CN114927548A - Display panel and display device - Google Patents

Abstract

The invention discloses a display panel and a display device, the display panel comprises a display area, at least part of the display area is a transparent display area, the transparent display area comprises a plurality of non-light-transmitting areas and light-transmitting areas, the display panel comprises: a base substrate; the pixel circuit layer is positioned on one side of the substrate, and comprises a plurality of thin film transistors; a plurality of light emitting elements positioned on one side of the pixel circuit layer away from the substrate; in the transparent display area, the thin film transistor and the light emitting element are both positioned in the non-light-transmitting area; the shading layer is arranged on one side, far away from the substrate base plate, of the thin film transistor and covers the thin film transistor, so that the light emitted by the light emitting element and the light incident from the outside are prevented from affecting the thin film transistor, the same driving characteristics of the thin film transistors are ensured, the light emitting of the light emitting element is uniform, the display color cast is improved, the service life of a TFT (thin film transistor) is prolonged, and the visual imaging effect of the display panel is improved.

Description

Display panel and display device

Technical Field

The embodiment of the invention relates to the technical field of display, in particular to a display panel and a display device.

Background

In the display panel, display light emitted from the light emitting element is inevitably reflected to the pixel circuit layer, and due to uneven arrangement of Thin Film Transistors (TFTs) in the pixel circuit layer, the amount of display light reaching each TFT is different, and the TFTs in the pixel circuit layer are sensitive to self-luminescence of the light emitting element, which easily causes differences in characteristics of different TFTs, causes differences in luminance of the light emitting element driven by different TFTs, and causes degradation of display characteristics, such as color shift and different lifetimes.

Disclosure of Invention

The invention provides a display panel and a display device, wherein a light shielding layer is arranged between a light-emitting element and a thin film transistor and covers the thin film transistor, so that the influence of display light rays emitted by the light-emitting element and light rays incident from the outside on the thin film transistor is avoided, the characteristic difference of different thin film transistors caused by different photosensitive quantities is reduced, the degradation of the display characteristics is reduced, and the visual display effect of the display panel is ensured.

In a first aspect, an embodiment of the present invention provides a display panel, including a display area, where at least a partial area of the display area is a transparent display area, where the transparent display area includes a plurality of non-transparent areas and transparent areas, and the display panel includes:

a substrate base plate;

the pixel circuit layer is positioned on one side of the substrate base plate and comprises a plurality of thin film transistors;

a plurality of light emitting elements located on one side of the pixel circuit layer away from the substrate;

in the transparent display area, the thin film transistor and the light-emitting element are both positioned in the non-light-transmitting area;

and the shading layer is positioned on one side of the thin film transistor, which is far away from the substrate base plate, and covers the thin film transistor along the direction vertical to the substrate base plate.

In a second aspect, an embodiment of the present invention further provides a display device, where the display device further includes the display panel provided in the first aspect.

The display panel provided by the embodiment of the invention comprises a display area, at least part of the display area is a transparent display area, the transparent display area comprises a plurality of non-light-transmitting areas and light-transmitting areas, and the display panel comprises: a substrate base plate; a pixel circuit layer located at one side of the substrate, the pixel circuit layer including a plurality of thin film transistors; a plurality of light emitting elements positioned on one side of the pixel circuit layer away from the substrate; in the transparent display area, the thin film transistor and the light emitting element are both positioned in the non-light-transmitting area; the light shielding layer is arranged on one side, far away from the substrate base plate, of the thin film transistor, and the vertical projection of the light shielding layer on the plane of the substrate base plate covers the vertical projection of the thin film transistor on the plane of the substrate base plate, so that the influence of light emitted by the light emitting element and light incident from the outside on the thin film transistor is prevented, the thin film transistors are ensured to have the same driving characteristics, the light emitting of the light emitting element is uniform, the display color cast is improved, the service life of a TFT (thin film transistor) is prolonged, and the visual imaging effect of the display panel is improved.

Drawings

Fig. 1 is a schematic structural diagram of a display panel provided in the related art;

FIG. 2 is a schematic cross-sectional view along AA' of FIG. 1;

fig. 3 is a schematic structural diagram of a display panel according to an embodiment of the present invention;

FIG. 4 is a schematic cross-sectional view taken along direction BB' in FIG. 3;

FIG. 5 is another schematic cross-sectional view taken along direction BB' in FIG. 3;

FIG. 6 is a schematic cross-sectional view taken along direction CC' of FIG. 3;

FIG. 7 is another schematic cross-sectional view taken along direction CC' of FIG. 3;

FIG. 8 is another schematic cross-sectional view taken along direction CC' of FIG. 3;

FIG. 9 is a schematic view of a display panel in the region M of FIG. 3;

FIG. 10 is another schematic cross-sectional view taken along direction BB' in FIG. 3;

FIG. 11 is another schematic cross-sectional view taken along direction BB' in FIG. 3;

FIG. 12 is a schematic structural diagram of another display panel according to an embodiment of the present invention;

fig. 13 is a schematic structural diagram of another display device according to an embodiment of the present invention.

Detailed Description

The present invention will be described in further detail with reference to the drawings and examples. It is to be understood that the specific embodiments described herein are merely illustrative of the invention and are not limiting of the invention. It should be further noted that, for the convenience of description, only some of the structures related to the present invention are shown in the drawings, not all of the structures.

Fig. 1 is a schematic structural diagram of a display panel provided in the related art; fig. 2 is a schematic cross-sectional view along AA' of fig. 1. As shown in fig. 1 and 2, a display panel 100 in the related art includes a substrate 10, and a pixel circuit layer 11 and a light emitting element 12 which are sequentially located on one side of the substrate 10, the pixel circuit layer 11 being used for driving the light emitting element 12 to emit light; the pixel circuit layer 11 includes a plurality of Thin Film Transistors (TFTs) 13; the display panel 100 further includes a display region 101, at least a partial region of the display region 101 is a transparent display region 102, the transparent display region 102 includes a plurality of non-transparent regions 103 and transparent regions 104, the non-transparent regions 103 are used for disposing the light emitting elements 12 and the TFTs (13), the transparent regions 104 are used for disposing the detecting devices, or for transparent display, and the display panel 100 further includes other film layers, such as a buffer layer, a planarization layer, an interlayer insulating layer, a film encapsulation layer, and the like (not shown in the figure), on a side of the light emitting elements 12 away from the substrate 10. Part of light emitted by the light emitting element 12 is easy to be reflected by other film layers to reach the thin film transistor 13, and the external light S incident from the light transmitting area 104 easily passes through the display panel to reach the thin film transistor 13, and the light easily causes the change of the driving characteristics of the thin film transistor 13, and when the light sensing quantities of the thin film transistors 13 are different, the characteristic difference is large, so that the problems of uneven display brightness, color cast, short service life of the TFT and the like are easily caused.

Based on the above-described technical problems, the inventors have studied and found that the influence of light on the driving characteristics of the thin film transistor can be prevented by adding a light-shielding layer above the thin film transistor. Based on this, the inventors further studied the technical solutions of the embodiments of the present invention. Specifically, an embodiment of the present invention provides a display panel including a display area, at least a partial area of the display area is a transparent display area, the transparent display area includes a plurality of non-transparent areas and transparent areas, the display panel includes: a substrate base plate; a pixel circuit layer located at one side of the substrate, the pixel circuit layer including a plurality of thin film transistors; a plurality of light-emitting elements positioned on one side of the pixel circuit layer away from the substrate; in the transparent display area, the thin film transistor and the light-emitting element are both positioned in the non-light-transmitting area; and the shading layer is positioned on one side of the thin film transistor, which is far away from the substrate base plate, and covers the thin film transistor along the direction vertical to the substrate base plate.

By adopting the technical scheme, the light shielding layer is arranged on one side of the thin film transistor far away from the substrate base plate, and the vertical projection of the light shielding layer on the plane of the substrate base plate covers the vertical projection of the thin film transistor on the plane of the substrate base plate, so that the light emitted by the light-emitting element and the influence of the external light on the thin film transistor are prevented, all the thin film transistors have the same driving characteristic, the light emission uniformity of the light-emitting element is ensured, the display color cast is improved, the service life of a TFT (thin film transistor) is prolonged, and the visual imaging effect of the display panel is improved.

The above is the core idea of the present invention, and the technical solution in the embodiment of the present invention will be clearly and completely described below with reference to the drawings in the embodiment of the present invention. All other embodiments obtained by a person of ordinary skill in the art based on the embodiments of the present invention without any creative work belong to the protection scope of the present invention.

Fig. 3 is a schematic structural diagram of a display panel according to an embodiment of the present invention; FIG. 4 is a schematic cross-sectional view taken along direction BB' of FIG. 3; fig. 5 is a schematic cross-sectional view along direction BB' of fig. 3. Referring to fig. 3 to 5, a display panel 200 according to an embodiment of the present invention includes a display area AA, at least a partial area of the display area AA is a transparent display area a0, the transparent display area a0 includes a plurality of opaque areas a1 and a transparent area a2, and the display panel 200 includes: a base substrate 20; a pixel circuit layer 30 positioned at one side of the base substrate 20, the pixel circuit layer 30 including a plurality of thin film transistors 31; a plurality of light emitting elements 40 located on a side of the pixel circuit layer 30 away from the substrate base plate 20; in the transparent display region a0, the thin film transistor 31 and the light emitting element 40 are both located in the non-light-transmitting region a 1; and a light shielding layer 50 positioned on a side of the thin film transistor 31 away from the substrate 20, wherein the light shielding layer 50 covers the thin film transistor 31 along a direction perpendicular to the substrate (as shown in a Z direction in the figure).

Specifically, the Display panel 200 includes an Organic Light Emitting Display panel (OLED), a Light Emitting Diode Display panel (LED), a Micro Light Emitting Diode Display panel (Micro LED), and the like, and the embodiment of the invention does not specifically limit the type of the Display panel 200. The substrate 20 of the display panel may be a rigid material such as glass or silicon wafer, or may be a flexible material such as ultra-thin glass, metal foil, or polymer plastic material, and the flexible or rigid substrate 20 may block oxygen and moisture, thereby preventing moisture or impurities from diffusing into the display panel through the substrate 20.

The display panel 200 includes a display area AA, the display area AA is used for normally displaying images, at least a partial area of the display area AA is a transparent display area a0, the transparent display area a0 includes a plurality of non-transparent areas a1 and a transparent area a2, the plurality of non-transparent areas a1 can realize normally displaying images, and the transparent area a2 can selectively transmit external light to enter the display panel 200.

The Display panel 200 further includes a pixel circuit layer 30 and a plurality of Light Emitting elements 40 sequentially disposed on one side of the substrate 20, the pixel circuit includes a plurality of thin film transistors 31, the Light Emitting elements 40 include Organic Light Emitting Diodes (OLEDs), Micro LEDs, Active Matrix Organic Light Emitting Diodes (AMOLEDs), Quantum Dot Light Emitting Diodes (QLEDs), and the like, and the TFTs are used for driving the Light Emitting elements 40 to emit Light for Display. In the transparent display region a0, the thin film transistor 31 and the light emitting element 40 are both located in the non-light-transmitting region a1, and the light-transmitting area of the light-transmitting region a2 is increased to improve the operation performance of the device provided in the transparent display region a 0.

Illustratively, the structure of the pixel circuit layer 30 is illustrated by taking a top gate type thin film transistor of an OLED display panel as an example, the pixel circuit layer 30 of the display panel further includes an active layer 311 on the substrate 20; a gate insulating layer 312 on the active layer 311; a gate electrode 313 on the gate insulating layer 312; a first interlayer insulating layer 314 over the gate electrode 313, a capacitor layer 315 over the first interlayer insulating layer 314, and a second interlayer insulating layer 316 over the capacitor layer 315, wherein the interlayer insulating layer may be formed of an inorganic layer such as silicon oxide or silicon nitride; a source electrode 317 and a drain electrode 318 on the second interlayer insulating layer 316, wherein the source electrode 317 and the drain electrode 318 are electrically connected to the source region and the drain region through contact holes (not shown in the drawings), respectively, and the source electrode 317 and the drain electrode 318 may be a metal of Cr, Pt, Ru, Au, Ag, Mo, Al, W, Cu, and/or AlNd, or a metal or a conductive oxide including ITO, GIZO, GZO, IZO (InZnO), or azo (alzno); a passivation layer 319 on the source electrode 317 and the drain electrode 318 of the thin film transistor 31; the light-emitting element further comprises a planarization layer 320, which has a planarization effect, the drain electrode 318 of the thin film transistor 31 is electrically connected to the anode of the light-emitting element 40 by means of a via hole (not shown in the figure), and a metal layer and an insulating layer (not shown in the figure) are usually further included between the drain electrode 318 and the anode to ensure the via hole to connect current signal transmission, so as to drive the light-emitting element 40 to emit light.

In order to avoid that part of the display light emitted by the light emitting element 40 respectively reaches the active layer 311 of the thin film transistor 31 with different light amounts after being reflected by the film layer of the display panel, so as to generate light effects, such as generating leakage current, which causes differences in the driving characteristics of the plurality of thin film transistors 31, a patterning process is adopted to arrange a light shielding layer 50 between the pixel circuit layer 30 and the plurality of light emitting elements 40, the vertical projection of the light shielding layer 50 on the plane of the substrate 20 covers the vertical projection of each thin film transistor 31 on the plane of the substrate 20, so as to prevent part of the display light emitted by the light emitting element 40 from passing through the display panel 200 to reach the active region 311 of the thin film transistor 31, so as to avoid the generation of the light effects of the thin film transistors 31, so that each thin film transistor 31 has the same driving characteristics, ensure the uniform light emission of the light emitting elements, effectively improve the display color shift and prolong the service life of the TFT, thereby improving the visual imaging effect of the display panel. Here, the same driving characteristics mean that the driving currents for driving the light emitting elements 40 by the respective thin film transistors 31 are the same; the light shielding layer 50 may be prepared by adding a film layer, or the light shielding layer 50 may be prepared by using an existing film layer, which is not particularly limited herein.

It should be noted that "patterning" herein specifically refers to a non-integral layer structure, i.e., a structure formed by first forming an integral layer of material and then etching a specific shape in a manufacturing process; the display device provided in this embodiment further includes other film layers, such as a pixel defining layer 321, a film encapsulating layer 322, and the like, which together function to realize the display function of the display device, wherein the film encapsulating layer 322 may include at least three layers, which are not described herein one by one.

To sum up, the display panel provided by the embodiment of the present invention includes a display area, at least a partial area of the display area is a transparent display area, the transparent display area includes a plurality of non-transparent areas and transparent areas, and the display panel includes: a base substrate; the pixel circuit layer is positioned on one side of the substrate, and comprises a plurality of thin film transistors; a plurality of light emitting elements positioned on one side of the pixel circuit layer away from the substrate; in the transparent display area, the thin film transistor and the light emitting element are both positioned in the non-light-transmitting area; the light shielding layer is arranged on one side, far away from the substrate base plate, of the thin film transistor, and the vertical projection of the light shielding layer on the plane of the substrate base plate covers the vertical projection of the thin film transistor on the plane of the substrate base plate, so that the influence of light emitted by the light emitting element and light incident from the outside on the thin film transistor is prevented, the thin film transistors are ensured to have the same driving characteristics, the light emitting of the light emitting element is uniform, the display color cast is improved, the service life of a TFT (thin film transistor) is prolonged, and the visual imaging effect of the display panel is improved.

FIG. 6 is a schematic cross-sectional view taken along direction CC' of FIG. 3; FIG. 7 is another schematic cross-sectional view taken along direction CC' of FIG. 3; fig. 8 is another schematic cross-sectional view taken along direction CC' in fig. 3. As a possible implementation manner, as shown in fig. 3, 6 to 8, optionally, the light shielding layer 50 includes a metal material, and the light shielding layer 50 is electrically connected to the fixed voltage terminal 32.

Specifically, the light-shielding layer 50 may be made of a metal material, such as Au, Ag, Cu, Ni, Pt, Pd, Al, Mo, W, Ti, Al — Nd alloy, Mo — W alloy, etc., but is not limited thereto, and has a good light-shielding effect, and can block a part of display light emitted from the light-emitting element 40 and light incident from the outside from passing through the display panel 200 to reach the thin film transistor 31; can be through the mode that punches (as shown in the dotted line circle in the picture), be connected light shield layer 50 and fixed voltage end 32 electricity, parallelly connected with metal light shield layer 50 through fixed voltage end 32, can reduce the resistance of fixed voltage end 32, under the same circumstances of electric current, resistance reduces, and the pressure drop reduces, can effectively reduce the pressure drop on the fixed voltage end 32 circuit, reduces display panel's consumption, and then improves display panel's luminance homogeneity. The fixed voltage terminal 32 refers to a voltage terminal for stabilizing voltage in the display panel, such as a power voltage input terminal, a power voltage output terminal, and the like.

As a possible implementation manner, with reference to fig. 3 and fig. 6 to fig. 8, the pixel circuit layer 30 includes a first power voltage trace 33 and a second power voltage trace 34, the voltage of the first power voltage trace 33 is greater than the voltage 34 of the second power voltage trace, and the fixed voltage terminal 32 includes the first power voltage trace 33 and the second power voltage trace 34.

Specifically, the pixel circuit layer 30 includes a first power voltage trace 33 and a second power voltage trace 34, the first power voltage trace 33 may be a PVDD signal line, the second power voltage trace 34 may be a PVEE signal line, a voltage of the PVDD signal line is greater than a voltage of the PVEE signal line, and the PVDD signal line and the PVEE signal line provide a driving signal for a pixel driving circuit of the light emitting element 40 to drive the light emitting element 40 to emit light. The fixed voltage terminal 32 includes the first power voltage trace 33 or the second power voltage trace 34, and the voltages of the PVDD signal line and the PVEE signal line may be disposed in the same layer, for example, in the same layer as the metal layers of the source electrode 317 and the drain electrode 318 of the tft 31, as shown in fig. 6; or the PVDD signal line and/or the PVEE signal line are in the same layer as the metal shading layer 50 and are located on the metal layers of the source electrode 317 and the drain electrode 318 of the thin film transistor 31, as shown in fig. 7; different layers may also be provided as shown in fig. 8. By arranging the metal light shielding layer 50 to be electrically connected with the first power supply voltage routing 33 to form a parallel circuit, the resistance of the PVDD signal line can be reduced, and the voltage drop on the PVDD signal line can be reduced; the metal shading layer 50 is electrically connected with the second power voltage routing 34 to form a parallel circuit, so that the resistance of the PVEE signal line is reduced, and the voltage drop on the VEE signal line is reduced, thereby reducing the total power consumption of the display panel and ensuring the brightness uniformity of the display panel.

As a possible implementation manner, optionally, as shown with continued reference to fig. 3 to 5, the display panel 200 includes a first electrode layer 41, a light emitting layer 42, and a second electrode layer 43 sequentially stacked in a direction away from the substrate base plate 20; the first electrode layer 41 includes a plurality of first electrodes 411 corresponding to the light emitting elements 40, and the second electrode layer 43 includes a plurality of openings 431 corresponding to the light transmitting regions a 2.

Specifically, taking the example that the display panel 200 is an organic light emitting display panel (OLED) and the light emitting element 40 is an organic light emitting diode, the display panel 200 includes a first electrode layer 41, a light emitting layer 42, and a second electrode layer 43 sequentially stacked in a direction away from the substrate 20. The first electrode layer 41 includes a plurality of first electrodes 411 corresponding to the light emitting elements 40, and the first electrodes 411 are anodes of the light emitting elements 40; the second electrode layer 43 is prepared in a whole layer, the cathode of the light emitting device 40 is formed in the non-light-transmitting region a1, and a plurality of openings 431 corresponding to the light-transmitting region a2 are formed in the light-transmitting region a2 to satisfy the requirement of light transmission. The first electrode layer 41 and the second electrode layer 43 may be made of a transparent conductive material, such as ITO (indium tin oxide), IZO (indium zinc oxide), ITO/Ag/ITO, etc.; the light-emitting material of the light-emitting layer 42 may be a low-molecular or high-molecular organic material.

Fig. 9 is a schematic structural diagram of a display panel in the M region of fig. 3. As a possible implementation manner, optionally, with continued reference to fig. 3-5 and 9, the non-light-transmission region a1 includes at least one pixel unit a4, the pixel unit a4 includes a first light-emitting element 43, a second light-emitting element 44, a third light-emitting element 45, a first pixel circuit 46, a second pixel circuit 47 and a third pixel circuit 48, the first light-emitting element 43 is connected with the first pixel circuit 46, the second light-emitting element 44 is connected with the second pixel circuit 47, and the third light-emitting element 45 is connected with the third pixel circuit 48; the first light emitting element 43, the second light emitting element 44, and the third light emitting element 45 are all free from overlapping with the third pixel circuit 48 in a direction perpendicular to the substrate base (as shown in the Z direction in the figure).

Specifically, the non-light-transmitting region a1 includes at least one pixel unit a4, as shown in fig. 9, the pixel unit a4 includes a first light-emitting element 43, a second light-emitting element 44, a third light-emitting element 45, a first pixel circuit 46, a second pixel circuit 47, and a third pixel circuit 48, and the first pixel circuit 46 and the first light-emitting element 43 are electrically connected for driving the first light-emitting element 43 to emit light; the second pixel circuit 47 is electrically connected to the second light emitting element 44, and drives the second light emitting unit 44 to emit light; the third pixel circuit 48 is electrically connected to the third light emitting element 45, and drives the third light emitting element 45. In the transparent display technology, since it is necessary to consider the improvement of the transmittance of the display panel as a whole, it is inevitable to compress the pixel aperture (light emitting element) to cover only 2 TFT sub-pixels, and as a feasible implementation manner, the vertical projection of the first light emitting element 43 on the plane of the substrate 20, the vertical projection of the second light emitting element 44 on the plane of the substrate 20, and the vertical projection of the third light emitting element 45 on the plane of the substrate 20 may be made to have no overlap with the vertical projection of the third pixel circuit on the plane of the substrate 20 by compressing the distances between the first light emitting element 43, the second light emitting element 44, and the third light emitting element 45 or reducing the size of each light emitting element, as shown in fig. 5 and 9; because the TFT is sensitive to self-luminescence of the light-emitting elements (43-45), the TFT compression setting is adopted, so that the quantity of light reaching the 3 rd TFT (131) by light reflected by the light-emitting elements (43-45) and light incident from the light-transmitting area A2 is different from that of light reaching the rest 2 TFT sub-pixels, the great difference between the driving characteristics of the 3 rd TFT (131) and the rest 2 TFTs is easily caused, the degradation of the driving characteristics of the TFT is caused, and the problems of uneven display brightness, color cast, short service life of the TFT and the like are caused.

Fig. 10 is another schematic cross-sectional view in the direction BB' of fig. 3. On the basis of the above embodiment, with continued reference to fig. 5 and 10, the first electrode layer 41 further includes a plurality of auxiliary electrodes 412, and the auxiliary electrodes 412 are electrically connected to the second electrode layer 42; the auxiliary electrode 412 at least partially overlaps the third pixel circuit in a direction perpendicular to the substrate base plate (as shown in the Z direction in the figure).

Specifically, the entire first electrode layer 41 may be formed first in the manufacturing process, and then the first electrode 411 and the auxiliary electrode 412 are etched, and the auxiliary electrode 412 is electrically connected to the second electrode layer 42, so as to form a parallel circuit. The third pixel circuit (not shown in the figure) includes a plurality of TFTs (131), only one TFT (131) is shown in fig. 10, a vertical projection of the auxiliary electrode 413 on the plane of the substrate 20 is overlapped with a vertical projection of at least a part of the TFTs (131) in the third pixel circuit on the plane of the substrate 20 along the Z direction in the figure, and the auxiliary electrode 412 reduces the voltage drop of the second electrode layer 42 and can be multiplexed as the light shielding layer 50, so as to reduce the light effect of the external light on the TFTs close to the light transmitting area a2, reduce the change of the driving characteristics of the TFTs, reduce the display color cast and prolong the service life of the TFTs, thereby improving the visual imaging effect of the display panel.

Further, optionally, as shown in fig. 10, the light shielding layer 50 is on the same layer as the first electrode layer 41. A separate metal electrode may be engraved between the first electrodes 411 as a light shielding layer 50 to block the influence of the reflected light of the light emitting element 40 on the driving characteristics of the TFT located thereunder, while the first electrodes 411 and the auxiliary electrode 412 are prepared.

Fig. 11 is another schematic cross-sectional view in the direction BB' of fig. 3. As a possible implementation, with continued reference to fig. 3 and 11, the display panel 200 may optionally include a first metal layer M1, a second metal layer M2, and a third metal layer M3; the first metal layer M1 and the second metal layer M2 are located on the pixel circuit layer 30, the first metal layer M1 includes a plurality of scan lines extending along a first direction, the second metal layer M2 includes a plurality of data lines extending along a second direction, and the first direction (as shown in the X direction) and the second direction (as shown in the Y direction) intersect; the light-shielding layer 50 is disposed on the same layer as the third metal layer M3.

Specifically, the display panel 200 includes a first metal layer M1, a second metal layer M2, and a third metal layer M3, the first metal layer M1 may be a gate 313 metal layer of the thin film transistor 31, the second metal layer M2 is a source electrode 317 and a drain electrode 318 metal layer of the thin film transistor 31, the third metal layer M3 may be a connection electrode layer between the drain electrode 318 metal layer and the light emitting element 40, the first metal layer M1 includes a plurality of scan lines extending along a first direction for transmitting scan signals, and the second metal layer M2 includes a plurality of data lines extending along a second direction for transmitting data signals. It should be noted that, because the selected position of the cross section of the display panel does not show that the drain electrode 318 of the thin film transistor 31 is electrically connected to the first electrode 411 of the light emitting device 40 in fig. 4, fig. 5, fig. 6-fig. 8, and fig. 10-fig. 11, in this embodiment, the third metal layer M3 is disposed between the second metal layer M2 and the first electrode layer 41, and the first electrode 411, the third metal layer M3, and the drain electrode 318 may be electrically connected by punching, so as to drive the light emitting device 40 to emit light. On the basis of the existing film layer, the light shielding layer 50 is arranged between the light emitting element 40 and the thin film transistor 31 by adopting a patterning preparation process, the light shielding layer 50 and the third metal layer M3 are arranged on the same layer, so that part of display light emitted by the light emitting element 40 is prevented from being reflected by the film layer of the display panel and then respectively reaching the active layer 311 of the thin film transistor 31 by different light quantities, the light effect generated by the thin film transistor 31 is avoided, the thin film transistors 31 are ensured to have the same driving characteristic, and the light emitting uniformity of the light emitting element is ensured.

As a possible embodiment, optionally, with continued reference to fig. 4, 5, 6-8, 10-11, the base substrate 20 is a flexible substrate; the base substrate 20 includes a support layer 21, a first organic layer 22, a buffer layer 23, and a second organic layer 24, which are sequentially stacked.

Specifically, the display panel 200 is a flexible display panel, the substrate 20 is a flexible substrate, the supporting layer 21 can be made of flexible materials such as ultra-thin glass, metal foil or polymer plastic materials, and the like, which can play a supporting role and can be bent, and because the light shielding layer 50 shields light, the charge polarization of the first organic layer 22 and the second organic layer 24 can be avoided, so that the stable performance of the organic layers is ensured; the first organic layer 22, the buffer layer 23 and the second organic layer 24 are sequentially deposited on the support layer 21, the first organic layer 22, the buffer layer 23 and the second organic layer 24 can cover the whole upper surface of the substrate base plate 20, when the display panel 200 is bent, the buffer layer 23 can play a role in buffer protection for the first organic layer 22 and the support layer 21, the extrusion stress of the second organic layer 24 is released, the first organic layer 22 and the support layer 21 are prevented from being broken, normal display of the display panel is guaranteed, and the yield of the display panel is improved.

Alternatively, the material of the buffer layer 23 may be silicon oxide or silicon nitride. Alternatively, the support layer 21 includes polyethylene terephthalate, and the first and second organic layers 22 and 24 include polyimide. The support layer 21 may further include at least one of polyimide, polyethylene naphthalate, polycarbonate, polyarylate, and polyethersulfone.

Fig. 12 is a schematic structural diagram of another display panel according to an embodiment of the present invention. In addition to fig. 3 and 12, in the above embodiment, optionally, the display area AA further includes a conventional display area A3, and the transparent display area a0 is multiplexed as the light-sensing element arrangement area. The conventional display area A3 is used for normally displaying pictures, the transparent display area a0 is reused as a light-sensing element setting area, devices such as an image sensor and a fingerprint sensor can be set, and external light enters the inside of the display panel 200 through the light-transmitting area a2, so as to realize light reception of the devices such as the image sensor and the fingerprint sensor.

As a possible implementation manner, the display areas are all transparent display areas. The display areas are transparent display areas, so that normal display of display pictures can be realized, external light can be transmitted, and application requirements of some special display and light-transmitting display panels are met.

Based on the same inventive concept, the embodiment of the invention also provides a display device. Fig. 13 is a schematic structural diagram of a display device according to an embodiment of the present invention, and as shown in fig. 13, the display device includes any one of the display panels provided in the foregoing embodiments. Illustratively, as shown in fig. 13, the display device 300 includes a display panel 200. Therefore, the display device also has the advantages of the display panel in the above embodiments, and the same points can be understood by referring to the above explanation of the display panel, which is not repeated herein.

The display device 300 provided in the embodiment of the present invention may be a mobile phone as shown in fig. 13, and may also be any electronic product with a display function, including but not limited to the following categories: the touch screen display system comprises a television, a notebook computer, a desktop display, a tablet computer, a digital camera, an intelligent bracelet, intelligent glasses, a vehicle-mounted display, industrial control equipment, a medical display screen, a touch interaction terminal and the like, and the embodiment of the invention is not particularly limited in this respect.

It is to be noted that the foregoing description is only exemplary of the invention and that the principles of the technology may be employed. It will be understood by those skilled in the art that the present invention is not limited to the particular embodiments described herein, but is capable of various obvious changes, rearrangements and substitutions as will now become apparent to those skilled in the art without departing from the scope of the invention. Therefore, although the present invention has been described in greater detail by the above embodiments, the present invention is not limited to the above embodiments, and may include other equivalent embodiments without departing from the spirit of the present invention, and the scope of the present invention is determined by the scope of the appended claims.

Claims (13)

1. A display panel comprising a display region, at least a partial region of the display region being a transparent display region, the transparent display region including a plurality of opaque regions and a transparent region, the display panel comprising:

a substrate base plate;

a pixel circuit layer located at one side of the substrate, the pixel circuit layer including a plurality of thin film transistors;

a plurality of light emitting elements located on one side of the pixel circuit layer away from the substrate;

in the transparent display area, the thin film transistor and the light-emitting element are both positioned in the non-light-transmitting area;

and the shading layer is positioned on one side of the thin film transistor, which is far away from the substrate base plate, and covers the thin film transistor along the direction vertical to the substrate base plate.

2. The display panel according to claim 1, wherein the light shielding layer comprises a metal material, and the light shielding layer is electrically connected to the fixed voltage terminal.

3. The display panel according to claim 2, wherein the pixel circuit layer includes a first power voltage trace and a second power voltage trace, a voltage of the first power voltage trace is greater than a voltage of the second power voltage trace, and the fixed voltage terminal includes the first power voltage trace and the second power voltage trace.

4. The display panel according to claim 1, wherein the display panel comprises a first electrode layer, a light-emitting layer, and a second electrode layer which are stacked in this order in a direction away from the substrate base plate;

the first electrode layer includes a plurality of first electrodes corresponding to the light emitting elements, and the second electrode layer includes a plurality of openings corresponding to the light transmitting regions.

5. The display panel according to claim 4, wherein the non-light-transmitting region includes at least one pixel unit, the pixel unit includes a first light-emitting element, a second light-emitting element, a third light-emitting element, a first pixel circuit, a second pixel circuit, and a third pixel circuit, the first light-emitting element is connected to the first pixel circuit, the second light-emitting element is connected to the second pixel circuit, and the third light-emitting element is connected to the third pixel circuit;

the first light emitting element, the second light emitting element, and the third light emitting element are all free from overlapping with the third pixel circuit in a direction perpendicular to the substrate base plate.

6. The display panel according to claim 5, wherein the first electrode layer further comprises a plurality of auxiliary electrodes, the auxiliary electrodes being electrically connected to the second electrode layer;

the auxiliary electrode at least partially overlaps the third pixel circuit in a direction perpendicular to the substrate base plate.

7. The display panel according to claim 4, wherein the light shielding layer is in the same layer as the first electrode layer.

8. The display panel according to claim 1, wherein the display panel comprises a first metal layer, a second metal layer, and a third metal layer;

the first metal layer and the second metal layer are positioned on the pixel circuit layer, the first metal layer comprises a plurality of scanning lines extending along a first direction, the second metal layer comprises a plurality of data lines extending along a second direction, and the first direction and the second direction are crossed;

the shading layer and the third metal layer are arranged on the same layer.

9. The display panel according to claim 1, wherein the base substrate is a flexible substrate;

the substrate base plate comprises a supporting layer, a first organic layer, a buffer layer and a second organic layer which are sequentially stacked.

10. The display panel according to claim 9, wherein the support layer comprises polyethylene terephthalate, and wherein the first organic layer and the second organic layer comprise polyimide.

11. The display panel according to claim 1, wherein the display region further comprises a normal display region, and the transparent display region is multiplexed into the light-sensing element arrangement region.

12. The display panel according to claim 1, wherein the display regions are transparent display regions.

13. A display device comprising the display panel according to any one of claims 1 to 12.

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