CN114899265A - Germanium-silicon detector with point-like metal contact structure - Google Patents
Germanium-silicon detector with point-like metal contact structure Download PDFInfo
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- CN114899265A CN114899265A CN202210823413.4A CN202210823413A CN114899265A CN 114899265 A CN114899265 A CN 114899265A CN 202210823413 A CN202210823413 A CN 202210823413A CN 114899265 A CN114899265 A CN 114899265A
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- 229910052751 metal Inorganic materials 0.000 title claims abstract description 72
- 239000002184 metal Substances 0.000 title claims abstract description 72
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 title claims abstract description 28
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 37
- 239000010703 silicon Substances 0.000 claims abstract description 37
- 229910052732 germanium Inorganic materials 0.000 claims abstract description 30
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims abstract description 29
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 230000003287 optical effect Effects 0.000 claims abstract description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 35
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- 239000002210 silicon-based material Substances 0.000 claims description 7
- 150000002739 metals Chemical class 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 238000010521 absorption reaction Methods 0.000 abstract description 6
- 239000000463 material Substances 0.000 description 7
- 238000000034 method Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 3
- 238000004891 communication Methods 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
- H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PIN type
- H01L31/1055—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PIN type the devices comprising amorphous materials of Group IV of the Periodic System
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a germanium-silicon detector with a point-like metal contact structure, which comprises an SOI substrate layer, wherein the SOI substrate layer comprises top silicon on the upper part, a P-type heavily doped active layer, an N-type heavily doped active layer, an undoped intrinsic germanium layer and a point-like metal contact electrode are arranged on the top silicon, the P-type heavily doped active layer, the undoped intrinsic germanium layer and the N-type heavily doped active layer form a horizontal or longitudinal PIN structure, the point-like metal contact electrodes are respectively arranged on the P-type heavily doped active layer and the N-type heavily doped active layer, and the overlap between an optical mode and metal can be greatly reduced by using the point-like metal contact structure, so that the absorption loss is reduced, and the responsivity of the germanium-silicon detector is improved.
Description
Technical Field
The invention relates to the technical field of photoelectric detectors, in particular to a germanium-silicon detector with a point-like metal contact structure.
Background
Silicon-based optoelectronics integrates photonic devices with microelectronic integrated circuits with mature processes, with significant advantages in price, reliability, integration, and designability. The germanium-based photoelectric detector is a key structure in a silicon-based photoelectric link as a light-to-electricity converter, is one of important schemes for preparing a silicon-based integrated photoelectric detector at present, is compatible with a silicon-based CMOS (complementary metal oxide semiconductor) process, and has a response waveband covering a communication waveband. Because the submicron waveguide device and the germanium-silicon detector integrated at the rear end of the waveguide are small in size, the germanium-silicon detector is the preferred scheme of a chip-level optical interconnection system.
In order to meet the requirement of integrating an optical receiver on a chip, the germanium-silicon detector mostly adopts an evanescent wave lateral coupling mode, namely a waveguide germanium-silicon detector. Compared with the traditional vertical incidence type germanium-silicon detector, the waveguide type germanium-silicon detector can create longer absorption length to realize higher light absorption. But the growth of the active region of the sige detector results in a larger volume of the metal layer in contact therewith. Since the metal electrode is opaque to and absorbs infrared light severely, infrared light coupled into the germanium material by the silicon waveguide is absorbed by the metal layer, which results in a reduction in the responsivity of the detector.
Disclosure of Invention
Aiming at the defects in the prior art, the invention aims to provide a germanium-silicon detector with a point-like metal contact structure, which improves the responsivity of the detector by reducing the contact between an active region and metal and is particularly suitable for a detector with a longer absorption germanium layer.
In order to achieve the purpose, the invention provides the following technical scheme:
the invention discloses a germanium-silicon detector with a point-like metal contact structure, which comprises an SOI substrate layer, wherein the SOI substrate layer comprises top silicon on the upper part, a P-type heavily doped active layer, an N-type heavily doped active layer, an undoped intrinsic germanium layer and point-like metal contact electrodes are arranged on the top silicon, the P-type heavily doped active layer, the undoped intrinsic germanium layer and the N-type heavily doped active layer form a horizontal or longitudinal PIN structure, and the point-like metal contact electrodes are respectively arranged on the P-type heavily doped active layer and the N-type heavily doped active layer.
Preferably, a silicon material layer is arranged at the bottom of the SOI substrate layer, and a silicon dioxide buried layer is arranged between the silicon material layer and the top silicon layer.
Preferably, the top silicon layer is connected with an incident light waveguide through a wedge waveguide.
Preferably, the P-type heavily doped active layer and the N-type heavily doped active layer comprise germanium layers or silicon layers.
Preferably, for the horizontal PIN structure, a P-type lightly doped layer and an N-type lightly doped layer are respectively arranged between the P-type heavily doped active layer and the N-type heavily doped active layer and the undoped intrinsic germanium layer.
Preferably, for the longitudinal PIN structure, a P-type lightly doped silicon layer is arranged between the P-type heavily doped active layer and the top silicon layer.
Preferably, the dot-shaped metal contact electrode includes a single dot-shaped metal or a combination of a plurality of dot-shaped metals.
Preferably, the cross section of the point-shaped metal contact electrode is square, rectangular, circular or polygonal.
Preferably, the point-like metal contact electrode is aluminum, copper or gold.
The invention has the beneficial effects that: because the traditional evanescent wave coupling type germanium-silicon detector needs to increase the length of an active region to enhance the absorption of a light source, the increase of the active region can increase a metal electrode connected with the active region, but the metal electrode can absorb light intensity, and the overlapping between an optical mode and metal can be greatly reduced by using a point-shaped metal contact structure, so that the absorption loss is reduced, and the responsivity of the germanium-silicon detector is improved.
Drawings
FIG. 1 is a schematic structural diagram of an embodiment of the present invention;
FIG. 2 is a schematic top view of an embodiment of the present invention;
FIG. 3 is a schematic three-dimensional structure of an embodiment of the present invention;
FIG. 4 is a schematic top view of a longitudinal PIN structure according to an embodiment of the present invention;
FIG. 5 is a schematic diagram of a longitudinal PIN structure according to an embodiment of the present invention;
FIG. 6 shows the contrast simulation result of the responsivity of the detector with the conventional metal electrode structure, which is increased along with the active region;
in FIGS. 1-5: the optical waveguide structure comprises a 10-SOI substrate, a 11-silicon material layer, a 12-silicon dioxide filling layer, a 13-top silicon layer, a 20-germanium material layer, a 21-P type heavily doped active layer, a 22-undoped intrinsic germanium layer, a 23-N type heavily doped active layer, a 30-point metal contact electrode, a 31-P type heavily doped region point metal structure, a 32-N type heavily doped region point metal structure, a 4-wedge waveguide and a 5-incident optical waveguide.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is further described in detail below with reference to the accompanying drawings and examples. It should be understood, however, that the description herein of specific embodiments is only intended to illustrate the invention and not to limit the scope of the invention. Moreover, in the following description, descriptions of well-known structures and techniques are omitted so as to not unnecessarily obscure the concepts of the present invention.
As shown in fig. 1 to fig. 3, an embodiment of the present invention provides a sige detector with a dotted metal contact structure, which includes an SOI substrate layer 10, where the SOI substrate layer 10 includes top silicon 13 on an upper portion, a silicon material layer 11 is disposed at a bottom of the SOI substrate layer 10, a silicon dioxide buried layer 12 is disposed between the silicon material layer 11 and the top silicon 13, a P-type heavily doped active layer 21, an N-type heavily doped active layer 23, an undoped intrinsic germanium layer 22, and a dotted metal contact electrode 30 are disposed on the top silicon 13, the P-type heavily doped active layer 21, the undoped intrinsic germanium layer 22, and the N-type heavily doped active layer 23 form a horizontal or vertical PIN structure, and the dotted metal contact electrode 30 is disposed on the P-type heavily doped active layer 21 and the N-type heavily doped active layer 23, respectively.
Further, the top layer silicon 13 is connected with the incident light waveguide 5 through the wedge waveguide 4, the top layer silicon 13, the wedge waveguide 4 and the incident light waveguide 5 are of an integrated structure, and the wedge waveguide 4 is used for transferring incident light from the small-sized incident light waveguide 5 to the top layer silicon 13 and introducing the incident light into the detector.
Further, the P-type heavily doped active layer 21 and the N-type heavily doped active layer 23 comprise germanium layers or silicon layers, the P-type heavily doped and the N-type heavily doped in the horizontal PIN structure are both doped in the germanium layers, and the P-type heavily doped in the longitudinal PIN structure is doped in the silicon layers.
Further, for the horizontal PIN structure, a germanium material layer 20 is horizontally arranged and composed of a P-type heavily doped active layer 21, an undoped intrinsic germanium layer 22 and an N-type heavily doped active layer 23 and is arranged on the upper surface of the top silicon 13, and a P-type lightly doped layer and an N-type lightly doped layer are respectively arranged between the P-type heavily doped active layer 21 and the N-type heavily doped active layer 23 and the undoped intrinsic germanium layer 22.
Further, for the longitudinal PIN structure, the P-type heavily doped active layer 21, the undoped intrinsic germanium layer 22 and the N-type heavily doped active layer 23 are sequentially distributed on the top silicon 13 and the germanium material layer 20 from low to high, wherein the P-type heavily doped active layer 21 is embedded in the upper end of the top silicon 13, the P-type lightly doped silicon layer is arranged between the P-type heavily doped active layer 21 and the top silicon 13, the undoped intrinsic germanium layer 22 is arranged on the upper surface of the top silicon 13, and the N-type heavily doped active layer 23 is arranged on the undoped intrinsic germanium layer 22, as shown in fig. 4 and 5.
Further, the dot-shaped metal contact electrode 30 includes a single dot-shaped metal or a combination of a plurality of dot-shaped metals. The point-shaped metal means that the contact area of the metal electrode and the P-type heavily doped active layer and the N-type heavily doped active layer is extremely small and is point-shaped, the selection of the combination of the single point-shaped metal and the plurality of point-shaped metals is determined according to the area of the heavily doped active layer, if the area of the heavily doped active layer is small, the single point-shaped metal electrode can be selected to be connected with the heavily doped active layer, and if the area of the heavily doped active layer is large, the plurality of point-shaped metal electrodes can be selected to be connected with the heavily doped active layer.
Further, the cross section of the point-like metal contact electrode 30 is square, rectangular, circular or polygonal.
Further, the point-like metal contact electrode 30 is aluminum, copper or gold. The point-shaped metal electrode connected with the P-type heavily doped active layer is a P-type heavily doped point-shaped metal structure 31, and the point-shaped metal electrode connected with the N-type heavily doped active layer is an N-type heavily doped point-shaped metal structure 32.
In this embodiment, the sige detector operates in an O or C band, the P-type heavy doping of the sige detector is on the Ge layer, the N-type heavy doping is also on the Ge layer, and the P-type heavy doping and the N-type heavy doping and the intrinsic Ge layer form a PIN horizontal sige detector together with the light-absorbing intrinsic Ge layer. As shown in fig. 2 and fig. 3, the width of the incident optical waveguide 5 is 0.5um, the width of the end of the wedge waveguide (taper) is 0.8um, the width of the germanium material layer 20 is 1um, and the length is 15 um. The cross section of the point contact metal electrode is square, the number of the point contact metal electrodes is 5 above the P type heavily doped region, and 5 above the N type heavily doped region. The invention can be used as a receiving device in a long-distance optical fiber communication system or a short-distance optical interconnection system, and can also be used for on-chip large-scale integration based on a CMOS (complementary metal oxide semiconductor) process. The optical signal enters the detector through the waveguide, and is converted into an electric signal under reverse bias, so that photoelectric detection is realized.
Compared with the traditional long-strip metal electrode germanium-silicon detector, the germanium-silicon detector with the point-like metal contact structure can greatly reduce the overlapping between the optical mode and the metal, thereby reducing the absorption loss and improving the responsivity of the germanium-silicon detector. As shown in fig. 6, compared with the conventional long-strip-shaped metal contact on the germanium material, the germanium-silicon detector with the point-shaped metal contact structure can greatly improve the responsivity of the device. Specifically, under the same germanium region length and the same incident light power, the detector with the point-type metal electrode structure can convert more photocurrent compared with the traditional detector with the long-strip-type metal contact electrode structure on the germanium material, and the photoelectric detection efficiency is greatly improved.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents or improvements made within the spirit and principle of the present invention should be included in the scope of the present invention.
Claims (9)
1. The utility model provides a germanium-silicon detector of punctiform metal contact structure which characterized in that: the silicon-based SOI structure comprises an SOI substrate layer, wherein the SOI substrate layer comprises top silicon on the upper portion, a P-type heavily doped active layer, an N-type heavily doped active layer, an undoped intrinsic germanium layer and a point-shaped metal contact electrode are arranged on the top silicon, the P-type heavily doped active layer, the undoped intrinsic germanium layer and the N-type heavily doped active layer form a horizontal or longitudinal PIN structure, and the point-shaped metal contact electrode is respectively arranged on the P-type heavily doped active layer and the N-type heavily doped active layer.
2. The germanium-silicon detector with a point-like metal contact structure as claimed in claim 1, wherein: and a silicon material layer is arranged at the bottom of the SOI substrate layer, and a silicon dioxide buried layer is arranged between the silicon material layer and the top silicon.
3. The germanium-silicon detector with a point-like metal contact structure as claimed in claim 1, wherein: the top silicon layer is connected with an incident optical waveguide through a wedge waveguide.
4. The germanium-silicon detector with a point-like metal contact structure as claimed in claim 1, wherein: the P-type heavily doped active layer and the N-type heavily doped active layer comprise germanium layers or silicon layers.
5. The germanium-silicon detector with a point-like metal contact structure as claimed in claim 1, wherein: and for the horizontal PIN structure, a P-type lightly doped layer and an N-type lightly doped layer are respectively arranged between the P-type heavily doped active layer and the N-type heavily doped active layer and the undoped intrinsic germanium layer.
6. The germanium-silicon detector with a point-like metal contact structure as claimed in claim 1, wherein: for the longitudinal PIN structure, a P-type lightly doped silicon layer is arranged between the P-type heavily doped active layer and the top silicon layer.
7. The germanium-silicon detector with a point-like metal contact structure as claimed in claim 1, wherein: the point-shaped metal contact electrode comprises a single point-shaped metal or a combination of more than two point-shaped metals.
8. The germanium-silicon detector with a point-like metal contact structure as claimed in claim 1, wherein: the section of the point-shaped metal contact electrode is square, rectangular, circular or polygonal.
9. The germanium-silicon detector with a point-like metal contact structure as claimed in claim 1, wherein: the point-like metal contact electrode is aluminum, copper or gold.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202210823413.4A CN114899265A (en) | 2022-07-14 | 2022-07-14 | Germanium-silicon detector with point-like metal contact structure |
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| CN202210823413.4A CN114899265A (en) | 2022-07-14 | 2022-07-14 | Germanium-silicon detector with point-like metal contact structure |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20150214387A1 (en) * | 2014-01-24 | 2015-07-30 | Electronics And Telecommunications Research Institute | Photodetector |
| CN109585610A (en) * | 2018-12-29 | 2019-04-05 | 华进半导体封装先导技术研发中心有限公司 | A kind of production method of Butt-coupling type detector and Butt-coupling type detector |
| CN109786497A (en) * | 2019-01-29 | 2019-05-21 | 中国科学院微电子研究所 | Uniline carrier photodetector |
| US20190196296A1 (en) * | 2017-12-22 | 2019-06-27 | Imec Vzw | Multimode Interference Based VPIN Diode Waveguides |
| CN112349803A (en) * | 2020-10-30 | 2021-02-09 | 武汉光谷信息光电子创新中心有限公司 | Germanium-silicon photoelectric detector |
| CN113035982A (en) * | 2021-03-03 | 2021-06-25 | 中国电子科技集团公司第三十八研究所 | All-silicon-doped multi-junction electric field enhanced germanium optical waveguide detector |
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2022
- 2022-07-14 CN CN202210823413.4A patent/CN114899265A/en active Pending
Patent Citations (7)
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|---|---|---|---|---|
| US20150214387A1 (en) * | 2014-01-24 | 2015-07-30 | Electronics And Telecommunications Research Institute | Photodetector |
| US20190196296A1 (en) * | 2017-12-22 | 2019-06-27 | Imec Vzw | Multimode Interference Based VPIN Diode Waveguides |
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Application publication date: 20220812 |