CN114899145A - Manufacturing method of shared contact hole - Google Patents
Manufacturing method of shared contact hole Download PDFInfo
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- CN114899145A CN114899145A CN202210395913.2A CN202210395913A CN114899145A CN 114899145 A CN114899145 A CN 114899145A CN 202210395913 A CN202210395913 A CN 202210395913A CN 114899145 A CN114899145 A CN 114899145A
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- contact hole
- soc
- amorphous carbon
- etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76814—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics post-treatment or after-treatment, e.g. cleaning or removal of oxides on underlying conductors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76816—Aspects relating to the layout of the pattern or to the size of vias or trenches
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
The invention discloses a shared contact hole manufacturing method, wherein the shared contact hole is composed of a contact hole A and a contact hole B which are manufactured in sequence, the contact hole A is filled with amorphous carbon or SOC after being formed, then the contact hole B is manufactured, the residual amorphous carbon or SOC is removed, and a final shared contact hole composed of the contact hole A and the contact hole B is formed in an SRAM area. According to the invention, the method of depositing amorphous carbon or SOC is added after the contact hole A is formed to protect the shared contact hole from being influenced by secondary etching, the contact hole A is protected from secondary etching by utilizing the high etching selection ratio of the amorphous carbon or SOC and the contact hole B, SiGe is protected from being etched through, the appearance of the shared contact hole can be ensured to meet the requirement, the etching process window is enlarged, and the performance of PMOS is improved.
Description
Technical Field
The invention relates to the field of semiconductor manufacturing, in particular to a manufacturing method of a shared contact hole.
Background
In the current semiconductor process, the source-drain region damascene SiGe strain technology is widely used to increase the speed of PMOS, and the compressive stress applied to the channel can effectively increase the hole mobility, thereby improving the performance of PMOS.
With the development of semiconductor related manufacturing processes, the difficulty of Contact hole (CT) processes is increased along with the trend of scaling down integrated circuit chips according to the scale size, so that a double-layer exposure (double patterning) process is often adopted in more advanced processes, one mask plate (mask) is split into two or more masks, for example, a common mask of a Contact hole layer is split into a mask a connected with a source region and a mask B connected with a gate, and photoetching and etching are respectively carried out to form required patterns so as to finish pattern splitting. In a Static Random Access Memory (SRAM), a shared contact (shared CT) structure exists, and the structure is firstly etched to form a contact a based on mask a, and then etched to form a contact B based on mask B, so that the contact a is easily etched for the second time and the bottom SiGe is etched through in the etching process of the contact B, as shown in fig. 1, the compressive stress generated by the SiGe is released, thereby affecting the performance of the PMOS.
Therefore, how to ensure that the shared CT is completely etched without causing the negative effect of bottom SiGe being etched through is a difficult point in the contact hole process. At present, the common method is to reduce the secondary etching of the contact hole by adjusting the etching process, but the method has the defects that the etching process window is smaller, and the etching difficulty is increased.
Disclosure of Invention
In this summary, a series of simplified form concepts are introduced that are simplifications of the prior art in this field, which will be described in further detail in the detailed description. This summary of the invention is not intended to identify key features or essential features of the claimed subject matter, nor is it intended to be used as an aid in determining the scope of the claimed subject matter.
The invention aims to solve the technical problem of providing a shared contact hole manufacturing method which can avoid the influence of secondary etching, protect SiGe from being damaged and ensure the appearance of the shared contact hole in the shared contact hole manufacturing process.
In order to solve the technical problem, the shared contact hole is composed of a contact hole A and a contact hole B which are manufactured in sequence, the contact hole A is fully filled with amorphous carbon or SOC after being formed, then the contact hole B is manufactured, residual amorphous carbon or SOC is removed, and a final shared contact hole composed of the contact hole A and the contact hole B is formed in an SRAM area.
Optionally, the manufacturing method of the shared contact hole is further improved, and the manufacturing method comprises the following steps:
s1, depositing a metal diffusion prevention layer after the metal grid is formed, and then depositing an interlayer dielectric layer;
s2, photoetching by using the photomask A to form a pattern of the contact hole A, and forming a final pattern of the contact hole A by adopting dry etching;
s3, depositing amorphous carbon or SOC to make the amorphous carbon or SOC completely cover the contact hole A and exceed the surface of the interlayer dielectric layer by the designated height;
s4, etching off amorphous carbon or SOC, and stopping etching on the interlayer dielectric layer;
s5, photoetching by using a photomask B to form a pattern of the contact hole B, etching to form a final pattern of the contact hole B, and forming a shared contact hole formed by the contact hole A and the contact hole B in the SRAM area;
and S6, removing the amorphous carbon or SOC in the contact hole A by adopting an oxygen ashing process.
Optionally, the method for manufacturing the shared contact hole is further modified, and in step S1, silicon oxide is deposited as a metal diffusion prevention layer.
Optionally, the method for manufacturing the shared contact hole is further improved, and in step S1, silicon dioxide is deposited as an interlayer dielectric layer.
Optionally, the method for manufacturing the shared contact hole is further modified, and in step S4, the amorphous carbon or SOC is etched away by using a dry etching back process, a Chemical Mechanical Polishing (CMP) process or a wet etching process.
Optionally, the method for manufacturing the shared contact hole is further modified, and in step S5, a final pattern of the contact hole B is formed by dry etching.
Optionally, the method for manufacturing the shared contact hole is further modified, and in step S6, the amorphous carbon or SOC in the contact hole a is removed by using an oxygen ashing process or a wet etching process.
Optionally, the method for fabricating the shared contact hole is further improved, in step S3, amorphous carbon or SOC is deposited with a height more than 200 a above the interlayer dielectric layer.
Optionally, the method for fabricating a shared contact hole is further modified, and in step S4, the height difference of the etched amorphous carbon or SOC surface is less than 100 a.
According to the invention, the shared contact hole is protected from being influenced by secondary etching by adding a method of depositing amorphous carbon or SOC (system on chip) after the contact hole A is formed, the contact hole A is protected from secondary etching by utilizing the high etching selection ratio of the amorphous carbon to the contact hole B, SiGe is protected from being etched through, the appearance of the shared contact hole can be ensured to meet the requirement, the etching process window is enlarged, and the performance of PMOS (P-channel metal oxide semiconductor) is improved.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention, are incorporated in and constitute a part of this specification. The drawings are not necessarily to scale, however, and may not be intended to accurately reflect the precise structural or performance characteristics of any given embodiment, and should not be construed as limiting or restricting the scope of values or properties encompassed by exemplary embodiments in accordance with the invention. The invention is described in further detail below with reference to the following figures and embodiments:
FIG. 1 is a first schematic diagram of the present invention.
FIG. 2 is a first schematic diagram of the present invention.
FIG. 3 is a second schematic diagram of the present invention.
FIG. 4 is a third schematic diagram of the present invention.
FIG. 5 is a fourth schematic diagram of the present invention.
FIG. 6 is a fifth schematic diagram of the present invention.
Fig. 7 is a sixth schematic diagram of the present invention.
Detailed Description
The embodiments of the present invention are described below with reference to specific embodiments, and other advantages and technical effects of the present invention will be fully apparent to those skilled in the art from the disclosure in the specification. The invention is capable of other embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the general spirit of the invention. It should be noted that the features in the following embodiments and examples may be combined with each other without conflict. The following exemplary embodiments of the present invention may be embodied in many different forms and should not be construed as limited to the specific embodiments set forth herein. It is to be understood that these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the technical solutions of these exemplary embodiments to those skilled in the art.
A first embodiment;
the invention provides a shared contact hole manufacturing method, wherein the shared contact hole is composed of a contact hole A and a contact hole B which are manufactured in sequence, the contact hole A is filled with amorphous carbon or SOC after being formed, then the contact hole B is manufactured, residual amorphous carbon or SOC is removed, and a final shared contact hole composed of the contact hole A and the contact hole B is formed in an SRAM area.
It will be understood that when an element is referred to as being "connected" or "coupled" to another element, it can be directly connected or coupled to the other element or intervening elements may be present. In contrast, when an element is referred to as being "directly connected" or "directly coupled" to another element, there are no intervening elements present. Like reference numerals refer to like elements throughout the drawings. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items. Other words used to describe the relationship between elements or layers (e.g., "between … …" and "directly between … …", "adjacent to … …" and "directly adjacent to … …", "on … …" and "directly on … …", etc.) should be interpreted in the same manner.
A second embodiment;
the invention provides a manufacturing method of a shared contact hole, which comprises the following steps:
s1, depositing a metal diffusion prevention layer after the metal grid is formed, and then depositing an interlayer dielectric layer;
s2, photoetching by using the photomask A to form a pattern of the contact hole A, and forming a final pattern of the contact hole A by adopting dry etching;
s3, depositing amorphous carbon or SOC to make the amorphous carbon or SOC completely cover the contact hole A and exceed the surface of the interlayer dielectric layer by the designated height;
s4, etching off amorphous carbon or SOC, and stopping etching on the interlayer dielectric layer;
s5, photoetching by using a photomask B to form a pattern of the contact hole B, etching to form a final pattern of the contact hole B, and forming a shared contact hole formed by the contact hole A and the contact hole B in the SRAM area;
and S6, removing the amorphous carbon or SOC in the contact hole A by adopting an oxygen ashing process.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of exemplary embodiments according to the invention. As used herein, the singular is intended to include the plural unless the context clearly dictates otherwise. It will be further understood that the terms "comprises" and/or "comprising," when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof.
A third embodiment;
the invention provides a manufacturing method of a shared contact hole, which comprises the following steps:
s1, depositing silicon oxide as a metal diffusion prevention layer after the metal grid is formed, and then depositing silicon dioxide as an interlayer dielectric layer;
s2, photoetching by using the photomask A to form a pattern of the contact hole A, and forming a final pattern of the contact hole A by adopting dry etching;
s3, depositing amorphous carbon or SOC to make the amorphous carbon or SOC completely cover the contact hole A and exceed the surface of the interlayer dielectric layer by the designated height;
s4, etching off amorphous carbon or SOC, and stopping etching on the interlayer dielectric layer;
s5, photoetching by using a photomask B to form a pattern of the contact hole B, etching to form a final pattern of the contact hole B, and forming a shared contact hole formed by the contact hole A and the contact hole B in the SRAM area;
and S6, removing the amorphous carbon or SOC in the contact hole A by adopting an oxygen ashing process.
A fourth embodiment;
the invention provides a manufacturing method of a shared contact hole, which comprises the following steps:
s1, depositing silicon oxide as a metal diffusion prevention layer after the metal grid is formed, and then depositing silicon dioxide as an interlayer dielectric layer;
s2, using the photomask A to carry out photoetching to form a pattern of the contact hole A, and adopting dry etching to form a final pattern of the contact hole A;
s3, depositing amorphous carbon or SOC to make the amorphous carbon or SOC completely cover the contact hole A, the height of the deposited amorphous carbon or SOC exceeds the interlayer dielectric layer by more than 200 angstroms;
s4, etching off amorphous carbon or SOC by dry etching, Chemical Mechanical Polishing (CMP) or wet etching, stopping etching on the interlayer dielectric layer, and making the height difference range of the amorphous carbon or SOC surface less than 100 angstroms after etching;
s5, photoetching by using a photomask B to form a pattern of the contact hole B, etching to form a final pattern of the contact hole B, and forming a shared contact hole formed by the contact hole A and the contact hole B in the SRAM area;
and S6, removing the amorphous carbon or SOC in the contact hole A by adopting an oxygen ashing process.
A fifth embodiment;
the invention provides a manufacturing method of a shared contact hole, which comprises the following steps:
s1, depositing silicon oxide as a metal diffusion prevention layer after the metal gate is formed, and then depositing silicon oxide as an interlayer dielectric layer, as shown in fig. 2;
s2, carrying out photoetching by using the photomask A to form a pattern of the contact hole A, and forming a final pattern of the contact hole A by adopting dry etching, which is shown in reference to FIG. 3;
s3, depositing amorphous carbon or SOC to make the amorphous carbon or SOC completely cover the contact hole A, and depositing the amorphous carbon or SOC with a height more than 200 angstroms beyond the interlayer dielectric layer, as shown in FIG. 4;
s4, etching off amorphous carbon or SOC by dry etching, Chemical Mechanical Polishing (CMP) or wet etching, stopping etching on the interlayer dielectric layer, and making the height difference range of the amorphous carbon or SOC surface less than 100 angstroms after etching, as shown in fig. 5;
s5, forming a pattern of the contact hole B by using a mask B for photolithography, removing amorphous carbon or SOC in the contact hole a by using an oxygen ashing process or wet etching, forming a shared contact hole composed of the contact hole a and the contact hole B in the SRAM region, as shown in fig. 6;
s6, an oxygen ashing process is used to remove the amorphous carbon or SOC in the contact hole a, as shown in fig. 7.
Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the relevant art and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.
The present invention has been described in detail with reference to the specific embodiments and examples, but these are not intended to limit the present invention. Many variations and modifications may be made by one of ordinary skill in the art without departing from the principles of the present invention, which should also be considered as within the scope of the present invention.
Claims (9)
1. A manufacturing method of a shared contact hole is characterized in that: the shared contact hole is composed of a contact hole A and a contact hole B which are manufactured in sequence, after the contact hole A is formed, the contact hole A is filled with amorphous carbon or SOC, then the contact hole B is manufactured, the residual amorphous carbon or SOC is removed, and a final shared contact hole composed of the contact hole A and the contact hole B is formed in an SRAM area.
2. The method of claim 1, comprising the steps of:
s1, depositing a metal diffusion prevention layer after the metal grid is formed, and then depositing an interlayer dielectric layer;
s2, photoetching by using the photomask A to form a pattern of the contact hole A, and forming a final pattern of the contact hole A by adopting dry etching;
s3, depositing amorphous carbon or SOC to make the amorphous carbon or SOC completely cover the contact hole A and exceed the surface of the interlayer dielectric layer by the designated height;
s4, etching off amorphous carbon or SOC, and stopping etching on the interlayer dielectric layer;
s5, photoetching by using a photomask B to form a pattern of the contact hole B, etching to form a final pattern of the contact hole B, and forming a shared contact hole formed by the contact hole A and the contact hole B in the SRAM area;
and S6, removing the amorphous carbon or SOC in the contact hole A by adopting an oxygen ashing process.
3. The method of claim 2, wherein: in step S1, silicon oxide is deposited as a metal diffusion preventing layer.
4. The method of claim 2, wherein: in step S1, silicon dioxide is deposited as an interlayer dielectric layer.
5. The method of claim 2, wherein: in step S4, the amorphous carbon or SOC is etched away by dry etch back process, Chemical Mechanical Polishing (CMP), or wet etch.
6. The method of claim 2, wherein: in step S5, a final pattern of contact hole B is formed by dry etching.
7. The method of claim 2, wherein: in step S6, the amorphous carbon or SOC in the contact hole a is removed by an oxygen ashing process or a wet etching process.
8. The method of claim 2, wherein: in step S3, amorphous carbon or SOC is deposited to a height greater than 200 angstroms above the interlevel dielectric layer.
9. The method of claim 2, wherein: in step S4, the height difference of the etched amorphous carbon or SOC surface is less than 100 angstroms.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210395913.2A CN114899145A (en) | 2022-04-14 | 2022-04-14 | Manufacturing method of shared contact hole |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210395913.2A CN114899145A (en) | 2022-04-14 | 2022-04-14 | Manufacturing method of shared contact hole |
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| Publication Number | Publication Date |
|---|---|
| CN114899145A true CN114899145A (en) | 2022-08-12 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202210395913.2A Pending CN114899145A (en) | 2022-04-14 | 2022-04-14 | Manufacturing method of shared contact hole |
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| CN (1) | CN114899145A (en) |
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- 2022-04-14 CN CN202210395913.2A patent/CN114899145A/en active Pending
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