CN114934264A - High-transmittance wear-resistant light-transmitting material and preparation method and application thereof - Google Patents
High-transmittance wear-resistant light-transmitting material and preparation method and application thereof Download PDFInfo
- Publication number
- CN114934264A CN114934264A CN202210592494.1A CN202210592494A CN114934264A CN 114934264 A CN114934264 A CN 114934264A CN 202210592494 A CN202210592494 A CN 202210592494A CN 114934264 A CN114934264 A CN 114934264A
- Authority
- CN
- China
- Prior art keywords
- light
- transmittance
- amorphous carbon
- wear
- transmitting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000463 material Substances 0.000 title claims abstract description 99
- 238000002834 transmittance Methods 0.000 title claims abstract description 61
- 238000002360 preparation method Methods 0.000 title claims abstract description 23
- 229910003460 diamond Inorganic materials 0.000 claims abstract description 83
- 239000010432 diamond Substances 0.000 claims abstract description 83
- 229910003481 amorphous carbon Inorganic materials 0.000 claims abstract description 72
- 238000000151 deposition Methods 0.000 claims abstract description 68
- 239000000758 substrate Substances 0.000 claims abstract description 59
- 230000008021 deposition Effects 0.000 claims abstract description 49
- 238000000034 method Methods 0.000 claims abstract description 26
- 230000003287 optical effect Effects 0.000 claims abstract description 21
- 238000004050 hot filament vapor deposition Methods 0.000 claims abstract description 19
- 238000006243 chemical reaction Methods 0.000 claims description 65
- 239000007789 gas Substances 0.000 claims description 48
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims description 44
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 35
- 229910052799 carbon Inorganic materials 0.000 claims description 34
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 26
- 239000001257 hydrogen Substances 0.000 claims description 22
- 229910052739 hydrogen Inorganic materials 0.000 claims description 22
- 238000004140 cleaning Methods 0.000 claims description 13
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 12
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 10
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 10
- 238000009210 therapy by ultrasound Methods 0.000 claims description 10
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 9
- 230000005284 excitation Effects 0.000 claims description 7
- 239000002994 raw material Substances 0.000 claims description 7
- 239000012780 transparent material Substances 0.000 claims description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 5
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 claims description 4
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 claims description 4
- 239000001273 butane Substances 0.000 claims description 4
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 claims description 4
- IJDNQMDRQITEOD-UHFFFAOYSA-N n-butane Chemical compound CCCC IJDNQMDRQITEOD-UHFFFAOYSA-N 0.000 claims description 4
- OFBQJSOFQDEBGM-UHFFFAOYSA-N n-pentane Natural products CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 claims description 4
- 230000007704 transition Effects 0.000 claims description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 3
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 238000001035 drying Methods 0.000 claims description 3
- 238000000746 purification Methods 0.000 claims description 3
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 claims description 2
- 238000005299 abrasion Methods 0.000 claims description 2
- 239000005354 aluminosilicate glass Substances 0.000 claims description 2
- 229910052732 germanium Inorganic materials 0.000 claims description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 2
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 claims description 2
- 229910001635 magnesium fluoride Inorganic materials 0.000 claims description 2
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 2
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 claims description 2
- 239000002904 solvent Substances 0.000 claims 2
- 238000010899 nucleation Methods 0.000 abstract description 11
- 230000006911 nucleation Effects 0.000 abstract description 11
- 239000000126 substance Substances 0.000 abstract description 10
- 230000003746 surface roughness Effects 0.000 abstract description 9
- 230000002349 favourable effect Effects 0.000 abstract description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 26
- 230000000052 comparative effect Effects 0.000 description 20
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 14
- 229910052786 argon Inorganic materials 0.000 description 13
- 230000009286 beneficial effect Effects 0.000 description 10
- 238000012512 characterization method Methods 0.000 description 8
- 239000012159 carrier gas Substances 0.000 description 7
- 229910052757 nitrogen Inorganic materials 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 238000005086 pumping Methods 0.000 description 6
- 238000001069 Raman spectroscopy Methods 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 229910052715 tantalum Inorganic materials 0.000 description 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical group [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 4
- 238000000861 blow drying Methods 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 150000002431 hydrogen Chemical class 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000000354 decomposition reaction Methods 0.000 description 2
- 238000011031 large-scale manufacturing process Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000007935 neutral effect Effects 0.000 description 2
- 238000010900 secondary nucleation Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 238000010000 carbonizing Methods 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000002159 nanocrystal Substances 0.000 description 1
- 239000002113 nanodiamond Substances 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 1
- 238000001878 scanning electron micrograph Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
- C23C16/271—Diamond only using hot filaments
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The application relates to the technical field of diamond film layer preparation, in particular to a high-transmittance wear-resistant light-transmitting material and a preparation method and application thereof. The preparation method of the high-transmittance wear-resistant light-transmitting material comprises the steps of forming an amorphous carbon film on the surface of a light-transmitting substrate to obtain an intermediate, and then depositing a diamond film on the surface of the amorphous carbon film of the intermediate in a hot wire chemical vapor deposition mode. Firstly, an amorphous carbon film is formed on a light-transmitting substrate, and the amorphous carbon film is favorable for improving the nucleation rate of a subsequent diamond film, so that the grain size of the formed diamond film is smaller, the surface roughness of the formed diamond film is obviously reduced, and the optical performance of a light-transmitting material is favorably improved; meanwhile, the hot wire chemical vapor deposition method is adopted to deposit the diamond film on the surface of the amorphous carbon film, so that the deposition efficiency and the nucleation rate of the diamond film can be improved, the thickness of the diamond film can be obviously reduced, and the ultrathin light-transmitting material with high light transmittance, high chemical stability and high wear resistance can be prepared.
Description
Technical Field
The application relates to the technical field of diamond film layer preparation, in particular to a high-transmittance wear-resistant light-transmitting material and a preparation method and application thereof.
Background
The light-transmitting material has good optical performance, and has a plurality of application scenes in actual production and life, such as fairings and windows of aircrafts, optical lenses, marine exploration, biomedicine, screens, transparent electrodes and the like, and the applications have different environmental factors, so that certain requirements are made on the properties of the light-transmitting material, such as chemical inertness, mechanical strength and the like. The prior light-transmitting material is difficult to simultaneously meet the requirements of high transparency, corrosion resistance, high wear resistance, high mechanical strength and the like.
The nano-diamond film is a crystal material mainly composed of fine sp3 hybridized diamond grains, and can be used for being attached to the surface of a light-transmitting substrate to meet the requirements of the light-transmitting material on high transparency, corrosion resistance, high wear resistance, high mechanical strength and the like due to the excellent performances of high hardness, low surface roughness, high thermal conductivity, high resistivity, high transparency, high chemical inertness, good biocompatibility and the like.
However, the existing preparation process of the diamond film attached to the surface of the light-transmitting substrate is complex and difficult to prepare, and large-scale production cannot be realized; meanwhile, the light-transmitting substrate is not beneficial to nucleation of the diamond film, so that the surface roughness of the prepared diamond film is high, and further the optical performance of the prepared light-transmitting material is reduced, therefore, the surface of the diamond film needs to be subjected to surface polishing treatment to meet the optical performance, and the cost is high; moreover, the commonly prepared diamond film layer is thicker and can not meet the requirement of the ultrathin diamond film layer.
Disclosure of Invention
The application aims to provide a high-transmittance wear-resistant light-transmitting material, a preparation method and application thereof, and aims to solve the technical problems that the existing diamond film attached to the surface of a light-transmitting substrate is high in surface roughness, thick in film layer and poor in optical performance.
The first aspect of the application provides a preparation method of a high-transmittance wear-resistant light-transmitting material, which comprises the steps of forming an amorphous carbon film on the surface of a light-transmitting substrate to obtain an intermediate, and then depositing a diamond film on the surface of the amorphous carbon film of the intermediate in a hot wire chemical vapor deposition mode.
The high-transmittance wear-resistant light-transmitting material is prepared by forming an amorphous carbon film on a light-transmitting substrate and then depositing a diamond film on the surface of the amorphous carbon film in a hot wire chemical vapor deposition mode. The amorphous carbon film is beneficial to improving the nucleation rate of a subsequent diamond film, so that the grain size of the formed diamond film is smaller, the surface roughness of the formed diamond film is obviously reduced, the optical performance of the light-transmitting material is beneficial to improving, and the high-cost surface polishing treatment step can be omitted; meanwhile, the hot wire chemical vapor deposition method is adopted to deposit the diamond film on the surface of the amorphous carbon film, so that the deposition efficiency and the nucleation rate of the diamond film can be improved, the thickness of the diamond film can be obviously reduced, and the ultrathin light-transmitting material with high light transmittance, high chemical stability and high wear resistance can be prepared.
The second aspect of the present application provides a high-transmittance wear-resistant light-transmitting material prepared by the method for preparing the high-transmittance wear-resistant light-transmitting material provided by the first aspect.
The diamond layer thickness on the high wear-resisting printing opacity material surface that passes through that this application provided is thinner, has advantages such as luminousness height, chemical stability height and wearability height.
The third aspect of the present application provides a use of the high-transmittance wear-resistant light-transmitting material provided by the second aspect in preparing any one of screens, optical lenses, observation windows, transmitters, receivers and ornaments of electronic products.
Optionally, the electronic product includes at least one of a mobile phone, a computer, and a game machine.
The application provides a wear-resisting printing opacity material is passed through to height has advantages such as thickness is thin, the luminousness is high, chemical stability is high and wearability is high, has good application prospect in electronic product screen, optical lens, observation window, transmitter, receiver and ornament.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are required to be used in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present application and therefore should not be considered as limiting the scope, and for those skilled in the art, other related drawings can be obtained from the drawings without inventive effort.
Fig. 1 shows a schematic structural diagram of a high-transmittance wear-resistant light-transmitting material provided by the present application.
Fig. 2 shows an SEM image of the light transmitting material prepared in example 1 of the present application.
Fig. 3 shows a visible Raman diagram of a light transmitting material prepared in example 1 of the present application.
Fig. 4 shows a visible Raman diagram of a light transmitting material prepared in comparative example 2 of the present application.
Fig. 5 is a comparative graph showing the appearance of the light transmitting materials obtained in example 1 of the present application and comparative example 1.
Fig. 6 shows transmittance graphs of light transmitting materials prepared in example 1 of the present application and comparative example 1.
Icon: 100-high-transmittance wear-resistant light-transmitting material; 110-a light transmissive substrate; 120-amorphous carbon film; 130-diamond film.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions of the embodiments of the present application will be clearly and completely described below. The examples, in which specific conditions are not specified, were conducted under conventional conditions or conditions recommended by the manufacturer. The reagents or instruments used are not indicated by the manufacturer, and are all conventional products available commercially.
The following provides a specific description of a high-transmittance wear-resistant light-transmitting material, a preparation method thereof, and an application thereof.
The application provides a preparation method of a high-transmittance wear-resistant light-transmitting material, which comprises the following steps: and forming an amorphous carbon film on the surface of the light-transmitting substrate to obtain an intermediate, and then depositing a diamond film on the surface of the amorphous carbon film of the intermediate in a hot wire chemical vapor deposition mode.
The diamond film is mainly classified into a single crystal diamond film, a polycrystalline diamond film and a nano crystal diamond film. The single crystal diamond film has excellent mechanical properties, but the single crystal diamond film is difficult to prepare, so that the large-scale production cannot be realized. The polycrystalline diamond film has better mechanical property, but the nucleation rate of the polycrystalline diamond film on a light-transmitting substrate is lower, the thickness of the polycrystalline diamond film is thicker, and the surface roughness is higher, so that the optical property of the polycrystalline diamond film is reduced. The nanocrystalline diamond film has a lower surface roughness but a lower crystallinity, resulting in a decrease in the optical properties of the nanocrystalline diamond film. In the prior art, the optical performance of the material prepared by directly depositing the diamond film on the surface of the light-transmitting substrate is not ideal.
The inventor researches and discovers that by adopting the preparation method of the high-transmittance wear-resistant light-transmitting material provided by the application, firstly, the amorphous carbon film is formed on the light-transmitting substrate, and then the diamond film is deposited on the surface of the amorphous carbon film in a hot wire chemical vapor deposition (HFCVD) mode, so that the surface roughness and the thickness of the diamond film can be reduced (the thickness of the diamond film can be reduced to be less than 35 nm), and the optical performance of the prepared light-transmitting material can be ensured to be better. The preparation process of the high-transmittance wear-resistant light-transmitting material is simple and easy to implement, does not need to select a light-transmitting substrate made of special materials or specially process the light-transmitting substrate, is suitable for mass production, and can be applied to screens, optical lenses, observation windows, emitters, receivers, ornaments and the like of various electronic products.
The amorphous carbon film is formed on the light-transmitting substrate, the amorphous carbon film is beneficial to improving the nucleation rate of the diamond film formed by subsequent deposition, the nucleation rate is improved, the grain size of the formed diamond film is smaller, the multiple grains grow simultaneously, the complete diamond film covering the surface of the light-transmitting substrate is formed more quickly, and the thickness of the formed diamond film is further reduced; the smaller the grain size, the surface roughness of the formed diamond film is obviously reduced, which is beneficial to improving the optical performance of the light-transmitting material, and the step of polishing the surface of the diamond film with high cost can be saved. Meanwhile, the hot wire chemical vapor deposition method is adopted to deposit the diamond film on the surface of the amorphous carbon film, so that the deposition efficiency, the nucleation rate and the deposition area of the diamond film can be improved, the thickness of the diamond film can be obviously reduced, and the ultrathin light-transmitting material with high light transmittance, high chemical stability (such as corrosion resistance and the like) and high wear resistance (such as scratch resistance and the like) can be prepared; in addition, the light-transmitting substrate of the high-transmittance wear-resistant light-transmitting material prepared by the preparation process is high in bonding strength with the surface film layer, high in structural stability and not easy to peel off the film layer attached to the surface of the light-transmitting substrate.
In the embodiment, the light-transmitting substrate is selected from transparent materials with the phase-change temperature of more than or equal to 600 ℃, and the materials of the light-transmitting substrate have the advantages of high temperature resistance and high light transmittance, and can be beneficial to forming an amorphous carbon film on the surface of the light-transmitting substrate and further depositing a diamond film layer.
The phase transition temperature mentioned above in the present application means the highest temperature at which the material does not undergo a phase transition.
In some alternative embodiments of the present application, the light transmissive material may include any one of quartz glass, sodium silicate glass, aluminosilicate glass, alumina transparent material, magnesium fluoride transparent material, and infrared window material. Further, the infrared window material includes any one of germanium and zinc selenide. It should be noted that in other embodiments of the present application, the light-transmitting substrate may also be other light-transmitting materials, such as high-temperature resistant common glass. The light-transmitting material with the phase transition temperature of more than or equal to 600 ℃ belongs to the protection scope of the application.
In this embodiment, before the amorphous carbon film is formed on the surface of the light-transmitting substrate, the method further includes performing a cleaning process on the light-transmitting substrate to obtain a light-transmitting substrate with a clean surface. Specifically, the purification treatment includes: the transparent substrate is firstly subjected to first ultrasonic treatment in the first solution, and then is subjected to second ultrasonic treatment in the second solution, so that the condition that the subsequent transparent substrate is not favorable for forming the amorphous carbon film on the surface of the transparent substrate due to impurities on the transparent substrate can be avoided. Further, the time of the first ultrasonic treatment is 8-12min, and the time of the second ultrasonic treatment is 2-7 min. In other embodiments of the present application, the method of performing a cleaning process on the light-transmitting substrate before forming the amorphous carbon film on the surface of the light-transmitting substrate may be only cleaning.
In some alternative embodiments, the first solution may be selected from acetone and the second solution may be selected from isopropanol. It should be noted that in other embodiments of the present application, other neutral solutions may be used for the first solution and the second solution.
In this embodiment, after the second ultrasonic treatment, the transparent substrate is further cleaned and dried by using the third solution to remove the second solution remaining on the surface of the transparent substrate, which is beneficial to avoiding the influence of the existence of the second solution on the adhesion of the amorphous carbon film on the transparent substrate. In this embodiment, the drying mode may be drying by blowing with nitrogen. Further, the third solution may be selected from anhydrous ethanol. It should be noted that in other embodiments of the present application, other neutral solutions may be used as the third solution.
The amorphous Carbon film may be selected from a diamond-like Carbon (DLC) film, a graphitic Carbon (GLC) film, or a Carbon Glass (Glass Carbon) film. Further, in this embodiment, the amorphous carbon film is a diamond-like carbon film, which is more beneficial to the subsequent deposition of the diamond film and improves the nucleation rate of the diamond film. In other embodiments of the present application, the amorphous carbon film may be another transparent amorphous carbon film.
The method for forming the amorphous carbon film on the surface of the light-transmitting substrate may be selected from a magnetron sputtering method or a Chemical Vapor Deposition (CVD) method. Further, in the embodiment, the amorphous carbon film is formed on the surface of the light-transmitting substrate by a Plasma Enhanced Chemical Vapor Deposition (PECVD) method, and the PECVD reaction can improve the uniformity of the deposited amorphous carbon film, which is beneficial to the deposition of the subsequent diamond film; and the plasma has an etching effect on the surface of the light-transmitting substrate, so that the deposited amorphous carbon film has better adhesion with the light-transmitting substrate.
When the method of forming the amorphous carbon film on the surface of the light-transmitting substrate is a PECVD method, the step of forming the amorphous carbon film on the surface of the light-transmitting substrate to obtain an intermediate includes: and carrying out a first deposition reaction on the light-transmitting substrate in the amorphous carbon film raw material gas under the vacuum condition.
In the present embodiment, the amorphous carbon film source gas includes a first carbon source gas and hydrogen gas. The first carbon source gas includes at least one of methane, ethane, acetylene, benzene, and butane. The hydrogen has an etching effect and can form reverse balance with the first carbon source gas to create a reaction condition for depositing the amorphous carbon film; meanwhile, hydrogen can also be used for adjusting the proportion of carbon to hydrogen in the amorphous carbon film, thereby influencing the hardness and the light transmittance of the amorphous carbon film. Further, the first carbon source gas is methane.
In some embodiments of the present application, the volume ratio of the first carbon source gas and the hydrogen gas in the first deposition reaction is 1: (0.1-0.5). In the above ratio, the transmittance and hardness of the amorphous carbon film formed can be improved, and the ionization concentration of the PECVD reaction process can be increased to promote the first deposition reaction to proceed more rapidly.
In some embodiments of the present application, the amorphous carbon film feedstock gas further comprises a first carrier gas comprising at least one of argon and nitrogen, the first carrier gas acting to adjust the volume concentration of hydrogen. Illustratively, the first carrier gas is argon, and the volume ratio of argon to hydrogen in the first deposition reaction is (10-15): 1.
in the present embodiment, the temperature of the first deposition reaction is 500-. Illustratively, the temperature of the first deposition reaction may be 500 ℃, 520 ℃, 550 ℃, or 600 ℃, etc., and the excitation power of the first deposition reaction may be 150W, 180W, 200W, or 250W, etc. Further, the temperature of the first deposition reaction was 550 ℃, and the excitation power of the first deposition reaction was 150W.
In this embodiment, the deposition time of the first deposition reaction is 10-40min, and the thickness of the amorphous carbon film can be reduced. As an example, the deposition time of the first deposition reaction may be 10min, 25min, 35min, or 40min, or the like.
In this embodiment, the flow rate of the first carbon source gas is 5-15 sccm. Illustratively, the flow rate of the first carbon source gas may be 5sccm, 8sccm, 12sccm, 15sccm, or the like, and further, the flow rate of the first carbon source gas is 10 sccm.
In some embodiments of the present application, the vacuum pressure before the first deposition reaction is ≦ 10 Pa.
Further, in this embodiment, the step of forming the amorphous carbon film on the surface of the light-transmitting substrate to obtain the intermediate specifically includes the steps of: firstly, placing a light-transmitting substrate in a reaction cavity, and then adjusting the reaction cavity to be under a vacuum condition; heating the reaction cavity to a first deposition reaction temperature, and introducing hydrogen (or hydrogen and first carrier gas); then, a first carbon source gas is introduced to carry out a first deposition reaction under the excitation power of the first deposition reaction.
In this embodiment, after the first deposition reaction is completed, the residual gas in the reaction chamber needs to be pumped out, and nitrogen is introduced and cooled to room temperature.
After forming an amorphous carbon film on the surface of the light-transmitting substrate to obtain an intermediate, depositing a diamond film on the surface of the amorphous carbon film by HFCVD; in this embodiment, the step of depositing a diamond film on the surface of the amorphous carbon film of the intermediate by HFCVD includes: and under the vacuum condition, placing the intermediate on a gasket, and introducing diamond film raw material gas to perform a second deposition reaction.
In this embodiment, the diamond film source gas comprises a second carbon source gas and hydrogen gas. The second carbon source gas includes at least one of methane, ethane, acetylene, benzene, and butane. The hydrogen gas has an etching effect and can form reverse equilibrium with the second carbon source gas to create reaction conditions for depositing the diamond film. Further, the second carbon source gas is methane.
In the present embodiment, when the second carbon source gas is methane, the volume ratio of the second carbon source gas (i.e. methane) to hydrogen is 1 (10-20), which has the effects of increasing the secondary nucleation rate and reducing the grain size. As an example, when the second carbon source gas is methane, the volume ratio of methane to hydrogen may be 1: 10. 1: 15. 1: 18 or 1: 20, and so on. Further, when the second carbon source gas is methane, the volume ratio of methane to hydrogen is 1: 12.5.
in some embodiments of the present application, the diamond feedstock gas further comprises a second carrier gas comprising at least one of argon and nitrogen. The second carrier gas has the functions of increasing the decomposition rate of the diamond raw material gas, improving the activity of reactants, increasing the secondary nucleation rate and reducing the grain size. Further, the volume ratio of the second carrier gas to the hydrogen gas is 1: (0.5-5).
In this embodiment, the power of the hot wire for the second deposition reaction is 8000W and 5000-. Illustratively, the filament power of the second deposition reaction may be 5000W, 5200W, 6000W, 7500W, 8000W, or the like, and the gas pressure of the second deposition reaction may be 1000Pa, 1200Pa, 1500Pa, 2000Pa, or the like. Further, the filament power of the second deposition reaction was 7143W, and the gas pressure of the second deposition reaction was 1500 Pa.
In this embodiment, the deposition time of the second deposition reaction is 10-90min, which is beneficial to reducing the thickness of the diamond film. As an example, the deposition time of the second deposition reaction may be 10min, 30min, 40min, 70min, or 90min, or the like. Further, the deposition time of the second deposition reaction was 30 min.
In this embodiment, the flow rate of the second carbon source gas is 50-200 sccm. Illustratively, the flow rate of the second carbon source gas may be 50sccm, 100sccm, 150sccm, 200sccm, or the like.
In this embodiment, after the second deposition reaction is completed, the gas remaining in the reaction chamber needs to be pumped out, and the hot wire current is gradually reduced to 0A.
In some embodiments of the present application, the vacuum pressure before the second deposition reaction is ≦ 10 Pa.
In some embodiments of the present application, the method further comprises pretreating and carbonizing the hot wire before introducing the diamond film raw material gas for the second deposition reaction. The step of pretreatment carbonization comprises the step of introducing a second carbon source gas and hydrogen to carbonize the hot wire so as to stabilize the voltage of the hot wire and facilitate the subsequent deposition of the diamond film.
In this example, the distance from the hot wire to the surface of the amorphous carbon film of the intermediate was 10 to 45mm, and there was an effect of preventing hydrogen atoms generated by decomposition of hydrogen gas by the hot wire from etching the carbon film. Illustratively, the distance from the hot wire to the surface of the amorphous carbon film of the intermediate may be 10mm, 12mm, 30mm, or 45mm, or the like. Further, the distance from the hot wire to the surface of the amorphous carbon film of the intermediate was 15 mm.
In some embodiments, the gasket is made of alumina.
In some embodiments, the material of the hot wire is tantalum, tungsten or rhenium.
In some embodiments, the diameter of the hot wire is 0.5mm and the number of hot wires is 8.
The application also provides a high-transparency wear-resistant light-transmitting material which is prepared by adopting the preparation method of the high-transparency wear-resistant light-transmitting material.
Fig. 1 shows a schematic structural diagram of a high-transmittance wear-resistant light-transmitting material 100 provided by the present application, please refer to fig. 1, in which the high-transmittance wear-resistant light-transmitting material 100 includes a light-transmitting substrate 110, an amorphous carbon film 120 and a diamond film 130, the amorphous carbon film 120 is attached to the surface of the light-transmitting substrate 110, and the diamond film 130 is attached to the surface of the amorphous carbon film 120 away from the light-transmitting substrate 110. The light transmittance of the high-transmittance wear-resistant light-transmitting material 100 prepared by the preparation method of the high-transmittance wear-resistant light-transmitting material provided by the application can reach 92%, the thickness of the amorphous carbon film 120 can be as low as 10nm, and the thickness of the diamond film 130 can be as low as 31nm, so that the requirements on the high light transmittance and the low thickness of the light-transmitting material are met.
The high wear-resisting printing opacity material that passes through that this application provided has advantages such as ultra-thin, the luminousness is high, chemical stability is high and wearability, can be used for screen, optical lens, observation window, transmitter, receiver and ornament etc. of multiple electronic product.
The application also provides an application of the wear-resistant light-transmitting material in preparing any one of electronic product screens, optical lenses, observation windows, emitters, receivers and ornaments.
Illustratively, the electronic product includes at least one of a mobile phone, a computer, and a game machine; optical lenses include lenses in devices such as cameras or microscopes; the observation window comprises an aircraft porthole, an industrial instrument observation window and the like; the high-transmittance wear-resistant light-transmitting material can be used for transmitters, receiver laser windows or infrared windows and the like.
The application provides a wear-resisting printing opacity material of high passing through has advantages such as thickness is thin, the luminousness is high, chemical stability is high and wearability is high, has good application prospect in electronic product screen, optical lens, observation window, transmitter, receiver and ornament.
The characteristics and properties of the high-transmittance, abrasion-resistant and light-transmitting material and the preparation method thereof are further described in detail in the following with reference to the examples.
Example 1
The embodiment provides a high-transmittance wear-resistant light-transmitting material and a preparation method thereof, and the high-transmittance wear-resistant light-transmitting material is prepared by the following steps:
(1) ultrasonically cleaning double-side polished quartz glass in acetone for 10min, ultrasonically cleaning in isopropanol for 5min, cleaning with absolute ethyl alcohol, and blow-drying with nitrogen.
(2) And (2) putting the quartz glass obtained in the step (1) in a reaction cavity of a PECVD device, vacuumizing to 10Pa, heating the reaction cavity to 500 ℃, and introducing 10sccm of argon and 1sccm of hydrogen. And continuously introducing 5sccm of methane, and reacting for 30min under the excitation power of 150W. And (4) pumping out residual gas in the reaction cavity, introducing 10sccm of argon, and cooling to room temperature to obtain an intermediate.
(3) And (3) placing the intermediate prepared in the step (2) on an aluminum oxide gasket in a reaction cavity of an HFCVD device, wherein the amorphous carbon film layer faces the hot wire, and the distance from the hot wire to the surface of the intermediate is 45 mm. Vacuumizing to 10Pa, introducing 20sccm methane and 500sccm hydrogen, and controlling the pressure in the reaction chamber to 2000Pa until the hot wire voltage is stable. 8sccm of methane, 100sccm of hydrogen and 92sccm of argon are introduced, the pressure in the reaction chamber is controlled to be 1500Pa, and the power of the hot wire is 7143W. Adjusting the distance from the surface of the intermediate to the hot wire to be 15mm, and depositing for 30 min. And pumping out residual gas in the reaction cavity, and gradually reducing the current of the hot wire to 0A. Wherein the hot wires are tantalum wires with the diameter of 0.5mm, and the number of the hot wires is 8.
Example 2
The embodiment provides a high-transmittance wear-resistant light-transmitting material and a preparation method thereof, and the high-transmittance wear-resistant light-transmitting material is prepared by the following steps:
(1) ultrasonically cleaning double-side polished quartz glass in acetone for 12min, ultrasonically cleaning in isopropanol for 7min, cleaning with absolute ethyl alcohol, and blow-drying with nitrogen.
(2) And (2) putting the quartz glass obtained in the step (1) into a reaction cavity of a PECVD device, vacuumizing to 10Pa, heating the reaction cavity to 600 ℃, and introducing 10sccm of argon and 1sccm of hydrogen. Continuously introducing 10sccm of methane, and reacting for 30min under the excitation power of 200W. And (4) pumping out residual gas in the reaction cavity, introducing argon of 20sccm, and cooling to room temperature to obtain an intermediate.
(3) And (3) placing the intermediate prepared in the step (2) on an aluminum oxide gasket in a reaction chamber of an HFCVD device, wherein the amorphous carbon film layer faces the hot wire, and the distance from the hot wire to the surface of the intermediate is 45 mm. Vacuumizing to 10Pa, introducing 20sccm methane and 500sccm hydrogen, and controlling the pressure in the reaction chamber to 2000Pa until the voltage of the hot wire is stable. 200sccm of methane, 4000sccm of hydrogen and 800sccm of argon are introduced, the pressure in the reaction cavity is controlled at 1300Pa, and the power of the hot wire is 7500W. Adjusting the distance from the surface of the intermediate to the hot wire to be 25mm, and depositing for 90 min. And pumping out residual gas in the reaction cavity, and gradually reducing the current of the hot wire to 0A. Wherein the hot wires are tantalum wires with the diameter of 0.5mm, and the number of the hot wires is 8.
Example 3
The embodiment provides a high-transmittance wear-resistant light-transmitting material and a preparation method thereof, and the high-transmittance wear-resistant light-transmitting material is prepared by the following steps:
(1) ultrasonically cleaning double-side polished quartz glass in acetone for 8min, ultrasonically cleaning in isopropanol for 2min, cleaning with absolute ethyl alcohol, and blow-drying with nitrogen.
(2) And (2) putting the quartz glass obtained in the step (1) into a reaction cavity of a PECVD device, vacuumizing to 10Pa, heating the reaction cavity to 500 ℃, and introducing 10sccm of argon and 1sccm of hydrogen. Continuously introducing 10sccm of methane, and reacting for 40min under the excitation power of 150W. And (4) pumping out residual gas in the reaction cavity, introducing 200sccm argon, and cooling to room temperature to obtain an intermediate.
(3) And (3) placing the intermediate prepared in the step (2) on an aluminum oxide gasket in a reaction chamber of an HFCVD device, wherein the amorphous carbon film layer faces the hot wire, and the distance from the hot wire to the surface of the intermediate is 45 mm. Vacuumizing to 10Pa, introducing 20sccm methane and 500sccm hydrogen, and controlling the pressure in the reaction chamber to 1000Pa until the voltage of the hot wire is stable. 6sccm of methane, 100sccm of hydrogen and 92sccm of argon are introduced, the pressure in the reaction chamber is controlled to be 1000Pa, and the power of the hot wire is 7000W. Adjusting the distance from the surface of the intermediate to the hot wire to be 10mm, and depositing for 30 min. And pumping out residual gas in the reaction cavity, and gradually reducing the current of the hot wire to 0A. Wherein the hot wires are tantalum wires with the diameter of 0.5mm, and the number of the hot wires is 8.
Comparative example 1
Comparative example 1 differs from example 1 in that: comparative example 1 does not have step (2).
Comparative example 2
Comparative example 2 differs from example 1 in that: comparative example 2 does not have step (3).
Test example 1
The light-transmitting material prepared in example 1 was subjected to Scanning Electron Microscope (SEM) characterization and Raman (Raman) spectroscopic characterization, respectively, and the characterization results are shown in fig. 2 and 3, respectively. The light-transmitting material prepared in comparative example 2 was subjected to SEM characterization, and the results are shown in fig. 4. In fig. 2, the magnification of the portion a is 50000x, and the magnification of the portion B in fig. 2 is 100000 x.
As can be seen from fig. 2 and 3, the light transmitting material d1e prepared in example 1 has a dense high-quality diamond film formed on the surface. As can be seen from fig. 4, the diamond-like film was formed on the surface of the light transmitting material prepared in comparative example 2.
Test example 2
The light transmission materials prepared in example 1 and comparative example 1 were subjected to appearance comparison and transmittance characterization, wherein the appearance comparison result is shown in fig. 5, and the transmittance characterization result is shown in fig. 6. Wherein, a portion a in fig. 5 is untreated quartz glass, a portion B in fig. 5 is a light-transmitting material produced in comparative example 1, and a portion C in fig. 5 is a light-transmitting material produced in example 1; line a in fig. 6 indicates the transmittance curve of the untreated quartz glass.
As can be seen from fig. 5 and 6, the transmittance of the light-transmitting material obtained in example 1 is significantly higher than that of the light-transmitting material obtained in comparative example 1, which indicates that the optical properties of the diamond-like film directly deposited on the quartz glass in comparative example 1 are poor, whereas the transmittance of the light-transmitting material obtained in example 1 by depositing the diamond-like film on the surface of the quartz glass first and then depositing the diamond-like film on the surface of the diamond-like film is significantly improved.
Test example 3
The light-transmitting materials obtained in examples 1 to 3 and comparative examples 1 to 2 were subjected to property characterization, and the results of the characterization are shown in table 1.
TABLE 1
Wherein the light transmittance is a light transmittance measured at 600 nm.
As can be seen from table 1: the light transmittances of the light-transmitting materials prepared in the embodiments 1-3 are all higher than the light transmittance of the light-transmitting materials prepared in the comparative examples 1-2, which indicates that the light transmittance of the light-transmitting materials can be effectively improved by firstly forming the amorphous carbon film on the light-transmitting substrate and then depositing the diamond film on the surface of the amorphous carbon film by adopting a hot filament chemical vapor deposition method; meanwhile, the thickness of the diamond film layer of the light-transmitting material prepared in the embodiment 1-3 is obviously lower than that of the light-transmitting material prepared in the comparative example 1, and the grain size of the diamond film layer of the light-transmitting material prepared in the embodiment 1-3 is obviously smaller than that of the diamond film layer of the light-transmitting material prepared in the comparative example 1, which shows that the method of firstly forming the amorphous carbon film on the light-transmitting substrate and then depositing the diamond film on the surface of the amorphous carbon film by adopting a hot wire chemical vapor deposition mode can effectively reduce the thickness of the prepared diamond film layer and improve the nucleation rate of the diamond film.
In summary, the transparent material prepared by forming the amorphous carbon film on the transparent substrate and then depositing the diamond film on the surface of the amorphous carbon film by hot filament chemical vapor deposition has the advantages of being ultrathin, high in light transmittance, high in chemical stability and high in wear resistance.
The above description is only a preferred embodiment of the present application and is not intended to limit the present application, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, improvement and the like made within the spirit and principle of the present application shall be included in the protection scope of the present application.
Claims (10)
1. A preparation method of a high-transmittance wear-resistant light-transmitting material is characterized by comprising the following steps: an amorphous carbon film is formed on the surface of a light-transmitting substrate to obtain an intermediate, and then a diamond film is deposited on the surface of the amorphous carbon film of the intermediate in a hot wire chemical vapor deposition mode.
2. The method for preparing the high-transmittance wear-resistant light-transmitting material according to claim 1, wherein the amorphous carbon film is a diamond-like carbon film.
3. The method for preparing the high-transmittance wear-resistant light-transmitting material according to claim 1, wherein the amorphous carbon film is formed by magnetron sputtering or chemical vapor deposition.
4. The method for preparing the high-transmittance wear-resistant light-transmitting material according to claim 3, wherein the amorphous carbon film is formed by plasma enhanced chemical vapor deposition; the step of preparing the intermediate comprises: carrying out a first deposition reaction on the light-transmitting substrate in the amorphous carbon film raw material gas under a vacuum condition;
wherein the amorphous carbon film raw material gas comprises a first carbon source gas and hydrogen; the temperature of the first deposition reaction is 500-600 ℃, and the excitation power of the first deposition reaction is 150-250W;
optionally, the first carbon source gas comprises at least one of methane, ethane, acetylene, benzene, and butane.
5. The method for preparing the high-transmittance wear-resistant light-transmitting material according to claim 1, wherein the step of depositing a diamond film on the surface of the amorphous carbon film of the intermediate by hot wire chemical vapor deposition comprises: under the vacuum condition, placing the intermediate on a gasket, and introducing diamond film raw material gas to perform a second deposition reaction;
wherein the diamond film feed gas comprises a second carbon source gas and hydrogen; the power of the hot wire of the second deposition reaction is 5000-8000W, and the air pressure of the second deposition reaction is 1000-2000 Pa;
optionally, the deposition time of the second deposition reaction is 10-90 min.
6. The method for preparing the high-transmittance wear-resistant light-transmitting material according to claim 5,
the second carbon source gas comprises at least one of methane, ethane, acetylene, benzene, and butane;
optionally, the second carbon source gas is methane, and the volume ratio of the second carbon source gas to the hydrogen gas is 1 (10-20);
optionally, the distance from the hot filament to the surface of the amorphous carbon film of the intermediate is 10-45 mm.
7. The method for preparing the high-transmittance wear-resistant light-transmitting material according to any one of claims 1 to 6, wherein the light-transmitting substrate is selected from light-transmitting materials with phase transition temperature of more than or equal to 600 ℃;
optionally, the light-transmitting material comprises any one of quartz glass, sodium silicate glass, aluminosilicate glass, alumina transparent material, magnesium fluoride transparent material and infrared window material;
optionally, the infrared window material includes any one of germanium and zinc selenide.
8. The method for preparing the high-transmittance wear-resistant light-transmitting material according to any one of claims 1-6, wherein the method further comprises performing a purification treatment on the light-transmitting substrate before forming the amorphous carbon film on the surface of the light-transmitting substrate; the purification treatment comprises the following steps: firstly, carrying out first ultrasonic treatment on the light-transmitting substrate in a first solution, and then carrying out second ultrasonic treatment on the light-transmitting substrate in a second solution;
optionally, the time of the first ultrasonic treatment is 8-12min, and the time of the second ultrasonic treatment is 2-7 min;
optionally, the first solution comprises acetone and the second solution comprises isopropanol;
optionally, the purifying treatment further comprises cleaning and drying the light-transmitting substrate with a third solvent after the second ultrasonic treatment;
optionally, the third solvent comprises absolute ethanol.
9. A high-transmittance wear-resistant light-transmitting material, which is prepared by the preparation method of the high-transmittance wear-resistant light-transmitting material as claimed in any one of claims 1 to 8.
10. Use of the high-transmittance, abrasion-resistant and light-transmitting material according to claim 9 for preparing any one of screens, optical lenses, observation windows, emitters, receivers and ornaments of electronic products;
optionally, the electronic product includes at least one of a mobile phone, a computer, and a game machine.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210592494.1A CN114934264A (en) | 2022-05-27 | 2022-05-27 | High-transmittance wear-resistant light-transmitting material and preparation method and application thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210592494.1A CN114934264A (en) | 2022-05-27 | 2022-05-27 | High-transmittance wear-resistant light-transmitting material and preparation method and application thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN114934264A true CN114934264A (en) | 2022-08-23 |
Family
ID=82866482
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210592494.1A Pending CN114934264A (en) | 2022-05-27 | 2022-05-27 | High-transmittance wear-resistant light-transmitting material and preparation method and application thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN114934264A (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2240114A (en) * | 1990-01-18 | 1991-07-24 | Stc Plc | Film nucleation process for growing diamond film |
| WO2001018284A1 (en) * | 1999-09-03 | 2001-03-15 | Lionel Vandenbulcke | Method for making a metal part coated with diamond and metal part obtained by said method |
| CN105296926A (en) * | 2015-12-04 | 2016-02-03 | 中国航空工业集团公司洛阳电光设备研究所 | Hard anti-reflection composite film type optical window and preparation method thereof |
| CN106521414A (en) * | 2016-12-13 | 2017-03-22 | 中国建筑材料科学研究总院 | Ultra-hard diamond-like antireflection film, infrared material comprising antireflection film as well as preparation method and application of antireflection film |
-
2022
- 2022-05-27 CN CN202210592494.1A patent/CN114934264A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2240114A (en) * | 1990-01-18 | 1991-07-24 | Stc Plc | Film nucleation process for growing diamond film |
| WO2001018284A1 (en) * | 1999-09-03 | 2001-03-15 | Lionel Vandenbulcke | Method for making a metal part coated with diamond and metal part obtained by said method |
| CN105296926A (en) * | 2015-12-04 | 2016-02-03 | 中国航空工业集团公司洛阳电光设备研究所 | Hard anti-reflection composite film type optical window and preparation method thereof |
| CN106521414A (en) * | 2016-12-13 | 2017-03-22 | 中国建筑材料科学研究总院 | Ultra-hard diamond-like antireflection film, infrared material comprising antireflection film as well as preparation method and application of antireflection film |
Non-Patent Citations (2)
| Title |
|---|
| 邱东江 等: ""RF-HFCVD 生长高质量纳米金刚石薄膜"" * |
| 邱东江 等: ""石英衬底上生长的高光学质量的纳米金刚石薄膜"" * |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US9970101B2 (en) | Metal-free CVD coating of graphene on glass and other dielectric substrates | |
| CN106587030B (en) | A kind of method that atmospheric cryochemistry vapor deposition prepares graphene film | |
| CN109023291B (en) | Graphene film and preparation method and application thereof | |
| CN103924208B (en) | A kind of method preparing multi-layer graphene thin film | |
| CN111364017A (en) | Aluminum nitride film and preparation method and application thereof | |
| US5618389A (en) | Process for producing transparent carbon nitride films | |
| CN114507858B (en) | Preparation method of long-life ultra-nano diamond periodic multilayer coating cutter | |
| US5837322A (en) | Deposition of polycrystalline diamond film on zinc sulfide substrate having nitride interlayer | |
| CN114934264A (en) | High-transmittance wear-resistant light-transmitting material and preparation method and application thereof | |
| Sahoo et al. | Structural and mechanical characterization of diamond like carbon films grown by microwave plasma CVD | |
| Kumar et al. | Versatile microwave PECVD technique for deposition of DLC and other ordered carbon nanostructures | |
| CN109850908B (en) | Preparation method and product of silicon dioxide/graphene compound | |
| CN109850879A (en) | A kind of high-quality graphene film and preparation method thereof | |
| CN113213774B (en) | Graphene glass and preparation method thereof | |
| Huang et al. | Growth of diamond films with high surface smoothness | |
| CN1294293C (en) | Auxiliary grid hot wire chemical vapor deposition process for preparing nano-diamond thin film | |
| CN114959638A (en) | Preparation method of germanium carbide film | |
| JPS62180073A (en) | Amorphous carbon film and its production | |
| TWI554633B (en) | A diamond-like carbon film and manufacturing method thereof | |
| Marton et al. | Effect of argon and substrate bias on diamond thin film surface morphology | |
| Qi-Liang et al. | Growth and Characteristics of Freestanding Hemispherical Diamond Films by Microwave Plasma Chemical Vapor Deposition | |
| Park et al. | Structural characterization of diamond thin films prepared by plasma jet | |
| WO2024137645A1 (en) | Smooth surface diamond composite films | |
| US20240208857A1 (en) | Glass Modification Process Usable With CVD Diamond Deposition | |
| US3556834A (en) | Low temperature method for producing amorphous boron-carbon deposits |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20220823 |
|
| RJ01 | Rejection of invention patent application after publication |