CN114892175A - Method and system for removing thick copper of chip - Google Patents
Method and system for removing thick copper of chip Download PDFInfo
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- CN114892175A CN114892175A CN202210329751.2A CN202210329751A CN114892175A CN 114892175 A CN114892175 A CN 114892175A CN 202210329751 A CN202210329751 A CN 202210329751A CN 114892175 A CN114892175 A CN 114892175A
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- Prior art keywords
- thick copper
- etching
- copper
- ion beam
- chip
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- 229910052802 copper Inorganic materials 0.000 title claims abstract description 97
- 239000010949 copper Substances 0.000 title claims abstract description 97
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 96
- 238000000034 method Methods 0.000 title claims abstract description 25
- 238000005530 etching Methods 0.000 claims abstract description 53
- 238000010884 ion-beam technique Methods 0.000 claims abstract description 32
- 239000002184 metal Substances 0.000 claims abstract description 13
- 229910052751 metal Inorganic materials 0.000 claims abstract description 13
- QTMDXZNDVAMKGV-UHFFFAOYSA-L copper(ii) bromide Chemical compound [Cu+2].[Br-].[Br-] QTMDXZNDVAMKGV-UHFFFAOYSA-L 0.000 claims description 12
- 229910021590 Copper(II) bromide Inorganic materials 0.000 claims description 6
- 230000003993 interaction Effects 0.000 claims description 6
- 150000002500 ions Chemical class 0.000 claims description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 1
- 150000001879 copper Chemical class 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 230000036632 reaction speed Effects 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/08—Apparatus, e.g. for photomechanical printing surfaces
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/12—Gaseous compositions
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/2851—Testing of integrated circuits [IC]
- G01R31/2855—Environmental, reliability or burn-in testing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching
- H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching
- H01J37/3056—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching for microworking, e.g. etching of gratings, trimming of electrical components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/31749—Focused ion beam
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
- H01J2237/3341—Reactive etching
Abstract
The invention discloses a method for removing thick copper of a chip. The method comprises the steps of firstly, uniformly scattering metal copper lattices to be subjected to thick copper removal by independently adopting ion beam etching or uniformly loosening the metal copper lattices, and then, removing residual thick copper by combining the ion beam etching and the gas etching. And on the basis of ensuring that the thick copper is not penetrated, setting the etching thickness of the ion beam etching alone to be 80-90% of the thickness of the copper to be removed. The technical scheme provided by the invention can better solve the problems that the prior art cannot remove the thick copper of the chip cleanly and unevenly, consumes a large amount of gas and exposes the metal at the lower layer of a partial area, greatly reduces the difficulty of chip circuit repairing operation and improves the success rate. The invention also discloses a system for removing the thick copper of the chip.
Description
Technical Field
The invention relates to a link for removing thick copper of a chip in the field of chip failure analysis and processing, in particular to a method and a system for removing the thick copper of the chip.
Background
In the process of failure analysis of a chip, it is a common situation to repair the circuit of the chip. When a place needing to be modified is covered by thick copper or thick copper needs to be cut, the conventional methods mainly comprise two methods: the first is to directly etch the thick copper to be removed by ion beams; the other is to use a gas to react with the copper metal, i.e. gas etching. As shown in fig. 2, the thick copper exists in the form of copper lattice and the connection between atoms is relatively close. When the ion beam is directly used to etch the thick copper on the chip (as shown in fig. 1), the thick copper is not removed uniformly (as shown in fig. 3), some portions of the thick copper are not removed cleanly, and some portions of the lower metal are exposed. When the sampling gas etches thick copper on a chip, the problems are also caused, and the cost is too high due to the slow gas etching speed and large gas consumption. Therefore, the existing chip thick copper removing scheme has the defects that the thick copper is not completely removed, or a large amount of gas is consumed, and lower-layer metal in a partial area is exposed, so that the difficulty and the success rate of chip circuit repairing operation are greatly influenced.
Disclosure of Invention
In view of the fact that no effective method capable of uniformly removing the chip thick copper exists at present, the invention provides a method capable of uniformly removing the chip thick copper. Since the thick copper exists in the form of a copper lattice, it is necessary to try to break up or loosen the copper lattice before etching is performed. The technical scheme provided by the invention is that thick copper to be removed is densely divided into a plurality of same small-size areas box, and each small-size area is separately and continuously bombarded by an ion beam so as to uniformly loosen/break up the copper crystal lattice.
The technical scheme provided by the invention is specifically realized as follows: a method of removing chip thick copper, the method comprising: according to the size of a thick copper area needing to be removed on a chip, densely dividing the area into a plurality of square sub-areas box, wherein the density degree can be set to be 1um by 1 um; according to the thickness of the thick copper to be removed, on the basis of ensuring that the thick copper is not penetrated, etching the thick copper of each sub-area by independently adopting an ion beam to break up the metal copper lattice of the thick copper to be removed; and then removing the residual thick copper in the whole area needing to remove the thick copper by adopting two modes of ion beam etching and gas etching.
Further before separately etching the thick copper of each of the sub-regions with the ion beam, the method further comprises: according to the size of thick copper to be removed, the output energy/power of a focusing ion gun is selected, when a sub-region is etched, the etching time is controlled to be about 1 minute, proper output energy and power are selected according to the time, when the whole region is etched, the etching time is controlled to be about 15 minutes, the output energy and power are adjusted according to the time, in the two etching processes, after the energy is selected, the output energy/power of a focusing ion beam cannot be changed, and the copper crystal lattice scattering is uneven due to midway exchange. The gas used for gas etching is HBr2 gas, when the ion beam bombards the surface of the residual thick copper, HBr2 reacts with copper metal to form CuBr2 vapor, and the CuBr2 vapor is extracted in a vacuum state.
Preferably, the etching thickness of the ion beam etching alone is 80% -90% of the thickness of the copper to be removed.
The invention also provides a system for removing the thick copper of the chip, which comprises an interaction module, a positioning module and an etching module; the interaction module comprises an image display unit and an operation unit; the positioning module comprises a camera shooting unit, the camera shooting unit can shoot pictures and obtain size information displayed by shot objects in the pictures, and the pictures and the size information are transmitted to the image display unit; the image display unit can display the picture and divide the displayed picture into a plurality of square sub-areas according to the size information, such as sub-areas of 1um by 1 um; the square sub-area can be selected through the operation unit, and the sub-area information is transmitted to the etching module; and the etching module etches the selected subarea.
Further, the etching module comprises an ion beam etching unit and a gas etching unit. The system may be used to perform the thick copper removal method described above.
Drawings
FIG. 1 is a schematic illustration of a focused ion beam alone used to etch a chip of thick copper;
FIG. 2 is an image of a metallic copper lattice under an electron microscope;
FIG. 3 is a schematic diagram illustrating the effect of etching a thick copper wafer using a focused ion beam alone;
FIG. 4 is a schematic diagram of a system for removing thick copper according to the present invention.
Detailed Description
In order to make the technical problems, technical solutions and advantages solved by the present invention more apparent, the present invention is further described in detail below with reference to the accompanying drawings. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
The invention provides a method for removing thick copper of a chip, which comprises the following steps: densely dividing a region on a chip, from which thick copper needs to be removed, into a plurality of sub-region boxes; according to the thickness of the thick copper to be removed, on the basis of ensuring that the thick copper is not penetrated, firstly, etching the thick copper of each sub-region by independently adopting an ion beam so as to break up lattices of the thick copper to be removed; and simultaneously removing the residual thick copper in the whole area needing to remove the thick copper by adopting two modes of ion beam etching and gas etching.
Further, the gas used for the gas etching is HBr2 gas. HBr2 reacts with copper metal to form CuBr2 vapor when the ion beam bombards the residual thick copper surface; the CuBr2 vapor was then evacuated under vacuum. The reason why the ion beam is adopted to etch the thick copper of each subarea is that the metal copper crystal lattices of the thick copper can be scattered uniformly or loosened uniformly, which is favorable for improving the chemical reaction speed of the subsequent gas etching combined in and reducing the difficulty of the chemical reaction; the method is favorable for quickly and cleanly removing the thick copper on the chip and reducing the consumption of gas.
Preferably the etch thickness using ion beam etching alone is dependent on the thickness of the thick copper, typically determined to be 80% to 90% of the thickness of the copper to be removed. For example, the etch thickness can be selected to be 80% of the thick copper thickness (e.g., 3.4 microns thick copper, about 2.7 microns box) using ion beam etching alone.
Further before separately etching the thick copper of each of the sub-regions with the ion beam, the method further comprises: the most suitable output energy/power of the focusing ion gun is selected according to the size of the thick copper to be removed. Preferably, the sub-region is a square sub-region.
According to the scheme provided by the invention, the metal copper lattice to be removed of the thick copper is scattered or loosened by adopting ion beam etching alone, and then the rest thick copper is removed completely by combining the ion beam etching and the gas etching. The technical scheme provided by the invention can better control the removal degree of the thick copper of the chip, better solves the problems that the thick copper of the chip can not be completely removed, a large amount of gas is consumed and the lower-layer metal of a partial area is exposed in the prior art, greatly reduces the difficulty of chip line repairing operation and improves the success rate.
The invention also provides a system matched with the method, which comprises an interaction module, a positioning module and an etching module; the interaction module comprises an image display unit and an operation unit; the positioning module comprises a camera shooting unit, the camera shooting unit can shoot pictures and obtain size information displayed by shot objects in the pictures, and the pictures and the size information are transmitted to the image display unit; the image display unit can display the picture and divide the displayed picture into a plurality of square sub-areas according to the size information, such as sub-areas of 1um by 1 um; an operator can select the square sub-area of the desired department through the operation unit, and the etching module etches the selected sub-area according to the selection instruction. The etching module comprises an ion beam etching unit and a gas etching unit.
Claims (8)
1. A method for removing chip thick copper is characterized by comprising the following steps: uniformly dividing a thick copper area on a chip into a plurality of square sub-areas box; selecting sub-regions needing to remove thick copper, and according to the thickness of the thick copper needing to be removed, on the basis of ensuring that the thick copper is not penetrated, etching each selected sub-region thick copper by independently adopting an ion beam to uniformly break up lattices of the thick copper needing to be removed; and then removing the residual thick copper of the selected subarea by simultaneously adopting an ion beam etching mode and a gas etching mode for the whole area needing to remove the thick copper.
2. The method of claim 1, wherein each of the square subregions has a size of 1um to 1 um.
3. The method of claim 1, wherein prior to said separately employing an ion beam to etch the thick copper of each of said sub-regions, the method further comprises: the output energy/power of the focusing ion gun is selected as appropriate according to the size of the thick copper to be removed.
4. The method according to claim 1, wherein the etching of the thick copper of each sub-region uniformly by using the ion beam alone is performed according to the thickness of the thick copper to be removed, while ensuring that the thick copper is not penetrated, specifically: the etching thickness of the ion beam etching alone is 80-90% of the thickness of the copper to be removed.
5. The method of claim 1 wherein the gas etch employs HBr2 gas, and HBr2 reacts with copper metal to form CuBr2 vapor when the ion beam bombards the remaining thick copper surface, and the CuBr2 vapor is evacuated under vacuum.
6. A system for removing thick copper of a chip is characterized by comprising an interaction module, a positioning module and an etching module; the interaction module comprises an image display unit and an operation unit; the positioning module comprises a camera shooting unit, the camera shooting unit can shoot pictures and obtain size information displayed by shot objects in the pictures, and the pictures and the size information are transmitted to the image display unit; the image display unit can display the picture and divide the displayed picture into a plurality of square sub-areas according to the size information; the square sub-area can be selected through the operation unit, and the sub-area information is transmitted to the etching module; and the etching module etches the selected subarea.
7. The system of claim 6, wherein the etching module comprises an ion beam etching unit and a gas etching unit.
8. The system of claim 7, wherein the thick copper of the chip is removed using any of the methods of claims 1-5.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210329751.2A CN114892175A (en) | 2022-03-28 | 2022-03-28 | Method and system for removing thick copper of chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210329751.2A CN114892175A (en) | 2022-03-28 | 2022-03-28 | Method and system for removing thick copper of chip |
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| Publication Number | Publication Date |
|---|---|
| CN114892175A true CN114892175A (en) | 2022-08-12 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210329751.2A Pending CN114892175A (en) | 2022-03-28 | 2022-03-28 | Method and system for removing thick copper of chip |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6863787B2 (en) * | 2003-04-02 | 2005-03-08 | Fei Company | Dummy copper deprocessing |
| CN109950121A (en) * | 2019-04-15 | 2019-06-28 | 江苏鲁汶仪器有限公司 | A kind of energization ion source baffle |
-
2022
- 2022-03-28 CN CN202210329751.2A patent/CN114892175A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6863787B2 (en) * | 2003-04-02 | 2005-03-08 | Fei Company | Dummy copper deprocessing |
| CN109950121A (en) * | 2019-04-15 | 2019-06-28 | 江苏鲁汶仪器有限公司 | A kind of energization ion source baffle |
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