mechanical arm;
the control computer is in communication connection with the terahertz film thickness measuring device;
the control computer controls the relative position of the terahertz film thickness measuring device and the film layer to be measured by controlling the operation of the mechanical arm, and the control computer is also used for receiving the measurement data and processing the measurement data to obtain a measurement thickness value.
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| CN202210564534.1A CN114964013A (en) | 2022-05-23 | 2022-05-23 | Terahertz film thickness measuring device and electronic equipment |
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| CN202210564534.1A CN114964013A (en) | 2022-05-23 | 2022-05-23 | Terahertz film thickness measuring device and electronic equipment |
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| CN202210564534.1A Pending CN114964013A (en) | 2022-05-23 | 2022-05-23 | Terahertz film thickness measuring device and electronic equipment |
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