CN114951868A - Semiconductor welding method - Google Patents
Semiconductor welding method Download PDFInfo
- Publication number
- CN114951868A CN114951868A CN202110198805.1A CN202110198805A CN114951868A CN 114951868 A CN114951868 A CN 114951868A CN 202110198805 A CN202110198805 A CN 202110198805A CN 114951868 A CN114951868 A CN 114951868A
- Authority
- CN
- China
- Prior art keywords
- solder
- pad
- welding
- semiconductor
- xenon lamp
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 29
- 238000000034 method Methods 0.000 title claims abstract description 23
- 238000003466 welding Methods 0.000 title abstract description 47
- 229910000679 solder Inorganic materials 0.000 claims abstract description 57
- 238000002844 melting Methods 0.000 claims abstract description 6
- 230000008018 melting Effects 0.000 claims abstract description 6
- 239000011248 coating agent Substances 0.000 claims abstract description 4
- 238000000576 coating method Methods 0.000 claims abstract description 4
- 229910052724 xenon Inorganic materials 0.000 claims description 17
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 claims description 17
- 238000005476 soldering Methods 0.000 claims description 5
- 230000001678 irradiating effect Effects 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 230000004907 flux Effects 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/005—Soldering by means of radiant energy
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/20—Preliminary treatment of work or areas to be soldered, e.g. in respect of a galvanic coating
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K3/00—Tools, devices, or special appurtenances for soldering, e.g. brazing, or unsoldering, not specially adapted for particular methods
- B23K3/04—Heating appliances
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K3/00—Tools, devices, or special appurtenances for soldering, e.g. brazing, or unsoldering, not specially adapted for particular methods
- B23K3/08—Auxiliary devices therefor
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
Abstract
The semiconductor welding method of the invention comprises the following steps: coating solder on the first bonding pad; the second pad contacts one side of the solder on the first pad from a predetermined direction to form a contact surface; preheating the solder; placing a solder ball between the first pad and the second pad at a position corresponding to the solder; and melting the solder balls. The method has simple and convenient welding and high welding reliability, and is particularly suitable for welding small-sized semiconductors.
Description
Technical Field
The invention relates to the field of semiconductor manufacturing, in particular to a semiconductor welding method.
Background
In the semiconductor field, a gold wire or a gold ball is generally disposed between two bonding pads and bonded by ultrasonic or laser welding. With the development of semiconductor technology, the volume of the semiconductor is gradually reduced and the function is gradually increased, so that the size of a bonding pad for bonding is also reduced, the bonding space/interval is narrowed, the bonding difficulty is increased, and adverse effects such as: when ultrasonic welding is adopted, under the condition that the front end of an ultrasonic oscillator presses a bonding pad, a large ultrasonic oscillator is used for ultrasonic wave pressure welding of a plurality of bonding pads together, and the uniformity and reliability of pressure welding of each bonding pad have problems; the operation difficulty of the large ultrasonic oscillator between small-size bonding pads is extremely high; when laser welding is adopted, because the contact surface can not be ensured, the molten solder side flow easily causes the phenomenon of desoldering, and the welding reliability can not be ensured.
Accordingly, there is a need for an improved welding method that overcomes the above-mentioned deficiencies.
Disclosure of Invention
The invention aims to provide a semiconductor welding method which is simple and convenient in welding, has high welding reliability and is particularly suitable for welding small-sized semiconductors.
To achieve the above object, a method for bonding a semiconductor of the present invention includes:
coating solder on the first bonding pad;
the second pad contacts one side of the solder on the first pad from a preset direction to form a contact surface;
preheating the solder;
placing a solder ball between the first pad and the second pad at a position corresponding to the solder; and
melting the solder balls.
Compared with the prior art, the semiconductor welding method firstly forms a contact surface between the two welding pads before formal welding, and when the welding is carried out, the welding flux is preheated and softened firstly, and then the welding balls are configured, so that even if the welding space/interval is narrowed, the two welding pads can firstly complete conduction and pre-welding through the contact surface. And then the solder is melted through the heat transfer of the melted solder balls, thereby ensuring the firm and reliable welding between the two semiconductors and avoiding the phenomenon of desoldering caused by the traditional welding. Moreover, the welding method is more suitable for welding small-sized semiconductors and has high adaptability.
Preferably, the predetermined direction is preferably from bottom to top.
Preferably, preheating the solder specifically includes: irradiating the solder by a xenon lamp to soften the solder.
Preferably, the irradiation conditions of the xenon lamp are as follows: the wavelength of the xenon lamp is 300-1000nm, and the heat energy is 10-25 megajoules.
Preferably, melting the solder balls specifically includes: and irradiating the solder ball through a xenon lamp to melt the solder ball.
Preferably, the irradiation conditions of the xenon lamp are as follows: the wavelength of the xenon lamp is 300-1000nm, and the heat energy is 30-50 megajoules.
Detailed Description
The following examples are provided to further illustrate the semiconductor bonding method of the present invention, but the present invention is not limited thereto.
An embodiment of a method of soldering a semiconductor of the present invention includes:
coating solder on the first pad;
the second pad contacts one side of the solder on the first pad from a predetermined direction to form a contact surface;
preheating the solder;
placing a solder ball between the first pad and the second pad at a position corresponding to the solder; and
melting the solder balls.
Specifically, the first pad of the semiconductor to be soldered is coated with solder, preferably tin. Then, a contact surface is formed on the side of the second pad of another semiconductor to be soldered, which is brought into contact with the solder from a predetermined direction, preferably from bottom to top, thereby further ensuring that the first pad and the second pad are brought into contact with each other by the solder. Then, the solder is preheated to soften (rather than melt) the solder, and the solder is irradiated by a xenon lamp, wherein the wavelength of the xenon lamp is 300-1000nm, and the heat energy is 10-25 megajoules. After the solder is softened, a solder ball, such as a solder ball, is placed between two pads (i.e., a first pad and a second pad) of two semiconductors, and the solder ball is irradiated by a xenon lamp to melt the solder ball. Preferably, the wavelength of the xenon lamp used in this case is 300-1000nm, and the heat energy is 30-50 mJ. The melted solder ball gradually transfers heat to the softened solder on the pad, so that the solder is gradually heated and melted, thereby completing the soldering process. Compared with the traditional gold wire laser welding method, the welding method is firmer, and the phenomenon of desoldering caused by gold wire welding is avoided. Moreover, the xenon lamp is adopted to soften the solder and melt the solder balls, the heat control is controllable compared with laser and ultrasonic, the operability is higher, and the cost is lower.
Compared with the prior art, the semiconductor welding method firstly forms a contact surface between the two welding pads before formal welding, and when the welding is carried out, the welding flux is preheated and softened firstly, and then the welding balls are configured, so that even if the welding space/interval is narrowed, the two welding pads can firstly complete conduction and pre-welding through the contact surface. And then the solder is melted through the heat transfer of the melted solder balls, thereby ensuring the firm and reliable welding between the two semiconductors and avoiding the phenomenon of desoldering caused by the traditional welding. Moreover, the welding method is more suitable for welding small-sized semiconductors and has high adaptability.
The above disclosure is only for the purpose of illustrating the preferred embodiments of the present invention, and it is therefore to be understood that the invention is not limited by the scope of the appended claims.
Claims (6)
1. A method of bonding a semiconductor, comprising:
coating solder on the first bonding pad;
the second pad contacts one side of the solder on the first pad from a predetermined direction to form a contact surface;
preheating the solder;
placing a solder ball between the first pad and the second pad at a position corresponding to the solder; and
melting the solder balls.
2. A method of soldering a semiconductor as claimed in claim 1, wherein: the predetermined direction is from bottom to top.
3. A method for soldering a semiconductor according to claim 1, wherein the preheating of the solder specifically comprises: irradiating the solder by a xenon lamp to soften the solder.
4. A method of bonding a semiconductor according to claim 2, wherein: the irradiation conditions of the xenon lamp are as follows: the wavelength of the xenon lamp is 300-1000nm, and the heat energy is 10-25 megajoules.
5. A method of soldering a semiconductor according to claim 1, wherein melting the solder ball specifically includes: and irradiating the solder balls through a xenon lamp to melt the solder balls.
6. A method of bonding a semiconductor according to claim 5, wherein: the irradiation conditions of the xenon lamp are as follows: the wavelength of the xenon lamp is 300-1000nm, and the heat energy is 30-50 megajoules.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110198805.1A CN114951868A (en) | 2021-02-22 | 2021-02-22 | Semiconductor welding method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110198805.1A CN114951868A (en) | 2021-02-22 | 2021-02-22 | Semiconductor welding method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN114951868A true CN114951868A (en) | 2022-08-30 |
Family
ID=82953904
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110198805.1A Pending CN114951868A (en) | 2021-02-22 | 2021-02-22 | Semiconductor welding method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN114951868A (en) |
-
2021
- 2021-02-22 CN CN202110198805.1A patent/CN114951868A/en active Pending
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| PB01 | Publication | ||
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| SE01 | Entry into force of request for substantive examination |