CN114894348B - Performance optimization method, device and medium of ion capacitive flexible pressure sensor - Google Patents
Performance optimization method, device and medium of ion capacitive flexible pressure sensor Download PDFInfo
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Abstract
The invention discloses a performance optimization method, a device and a medium of an ion capacitance type flexible pressure sensor, wherein the method comprises the following steps: placing a support structure between the electrode layer and the electrolyte layer; controlling influencing factors of the supporting structure, and performing parallel experimental tests to obtain data; the sensitivity, the linearity and the bearing range of the sensor under the condition of each supporting structure are obtained according to data calculation; analyzing the intrinsic reasons of the influence of each supporting structure on each performance of the sensor sensitivity, linearity and bearing range; and obtaining a performance optimization strategy of the ion capacitive flexible pressure sensor based on the regulation and control of the supporting structure. According to the invention, the supporting structure for assisting in sensor packaging is regulated and controlled, the performance of the ion capacitance type flexible pressure sensor under various supporting conditions is analyzed and discussed, and the influence modes of various influence factors on the sensor performance are summarized, so that the ion capacitance type flexible pressure sensor can be widely applied to the field of flexible wearable sensing.
Description
Technical Field
The invention relates to the field of flexible wearable sensing, in particular to a performance optimization method, device and medium of an ion capacitance type flexible pressure sensor.
Background
With the continuous development of technology and the continuous improvement of the living standard of substances of people, flexible wearable equipment is widely and widely applied in the fields of artificial intelligence, health monitoring and the like, and the performance improvement of the wearable equipment becomes a main target of research and development of scientific researchers. The flexible wearable pressure sensor is used as an important ring of flexible wearable equipment, and is widely applied in various fields such as physiological signal detection, man-machine interaction interfaces, fingerprint identification, wind tunnel experiments and the like. The ion capacitive pressure sensor has the advantages of high sensitivity, high drift stability, low power consumption, low temperature dependence and the like as a hotspot in the current research field, so that the ion capacitive pressure sensor attracts extensive researches of scientific researchers in various countries so as to improve various performance indexes such as sensitivity, linearity, bearing range and the like.
The conventional ion capacitance type pressure sensor is generally of a sandwich structure formed by laminating an upper electrode, an electrolyte and a lower electrode layer by layer, and a great deal of research work focuses on structural design and advanced material research of the electrodes and the electrolyte layer in order to improve various performances such as sensitivity, linearity and the like of the sensor. The prior researches of structural design comprise pyramid structures, hemispherical structures, prismatic structures, porous structures, fold structures, random rough surface structures and the like, the prior researches of electrode materials comprise carbon materials, metal fiber materials, gold-plated polymer materials and the like, and the prior researches of electrolyte materials comprise mixtures of various polymers and ionic solutions.
In addition, reasonable packaging mode not only can promote the stability of sensor performance, has positive influence to performances such as sensor sensitivity, linearity, pressure-bearing scope equally, but has been studied to use this as the regulation core to realize the promotion by a wide margin of sensor performance. At present, the influence of the supporting structure for auxiliary packaging on the sensor performance is not systematically researched, and further exploration is needed.
Disclosure of Invention
In order to solve at least one of the technical problems existing in the prior art to a certain extent, the invention aims to provide a performance optimization method, a device and a medium of an ion capacitance type flexible pressure sensor.
The technical scheme adopted by the invention is as follows:
a performance optimization method of an ion capacitance type flexible pressure sensor based on support structure regulation and control comprises the following steps:
placing a support structure between an electrode layer and an electrolyte layer of an ion capacitive flexible pressure sensor;
controlling influencing factors of the supporting structure, performing parallel experimental tests, and counting capacitance-pressure data under each supporting condition;
according to the counted capacitance-pressure data, calculating to obtain the sensitivity, linearity and bearing range of the sensor under the condition of each supporting structure;
analyzing the intrinsic reasons of the influence of each support structure on each performance of the sensor sensitivity, linearity and pressure-bearing range based on the influence of the support structure on the sensor initial capacitance value and the blocking mode of the loading process;
and summarizing to obtain a performance optimization strategy of the ion capacitive flexible pressure sensor based on the regulation and control of the supporting structure.
Further, the thickness of the supporting structure is 0.1-1 times of the thickness of the electrode layer; or alternatively, the first and second heat exchangers may be,
the thickness of the supporting structure is 0.1-1 times of the thickness of the electrolyte layer.
Further, the shape of the support structure in the length-width direction is kept corresponding to the shape of the electrode layer. The shape of the support structure in the length-width direction is generally annular, and when the electrode and the electrolyte layer are circular, the shape of the support structure is circular; when the electrode and the electrolyte layer are rectangular, the shape of the supporting structure is rectangular ring, that is, the supporting structure is corresponding to the shape of the electrode and the electrolyte layer
Further, the support structure is used to provide an initial distance between the sensor electrode, the electrolyte layer, and to hinder the loading process of the sensor.
Further, the barrier effect of the support structure on the sensor loading process is composed of two parts, one is compression of the support structure under the loading condition, and the other is that the position of the support structure under the loading condition is changed due to elastic deformation of the electrode layer or the electrolyte layer, so that the sensor response process is changed.
Further, the support structure is characterized in that the primary and secondary of the two-part blocking effect are converted to different degrees due to the performance difference between materials, so that the performance of the sensor is affected.
Further, the electrode layer includes an upper electrode and a lower electrode;
the placing of the support structure between the electrode layer and the electrolyte layer of the ion capacitive flexible pressure sensor comprises:
placing the support structure between an upper electrode and an electrolyte layer; and/or the number of the groups of groups,
the support structure is placed between the lower electrode and the electrolyte layer.
Further, the influencing factors include the existence of the supporting structure, the material of the supporting structure and the thickness of the supporting structure.
The invention adopts another technical scheme that:
a performance optimization device of an ion capacitive flexible pressure sensor based on support structure regulation, comprising:
at least one processor;
at least one memory for storing at least one program;
the at least one program, when executed by the at least one processor, causes the at least one processor to implement the method described above.
The invention adopts another technical scheme that:
a computer readable storage medium, in which a processor executable program is stored, which when executed by a processor is adapted to carry out the method as described above.
The beneficial effects of the invention are as follows: according to the invention, through regulating and controlling the supporting structure for assisting in sensor packaging, the performance of the ion capacitive flexible pressure sensor under various supporting conditions is analyzed and discussed, the influence modes of various influencing factors on the sensor performance are summarized, the back reasons are revealed, and then the optimization strategy of the supporting structure under various application scenes or sensor performance requirements is summarized.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the following description is made with reference to the accompanying drawings of the embodiments of the present invention or the related technical solutions in the prior art, and it should be understood that the drawings in the following description are only for convenience and clarity of describing some embodiments in the technical solutions of the present invention, and other drawings may be obtained according to these drawings without the need of inventive labor for those skilled in the art.
FIG. 1 is a schematic diagram of two structures of an ion capacitive flexible pressure sensor based on support structure regulation in an embodiment of the present invention; wherein FIG. 1 (a) is an unsupported structure and FIG. 1 (b) is a supported structure;
FIG. 2 is a graph showing capacitance-pressure test data and sensitivity statistics of an ion capacitive flexible pressure sensor under unsupported, soft & thin supported, hard & thin supported conditions in accordance with an embodiment of the present invention;
FIG. 3 is a graph of normalized capacitance-pressure data and mathematical formula fit for an ion capacitive flexible pressure sensor with no support, soft & thin support, hard & thin support in an embodiment of the present invention;
FIG. 4 is capacitance-pressure test data and sensitivity statistics of an ion capacitive flexible pressure sensor under hard & thin support, hard & thick support, hard & ultra-thick support conditions in an embodiment of the invention;
FIG. 5 is a graph of normalized capacitance-pressure data and mathematical formula fit for an ion capacitive flexible pressure sensor under hard & thin support, hard & thick support, hard & ultra-thick support conditions in an embodiment of the present invention;
FIG. 6 is a flow chart of steps of a method for optimizing performance of an ion capacitive flexible pressure sensor based on support structure regulation in an embodiment of the invention.
Detailed Description
Embodiments of the present invention are described in detail below, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to like or similar elements or elements having like or similar functions throughout. The embodiments described below by referring to the drawings are illustrative only and are not to be construed as limiting the invention. The step numbers in the following embodiments are set for convenience of illustration only, and the order between the steps is not limited in any way, and the execution order of the steps in the embodiments may be adaptively adjusted according to the understanding of those skilled in the art.
In the description of the present invention, it should be understood that references to orientation descriptions such as upper, lower, front, rear, left, right, etc. are based on the orientation or positional relationship shown in the drawings, are merely for convenience of description of the present invention and to simplify the description, and do not indicate or imply that the apparatus or elements referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus should not be construed as limiting the present invention.
In the description of the present invention, a number means one or more, a number means two or more, and greater than, less than, exceeding, etc. are understood to not include the present number, and above, below, within, etc. are understood to include the present number. The description of the first and second is for the purpose of distinguishing between technical features only and should not be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated or implicitly indicating the precedence of the technical features indicated.
In the description of the present invention, unless explicitly defined otherwise, terms such as arrangement, installation, connection, etc. should be construed broadly and the specific meaning of the terms in the present invention can be reasonably determined by a person skilled in the art in combination with the specific contents of the technical scheme.
As shown in fig. 6, the embodiment provides a performance optimization method of an ion capacitive flexible pressure sensor based on support structure regulation, which includes the following steps:
s1, placing a supporting structure between an electrode layer and an electrolyte layer of an ion capacitance type flexible pressure sensor;
s2, controlling influencing factors of the supporting structure, performing parallel experimental tests, and counting capacitance-pressure data under each supporting condition;
s3, calculating and obtaining the sensitivity, the linearity and the bearing range of the sensor under the condition of each supporting structure according to the counted capacitance-pressure data;
s4, analyzing internal reasons of influence of each support structure on each performance of the sensor sensitivity, linearity and pressure-bearing range based on influence of the support structure on an initial capacitance value of the sensor and a blocking mode of a loading process;
and S5, summarizing to obtain a performance optimization strategy of the ion capacitive flexible pressure sensor based on the regulation and control of the supporting structure.
According to the method, the supporting structure for assisting in sensor packaging is regulated and controlled, the performance of the ion capacitive flexible pressure sensor under various supporting conditions is analyzed and discussed, the influence modes of the existence of the support, the supporting materials and the supporting thickness on the sensor performance are summarized, the back reasons are revealed, and then the optimization strategy of the supporting structure under various application scenes or the sensor performance requirements is summarized.
Embodiment 1: as shown in fig. 1, the sensor body according to this embodiment is a 800-220 mesh random rough surface capacitive pressure sensor, in which the bottom surface of the upper electrode layer is a 800 mesh random rough surface, the top surface of the electrolyte layer is a 220 mesh random rough surface, and the remaining surfaces are all planar surfaces.
The embodiment provides a performance optimization method of an ion capacitance type flexible pressure sensor based on support structure regulation, which comprises the following steps:
s101, setting 5 support modes, namely, unsupported (thickness 0 μm), soft & thin support (dust-free paper, thickness 103 μm), hard & thin support (A4 paper, thickness 102 μm), hard & thick support (A4 paper, thickness 203 μm) and hard & super thick support (A4 paper, thickness 409 μm), wherein 1 support structure is arranged, and 4 support structures are arranged;
s102, cutting an upper electrode layer and a lower electrode layer into a rectangle with the diameter of 20mm, cutting a supporting structure into a rectangle ring shape with the outer diameter of 20mm and the inner diameter of 15mm, and placing the supporting structure between the upper electrode layer and the electrolyte layer;
s103, keeping other factors of the sensor consistent, carrying out parallel experimental tests on the five supporting conditions in the step S101, and counting capacitance-pressure data under each supporting condition, wherein the data points are shown in fig. 2 and 4;
s104, no support and softness&Thin support, hard&Sensitivity of 0-8.9 kpa, 8.9-88.9 kpa, 88.9-288.9 kpa pressure section under thin support condition is counted and marked as S 1 、S 2 、S 3 As shown in fig. 2. Under the condition of no support, S 1 ＝0.66kpa -1 ，S 2 ＝0.17kpa -1 ，S 3 ＝0.05kpa -1 Sensitivity decreases with increasing pressure and remains at a lower level at all times; in the soft state&Under the condition of thin support, S 1 ＝39.3kpa -1 ，S 2 ＝23.4kpa -1 ，S 3 ＝14.6kpa -1 Sensitivity decreases with increasing pressure, but remains at a higher level at all times; in the hard state&Under the condition of thin support, S 1 ＝31.0kpa -1 ，S 2 ＝37.5kpa -1 ，S 3 ＝38.6kpa -1 The sensitivity is relatively stable and always kept at a high level;
s105, no support and softness&Thin support, hard&The linearity of the pressure sections of 0 to 8.9kpa, 8.9 to 88.9kpa and 88.9 to 288.9kpa under the thin supporting condition is counted and respectively marked as R 1 2 、R 2 2 、R 3 2 . Under the condition of no support, R 1 2 ＝0.998、R 2 2 ＝0.978、R 3 2 =0.971, sensor linearity gradually decreases with increasing pressure; in the soft state&Under the condition of thin support, R 1 2 ＝0.979、R 2 2 ＝0.989、R 3 2 =0.990, the sensor linearity is smoother and remains always at a higher level; in the hard state&Under the condition of thin support, R 1 2 ＝0.959、R 2 2 ＝0.952、R 3 2 =0.998, with lower linearity in the pressure section of 0-88.9 kpa, and extremely high linearity in the pressure section of 88.9-288.9 kpa;
s106, to no support and soft&Thin support, hard&The capacitance-pressure curve under the thin support condition is normalized to obtain data points as shown in fig. 3, and the corresponding 3 groups of data points are respectively available
ΔC(x)/C 1 The =erf (α·x) formula achieves a high quality fit, fitting the correlation coefficient R 2 0.993, 0.996, 0.997, respectively;
s107, observing the differences among the curves in FIG. 3 shows that the change rules of the sensor response process under different supporting conditions show significant differences. Under the unsupported condition, the sensor does not change the contact state, the contact area rapidly increases along with the increase of the pressure in the low pressure range, and the speed is the fastest of the three, as shown by an orange curve in fig. 3. The low linearity and low sensitivity of this type of sensor in the global range is caused by the combined effect of the rapid increase of the contact area and the higher initial capacitance. Under soft and thin support conditions, the sensor can change the contact state under extremely low pressure, and the contact area is increased along with the increase of the pressure at a certain speed increase, wherein the speed increase is faster among the three, as shown by a purple curve in fig. 3. The combined effect of the low initial capacitance and the slight impediment of the thin support allows for a sensor of this type with high sensitivity and high linearity. Under the hard and thin supporting conditions, the sensor can change the contact state under higher pressure, and the acceleration of the contact area is the slowest of the three, as shown by a green curve in fig. 3. The sensor has extremely poor linearity in a low-voltage section due to the comprehensive influence of the extremely low initial capacitance and the blocking effect of the hard support, and has higher sensitivity and highest linearity in a global range;
s108, in hard&Thin support, hard&Thick support and hard&The statistics of capacitance-pressure experimental data under ultra-thick support conditions are shown in fig. 4. Hard&Under the condition of thin support, the sensor shows higher sensitivity and linearity in the pressure section of 0-53.3 kpa, and S=38.1 kpa -1 ，R 2 =0.994; hard&Under the condition of thick support, the capacitance of the sensor in the pressure section of 0-355.6 kpa does not obviously rise along with the increase of the pressure, the sensor does not show a significant rising trend until in the pressure section of 355.6-933.3 kpa, and the sensor has higher sensitivity and linearity in the pressure section: s=19.5 kpa -1 ，R 2 =0.994; hard&Under the ultra-thick supporting condition, the capacitance of the sensor in the pressure section of 0-533.3 kpa still does not obviously rise along with the pressure increase, and the sensor does not show small rise until the pressure section of 533.3-933.3 kpa, and the sensitivity and the linearity of the sensor are kept at a lower level at the moment: s=2.47 kpa -1 ，R 2 =0.974. While increasing the thickness of the support structure can reduce the initial capacitance value of the sensor to some extent, the loading process of the sensor is also greatly hindered. The corresponding pressure when the capacitance reaches 99.9% of the limit capacitance value is taken as critical pressure, and the capacitor is hard&Thin support, hard&Thick support and hard&The critical pressure of the sensor under the ultra-thick supporting condition is about 0.93Mpa, 2.22Mpa and 4.44Mpa respectively, and the increase of the thickness of the supporting structure has a remarkable improving effect on the critical pressure of the sensor;
s109, hard to hard&Thin support, hard&Thick support and hard&Normalization of capacitance-pressure curve under ultra-thick support conditions as shown in FIG. 5 for data points, only hard&The corresponding curve of the thin support can be delta C (x)/C 1 =erf (α·x) to achieve high quality fitting, fitting correlation coefficient R 2 0.997;
s110, through the steps S101-S109, a performance optimization strategy of the ion capacitance type flexible pressure sensor based on support structure regulation can be obtained, and the performance optimization strategy is summarized as follows:
1) Under the conditions of no support and soft and thin support, the sensitivity of the sensor is obviously reduced along with the increase of the pressure in a lower pressure section; under the hard and thin supporting conditions, the sensor always maintains high and stable sensitivity in a wider pressure section due to the obstruction of the response process by the hard support.
2) The soft and thin support can effectively reduce the initial capacitance value of the sensor and provide a certain obstruction to the loading process, and under the combined action of the soft and thin support, the sensor under the soft and thin support condition shows higher global sensitivity and linearity than under the non-support condition.
3) The stiff & thin support provides a greater impediment to the loading process while effectively reducing the initial capacitance of the sensor, resulting in a greater pressure required to transition the sensor from the non-contact to the contact state, and thus a lower sensitivity in the low pressure section, a higher sensitivity in the wider pressure section, and a greater critical pressure. While the sensor may exhibit a higher sensitivity over a wider range under hard & thin support conditions, its low sensitivity and low linearity in the low pressure section would limit its application in the low pressure field.
4) The supporting structure with proper thickness (such as 102 μm) can effectively reduce the initial capacitance value of the sensor and cause a certain obstruction to the loading process of the sensor, and at this time, the supporting structure can effectively improve the sensitivity, linearity and pressure bearing range of the sensor.
5) Support structures of excessive thickness (e.g., 203 μm, 409 μm) can still effectively reduce the initial capacitance of the sensor, but their resistance to the loading process of the sensor will be greatly increased, and the pressure-bearing range of the sensor will be widened, but they have very low sensitivity in a rather wide low pressure range, and the maximum sensitivity is also significantly lower than that of a suitable thickness support sensor. Therefore, the thickness supporting structure has obvious improvement on the performance of the ultrahigh pressure section of the sensor, but has no positive effect on the overall improvement on the performance of the full pressure bearing range, so that the thickness supporting structure is only suitable for the specific ultrahigh pressure application field.
In summary, according to the invention, under the condition that the structural design, the materials and the preparation process of the sensor are the same, the sensitivity of the sensor can be improved by tens to hundreds times by adjusting and controlling the existence, the materials, the thickness and the like of the supporting structure for auxiliary packaging, and the linearity interval and the pressure-bearing range of the sensor can be effectively improved. Meanwhile, the influence of the supporting structures on the initial capacitance value of the sensor and the blocking mode of the loading process is analyzed, the intrinsic reasons of the influence of each supporting structure on the sensitivity, the linearity, the bearing range and other performances of the sensor are summarized, and then the performance optimization method of any ion capacitance type flexible pressure sensor based on the regulation and control of the supporting structures can be obtained.
The embodiment also provides a performance optimization device of the ion capacitance type flexible pressure sensor based on support structure regulation and control, which comprises:
at least one processor;
at least one memory for storing at least one program;
the at least one program, when executed by the at least one processor, causes the at least one processor to implement the method illustrated in fig. 6.
The performance optimization device of the ion capacitive flexible pressure sensor based on the support structure regulation can execute the performance optimization method of the ion capacitive flexible pressure sensor based on the support structure regulation, can execute any combination implementation steps of the method embodiments, and has corresponding functions and beneficial effects.
The present application also discloses a computer program product or a computer program comprising computer instructions stored in a computer readable storage medium. The computer instructions may be read from a computer-readable storage medium by a processor of a computer device, and executed by the processor, to cause the computer device to perform the method shown in fig. 6.
The embodiment also provides a storage medium which stores instructions or programs capable of executing the performance optimization method of the ion capacitive flexible pressure sensor based on the support structure regulation and control provided by the embodiment of the method, and when the instructions or programs are operated, the instructions or programs can execute any combination implementation steps of the embodiment of the method, and the method has the corresponding functions and beneficial effects.
In some alternative embodiments, the functions/acts noted in the block diagrams may occur out of the order noted in the operational illustrations. For example, two blocks shown in succession may in fact be executed substantially concurrently or the blocks may sometimes be executed in the reverse order, depending upon the functionality/acts involved. Furthermore, the embodiments presented and described in the flowcharts of the present invention are provided by way of example in order to provide a more thorough understanding of the technology. The disclosed methods are not limited to the operations and logic flows presented herein. Alternative embodiments are contemplated in which the order of various operations is changed, and in which sub-operations described as part of a larger operation are performed independently.
Furthermore, while the invention is described in the context of functional modules, it should be appreciated that, unless otherwise indicated, one or more of the described functions and/or features may be integrated in a single physical device and/or software module or one or more functions and/or features may be implemented in separate physical devices or software modules. It will also be appreciated that a detailed discussion of the actual implementation of each module is not necessary to an understanding of the present invention. Rather, the actual implementation of the various functional modules in the apparatus disclosed herein will be apparent to those skilled in the art from consideration of their attributes, functions and internal relationships. Accordingly, one of ordinary skill in the art can implement the invention as set forth in the claims without undue experimentation. It is also to be understood that the specific concepts disclosed are merely illustrative and are not intended to be limiting upon the scope of the invention, which is to be defined in the appended claims and their full scope of equivalents.
The functions, if implemented in the form of software functional units and sold or used as a stand-alone product, may be stored in a computer-readable storage medium. Based on this understanding, the technical solution of the present invention may be embodied essentially or in a part contributing to the prior art or in a part of the technical solution, in the form of a software product stored in a storage medium, comprising several instructions for causing a computer device (which may be a personal computer, a server, a network device, etc.) to perform all or part of the steps of the method according to the embodiments of the present invention. And the aforementioned storage medium includes: a U-disk, a removable hard disk, a Read-Only Memory (ROM), a random access Memory (RAM, random Access Memory), a magnetic disk, or an optical disk, or other various media capable of storing program codes.
Logic and/or steps represented in the flowcharts or otherwise described herein, e.g., a ordered listing of executable instructions for implementing logical functions, can be embodied in any computer-readable medium for use by or in connection with an instruction execution system, apparatus, or device, such as a computer-based system, processor-containing system, or other system that can fetch the instructions from the instruction execution system, apparatus, or device and execute the instructions. For the purposes of this description, a "computer-readable medium" can be any means that can contain, store, communicate, propagate, or transport the program for use by or in connection with the instruction execution system, apparatus, or device.
More specific examples (a non-exhaustive list) of the computer-readable medium would include the following: an electrical connection (electronic device) having one or more wires, a portable computer diskette (magnetic device), a Random Access Memory (RAM), a read-only memory (ROM), an erasable programmable read-only memory (EPROM or flash memory), an optical fiber device, and a portable compact disc read-only memory (CDROM). In addition, the computer readable medium may even be paper or other suitable medium on which the program is printed, as the program may be electronically captured, via, for instance, optical scanning of the paper or other medium, then compiled, interpreted or otherwise processed in a suitable manner, if necessary, and then stored in a computer memory.
It is to be understood that portions of the present invention may be implemented in hardware, software, firmware, or a combination thereof. In the above-described embodiments, the various steps or methods may be implemented in software or firmware stored in a memory and executed by a suitable instruction execution system. For example, if implemented in hardware, as in another embodiment, may be implemented using any one or combination of the following techniques, as is well known in the art: discrete logic circuits having logic gates for implementing logic functions on data signals, application specific integrated circuits having suitable combinational logic gates, programmable Gate Arrays (PGAs), field Programmable Gate Arrays (FPGAs), and the like.
In the foregoing description of the present specification, reference has been made to the terms "one embodiment/example", "another embodiment/example", "certain embodiments/examples", and the like, means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, schematic representations of the above terms do not necessarily refer to the same embodiments or examples. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
While embodiments of the present invention have been shown and described, it will be understood by those of ordinary skill in the art that: many changes, modifications, substitutions and variations may be made to the embodiments without departing from the spirit and principles of the invention, the scope of which is defined by the claims and their equivalents.
While the preferred embodiment of the present invention has been described in detail, the present invention is not limited to the above embodiments, and various equivalent modifications and substitutions can be made by those skilled in the art without departing from the spirit of the present invention, and these equivalent modifications and substitutions are intended to be included in the scope of the present invention as defined in the appended claims.
Claims (8)
1. The performance optimization method of the ion capacitive flexible pressure sensor based on support structure regulation is characterized by comprising the following steps of:
placing a support structure between an electrode layer and an electrolyte layer of an ion capacitive flexible pressure sensor;
controlling influencing factors of the supporting structure, performing parallel experimental tests, and counting capacitance-pressure data under each supporting condition; the influence factors comprise the existence of the supporting structure, the material of the supporting structure and the thickness of the supporting structure;
according to the counted capacitance-pressure data, calculating to obtain the sensitivity, linearity and bearing range of the sensor under the condition of each supporting structure;
analyzing the intrinsic reasons of the influence of each support structure on each performance of the sensor sensitivity, linearity and pressure-bearing range based on the influence of the support structure on the sensor initial capacitance value and the blocking mode of the loading process;
summarizing to obtain a performance optimization strategy of the ion capacitive flexible pressure sensor based on the regulation and control of the supporting structure;
the electrode layer comprises an upper electrode and a lower electrode; the support structure is ring-shaped;
the placing of the support structure between the electrode layer and the electrolyte layer of the ion capacitive flexible pressure sensor comprises:
placing the support structure between an upper electrode and an electrolyte layer; and/or the number of the groups of groups,
the support structure is placed between the lower electrode and the electrolyte layer.
2. The method for optimizing the performance of the ion capacitive flexible pressure sensor based on the support structure regulation and control of claim 1, wherein the thickness of the support structure is 0.1-1 times of the thickness of the electrode layer; or alternatively, the first and second heat exchangers may be,
the thickness of the supporting structure is 0.1-1 times of the thickness of the electrolyte layer.
3. The method for optimizing the performance of the ion capacitive flexible pressure sensor based on the support structure regulation and control of claim 1, wherein the shape of the support structure in the length-width direction is kept corresponding to the shape of the electrode layer.
4. The method of claim 1, wherein the support structure is used to provide an initial distance between the sensor electrode and the electrolyte layer and to block the loading process of the sensor.
5. The method for optimizing performance of an ion capacitive flexible pressure sensor based on support structure regulation according to claim 4, wherein the barrier effect of the support structure on the sensor loading process is composed of two parts, one is compression of the support structure under the loading condition, and the other is that the position of the support structure under the loading condition is changed due to elastic deformation of an electrode layer or an electrolyte layer, so that the sensor response process is changed.
6. The method for optimizing the performance of the ion capacitive flexible pressure sensor based on the support structure regulation and control of claim 5, wherein the support structure is characterized in that the two parts of the primary and secondary blocking effects are converted to different degrees due to the performance difference among materials, so that the performance of the sensor is influenced.
7. The utility model provides a performance optimization device of ion capacitive flexible pressure sensor based on bearing structure regulation and control which characterized in that includes:
at least one processor;
at least one memory for storing at least one program;
the at least one program, when executed by the at least one processor, causes the at least one processor to implement the method of any one of claims 1-6.
8. A computer readable storage medium, in which a processor executable program is stored, characterized in that the processor executable program is for performing the method according to any of claims 1-6 when being executed by a processor.
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