CN114927878A - Multifunctional terahertz metamaterial polarization conversion device based on Ni-Mn-Sn shape memory alloy - Google Patents
Multifunctional terahertz metamaterial polarization conversion device based on Ni-Mn-Sn shape memory alloy Download PDFInfo
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- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
- H01Q15/0086—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices having materials with a synthesized negative refractive index, e.g. metamaterials or left-handed materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
- H01Q15/0013—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective
- H01Q15/002—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective said selective devices being reconfigurable or tunable, e.g. using switches or diodes
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- H—ELECTRICITY
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- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
- H01Q15/0013—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective
- H01Q15/0026—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective said selective devices having a stacked geometry or having multiple layers
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- H—ELECTRICITY
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- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/24—Polarising devices; Polarisation filters
- H01Q15/242—Polarisation converters
- H01Q15/244—Polarisation converters converting a linear polarised wave into a circular polarised wave
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Abstract
A multifunctional terahertz metamaterial polarization conversion device based on Ni-Mn-Sn shape memory alloy. The invention relates to the field of terahertz metamaterial functional devices, in particular to a multifunctional terahertz metamaterial polarization conversion device based on Ni-Mn-Sn shape memory alloy. The invention aims to solve the problems of complex structure, limited regulation and control range and single function of a device in the existing terahertz metamaterial. The device is formed by a plurality of structural units which are periodically arrayed; the single structural unit is of a three-layer structure and sequentially comprises an alloy resonator, a polyimide dielectric layer and a metal substrate from top to bottom; the alloy resonator is a strip-shaped structure along the diagonal direction, the center of the strip-shaped structure is formed by fixed square metal copper, and two sides of the square metal copper along the diagonal direction are provided with two cantilever structures formed by deformable Ni-Mn-Sn shape memory alloy. The invention is used for a multifunctional terahertz metamaterial device capable of being dynamically regulated and controlled.
Description
Technical Field
The invention relates to the field of terahertz metamaterial functional devices, in particular to a multifunctional terahertz metamaterial polarization conversion device based on Ni-Mn-Sn shape memory alloy.
Background
The polarization manipulation of terahertz waves plays an important role in the fields of wireless communication, virus detection, polarization imaging, aerospace and the like. Conventional polarization converters are typically based on the faraday effect or birefringence of the natural crystal. However, since the electromagnetic response of natural materials is generally weak, a long distance is generally required to obtain phase accumulation, which is not favorable for miniaturization and integration of the polarization transformer. Furthermore, the efficiency of conventional devices is generally insufficient due to impedance mismatch problems caused by lack of magnetic response in natural materials. The metamaterial (MMs) is an artificial material consisting of a metal or dielectric material sub-wavelength microarray, and provides a good solution for the regulation and control of terahertz waves due to the singular electromagnetic response characteristic of the metamaterial. Therefore, much effort is expended to apply metamaterial devices to the manipulation of polarization states in various terahertz waves. However, in the past, terahertz components based on metamaterial are all made of metal materials, and after the processing size is fixed, the functions of the components are difficult to actively change in practical application, which limits the applicability of the components in practical application. Therefore, the development of the actively-controlled terahertz component has important research significance.
Currently, the active regulation of terahertz waves is mainly realized based on two different modes: based on the change in the properties of the material itself and on the effect of structural deformations. However, each of these two active control methods has advantages and disadvantages: based on the change of material property, only the conductivity of the material is usually changed, so that only the amplitude of the response function is adjusted, and the tuning range is severely limited; methods based on structural deformation effects often result in metamaterials stacked from multiple layers, complicating manufacturing and hindering practical applications. In addition, the methods are limited to actively controlling a single parameter, so that the currently researched terahertz active control device has a single function, namely, the terahertz active control device can only realize a single function under a single external field. But the single function is difficult to adapt to the requirements of the current technology development. Therefore, on a single device, the regulation and control of multiple physical fields and the multifunctional regulation and control of terahertz waves are realized, which is one of the development fronts of the current terahertz technology and is a practical requirement of practical application.
Disclosure of Invention
The invention provides a multifunctional terahertz metamaterial polarization conversion device based on Ni-Mn-Sn shape memory alloy, which aims to solve the problems of complex structure, limited regulation and control range and single device function of the existing terahertz metamaterial.
The multifunctional terahertz metamaterial polarization conversion device based on the Ni-Mn-Sn shape memory alloy is formed by periodically arraying a plurality of structural units; the single structural unit is of a three-layer structure and sequentially comprises a Ni-Mn-Sn shape memory alloy resonator, a polyimide dielectric layer and a metal substrate from top to bottom; the Ni-Mn-Sn shape memory alloy resonator is of a strip-shaped structure along the diagonal direction, the center of the strip-shaped structure is formed by fixed square metal copper, and two sides of the square metal copper along the diagonal direction are provided with two cantilever structures formed by deformable Ni-Mn-Sn shape memory alloy; the period of the structural unit of the periodic array is 68-72 mu m, the thickness of the Ni-Mn-Sn shape memory alloy resonator is 2-4 mu m, the side length is 30-35 mu m, the line width is 3-4 mu m, the thickness of the polyimide dielectric layer is 27-30 mu m, and the thickness of the metal substrate is 0.2-2 mu m.
The invention has the beneficial effects that:
1. the invention utilizes the magnetic field to drive the recoverable superelasticity deformation of the metamaterial in the structural unit, and realizes the macroscopic structure change of the material in the structural unit, thereby tuning the polarization state of the metamaterial. Compared with the traditional regulation, the method has the advantages of quick response and non-contact control.
2. The invention can realize the function of the rotatable half-wave plate. The wide-angle polarization rotation of 80 degrees can be realized, the relative bandwidth is 61.3 percent, and the transmission efficiency is high. On the basis of rotating the half-wave plate, the function of a quarter-wave plate can be realized, and the conversion between line-circularly polarized light can be carried out on incident light.
Drawings
FIG. 1 is a schematic three-dimensional structure diagram of a multifunctional terahertz metamaterial polarization conversion device based on Ni-Mn-Sn shape memory alloy according to one embodiment; wherein 1 is a metal substrate, 2 is a polyimide dielectric layer, and 3 is a Ni-Mn-Sn shape memory alloy resonator;
FIG. 2 is a top view of a structural unit; wherein 3-1 is square metal copper, and 3-2 is a cantilever structure;
FIG. 3 is a schematic view showing that a bending deformation angle is-20 degrees when a magnetic field is applied, and a cantilever structure made of a deformable Ni-Mn-Sn shape memory alloy changes with the magnetic field;
FIG. 4 is a schematic diagram showing the variation of a cantilever structure made of a deformable Ni-Mn-Sn shape memory alloy with a magnetic field, without deformation when the magnetic field is applied;
FIG. 5 is a schematic view showing a cantilever structure made of a deformable Ni-Mn-Sn shape memory alloy having a bending deformation angle of 20 DEG in response to a magnetic field;
FIG. 6 is a reflection amplitude curve of a cantilever structure made of a deformable Ni-Mn-Sn shape memory alloy without deformation;
FIG. 7 is a reflection amplitude curve of a cantilever structure made of deformable Ni-Mn-Sn shape memory alloy under a bending deformation angle of 20 °;
FIG. 8 is a reflection amplitude curve at-20 ° bending deformation angle of a cantilever structure made of deformable Ni-Mn-Sn shape memory alloy;
FIG. 9 is a polarization rotation angle curve of a cantilever structure made of a deformable Ni-Mn-Sn shape memory alloy without deformation;
FIG. 10 is a polarization rotation angle curve of a cantilever structure made of deformable Ni-Mn-Sn shape memory alloy with a bending deformation angle of 20 °;
FIG. 11 is a polarization rotation angle curve of a cantilever structure made of deformable Ni-Mn-Sn shape memory alloy with a bending deformation angle of-20 °;
FIG. 12 is a polarization conversion rate curve of polarized light when the multifunctional terahertz metamaterial polarization converter based on Ni-Mn-Sn shape memory alloy is emitted without deformation;
FIG. 13 is a polarization degree curve of the emergent polarized light of the multifunctional terahertz metamaterial polarization converter based on the Ni-Mn-Sn shape memory alloy under the condition of no deformation;
FIG. 14 is an ellipticity curve of polarized light when a multifunctional terahertz metamaterial polarization converter based on Ni-Mn-Sn shape memory alloy is emitted under the condition of no deformation;
FIG. 15 is a phase difference curve of polarized light when the multifunctional terahertz metamaterial polarization converter based on Ni-Mn-Sn shape memory alloy is emitted without deformation;
FIG. 16 is a polarization rotation angle change diagram of deformation of a multifunctional terahertz metamaterial polarization converter based on Ni-Mn-Sn shape memory alloy;
FIG. 17 is a linear polarization degree change diagram of deformation of the multifunctional terahertz metamaterial polarization converter based on the Ni-Mn-Sn shape memory alloy;
FIG. 18 is a polarization conversion rate change diagram of deformation of a multifunctional terahertz metamaterial polarization converter based on Ni-Mn-Sn shape memory alloy;
FIG. 19 is an ellipticity change diagram of deformation of a multifunctional terahertz metamaterial polarization converter based on Ni-Mn-Sn shape memory alloy.
Detailed Description
The first embodiment is as follows: as shown in the attached drawings, the multifunctional terahertz metamaterial polarization conversion device based on the Ni-Mn-Sn shape memory alloy of the embodiment is formed by periodically arraying a plurality of structural units; the single structural unit is of a three-layer structure and sequentially comprises a Ni-Mn-Sn shape memory alloy resonator, a polyimide dielectric layer and a metal substrate from top to bottom; the Ni-Mn-Sn shape memory alloy resonator is of a strip-shaped structure along the diagonal direction, the center of the strip-shaped structure is formed by fixed square metal copper, and two sides of the square metal copper along the diagonal direction are provided with two cantilever structures formed by deformable Ni-Mn-Sn shape memory alloy; the period of the structural unit of the periodic array is 68-72 mu m, the thickness of the Ni-Mn-Sn shape memory alloy resonator is 2-4 mu m, the side length is 30-35 mu m, the line width is 3-4 mu m, the thickness of the polyimide dielectric layer is 27-30 mu m, and the thickness of the metal substrate is 0.2-2 mu m.
Although conventional heat-driven shape memory alloys can produce large reversible recovery strains and stresses, their response frequency (about 1Hz) is quite limited. The magnetic drive shape memory alloy adopted by the embodiment has higher response frequency (about kHz) compared with the traditional thermal control shape memory alloy, and the output strain of the magnetic induced strain is higher than that of the magnetostrictive material and the piezoelectric material by more than one order of magnitude. Through the magnetic driving martensite phase transformation of the NiMnSn alloy under the action of an external magnetic field, the dielectric property and the shape of the material can be rapidly changed. By utilizing the characteristics, the NiMnSn alloy and the metamaterial are designed and combined, and the dual modulation of the material characteristics and the material structure under the action of a magnetic field can be realized.
According to the embodiment, by designing a brand-new metamaterial device based on the NiMnSn shape memory alloy and utilizing the adjustability of deformation of the shape memory alloy before and after martensitic transformation, the metamaterial device is simple in design structure and convenient to process, can realize dual functions of linearly polarized light rotation and linearly-circularly polarized light conversion with excellent performance in the same device, has dynamically adjustable performance, and greatly meets the application requirements on terahertz regulation.
Most of the structural units of the metamaterial are made of metals such as gold, silver, aluminum and the like, once the structure is fixed, the tuning performance is limited, and the process complexity is increased by combining with other tunable materials.
The Ni-Mn-Sn magnetic memory alloy of the embodiment not only has the typical characteristics of the traditional temperature control shape memory alloy, but also can generate the shape memory effect induced by a magnetic field, and is a novel intelligent material integrating 'sensing' and 'driving'. The adjustment of the working temperature of the alloy can be completed by designing the components of the alloy and the preparation process.
The thickness of the polyimide dielectric layer is controlled in the embodiment, and the phase difference generated by too large or too small can reach 180 degrees and 90 degrees; meanwhile, in order to prevent electromagnetic waves from penetrating through the metal substrate and reduce transmission efficiency, the thickness of the metal substrate is limited. The length of the periodic structure determines the working frequency range of the device, meanwhile, the range of the side length cannot be larger than the periodic length, and finally, the thickness of the resonator cannot be too smaller than the line width in order to enable the shape memory alloy to be better subjected to bending deformation.
The second embodiment is as follows: the first difference between the present embodiment and the specific embodiment is: the dielectric constant epsilon of the polyimide dielectric layer is 3.5, and the dielectric loss is 2 multiplied by 10 -3 . Other steps and parameters are the same as those in the first embodiment.
Since the polyimide of the present embodiment has a stable dielectric constant ∈ of 3.5, the refractive index is stable; the low dielectric loss of polyimide means that the loss rate of the polyimide to electromagnetic waves is low, and the transmission of the electromagnetic waves in the dielectric layer is facilitated.
The third concrete implementation mode: the present embodiment differs from the first or second embodiment in that: the period of the structural units of the periodic array was 70 μm. Other steps and parameters are the same as those in the first or second embodiment.
The fourth concrete implementation mode: the difference between this embodiment and one of the first to third embodiments is: the thickness of the Ni-Mn-Sn shape memory alloy resonator is 3 mu m, the side length is 35 mu m, and the line width is 4 mu m. Other steps and parameters are the same as those in one of the first to third embodiments.
The fifth concrete implementation mode: the difference between this embodiment and one of the first to fourth embodiments is: the thickness of the polyimide dielectric layer is 27.5 mu m. Other steps and parameters are the same as those in one of the first to fourth embodiments.
The sixth specific implementation mode is as follows: the difference between this embodiment and one of the first to fifth embodiments is: the metal substrate is a metal copper substrate. Other steps and parameters are the same as those in one of the first to fifth embodiments.
The seventh embodiment: the difference between this embodiment and one of the first to sixth embodiments is: the thickness of the metal substrate is 0.5 μm. Other steps and parameters are the same as those in one of the first to sixth embodiments.
The specific implementation mode is eight: the present embodiment differs from one of the first to seventh embodiments in that: the multifunctional terahertz metamaterial polarization conversion device based on the Ni-Mn-Sn shape memory alloy changes the rotation angle of a cantilever structure formed by the Ni-Mn-Sn shape memory alloy by applying an external magnetic field. Other steps and parameters are the same as those in one of the first to seventh embodiments.
The beneficial effects of the present invention are demonstrated by the following examples:
the first embodiment is as follows: the multifunctional terahertz metamaterial polarization conversion device based on the Ni-Mn-Sn shape memory alloy is formed by a plurality of structural units in a periodic array; the single structural unit is of a three-layer structure and sequentially comprises a Ni-Mn-Sn shape memory alloy resonator 3, a polyimide dielectric layer 2 and a metal substrate 1 from top to bottom; the Ni-Mn-Sn shape memory alloy resonator is of a strip-shaped structure along the diagonal direction, the center of the strip-shaped structure is formed by fixed square metal copper 3-2, and two sides of the square metal copper 3-2 along the diagonal direction are provided with two cantilever structures 3-1 formed by deformable Ni-Mn-Sn shape memory alloy; the period p of the structural unit of the periodic array is 70 mu m, and the thickness h of the Ni-Mn-Sn shape memory alloy resonator 3 3 μm, 35 μm side length l, 4 μm line width w, and thickness h of the polyimide dielectric layer 2 Thickness h of metal substrate 27.5 μm 1 ＝0.5μm。
As shown in figures 3-5, the multifunctional terahertz metamaterial polarization conversion device based on the Ni-Mn-Sn shape memory alloy has the advantages that the restorable elastic deformation of the NiMnSn shape memory alloy can be realized by adjusting the excitation of an external magnetic field, and the magnetic field and the deformation of a resonator have a specific relation. Thus, dynamic modulation of the electric dipole resonance of a NiMnSn shape memory alloy based metamaterial can be achieved by varying the external magnetic field strength.
As can be seen from fig. 6 to 11, the present embodiment can change the electromagnetic performance by changing the shape of the NiMnSn shape memory alloy resonator cantilever. The cantilever based on the NiMnSn shape memory alloy terahertz metamaterial can be bent and changed by external magnetic field excitation to form different reconstruction structures, so that the information such as the frequency, the bandwidth, the amplitude, the phase and the like of a transmission curve can be flexibly regulated and controlled. When the NiMnSn does not generate bending deformation, the cross polarization reflection amplitude is dominant in the range of 1.04-1.96 THz, and the polarization rotation angle of the metamaterial is 90 degrees; when the bending deformation is changed into 20 degrees, the cross polarization reflection amplitude of the metamaterial is close to the value of the co-polarization reflection amplitude, and the polarization rotation angle is 50 degrees; when the bending deformation is changed to-20 degrees, the cross polarization reflection amplitude of the metamaterial is slightly larger than the common polarization reflection amplitude, and the polarization rotation angle is-60 degrees.
It can be seen from fig. 12 and 13 that when NiMnSn is not deformed, the polarization conversion rate and the linear polarization degree in the 1.04-1.96 THz working frequency are both greater than 90%, which indicates that high-efficiency linear polarization rotation can be achieved in the frequency range.
As can be seen from fig. 14 and 15, when the bending angle of the cantilever beam of the NiMnSn shape memory alloy resonator is 0 °, the ellipticity of the emergent light at 0.89THz is close to-1, and the phase difference is about-90 °, and the emergent light is right-handed circularly polarized light; the ellipticity at the 2.09THz position is close to 1, the phase difference is about 90 degrees, and emergent light at the time is left-handed circularly polarized light; the ellipticity of the device is close to 0 in the range of 1.04-1.96 THz, the phase difference is about 180 degrees, and emergent light in the frequency range is linearly polarized light.
As can be seen from fig. 16 to 19, when the cantilever beam based on the NiMnSn shape memory alloy metamaterial is subjected to bending deformation, the polarization conversion rate (incident wave is converted into the cross polarization reflection mode) is greater than 90% in the broadband range of 1.04 to 1.96THz, and the ellipticity of the device is not changed. Meanwhile, the linear polarization degree ratio is larger than 0.96 within the frequency range of 1.04-1.96 THz, so the emergent light can be regarded as linearly polarized light. The polarization converter can conveniently rotate the polarization direction of linearly polarized light by any desired angle in the range of 50 ° to 90 ° and-90 ° to-60 ° in the transmission mode as the metal thin film is subjected to bending deformation. At the range of 0.89THz and 2.09THz, the ellipticity and the phase difference of the device are not changed along with the structural deformation, so that the device always has the function of converting linear-circularly polarized light in the frequency range.
In conclusion, when the NiMnSn shape memory alloy generates martensite phase transformation under the action of an external magnetic field, the metamaterial can realize high-efficiency and multifunctional terahertz polarization modulation.
Claims (8)
1. A multifunctional terahertz metamaterial polarization conversion device based on Ni-Mn-Sn shape memory alloy is characterized in that the multifunctional terahertz metamaterial polarization conversion device based on Ni-Mn-Sn shape memory alloy is formed by a plurality of structural units in a periodic array; the single structural unit is of a three-layer structure and sequentially comprises a Ni-Mn-Sn shape memory alloy resonator, a polyimide dielectric layer and a metal substrate from top to bottom; the Ni-Mn-Sn shape memory alloy resonator is of a strip structure along the diagonal direction, the center of the strip structure is formed by fixed square metal copper, and two sides of the square metal copper along the diagonal direction are provided with two cantilever structures formed by deformable Ni-Mn-Sn shape memory alloy; the period of the structural unit of the periodic array is 68-72 mu m, the thickness of the Ni-Mn-Sn shape memory alloy resonator is 2-4 mu m, the side length is 30-35 mu m, the line width is 3-4 mu m, the thickness of the polyimide dielectric layer is 27-30 mu m, and the thickness of the metal substrate is 0.2-2 mu m.
2. The Ni-Mn-Sn shape memory alloy-based multifunctional terahertz metamaterial polarization conversion device as claimed in claim 1, wherein the dielectric constant epsilon of the polyimide dielectric layer is 3.5, the dielectric loss is 2 x 10 -3 。
3. The Ni-Mn-Sn shape memory alloy-based multifunctional terahertz metamaterial polarization conversion device according to claim 1, wherein the period of the structural units of the periodic array is 70 μm.
4. The multifunctional terahertz metamaterial polarization conversion device based on Ni-Mn-Sn shape memory alloy as claimed in claim 1, wherein the Ni-Mn-Sn shape memory alloy resonator has a thickness of 3 μm, a side length of 35 μm and a line width of 4 μm.
5. The multifunctional terahertz metamaterial polarization conversion device based on the Ni-Mn-Sn shape memory alloy as claimed in claim 1, wherein the thickness of the polyimide dielectric layer is 27.5 μm.
6. The multifunctional terahertz metamaterial polarization conversion device based on Ni-Mn-Sn shape memory alloy as claimed in claim 1, wherein the metal substrate is a metal copper substrate.
7. The Ni-Mn-Sn shape memory alloy-based multifunctional terahertz metamaterial polarization conversion device according to claim 1, wherein the thickness of the metal substrate is 0.5 μm.
8. The Ni-Mn-Sn shape memory alloy-based multifunctional terahertz metamaterial polarization conversion device according to claim 1, wherein the Ni-Mn-Sn shape memory alloy-based multifunctional terahertz metamaterial polarization conversion device changes the rotation angle of a cantilever structure made of the Ni-Mn-Sn shape memory alloy by applying an external magnetic field.
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