CN114937710A - Transistor type 4H-SiC-based broad spectrum surface plasmon photoelectric detector and preparation method thereof - Google Patents

Transistor type 4H-SiC-based broad spectrum surface plasmon photoelectric detector and preparation method thereof Download PDF

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CN114937710A
CN114937710A CN202210681937.4A CN202210681937A CN114937710A CN 114937710 A CN114937710 A CN 114937710A CN 202210681937 A CN202210681937 A CN 202210681937A CN 114937710 A CN114937710 A CN 114937710A
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sic substrate
surface plasmon
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崔艳霞
樊亚萍
李国辉
王文艳
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Taiyuan University of Technology
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Abstract

The invention belongs to the technical field of semiconductor photoelectric detectors, and particularly relates to a transistor type 4H-SiC-based broad spectrum surface plasmon polariton photoelectric detector and a preparation method thereof. The invention can realize the detection of ultraviolet-visible-near infrared wide-spectrum optical signals with high gain performance.

Description

Transistor type 4H-SiC-based broad spectrum surface plasmon photoelectric detector and preparation method thereof
Technical Field
The invention belongs to the technical field of semiconductor photoelectric detectors, and particularly relates to a transistor type 4H-SiC-based broad spectrum surface plasmon photoelectric detector and a preparation method thereof.
Background
The high-sensitivity wide-spectrum photoelectric detector can realize effective detection of weak light signals and has important application in the fields of national defense monitoring, astronomical observation, production operation, medical detection and the like. The photomultiplier tube (PMT) or Avalanche Photodiode (APD) device has excellent performance in weak light detection and extremely high detection efficiency. However, they need to apply very high voltage when working, the PMT working voltage is 1-3kV, and the APD working voltage is tens to hundreds of volts, both of which face the problem of high power consumption. In addition, the PMT is a vacuum device and also faces the problems of being bulky and not easy to integrate. In contrast, the transistor-type photodetector in a solid form has characteristics of low dark current and high responsivity, and is very suitable for developing a high-sensitivity photodetector for weak light signal detection. In the aspect of material selection, the third generation semiconductor material, silicon carbide (SiC), is a wide band gap semiconductor material and has the advantages of good stability, high electron drift velocity, high thermal conductivity and the like. Compared with the first and second generation semiconductor materials, the SiC material has higher stability under extreme environments such as high temperature, strong radiation and the like. SiC comprises various crystal forms, wherein the wafer quality of 4H-SiC is optimal, and the SiC is more suitable for developing high-performance electronic and optoelectronic devices. In recent years, transistor-type photodetectors based on 4H-SiC have been reported in succession, but they can only detect ultraviolet light. Therefore, the search for a high-sensitivity transistor type 4H-SiC wide-spectrum photoelectric detector has great significance.
Disclosure of Invention
The invention overcomes the defects of the prior art, and solves the technical problems that: the high-sensitivity transistor type 4H-SiC wide-spectrum photoelectric detector and the preparation method thereof are provided, and ultraviolet-visible-near infrared wide-spectrum optical signal detection with high gain performance is realized by introducing a surface plasmon hot carrier effect.
In order to solve the technical problems, the invention adopts the technical scheme that: the transistor type 4H-SiC-based broad spectrum surface plasmon photoelectric detector comprises a 4H-SiC substrate, wherein an Au nano-particle layer is arranged on a silicon surface of the 4H-SiC substrate, the Au nano-particle layer is formed by a plurality of Au nano-particles in island-shaped distribution, a separated semi-transparent source electrode and a separated drain electrode are arranged on the Au nano-particle layer, and an opaque gate electrode is arranged on a carbon surface of the 4H-SiC substrate.
In the Au nanoparticle layer, the island diameter of the Au nanoparticles distributed in an island shape is 120nm +/-40 nm, the island height is 40nm +/-10 nm, and the gap width between the islands is 150nm +/-30 nm.
The source electrode and the drain electrode are parallel square metal electrodes, and the side length of each metal electrode is 230 microns +/-50 microns.
The thickness of the source electrode and the thickness of the drain electrode are both 15nm +/-5 nm, and the distance between the source electrode and the drain electrode is 30 microns +/-10 microns.
The 4H-SiC substrate is semi-insulating, and the resistivity of the 4H-SiC substrate is between 1e13ohm cm and 1e15 ohm cm.
The thickness of the 4H-SiC substrate is 100-1000 mu m, and the thickness of the gate electrode is 100nm +/-20 nm.
The source electrode, the drain electrode and the gate electrode are made of the same material and are made of one of silver, aluminum or gold.
In addition, the invention also provides a preparation method of the transistor type 4H-SiC-based broad spectrum surface plasmon polariton photoelectric detector, which comprises the following steps:
s1, calibrating a carbon surface and a silicon surface of the 4H-SiC substrate through an atomic force microscope, and cleaning and drying the 4H-SiC substrate;
s2, preparing an Au film on one side of the silicon surface of the treated 4H-SiC substrate by a magnetron sputtering method, and then converting the Au film into an Au nanoparticle layer by a thin film thermal annealing process;
s3, arranging a mask on the Au nanoparticle layer, and preparing a source electrode and a drain electrode above the Au nanoparticle layer by adopting a magnetron sputtering method;
and S4, preparing a gate electrode on the carbon surface of the 4H-SiC substrate by adopting a magnetron sputtering method.
In the step S2, the thickness of the prepared Au film is 4nm ± 1nm, and the specific method for converting the Au film into the Au nanoparticle layer by the thin film thermal annealing process includes: and transferring the 4H-SiC substrate plated with the Au thin film into a muffle furnace, raising the temperature to 500 ℃ in the muffle furnace from the room temperature of 3 ℃ per minute, maintaining the temperature for 3 hours, and naturally cooling to the room temperature to form an island-shaped Au nanoparticle layer.
In the step S3, a copper mesh mask is loaded on the 4H-SiC substrate loaded with the Au nanoparticle layer, and then magnetron sputtering is carried out to prepare a source electrode and a drain electrode, wherein the geometric parameters of the copper mesh mask are that the side length of a square grid is 230 microns +/-50 microns, the rib width is 30 +/-10 microns, and the thickness is 20-30 microns.
Compared with the prior art, the invention has the following beneficial effects: the invention provides a transistor type 4H-SiC-based broad spectrum surface plasmon photoelectric detector, which is characterized in that Au nanoparticles are prepared on a silicon surface of a semi-insulating type 4H-SiC substrate, a source electrode and a drain electrode are prepared, a sample is turned over, a gate electrode is prepared on a carbon surface of the semi-insulating type 4H-SiC substrate, a common source connection method is adopted in circuit connection, effective amplification of current signals under ultraviolet-visible-near infrared light irradiation is realized, and the response spectrum of a device is greatly broadened. Based on the semi-insulating property of the 4H-SiC substrate, the drain current (I) of the invention in a dark state D ) Very low, reaching 10fA levels; in addition, the Au nanoparticles are introduced, so that the Au nanoparticles have the capability of efficiently absorbing wide-spectrum incident light, a large number of hot electrons are generated, and the hot electron signals can be injected into the 4H-SiC substrate across a potential barrier to cause the change of the conductivity distribution in the 4H-SiC substrate. Furthermore, the invention is based on the principle of transistor operation, due to the current (I) between the gate and the source GS ) Far larger than the current (I) between the source and the drain SD ) The bright current is significantly amplified. The invention can change the illumination condition and the grid and source bias voltage and effectively regulate and control the output characteristic of the detector. When V is GS 10V and V SD When the voltage is 20V, the device realizes the responsivity of more than 10A/W in the wide spectral range of 300-850nm, wherein the responsivity of the device is as high as 10 at the wavelength of ultraviolet 300nm 3 A/W. The weakest detectable optical power density of the device is close to nW/cm at the wavelength of 375nm 2 . Therefore, the invention can realize the detection of ultraviolet-visible-near infrared broad spectrum optical signals with high gain performance.
Drawings
Fig. 1 is a schematic structural diagram of a transistor-type 4H-SiC-based broad spectrum surface plasmon polariton photodetector according to an embodiment of the present invention, in which: 1-4H-SiC substrate, 2-Au nanoparticle layer, 3-source electrode, 4-drain electrode, 5-gate electrode.
Fig. 2 is a microscopic topography (a) and a thermal electron injection principle (b) of an Au nanoparticle layer of a transistor type 4H-SiC based broadband surface plasmon polariton photodetector provided by the present invention.
FIG. 3 shows a transistor type 4H-SiC-based broad spectrum surface plasmon polariton photodetector provided by the invention at V GS Is 10V, V SD A circuit schematic diagram at 20V.
FIG. 4 shows a transistor type 4H-SiC-based broad spectrum surface plasmon polariton photodetector provided by the invention at V GS When changing from-10V to 10V, drain current I in dark state D Following V SD A graph of the variation relationship of (c).
FIG. 5 shows a transistor type 4H-SiC-based broad spectrum surface plasmon polariton photodetector provided by the invention at V GS When the voltage is changed from-10V to 10V, the drain current I is in a bright state D Following V SD (ii), (a) lighting conditions: wavelength 375nm and power density 10.2mW/cm 2 (ii) a (b) The illumination condition is as follows: the wavelength is 565nm, and the power density is 10.2mW/cm 2 (ii) a (c) The illumination condition is as follows: wavelength of 850nm and power density of 10.2mW/cm 2 。
FIG. 6 shows the relationship between a transistor-type 4H-SiC-based broad spectrum surface plasmon polariton photodetector and a control device (transistor device without gold particles) in V GS Drain current I in bright state at 10V D Following V SD The light condition in the bright current test: wavelength 375nm and power density 10.2mW/cm 2 。
Fig. 7 shows dark current and bright current of devices at two ends of a transistor-type 4H-SiC based broadband surface plasmon polariton photodetector provided by the present invention when a gate is in a suspended state, and illumination conditions during a bright current test: wavelength 375nm and power density 10.2mW/cm 2 。
FIG. 8 shows a 300nm-850nm wave of a transistor-type 4H-SiC-based broad-spectrum surface plasmon polariton photodetector provided by the inventionResponsivity spectrum over long range, bias conditions: v GS 10V and V SD When the voltage is 9V, the illumination condition is as follows: the xenon lamp light source is additionally provided with a monochromator to generate monochromatic light with the power density of mu W/cm 2 And (4) horizontal.
Fig. 9 is a linear dynamic range performance diagram of a transistor-type 4H-SiC-based broad spectrum surface plasmon polariton photodetector provided by the present invention at a wavelength of 375nm, and bias conditions during testing: v GS 10V and V SD ＝20V。
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below, and it is obvious that the described embodiments are some embodiments of the present invention, but not all embodiments; all other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Example one
As shown in fig. 1, a transistor-type 4H-SiC-based broad spectrum surface plasmon polariton photodetector is provided in an embodiment of the present invention, and includes a 4H-SiC substrate 1, an Au nanoparticle layer 2 is disposed on a silicon surface of the 4H-SiC substrate 1, the Au nanoparticle layer 2 is formed by a plurality of Au nanoparticles in an island-like distribution, a separated semi-transparent source electrode 3 and a separated semi-transparent drain electrode 4 are disposed on the Au nanoparticle layer 2, and an opaque gate electrode 5 is disposed on a carbon surface of the 4H-SiC substrate 1.
Specifically, in this embodiment, the source electrode 3 is grounded, the drain electrode 4 and the gate electrode 5 are respectively connected to one of two power sources commonly grounded, and a bright current signal is output between the drain electrode 5 and the source electrode 3. Specifically, in this embodiment, the drain electrode 3 and the gate electrode 4 may be connected to the anodes of two channels of the B2902 power supply, respectively.
Further, in this embodiment, an Au film is first prepared on the silicon surface of the 4H — SiC, and then the Au nanoparticle layer 2 with randomly distributed Au nanoparticles is obtained by annealing, and the SEM morphology thereof is shown in fig. 2 (a). The Au nanoparticle layer has the ability to efficiently absorb wide-spectrum incident light,capable of generating a large number of hot electrons, which can cross the potential barrier
Figure BDA0003698717310000041
And is injected into the 4H-SiC, and the specific process is shown in FIG. 2(b), thereby causing the conductivity distribution in the 4H-SiC to change. The change in conductivity in 4H-SiC is a prerequisite for the subsequent transistor amplification behavior.
Specifically, in this embodiment, the thickness of the Au film before annealing is 4nm ± 1nm, the temperature for preparing Au nanoparticles by annealing is 500 ℃ ± 50 ℃, the prepared Au nanoparticles are island-shaped, the diameter of the island is 120nm ± 40nm, the height of the island is 40nm ± 10nm, and the width of the gap between the islands is 150nm ± 30 nm.
Preferably, in this embodiment, the thickness of the Au film before annealing is 4nm ± 0.2nm, the temperature for preparing Au nanoparticles by annealing is 500 ℃ ± 5 ℃, the prepared Au nanoparticles are island-shaped, the island diameter is 120nm ± 2nm, the island height is 40nm ± 1nm, and the gap width between the islands is 150nm ± 2 nm.
Further, in this embodiment, after a copper mesh mask is loaded on the Au nanoparticle layer 2, a square electrode that can be used as a source electrode and a drain electrode is prepared by using a magnetron sputtering technique, and any two opposite electrodes can be used as the source electrode and the drain electrode, respectively. And no mask is loaded when the bottom gate electrode is manufactured. In a specific test process, the device adopts a common source connection method as shown in fig. 3, and a source is grounded.
Specifically, in this embodiment, the source electrode and the drain electrode are square electrodes with a side length of 230 μm ± 50 μm, the thickness of the source electrode and the drain electrode is 15nm ± 5nm, and the distance between the source electrode and the drain electrode is 30 μm ± 10 μm.
Preferably, in this embodiment, the source electrode and the drain electrode are square electrodes with a side length of 230 μm ± 1 μm, the thickness of the source electrode and the drain electrode is 15nm ± 1nm, and the distance between the source electrode and the drain electrode is 30 μm ± 1 μm.
Further, in the present embodiment, the 4H — SiC substrate is a semi-insulating type, is a weak n-type, and has a resistivity of 1e13ohm cm to 1e15 ohm cm.
Preferably, in the embodiment, the 4H-SiC substrate is semi-insulating, weak n-type, and has a resistivity of 5e13ohm cm to 5e14 ohm cm.
Further, in the embodiment, the thickness of the 4H-SiC substrate is 100-1000 μm, and the thickness of the gate electrode is 100nm +/-20 nm.
Preferably, in the embodiment, the thickness of the 4H-SiC substrate is 500 μm +/-20 μm, and the thickness of the gate electrode is 100nm +/-5 nm.
In this embodiment, the gate electrode, the source electrode, and the drain electrode are made of the same material, and are made of silver (Ag), aluminum (Al), or gold (Au).
Preferably, in this embodiment, the gate electrode, the source electrode, and the drain electrode are made of the same material, and are all silver (Ag).
The invention provides a transistor type 4H-SiC-based broadband surface plasmon photoelectric detector, which realizes effective amplification of current signals under irradiation of ultraviolet-visible-near infrared light and greatly widens the response spectrum of the device. The Au nanoparticles introduced into the device absorb light to generate hot electron injection behavior, so that the conductivity distribution in the 4H-SiC is changed. Further, based on the transistor operating principle, due to the current (I) between the gate electrode and the source electrode GS ) Much larger than the current (I) between the source and drain electrodes SD ) The bright current is significantly amplified. The invention can effectively regulate and control the output characteristics of the transistor by changing the illumination condition and the bias voltage of the gate electrode and the source electrode. When the voltage between the gate electrode and the source electrode is V GS 10V and the voltage V between the source and drain electrodes SD When the voltage is 20V, the invention realizes the responsivity of more than 10A/W in the wide spectral range of 300-850nm, wherein the responsivity of the device is as high as 10 at the wavelength of ultraviolet 300nm 3 A/W。
Example two
The second embodiment of the invention provides a preparation method of a transistor type 4H-SiC-based broad spectrum surface plasmon polariton photoelectric detector, and the second embodiment of the invention adopts the following materials:
4H-SiC substrate, Ag target, Au target, deionized water, nitric acid, detergent, deionized water, acetone, absolute ethyl alcohol and copper mesh mask. The combined dosage and screening criteria were as follows:
4H-SiC substrate: semi-insulating type, weak n type, with resistivity of 1e14 ohm cm, area of 20mm × 20mm, and thickness of 500 μm;
ag target material: solid, copper backplane bound, 99.999% purity;
au target material: solid, copper backplane binding, 99.999% purity;
deionized water: h 2 O 8000mL±50mL；
Nitric acid: HNO 3 ，68％
Liquid detergent: 2 plus or minus 0.5 mL;
acetone: CH (CH) 3 COCH 3 250mL±5mL；
Anhydrous ethanol: c 2 H 5 OH 500mL±5mL；
Copper mesh mask: copper; the side length of the square grid is 230 mu m, the rib width is 30 mu m, and the thickness is 20-30 mu m.
The preparation method of the transistor type 4H-SiC based broad spectrum surface plasmon polariton photodetector provided by the embodiment specifically comprises the following steps:
s1, calibrating a carbon surface and a silicon surface of the 4H-SiC substrate through an atomic force microscope, and cleaning and drying the 4H-SiC substrate;
in step S1, the method for cleaning the 4H-SiC substrate includes:
s101, putting a 4H-SiC substrate into a polytetrafluoroethylene beaker, adding concentrated nitric acid into the polytetrafluoroethylene beaker, covering the opening of the beaker with aluminum foil paper, soaking for more than 20min by ultrasonic waves, taking out the 4H-SiC substrate, washing the 4H-SiC substrate with clear water, and removing residual solution;
s102, coating detergent on the surface of the slice, repeatedly rubbing and cleaning the 4H-SiC substrate under water flow until the 4H-SiC substrate is washed by clean water, and forming a uniform water film on the surface of the 4H-SiC substrate.
S103, vertically placing the scrubbed 4H-SiC substrate on a beaker frame in a glass beaker, and sequentially adding deionized water, acetone, absolute ethyl alcohol and isopropanol into the beaker for ultrasonic treatment for 15 min. Finally, the cleaned 4H-SiC substrate was stored in isopropanol for use.
S2, preparing an Au film on one side of the silicon surface of the treated 4H-SiC substrate through a magnetron sputtering method, and then converting the Au film into an Au nanoparticle layer through a thin film thermal annealing process.
The method specifically comprises the following steps:
s201, turning on a power supply of the magnetron sputtering coating machine, inflating the cabin body, turning on the cabin door, and mounting the Au target on a target head of the magnetron sputtering coating machine.
S202, transferring the cleaned 4H-SiC substrate into a magnetron sputtering cavity, placing the Si surface side downwards on a sample support of a magnetron sputtering coating machine, and adjusting parameters to enable the 4H-SiC substrate to be positioned right above a target. A layer of gold film with the thickness of 4nm is sputtered on one side of the silicon surface of the silicon carbide at the speed of 0.1 nm/s.
S203, closing the magnetron sputtering cabin door, clicking one key to start, simultaneously opening the vacuum gauge, and reducing the pressure of the cabin body to 10 -4 And when the pressure is Pa, opening an argon ionization valve, an argon channel power supply and a valve switch, and adjusting the pressure of the cavity to maintain the pressure at 2 Pa.
And S204, opening the film thickness detector to find corresponding parameters. And turning on a sputtering power supply, adjusting the required power, clicking a start key, and adjusting the pressure intensity of the cavity after starting to achieve the optimal sputtering rate. In order to ensure the sputtering quality, the pre-sputtering is firstly carried out, after the pre-sputtering is finished, the large baffle is opened, and after the required thickness is reached, the large baffle, the sputtering power supply, the argon ionization valve, the channel switch and the film thickness detector are sequentially closed.
And S205, stopping by one key, closing the vacuum gauge to inflate the cabin body after the equipment stops working, opening the cabin door, and taking out the 4H-SiC substrate plated with the Au thin film.
S206, transferring the 4H-SiC substrate plated with the Au thin film into a muffle furnace, raising the temperature to 500 ℃ in the muffle furnace from the room temperature of 3 ℃ per minute, maintaining the temperature for 3 hours, and naturally cooling to the room temperature to form an island-shaped Au nanoparticle layer.
And S3, arranging a mask on the Au nanoparticle layer, and preparing a source electrode and a drain electrode above the Au nanoparticle layer by adopting a magnetron sputtering method.
The specific method of step S3 is as follows:
s301, mounting the Ag target on a target head of a magnetron sputtering coating machine.
S302, adhering a metal mask plate to one side of the prepared Au nanoparticle layer of the 4H-SiC substrate, loading the metal mask plate on a sample tray of a magnetron sputtering coating machine, wherein one side of the mask plate faces downwards, and adjusting the sample tray to enable the 4H-SiC substrate to be positioned right above the Ag target.
S303, closing the magnetron sputtering cabin door, opening and zeroing a vacuum gauge, opening a mechanical pump and a pre-pumping valve on a display screen, closing the pre-pumping valve when the pressure is reduced to 30Pa, opening a gate valve and a molecular pump, and enabling the pressure of the cabin body to reach 10 DEG C -4 And when Pa, opening an argon ionization valve and an argon channel power supply.
S304, opening an argon magnetic control valve, a mechanical valve and a flowmeter in sequence, selecting proper argon flow, and then adjusting a gate valve of the molecular pump to maintain the pressure of the cavity at 2 Pa.
S305, turning on a sputtering power supply, adjusting the power required by sputtering, and after starting, further adjusting the pressure through a gate valve to enable the sputtering rate to meet the film forming requirement. The pre-sputtering is carried out for 10 minutes, and then the formal sputtering is carried out. When the required film thickness is reached, the large baffle is closed, then the radio frequency sputtering power supply is closed, the sample is taken out from the film coating chamber, and the metal mask is dismounted.
The copper mesh mask plate can be selected specifically, and the geometric parameters of the copper mesh mask plate are that the side length of a square grid is 230 microns +/-50 microns, the rib width is 30 +/-10 microns, and the thickness is 20-30 microns. In this embodiment, a plurality of electrodes may be prepared on the Au nanoparticle layer by using a copper mesh mask, and two adjacent electrodes thereof may be used as the source electrode and the drain electrode, respectively.
And S4, preparing a gate electrode on one side of the carbon surface of the cleaned 4H-SiC substrate by adopting a magnetron sputtering method.
The specific method of step S4 is as follows:
s401, mounting the Ag target on a target head of a magnetron sputtering coating machine.
S402, turning over the prepared samples of the source electrode and the drain electrode, enabling one side of the carbon surface of the 4H-SiC substrate to face downwards, loading the samples on a sample tray of a magnetron sputtering film plating machine, and adjusting the sample tray without loading a mask plate to enable the 4H-SiC substrate to be located right above the Ag target.
S403, closing the magnetron sputtering cabin door, opening and zeroing a vacuum gauge, opening a mechanical pump and a pre-pumping valve on the display screen, closing the pre-pumping valve when the pressure is reduced to 30Pa, opening a gate valve and a molecular pump, and opening an argon ionization valve and an argon channel power supply when the cabin pressure reaches 10-4 Pa.
S404, sequentially opening an argon magnetic control valve, a mechanical valve and a flowmeter, selecting proper argon flow, and then adjusting a gate valve of the molecular pump to maintain the pressure of the cavity at 2 Pa.
S405, turning on a sputtering power supply, adjusting the power required by sputtering, and after starting, further adjusting the pressure through a gate valve to enable the sputtering rate to meet the film forming requirement. The pre-sputtering is carried out for 10 minutes, and then the formal sputtering is carried out. When the required film thickness is reached, the large baffle is closed, then the radio frequency sputtering power supply is closed, the sample is taken out from the film coating chamber, and the sample is collected, namely the transistor type 4H-SiC based broad spectrum surface plasmon photoelectric detector.
Detection, analysis and characterization: and detecting, analyzing and characterizing the performance of the prepared transistor type 4H-SiC-based broad spectrum surface plasmon polariton photoelectric detector.
Measuring a current-voltage characteristic curve of the transistor type 4H-SiC-based broad spectrum surface plasmon polariton photoelectric detector in a dark state by adopting a high-precision digital source meter agent B1500; the Thorlabs 375nm LED is used as a light source, and an Agilent B2902 is used for characterizing a bright-state current-voltage characteristic curve of the transistor type 4H-SiC-based broad spectrum surface plasmon polariton photoelectric detector. During transistor testing, the circuit connection adopts a common source connection method, as shown in fig. 3. And measuring current-voltage characteristic curves of the devices at two ends in a dark state and a bright state by adopting a high-precision digital source meter agent B1500. And obtaining a monochromatic light source by using a xenon lamp and a monochromator, irradiating the collimated light source on the surface of a sample, testing a bright-state current-voltage characteristic curve of the transistor device under different wavelengths by using an Agilent B2902, and drawing a response rate graph of the device based on the curve. And adjusting the light power irradiated to the effective area of the device by using an attenuation sheet, testing a bright-state current-voltage characteristic curve under different light powers by using an Agilent B2902, and drawing a linear dynamic range diagram of the device based on the bright-state current-voltage characteristic curve.
And (4) conclusion: the current-voltage characteristics of the transistor type 4H-SiC-based broad spectrum surface plasmon polariton photoelectric detector in a dark state and a bright state are analyzed. Specifically, the source and drain electrodes were made of Ag having a thickness of 15nm, the gate electrode was made of Ag having a thickness of 100nm, and the Au film for annealing to form the Au nanoparticle layer was made of Ag having a thickness of 4 nm.
The SEM topography of the Au nanoparticles formed by annealing is given in fig. 2 (a). FIG. 2(b) shows a schematic diagram of the injection of thermal electrons generated by the excitation of surface plasmons by Au nanoparticles, which can efficiently absorb incident light and then generate a large number of thermal electrons across a potential barrier
Figure BDA0003698717310000091
The high-conductivity graphene enters a 4H-SiC semiconductor to become a free carrier, the concentration of the carrier in the semiconductor is increased, the conductivity of the semiconductor is obviously improved relative to a dark state, and a foundation is laid for further generating an electric signal. It should be noted that the gate is forward biased to favor hot electron injection, which corresponds to higher bright current.
FIG. 3 shows a schematic circuit diagram of a transistor-type 4H-SiC-based broad spectrum surface plasmon polariton photodetector. According to kirchhoff's law, source current I S ＝I SD +I SG While the drain current I D ＝I SD +I GD In which I SD 、I SG 、I GD The current flowing from the source to the drain, the current flowing from the source to the gate, and the current flowing from the gate to the drain in 4H-SiC, respectively. When the grid electrode is suspended, a two-terminal device (contrast device) is formed, and the drain current I D ＝I S ＝I SD . Further, the invention is at V SD ＝20V，V GS When 10V, i.e. the source is grounded, the drain potential is-20V, the gate potential is 10V, and the current flow between the gate and drain is from the gate to the drain, so that the drain current I flows D A gain is exhibited. The transistor type 4H-SiC of the invention is very low in carrier concentration and the Fermi level of the semi-insulating type 4H-SiC is clamped by the surface stateSiC photodetectors all have extremely low dark current (10fA level) when different biases are applied to the gate electrodes, as shown in fig. 4. Similarly, the dark current (shown by the square line in fig. 8) of the gate-floating two-terminal device is also at an extremely low level.
FIG. 5 shows the equation when V GS When changing from-10V to 10V, the invention has I under the illumination condition D Following V SD Wherein the wavelengths of the incident lights in (a), (b) and (c) of FIG. 5 are 375nm, 565nm and 850nm, respectively, and the power density of the incident lights is 10.2mW/cm 2 . As seen in FIG. 5, when V is SD <At 0, all devices are in a cut-off state; when V is GS At different times, the turn-on voltage V of the device th Different. When λ is 375nm, with V GS from-10V to 0V, V th Gradually decreases from 11.2V to 0V, and when the grid voltage is further increased to 10V, V is th No longer changed and maintained at 0V. When λ is 565nm, with V GS When the voltage is increased from-10V to 0V, V th Gradually decreases from 15.2V to 0V, and if the grid voltage is further increased to 10V, V is th No longer changed and maintained at 0V. When λ is 850nm, with V GS When the voltage is increased from-10V to 10V, V th Gradually decreases from 16.8V to 2.8V. The main reason why the device turn-on voltage performance is different at different wavelengths is that the specific distribution and number of hot electron generation are different along with the excitation characteristics of the surface plasmon resonance mode. At λ 850nm, the number of hot electrons generated by surface plasmon resonance is small, so under the same conditions, the turn-on voltage required for the device is larger than at the other two wavelengths 375nm and 565 nm. Furthermore, as can be seen from fig. 5, a fixed V SD When V is 20V GS When increasing from-10V to 10V, I D The corresponding I increases with λ 375nm, 565nm and 850nm D Are respectively 1.0 × 10 -5 A、2.6×10 -6 A and 1.5X 10 -8 A. The reason why the bright current is low at a wavelength of 850nm is that the surface plasmon effect is weak at this wavelength and the amount of generated hot electrons is small.
It is noted that the incorporation of Au nanoparticles in the present invention significantly improves the performance of the transistor-type detector. FIG. 6 shows introduction Au nanoparticle front and rear devices I D With V SD Graph of variation of (1), V at test GS Are all 10V. As can be seen from fig. 6, due to the presence of Au nanoparticles, on one hand, the turn-on voltage of the device changes, and on the other hand, the off-current value and the on-current value are also affected. Before introduction of Au nanoparticles, turn-on voltage V th Positive, the off current is higher and the on current is lower. After introduction of Au nanoparticles, the voltage V was turned on th At 0V, the off current is reduced by nearly 2 orders of magnitude and the on current is increased by nearly 2 orders of magnitude. The increase of the conduction current shows that the introduced Au nanoparticles play a role in expanding the response bandwidth of the device, and meanwhile, the response rate of the device can be greatly improved. Compared with a two-terminal device with Au nano particles but a suspended grid electrode, the invention has very high gain. The bright current (375nm wavelength, 10.2 mW/cm) for the gate-suspended two-terminal device is given by the dotted line in FIG. 7 2 Optical power), it can be seen that the bright current of the two-terminal device is only 1.3 × 10 at 20V bias -9 A. Compared with the performance of a two-terminal device, the bright current gain of the invention is about 10 4 。
FIG. 8 shows the responsivity of the present invention measured with a xenon lamp plus monochromator system at different wavelengths with optical power density of μ W/cm 2 Magnitude, bias conditions at test: v GS 10V and V SD 20V. As can be seen from FIG. 8, the response rate of the present invention is maintained at 10A/W or more in the range of 300-850 nm. In addition, the responsivity of the invention is 2 orders of magnitude higher in the 4H-SiC absorption band than in the non-absorption band, specifically, the responsivity of the invention is about 1000A/W at 300nm wavelength. Fig. 9 shows the Linear Dynamic Range (LDR) of the present invention at λ 375nm, with test bias conditions: v GS 10V and V SD As can be seen from the figure, the LDR of the present invention is 166dB and the weakest detectable optical power density is 1.3nW/cm 2 This indicates that the present invention has excellent weak light detection capability.
In conclusion, the invention discloses a transistor type 4H-SiC-based broadband surface plasmon polariton photodetector, which is characterized in that an Au nanoparticle layer is introduced on a silicon surface of semi-insulating type 4H-SiC firstly, and then a source,And a drain electrode and a gate electrode are prepared on the carbon surface of the 4H-SiC, so that the wide-spectrum photoelectric detection performance with extremely high gain is finally realized, and the responsivity of the device is more than 10A/W in the wide-spectrum range of 300-850 nm. Wherein, under the ultraviolet wavelength of 300nm, the response rate of the device is as high as 10 3 A/W. In addition, the use of the semi-insulating 4H-SiC substrate effectively inhibits the dark current of the device, the device has very good weak light detection capability, and nW/cm can be detected 2 Horizontally weak light. The preparation method of the detector is simple and low in cost, the Au nanoparticles formed by thermal annealing are excited by exciting the surface plasmon resonance effect, the high-efficiency generation of a wide-spectrum thermal electron signal is realized, and the transistor type device enables thermal electrons to be successfully injected into 4H-SiC and realizes effective amplification. Compared with a transistor type contrast device without Au nanoparticles and a two-end device with Au nanoparticles and suspended grid electrode, the invention has the advantages that the bright current under the wavelength of 375nm shows 10 2 And 10 4 Is raised.
Finally, it should be noted that: the above embodiments are only used to illustrate the technical solution of the present invention, and not to limit the same; while the invention has been described in detail and with reference to the foregoing embodiments, it will be understood by those skilled in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; and the modifications or the substitutions do not make the essence of the corresponding technical solutions depart from the scope of the technical solutions of the embodiments of the present invention.

Claims (10)

1. The transistor type 4H-SiC-based broad spectrum surface plasmon polariton photodetector is characterized by comprising a 4H-SiC substrate (1), wherein an Au nanoparticle layer (2) is arranged on a silicon surface of the 4H-SiC substrate (1), the Au nanoparticle layer (2) is formed by island-shaped distribution of a plurality of Au nanoparticles, a separated semi-transparent source electrode (3) and a separated semi-transparent drain electrode (4) are arranged on the Au nanoparticle layer (2), and an opaque gate electrode (5) is arranged on a carbon surface of the 4H-SiC substrate (1).
2. The transistor-type 4H-SiC-based broad spectrum surface plasmon photodetector of claim 1, wherein in said Au nanoparticle layer (2), the island diameter of the Au nanoparticles distributed in island shape is 120nm ± 40nm, the island height is 40nm ± 10nm, and the gap width between the islands is 150nm ± 30 nm.
3. A transistor-type 4H-SiC-based broad-spectrum surface plasmon photodetector according to claim 1, characterized in that the source electrode (3) and the drain electrode (4) are parallel square metal electrodes with a side length of 230 μm ± 50 μm.
4. The transistor-type 4H-SiC-based broad spectrum surface plasmon photoelectric detector according to claim 3, wherein the thickness of the source electrode and the drain electrode are both 15nm ± 5nm, and the distance between the source electrode (3) and the drain electrode (4) is 30 μm ± 10 μm.
5. A transistor-type 4H-SiC based broad spectrum surface plasmon photodetector as defined in claim 1, characterized in that the 4H-SiC substrate (1) is semi-insulating and has a resistivity comprised between 1e13ohm cm and 1e15 ohm cm.
6. The transistor-type 4H-SiC-based broad spectrum surface plasmon photoelectric detector according to claim 1, characterized in that the thickness of the 4H-SiC substrate (1) is 100-1000 μm, and the thickness of the gate electrode (5) is 100nm ± 20 nm.
7. The transistor-type 4H-SiC-based broad spectrum surface plasmon photoelectric detector according to claim 1, wherein the source electrode (3), the drain electrode (4) and the gate electrode (5) are made of the same material and are one of silver, aluminum or gold.
8. The method for manufacturing the transistor-type 4H-SiC-based broad spectrum surface plasmon photoelectric detector according to claim 1, comprising the steps of:
s1, calibrating a carbon surface and a silicon surface of the 4H-SiC substrate through an atomic force microscope, and cleaning and drying the 4H-SiC substrate;
s2, preparing an Au film on one side of the silicon surface of the treated 4H-SiC substrate by a magnetron sputtering method, and then converting the Au film into an Au nanoparticle layer by a thin film thermal annealing process;
s3, arranging a mask on the Au nanoparticle layer, and preparing a source electrode and a drain electrode above the Au nanoparticle layer by adopting a magnetron sputtering method;
and S4, preparing a gate electrode on the carbon surface of the 4H-SiC substrate by adopting a magnetron sputtering method.
9. The method according to claim 8, wherein in step S2, the thickness of the prepared Au film is 4nm ± 1nm, and the specific method for converting the Au film into the Au nanoparticle layer by a thin film thermal annealing process is as follows: and transferring the 4H-SiC substrate plated with the Au thin film into a muffle furnace, raising the temperature to 500 ℃ in the muffle furnace from the room temperature of 3 ℃ per minute, maintaining the temperature for 3 hours, and naturally cooling to the room temperature to form an island-shaped Au nanoparticle layer.
10. The method of claim 8, wherein in step S3, a copper mesh mask is loaded on the 4H-SiC substrate loaded with the Au nanoparticle layer, and then magnetron sputtering is performed to prepare the source electrode and the drain electrode, wherein the copper mesh mask has geometric parameters of a square grid with a side length of 230 μm ± 50 μm, a rib width of 30 ± 10 μm, and a thickness of 20-30 μm.
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