CN114959601A - Binding method of planar target material - Google Patents
Binding method of planar target material Download PDFInfo
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- CN114959601A CN114959601A CN202210649943.1A CN202210649943A CN114959601A CN 114959601 A CN114959601 A CN 114959601A CN 202210649943 A CN202210649943 A CN 202210649943A CN 114959601 A CN114959601 A CN 114959601A
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- back plate
- target
- target blank
- taper hole
- taper
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E30/00—Energy generation of nuclear origin
- Y02E30/10—Nuclear fusion reactors
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Connection Of Plates (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention relates to the technical field of planar target materials, and provides a binding method of a planar target material, which comprises the following steps: s1, respectively forming corresponding taper holes on the connecting surface of the target blank and the connecting surface of the back plate; s2, respectively coating a tin layer on the connecting surface of the target blank and the connecting surface of the back plate; s3, heating the target blank and the back plate, and heating and expanding the taper hole of the target blank and the taper hole of the back plate; s4, inserting one end of the connecting pin into the taper hole of the target blank, and inserting the other end of the connecting pin into the corresponding taper hole on the back plate; and clinging the connecting surface of the target blank to the connecting surface of the back plate; and S5, cooling the target blank and the back plate, shrinking the taper holes of the target blank and the back plate, tensioning the connecting pin, realizing automatic centering of the target blank and the back plate, realizing gradual tensioning, and finally finishing the binding of the planar target. The invention has simple and convenient process, low cost, stable binding and wide application range.
Description
Technical Field
The invention relates to the technical field of planar targets, in particular to a binding method of a planar target.
Background
The existing metal target binding modes comprise electron beam welding, diffusion welding and indium binding, wherein the indium binding has the widest application range. However, the binding mode determined by the rarity of the indium metal is high in manufacturing cost, and liquid indium leaks from the edge of the target material in the binding process, so that the binding rate is low easily. And the strength of the indium-bonded joint is low, generally only 0.8-1 Mpa, and the indium-bonded joint is only suitable for application occasions at the temperature of below 100 ℃. Meanwhile, the adopted indium material is expensive and the cost is very high.
Disclosure of Invention
The invention aims to provide a binding method of a planar target, which has the advantages of simple and convenient process, low cost, stable binding and wide application range.
In order to solve the above technical problem, the present invention provides a method for binding a planar target, comprising the steps of:
s1, respectively forming corresponding taper holes on the connecting surface of the target blank and the connecting surface of the back plate;
s2, respectively coating a tin layer on the connecting surface of the target blank and the connecting surface of the back plate;
s3, heating the target blank and the back plate, and heating and expanding the taper hole of the target blank and the taper hole of the back plate;
s4, inserting one end of the connecting pin into the taper hole of the target blank, and inserting the other end of the connecting pin into the corresponding taper hole on the back plate; and clinging the connecting surface of the target blank to the connecting surface of the back plate;
and S5, cooling the target blank and the back plate, shrinking the taper holes of the target blank and the back plate, tensioning the connecting pin, realizing automatic centering of the target blank and the back plate, realizing gradual tensioning, and finally finishing the binding of the planar target.
Preferably, the conical surface angle of the conical hole is 10-15 degrees; the depth of the taper hole is 1-1.5 mm. More preferably, the taper angle of the taper hole is 11.4 °; the depth of the taper hole is 1 mm.
Preferably, the distance between the taper holes is 30-50 mm; the number of the taper holes is 18-30, the taper holes are divided into a plurality of groups of taper hole groups in an average mode, the taper hole groups are arranged along the radiuses of the target blank and the back plate, and the angle between every two adjacent taper hole groups ranges from 45 degrees to 80 degrees. More preferably, the distance between the taper holes is 40 mm; the number of the taper holes is 24, the 24 taper holes are evenly divided into 6 groups of taper hole groups, the taper hole groups are arranged along the radiuses of the target blank and the back plate, and the angle between the adjacent taper hole groups is 60 degrees.
Preferably, the thickness of the tin layer is 0.08-0.12 mm. More preferably, the tin layer has a thickness of 0.1 mm.
Preferably, the surface of the taper hole is in a rough structure.
Preferably, in step S3, the heating temperature of the target blank and the backing plate is 250 to 350 ℃. More preferably, in step S3, the heating temperature of the target blank and the backing plate is set to 300 ℃.
Preferably, in step S4, the target and the backing plate are cooled at a rate of 60 ℃ per hour.
The invention has the following beneficial effects:
1. the invention removes indium, uses tin to replace the indium, and the mass of the tin used in the same size is equal to indium 1/5, thus saving 95% of the solder cost.
2. The tin is used for electric conduction and heat conduction, so that even if the target blank and the back plate have some inevitable flatness problems in the processing process, the two surfaces can be fully contacted and attached under the action of the tin, and the melting point of the tin is 231 ℃, is higher than the melting point of indium, namely 156 ℃, and has good temperature resistance.
3. The taper hole processing method is quick, simple and convenient, less in quantity, low in required processing tolerance requirement, easy to realize batch manufacturing, and capable of improving the binding efficiency and reducing the binding cost.
4. The connecting pin is made of 304 stainless steel or oxygen-free copper, has a connecting effect, is easy to obtain and cheap in material, can be manufactured in batches as a standard part, and is high in interchangeability.
5. The binding strength of the invention is high, and the strength of the material bound by the method needs to reach more than 150Mpa when the material is damaged.
6. The method has low binding requirement on personnel, mainly depends on mechanical assembly, ensures the assembly precision by a machine tool, and has simple operation. And the traditional indium binding mainly depends on manual coating and indium brushing binding, so that a person with a poor skill is easy to fail in binding.
Drawings
Fig. 1 is a flowchart of a bonding method for a planar target according to an embodiment of the present invention;
FIG. 2 is a taper hole profile provided by an embodiment of the present invention;
fig. 3 is a schematic structural diagram of a planar target according to an embodiment of the present invention.
Reference numerals:
1. a target blank; 2. a back plate; 3. a tin layer; 4. connecting pins; 5. and (4) taper holes.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only a part of the embodiments of the present application, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
In the description of the present application, it is to be understood that the terms "center", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", and the like indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience in describing the present application and simplifying the description, but do not indicate or imply that the referred device or element must have a particular orientation, be constructed in a particular orientation, and be operated, and thus should not be construed as limiting the present application.
In the description of the present application, it is to be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meaning of the above terms in the present application can be understood in a specific case by those of ordinary skill in the art.
Referring to fig. 1 to 3, a preferred embodiment of the present invention provides a method for binding a planar target, including the steps of:
s1, respectively forming corresponding taper holes 5 on the connecting surface of the target blank 1 and the connecting surface of the back plate 2;
s2, respectively coating a tin layer 3 on the connecting surface of the target blank 1 and the connecting surface of the back plate 2;
s3, heating the target blank 1 and the back plate 2, and heating the taper hole 5 of the target blank 1 and the taper hole 5 of the back plate 2 to expand;
s4, inserting one end of the connecting pin 4 into the taper hole 5 of the target blank 1, and inserting the other end of the connecting pin into the corresponding taper hole 5 on the back plate 2; and the connecting surface of the target blank 1 is clung to the connecting surface of the back plate 2;
and S5, cooling the target blank 1 and the back plate 2, shrinking the taper holes 5 of the target blank 1 and the back plate 2, tensioning the connecting pins 4, realizing automatic centering of the target blank 1 and the back plate 2, realizing gradual tensioning, and finally finishing the binding of the planar target.
In some preferred embodiments of the invention, the conical surface angle of the conical hole 5 is 10-15 degrees; the depth of the taper hole 5 is 1-1.5 mm. In some preferred embodiments of the present invention, the taper angle of the tapered bore 5 is 11.4 °; the depth of the taper hole 5 is 1 mm. The depth of the hole is set to be 1mm, the aim is to design and select the pin within the depth range of 1-1.5 mm through the strength calculation of the pin on the premise of not influencing the material strength of the back plate 2 and the target blank 1, and the mechanical strength of the pin can be influenced if the pin is too short. After checking, the hole depth is set to 1 mm.
In some preferred embodiments of the invention, the distance a between the taper holes 5 is 30-50 mm; the number of the taper holes 5 is 18-30, the taper holes 5 are divided into a plurality of groups of taper holes 5, the groups of the taper holes 5 are arranged along the radiuses of the target blank 1 and the back plate 2, and the angle b between the adjacent groups of the taper holes 5 is 45-80 degrees. In some preferred embodiments of the present invention, the distance a between the taper holes 5 is 40 mm; the number of the taper holes 5 is 24, the 24 taper holes 5 are divided into 6 groups of taper holes 5, the groups of taper holes 5 are arranged along the radius of the target blank 1 and the backing plate 2, and the angle b between the adjacent groups of taper holes 5 is 60 degrees. Too close a hole spacing can result in too many holes being machined, affecting the strength of the material itself. Too sparse provides insufficient joint strength. The small diameter of the taper hole 5 is set to be within a tolerance of +/-0.05 mm.
In some preferred embodiments of the present invention, the tin layer 3 has a thickness of 0.08 to 0.12 mm. In some preferred embodiments of the invention, the tin layer 3 has a thickness of 0.1 mm. The tin layer 3 is only for enhancing the electric conduction and the electric conductivity, does not play a role of binding connection, and is not suitable to be too thick.
In some preferred embodiments of the present invention, the surface of the taper hole 5 is rough. The processing of taper hole 5 can use the customization profile modeling diamond cutter, and taper hole 5 surface roughness can guarantee about Ra6.3, and rougher surface provides sufficient frictional force more easily and makes pin and backplate 2 connect closely.
In some preferred embodiments of the present invention, in step S3, the target blank 1 and the backing plate 2 are heated to a temperature of 250 to 350 ℃. In some preferred embodiments of the present invention, the heating temperature of the target blank 1 and the backing plate 2 is set to 300 ℃ in step S3. And providing pre-tightening force between the target blank 1 and the back plate 2, and calculating the pre-tightening force to be 1000 Kg/pin according to the interference magnitude. 24000Kg pretightening force provided by 24 groups of pins in total is evenly distributed on the area of the target with the diameter of 300mm, which is equivalent to 240000N/(300H 300/4/'3.14/1000000)' square meter of 24000/0.07065pa of 3.3 MPa. The pre-tightening force is a force for tightening the target blank 1 and the back plate 2, and aims to ensure that two connecting surfaces are tightly attached.
It should be noted that the interference calculation is an existing pretightening force calculation method, and the interference refers to a relationship between mutually combined hole and shaft tolerance zones with the same basic size. The degree of tightness of the bonding is determined. The algebraic difference of the hole size minus the mating shaft size is called positive clearance, negative interference, or negative clearance. And (4) interference fit. The tolerance band of the bore is below the tolerance band of the shaft with an interference (including a minimum interference equal to zero) fit. In the interference fit, since the shaft is larger than the hole, it is necessary to assemble the shaft by pressing, expansion with heat, contraction with cold, or the like. The interference fit is mainly used for fastening connection without relative movement among hole shafts. The detailed description of the calculation process is omitted here.
In practice the two materials need to be separated, either by reheating above 300 c or by achieving mechanical failure after reaching the upper yield strength limit of the lower strength material of the pin and back plate 2. Generally, the yield strength of oxygen-free copper is 150MPa, and the yield strength of 304 stainless steel material used for manufacturing the pin is 345 MPa.
In some preferred embodiments of the present invention, in step S4, the target and the backing plate 2 are cooled at a rate of 60 ℃ per hour.
To sum up, a preferred embodiment of the present invention provides a method for binding a planar target, which is compared with the prior art:
1. the invention removes indium, uses tin to replace the indium, uses the same mass of tin as indium 1/5 with the same size, and can save 95% of the solder cost.
2. The tin is used for electric conduction and heat conduction, so that even if the target blank 1 and the back plate 2 have some inevitable flatness problems in the processing process, the two surfaces can be fully contacted and attached under the action of the tin, and the melting point of the tin is 231 ℃, is higher than the melting point of indium, namely 156 ℃, and has good temperature resistance.
3. The processing process of the taper holes 5 is rapid, simple and convenient, the quantity is small, the required processing tolerance requirement is not high, the batch production is easy to realize, the binding efficiency is improved, and the binding cost is reduced.
4. The connecting pin 4 is made of 304 stainless steel or oxygen-free copper, has a connecting effect, is easy to obtain and cheap in material, can be manufactured in batches as a standard part, and is high in interchangeability.
5. The binding strength of the invention is high, and the strength of the material bound by the method needs to reach more than 150Mpa when the material is damaged.
6. The method has low binding requirement on personnel, mainly depends on mechanical assembly, ensures the assembly precision by a machine tool, and has simple operation. And the traditional indium binding mainly depends on manual coating and indium brushing binding, so that a person with a poor skill is easy to fail in binding.
The above description is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and substitutions can be made without departing from the technical principle of the present invention, and these modifications and substitutions should also be regarded as the protection scope of the present invention.
Claims (7)
1. A method for binding a planar target material is characterized by comprising the following steps:
s1, respectively forming corresponding taper holes on the connecting surface of the target blank and the connecting surface of the back plate;
s2, respectively coating a tin layer on the connecting surface of the target blank and the connecting surface of the back plate;
s3, heating the target blank and the back plate, and heating and expanding the taper hole of the target blank and the taper hole of the back plate;
s4, inserting one end of the connecting pin into the taper hole of the target blank, and inserting the other end of the connecting pin into the corresponding taper hole on the back plate; and clinging the connecting surface of the target blank to the connecting surface of the back plate;
and S5, cooling the target blank and the back plate, shrinking the taper holes of the target blank and the back plate, tensioning the connecting pin, realizing automatic centering of the target blank and the back plate, realizing gradual tensioning, and finally finishing the binding of the planar target.
2. The method for bonding planar targets according to claim 1, wherein: the conical surface angle of the conical hole is 10-15 degrees; the depth of the taper hole is 1-1.5 mm.
3. The method of claim 1, wherein the bonding of the planar target comprises: the distance between the taper holes is 30-50 mm; the number of the taper holes is 18-30, the taper holes are divided into a plurality of groups of taper hole groups in an average mode, the taper hole groups are arranged along the radiuses of the target blank and the back plate, and the angle between every two adjacent taper hole groups ranges from 45 degrees to 80 degrees.
4. The method of claim 1, wherein the bonding of the planar target comprises: the thickness of the tin layer is 0.08-0.12 mm.
5. The method of claim 1, wherein the bonding of the planar target comprises: the surface of the taper hole is of a rough structure.
6. The method of claim 1, wherein the bonding of the planar target comprises: in step S3, the heating temperature of the target blank and the backing plate is set to 250 to 350 ℃.
7. The method of claim 1, wherein the bonding of the planar target comprises: in step S4, the target and the backing plate are cooled at a rate of 60 ℃ per hour.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210649943.1A CN114959601B (en) | 2022-06-09 | 2022-06-09 | Binding method of planar target |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210649943.1A CN114959601B (en) | 2022-06-09 | 2022-06-09 | Binding method of planar target |
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| CN114959601A true CN114959601A (en) | 2022-08-30 |
| CN114959601B CN114959601B (en) | 2023-09-29 |
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Citations (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07109568A (en) * | 1993-10-08 | 1995-04-25 | Anelva Corp | Target for sputtering device |
| US6419806B1 (en) * | 1998-12-03 | 2002-07-16 | Tosoh Smd, Inc. | Insert target assembly and method of making same |
| CN1904131A (en) * | 2005-07-27 | 2007-01-31 | 应用材料公司 | Controllable target cooling |
| CN201785479U (en) * | 2010-01-27 | 2011-04-06 | 深圳新南亚技术开发有限公司 | Improved flat target |
| CN203765207U (en) * | 2013-12-30 | 2014-08-13 | 有研亿金新材料股份有限公司 | Target blank and backboard assembly structure |
| CN109023269A (en) * | 2018-09-29 | 2018-12-18 | 福建阿石创新材料股份有限公司 | A kind of production method of target |
| CN109136868A (en) * | 2018-09-13 | 2019-01-04 | 先导薄膜材料（广东）有限公司 | The binding method of ITO target or other ceramic targets |
| CN110923643A (en) * | 2019-12-30 | 2020-03-27 | 福建阿石创新材料股份有限公司 | Binding method of planar target material |
| CN111455335A (en) * | 2020-04-24 | 2020-07-28 | 河北恒博新材料科技股份有限公司 | Binding method of planar target material |
| CN112063977A (en) * | 2020-09-18 | 2020-12-11 | 长沙神弧离子镀膜有限公司 | High-scandium aluminum-scandium alloy target and target binding method thereof |
| CN213596390U (en) * | 2020-11-30 | 2021-07-02 | 深圳市端天科技有限公司 | Binding device for vacuum magnetron sputtering coating target material |
| WO2021169418A1 (en) * | 2020-02-25 | 2021-09-02 | 基迈克材料科技（苏州）有限公司 | Itio rotary target and preparation method therefor |
| CN215103499U (en) * | 2021-04-19 | 2021-12-10 | 宁波江丰电子材料股份有限公司 | Target backboard |
| CN215251133U (en) * | 2021-05-13 | 2021-12-21 | 深圳市千禾盛科技有限公司 | Metal target |
-
2022
- 2022-06-09 CN CN202210649943.1A patent/CN114959601B/en active Active
Patent Citations (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07109568A (en) * | 1993-10-08 | 1995-04-25 | Anelva Corp | Target for sputtering device |
| US6419806B1 (en) * | 1998-12-03 | 2002-07-16 | Tosoh Smd, Inc. | Insert target assembly and method of making same |
| CN1904131A (en) * | 2005-07-27 | 2007-01-31 | 应用材料公司 | Controllable target cooling |
| CN201785479U (en) * | 2010-01-27 | 2011-04-06 | 深圳新南亚技术开发有限公司 | Improved flat target |
| CN203765207U (en) * | 2013-12-30 | 2014-08-13 | 有研亿金新材料股份有限公司 | Target blank and backboard assembly structure |
| CN109136868A (en) * | 2018-09-13 | 2019-01-04 | 先导薄膜材料（广东）有限公司 | The binding method of ITO target or other ceramic targets |
| CN109023269A (en) * | 2018-09-29 | 2018-12-18 | 福建阿石创新材料股份有限公司 | A kind of production method of target |
| CN110923643A (en) * | 2019-12-30 | 2020-03-27 | 福建阿石创新材料股份有限公司 | Binding method of planar target material |
| WO2021169418A1 (en) * | 2020-02-25 | 2021-09-02 | 基迈克材料科技（苏州）有限公司 | Itio rotary target and preparation method therefor |
| CN111455335A (en) * | 2020-04-24 | 2020-07-28 | 河北恒博新材料科技股份有限公司 | Binding method of planar target material |
| CN112063977A (en) * | 2020-09-18 | 2020-12-11 | 长沙神弧离子镀膜有限公司 | High-scandium aluminum-scandium alloy target and target binding method thereof |
| CN213596390U (en) * | 2020-11-30 | 2021-07-02 | 深圳市端天科技有限公司 | Binding device for vacuum magnetron sputtering coating target material |
| CN215103499U (en) * | 2021-04-19 | 2021-12-10 | 宁波江丰电子材料股份有限公司 | Target backboard |
| CN215251133U (en) * | 2021-05-13 | 2021-12-21 | 深圳市千禾盛科技有限公司 | Metal target |
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