CN114959842B

CN114959842B - Electroplating device and method for manufacturing packaging structure

Info

Publication number: CN114959842B
Application number: CN202110190373.XA
Authority: CN
Inventors: 许嘉峻
Original assignee: Advanced Semiconductor Engineering Inc
Current assignee: Advanced Semiconductor Engineering Inc
Filing date: 2021-02-18
Publication date: 2024-06-07
Anticipated expiration: 2041-02-18

Abstract

The present disclosure provides an electroplating apparatus and a method of manufacturing a package structure. According to some embodiments of the present disclosure, an electroplating apparatus includes a first bus; and a second bus, wherein an included angle is formed between the first bus and the second bus, the first bus comprises a first end portion close to the second bus and a first portion far away from the second bus, and a gap between cathodes of the first end portion of the first bus is larger than a gap between cathodes of the first portion.

Description

Electroplating device and method for manufacturing packaging structure

Technical Field

The present disclosure relates to an electroplating apparatus, and more particularly, to a method of forming a package structure using the same.

Background

In order to increase productivity, quadrangular substrates and plating apparatuses applied to the quadrangular substrates have come to be widely used in various processes for semiconductor manufacturing and/or packaging, such as plating processes. In performing an electroplating process on a square substrate, electrodes arranged to correspond to the shape of the substrate are used. Because charges are easy to accumulate at the included angle (corner) of the substrate, the electric field at the included angle is larger than that of other areas, so that the deposition speed of metal ions at the included angle is larger than that of other areas, and the formed electroplated layer has the problem of poor uniformity. Accordingly, a new electroplating apparatus and method are needed to ameliorate the above problems.

Disclosure of Invention

According to some embodiments of the present disclosure, an electroplating apparatus includes a first bus line; and a second bus, wherein an included angle is formed between the first bus and the second bus, the first bus comprises a first end portion close to the second bus and a first portion far away from the second bus, and a gap between cathodes of the first end portion of the first bus is larger than a gap between cathodes of the first portion.

According to some embodiments of the present disclosure, a method of manufacturing a package structure includes: providing an electroplating device, which comprises a first bus and a second bus, wherein an included angle is formed between the first bus and the second bus, and the electroplating device further comprises a first block close to the included angle and a second block far away from the included angle; and providing that the electric field of the first bus line located in the first block is smaller than the electric field of the first bus line located in the second block.

Drawings

The aspects of the disclosure may be readily understood from the following detailed description when read in conjunction with the accompanying drawings. It should be noted that the various features may not be drawn to scale. In fact, the dimensions of the various features may be arbitrarily increased or decreased for clarity of discussion.

FIG. 1 is a sectional view of a portion of a plating apparatus according to a comparative example of the present disclosure.

Fig. 2 is a bottom view of the plating apparatus according to the comparative example of the present disclosure.

Fig. 3 is a top view of a plating apparatus and a substrate according to a comparative example of the present disclosure.

FIG. 4 is a schematic diagram showing the metal concentrations corresponding to different regions of a substrate during an electroplating process.

Fig. 5 is a cross-sectional view showing a package structure formed using the electroplating apparatus of the comparative example.

Fig. 6 is a top view of an electroplating apparatus according to an embodiment of the present disclosure.

Fig. 7 is a top view of an electroplating apparatus according to an embodiment of the present disclosure.

Fig. 8 is a top view of an electroplating apparatus according to an embodiment of the present disclosure.

Fig. 9 is a top view of an electroplating apparatus according to an embodiment of the present disclosure.

Fig. 10 is a top view of an electroplating apparatus according to an embodiment of the present disclosure.

FIG. 11 is a top view of an electroplating apparatus according to an embodiment of the present disclosure.

Fig. 12 is a top view of an electroplating apparatus according to an embodiment of the present disclosure.

Fig. 13 is a top view of an electroplating apparatus according to an embodiment of the present disclosure.

Fig. 14 is a top view of an electroplating apparatus according to an embodiment of the present disclosure.

Fig. 15 illustrates a cross-sectional view of a package structure according to an embodiment of the present disclosure.

Common reference numerals are used throughout the drawings and the detailed description to refer to the same or like components. The present disclosure will become more apparent from the following detailed description taken in conjunction with the accompanying drawings.

Detailed Description

The following disclosure provides many different embodiments, or examples, for implementing different features of the provided subject matter. Specific examples of components and arrangements are described below. Of course, these are merely examples and are not intended to be limiting. In this disclosure, references to forming or disposing a first feature on or over a second feature may include embodiments in which the first and second features are formed or disposed in direct contact, and may also include embodiments in which additional features may be formed or disposed between the first and second features such that the first and second features may not be in direct contact. In addition, the present disclosure may repeat reference numerals and/or letters in the various examples. This repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed.

Embodiments of the present disclosure are discussed in detail below. However, it is to be understood that this disclosure provides many applicable concepts that can be embodied in a wide variety of specific contexts. The particular embodiments discussed are illustrative only and are not limiting of the scope of the present disclosure.

FIG. 1 is a cross-sectional view of a portion of a plating apparatus 10' and a substrate 20 according to a comparative example of the present disclosure.

As shown in fig. 1, the plating apparatus 10 'may include a substrate carrier 11', an electrode fixing member 12', and a conductive layer 13'. The plating apparatus 10' may be a plating apparatus for performing, for example, a plating process. Specifically, the substrate 20 may be placed on the plating apparatus 10 'and placed in a plating tank (not shown) together with the plating apparatus 10' to perform a plating process to form a circuit layer (or plating layer) on the surface of the substrate 20. In fig. 1, only some of the components of the electroplating apparatus 10' are shown. The electroplating apparatus 10' may have other components such as a power source, an anode, and/or other components.

The substrate carrier 11' may be used to carry a substrate 20. The substrate carrier 11' may have a recess (not shown) to accommodate the substrate 20. The substrate carrier 11' may have other means for securing the substrate 20.

The electrode fixing member 12 'may be used to dispose or fix the conductive layer 13'. The electrode fixing member 12 'may be connected to the substrate carrier 11'. For example, the electrode fixing member 12' may be disposed on the substrate carrier 11' and directly contact the substrate carrier 11 '. The electrode fixing member 12 'and the substrate carrier 11' may be integrally formed. Or the electrode fixing member 12 'and the substrate carrier 11' may be separated into two separate components by disassembly. The electrode fixing member 12 'may not be connected to the substrate carrier 11'. For example, the electrode fixing member 12 'may be mounted on the substrate carrier 11' via another component.

The conductive layer 13 'may be disposed on the electrode fixing member 12'. The conductive layer 13' may include a connection member 131' and a cathode 132'. The connection member 131 'may be used to electrically connect and/or fix the plurality of cathodes 132'. The cathode 132' may be used to contact the substrate 20 to provide current to the surface of the substrate 20. For example, the connection member 131 'may be connected to a power source, and when the cathode 132' is in contact with the substrate 20, a current may be applied to the surface of the substrate 20 through the connection member 131 'and the cathode 132'.

The substrate 20 may be a glass substrate, a wafer, and/or other suitable substrate. The surface of the substrate 20 may be used to form a wiring layer. The wiring layers described above may be used to electrically connect, for example, one or more electronic components, such as chips or other suitable electronic components.

The shielding layer 31 (MASK LAYER) may be disposed on the substrate 20. The shielding layer 31 may be an insulating material such as photoresist or other suitable component. The shielding layer 31 may be used to define a plating pattern formed on the surface of the substrate 20. For example, the shielding layer 31 may cover a first portion of the surface of the substrate 20 and expose a second portion of the surface of the substrate 20. A seed layer (not shown) may be formed on the second portion of the surface of the substrate 20, and a circuit layer may be formed on the second portion of the surface of the substrate 20 by an electroplating process.

The support 32 may be used to separate the shielding layer 31 and the electrode fixing member 12'. The length of the support 32 can be adjusted to adjust the relative position of the cathode 132' and the substrate 20.

Fig. 2 is a bottom view of a plating apparatus 10' according to a comparative example of the present disclosure. For brevity, the substrate carrier 11' is not shown.

As shown in fig. 2, the electrode fixing member 12' may have a quadrangular contour. The electrode fixation member 12' may also have other suitable contours, such as polygonal or other suitable contours. The electrode fixing member 12' may have an annular contour with a hollowed-out pattern in the central portion, or may have a contour without a hollowed-out pattern in the central portion. The electrode fixing member 12' may cover the connection member 131' and/or the cathode 132'. The electrode fixing member 12' may entirely or partially cover the connection member 131' and/or the cathode 132'.

The connection member 131' may have a quadrangular profile. The connecting member 131' may also have other suitable contours, such as a polygon or other suitable contours. The connection member 131' may have an annular profile with a hollowed-out pattern in a central portion. The conductive layer 13 or the connection member 131' may have a bus line 13e1 and a bus line 13e2 adjacent to the bus line 13e 1. The bus 13e1 may extend in a first direction and the bus 13e2 may extend in a second direction. The first direction may be different from the second direction. The first direction may be substantially perpendicular to the second direction. Bus 13e1 may be connected to bus 13e2. Bus 13e1 may not be connected to bus 13e2. Included angle 13c1 may be formed by bus 13e1 and bus 13e2.

The cathode 132 'may be disposed on each side of the connection member 131', for example, the bus bars 13e1 and 13e2. At least one cathode 132' is present on one side of the connecting member 131' (e.g., bus 13e 1) to interface with the connecting member 131 '. Each cathode 132 'may extend from an edge of the connection member 131' (e.g., bus 13e2 of bus 13e 1) toward a central portion of the connection member 131 '(e.g., a hollowed-out pattern defined by the connection member 131'). Each cathode 132' may have a portion overlapping (or contacting) the connection member 131' and a portion not overlapping (or contacting) the connection member 131 '.

As shown in fig. 2, the electrode fixing member 12' may have a non-end portion R1 and an end portion R2 corresponding to the bus 13e 1. The non-end portion R1 and the end portion R2 may have the same area as viewed from the top or bottom view. The distance between the end portion R2 and the angle 13c1 may be different from the distance between the non-end portion R1 and the angle 13c1. End R2 is closer to included angle 13c1 than is non-end R1. The non-end portions R1 and R2 are imaginary areas for calculating the area ratio of the cathode 132' per unit area. Specifically, the area ratio of the cathode 132 'at the non-end portion R1 may be defined as the area where the cathode 132' overlaps with the non-end portion R1 in an upward or downward view; the area ratio of the cathode 132 'at the end portion R2 may be defined as the area where the cathode 132' overlaps the end portion R2 in an upward or downward view. As shown in fig. 2, in the comparative example, the area ratio of the cathode 132 'in the non-end portion R1 is the same as the area ratio of the cathode 132' in the end portion R2.

Fig. 3 is a top view of the electroplating apparatus 10' and the substrate 20 according to the comparative example of the present disclosure. To clearly show the positional relationship between the substrate 20 and the cathode 132', some components are omitted. In addition, the portion of the substrate 20 covered by the cathode 132' is indicated by a dotted line.

As shown in fig. 3, the substrate 20 may have a quadrangular profile. The substrate 20 may also have other suitable contours, such as polygonal or other suitable contours. The substrate 20 and the cathode 132' have an overlap. The cathode 132' may have a portion in contact with the substrate 20. The area ratio of the cathode 132' in the non-end portion R1 is substantially proportional to the area of the cathode 132' in the substrate 20 in contact with the substrate 20 in the corresponding non-end portion R1, and the area ratio of the cathode 132' in the end portion R2 is substantially proportional to the area of the cathode 132' in the substrate 20 in contact with the cathode 132' in the corresponding end portion R2. The area of the cathode 132' in contact with or overlapping the substrate 20 in a unit area affects the current density received by that unit area. For example, if the area of contact or overlap of the cathode 132' and the substrate 20 per unit area is larger, the current density received per unit area is larger. In the comparative example, since the area ratio of the cathode 132' in the non-end portion R1 is the same as the area ratio of the cathode 132' in the end portion R2, the current density applied by the plating apparatus 10' at the corresponding non-end portion R1 of the substrate 20 is substantially the same as the current density applied at the corresponding end portion R2 of the substrate 20.

As shown in fig. 3, the substrate 20 has an included angle corresponding to the included angle of the conductive layer 13'. For example, the substrate 20 has an included angle 20c1 corresponding to the included angle 13c1, and an included angle 20c2 corresponding to the included angle 13c 2. When the electroplating process is performed, the included angle (for example, the included angle 20c1 and the included angle 20c 2) of the substrate 20 is prone to generate a point discharge (corona discharge), so that when the electroplating process is performed, the included angle 20c1 and the included angle 20c2 are prone to generate a relatively large electric field, which affects the thickness and uniformity of the electroplated layer. Specifically, if the same current density is applied to the substrate 20 near the included angle 20c1 (e.g., at the corresponding end portion R2) and the substrate 20 far from the included angle 20c1 (e.g., at the corresponding non-end portion R1), a relatively large electric field is generated near the included angle 20c1 (e.g., at the corresponding end portion R2) and a relatively large electric field is generated far from the included angle 20c1 (e.g., at the corresponding non-end portion R1), so that the thicknesses of the line layers near the included angle and far from the included angle are different.

Referring to fig. 4, fig. 4 is a schematic diagram showing the concentration of metal ions M corresponding to different regions of the substrate 20 when the electroplating process is performed in the comparative example.

During the electroplating process, the electroplating apparatus 10' and the substrate 20 are placed in an electroplating tank (not shown), and the conductive layer 13' of the electroplating apparatus 10' may be electrically connected to a cathode of a power source (not shown). An electric field is generated between the anode and the cathode of the power supply, so that the metal ions M in the plating solution are collected to the cathode due to the electric field and reduced to metal to be deposited on the substrate 20. As described previously, due to the tip discharge, if the same current density is applied to different regions of the substrate 20, a larger electric field may be generated in the substrate 20 near the included angle 20c1 and near the included angle 20c2, and a smaller electric field may be generated in the substrate 20 far from the included angle 20c1 and far from the included angle 20c 2. Therefore, the metal ions M in the plating solution are relatively easy to collect near the included angle 20c1 and near the included angle 20c2, and are relatively difficult to collect far from the included angle 20c1 and far from the included angle 20c2, so that the concentration of the metal ions M near the included angle 20c1 and near the included angle 20c2 is relatively high, and the concentration of the metal ions M far from the included angle 20c1 and far from the included angle 20c2 is relatively low. As a result, there is a relatively large thickness difference between the thickness of the wiring layer formed near the included angle (e.g., included angle 20c1 and included angle 20c 2) and the thickness of the wiring layer formed far from the included angle.

Fig. 5 is a cross-sectional view of a package structure 40 'formed using the electroplating apparatus 10' of the comparative example.

After the electroplating process is performed, the circuit layer 31', the circuit layer 32', and the circuit layer 33' are formed on the substrate 20. The wiring layers 31', 32' and 33' may comprise a metal, such as copper, silver, gold, aluminum, nickel, zinc, chromium or other suitable materials. The circuit layer 31' is disposed near the included angle 20c1, the circuit layer 33' is disposed near the included angle 20c2, and the circuit layer 32' is disposed far from the included angle 20c1 and the included angle 20c 2. As described previously, the thickness of the wiring layer 31 'formed at the corresponding angle 20c1 is greater than the thickness of the wiring layer 32', and the thickness of the wiring layer 33 'formed at the corresponding angle 20c2 is greater than the thickness of the wiring layer 32', due to the tip discharge. In the comparative example, the standard deviation of the uniformity of the thickness of the circuit layer is greater than 10%, which has a negative effect on the subsequent process (e.g., mounting the electronic component on the circuit layer), thereby decreasing the yield of the package structure 40'.

In order to further improve the yield of the electroplating process, the embodiment of the disclosure compensates the electric field non-uniformity caused by the sharp user by predefining the pattern configuration of the cathodes of the electroplating device so that the cathodes of different areas have different areas and/or gaps, or controlling different currents to be given to the cathodes of different areas.

Fig. 6 is a top view of the electroplating apparatus 10a and the substrate 20 according to an embodiment of the present disclosure. For simplicity, some of the components (e.g., substrate carrier, electrode mounting member) are not shown. The electroplating apparatus 10a may be the same as or similar to the electroplating apparatus 10', one of which is different from the cathode 132a. Cathode 13 may include a connection member 131 and a cathode 132a. The connection member 131 may be identical to the connection member 131'. Cathode 132a includes cathode 1321 located in non-end portion R1 and cathode 1322 located in end portion R2. In some embodiments, the first area ratio of the cathode 1321 in the non-end portion R1 is different than the second area ratio of the cathode 1322 in the end portion R2. In some embodiments, the first area ratio is greater than the second area ratio. In some embodiments, the area of each cathode 1321 is the same as the area of each cathode 1322, i.e., the area of each cathode 1321 in contact with the substrate 20 is the same as the area of each cathode 1322 in contact with the substrate 20, from a top view. In some embodiments, the number of cathodes 1321 in the non-end portion R1 is greater than the number of cathodes 1322 in the end portion R2. In some embodiments, the gap (pitch) of cathode 1321 in non-end R1 is less than the gap of cathode 1322 in end R2.

In this embodiment, the area ratio of the cathodes (e.g., cathode 1321 and cathode 1322) per unit area is changed to adjust the contact or overlap area of the cathode 132a and the substrate 20, and the current density applied to the substrate 20 is changed. As shown in fig. 6, the second area ratio occupied by the cathode 1322 near the end R2 at the included angle 13c1 is smaller than the first area ratio occupied by the cathode 1321 at the non-end R1 away from the included angle 13c1, so that the current density obtained at the corresponding end R2 of the substrate 20 (or near the included angle 20c 1) is smaller than the current density obtained at the corresponding non-end R1 of the substrate 20 (or far from the included angle 20c 1). In this embodiment, a smaller current density is given where a relatively strong electric field is easily generated in the substrate 20, and a larger current density is given where a relatively weak electric field is easily generated in the substrate 20, so that the difference in electric field generated at the two places becomes small. Therefore, the uniformity of the thickness of the circuit layer formed on the substrate 20 is improved, and the manufacturing yield of the packaging structure is improved.

Fig. 7 is a top view of a plating apparatus 10b according to an embodiment of the present disclosure. The electroplating apparatus 10b may be the same as or similar to the electroplating apparatus 10a, one of which differs in the arrangement of the cathodes 132 b. The connection member 131 may have a bus 13e3, and the bus 13e3 may be adjacent to the bus 13e1 and face the bus 13e2. Included angle 13c3 may be formed by bus 13e1 and bus 13e 3. The electroplating apparatus 10b may have an end R3. The end R2 and the end R3 are located on both sides of the bus 13e 1. The non-end portion R1 is located between the end portions R2 and R3. End R3 may be closer to included angle 13c3 than non-end R1. In some embodiments, the first area ratio of the cathode 1321 in the non-end portion R1 is different than the third area ratio of the cathode 1323 in the end portion R3. In some embodiments, the third area ratio occupied by the cathode 1323 at the end R3 near the included angle 13c3 is less than the first area ratio occupied by the cathode 1321 at the non-end R1 away from the included angle 13c 1. In some embodiments, the third area ratio occupied by cathode 1323 near end R3 at included angle 13c3 is substantially equal to the second area ratio occupied by cathode 1322 near end R2 at included angle 13c 1.

In this embodiment, the area ratio of the cathodes (e.g., cathode 1321, cathode 1322, and cathode 1323) per unit area is changed to adjust the contact or overlap area of the cathode 132b and the substrate 20, and the current density applied to the substrate 20 is changed. As shown in fig. 7, the current density obtained at the substrate 20 corresponding to the non-end portions R1, R2, and R3 is adjusted by changing the area ratio of the cathode 132b facing the non-end portions R1, R2, and R3. In this embodiment, a smaller current density is given where a relatively strong electric field is easily generated in the substrate 20, and a larger current density is given where a relatively weak electric field is easily generated in the substrate 20, so that the difference in electric field generated at the two places becomes small. Therefore, the uniformity of the thickness of the circuit layer formed on the substrate 20 is improved, and the manufacturing yield of the packaging structure is improved.

Fig. 8 is a top view of a plating apparatus 10c according to an embodiment of the present disclosure. The electroplating apparatus 10c may be the same or similar to the electroplating apparatus 10a, one of which differs in the cathode 132c. In some embodiments, the first area ratio of the cathode 1321 in the non-end portion R1 is different than the second area ratio of the cathode 1322 in the end portion R2. In some embodiments, the area of at least one of the plurality of cathodes 1321 at the non-end portion R1 is different than the area of at least one of the plurality of cathodes 1322 at the end portion R2. In some embodiments, the area of at least one of the plurality of cathodes 1321 at the non-end portion R1 is greater than the area of at least one of the plurality of cathodes 1322 at the end portion R2. In some embodiments, the gap between the plurality of cathodes 1321 may be the same as the gap between the plurality of cathodes 1322. In some embodiments, the gap between the plurality of cathodes 1321 may be different than the gap between the plurality of cathodes 1322.

In this embodiment, the area ratio of the cathodes (e.g., cathode 1321 and cathode 1322) per unit area is changed to adjust the contact or overlap area of the cathode and the substrate 20, and the current density applied to the substrate 20 is changed. Therefore, the uniformity of the thickness of the circuit layer formed on the substrate 20 is improved, and the manufacturing yield of the packaging structure is improved.

Fig. 9 is a top view of a plating apparatus 10d according to an embodiment of the present disclosure. The electroplating apparatus 10d may be the same or similar to the electroplating apparatus 10a, one of which is different from the cathode 132d. In some embodiments, the first area ratio occupied by 132d in non-end portion R1 is different than the second area ratio occupied by cathode 132d in end portion R2. In some embodiments, the cathode 132d may extend continuously from the non-end portion R1 to the end portion R2 in a first direction (e.g., the extending direction of the bus bar 13e 1). In some embodiments, the cathode 132d has a first length L1 in a second direction (e.g., the extending direction of the bus bar 13e 2) at the non-end portion R1 and a second length L2 in the second direction at the end portion R2, the first length L1 being different from the second length L2. In some embodiments, the first length L1 is greater than the second length L2. In other embodiments, the cathode 132d may discontinuously extend from the non-end portion R1 to the end portion R2 in the first direction.

Fig. 10 is a top view of a plating apparatus 10e according to an embodiment of the present disclosure. The electroplating apparatus 10e may be the same as or similar to the electroplating apparatus 10a, one of which is different in the connecting member 131. In some embodiments, the connection means 131 may include a bus 13e4 and a bus 13e5. In some embodiments, the buses 13e4 and 13e5 may form a quadrilateral. In some embodiments, bus 13e4 may be electrically connected to the same power source as bus 13e5. In some embodiments, bus 13e4 is in parallel with bus 13e5. In some embodiments, bus 13e4 may be electrically connected to a different power source than bus 13e5. Cathode 132e may include cathode 1323 and cathode 1324. Cathode 1323 may be electrically connected to bus 13e4. Cathode 1324 may be electrically connected to bus 13e5. When the bus 13e4 and the bus 13e5 are electrically connected to different power sources, the current densities of the substrate 20 corresponding to different areas can be adjusted by applying different voltages to the bus 13e4 and the bus 13e5.

Fig. 11 is a top view of a plating apparatus 10f according to an embodiment of the present disclosure.

In some embodiments, the electroplating apparatus 10f may include a block (or portion) D1 and a block (or portion) D2. Bus 13e1 includes end R2, end R3, and non-end R1. Bus 13e2 includes end R4, end R6, and non-end R5. End R2 is closer to angle 13c1, and end R3 and non-end R1 are farther from angle 13c1. End R4 is closer to angle 13c1, and non-end R5 and end R6 are farther from angle 13c1. In some embodiments, block D1 includes end R2 of bus 13e1 and end R4 of bus 13e 2. Block D2 includes an end R3 and a non-end R1 of bus 13e1 opposite end R2. In some embodiments of the electroplating apparatus 10f, the electric fields of different areas may be adjusted by pre-changing the pattern configuration of the cathodes of the electroplating apparatus such that the cathodes of different areas have different areas and/or gaps, or controlling different currents to be applied to the cathodes of different areas, e.g., providing the electric field of the bus 13e1 located in the area D1 smaller than the electric field of the bus 13e1 located in the area D2. Thus, the sum (sum of ELECTRIC FIELD) of the electric fields of the buses 13e1 and 13e2 in the block D1 is substantially the same as the electric field of the bus 13e1 in the block D2. That is, the electric field in the block D1 is substantially the same as the electric field in the block D2. In some embodiments, the gap of cathode 1322 of block D1 of electroplating apparatus 10f is greater than the gap of cathode 1323 of block D2. In some embodiments, the gap of cathode 1322 of bus 13e1 of electroplating apparatus 10f is greater than the gap of cathode 1323 of bus 13e 1. In some embodiments, the gap of the cathode 1326 of the end portion R6 of the electroplating apparatus 10f is greater than the gap of the cathode 1324 of the end portion R4. In some embodiments, the gap of the cathode 1326 of the bus bar 13e2 of the electroplating apparatus 10f is greater than the gap of the cathode 1324 of the bus bar 13e 2. In some embodiments, the method of adjusting the electric field may include providing current at the end R2 of the bus 13e1 and not providing current at the end R4 of the bus 13e2, or providing current at the end R4 of the bus 13e2 and not providing current at the end R2 of the bus 13e1, where the bus 13e1 is not (physically) connected to the bus 13e 2. In some embodiments, cathode 1321 of bus 13e1 and cathode 1324 of bus 13e2 do not overlap each other.

In this embodiment, a smaller electric field is applied to the portion of the substrate 20 corresponding to the angled bus line, and a larger electric field is applied to the portion of the substrate remote from the angled bus line, such that the sum (or flux) of the electric fields of the two blocks is substantially the same. Therefore, the uniformity of the thickness of the circuit layer formed on the substrate 20 is improved, and the manufacturing yield of the packaging structure is improved.

Fig. 12 is a top view of an electroplating apparatus 10g according to an embodiment of the present disclosure.

In some embodiments, the electroplating apparatus 10f may include a block (or portion) D1, a block (or portion) D2, and a block (or portion) D2'. Block D1 includes end R2 of bus 13e1 and end R4 of bus 13e 2. Block D2 includes the non-end R1 of bus 13e 1. Block D2' includes the non-end R5 of bus 13e 2. In some embodiments of the electroplating apparatus 10g, the electric fields of different areas may be adjusted by pre-changing the pattern configuration of the cathodes of the electroplating apparatus such that the cathodes of different areas have different areas and/or gaps, or controlling different currents to be applied to the cathodes of different areas, e.g., providing an electric field of the bus 13e1 located within the area D1 that is smaller than an electric field of the bus 13e1 located within the area D2; the electric field of the bus 13e1 located in the block D1 is provided to be smaller than that of the bus 13e2 located in the block D2'. In some embodiments, the gap of the cathode 1322 or 1324 of the block D1 of the electroplating apparatus 10g is greater than the gap of the cathode 1321 of the block D2. In some embodiments, the gap of the cathode 1322 or 1324 of block D1 of electroplating apparatus 10g is greater than the gap of the cathode 1325 of block D2'. In some embodiments, the gap of cathode 1322 at end R2 of electroplating apparatus 10g is greater than the gap of cathode 1321 at non-end R1. In some embodiments, the gap of the cathode 1323 of the end portion R3 of the electroplating apparatus 10g is greater than the gap of the cathode 1321 of the non-end portion R1. In some embodiments, the gap of the cathode 1324 of the end portion R4 of the electroplating apparatus 10g is greater than the gap of the cathode 1325 of the non-end portion R5. In some embodiments, the gap of the cathode 1326 of the end portion R6 of the electroplating apparatus 10g is greater than the gap of the cathode 1325 of the non-end portion R5. In some embodiments, the method of adjusting the electric field may include controlling the current of the end portion R2 and the end portion R3 of the bus 13e1 to be smaller than the current of the non-end portion R1, or controlling the current of the end portion R4 and the end portion R6 of the bus 13e2 to be smaller than the current of the non-end portion R5. In this embodiment, a smaller electric field is applied to the portion of the substrate 20 corresponding to the angled bus line, and a larger electric field is applied to the portion of the substrate remote from the angled bus line, such that the sum (or flux) of the electric fields of the two blocks is substantially the same. Therefore, the uniformity of the thickness of the circuit layer formed on the substrate 20 is improved, and the manufacturing yield of the packaging structure is improved.

Fig. 13 is a top view of a plating apparatus 10h according to an embodiment of the present disclosure.

In some embodiments, the end R2 of the bus 13e1 does not include a cathode. In this embodiment, a smaller current density is given where a relatively strong electric field is easily generated in the substrate 20, and a larger current density is given where a relatively weak electric field is easily generated in the substrate 20, so that the difference in electric field generated at the two places becomes small. Therefore, the uniformity of the thickness of the circuit layer formed on the substrate 20 is improved, and the manufacturing yield of the packaging structure is improved.

Fig. 14 is a top view of a plating apparatus 10i according to an embodiment of the present disclosure.

In some embodiments, the electroplating apparatus 10i includes a bus 13e6, a bus 13e7, and a bus 13e8. In some embodiments, buses 13e6, 13e7, 13e8 may form a quadrilateral. Bus 13e6 may be located at a corresponding block D1. Bus 13e7 may be located at a corresponding block D2. Bus 13e8 may be located at a corresponding block D2'. In some embodiments, bus 13e6, bus 13e7, bus 13e8 are electrically connected to different power sources. In some embodiments, bus 13e6, bus 13e7, bus 13e8 are not connected to each other. In some embodiments, the method for adjusting the electric field may include: the current of the control block D1 is smaller than the current of the block D2 or the block D2'. For example, the current of the control bus 13e6 is smaller than the current of the bus 13e7, or the current of the control bus 13e6 is smaller than the current of the bus 13e8. When the buses 13e6, 13e7 and 13e8 are electrically connected to different power sources, the current densities (or electric fluxes) of the substrate 20 corresponding to different areas can be controlled by providing different currents to the buses 13e6, 13e7 and 13e8.

Fig. 15 illustrates a cross-sectional view of a package structure 40 according to an embodiment of the present disclosure.

The package structure 40 may be formed by using the electroplating apparatus 10a, 10b, 10c, 10d, 10e, 10f, 10g, 10h or 10i to form the circuit layers 31, 32 and 33 after performing the electroplating process. The wiring layers 31, 32 and 33 of the package structure 40 have smaller thickness differences and thus smaller standard deviations of the thicknesses than the wiring layers 31', 32' and 33 'of the package structure 40'. In some embodiments, the standard deviation of the thicknesses of the circuit layers 31, 32, and 33 of the package structure 40 may be between about 0 to about 5%.

Spatially relative terms, such as "below," "beneath," "lower," "above," "upper," "lower," "upper," "left," "right," and the like, as used herein for convenience of description, may be used herein to describe one component or feature as illustrated in the figures relative to another component or feature. In addition to the orientations depicted in the drawings, the spatially relative terms are intended to encompass different orientations of the device in use or operation. The device may be otherwise oriented (rotated 80 degrees or at other orientations) and the spatially relative descriptors used herein interpreted accordingly. It will be understood that when an element is referred to as being "connected" or "coupled" to another element, it can be directly connected or coupled to the other element or intervening elements may be present.

As used herein, the terms "about," "substantially," and "about" are used to describe and explain minor variations. When used in connection with an event or situation, the term may refer to instances where the event or situation occurs precisely as well as instances where the event or situation occurs in close proximity. As used herein with respect to a given value or range, the term "about" generally means within ±10%, 5%, 1% or 0.5% of the given value or range. Ranges can be expressed herein as from one endpoint to another endpoint, or between two endpoints. All ranges disclosed herein are inclusive of the endpoints unless otherwise indicated. The term "substantially coplanar" may refer to a difference in position of two surfaces located along a same plane being within a few micrometers (μm), such as a difference in position located along the same plane being within 10 μm, within 5 μm, within 1 μm, or within 0.5 μm. When values or characteristics are said to be "substantially" the same, the term may refer to values within ±10%, 5%, 1% or 0.5% of the average value of the values.

The foregoing has outlined features of several embodiments and detailed aspects of the present disclosure. The embodiments described in this disclosure may be readily utilized as a basis for designing or modifying other processes and structures to carry out the same or similar purposes and/or to achieve the same or similar advantages of the embodiments presented herein. Such equivalent constructions do not depart from the spirit and scope of the present disclosure, and various changes, substitutions, and alterations can be made hereto without departing from the spirit and scope of the present disclosure.

Claims

1. An electroplating apparatus comprising:

A substrate;

an electrode fixing member disposed on the substrate;

A conductive layer disposed on the substrate and connected to the electrode fixing member through a connecting member, the conductive layer including a first bus and a second bus; and

A plurality of cathodes disposed on the first bus and the second bus,

Wherein an included angle between the first bus and the second bus corresponds to an included angle of the substrate, the first bus includes a first end portion close to the second bus and a first portion far away from the second bus, and a gap between the plurality of cathodes on the first end portion of the first bus is larger than a gap between the plurality of cathodes on the first portion.

2. The electroplating device of claim 1, wherein the first portion is a second end of the first bus opposite the first end.

3. The electroplating apparatus of claim 1, wherein the second bus line comprises a third end portion proximate to the first bus line and a second portion distal from the first bus line, wherein gaps between the plurality of cathodes on the third end portion of the second bus line are less than gaps between the plurality of cathodes on the second portion.

4. The electroplating device of claim 1, wherein the first portion is a first non-end of the first bus, the first bus further comprising a second end opposite the first end, the gaps between the plurality of cathodes on the second end of the first bus being greater than the gaps between the plurality of cathodes on the first non-end.

5. The electroplating apparatus of claim 4, wherein the second bus comprises a third end proximate the first bus, a second non-end, and a fourth end opposite the third end, wherein a gap between the plurality of cathodes on the second non-end is less than a gap between the plurality of cathodes on the third end of the second bus, and a gap between the plurality of cathodes on the second non-end is less than a gap between the plurality of cathodes on the fourth end of the second bus.

6. The electroplating device of claim 3, wherein the second portion is a fourth end of the second bus opposite the third end.

7. The electroplating apparatus of claim 2, wherein the second bus includes a third end proximate to the first bus, the gaps between the plurality of cathodes on the third end being smaller than the gaps between the plurality of cathodes on the first end.

8. The electroplating apparatus of claim 1, wherein the first end of the first bus bar does not include a cathode.

9. The electroplating apparatus of claim 1, wherein the first bus is connected to the second bus.

10. A method of manufacturing a package structure, comprising:

Providing an electroplating apparatus, comprising:

A substrate;

an electrode fixing member disposed on the substrate;

A plurality of cathodes arranged on the first bus and the second bus, wherein an included angle between the first bus and the second bus corresponds to the included angle of the substrate, and the electroplating device further comprises a cathode arranged near to the first bus and the second bus

A first block of the included angle and a second block of the included angle; and

Providing that the electric field of the first bus line located in the first block is smaller than the electric field of the first bus line located in the second block.

11. The method of claim 10, wherein the first block comprises a first end of the first bus proximate the included angle and a second end of the second bus proximate the included angle, the second block comprises a first portion of the first bus distal the included angle or a second portion of the second bus distal the included angle, and an electric field within the first block is substantially the same as an electric field of the first bus within the second block or an electric field of the second bus within the second block.

12. The method of claim 11, wherein providing an electric field of the first bus line located within the first block that is smaller than an electric field of the first bus line located within the second block comprises: the electroplating device is provided with a gap between the plurality of cathodes in the first block being larger than a gap between the plurality of cathodes in the second block.

13. The method of claim 12, wherein the second block is a third end of the first bus relative to the first end or a fourth end of the second bus relative to the second end.

14. The method of claim 12, wherein the second block is a first non-end of the first bus or a second non-end of the second bus, and the first bus further comprises a third end opposite the first end, the second bus further comprising a fourth end opposite the second end, wherein providing an electric field of the first bus within the first block that is less than an electric field of the first bus within the second block comprises: the electroplating device may be configured to provide a larger gap between the plurality of cathodes on the first end and the third end of the first bus than a gap between the plurality of cathodes on the first non-end, or the electroplating device may be configured to provide a larger gap between the plurality of cathodes on the second end and the fourth end of the second bus than a gap between the plurality of cathodes on the second non-end.

15. The method of claim 12, wherein providing an electric field of the first bus line located within the first block that is smaller than an electric field of the first bus line located within the second block comprises: the electroplating apparatus is provided with gaps between the plurality of cathodes on the second end of the second bus bar being smaller than gaps between the plurality of cathodes on a fourth end of the second bus bar opposite the second end.

16. The method of claim 11, wherein providing an electric field of the first bus line located within the first block that is smaller than an electric field of the first bus line located within the second block comprises: the current of the first block is controlled to be smaller than the current of the second block.

17. The method of claim 16, wherein the second block is a third end of the first bus relative to the first end or a fourth end of the second bus relative to the second end.

18. The method of claim 11, wherein the second block is a first non-end of the first bus or a second non-end of the second bus, and the first bus further comprises a third end opposite the first end, the second bus further comprising a fourth end opposite the second end, wherein providing an electric field of the first bus within the first block that is less than an electric field of the first bus within the second block comprises: the current of the first end and the third end of the first bus is controlled to be smaller than the current of the first non-end, or the current of the second end and the fourth end of the second bus is controlled to be smaller than the current of the second non-end.

19. The method of claim 12, wherein the second bus comprises a fourth end opposite the second end, wherein providing an electric field of the first bus within the first block that is less than an electric field of the first bus within the second block comprises: the electroplating apparatus is provided with gaps between the plurality of cathodes on the second end of the second bus being smaller than gaps between the plurality of cathodes on the fourth end of the second bus.

20. The method of claim 10, wherein the first block comprises a first end of the first bus proximate the included angle and a second end of the second bus proximate the included angle, wherein providing an electric field of the first bus within the first block that is less than an electric field of the first bus within the second block comprises: providing current to the first end of the first bus and not providing current to the second end of the second bus, or providing current to the second end of the second bus and not providing current to the first end of the first bus.