CN114905184B - Silver soldering paste and preparation method and application thereof - Google Patents
Silver soldering paste and preparation method and application thereof Download PDFInfo
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- CN114905184B CN114905184B CN202110168592.8A CN202110168592A CN114905184B CN 114905184 B CN114905184 B CN 114905184B CN 202110168592 A CN202110168592 A CN 202110168592A CN 114905184 B CN114905184 B CN 114905184B
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- Prior art keywords
- silver
- organic solvent
- silver powder
- temperature
- boiling point
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- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 title claims abstract description 108
- 229910052709 silver Inorganic materials 0.000 title claims abstract description 56
- 239000004332 silver Substances 0.000 title claims abstract description 56
- 238000005476 soldering Methods 0.000 title claims abstract description 25
- 238000002360 preparation method Methods 0.000 title abstract description 5
- 239000003960 organic solvent Substances 0.000 claims abstract description 39
- 229910000679 solder Inorganic materials 0.000 claims abstract description 37
- 150000001412 amines Chemical class 0.000 claims abstract description 26
- 239000003446 ligand Substances 0.000 claims abstract description 26
- 239000002243 precursor Substances 0.000 claims abstract description 26
- 238000001272 pressureless sintering Methods 0.000 claims abstract description 3
- 239000002994 raw material Substances 0.000 claims abstract description 3
- 238000009835 boiling Methods 0.000 claims description 29
- 239000002904 solvent Substances 0.000 claims description 26
- 238000005245 sintering Methods 0.000 claims description 25
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 23
- 238000000034 method Methods 0.000 claims description 21
- 238000010438 heat treatment Methods 0.000 claims description 19
- 238000002156 mixing Methods 0.000 claims description 16
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 claims description 15
- 230000008569 process Effects 0.000 claims description 14
- 238000003756 stirring Methods 0.000 claims description 14
- 239000002245 particle Substances 0.000 claims description 13
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 claims description 12
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 claims description 10
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 claims description 9
- XTHFKEDIFFGKHM-UHFFFAOYSA-N Dimethoxyethane Chemical compound COCCOC XTHFKEDIFFGKHM-UHFFFAOYSA-N 0.000 claims description 8
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 8
- WGYKZJWCGVVSQN-UHFFFAOYSA-N propylamine Chemical compound CCCN WGYKZJWCGVVSQN-UHFFFAOYSA-N 0.000 claims description 8
- WUOACPNHFRMFPN-SECBINFHSA-N (S)-(-)-alpha-terpineol Chemical compound CC1=CC[C@@H](C(C)(C)O)CC1 WUOACPNHFRMFPN-SECBINFHSA-N 0.000 claims description 6
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 claims description 6
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 claims description 6
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 6
- OVKDFILSBMEKLT-UHFFFAOYSA-N alpha-Terpineol Natural products CC(=C)C1(O)CCC(C)=CC1 OVKDFILSBMEKLT-UHFFFAOYSA-N 0.000 claims description 6
- 229940088601 alpha-terpineol Drugs 0.000 claims description 6
- ZXSQEZNORDWBGZ-UHFFFAOYSA-N 1,3-dihydropyrrolo[2,3-b]pyridin-2-one Chemical group C1=CN=C2NC(=O)CC2=C1 ZXSQEZNORDWBGZ-UHFFFAOYSA-N 0.000 claims description 4
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 claims description 4
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims description 4
- AMQJEAYHLZJPGS-UHFFFAOYSA-N N-Pentanol Chemical compound CCCCCO AMQJEAYHLZJPGS-UHFFFAOYSA-N 0.000 claims description 4
- KBPLFHHGFOOTCA-UHFFFAOYSA-N caprylic alcohol Natural products CCCCCCCCO KBPLFHHGFOOTCA-UHFFFAOYSA-N 0.000 claims description 4
- SQIFACVGCPWBQZ-UHFFFAOYSA-N delta-Terpineol Chemical compound CC(C)(O)C1CCC(=C)CC1 SQIFACVGCPWBQZ-UHFFFAOYSA-N 0.000 claims description 4
- NNRLDGQZIVUQTE-UHFFFAOYSA-N gamma-Terpineol Chemical compound CC(C)=C1CCC(C)(O)CC1 NNRLDGQZIVUQTE-UHFFFAOYSA-N 0.000 claims description 4
- 239000011261 inert gas Substances 0.000 claims description 4
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 claims description 4
- LKZMBDSASOBTPN-UHFFFAOYSA-L silver carbonate Substances [Ag].[O-]C([O-])=O LKZMBDSASOBTPN-UHFFFAOYSA-L 0.000 claims description 4
- 229910001958 silver carbonate Inorganic materials 0.000 claims description 4
- DKGAVHZHDRPRBM-UHFFFAOYSA-N Tert-Butanol Chemical compound CC(C)(C)O DKGAVHZHDRPRBM-UHFFFAOYSA-N 0.000 claims description 3
- 235000011187 glycerol Nutrition 0.000 claims description 3
- RUJPNZNXGCHGID-UHFFFAOYSA-N (Z)-beta-Terpineol Natural products CC(=C)C1CCC(C)(O)CC1 RUJPNZNXGCHGID-UHFFFAOYSA-N 0.000 claims description 2
- VPBZZPOGZPKYKX-UHFFFAOYSA-N 1,2-diethoxypropane Chemical compound CCOCC(C)OCC VPBZZPOGZPKYKX-UHFFFAOYSA-N 0.000 claims description 2
- 239000005456 alcohol based solvent Substances 0.000 claims description 2
- 239000004210 ether based solvent Substances 0.000 claims description 2
- TVMXDCGIABBOFY-UHFFFAOYSA-N n-Octanol Natural products CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 claims description 2
- QJVXKWHHAMZTBY-GCPOEHJPSA-N syringin Chemical compound COC1=CC(\C=C\CO)=CC(OC)=C1O[C@H]1[C@H](O)[C@@H](O)[C@H](O)[C@@H](CO)O1 QJVXKWHHAMZTBY-GCPOEHJPSA-N 0.000 claims description 2
- 239000000758 substrate Substances 0.000 description 42
- 238000012360 testing method Methods 0.000 description 30
- 239000010410 layer Substances 0.000 description 21
- 239000011248 coating agent Substances 0.000 description 16
- 238000000576 coating method Methods 0.000 description 16
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 14
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 10
- 238000004806 packaging method and process Methods 0.000 description 10
- 230000001603 reducing effect Effects 0.000 description 10
- 229910052786 argon Inorganic materials 0.000 description 7
- 238000003466 welding Methods 0.000 description 7
- QUSNBJAOOMFDIB-UHFFFAOYSA-N Ethylamine Chemical compound CCN QUSNBJAOOMFDIB-UHFFFAOYSA-N 0.000 description 6
- 238000000137 annealing Methods 0.000 description 6
- NDVLTYZPCACLMA-UHFFFAOYSA-N silver oxide Chemical compound [O-2].[Ag+].[Ag+] NDVLTYZPCACLMA-UHFFFAOYSA-N 0.000 description 6
- 239000012535 impurity Substances 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 239000000919 ceramic Substances 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 238000001878 scanning electron micrograph Methods 0.000 description 3
- 238000010008 shearing Methods 0.000 description 3
- CQLFBEKRDQMJLZ-UHFFFAOYSA-M silver acetate Chemical compound [Ag+].CC([O-])=O CQLFBEKRDQMJLZ-UHFFFAOYSA-M 0.000 description 3
- 229940071536 silver acetate Drugs 0.000 description 3
- XNGYKPINNDWGGF-UHFFFAOYSA-L silver oxalate Chemical compound [Ag+].[Ag+].[O-]C(=O)C([O-])=O XNGYKPINNDWGGF-UHFFFAOYSA-L 0.000 description 3
- 229910001923 silver oxide Inorganic materials 0.000 description 3
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- FOIXSVOLVBLSDH-UHFFFAOYSA-N Silver ion Chemical compound [Ag+] FOIXSVOLVBLSDH-UHFFFAOYSA-N 0.000 description 2
- -1 alcohol amines Chemical class 0.000 description 2
- VHRGRCVQAFMJIZ-UHFFFAOYSA-N cadaverine Chemical compound NCCCCCN VHRGRCVQAFMJIZ-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 150000004985 diamines Chemical class 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- JRBPAEWTRLWTQC-UHFFFAOYSA-N dodecylamine Chemical compound CCCCCCCCCCCCN JRBPAEWTRLWTQC-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004100 electronic packaging Methods 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- IOQPZZOEVPZRBK-UHFFFAOYSA-N octan-1-amine Chemical compound CCCCCCCCN IOQPZZOEVPZRBK-UHFFFAOYSA-N 0.000 description 2
- AOHJOMMDDJHIJH-UHFFFAOYSA-N propylenediamine Chemical compound CC(N)CN AOHJOMMDDJHIJH-UHFFFAOYSA-N 0.000 description 2
- KIDHWZJUCRJVML-UHFFFAOYSA-N putrescine Chemical compound NCCCCN KIDHWZJUCRJVML-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229940071575 silver citrate Drugs 0.000 description 2
- SQGYOTSLMSWVJD-UHFFFAOYSA-N silver(1+) nitrate Chemical compound [Ag+].[O-]N(=O)=O SQGYOTSLMSWVJD-UHFFFAOYSA-N 0.000 description 2
- XFNJVJPLKCPIBV-UHFFFAOYSA-N trimethylenediamine Chemical compound NCCCN XFNJVJPLKCPIBV-UHFFFAOYSA-N 0.000 description 2
- QUTYHQJYVDNJJA-UHFFFAOYSA-K trisilver;2-hydroxypropane-1,2,3-tricarboxylate Chemical compound [Ag+].[Ag+].[Ag+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O QUTYHQJYVDNJJA-UHFFFAOYSA-K 0.000 description 2
- YPFDHNVEDLHUCE-UHFFFAOYSA-N 1,3-propanediol Substances OCCCO YPFDHNVEDLHUCE-UHFFFAOYSA-N 0.000 description 1
- 229940035437 1,3-propanediol Drugs 0.000 description 1
- FJLUATLTXUNBOT-UHFFFAOYSA-N 1-Hexadecylamine Chemical compound CCCCCCCCCCCCCCCCN FJLUATLTXUNBOT-UHFFFAOYSA-N 0.000 description 1
- JPZYXGPCHFZBHO-UHFFFAOYSA-N 1-aminopentadecane Chemical compound CCCCCCCCCCCCCCCN JPZYXGPCHFZBHO-UHFFFAOYSA-N 0.000 description 1
- HXKKHQJGJAFBHI-UHFFFAOYSA-N 1-aminopropan-2-ol Chemical compound CC(O)CN HXKKHQJGJAFBHI-UHFFFAOYSA-N 0.000 description 1
- BMVXCPBXGZKUPN-UHFFFAOYSA-N 1-hexanamine Chemical compound CCCCCCN BMVXCPBXGZKUPN-UHFFFAOYSA-N 0.000 description 1
- 229940058020 2-amino-2-methyl-1-propanol Drugs 0.000 description 1
- JZUHIOJYCPIVLQ-UHFFFAOYSA-N 2-methylpentane-1,5-diamine Chemical compound NCC(C)CCCN JZUHIOJYCPIVLQ-UHFFFAOYSA-N 0.000 description 1
- MHZGKXUYDGKKIU-UHFFFAOYSA-N Decylamine Chemical compound CCCCCCCCCCN MHZGKXUYDGKKIU-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 150000001338 aliphatic hydrocarbons Chemical class 0.000 description 1
- CBTVGIZVANVGBH-UHFFFAOYSA-N aminomethyl propanol Chemical compound CC(C)(N)CO CBTVGIZVANVGBH-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- HQABUPZFAYXKJW-UHFFFAOYSA-N butan-1-amine Chemical compound CCCCN HQABUPZFAYXKJW-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- IUNMPGNGSSIWFP-UHFFFAOYSA-N dimethylaminopropylamine Chemical compound CN(C)CCCN IUNMPGNGSSIWFP-UHFFFAOYSA-N 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 229940031098 ethanolamine Drugs 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- PWSKHLMYTZNYKO-UHFFFAOYSA-N heptane-1,7-diamine Chemical compound NCCCCCCCN PWSKHLMYTZNYKO-UHFFFAOYSA-N 0.000 description 1
- NAQMVNRVTILPCV-UHFFFAOYSA-N hexane-1,6-diamine Chemical compound NCCCCCCN NAQMVNRVTILPCV-UHFFFAOYSA-N 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 229940102253 isopropanolamine Drugs 0.000 description 1
- LQBJWKCYZGMFEV-UHFFFAOYSA-N lead tin Chemical compound [Sn].[Pb] LQBJWKCYZGMFEV-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- FJDUDHYHRVPMJZ-UHFFFAOYSA-N nonan-1-amine Chemical compound CCCCCCCCCN FJDUDHYHRVPMJZ-UHFFFAOYSA-N 0.000 description 1
- 229920000166 polytrimethylene carbonate Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 229910001961 silver nitrate Inorganic materials 0.000 description 1
- LMEWRZSPCQHBOB-UHFFFAOYSA-M silver;2-hydroxypropanoate Chemical compound [Ag+].CC(O)C([O-])=O LMEWRZSPCQHBOB-UHFFFAOYSA-M 0.000 description 1
- 125000004079 stearyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- ABVVEAHYODGCLZ-UHFFFAOYSA-N tridecan-1-amine Chemical compound CCCCCCCCCCCCCN ABVVEAHYODGCLZ-UHFFFAOYSA-N 0.000 description 1
- QFKMMXYLAPZKIB-UHFFFAOYSA-N undecan-1-amine Chemical compound CCCCCCCCCCCN QFKMMXYLAPZKIB-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
- B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
- B23K35/3006—Ag as the principal constituent
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
- B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
- B23K35/0244—Powders, particles or spheres; Preforms made therefrom
- B23K35/025—Pastes, creams, slurries
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/36—Selection of non-metallic compositions, e.g. coatings, fluxes; Selection of soldering or welding materials, conjoint with selection of non-metallic compositions, both selections being of interest
- B23K35/3612—Selection of non-metallic compositions, e.g. coatings, fluxes; Selection of soldering or welding materials, conjoint with selection of non-metallic compositions, both selections being of interest with organic compounds as principal constituents
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
The invention discloses a silver soldering paste, a preparation method and application thereof, wherein the silver soldering paste comprises the following raw material components: silver powder, complex of silver precursor and amine ligand, and multi-temperature-zone organic solvent system carrier. The silver solder paste has good, uniform and compact bonding degree of the connecting interface of the connecting layer formed under pressureless sintering.
Description
Technical Field
The invention belongs to the technical field of device packaging, and particularly relates to silver soldering paste, and a preparation method and application thereof.
Background
With the increasing demand for new electronic fields, such as aerospace, electronic automobiles, displays, radio frequency electrons, etc., for efficient use of energy sources, miniaturized packages and high temperature device applications, wide band gap semiconductors based on SiC and GaN have received widespread attention due to their high breakdown voltage, high thermal conductivity, and high electron density and mobility. Compared with the instability of the traditional silicon-based semiconductor under high-temperature application, the wide-bandgap semiconductor shows perfect reliability under high temperature (more than 250) DEG C, and can meet the high-temperature application of a power device. However, conventional tin-lead solders cannot meet the requirement of high-temperature service of chip interconnection joints, so that development of more advanced bonding materials with perfect performance in the field of manufacturing wide-bandgap semiconductors becomes a critical challenge.
Silver has received extensive attention in the field of wide bandgap semiconductor packaging due to its perfect thermal conductivity and high service temperature. However, silver has a high melting point, so that it is difficult to meet the requirements of industrial application. However, the advent of nanosilver solves this problem, and nanosilver has very small dimensions, which gives it many advantages. Firstly, the small size can generate some quantum effects, then the small size means that the specific surface area is larger, the melting point of the material is not required to be reached in the sintering process, and the driving force caused by the reduction of the surface area can be used for realizing the interatomic diffusion, so that the effect of sintering interconnection is realized. Therefore, solders filled with nano silver are gradually attracting attention of researchers.
The traditional nano silver solder paste has lower original stacking density, and a large amount of volume shrinkage can be generated due to solvent volatilization during sintering, so that the problems of larger porosity, collapse of a three-dimensional stacking structure and the like are caused, and the problems of reduced welding rate and low mechanical strength are caused due to the fact that cracks are easy to occur during pressureless welding. The existing nano silver paste is sintered by pressure assistance, and the problems of poor mechanical property of a joint, low interface welding rate and the like often exist when a pressureless process is used. In the prior art, most of chip welding and device packaging require the use of a non-pressure process, so that the damage to welding devices caused by pressure is prevented, and the complexity of the process is reduced, therefore, development of non-pressure silver solder paste with good sintering performance is urgently needed, and the problem that an effective interconnection structure is difficult to form when the silver solder paste is bonded in a non-pressure mode is solved.
Disclosure of Invention
In order to solve the problems set forth in the background art, the invention aims to provide a silver solder paste, a preparation method and application thereof. The invention can be well applied to the field of electronic packaging of high-temperature service of pressureless welding, and the shearing strength can reach 5-20 MPa, so that the invention can be well applied to pressureless packaging interconnection of electronic devices.
In order to achieve the above purpose, the technical scheme adopted by the invention is as follows: in one aspect, the invention provides a silver soldering paste, which comprises the following raw material components: silver powder, complex of silver precursor and amine ligand, and multi-temperature-zone organic solvent system carrier.
Further, the mass ratio of the silver powder to the complex of the silver precursor and the amine ligand to the multi-temperature-zone organic solvent system carrier is 2-10: 1 to 5:1.
further, the silver powder comprises one or more of flake silver powder and spherical silver powder;
preferably, the particle diameter of the flake silver powder is 1-10 mu m, and the thickness is 100-500 nm;
preferably, the particle diameter of the spherical silver powder is 10nm to 200nm;
preferably, when the silver powder includes a combination of plate-like silver powder and spherical silver powder, the mass ratio of the plate-like silver powder to the spherical silver powder is 5 to 9:5 to 1.
Further, the complex of the silver precursor and the amine ligand is prepared by stirring the silver precursor and the amine ligand in a cold bath for 10-60 min according to the mol ratio of 1:1-10.
Further, the silver precursor comprises one of silver oxide, silver nitrate, silver acetate, silver oxalate, silver lactate, silver citrate and silver carbonate;
preferably, the amine ligand comprises one or more of monoamines, diamines, alcohol amines; more preferably, the monoamine comprises one or more of ethylamine, n-propylamine, n-butylamine, hexylamine, octylamine, nonylamine, decylamine, undecylamine, dodecylamine, tridecylamine, dodecylamine, pentadecylamine, hexadecylamine, octadecyl saturated aliphatic hydrocarbon monoamine; more preferably, the diamine comprises ethylenediamine, N-dimethylethylenediamine, N-diethylethylenediamine, 1, 3-propylenediamine, 2-dimethyl-1, 3-propylenediamine, N, N-dimethyl-1, 3-propanediamine, N '-diethyl-1, 3-propanediamine, 1, 4-butanediamine, N-dimethyl-1, 4-butanediamine, N, one or more of N' -dimethyl-1, 4-butanediamine, N-diethyl-1, 4-butanediamine, N '-diethyl-1, 4-butanediamine, 1, 5-pentanediamine, 1, 5-diamino-2-methylpentane, 1, 6-hexanediamine, N-dimethyl-1, 6-hexanediamine, N' -dimethyl-1, 6-hexanediamine, 1, 7-heptanediamine; more preferably, the alcohol amine comprises one or more of ethanolamine, isopropanolamine, 2-amino-2-methyl-1-propanol, N-diethyl-1, 3-propanediol diamine.
Further, the multi-temperature-zone organic solvent system carrier comprises an organic solvent with a boiling point of 50-100 ℃, an organic solvent with a boiling point of 100-200 ℃ and an organic solvent with a boiling point of 200-300 ℃;
preferably, the volume ratio of the organic solvent with the boiling point of 50-100 ℃, the organic solvent with the boiling point of 100-200 ℃ and the organic solvent with the boiling point of 200-300 ℃ is 1-2: 2 to 4:1 to 3. The organic solvent with the boiling point of 200-300 ℃ is high-boiling point soldering flux.
Further, the organic solvent with the boiling point of 50-100 ℃ comprises one or more of methanol, isopropanol, n-propanol, tertiary butanol and ethanol;
preferably, the organic solvent with the boiling point of 100-200 ℃ comprises one or more of alcohol solvents, alcohol ether solvents, dimethyl sulfoxide (DMSO) and Dimethylformamide (DMF); more preferably, the alcohol solvent comprises one or more of ethylene glycol, propylene glycol, n-amyl alcohol, n-octanol; more preferably, the alcohol ether solvent comprises one or more of ethylene glycol dimethyl ether, propylene glycol diethyl ether and propylene glycol methyl ether;
preferably, the organic solvent with the boiling point of 200-300 ℃ comprises one or more of alpha-terpineol, beta-terpineol, gamma-terpineol, delta-terpineol and glycerin.
In another aspect, the present invention provides a method for preparing the silver solder paste described in any one of the above, comprising the steps of: and stirring and mixing the silver powder, the complex of the silver precursor and the amine ligand and the multi-temperature-zone organic solvent system carrier for 10-30min to prepare the silver soldering paste.
In still another aspect, the present invention provides an application of any one of the foregoing silver solder paste in an electronic device package interconnection structure, where the electronic device package interconnection structure includes a first mother sheet, a second mother sheet, and a connection layer for connecting the first mother sheet and the second mother sheet, where the connection layer is formed by sintering the silver solder paste by using any one of the foregoing silver solder paste through a sintering process.
Further, the sintering process is to adopt multi-stage temperature control to perform pressureless sintering in inert gas;
preferably, the sintering process comprises the steps of: firstly, preheating at 50-100 ℃ for 5-60 min (drying low boiling point solvent), then slowly heating to 100-200 ℃ at the speed of 0.1-3 ℃/s, bonding at the temperature for 30-180 min (evaporating medium boiling point solvent and exerting the reduction characteristic thereof), heating to 200-300 ℃ at the speed of 0.1-3 ℃/s, and continuously bonding at the temperature for 30-180 min (evaporating high boiling point solvent and exerting the reduction characteristic thereof, and bonding treatment temperature ensuring that silver nano particles are fully diffusion sintered). Under different interval temperatures, the solvent plays a role in dispersing so that silver powder can be more uniformly dispersed, and the silver powder is formed in the bonding process and is more uniform and compact in structure.
Preferably, the sintering atmosphere comprises inert gases such as nitrogen, argon, helium and the like;
preferably, the sintering device comprises a tube furnace, an annealing furnace, a reflow furnace, and the like.
Further, the first master slice or the second master slice comprises copper, gold and silver slices, or ceramic slices, silicon slices, functional devices and the like coated with copper, gold and silver on the surface layers.
The beneficial effects of the invention are as follows: the silver soldering paste provided by the invention comprises silver powder, a complex of a silver precursor and an amine ligand, and a multi-temperature-zone organic solvent system carrier, wherein silver nano particles generated by in-situ decomposition of the complex of the silver precursor and the amine ligand under the action of a thermal field are used for filling pores generated when a solvent volatilizes, and meanwhile, the three-temperature-zone system is used for enabling the original nano silver particles to be more uniformly dispersed, so that nano particles generated by the decomposition of the complex of the silver precursor and the amine ligand are more densely and fully filled to realize a more compact interconnection structure; the sintering process provided by the invention is mainly a sintering process controlled in multiple temperature stages under inert gas atmosphere according to solvent systems in different temperature areas; according to the silver soldering paste and the sintering process, compared with other pressurizing conditions, bonding can be realized under the condition of no pressure at the temperature of 300 ℃, the sintering temperature is far lower than the melting point (961.8 ℃) of massive silver, the silver soldering paste can be well applied to the field of electronic packaging of non-low-temperature welding high-temperature service, the bonding degree of a connecting interface of a connecting layer formed by sintering the soldering paste is good, uniform and compact, sectional sintering can be realized under the temperature of 300 ℃, the shearing strength can reach more than 10MPa, and the silver soldering paste has high shearing strength and can be well applied to packaging interconnection of electronic devices.
Drawings
FIG. 1 is a schematic view of a copper-clad ceramic substrate according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of a package interconnect structure in an embodiment of the invention;
FIG. 3 is an SEM image of spherical silver powder used in example 3 of the present invention;
FIG. 4 is an SEM image of the shear fracture surface of a tie layer of example 3 of the present invention;
the ceramic substrate 1, the metal coating 2, the first master slice 3, the connecting layer 4 and the second master slice 5.
Detailed Description
For a better understanding of the present invention, the following description will further explain the present invention in conjunction with specific embodiments, but the present invention is not limited to the following examples.
Example 1
Firstly, isopropanol, glycol and alpha-terpineol are mixed according to the volume ratio of 1:2:1, mixing and preparing the silver oxalate and the ethylenediamine into a multi-temperature-zone organic solvent system carrier, wherein the molar ratio of the silver oxalate to the ethylenediamine is 1:4, preparing a complex of a silver precursor and an amine ligand under the ice bath by electromagnetic stirring for 30 min; then silver powder (spherical silver powder with the particle size of 60 nm), a complex of silver precursor and amine ligand and a multi-temperature-zone organic solvent system carrier are mixed according to the mass ratio of 6:2:1, and stirring and mixing for 30min in a mixer to prepare the silver soldering paste.
The silver solder paste prepared by the method is applied to a packaging interconnection structure of an electronic device. The schematic structure of the package interconnection structure is shown in fig. 2, and the first master and the second master in the package interconnection structure are selected as DBC substrates, and the schematic structure of the DBC substrates is shown in fig. 1.
First, a master is processed: the DBC substrate (the first master and the second master) was ultrasonically washed in ethanol for 3min to remove impurities from the surface and dried.
Then, the silver solder paste prepared in this embodiment is uniformly coated on the connection surface of the DBC substrate and then stacked on each other, so as to obtain a "sandwich" structure of the DBC substrate/solder paste coating/DBC substrate.
Then, placing the stacked structure of the DBC substrate/the soldering paste coating/the DBC substrate into an annealing furnace, vacuumizing, introducing nitrogen to enable the nitrogen to be filled in a cabin, firstly heating to 75 ℃ at 2 ℃/s, preheating at 75 ℃ for 30min to dry a low-boiling-point solvent, then slowly heating to 180 ℃ at a speed of 1 ℃/s, bonding at the temperature for 120min to evaporate the medium-boiling-point solvent and exert the reducing property, heating to 250 ℃ at a speed of 2 ℃/s, and continuously bonding at the temperature for 60min to evaporate the high-boiling-point solvent and exert the reducing property. The solder paste coating is sintered to form a connection layer and cooled to obtain the package interconnect structure shown in fig. 2.
After testing, the shear force was measured to be 5.2MPa after the connection layer formed by sintering the solder paste of this example was cooled (wherein 5 test samples were prepared according to this example, and the test data were averaged over 5 test samples).
It should be noted that the shear fracture test for the connection layer specifically includes: the sample is fixed on a fixed clamp of a shear force tester, the tester is controlled to push and compress the sample at a speed of 100 micrometers per second to perform a shear fracture test, and corresponding shear force is read from the shear force tester when the sample breaks.
Example 2
Firstly, methanol, ethylene glycol dimethyl ether and alpha-terpineol are mixed according to the volume ratio of 1:2:1, mixing and preparing the silver oxide and the propylenediamine into a multi-temperature-zone organic solvent system carrier, wherein the molar ratio of the silver oxide to the propylenediamine is 1:4, preparing a complex of a silver precursor and an amine ligand under the ice bath by electromagnetic stirring for 30 min; then silver powder (flake silver powder with the particle size of 5 mu m and the thickness of 300 nm), a complex of silver precursor and amine ligand and a multi-temperature-zone organic solvent system carrier are mixed according to the mass ratio of 6:2:1, and stirring and mixing for 30min in a mixer to prepare the silver soldering paste.
The silver solder paste prepared by the method is applied to a packaging interconnection structure of an electronic device. The schematic structure of the package interconnection structure is shown in fig. 2, and the first master and the second master in the package interconnection structure are selected as DBC substrates, and the schematic structure of the DBC substrates is shown in fig. 1.
First, a master is processed: the DBC substrate (the first master and the second master) was ultrasonically washed in ethanol for 3min to remove impurities from the surface and dried.
Then, the silver solder paste prepared in this embodiment is uniformly coated on the connection surface of the DBC substrate and then stacked on each other, so as to obtain a "sandwich" structure of the DBC substrate/solder paste coating/DBC substrate.
Then, placing the stacked structure of the DBC substrate/the soldering paste coating/the DBC substrate into an annealing furnace, vacuumizing, introducing nitrogen to enable the nitrogen to be filled in a cabin, firstly heating to 60 ℃ at 2 ℃/s, preheating for 20min at 60 ℃ to dry a low boiling point solvent, then slowly heating to 150 ℃ at a speed of 1 ℃/s, bonding for 120min at the temperature to evaporate the medium boiling point solvent and exert the reducing property, heating to 250 ℃ at a speed of 2 ℃/s, and continuously bonding for 60min at the temperature to evaporate the high boiling point solvent and exert the reducing property. The solder paste coating is sintered to form a connection layer and cooled to obtain the package interconnect structure shown in fig. 2.
After testing, the shear force was measured to be 6.7MPa after the connection layer formed by sintering the solder paste of this example was cooled (wherein 5 test samples were prepared according to this example, and the test data were averaged over 5 test samples).
It should be noted that the shear fracture test for the connection layer specifically includes: the sample is fixed on a fixed clamp of a shear force tester, the tester is controlled to push and compress the sample at a speed of 100 micrometers per second to perform a shear fracture test, and corresponding shear force is read from the shear force tester when the sample breaks.
Example 3
Firstly, ethanol, dimethyl sulfoxide and glycerin are mixed according to the volume ratio of 1:2:1, mixing and preparing the silver acetate and ethylamine into a multi-temperature-zone organic solvent system carrier, wherein the molar ratio of the silver acetate to the ethylamine is 1:4, preparing a complex of a silver precursor and an amine ligand under the ice bath by electromagnetic stirring for 30 min; then silver powder (spherical silver powder with the particle size of 60 nm), a complex of silver precursor and amine ligand and a multi-temperature-zone organic solvent system carrier are mixed according to the mass ratio of 6:2:1, and stirring and mixing for 30min in a mixer to prepare the silver soldering paste.
The silver solder paste prepared by the method is applied to a packaging interconnection structure of an electronic device. The schematic structure of the package interconnection structure is shown in fig. 2, and the first master and the second master in the package interconnection structure are selected as DBC substrates, and the schematic structure of the DBC substrates is shown in fig. 1.
First, a master is processed: the DBC substrate (the first master and the second master) was ultrasonically washed in ethanol for 3min to remove impurities from the surface and dried.
Then, the silver solder paste prepared in this embodiment is uniformly coated on the connection surface of the DBC substrate and then stacked on each other, so as to obtain a "sandwich" structure of the DBC substrate/solder paste coating/DBC substrate.
Then, placing the stacked structure of the DBC substrate/the soldering paste coating/the DBC substrate into an annealing furnace, vacuumizing, introducing argon to enable the argon to be filled in a cabin, firstly heating to 50 ℃ at 2 ℃/s, preheating for 30min at 50 ℃ to dry a low-boiling-point solvent, then slowly heating to 150 ℃ at a speed of 1 ℃/s, bonding for 180min at the temperature to evaporate the medium-boiling-point solvent and exert the reducing property, heating to 300 ℃ at a speed of 2 ℃/s, and continuously bonding for 60min at the temperature to evaporate the high-boiling-point solvent and exert the reducing property. The solder paste coating is sintered to form a connection layer and cooled to obtain the package interconnect structure shown in fig. 2.
After testing, the shear force was measured to be 10.2MPa after the connection layer formed by sintering the solder paste of this example was cooled (wherein 5 test samples were prepared according to this example, and the test data were averaged over 5 test samples). The SEM image of the shear fracture surface of the connection layer in this embodiment is shown in fig. 4, and it can be seen from the image that the shear fracture surface shows a uniform and compact structure, and compared with the original silver powder of fig. 3, the silver powder after bonding forms a more compact and uniform interconnection structure, the porosity is lower, aggregation among particles is more obvious, and a larger plastic deformation structure is shown.
It should be noted that the shear fracture test for the connection layer specifically includes: the sample is fixed on a fixed clamp of a shear force tester, the tester is controlled to push and compress the sample at a speed of 100 micrometers per second to perform a shear fracture test, and corresponding shear force is read from the shear force tester when the sample breaks.
Example 4
Firstly, methanol, propylene glycol and alpha-terpineol are mixed according to the volume ratio of 1:2:1, mixing and preparing a multi-temperature-zone organic solvent system carrier, and then mixing silver citrate and octylamine according to a molar ratio of 1:4, preparing a complex of a silver precursor and an amine ligand under the ice bath by electromagnetic stirring for 30 min; then mixing silver powder (the flaky silver powder with the particle size of 2 mu m and the thickness of 300nm and spherical silver powder with the particle size of 20nm according to the mass ratio of 8:2), a complex of a silver precursor and an amine ligand and a multi-temperature-zone organic solvent system carrier according to the mass ratio of 6:2:1, and stirring and mixing for 30min in a mixer to prepare the silver soldering paste.
The silver solder paste prepared by the method is applied to a packaging interconnection structure of an electronic device. The schematic structure of the package interconnection structure is shown in fig. 2, and the first master and the second master in the package interconnection structure are selected as DBC substrates, and the schematic structure of the DBC substrates is shown in fig. 1.
First, a master is processed: the DBC substrate (the first master and the second master) was ultrasonically washed in ethanol for 3min to remove impurities from the surface and dried.
Then, the silver solder paste prepared in this embodiment is uniformly coated on the connection surface of the DBC substrate and then stacked on each other, so as to obtain a "sandwich" structure of the DBC substrate/solder paste coating/DBC substrate.
Then, placing the stacked structure of the DBC substrate/the soldering paste coating/the DBC substrate into an annealing furnace, vacuumizing, introducing argon to enable the argon to be filled in a cabin, firstly heating to 65 ℃ at 2 ℃/s, preheating for 30min at 65 ℃ to dry a low-boiling-point solvent, then slowly heating to 200 ℃ at a speed of 1 ℃/s, bonding for 180min at the temperature to evaporate the medium-boiling-point solvent and exert the reducing property, heating to 300 ℃ at a speed of 2 ℃/s, and continuously bonding for 60min at the temperature to evaporate the high-boiling-point solvent and exert the reducing property. The solder paste coating is sintered to form a connection layer and cooled to obtain the package interconnect structure shown in fig. 2.
After testing, the shear force was measured to be 10.2MPa after the connection layer formed by sintering the solder paste of this example was cooled (wherein 5 test samples were prepared according to this example, and the test data were averaged over 5 test samples).
It should be noted that the shear fracture test for the connection layer specifically includes: the sample is fixed on a fixed clamp of a shear force tester, the tester is controlled to push and compress the sample at a speed of 100 micrometers per second to perform a shear fracture test, and corresponding shear force is read from the shear force tester when the sample breaks.
Example 5
Firstly, methanol, ethylene glycol dimethyl ether and alpha-terpineol are mixed according to the volume ratio of 1:2:1, mixing and preparing the silver carbonate and ethylenediamine and propylamine into a multi-temperature-zone organic solvent system carrier, wherein the molar ratio of the silver carbonate to the ethylenediamine to the propylamine is 1:2:2, preparing a complex of a silver precursor and an amine ligand under the ice bath by electromagnetic stirring for 30 min; then mixing silver powder (the silver powder is formed by mixing flake silver powder with the particle size of 1 mu m and the thickness of 100nm and spherical silver powder with the particle size of 60nm according to the mass ratio of 8:2), a complex of a silver precursor and an amine ligand, and a multi-temperature-zone organic solvent system carrier according to the mass ratio of 6:2:1, and stirring and mixing for 30min in a mixer to prepare the silver soldering paste.
The silver solder paste prepared by the method is applied to a packaging interconnection structure of an electronic device. The schematic structure of the package interconnection structure is shown in fig. 2, and the first master and the second master in the package interconnection structure are selected as DBC substrates, and the schematic structure of the DBC substrates is shown in fig. 1.
First, a master is processed: the DBC substrate (the first master and the second master) was ultrasonically washed in ethanol for 3min to remove impurities from the surface and dried.
Then, the silver solder paste prepared in this embodiment is uniformly coated on the connection surface of the DBC substrate and then stacked on each other, so as to obtain a "sandwich" structure of the DBC substrate/solder paste coating/DBC substrate.
Then, placing the stacked structure of the DBC substrate/the soldering paste coating/the DBC substrate into an annealing furnace, vacuumizing, introducing argon to enable the argon to be filled in a cabin, firstly heating to 80 ℃ at 1 ℃/s, preheating for 30min at 80 ℃ to dry a low boiling point solvent, then slowly heating to 120 ℃ at the speed of 1 ℃/s, bonding for 180min at the temperature to evaporate the medium boiling point solvent and exert the reducing property, heating to 280 ℃ at the speed of 2 ℃/s, and continuously bonding for 60min at the temperature to evaporate the high boiling point solvent and exert the reducing property. The solder paste coating is sintered to form a connection layer and cooled to obtain the package interconnect structure shown in fig. 2.
After testing, the shear force was measured to be 17.3MPa after the connection layer formed by sintering the solder paste of this example was cooled (wherein 5 test samples were prepared according to this example, and the test data were averaged over 5 test samples).
It should be noted that the shear fracture test for the connection layer specifically includes: the sample is fixed on a fixed clamp of a shear force tester, the tester is controlled to push and compress the sample at a speed of 100 micrometers per second to perform a shear fracture test, and corresponding shear force is read from the shear force tester when the sample breaks.
The foregoing is merely a specific embodiment of the present invention and not all embodiments, and any equivalent modifications of the technical solution of the present invention that will be obvious to those skilled in the art from reading the present specification are intended to be encompassed by the claims of the present invention.
Claims (9)
1. The silver soldering paste is characterized by comprising the following raw material components: silver powder, a complex of a silver precursor and an amine ligand, and a multi-temperature-zone organic solvent system carrier;
the silver powder comprises one or more of flake silver powder and spherical silver powder;
the particle size of the flake silver powder is 1-10 mu m, and the thickness is 100-500 nm;
the multi-temperature-zone organic solvent system carrier comprises an organic solvent with a boiling point of 50-100 ℃, an organic solvent with a boiling point of 100-200 ℃ and an organic solvent with a boiling point of 200-300 ℃;
the volume ratio of the organic solvent with the boiling point of 50-100 ℃, the organic solvent with the boiling point of 100-200 ℃ and the organic solvent with the boiling point of 200-300 ℃ is 1-2: 2 to 4:1 to 3;
the organic solvent with the boiling point of 200-300 ℃ is selected from one or more of alpha-terpineol, beta-terpineol, gamma-terpineol, delta-terpineol and glycerin;
the complex of the silver precursor and the amine ligand is prepared by stirring the silver precursor and the amine ligand in a cold bath for 10-60 min according to a molar ratio of 1:4;
the silver precursor is silver carbonate; the amine ligands are ethylenediamine and propylamine.
2. The silver paste according to claim 1, wherein the mass ratio of the silver powder, the complex of the silver precursor and the amine ligand, and the multi-temperature zone organic solvent system carrier is 2-10: 1 to 5:1.
3. the silver paste according to claim 1, wherein the spherical silver powder has a particle diameter of 10nm to 200nm;
4. the silver paste according to claim 1, wherein when the silver powder comprises a combination of plate-like silver powder and spherical silver powder, the mass ratio of the plate-like silver powder to the spherical silver powder is 5 to 9:5 to 1.
5. The silver paste according to claim 1, wherein the organic solvent having a boiling point of 50 to 100 ℃ comprises one or more of methanol, isopropanol, n-propanol, t-butanol, and ethanol.
6. The silver paste as claimed in claim 5, wherein the organic solvent having a boiling point of 100 to 200 ℃ comprises one or more of alcohol solvents, alcohol ether solvents, dimethyl sulfoxide (DMSO), dimethylformamide (DMF); the alcohol solvent comprises one or more of ethylene glycol, propylene glycol, n-amyl alcohol and n-octanol; the alcohol ether solvent comprises one or more of ethylene glycol dimethyl ether, propylene glycol diethyl ether and propylene glycol methyl ether.
7. A method of producing a silver solder paste according to any one of claims 1 to 6, comprising the steps of: and stirring and mixing the silver powder, the complex of the silver precursor and the amine ligand and the multi-temperature-zone organic solvent system carrier for 10-30min to prepare the silver soldering paste.
8. Use of a silver paste according to any one of claims 1 to 6 in an electronic device package interconnect structure comprising a first master, a second master and a connection layer for connecting the first master and the second master, characterized in that the connection layer is formed by sintering by a sintering process using a silver paste according to any one of claims 1 to 6.
9. The use according to claim 8, wherein the sintering process is pressureless sintering in an inert gas using multi-stage temperature control;
the sintering process comprises the following steps: firstly preheating for 5-60 min at 50-100 ℃, then slowly heating to 100-200 ℃ at the speed of 0.1-3 ℃/s, bonding for 30-180 min at the temperature, heating to 200-300 ℃ at the speed of 0.1-3 ℃/s, and continuing bonding for 30-180 min at the temperature.
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