CN114910849A

CN114910849A - Special-shaped curved surface MRI image enhancement super-structure surface device

Info

Publication number: CN114910849A
Application number: CN202110183942.8A
Authority: CN
Inventors: 赵乾; 池中海; 孟永钢; 郑卓肇
Original assignee: Tsinghua University; Beijing Tsinghua Changgeng Hospital
Current assignee: Tsinghua University; Beijing Tsinghua Changgeng Hospital
Priority date: 2021-02-10
Filing date: 2021-02-10
Publication date: 2022-08-16
Anticipated expiration: 2041-02-10
Also published as: CN114910849B

Abstract

The application relates to a curved surface magnetic field enhancement device. The magnetic field enhancement assembly comprises a flexible support body, a plurality of magnetic field enhancement assemblies, a first conductive sheet and a second conductive sheet. The flexible support body can be bent into a curved surface. The magnetic field enhancement assemblies are arranged on the flexible supporting body at intervals in parallel. Each magnetic field enhancement assembly includes a first electrical connection end and a second electrical connection end. And a structure capacitor and an inductance structure which are connected in series are connected between the first electric connection end and the second electric connection end. The first conducting strips are respectively connected with the first electric connecting ends of the magnetic field enhancement assemblies. The second conducting strips are respectively connected with the second electric connecting ends of the magnetic field enhancement assemblies. The resonant frequency of the curved surface magnetic field enhancing device is equal to the target frequency, the curved surface magnetic field enhancing device resonates with the detection part, the magnetic field intensity of the detection signal is increased, and the quality of the signal acquired by the radio frequency coil is improved.

Description

Special-shaped curved surface MRI image enhancement super-structure surface device

Technical Field

The application relates to the technical field of detection, in particular to a curved surface magnetic field enhancement device.

Background

The radio frequency coil of conventional MRI acquires the human body feedback signal by means of coil resonance. The strength of the human body feedback signal influences the quality of the signal acquired by the radio frequency coil. Therefore, the signal-to-noise ratio and the resolution of the MRI image can be influenced by the strength of the human body feedback signal. The signal-to-noise ratio and resolution of the MRI images affect the late stage lesion diagnosis.

The strength of the human body feedback signal is related to the magnetic field strength. How to increase the magnetic field intensity of human body feedback signals and improve the quality of detection signals acquired by a radio frequency coil.

Disclosure of Invention

In view of this, it is necessary to provide a curved surface magnetic field enhancement device for the problem of how to increase the magnetic field strength of the human body feedback signal.

A magnetic field enhancement assembly comprises a flexible support body, a plurality of magnetic field enhancement assemblies, a first conducting strip and a second conducting strip. The flexible supporting body can be bent into a curved surface. The magnetic field enhancement assemblies are arranged on the flexible support body at intervals in parallel. Each of the magnetic field enhancement assemblies includes a first electrical connection end and a second electrical connection end. And a structure capacitor and an inductance structure which are connected in series are connected between the first electric connection end and the second electric connection end. The first conducting strips are respectively connected with the first electric connecting ends of the magnetic field enhancement assemblies. The second conducting strips are respectively connected with the second electric connection ends of the magnetic field enhancement assemblies. The resonant frequency of the curved magnetic field enhancement device is equal to the target frequency.

The resonant frequency of the curved surface magnetic field enhancement device provided by the embodiment of the application is equal to the target frequency. The curved surface magnetic field enhancing device resonates with the detection part, the magnetic field intensity of detection signals is increased, and the quality of signals collected by the radio frequency coil is improved. Under the action of external force, the flexible support body can be bent. The flexible support body can be bent into a curved surface and can be a plane. The radian of the detection curved surface formed by the flexible supporting body is adjustable. When the thickness of the abdomen of a patient is different, the plurality of magnetic field enhancement components can be attached to the detection part of the human body by changing the bending radian of the flexible supporting body, so that the gap between the detection part and the curved surface magnetic field enhancement device is reduced, the intensity of a detection signal is increased, and the signal quality is improved.

Drawings

In order to more clearly illustrate the technical solutions in the embodiments or the conventional technologies of the present application, the drawings used in the descriptions of the embodiments or the conventional technologies will be briefly introduced below, it is obvious that the drawings in the following descriptions are only some embodiments of the present application, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.

FIG. 1 is a schematic diagram of a magnetic field enhancement device provided in one embodiment of the present application;

FIG. 2 is an exploded view of the structure of a magnetic field enhancement device provided in one embodiment of the present application;

FIG. 3 is a magnetic field profile of a magnetic field enhancement device provided in one embodiment of the present application;

FIG. 4 is a side cross-sectional view of the magnetic field enhancement assembly provided in one embodiment of the present application;

FIG. 5 is a top view of the magnetic field enhancement assembly of FIG. 4;

FIG. 6 is a top view of the magnetic field enhancement assembly provided in another embodiment of the present application;

FIG. 7 is a top view of the magnetic field enhancement assembly provided in another embodiment of the present application;

FIG. 8 is an electrical connection diagram of the magnetic field enhancement assembly provided in one embodiment of the present application;

FIG. 9 is an electrical connection diagram of the magnetic field enhancement assembly provided in one embodiment of the present application;

FIG. 10 is an electrical connection diagram of the magnetic field enhancement assembly provided in one embodiment of the present application;

FIG. 11 is an electrical connection diagram of the magnetic field enhancement assembly provided in one embodiment of the present application;

FIG. 12 is an electrical connection diagram of the magnetic field enhancement assembly provided in one embodiment of the present application;

FIG. 13 is an electrical connection diagram of the magnetic field enhancement assembly provided in one embodiment of the present application;

FIG. 14 is an electrical connection diagram of the magnetic field enhancement assembly provided in one embodiment of the present application;

FIG. 15 is an electrical connection diagram of the magnetic field enhancement assembly provided in one embodiment of the present application;

FIG. 16 is an electrical connection diagram of the magnetic field enhancement assembly provided in one embodiment of the present application;

FIG. 17 is a top view of the magnetic field enhancement assembly of FIG. 16;

fig. 18 is an orthographic view of the first electrode layer and the second electrode layer on the first dielectric layer according to an embodiment of the present disclosure;

fig. 19 is a schematic orthographic projection shape of the first electrode layer and the second electrode layer on the first dielectric layer according to another embodiment of the present application;

FIG. 20 is an electrical connection diagram of the magnetic field enhancement assembly provided in one embodiment of the present application;

FIG. 21 is an electrical connection diagram of the magnetic field enhancement assembly provided in one embodiment of the present application;

FIG. 22 is an electrical connection diagram of the magnetic field enhancement assembly provided in one embodiment of the present application.

Reference numbers:

a curved magnetic field enhancing device 20; a first curved surface element 940; a magnetic field enhancement assembly 10; a first electrical connection terminal 911; a second electrical connection terminal 912; a flexible support 500; a fixed structure 930; a first fixing member 931; a second fixing member 931; a first conductive sheet 510; a second conductive sheet 520;

a first end 103; a second end 104; a first surface 101; a second surface 102; a first electrode layer 110; a first sub-electrode layer 111; a first connection layer 190; a second sub-electrode layer 112; a second electrode layer 120; a third electrode layer 130; a second structure capacitor 302; a third structure capacitance 303; a fourth electrode layer 140;

an output matching circuit 640; a matching capacitor 641; a tuning capacitor 642; an output interface 643; a first tuning circuit 60; a switch control circuit 430; a first diode 431; a second diode 432; an external capacitor 440; the third external capacitor 443; a fifth external capacitor 445; a second tuning circuit 70; a first depletion type MOS transistor 231; a second depletion type MOS transistor 232; a third capacitor 223; a first inductor 241; a first switch circuit 631; a third diode 213; a fourth diode 214;

a via 103; a first structural capacitance 150; a first gap 411; a second gap 412; a third opening 413; a fourth gap 414.

Detailed Description

In order to make the aforementioned objects, features and advantages of the present application more comprehensible, embodiments accompanying the present application are described in detail below with reference to the accompanying drawings. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present application. This application is capable of embodiments in many different forms than those described herein and those skilled in the art will be able to make similar modifications without departing from the spirit of the application and it is therefore not intended to be limited to the embodiments disclosed below.

The numbering of the components as such, e.g., "first", "second", etc., is used herein for the purpose of describing the objects only, and does not have any sequential or technical meaning. The term "connected" and "coupled" as used herein includes both direct and indirect connections (couplings), unless otherwise specified. In the description of the present application, it is to be understood that the terms "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", and the like, indicate orientations or positional relationships based on those shown in the drawings, and are used only for convenience in describing the present application and for simplicity in description, and do not indicate or imply that the devices or elements referred to must have a particular orientation, be constructed in a particular orientation, and be operated, and thus, are not to be considered as limiting the present application.

In this application, unless expressly stated or limited otherwise, the first feature "on" or "under" the second feature may be directly contacting the first and second features or indirectly contacting the first and second features through intervening media. Also, a first feature "on," "over," and "above" a second feature may be directly or diagonally above the second feature, or may simply indicate that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature may be directly under or obliquely under the first feature, or may simply mean that the first feature is at a lesser elevation than the second feature.

Referring to fig. 1 and fig. 2, an embodiment of the present application provides a curved magnetic field enhancement device 20, which includes a flexible support 500, a plurality of magnetic field enhancement assemblies 10, a first conductive sheet 510, and a second conductive sheet 520. The flexible supporting body 500 can be bent into a curved surface. The plurality of magnetic field enhancement assemblies 10 are arranged in parallel at intervals on the flexible support 500. Each of the magnetic field enhancing assemblies 10 includes a first electrical connection terminal 911 and a second electrical connection terminal 912. A series connection of a capacitor and inductor arrangement is connected between the first electrical connection 911 and the second electrical connection 912. The first conductive sheet 510 is respectively connected to the first electrical connection terminals 911 of the magnetic field enhancement assemblies 10. The second conductive sheets 520 are respectively connected to the second electrical connection terminals 912 of the magnetic field enhancement assemblies 10. The resonant frequency of the curved magnetic field enhancing device 20 is equal to the target frequency.

Under the action of external force, the flexible support 500 may be flexed. The flexible supporting body 500 may be curved, and may be a plane. The radian of the detection curved surface formed by the flexible supporting body 500 can be adjusted. When the abdomen of the patient has different thickness, the plurality of magnetic field enhancement assemblies 10 can be attached to the detection part of the human body by changing the bending radian of the flexible supporting body 500, the gap between the detection part and the curved magnetic field enhancement device 20 is reduced, the intensity of the detection signal is increased, and the signal quality is improved.

Referring to fig. 3, in the application process of the curved magnetic field enhancing device 20 provided in the embodiment of the present application, the curved magnetic field enhancing device 20 is disposed at the detection portion. The resonant frequency of the curved magnetic field enhancing device 20 is equal to the target frequency. The curved surface magnetic field enhancement device 20 resonates with the detection part, the magnetic field intensity of the detection signal is increased, and the quality of the signal acquired by the radio frequency coil is improved. In addition, both the curved magnetic field enhancement devices 20 can enhance the feedback signal magnetic field of the detection portion. Since the detection part is located between the two curved magnetic field enhancement devices 20, the plurality of magnetic field enhancement assemblies 10 in the curved magnetic field enhancement devices 20 are arranged at intervals in the same curved surface. The curved surface magnetic field enhancement device 20 is a special-shaped curved surface MRI image enhancement super-structure surface device. The special-shaped curved MRI image enhancement super-structure surface device is of a curved surface structure and can be attached to the abdomen of a human body. The special-shaped curved surface MRI image enhancement super structure surface device can cover the abdomen of a human body, so that the gap between the special-shaped curved surface MRI image enhancement super structure surface device and the abdomen is reduced, and the signal quality of the human body abdomen is improved. Fig. 3 is a magnetic field distribution diagram of the curved magnetic field enhancing device 20. The magnetic field distribution of the region surrounded by the curved magnetic field enhancement device 20 is uniform.

In one embodiment, the plurality of magnetic field enhancement assemblies 10 in the curved magnetic field enhancement device 20 have equal capacitance values and equal inductance values.

In one embodiment, the inductance value of the inductance structure in the magnetic field enhancing component 10 at the edge of the curved magnetic field enhancing device 20 is larger than the inductance value of the inductance structure in the magnetic field enhancing component 10 in the middle of the curved magnetic field enhancing device 20. The capacitance value of the capacitor structure in the magnetic field enhancement assembly 10 at the edge of the curved magnetic field enhancement device 20 is smaller than the capacitance value of the capacitor structure in the magnetic field enhancement assembly 10 at the middle of the curved magnetic field enhancement device 20.

When the curved magnetic field enhancement device 20 operates at resonance, the magnetic field is distributed mainly around the inductive structure of the magnetic field enhancement assembly 10. In the middle of the curved magnetic field enhancement device 20, the magnetic field enhancement assemblies 10 are arranged on both sides of each magnetic field enhancement assembly 10. The magnetic fields in each magnetic field enhancement assembly 10 and two adjacent magnetic field enhancement assemblies 10 are mutually superposed, and the magnetic field enhancement degree is larger. Only one side of the magnetic field enhancing assembly 10 at the edge of the curved magnetic field enhancing device 20 has the magnetic field enhancing assembly 10. The magnetic field enhancement component 10 at the edge of the curved magnetic field enhancement device 20 has a lesser degree of magnetic field enhancement. By reducing the capacitance value of the capacitive structure in the magnetic field enhancing component 10 at the edges of the curved magnetic field enhancing means 20, the voltage division in the capacitive structure of the magnetic field enhancing component 10 can be reduced. When the total resonant frequency is not changed, the divided voltage of the inductor is increased, and the magnetic field strength near the capacitor structure of the magnetic field enhancement assembly 10 is enhanced, so that the uniformity of the magnetic field distribution of the feedback signal is improved, and the stability of the detection signal is improved.

Referring to fig. 4 and 5, in one embodiment, the magnetic field enhancement assembly 10 includes a first dielectric layer 100, a first electrode layer 110, a second electrode layer 120, and a third electrode layer 130.

The first dielectric layer 100 has opposing first and second ends 103, 104 and includes opposing first and

second surfaces

101, 102. The first electrode layer 110 is disposed on the first surface 101 and extends along the first end 103 to the second end 104. The first electrode layer 110 includes a first sub-electrode layer 111, a second sub-electrode layer 112, and a first connection layer 190. The first sub-electrode layer 111 and the second sub-electrode layer 112 have the same width and are disposed at opposite intervals. One end of the first connection layer 190 is connected to the first sub-electrode layer 111, and the other end of the first connection layer 190 is connected to the second sub-electrode layer 112. The width of the first connection layer 190 is smaller than the width of the first sub-electrode layer 111 or the second sub-electrode layer 112.

The second electrode layer 120 and the third electrode layer 130 are disposed on the second surface 102 at an interval. The orthographic projection of the second electrode layer 120 on the first dielectric layer 100 partially overlaps the orthographic projection of the first sub-electrode layer 111 on the first dielectric layer 100. The second electrode layer 120, the first dielectric layer 100, and the first sub-electrode layer 111 constitute a second structured capacitor 302. The orthographic projection of the third electrode layer 130 on the first dielectric layer 100 is partially overlapped with the orthographic projection of the second sub-electrode layer 112 on the first dielectric layer 100. The third electrode layer 130, the first dielectric layer 100, and the second sub-electrode layer 112 constitute a third structure capacitor 303.

The first dielectric layer 100 may function to support the first electrode layer 110, the second electrode layer 120, and the third electrode layer 130. The first dielectric layer 100 may be an insulating material. The first dielectric layer 100 may have a rectangular plate-shaped structure. The first dielectric layer 100 may be an insulating material. In one embodiment, the material of the first dielectric layer 100 may be a glass fiber epoxy board. The materials of the first electrode layer 110, the second electrode layer 120, and the third electrode layer 130 may be composed of a conductive non-magnetic material. In one embodiment, the material of the first electrode layer 110, the second electrode layer 120, and the third electrode layer 130 may be a metal material such as gold, silver, copper, or the like.

The first electrical connection terminal 911 is the second structure capacitor 302. The second electrical connection terminal 912 is the third structural capacitor 303. The first conductive sheets 510 are respectively connected to the second electrode layers 120 of the plurality of magnetic field enhancement assemblies 10. The second conductive sheets 520 are respectively connected to the third electrode layers 130 of the magnetic field enhancement assemblies 10.

The second structure capacitor 302 and the third structure capacitor 303 in the magnetic field enhancement assembly 10 are connected through the first connection layer 190 to form a resonant circuit. The magnetic field enhancement assembly 10 covers the detection part and enhances the magnetic field of the feedback signal of the detection part in a resonance mode. The width of the first connection layer 190 in the magnetic field enhancement assembly 10 is smaller than the width of the first sub-electrode layer 111. The area of the detection part covered by the first electrode layer 110 is reduced, the shielding effect of the first electrode layer 110 is weakened, and the transmission capability of the feedback signal is enhanced. The radio frequency coil is easier to receive the feedback signal, so that the quality of the received signal is improved, and the quality of an image formed after the signal is processed is improved.

In addition, the magnetic field enhancement assemblies 10 are arranged in a row and array manner, stray capacitance formed among the first connecting layer 190, air and the detection cylinder in the magnetic field enhancement assemblies 10 is reduced, coupling effect is reduced, and signal quality is improved.

In one embodiment, the electrical loss of the first connection layer 190 is less than 1/2 of the overall electrical loss of the magnetic field enhancement assembly 10. The first connection layer 190 has a small electrical loss, and the magnetic field enhancement assembly 10 generates a small amount of heat. The energy of the loop in which the magnetic field enhancement assembly 10 is located is mainly used for generating a magnetic field, and the enhancement effect of the magnetic field in the receiving stage is better.

In one embodiment, the width of the first connection layer 190 is 1/5 to 1/2 of the width of the first sub-electrode layer 111. When the width of the first connection layer 190 is 1/5 to 1/2 of the width of the first sub-electrode layer 111, it can be ensured that the ratio of the electric loss of the first connection layer 190 in the magnetic field enhancement assembly 10 is less than 1/2 of the overall electric loss. The first connection layer 190 has a small electrical loss, and the magnetic field enhancement assembly 10 generates a small amount of heat. The energy of the loop in which the magnetic field enhancement assembly 10 is located is mainly used for generating a magnetic field, and the enhancement effect of the magnetic field in the receiving stage is better.

In one embodiment, the width of the first sub-electrode layer 111 and the second sub-electrode layer 112 is 1 mm to 30 mm. The first connection layer 190 is 1 mm to 15 mm. In one embodiment, the width of the first sub-electrode layer 111 and the second sub-electrode layer 112 is 15 mm, and the width of the first connection layer 190 is 4 mm.

Referring to fig. 6, in one embodiment, an angle between the extending direction of the first connection layer 190 and the first direction b is an acute angle or an obtuse angle. The first direction b is directed from the first end 103 to the second end 104. The curved magnetic field enhancement device 20 comprises a cylindrical support structure 50, a first conductive sheet 510, a second conductive sheet 520 and a plurality of the magnetic field enhancement assemblies 10. When the cylindrical support structure 50 is a cylindrical structure, a plurality of the magnetic field enhancement assemblies 10 are arranged in parallel at intervals on the cylindrical support structure 50. A plurality of the magnetic field enhancing assemblies 10 are connected in parallel. In the curved magnetic field enhancement device 20, the first connection layers 190 of two opposite magnetic field enhancement assemblies 10 are arranged in a staggered manner, and the parallel overlapping portions are reduced. The stray capacitance formed by the first connection layer 190 and the air in the two opposite magnetic field enhancement assemblies 10 is reduced, the coupling effect is reduced, and the signal quality is improved.

Referring to fig. 7, in one embodiment, an arc-shaped chamfer is disposed at an intersection of a sidewall of the first connection layer 190 and a sidewall of the first sub-electrode layer 111 or the second sub-electrode 112. An electric current flows through the first sub-electrode layer 111, the first connection layer 190, and the second sub-electrode layer 112. The width of the first connection layer 190 is smaller than the width of the first sub-electrode layer 111. The current is collected at the connection between the first sub-electrode layer 111 and the first connection layer 190, and the current density increases. An arc-shaped chamfer is arranged at the intersection of the side wall of the first connecting layer 190 and the side wall of the first sub-electrode layer 111, so that the first connecting layer 190 is connected with the first sub-electrode layer 111 through a horn-shaped structure, the sudden change of current density is reduced, and the current density at the intersection of the side wall of the first connecting layer 190 and the side wall of the first sub-electrode layer 111 is reduced. The current density at the joint of the first connection layer 190 and the first sub-electrode layer 111 is reduced, the heat generation is reduced, and the service life of the magnetic field enhancement assembly 10 is prolonged.

The current is collected at the connection between the second sub-electrode layer 112 and the first connection layer 190, and the current density is increased. An arc-shaped chamfer is arranged at the intersection of the side wall of the first connection layer 190 and the side wall of the second sub-electrode layer 112, so that a horn-shaped structure is formed at the joint of the first connection layer 190 and the second sub-electrode layer 112. The junction of the first connection layer 190 and the second sub-electrode layer 112 forms a horn-shaped structure, which can reduce the abrupt change of current density, and further reduce the current density at the intersection of the sidewall of the first connection layer 190 and the sidewall of the second sub-electrode layer 112. The current density at the connection point of the second sub-electrode layer 112 and the first connection layer 190 is reduced, so that the heat generation amount is reduced, and the service life of the magnetic field enhancement assembly 10 can be further prolonged.

Referring also to fig. 8, in one embodiment, the curved magnetic field enhancing device 20 further includes an output matching circuit 640. The output matching circuit 640 is connected to the first electrical connection 911. The output matching circuit 640 is further used for connecting with a signal acquisition device. The output matching circuit 640 is used for adjusting the impedance value and the resonant frequency of the signal acquisition device.

The curved magnetic field enhancement device 20 can adjust the impedance value at two ends of the signal acquisition device through the output matching circuit 640, so that the output impedance of the output matching circuit 640 is matched with the output impedance of a cable, and reflection is reduced. The magnetic field enhancement assembly 10 can also adjust the resonant frequency through the output matching circuit 640, so that the resonant frequency of the output matching circuit 640 and the signal acquisition device on the output side is equal to the target frequency, and the strength of the output detection signal is improved. In the radio frequency receiving stage, the curved magnetic field enhancement device 20 resonates, and the magnetic field of the curved magnetic field enhancement device 20 has the same characteristics as the magnetic field generated by the human body feedback signal. The magnetic field enhancement assembly 10 can match the output impedance and increase the signal strength through the output matching circuit 640, and can extract the detection signal. Furthermore, the curved magnetic field enhancement device 20 can be closer to the object to be detected, the detection sensitivity of the curved magnetic field enhancement device 20 is higher, and the detected image is clearer.

In one embodiment, the output matching circuit 640 is respectively connected to two electrodes of the second structure 302.

In one embodiment, the output matching circuit 640 includes a matching capacitor 641 and a tuning capacitor 642. One end of the matching capacitor 641 is connected to the positive electrode of the first electrical connection terminal 911. The tuning capacitor 642 is connected between the other end of the matching capacitor 641 and the negative electrode of the first electrical connection terminal 911. That is, one end of the matching capacitor 641 is connected to the first sub-electrode layer 111. The tuning capacitor 642 is connected between the other end of the matching capacitor 641 and the second electrode layer 120. And two ends of the tuning capacitor 642 are used for being connected with the signal acquisition device.

The tuning capacitor 642 is connected in parallel with the signal acquisition device, and the tuning capacitor 642 is mainly used for adjusting the resonant frequency of the signal output end circuit, so that the resonant frequency of the output side where the signal acquisition device is located is equal to a target resonant frequency. In the radio frequency receiving stage, the output matching circuit 640 at the output side resonates with the signal acquisition device, so that the strength of the detection signal is enhanced, and the detection signal is convenient to output.

The matching capacitor 641 is connected in series with the tuning capacitor 642 and in series with the signal acquisition device. The matching capacitor 641 can adjust the impedance of the output matching circuit 640 on the output side by adjusting its own capacitive impedance, so that the output impedance of the system is matched with the output impedance of the cable to reduce reflection, and the output impedance of a typical coaxial line is 50 ohms or 75 ohms. Such that the output impedance of the output matching circuit 640 matches the output impedance of the cable to reduce reflections. Typical output impedances of coaxial lines are 50 ohms or 75 ohms. The matching capacitor 641 and the tuning capacitor 642 may be adjustable capacitors.

Referring to fig. 9, in one embodiment, the first switching element 651 includes a first depletion type MOS transistor 652 and a second depletion type MOS transistor 653 connected in series in an opposite direction. The first depletion type MOS transistor 652 and the second depletion type MOS transistor 653 are connected in series between the output matching circuit 640 and the first sub-electrode layer 111. The gate and the drain of the first depletion type MOS transistor 652 are connected to one end of the matching capacitor 641 away from the tuning capacitor 642. The source of the first depletion type MOS transistor 652 is connected to the source of the second depletion type MOS transistor 653. The gate and the drain of the second depletion type MOS transistor 653 are connected to the first sub-electrode layer 111.

The first depletion type MOS 652 and the second depletion type MOS 653 are configured to be alternately turned on during a radio frequency receiving phase. The first depletion MOS transistor 652 and the second depletion MOS transistor 653 are also used to turn off during the RF emission phase.

The curved magnetic field enhancing device 20 is applied to an MRI system to enhance the magnetic field strength of the human body feedback signal during the radio frequency receiving phase. The magnetic field during the radio frequency transmit phase of the MRI system is primarily the radio frequency magnetic field emitted by the radio frequency device. The magnetic field in the receiving stage is mainly the magnetic field generated by the human body feedback signal. The magnetic field energy in the transmit phase is more than 1000 times the magnetic field energy in the receive phase. The induced voltage of the magnetic field enhancing component 10 during the transmit phase is between a few tens of volts and a few hundreds of volts. The induced voltage of the magnetic field enhancing assembly 10 during the receive phase is less than 1 volt.

In a radio frequency emission phase, a voltage across the first depletion type MOS 652 and the second depletion type MOS 653 is greater than a pinch-off voltage, the first depletion type MOS 652 and the second depletion type MOS 653 are not conductive, and no current flows in the output matching circuit 640. The first depletion type MOS transistor 652 and the second depletion type MOS transistor 653 are connected in series in reverse for the purpose of responding to an ac voltage.

In a radio frequency receiving stage, the source and drain of the first depletion type MOS 652 or the second depletion type MOS 653 are turned on. The matching capacitor 641 and the first sub-electrode layer 111 are turned on. The output matching circuit 640 resonates, and a detection signal may be output to the signal acquisition device.

In one embodiment, the output matching circuit 640 is connected to the magnetic field enhancement assembly 10 in the middle of the curved magnetic field enhancement device 20. The magnetic field enhancement assemblies 10 on the two sides of the magnetic field enhancement assembly 10 in the middle are symmetrically distributed, the magnetic field of the magnetic field enhancement assembly 10 in the middle is uniformly influenced by the two sides, and therefore the stability of detection signals is good, and the quality of the signals is good. Therefore, the output matching circuit 640 is disposed in the magnetic field enhancement assembly 10 in the middle, and the output signal quality is better.

Referring also to fig. 10, in one embodiment, the curved magnetic field enhancing device 20 further includes a first tuning circuit 60. The first tuning circuit 60 is connected to the first electrical connection terminal 911. The first tuning circuit 60 is used to make the curved magnetic field enhancing device 20 resonate when in the rf receiving phase. The first tuning circuit 60 is used to detune the curved magnetic field enhancing device 20 during the radio frequency transmission phase.

In one embodiment, the first tuning circuit 60 includes a switch control circuit 430. One end of the switch control circuit 430 is connected to the first sub-electrode layer 111, and the other end of the switch control circuit 430 is connected to the second electrode layer 120. The switch control circuit 430 is configured to be turned on during the rf transmitting phase and turned off during the rf receiving phase.

The switch control circuit 430 is connected in parallel with the second structure capacitor 302. Therefore, in the radio frequency transmission phase, the switch control circuit 430 is turned on, and the first sub-electrode layer 111 and the second electrode layer 120 are electrically connected. In the rf receiving phase, the switch control circuit 430 is turned off, and the first sub-electrode layer 111 and the second electrode layer 120 are disconnected. The turn-on voltage of the switch control circuit 430 may be greater than 1 volt. That is, when the voltage difference between the first sub-electrode layer 111 and the second electrode layer is greater than 1v, the switch control circuit 430 is turned on. When the voltage difference between the first sub-electrode layer 111 and the second electrode layer 120 is less than 1 volt, the switch control circuit 430 is turned off.

During the rf transmitting phase, the switch control circuit 430 is turned on due to the large voltage difference across the structure capacitor. The first sub-electrode layer 111 and the second electrode layer 120 are electrically connected. In this case, the first sub-electrode layer 111 and the second electrode layer 120 cannot constitute the second structured capacitor 302. I.e. the curved magnetic field enhancing device 20 does not have resonant properties. The curved magnetic field enhancing device 20 cannot enhance the rf transmission field.

In the rf receiving phase, the voltage difference between the first sub-electrode layer 111 and the second electrode layer 120 is small, the switch control circuit 430 is turned off, and the first sub-electrode layer 111 and the second electrode layer 120 are disconnected. In this case, the first sub-electrode layer 111 and the second electrode layer 120 form the second structured capacitor 302. A plurality of said magnetic field enhancing assemblies 10 thus form an LC oscillating circuit. The curved magnetic field enhancement device 20 can enhance the rf magnetic field formed by the feedback signal of the detection portion.

Referring to fig. 11, in one embodiment, the first tuning circuit 60 further includes an external capacitor 440. Two ends of the external capacitor 440 are respectively connected to the first sub-electrode layer 111 and the second electrode layer 120. The external capacitor 440 may be an adjustable capacitor connected in parallel with the first sub-electrode layer 111 and the second electrode layer 120. The external capacitor 440 and the third structure capacitor 303 cooperate to adjust the resonance performance of the magnetic field enhancement assembly 10. In the radio frequency receiving stage, the external capacitor 440 is connected in parallel with the third structural capacitor 303, the external capacitor 440 is disposed at the first end 103, and the third structural capacitor 303 is disposed at the second end 104, so that the magnetic field of the magnetic field enhancement assembly 10 in the extending direction can be balanced, the uniformity of the magnetic field is improved, and the quality of the detection signal is improved.

In one embodiment, the switch control circuit 430 includes a first diode 431 and a second diode 432. An anode of the first diode 431 is connected to the first sub-electrode layer 111. A cathode of the first diode 431 is connected to the second electrode layer 120. A cathode of the second diode 432 is connected to the first sub-electrode layer 111, and an anode of the second diode 432 is connected to the second electrode layer 120.

It is understood that the turn-on voltages of the first diode 431 and the second diode 432 may be between 0 volts and 1 volt. In one embodiment, the turn-on voltage of the first diode 431 and the second diode 432 may be 0.8 volts.

During the rf transmission phase, the first diode 431 and the second diode 432 are turned on due to the large voltage difference on the structure capacitance. The first sub-electrode layer 111 and the second electrode layer 120 are electrically connected. In this case, the first sub-electrode layer 111 and the second electrode layer 120 cannot constitute the second structured capacitor 302. I.e. the curved magnetic field enhancing device 20 does not have resonant properties. The curved magnetic field enhancing device 20 cannot enhance the rf transmission field.

In the rf receiving stage, the voltage difference between the first sub-electrode layer 111 and the second electrode layer 120 is small, the first diode 431 and the second diode 432 are not turned on, and the first sub-electrode layer 111 and the second electrode layer 120 are turned off. In this case, the first sub-electrode layer 111 and the second electrode layer 120 form the second structured capacitor 302. A plurality of said magnetic field enhancing assemblies 10 thus form an LC oscillating circuit. The curved magnetic field enhancement device 20 can enhance the rf magnetic field formed by the feedback signal of the detection portion.

Referring to fig. 12, in one embodiment, the first tuning circuit 60 further includes a third external capacitor 443. The external capacitor 440 and the third external capacitor 443 are connected in series between the first sub-electrode layer 111 and the second electrode layer 120, and the switch control circuit 430 is connected in parallel to two ends of the external capacitor 440. The switch control circuit 430 is configured to be turned on during the rf transmitting phase and turned off during the rf receiving phase.

The external capacitor 440 and the third external capacitor 443 may be adjustable capacitors, and in the rf transmitting phase, the switch control circuit 430 is turned on due to a large voltage difference between the first sub-electrode layer 111 and the second electrode layer 120. The third external capacitor 443 is connected between the first sub-electrode layer 111 and the second electrode layer 120, and the tuning degree of the loop in which the magnetic field enhancement assembly 10 is located during the rf transmission phase can be adjusted by adjusting the third external capacitor 443. I.e. the degree of tuning of the curved magnetic field enhancing device 20 during the radio frequency transmission phase, can be adjusted by means of the third external capacitor 443.

In the radio frequency emission stage, the third external capacitor 443 is adjusted to enable the magnetic field of the measured area to be the same as the magnetic field intensity after the curved magnetic field enhancement device 20 is added and before the curved magnetic field enhancement device 20 is added, at the moment, the measured area keeps the original magnetic field intensity, the influence of the curved magnetic field enhancement device 20 on the radio frequency emission stage can be eliminated, the curved magnetic field enhancement device 20 can be suitable for all clinical sequences, and the clinical practicability of the curved magnetic field enhancement device 20 is improved.

Please also refer to fig. 13, in one embodiment. The first tuning circuit 60 further includes a fifth external capacitor 445. The fifth external capacitor 445 and the switch control circuit 430 are connected in series between the first sub-electrode layer 111 and the second sub-electrode layer 112. The fifth external capacitor 445 and the switch control circuit 430 are connected in series to form a circuit, which is connected in parallel with the external capacitor 440.

Therefore, when the switch control circuit 430 is turned on, the fifth external capacitor 445 and the external capacitor 440 are connected in parallel to the first sub-electrode layer 111 and the second sub-electrode layer 112. Compared with two capacitors connected in series, when the total capacitance value of the magnetic field enhancement component 10 is equal, the capacitance value of the fifth external capacitor 445 and the external capacitor 440 connected in parallel is larger, so that the capacitance values of the second structure capacitor 302 and the third structure capacitor 303 can be smaller, and therefore the loss of the magnetic field enhancement component 10 is reduced.

In the radio frequency transmitting stage, the resonant frequency of the loop where the magnetic field enhancing component 10 is located deviates far from the operating frequency of the magnetic resonance system, so that by adjusting the fifth external capacitor 445 and the external capacitor 440, it can be ensured that the magnetic field intensity of the magnetic field enhancing component 10 is the same in the radio frequency transmitting stage of the magnetic resonance system. It will be appreciated that the linear response characteristics of the curved magnetic field enhancing device 20 determine that it has the same resonant behavior during the rf transmit and rf receive stages.

In the radio frequency transmitting phase, the voltage difference between the first sub-electrode layer 111 and the second sub-electrode layer 112 is large, and the switch control circuit 430 is turned on. The external capacitor 440 and the fifth external capacitor 445 are connected in series between the first sub-electrode layer 111 and the second sub-electrode layer 112.

In the rf receiving stage, the voltage difference between the first sub-electrode layer 111 and the second sub-electrode layer 112 is small, and the switch control circuit 430 is turned off. Only the external capacitor 440 is connected in series between the first sub-electrode layer 111 and the second sub-electrode layer 112. By adjusting the external capacitor 440, the resonant frequency of the loop where the magnetic field enhancement assembly 10 is located can be adjusted, so that the resonant frequency is equal to the frequency of the radio frequency coil, thereby greatly enhancing the radio frequency receiving field and improving the image signal to noise ratio.

The circuit formed by the fifth external capacitor 445 and the external capacitor 440 connected in parallel can be connected through the first connection layer 190 and the second connection layer 191.

By adjusting the external capacitor 440 and the fifth external capacitor 445, the loop in which the magnetic field enhancement assembly 10 is located can have a good resonant frequency in the radio frequency receiving stage. Finally, the resonance frequency of the loop in which the magnetic field enhancement assembly 10 is located in the receiving phase reaches the operating frequency of the magnetic resonance system.

Referring to fig. 14, in one embodiment, the magnetic field enhancement assembly 10 includes a first dielectric layer 100, a first electrode layer 110, a second electrode layer 120, a third electrode layer 130, a fourth electrode layer 140, and a second tuning circuit 70. The first dielectric layer 100 has a first end 103 and a second end 104 disposed in spaced opposition. The first dielectric layer 100 includes opposing first and

second surfaces

101 and 102. The first electrode layer 110 and the second electrode layer 120 are disposed on the first surface 101 at an interval. The first electrode layer 110 is disposed near the first end 103. The second electrode layer 120 is disposed proximate the second end 104. The third electrode layer 130 and the fourth electrode layer 140 are disposed on the second surface 102 at an interval. The third electrode layer 130 is disposed near the first end 103. The fourth electrode layer 140 is disposed proximate to the second end 104. An orthographic projection of the first electrode layer 110 on the first dielectric layer 100 partially overlaps an orthographic projection of the third electrode layer 130 on the first dielectric layer 100. The first electrode layer 110, the first dielectric layer 100, and the third electrode layer 130 form a second structured capacitor 302. An orthogonal projection of the second electrode layer 120 on the first dielectric layer 100 partially overlaps an orthogonal projection of the fourth electrode layer 140 on the first dielectric layer 100. The second electrode layer 120, the first dielectric layer 100, and the fourth electrode layer 140 constitute a third structural capacitor 303.

One end of the second tuning circuit 70 is connected to the first electrode layer 110. The other end of the second tuning circuit 70 is connected to the second electrode layer 120. The second tuning circuit 70 is used to make the magnetic field enhancement assembly 10 conductive when in the radio frequency receiving phase, and the second tuning circuit 70 is in the high impedance state during the radio frequency transmitting phase.

The second tuning circuit 70 in the curved magnetic field enhancement device 20 in the embodiment of the present application is used to turn on the magnetic field enhancement assembly 10 when in the radio frequency receiving phase, so as to increase the magnetic field strength of the human body feedback signal. The second tuning circuit 70 is also configured to be in a high impedance state during the radio frequency transmit phase. In the rf receiving phase, the second tuning circuit 70 connects the first electrode layer 110 and the second electrode layer 120 to form an LC oscillating circuit. In the radio frequency transmitting stage, the second tuning circuit 70 disconnects the first electrode layer 110 from the second electrode layer 120, so that an LC oscillating circuit cannot be formed, and the second tuning circuit does not have the function of enhancing the magnetic field, thereby reducing the influence on the radio frequency transmitting magnetic field.

The second structure capacitor 302 is the first electrical connection terminal 911. The third structural capacitor 303 is the second electrical connection terminal 912. The first conductive sheets 510 are respectively connected to the third electrode layers 130 of the magnetic field enhancement assemblies 10. The second conductive sheets 520 are respectively connected to the fourth electrode layers 140 of the magnetic field enhancement assemblies 10.

In one embodiment, the second tuning circuit 70 includes a third depletion type MOS transistor 231 and a fourth depletion type MOS transistor 232. The source of the third depletion type MOS transistor 231 is electrically connected to the second electrode layer 120. The gate and the drain of the third depletion type MOS tube 231 are electrically connected to the gate and the drain of the fourth depletion type MOS tube 232. The source of the fourth depletion type MOS transistor 232 is electrically connected to the first electrode layer 110.

The third depletion type MOS tube 231 is connected in series with the fourth depletion type MOS tube 232. In the radio frequency transmitting stage, the radio frequency coil transmits a radio frequency transmitting signal, and the field intensity of a magnetic field is larger. The loop in which the magnetic field enhancement assembly 10 is located generates a large induced voltage. The voltage between the third depletion type MOS tube 231 and the fourth depletion type MOS tube 232 exceeds the pinch-off voltage of the third depletion type MOS tube 231 and the fourth depletion type MOS tube 232, the source and drain of the third depletion type MOS tube 231 are not conducted, and the source and drain of the fourth depletion type MOS tube 232 are not conducted. Almost no current flows between the second structure capacitor 302 and the third structure capacitor 303, and a magnetic field generated by a loop where the magnetic field enhancement assembly 10 is located is weakened, so that the influence of the magnetic field enhancement assembly 10 on a magnetic field in a radio frequency emission stage is reduced, artifacts of a detected image are reduced, and the definition of the detected image is improved.

In the radio frequency receiving stage, the detection part transmits a feedback signal, and the field intensity of the magnetic field is smaller. The induced voltage generated by the magnetic field enhancing assembly 10 is small. The voltage between the third depletion type MOS tube 231 and the fourth depletion type MOS tube 232 is smaller than the pinch-off voltage between the third depletion type MOS tube 231 and the fourth depletion type MOS tube 232, the source and drain of the third depletion type MOS tube 231 are conducted, and the source and drain of the fourth depletion type MOS tube 232 are conducted. The second structure capacitor 302 and the third structure capacitor 303 are connected to form an LC circuit, so that the magnetic field can be enhanced.

Referring also to fig. 15, in one embodiment, the second tuning circuit 70 includes a third capacitor 223, a first inductor 241, and a first switch circuit 631. One end of the third capacitor 223 is connected to the first electrode layer 110. The other end of the third capacitor 223 is connected to the third electrode layer 130. One end of the first inductor 241 is connected to the third electrode layer 130. The first switch circuit 631 is connected between the other end of the first inductor 241 and the first electrode layer 110. The first switch circuit 631 is configured to open during the radio frequency receiving phase. The first switch circuit 631 is further configured to be turned on during the rf transmitting phase, so that the seventh control circuit 630 is in a high impedance state.

The first switch circuit 631 in the magnetic field enhancement assembly 10 is configured to be turned off during the radio frequency reception phase. The second structure capacitor 302 and the third structure capacitor 303 are connected through the third capacitor 223. The first switch circuit 631 and the first inductor 241 do not participate in circuit conduction. The first switch circuit 631 is further configured to be turned on during the radio frequency transmission phase, and the third capacitor 223 is connected in parallel with the first inductor 241, so that the second tuning circuit 70 is in a high impedance state. The second structure capacitor 302 and the third structure capacitor 303 are disconnected. In a radio frequency signal transmitting stage, almost no current flows between the second structure capacitor 302 and the third structure capacitor 303, and a magnetic field generated by the magnetic field enhancement assembly 10 is weakened, so that the influence of the magnetic field enhancement assembly 10 on a magnetic field in the radio frequency signal transmitting stage is reduced, thereby reducing artifacts of a detected image and improving the definition of the detected image.

The first switch circuit 631 may be controlled by a control circuit. In one embodiment, the first switch circuit 631 includes a switching element and a control terminal. One end of the switching element is connected to one end of the first inductor 241 far away from the third electrode layer 130. The other end of the switching element is connected to the first electrode layer 110. The control end is connected with an external control device. The control terminal is used for receiving closing and opening commands. And in the radio frequency transmission phase, the control device outputs a closing command to the control end. When the control terminal receives a close command, the first inductor 241 is conducted with the first electrode layer 110. The first inductor 241 is connected in parallel with the third capacitor 223, generates parallel resonance and is in a high-impedance state; almost no current flows between the first electrode layer 110 and the third electrode layer 130.

In the radio frequency receiving stage, the control device outputs a closing command to the control end. When the control terminal receives a turn-off command, the first inductor 241 is turned off from the first electrode layer 110. The first electrode layer 110, the third capacitor 223, and the third electrode layer 130 are connected in series to form a part of a resonant circuit.

In one embodiment, the first switching circuit 631 includes a third diode 213 and a fourth diode 214. The anode of the third diode 213 is connected to the first electrode layer 110. The cathode of the third diode 213 is connected to the other end of the first inductor 241. The anode of the fourth diode 214 is connected to the other end of the first inductor 241, and the cathode of the fourth diode 214 is connected to the first electrode layer 110.

The third diode 213 and the fourth diode 214 are connected in anti-parallel. In the radio frequency transmitting stage, the radio frequency coil transmits a radio frequency transmitting signal, and the field intensity of a magnetic field is larger. The induced voltage generated by the magnetic field enhancing component 10 is relatively large. The voltages applied across the third diode 213 and the fourth diode 214 alternate between positive and negative. The loaded voltage exceeds the turn-on voltage of the third diode 213 and the fourth diode 214, and the third diode 213 and the fourth diode 214 are turned on. The third capacitor 223 is connected in parallel with the first inductor 241, so that the seventh control circuit 630 is in a high impedance state. In a radio frequency signal transmitting stage, almost no current flows between the second structure capacitor 302 and the third structure capacitor 303, and a magnetic field generated by a loop where the magnetic field enhancement assembly 10 is located is weakened, so that the influence of the loop where the magnetic field enhancement assembly 10 is located on a magnetic field in the radio frequency signal transmitting stage is reduced, thereby reducing artifacts of a detected image and improving the definition of the detected image.

In the radio frequency receiving stage, the detection part transmits a feedback signal, and the field intensity of the magnetic field is smaller. The induced voltage generated by the magnetic field enhancing assembly 10 is small. The applied voltage cannot reach the turn-on voltage of the third diode 213 and the fourth diode 214, and the third diode 213 and the fourth diode 214 are not conductive. The second structure capacitor 302 and the third structure capacitor 303 are connected through the third capacitor 223, and the curved magnetic field enhancement device 20 composed of a plurality of the magnetic field enhancement components 10 is in a resonance state, so as to play a role in enhancing a magnetic field.

In one embodiment, the turn-on voltage of the third diode 213 and the fourth diode 214 is between 0 and 1V. In one embodiment, the turn-on voltages of the third diode 213 and the fourth diode 214 are the same, so that the magnetic field strength is continuously increased during the radio frequency receiving phase of the curved magnetic field enhancing device 20, thereby improving the stability of the feedback signal. In one embodiment, the turn-on voltage of the third diode 213 and the fourth diode 214 is 0.8V.

In one embodiment, the third diode 213 and the fourth diode 214 have the same type, and the voltage drop after the third diode 213 and the fourth diode 214 are turned on is the same, so that the increase amplitude of the magnetic field strength is the same in the radio frequency receiving stage of the curved magnetic field enhancement device 20, and the stability of the feedback signal is further improved.

Referring to fig. 16 and 17, in one embodiment, the magnetic field enhancement assembly 10 includes a first electrode layer 110, a second electrode layer 120, a third electrode layer 120, and a first dielectric layer 100. The first dielectric layer 100 has opposing first 103 and second 104 ends. The first dielectric layer 100 includes a first surface 101 and a second surface 102 disposed opposite to each other. The first electrode layer 110 and the third electrode layer 120 are disposed on the first surface 101 at an interval. The first dielectric layer 100 is formed with a via 103. An electrode material is disposed in the via hole 103. The third electrode layer 130 is electrically connected to the second electrode layer 120 through the electrode material. An orthographic projection of the first electrode layer 110 on the first dielectric layer 100 is partially overlapped with an orthographic projection of the second electrode layer 120 on the first dielectric layer 100, and the first electrode layer 110, the first dielectric layer 100 and the second electrode layer 120 form a first structural capacitor 150.

The first electrode layer 110 and the third electrode layer 130 do not overlap with the second electrode layer 120, thereby forming a structural inductor. The first electrode layer 110, the third electrode layer 130 and the first structure capacitor 150 in the magnetic field enhancement assembly 10 constitute an LC oscillating circuit.

Referring to fig. 18, in an embodiment, one end of the first electrode layer 110 close to the second electrode layer 120 has a first gap 411. One end of the second electrode layer 120 close to the first electrode layer 110 has a second gap 412. The first notch 411 and the second notch 412 overlap in an orthographic projection of the first dielectric layer 100. The first gap 411 and the second gap 412 may be the same size.

When the magnetic field enhancement assembly 10 is placed in an excitation field of a magnetic resonance system, the overlapping portions of the orthographic projections of the first electrode layer 110 and the second electrode layer 120 on the first dielectric layer 100 may constitute the first structural capacitance 150. The first gap 411 and the second gap 412 can change the electric field distribution in the first structured capacitor 150. The first opening 411 and the second opening 412 can optimize local magnetic field distribution, and can improve the detection effect of detecting a specific position of a part.

Referring to fig. 19, in one embodiment, one end of the first electrode layer 110 close to the second electrode layer 120 has a third opening 413. The third opening 413 is spaced from the first opening 411. One end of the second electrode layer 120 close to the first electrode layer 110 has a fourth gap 414. The fourth gap 414 is spaced apart from the second gap 412. The third slit 413 and the fourth slit 414 overlap each other in an orthogonal projection of the first dielectric layer 100. It is understood that the first gap 411 and the third gap 413 may be the same in shape and size. The second gap 412 and the fourth gap 414 may be the same size and shape. The distance between the first gap 411 and the third gap 413 may be the same. The distance between the second gap 412 and the fourth gap 414 may be the same. The third gap 413 and the fourth gap 414 may be located at an overlapping portion of an orthographic projection of the first electrode layer 110 and the second electrode layer 120 on the first dielectric layer 100. The third opening 413 and the fourth opening 414 further optimize the local magnetic field distribution, and improve the detection effect of the specific position of the detection part.

One end of the first electrode layer 110 away from the third electrode layer 130 is the first electrical connection end 911. The end of the third electrode layer 130 away from the first electrode layer 110 is the second electrical connection end 912. The first conductive sheets 510 are respectively connected to the ends of the first electrode layers 110 of the magnetic field enhancement assemblies 10 away from the third electrode layer 130. The second conductive sheets 520 are respectively connected to the ends of the third electrode layers 130 of the magnetic field enhancement assemblies 10 away from the first electrode layer 110.

Referring to fig. 20, in one embodiment, the output matching circuit 640 is respectively connected to two electrodes of the first structural capacitor 150. That is, one end of the output matching circuit 640 is connected to the partial electrode of the first electrode layer 110 constituting the first structured capacitor 150, and the output matching circuit 640 is connected to the partial electrode of the second electrode layer 120 constituting the first structured capacitor 150. The output matching circuit 640 is used for adjusting the impedance value and the resonant frequency of the signal acquisition device.

The curved magnetic field enhancement device 20 can adjust the matching impedance at both ends of the signal acquisition device through the output matching circuit 640. The curved surface magnetic field enhancement device 20 can also adjust the resonant frequency through the output matching circuit 640, so that the resonant frequency of the output matching circuit 640 and the signal acquisition device on the output side is equal to the target frequency, and the strength of the output detection signal is improved. In the radio frequency receiving stage, the curved magnetic field enhancement device 20 resonates, and the magnetic field of the curved magnetic field enhancement device 20 has the same characteristics as the magnetic field generated by the human body feedback signal. The magnetic field enhancement assembly 10 can match the output impedance and increase the signal strength through the output matching circuit 640, and can extract the detection signal. Furthermore, the curved magnetic field enhancement device 20 is closer to the object to be detected, the detection sensitivity of the curved magnetic field enhancement device 20 is higher, and the detected image is clearer.

Referring also to fig. 21, in one embodiment, the first tuning circuit 60 is connected to two electrodes of the first structured capacitor 150. That is, one end of the first tuning circuit 60 is connected to the partial electrode of the first electrode layer 110 constituting the first structured capacitor 150, and the other end of the first tuning circuit 60 is connected to the partial electrode of the second electrode layer 120 constituting the first structured capacitor 150. The first tuning circuit 60 is used to make the curved magnetic field enhancement device 20 in which the magnetic field enhancement assembly 10 is located resonate during the radio frequency reception phase. The first tuning circuit 60 is used to tune the curved magnetic field enhancement device 20 in which the magnetic field enhancement assembly 10 is located during a radio frequency transmission phase.

Referring to fig. 22, in an embodiment, a portion of the first electrode layer 110 not forming the first structured capacitor 150 functions as a connection line. The first electrode layer 110 is not provided with a port for a part of the first structured capacitor 150, and two ends of the second tuning circuit 70 are connected to two ends of the port one by one. The second tuning circuit 70 is used to make the magnetic field enhancement assembly 10 conduct when in the radio frequency receiving phase, so as to increase the magnetic field strength of the human body feedback signal. The second tuning circuit 70 is also configured to be in a high impedance state during the radio frequency transmission phase. In the rf receiving stage, the second tuning circuit 70 connects two ends of the first electrode layer 110 to form an LC oscillating circuit. In the radio frequency transmitting stage, the second tuning circuit 70 disconnects the two ends of the first electrode layer 110, so that an LC oscillating circuit cannot be formed, and the second tuning circuit does not have the function of enhancing the magnetic field, thereby reducing the influence on the radio frequency transmitting magnetic field.

In one embodiment, the surface of the flexible support 500 is provided with a plurality of fixing structures 930. The plurality of fixed structures 930 are arranged in an array. A plurality of the fixing structures 930 are used to fix the magnetic field enhancement assemblies 10 one by one. The plurality of fixing structures 930 are arrayed on the same surface of the flexible supporting body 500. The magnetic field enhancement assembly 10 may be secured to the flexible support 500 by the securing structure 930.

The fixing structure 930 may be a strap or a snap, etc. The magnetic field enhancement assembly 10 is detachably fixed to the flexible support 500 by the fixing structure 930.

In one embodiment, the fixing structure 930 includes a first fixing member 931 and a second fixing member 932 arranged at intervals. The first fixing member 931 is used to fix one end of the magnetic field enhancement assembly 10. The second fixing member 932 is used to fix the other end of the magnetic field enhancement assembly 10. The first fixing part 931 and the second fixing part 932 are respectively used to fix both ends of the magnetic field enhancement assembly 10.

In one embodiment, the first fixing member 931 includes a U-shaped clip. The two ends of the U-shaped buckle comprise mounting plates. The mounting plate is provided with a through hole. The corresponding position of the flexible supporting body 500 is provided with a threaded hole. When the magnetic field enhancement assembly 10 needs to be mounted on the flexible support 500, the magnetic field enhancement assembly 10 is only required to be correspondingly placed on the surface of the flexible support 500, the U-shaped buckle is pressed on the magnetic field enhancement assembly 10, and a bolt penetrates through a through hole of the U-shaped buckle and is screwed into a threaded hole of the flexible support 500. When it is desired to detach the magnetic field enhancement assembly 10 from the flexible support 500, the bolts need only be unscrewed.

All possible combinations of the technical features of the above embodiments may not be described for the sake of brevity, but should be considered as within the scope of the present disclosure as long as there is no contradiction between the combinations of the technical features.

The above-described examples merely represent several embodiments of the present application and are not to be construed as limiting the scope of the claims. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the concept of the present application, which falls within the scope of protection of the present application. Therefore, the protection scope of the present patent application shall be subject to the appended claims.

Claims

1. A curved surface magnetic field enhancement device, comprising:

a flexible support (500), the flexible support (500) being bendable into a curved surface;

the magnetic field enhancement assemblies (10) are arranged on the flexible supporting body (500) in parallel at intervals, each magnetic field enhancement assembly (10) comprises a first electric connection end (911) and a second electric connection end (912), and a series-connected structural capacitor and inductor structure is connected between the first electric connection end (911) and the second electric connection end (912);

a first conductive sheet (510) respectively connected with the first electrical connection ends (911) of the plurality of magnetic field enhancement assemblies (10);

a second conductive sheet (520) respectively connected with the second electrical connection terminals (912) of the plurality of magnetic field enhancement assemblies (10), wherein the resonant frequency of the curved magnetic field enhancement device (20) is equal to a target frequency.

2. The curved magnetic field enhancement device according to claim 1, wherein the inductance value of the inductive structure in the magnetic field enhancement assembly (10) at the edges of the curved magnetic field enhancement device (20) is larger than the inductance value of the inductive structure in the magnetic field enhancement assembly (10) in the middle of the curved magnetic field enhancement device (20).

3. The curved magnetic field enhancing device according to claim 1, further comprising:

the output matching circuit (640), the output matching circuit (640) with first electricity connect (911) and be connected, the output matching circuit (640) still is used for being connected with signal acquisition device, the output matching circuit (640) is used for adjusting the impedance value and the resonant frequency of signal acquisition device.

4. A curved magnetic field enhancing device according to claim 3, wherein said output matching circuit (640) further comprises:

a matching capacitor (641), wherein one end of the matching capacitor (641) is connected with the positive electrode of the first electric connection end (911);

a tuning capacitor (642), the tuning capacitor (642) being connected between the other end of the matching capacitor (641) and the negative pole of the first electrical connection (911);

an output interface (643), the output interface (643) being connected in parallel with the tuning capacitor (642), the output interface (643) being configured to be connected with the signal acquisition device.

5. The curved magnetic field enhancing device according to claim 4, further comprising:

a second switch circuit (650), the second switch circuit (650) includes a first depletion type MOS transistor (652) and a second depletion type MOS transistor (653) connected in reverse series, a gate and a drain of the first depletion type MOS transistor (652) are connected to one end of the matching capacitor (641) far away from the tuning capacitor (642), a source of the first depletion type MOS transistor (652) is connected to a source of the second depletion type MOS transistor (653), a gate and a drain of the second depletion type MOS transistor (653) are connected to a positive electrode of the first electrical connection terminal (911), the first depletion type MOS transistor (652) and the second depletion type MOS transistor (653) are configured to be alternately turned on in a radio frequency receiving phase, and the first depletion type MOS transistor (652) and the second depletion type MOS transistor (653) are configured to be turned off in a radio frequency transmitting phase.

6. The curved magnetic field enhancing device according to claim 4, wherein the output matching circuit (640) is connected to the magnetic field enhancing assembly (10) located in the middle of the curved magnetic field enhancing device (20).

7. The curved magnetic field enhancing device of claim 1, wherein the magnetic field enhancing assembly (10) comprises:

a first dielectric layer (100) having opposing first (103) and second (104) ends and comprising opposing first (101) and second (102) surfaces;

a first electrode layer (110) disposed on the first surface (101) and extending along the first end (103) to the second end (104), wherein the first electrode layer (110) includes a first sub-electrode layer (111), a second sub-electrode layer (112) and a first connection layer (190), the first sub-electrode layer (111) and the second sub-electrode layer (112) have the same width and are disposed at an interval, one end of the first connection layer (190) is connected to the first sub-electrode layer (111), the other end of the first connection layer (190) is connected to the second sub-electrode layer (112), and the width of the first connection layer (190) is smaller than the width of the first sub-electrode layer (111);

a second electrode layer (120) and a third electrode layer (130) which are oppositely arranged on the second surface (102) at intervals, wherein the orthographic projection of the second electrode layer (120) on the first dielectric layer (100) is partially overlapped with the orthographic projection of the first sub-electrode layer (111) on the first dielectric layer (100) to form a second structural capacitor (302), and the orthographic projection of the third electrode layer (130) on the first dielectric layer (100) is partially overlapped with the orthographic projection of the first sub-electrode layer (111) on the first dielectric layer (100) to form a third structural capacitor (303);

a first tuning circuit (60), one end of the first tuning circuit (60) is connected with the first sub-electrode layer (111), the other end of the first tuning circuit (60) is connected with the second electrode layer (120), the first tuning circuit (60) is used for enabling the curved magnetic field enhancement device (20) to resonate when in a radio frequency receiving stage, and the first tuning circuit (60) is used for enabling the curved magnetic field enhancement device (20) to tune when in a radio frequency transmitting stage;

the second structure capacitor (302) is the first electrical connection end (911), the third structure capacitor (303) is the second electrical connection end (912), the first conductive sheet (510) is connected to the first sub-electrode layers (111) of the magnetic field enhancement assemblies (10), and the second conductive sheet (520) is connected to the second electrode layers (120) of the magnetic field enhancement assemblies (10).

8. The curved magnetic field enhancement device according to claim 7, wherein the first connection layer (190) extends at an acute or obtuse angle to a first direction, the first direction being directed from the first end (103) to the second end (104).

9. The curved magnetic field enhancement device according to claim 7, wherein the intersection of the sidewall of the first connection layer (190) and the sidewall of the first sub-electrode layer (111) is provided as an arc-shaped chamfer.

10. The curved magnetic field enhancing device of claim 7, wherein the first tuning circuit (60) comprises:

a first diode (431) and a second diode (432), wherein an anode of the first diode (431) is connected to the first sub-electrode layer (111), a cathode of the first diode (431) is connected to the second electrode layer (120), a cathode of the second diode (432) is connected to the first sub-electrode layer (111), and an anode of the second diode (432) is connected to the second electrode layer (120).