CN114894132A - Semiconductor wafer thickness detection control system - Google Patents
Semiconductor wafer thickness detection control system Download PDFInfo
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- CN114894132A CN114894132A CN202210495502.0A CN202210495502A CN114894132A CN 114894132 A CN114894132 A CN 114894132A CN 202210495502 A CN202210495502 A CN 202210495502A CN 114894132 A CN114894132 A CN 114894132A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B17/00—Measuring arrangements characterised by the use of infrasonic, sonic or ultrasonic vibrations
- G01B17/02—Measuring arrangements characterised by the use of infrasonic, sonic or ultrasonic vibrations for measuring thickness
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B15/00—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons
- G01B15/02—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons for measuring thickness
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P90/00—Enabling technologies with a potential contribution to greenhouse gas [GHG] emissions mitigation
- Y02P90/02—Total factory control, e.g. smart factories, flexible manufacturing systems [FMS] or integrated manufacturing systems [IMS]
Abstract
The invention relates to the technical field of semiconductors, in particular to a semiconductor wafer thickness detection control system, which comprises a data acquisition unit, a central processing unit and a classification processing unit, wherein: the data acquisition unit is used for measuring the semiconductor wafer; according to the invention, multiple analysis and measurement are carried out on the semiconductor wafer through the data acquisition unit, error adjustment processing is carried out on the data, then the data acquisition is carried out, the acquired data is transmitted to the central processing unit, data conversion is carried out on the data, the data is compared again, the compared data is adjusted, finally the data is stored, the stored data is transmitted to the classification processing unit, the data is displayed, the semiconductor wafers are classified according to different requirements, the thickness of the over-thick semiconductor wafer can be adjusted, and finally classification output is carried out, so that the accuracy of measurement is improved after multiple detections, and classification, transportation and discharge are convenient.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a semiconductor wafer thickness detection control system.
Background
Semiconductors are used in the fields of integrated circuits, consumer electronics, communication systems, photovoltaic power generation, lighting, high-power conversion, etc., for example, diodes are devices fabricated using semiconductors. The importance of semiconductors is enormous, both from a technological and economic point of view. Most electronic products, such as computers, mobile phones or digital recorders, have core units closely related to semiconductors;
the patent application numbers are: CN111721240A, a film thickness humidity detection system, which uses a coaxial circuit element to replace a waveguide device to solve the conversion between a coaxial signal and a resonant cavity mode; the method specifically comprises the following modules: the device comprises an acquisition module, a storage module and an operation module; the acquisition module comprises a switch part, a detector, an isolator and a conversion matcher; the conversion matcher is used for realizing coaxial rotation of the waveguide and the operation of coaxial rotation of the waveguide; the device also comprises a rack device for bearing the components. This system has the following advantages: 1. compared with the traditional system for measuring the humidity and thickness of the film, the system is more environment-friendly. 2. The humidity and thickness of the film can be measured simultaneously. 3. Compared with the method for measuring and calculating the film humidity and thickness by using frequency sweeping, the method has the advantages of lower cost and high measuring speed. 4. The thickness detection control system has good test sensitivity, stability, reliability, maintainability, environmental adaptability and higher anti-interference capability, and can meet the requirements of industrial production, but when the thickness detection control system is used, the detection and the calculation are difficult to be carried out for multiple times, so that the measurement error is caused, and the use by workers is inconvenient.
In summary, the development of a semiconductor wafer thickness detection control system is still a critical problem to be solved urgently in the semiconductor field.
Disclosure of Invention
In view of the above-mentioned disadvantages of the prior art, the present invention provides a semiconductor wafer thickness detection control system, which performs multiple analysis and measurement on a semiconductor wafer through a data acquisition unit, performs error adjustment processing on the data, acquires data, transmits the acquired data to a central processing unit, performs data conversion on the data, compares the data again, adjusts the compared data, stores the data, transmits the stored data to a classification processing unit, displays the data, classifies the semiconductor wafers according to different requirements, adjusts the thickness of the semiconductor wafers with excessive thickness, and finally performs classification output, thereby achieving multiple detections, improving the accuracy of the measurements, and facilitating the classification, transportation and discharge.
In order to achieve the purpose, the invention provides the following technical scheme:
the invention provides a semiconductor wafer thickness detection control system, which comprises a data acquisition unit, a central processing unit and a classification processing unit, wherein:
the data acquisition unit is used for measuring the semiconductor wafer and acquiring measured data;
the central processing unit is used for receiving the data transmitted by the structural data acquisition unit, analyzing the tested semiconductor wafer based on the received information, comparing and adjusting the data, and then collecting and storing the data, and is connected with the data acquisition unit;
the classification processing unit is used for receiving the information transmitted by the data acquisition unit, performing classification data statistics on the semiconductor wafer based on the received information, adjusting the thickness of the semiconductor wafer, and performing classification conveying, and is connected with the central processing unit.
The invention is further configured to: the data acquisition unit includes ultrasonic detection analysis module, microwave thickness detection module, error processing module, data adjustment module, signal amplification module, data acquisition module and first communication module, wherein:
the ultrasonic detection analysis module and the microwave thickness detection module respectively sense the thickness of the semiconductor wafer through ultrasonic signals and micro-acoustic signals.
The invention is further configured to: the central processing unit comprises an analysis filtering module, a data conversion module, a first thickness calculation module, a second thickness calculation module, a comparison adjustment module, a data integration module, a data storage module and a second communication module, wherein:
the analysis filtering module is used for analyzing the data transmitted by the data acquisition unit and filtering redundant signals;
the data conversion module is used for receiving the signals transmitted by the analysis and filtration module and converting the signals into digital scales, and the data conversion module is connected with the analysis and filtration module.
The invention is further configured to: the classification processing unit comprises a data display module, a thickness comparison module, a thickness classification module, a thickness adjustment module and a classification conveying module, wherein:
the data display module is used for displaying the signal transmitted by the second communication module;
the thickness comparison module is used for receiving the signals transmitted by the data display module and comparing the semiconductor wafers with different thicknesses, and is connected with the data display module.
The invention is further configured to: the error processing module is used for receiving the signals transmitted by the ultrasonic detection analysis module and the microwave thickness detection module and comparing the two groups of signals, and the error processing module is respectively connected with the ultrasonic detection analysis module and the microwave thickness detection module;
the data adjusting module is used for receiving the signals transmitted by the error processing module and adjusting the data transmitted by the error processing module, and the data adjusting module is connected with the error processing module.
The invention is further configured to: the signal amplification module is used for receiving the signal transmitted by the data adjustment module and amplifying the signal transmitted by the data adjustment module, and the signal amplification module is connected with the data adjustment module;
the data acquisition module is used for receiving the signals transmitted by the signal amplification module, differentially acquiring the signals transmitted by the signal amplification module, transmitting the acquired signals to the first communication module, the signal amplification module is connected with the data acquisition module, and the data acquisition module is connected with the first communication module.
The invention is further configured to: the first thickness calculation module and the second thickness calculation module are used for receiving signals transmitted by the data conversion module and analyzing and calculating the transmitted data, and the first thickness calculation module and the second thickness calculation module are respectively connected with the data conversion module;
the comparison and adjustment module is used for receiving the data transmitted by the first thickness calculation module and the second thickness calculation module, making corresponding comparison and adjusting the transmitted data, and is respectively connected with the first thickness calculation module and the second thickness calculation module.
The invention is further configured to: the data integration module is used for receiving the data transmitted by the comparison adjustment module, sorting and collecting a plurality of groups of transmission data, and is connected with the comparison adjustment module;
the data storage module is used for receiving signals transmitted by the data integration module and storing data transmitted by the data integration module, and the data storage module is connected with the data integration module;
and the second communication module is used for receiving the signals transmitted by the data storage module and transmitting the signals to the classification processing unit.
The invention is further configured to: the thickness classification module and the thickness adjustment module are respectively used for receiving signals transmitted by the data display module, the thickness classification module is used for classifying and placing semiconductor wafers with different thicknesses, the thickness adjustment module is used for adjusting the thickness of a thicker semiconductor wafer, and the thickness classification module and the thickness adjustment module are connected with the thickness comparison module;
the classifying and conveying module is used for receiving signals transmitted by the thickness classifying module and the thickness adjusting module and conveying different semiconductor wafers, and the classifying and conveying module is connected with the thickness classifying module and the thickness adjusting module.
Advantageous effects
Compared with the known public technology, the technical scheme provided by the invention has the following beneficial effects:
carry out multiple analysis and measurement to semiconductor wafer through the data acquisition unit, and carry out error adjustment to data and handle, gather data again, transmit the data of gathering to central processing unit in, carry out data conversion to data, and compare data once more, and adjust the data of comparing, store data at last, and will store data and carry to the classification processing unit in, show data, and classify semiconductor wafer according to different needs, and can carry out the adjustment of thickness with the semiconductor wafer of excessive thickness, carry out categorised output at last, thereby reach and detect many times, improve measuring accuracy, and conveniently carry out the categorised transport and discharge.
Drawings
FIG. 1 is a system diagram of a semiconductor wafer thickness inspection control system according to the present invention;
FIG. 2 is a schematic diagram of a data collection unit of a semiconductor wafer thickness inspection control system according to the present invention;
FIG. 3 is a schematic diagram of a CPU of the semiconductor wafer thickness inspection control system according to the present invention;
FIG. 4 is a schematic view of a semiconductor wafer thickness inspection control system sorting unit according to the present invention.
The reference numbers in the figures illustrate:
1. a data acquisition unit; 101. an ultrasonic detection analysis module; 102. a microwave thickness detection module; 103. an error processing module; 104. a data adjustment module; 105. a signal amplification module; 106. a data acquisition module; 107. a first communication module; 2. a central processing unit; 201. an analysis filtering module; 202. a data conversion module; 203. a first thickness calculation module; 204. a second thickness calculation module; 205. a comparison and adjustment module; 206. a data integration module; 207. a data storage module; 208. a second communication module; 3. a classification processing unit; 301. a data display module; 302. a thickness comparison module; 303. a thickness classification module; 304. a thickness adjustment module; 305. and a sorting and conveying module.
Detailed Description
The technical solution in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention; it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all embodiments, and all other embodiments obtained by those skilled in the art without any inventive work are within the scope of the present invention.
In the description of the present invention, it should be noted that the terms "upper", "lower", "inner", "outer", "top/bottom", and the like indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience of description and simplification of description, but do not indicate or imply that the referred device or element must have a specific orientation, be constructed in a specific orientation, and be operated, and thus should not be construed as limiting the present invention. Furthermore, the terms "first" and "second" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "disposed," "sleeved/connected," "connected," and the like are to be construed broadly, e.g., "connected," which may be fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; the two components can be directly connected or indirectly connected through an intermediate medium, and the two components can be communicated with each other; the specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
Example (b):
referring to fig. 1-4, a semiconductor wafer thickness detection control system includes a data acquisition unit 1, a central processing unit 2 and a classification processing unit 3, wherein: the data acquisition unit 1 is used for measuring the semiconductor wafer and acquiring measured data; the central processing unit 2 is used for receiving the data transmitted by the structural data acquisition unit 1, analyzing the tested semiconductor wafer based on the received information, comparing and adjusting the data, and collecting and storing the data, and the central processing unit 2 is connected with the data acquisition unit 1;
the classification processing unit 3 is used for receiving the information transmitted by the data acquisition unit 1, performing classification data statistics on the semiconductor wafer based on the received information, adjusting the thickness of the semiconductor wafer, and performing classification conveying, and the classification processing unit 3 is connected with the central processing unit 2.
In this embodiment, multiple analysis and measurement are performed on the semiconductor wafer through the data acquisition unit 1, error adjustment processing is performed on the data, data acquisition is performed again, the acquired data are transmitted to the central processing unit 2, data conversion is performed on the data, the data are compared again, the compared data are adjusted, the data are stored finally, the stored data are conveyed to the classification processing unit 3, the data are displayed, the semiconductor wafer is classified according to different requirements, the thickness of the excessively thick semiconductor wafer can be adjusted, and finally classification output is performed, so that multiple detection is performed, the accuracy of measurement is improved, and classification conveying and discharging are facilitated.
In the present invention, the data acquisition unit 1 includes an ultrasonic detection and analysis module 101, a microwave thickness detection module 102, an error processing module 103, a data adjustment module 104, a signal amplification module 105, a data acquisition module 106, and a first communication module 107, wherein: the ultrasonic detection analysis module 101 and the microwave thickness detection module 102 respectively sense the thickness of the semiconductor wafer through ultrasonic signals and micro-acoustic signals, the error processing module 103 is used for receiving signals transmitted by the ultrasonic detection analysis module 101 and the microwave thickness detection module 102 and comparing the two groups of signals, and the error processing module 103 is respectively connected with the ultrasonic detection analysis module 101 and the microwave thickness detection module 102; the data adjusting module 104 is configured to receive a signal transmitted by the error processing module 103 and adjust data transmitted by the error processing module 103, the data adjusting module 104 is connected to the error processing module 103, the signal amplifying module 105 is configured to receive a signal transmitted by the data adjusting module 104 and amplify a signal transmitted by the data adjusting module 104, and the signal amplifying module 105 is connected to the data adjusting module 104; the data acquisition module 106 is configured to receive the signal transmitted by the signal amplification module 105, perform differential acquisition on the signal transmitted by the signal amplification module 105, and transmit the acquired signal to the first communication module 107, the signal amplification module 105 is connected to the data acquisition module 106, and the data acquisition module 106 is connected to the first communication module 107.
In this embodiment, the thickness of the semiconductor wafer is measured by the ultrasonic detection and analysis module 101 and the microwave thickness detection module 102, the data measured by the ultrasonic detection and analysis module 101 and the microwave thickness detection module 102 are compared by the error processing module 103, when there is an error, the compared data are adjusted by the data adjustment module 104, the signal transmitted by the data adjustment module 104 is amplified by the signal amplification module 105, the data are collected by the data collection module 106, and finally the collected data are transmitted to the central processing unit 2 by the first communication module 107.
In the present invention, the central processing unit 2 includes an analysis filtering module 201, a data conversion module 202, a first thickness calculating module 203, a second thickness calculating module 204, a comparison adjusting module 205, a data integration module 206, a data storage module 207 and a second communication module 208, wherein: the analysis filtering module 201 is used for analyzing the data transmitted by the data acquisition unit 1 and filtering redundant signals; the data conversion module 202 is used for receiving the signals transmitted by the analysis and filtration module 201 and converting the signals into digital scales, the data conversion module 202 is connected with the analysis and filtration module 201, the first thickness calculation module 203 and the second thickness calculation module 204 are used for receiving the signals transmitted by the data conversion module 202 and analyzing and calculating the transmitted data, and the first thickness calculation module 203 and the second thickness calculation module 204 are respectively connected with the data conversion module 202; the comparison adjusting module 205 is configured to receive data transmitted by the first thickness calculating module 203 and the second thickness calculating module 204, perform corresponding comparison, and adjust the transmitted data, the comparison adjusting module 205 is connected to the first thickness calculating module 203 and the second thickness calculating module 204, the data integrating module 206 is configured to receive data transmitted by the comparison adjusting module 205, arrange and collect multiple sets of transmitted data, and the data integrating module 206 is connected to the comparison adjusting module 205; the data storage module 207 is configured to receive the signal transmitted by the data integration module 206 and store the data transmitted by the data integration module 206, and the data storage module 207 is connected to the data integration module 206; the second communication module 208 is configured to receive the signal transmitted by the data storage module 207 and transmit the signal to the classification processing unit 3.
In this example, the data transmitted by the first communication module 107 is analyzed by the analysis and filtering module 201, the data unrelated to the thickness of the semiconductor wafer is filtered, the signal transmitted by the analysis and filtering module 201 is converted into a digital scale by the data conversion module 202, the data is received by the first thickness calculation module 203 and the second thickness calculation module 204, the comparison is performed by the comparison and adjustment module 205, the transmitted sets of the transmission data are collated and collected by the data integration module 206, the data is centrally stored by the data storage module 207, and the data is finally transmitted to the classification unit 3 by the second communication module 208.
In the present invention, the classification processing unit 3 includes a data display module 301, a thickness comparison module 302, a thickness classification module 303, a thickness adjustment module 304, and a classification conveying module 305, wherein: the data display module 301 is configured to display the signal transmitted by the second communication module 208; the thickness comparison module 302 is used for receiving signals transmitted by the data display module 301 and comparing semiconductor wafers with different thicknesses, the thickness comparison module 302 is connected with the data display module 301, the thickness classification module 303 and the thickness adjustment module 304 are respectively used for receiving the signals transmitted by the data display module 301, the thickness classification module 303 is used for classifying and placing the semiconductor wafers with different thicknesses, the thickness adjustment module 304 is used for adjusting the thickness of the thicker semiconductor wafer, the thickness classification module 303 and the thickness adjustment module 304 are connected with the thickness comparison module 302, the classification conveying module 305 is used for receiving the signals transmitted by the thickness classification module 303 and the thickness adjustment module 304 and conveying different semiconductor wafers, and the classification conveying module 305 is connected with the thickness classification module 303 and the thickness adjustment module 304.
In this embodiment, the data display module 301 displays the data transmitted by the second communication module 208, the thickness comparison module 302 compares the thicknesses of the semiconductor wafers with different sizes, the thickness classification module 303 classifies the semiconductor wafers with different thicknesses, the thickness adjustment module 304 adjusts the thickness of the semiconductor wafer with a greater thickness, and the classification and transportation module 305 classifies the semiconductor wafers with different thicknesses.
According to the invention, multiple analysis and measurement are carried out on the semiconductor wafer through the data acquisition unit 1, error adjustment processing is carried out on the data, then the data acquisition is carried out, the acquired data is transmitted to the central processing unit 2, data conversion is carried out on the data, the data is compared again, the compared data is adjusted, finally the data is stored, the stored data is transmitted to the classification processing unit 3, the data is displayed, the semiconductor wafers are classified according to different requirements, the thickness of the over-thick semiconductor wafer can be adjusted, and finally classification output is carried out, so that multiple detection is achieved, the accuracy of measurement is improved, and classification, transportation and discharge are convenient.
The above examples are only intended to illustrate the technical solution of the present invention, and not to limit it; although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; such modifications and substitutions do not depart from the spirit and scope of the corresponding technical solutions.
Claims (9)
1. A semiconductor wafer thickness detection control system is characterized by comprising a data acquisition unit (1), a central processing unit (2) and a classification processing unit (3), wherein:
the data acquisition unit (1) is used for measuring the semiconductor wafer and acquiring measured data;
the central processing unit (2) is used for receiving the data transmitted by the structural data acquisition unit (1), analyzing the tested semiconductor wafer based on the received information, comparing and adjusting the data, and then collecting and storing the data, wherein the central processing unit (2) is connected with the data acquisition unit (1);
the classification processing unit (3) is used for receiving the information transmitted by the data acquisition unit (1) for receiving, performing classification data statistics on the semiconductor wafer based on the received information, adjusting the thickness of the semiconductor wafer, and performing classification conveying, and the classification processing unit (3) is connected with the central processing unit (2).
2. The system for detecting and controlling the thickness of a semiconductor wafer according to claim 1, wherein the data acquisition unit (1) comprises an ultrasonic detection and analysis module (101), a microwave thickness detection module (102), an error processing module (103), a data adjustment module (104), a signal amplification module (105), a data acquisition module (106) and a first communication module (107), wherein:
the ultrasonic detection analysis module (101) and the microwave thickness detection module (102) respectively sense the thickness of the semiconductor wafer through ultrasonic signals and micro-acoustic signals.
3. The system of claim 2, wherein the CPU (2) comprises an analysis and filtering module (201), a data conversion module (202), a first thickness calculation module (203), a second thickness calculation module (204), a contrast adjustment module (205), a data integration module (206), a data storage module (207), and a second communication module (208), wherein:
the analysis filtering module (201) is used for analyzing the data transmitted by the data acquisition unit (1) and filtering redundant signals;
the data conversion module (202) is used for receiving the signals transmitted by the analysis filtering module (201) and converting the signals into digital scales, and the data conversion module (202) is connected with the analysis filtering module (201).
4. The system of claim 1, wherein the sorting unit (3) comprises a data display module (301), a thickness comparison module (302), a thickness sorting module (303), a thickness adjustment module (304), and a sorting and conveying module (305), wherein:
the data display module (301) is used for displaying the signal transmitted by the second communication module (208);
the thickness comparison module (302) is used for receiving signals transmitted by the data display module (301) and comparing semiconductor wafers with different thicknesses, and the thickness comparison module (302) is connected with the data display module (301).
5. The system for detecting and controlling the thickness of a semiconductor wafer according to claim 2, wherein the error processing module (103) is configured to receive signals transmitted by the ultrasonic detection and analysis module (101) and the microwave thickness detection module (102) and compare the two sets of signals, and the error processing module (103) is connected to the ultrasonic detection and analysis module (101) and the microwave thickness detection module (102), respectively;
the data adjusting module (104) is used for receiving the signal transmitted by the error processing module (103) and adjusting the data transmitted by the error processing module (103), and the data adjusting module (104) is connected with the error processing module (103).
6. The system as claimed in claim 2, wherein the signal amplification module (105) is configured to receive the signal transmitted by the data adjustment module (104) and amplify the signal transmitted by the data adjustment module (104), and the signal amplification module (105) is connected to the data adjustment module (104);
the data acquisition module (106) is used for receiving signals transmitted by the signal amplification module (105), distinguishing and acquiring the signals transmitted by the signal amplification module (105), transmitting the acquired signals to the first communication module (107), the signal amplification module (105) is connected with the data acquisition module (106), and the data acquisition module (106) is connected with the first communication module (107).
7. The system of claim 3, wherein the first thickness calculation module (203) and the second thickness calculation module (204) are configured to receive the signal transmitted by the data conversion module (202) and analyze and calculate the transmitted data, and the first thickness calculation module (203) and the second thickness calculation module (204) are respectively connected to the data conversion module (202);
the comparison adjusting module (205) is used for receiving the data transmitted by the first thickness calculating module (203) and the second thickness calculating module (204), making corresponding comparison, and adjusting the transmitted data, wherein the comparison adjusting module (205) is respectively connected with the first thickness calculating module (203) and the second thickness calculating module (204).
8. The system as claimed in claim 3, wherein the data integration module (206) is configured to receive the data transmitted by the contrast adjustment module (205), and to arrange and collect a plurality of sets of the transmitted data, the data integration module (206) is connected to the contrast adjustment module (205);
the data storage module (207) is used for receiving the signal transmitted by the data integration module (206) and storing the data transmitted by the data integration module (206), and the data storage module (207) is connected with the data integration module (206);
the second communication module (208) is used for receiving the signal transmitted by the data storage module (207) and transmitting the signal to the classification processing unit (3).
9. The system for detecting and controlling the thickness of a semiconductor wafer according to claim 4, wherein the thickness classification module (303) and the thickness adjustment module (304) are respectively used for receiving signals transmitted by the data display module (301), the thickness classification module (303) is used for classifying and placing semiconductor wafers with different thicknesses, the thickness adjustment module (304) is used for adjusting the thickness of a thicker semiconductor wafer, and the thickness classification module (303) and the thickness adjustment module (304) are connected with the thickness comparison module (302);
the classifying and conveying module (305) is used for receiving signals transmitted by the thickness classifying module (303) and the thickness adjusting module (304) and conveying different semiconductor wafers, and the classifying and conveying module (305) is connected with the thickness classifying module (303) and the thickness adjusting module (304).
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