CN114891505B - Preparation method and application of blue-light dodecahedral perovskite quantum dot material - Google Patents
Preparation method and application of blue-light dodecahedral perovskite quantum dot material Download PDFInfo
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Abstract
The invention belongs to the technical field of quantum dots, and particularly relates to a preparation method and application of a blue-light dodecahedral perovskite quantum dot material. The preparation method provided by the invention comprises the following steps: injecting cesium oleate precursor into PbBr 2 Crystallization reaction occurs in the reaction liquid to obtain first CsPbBr 3 Quantum dots; the first CsPbBr 3 The quantum dots are nanosheets in shape; adding the first CsPbBr 3 The quantum dot dispersion liquid is mixed with the amino hydrobromide solution to obtain a second CsPbBr 3 A quantum dot dispersion; second CsPbBr 3 The appearance of the quantum dots is a nanocube; subjecting the second CsPbBr to 3 Standing the quantum dot dispersion liquid in a polar solvent steam atmosphere to obtain the CsPbBr with the shape of nano dodecahedron 3 And (4) quantum dots. The nanometer dodecahedral CsPbBr prepared by the preparation method provided by the invention 3 The quantum dots have fluorescence quantum yield and luminescence stability.
Description
Technical Field
The invention belongs to the technical field of quantum dots, and particularly relates to a preparation method and application of a blue-light dodecahedral perovskite quantum dot material.
Background
Among various photoelectric materials, perovskite quantum dots are distinguished by excellent performance. Compared with organic-inorganic hybrid perovskite quantum dots, the all-Inorganic Perovskite Quantum Dots (IPQDS) are higher in stability. The IPODS has attracted attention due to its characteristics of high light absorption coefficient, narrow emission spectrum, high photoluminescence quantum yield (PLQY), adjustable composition and size, adjustable emission spectrum, photoluminescence and electroluminescence, etc., and is one of the most potential photoelectric materials at present, and is widely used in the fields of Light Emitting Diodes (LEDs), solar cells or photodetectors, etc.
Wherein the all-inorganic perovskite CsPbX 3 Quantum dots (PeQDs) having excellent luminescence properties (X = Br, cl, I) have been widely studied and applied since being reported.
The traditional synthesis method of the PeQDs comprises a hot injection method and a room temperature auxiliary reprecipitation method, but because the quantum dots have the characteristic of ultrafast crystallization kinetics, the nucleation and the growth of quantum dot crystals are very rapid, and the growth of most of nano crystals is completed within 10s, the traditional synthesis method cannot regulate and control the processes of nucleation, crystal growth and appearance transformation of the PeQDs, so that the crystal appearance of the PeQDs cannot be better regulated and controlled, the defects on the surfaces of the quantum dots cannot be further reduced, the surface energy of the quantum dots is reduced, and the fluorescence quantum yield is improved.
Therefore, the fluorescence quantum yield of the PeQDs prepared by the traditional synthetic method is still lower (< 50%), and needs to be further improved.
Disclosure of Invention
In view of the above, the invention provides a preparation method and application of a blue-light dodecahedral perovskite quantum dot material. The morphology of CsPbBr provided by the invention is dodecahedron 3 The quantum dots have high fluorescence quantum yield and luminescence stability.
In order to solve the technical problem, the invention provides CsPbBr with dodecahedron shape 3 The preparation method of the quantum dot comprises the following steps:
injecting cesium oleate precursor into PbBr 2 Crystallization reaction occurs in the reaction liquid to obtain first CsPbBr 3 Quantum dots of said PbBr 2 The reaction solution comprises PbBr 2 Oleic acid, oleylamine and organic solvents; the first CsPbBr 3 The quantum dots are nanosheets in shape;
adding the first CsPbBr 3 The dispersion liquid of the quantum dots is mixed with the amino hydrobromide solution to obtain a second CsPbBr 3 A quantum dot dispersion; second CsPbBr 3 The shape of the quantum dot is a nanocube;
subjecting the second CsPbBr to 3 Standing the quantum dot dispersion liquid in a polar solvent steam atmosphere to obtain the CsPbBr with the shape of nano dodecahedron 3 And (4) quantum dots.
Preferably, cs in the cesium oleate precursor solution + And the PbBr 2 Pb in the reaction solution 2+ The molar ratio of (0.2-1) to (1).
Preferably, the first CsPbBr 3 In quantum dot dispersionFirst CsPbBr of 3 The mass ratio of the quantum dots to the amino hydrobromide in the amino hydrobromide solution is 10 (1-2.5).
Preferably, the temperature of the environment during standing is 20-75 ℃, and the standing time is 0.5-2 h.
Preferably, the first CsPbBr 3 The mass concentration of the quantum dot dispersion liquid is 3-10 mg/mL, and the first CsPbBr is 3 The quantum dot dispersion liquid is first CsPbBr 3 A n-hexane dispersion of quantum dots.
Preferably, the mass content of the amino hydrobromic acid salt solution is 2-5 per mill.
Preferably, the amino hydrobromide is n-octylamine hydrobromide.
The invention provides CsPbBr prepared by the preparation method in the technical scheme 3 Quantum dots, csPbBr 3 The appearance of the quantum dot is a nanometer dodecahedron.
The invention provides CsPbBr in the technical scheme 3 Application of quantum dots in light emitting diodes, solar cells or photodetectors.
The invention provides a quantum dot light-emitting diode, which comprises an anode, a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, an electron injection layer and a cathode which are sequentially stacked, wherein the light-emitting layer is made of CsPbBr in the technical scheme 3 Quantum dots
The invention provides CsPbBr with dodecahedron morphology 3 The preparation method of the quantum dot comprises the following steps: injecting cesium oleate precursor into PbBr 2 Crystallization reaction occurs in the reaction liquid to obtain first CsPbBr 3 Quantum dots of said PbBr 2 The reaction solution comprises PbBr 2 Oleic acid, oleylamine and an organic solvent; the first CsPbBr 3 The quantum dots are nanosheets; adding the first CsPbBr 3 The quantum dot dispersion liquid is mixed with the amino hydrobromide solution to obtain a second CsPbBr 3 A quantum dot dispersion; second CsPbBr 3 The appearance of the quantum dots is a nanocube; subjecting the second CsPbBr to 3 Quantum dot dispersion standing in polar solventIn the steam atmosphere, the CsPbBr with the shape of nano dodecahedron is obtained 3 And (4) quantum dots. The preparation method provided by the invention firstly adopts a thermal injection method, and uses cesium oleate precursor solution and PbBr 2 The reaction liquid is used as a raw material, oleic acid is used as a surface ligand, oleylamine is used as a cosolvent to obtain first CsPbBr with the shape of a nano sheet 3 Quantum dots; then inducing the first CsPbBr by amino hydrobromide in a solution system 3 The appearance of the quantum dot is changed from a nano sheet to a nano cube, and finally, under the further induction action in the atmosphere of polar solvent steam, csPbBr 3 The appearance of the quantum dot is changed into a nanometer dodecahedron from a nanometer cube. Therefore, the preparation method provided by the invention successfully realizes the regulation and control of CsPbBr by selecting a proper crystal morphology inducer on the basis of selecting a proper surface ligand and a proper cosolvent by a thermal injection method 3 The purpose of the quantum dot morphology is to finally prepare the nano dodecahedral CsPbBr 3 The quantum dots have the characteristics of less surface defects and low surface energy, and effectively improve CsPbBr 3 Fluorescence quantum yield and luminescence stability of the quantum dots. The results of the embodiment show that the CsPbBr with the shape of nano dodecahedron prepared by the preparation method provided by the invention 3 The fluorescence quantum yield of the quantum dots is 80-90%.
The preparation method provided by the invention is simple to operate, low in cost and suitable for industrial production.
Drawings
FIG. 1 shows first CsPbBr with nanosheet morphology prepared in example 1 of the present invention 3 Electron microscope photographs of the quantum dots;
FIG. 2 shows a second CsPbBr with a nanocube morphology prepared in example 1 of the present invention 3 Electron microscope photographs of the quantum dots;
FIG. 3 shows a nano-dodecahedral morphology CsPbBr prepared in example 1 of the present invention 3 Electron micrograph of quantum dots.
Detailed Description
The invention provides CsPbBr with dodecahedron morphology 3 The preparation method of the quantum dot comprises the following steps:
subjecting cesium oleate precursor solutionInjecting PbBr 2 Crystallization reaction occurs in the reaction liquid to obtain first CsPbBr 3 Quantum dots of said PbBr 2 The reaction solution comprises PbBr 2 Oleic acid, oleylamine and organic solvents; the first CsPbBr 3 The quantum dots are nanosheets;
adding the first CsPbBr 3 Mixing the quantum dot dispersion liquid with an amino hydrobromide solution to obtain second CsPbBr 3 A quantum dot dispersion; second CsPbBr 3 The appearance of the quantum dots is a nanocube;
adding the second CsPbBr 3 Standing the quantum dot dispersion liquid in a polar solvent steam atmosphere to obtain the CsPbBr with the shape of nano dodecahedron 3 And (4) quantum dots.
In the present invention, the starting materials are all commercially available products well known to those skilled in the art unless otherwise specified.
The invention injects cesium oleate precursor solution into PbBr 2 Crystallization reaction occurs in the reaction liquid to obtain first CsPbBr 3 Quantum dots of said PbBr 2 The reaction solution comprises PbBr 2 Oleic acid, oleylamine and an organic solvent; the first CsPbBr 3 The quantum dots are nanosheets in shape.
In the present invention, the preparation method of the cesium oleate precursor solution preferably comprises the following steps:
in the anhydrous and anaerobic environment, cs 2 CO 3 And mixing the oleic acid and the first organic solvent to react to obtain the cesium oleate.
In the present invention, the Cs 2 CO 3 The ratio of the mass of (b) to the volume of oleic acid is preferably 0.16g.
In the present invention, the first organic solvent is particularly preferably octadecene.
In the present invention, the volume ratio of the oleic acid to the first organic solvent is preferably 1.
In the present invention, the incubation temperature for the reaction to generate cesium oleate is preferably 120 to 150 ℃.
In the present invention, the incubation temperature for the reaction for producing cesium oleate is specifically preferably: after the reaction is carried out at 120 ℃, the temperature is continuously increased to 150 ℃ for reaction.
The reaction time of the present invention at 120 ℃ is preferably 30min.
The reaction time at 150 ℃ in the invention is preferably based on the clarity and transparency of the reaction solution.
In the present invention, the reaction to generate the cesium oleate is carried out in an anhydrous oxygen-free environment, which is preferably achieved by evacuating the reaction vessel under vacuum.
In the present invention, the reaction vessel is preferably subjected to water-removing and oxygen-removing operations before the reaction to produce the cesium oleate is carried out.
In the present invention, the water and oxygen removing operation is preferably performed by a vacuum pump.
In the present invention, the time for the water and oxygen removal operation is preferably 15min.
In the invention, after the reaction for generating the cesium oleate is finished, the reaction liquid obtained by the reaction is preferably cooled to 90 ℃ from the reaction temperature of 150 ℃, and then protective gas is introduced into the reaction vessel to avoid oxidation of the cesium oleate generated by the reaction.
In the present invention, the protective gas is preferably an inert gas, and more preferably argon gas.
In the invention, the reaction liquid obtained after the cesium oleate is generated and reacted does not need to be subjected to post-treatment, and the reaction liquid is the cesium oleate precursor liquid.
In the present invention, since cesium oleate is solid at normal temperature, the cesium oleate precursor solution is preferably heated to 90 ℃ before use, so that cesium oleate in the cesium oleate precursor solution is completely dissolved.
In the present invention, the PbBr is 2 The reaction solution comprises PbBr 2 Oleic acid, oleylamine and an organic solvent (hereinafter referred to as a second dissolution).
In the present invention, the second solvent is particularly preferably octadecene.
In the present invention, the PbBr is 2 The ratio of the mass of (b) to the volume of the second solvent is preferably 73.4 mg.
In the present invention, the volume ratio of the oleic acid, oleylamine and the second organic solvent is preferably 1.
In the present invention, the PbBr is preferably treated before the cesium oleate precursor solution is injected 2 And (4) pretreating the reaction solution.
In the present invention, the pretreatment preferably includes the steps of: in an anhydrous and oxygen-free environment, the PbBr is added 2 Heating the reaction solution to 120 ℃ for dissolving and cleaning, passing protective gas, and then dissolving and cleaning PbBr 2 The reaction solution was cooled to 90 ℃. In the invention, the anhydrous oxygen-free environment is preferably a vacuum environment, and the invention preferably heats the PbBr 2 Before the reaction solution, the reaction vessel was evacuated for 30min. In the present invention, the protective gas is preferably an inert gas, and more preferably argon.
In the invention, when the cesium oleate precursor solution is injected, the PbBr is added 2 The temperature of the reaction solution is preferably 90 ℃.
In the invention, cs in the cesium oleate precursor solution + And the PbBr 2 Pb in the reaction solution 2+ The molar ratio of (2) to (1) is (0.2 to 1), preferably (0.3 to 0.8) to 1.
In a specific embodiment of the invention, cs in the cesium oleate precursor solution + And the PbBr 2 Pb in the reaction solution 2 + The molar ratio of (a) to (b) is specifically preferably 0.3.
In the present invention, the temperature of the crystallization reaction is preferably 90 ℃.
In the present invention, the incubation time for the crystallization reaction is preferably 10s.
In the invention, the crystallization reaction is carried out to obtain a crystallization reaction liquid, and the crystallization reaction liquid is preferably subjected to post-treatment to obtain the first CsPbBr 3 And (4) quantum dots. In the present invention, the post-treatment preferably comprises: and sequentially carrying out cooling and solid-liquid separation. In the present invention, the specific operation of cooling is preferably: and immediately placing the crystallization reaction liquid in an ice water bath for cooling treatment. In the invention, after the temperature reduction treatment, first CsPbBr is precipitated from the crystallization reaction liquid 3 Quantum dotsAnd (5) crude product. In the present invention, the crystallization reaction of the temperature reduction treatment is preferably subjected to solid-liquid separation, in the present invention, the solid-liquid separation is preferably performed by centrifugation, in the present invention, the rotation speed of the centrifugation is preferably 9000rpm, and the time of the centrifugation is preferably 10min. In the invention, the solid product obtained by the solid-liquid separation is the first CsPbBr 3 And (4) quantum dots.
To obtain the first CsPbBr 3 After quantum dots, the invention uses the first CsPbBr 3 Mixing the quantum dot dispersion liquid with an amino hydrobromide solution to obtain second CsPbBr 3 A quantum dot dispersion; second CsPbBr 3 The appearance of the quantum dots is a nanocube.
The first CsPbBr is preferably used in the invention 3 The quantum dots are dispersed in a dispersing agent to obtain first CsPbBr 3 A quantum dot dispersion.
In the present invention, the first CsPbBr 3 The quantum dot dispersion is preferably an n-hexane dispersion.
In the present invention, the first CsPbBr 3 The mass concentration of the quantum dot dispersion is 3 to 10mg/mL, and more preferably 4.5 to 8mg/mL.
In the present invention, the amine hydrobromide salt in the amine hydrobromide solution preferably includes one or more of n-octylamine hydrobromide, phenethylamine hydrobromide, butylamine hydrobromide, p-fluorobenzoic acid hydrobromide and isopropylamine hydrobromide.
In a specific embodiment of the present invention, the amino hydrobromide is specifically n-octylamine hydrobromide.
In the present invention, the solvent in the amine hydrobromide solution is specifically toluene.
In the present invention, the mass content of the amino hydrobromide solution is preferably 2 to 5%, more preferably 2.5 to 4.5%.
In the present invention, the first CsPbBr 3 First CsPbBr in Quantum dot Dispersion 3 The mass ratio of the quantum dots to the amino hydrobromide in the amino hydrobromide solution is preferably 10 (1-2.5), more preferably 10 (1.2-2.3).
The invention has no special requirements for the specific implementation process of the mixing.
To obtain a second CsPbBr 3 After the quantum dot dispersion liquid is obtained, the second CsPbBr is added in the invention 3 The quantum dot dispersion liquid is statically placed in the atmosphere of polar solvent steam to obtain the CsPbBr with the shape of nano dodecahedron 3 And (4) quantum dots.
In the present invention, the polar solvent is preferably a volatile small molecule polar solvent, more preferably one or more of ethanol, acetone, methanol and ethyl acetate.
In a specific embodiment of the present invention, the polar solvent is particularly preferably ethanol.
In the present invention, the temperature of the environment at the time of the standing is preferably 20 to 75 ℃, more preferably 25 to 70 ℃.
In a specific embodiment of the present invention, the temperature of the volatile alcohol solvent atmosphere during the standing is specifically preferably 30 ℃,40 ℃,50 ℃,60 ℃,70 ℃.
In the present invention, the time for the standing is preferably 0.5 to 2 hours, and more preferably 1 hour.
The invention provides CsPbBr prepared by the preparation method in the technical scheme 3 Quantum dots of CsPbBr 3 The appearance of the quantum dot is a nano dodecahedron.
The invention provides the CsPbBr with the dodecahedron appearance in the technical scheme 3 Application of quantum dots in light emitting diodes, solar cells, photodetectors or lasers.
The invention provides a quantum dot light-emitting diode, which comprises an anode, a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, an electron injection layer and a cathode which are sequentially stacked, wherein the light-emitting layer is made of CsPbBr with the shape of a dodecahedron in the technical scheme 3 And (4) quantum dots.
In the present invention, the thickness of the light-emitting layer is preferably 50nm.
In the present invention, the material of the anode is particularly preferably organic conductive glass (ITO).
In the present invention, the material of the hole injection layer is preferably PEDOT: PSS.
In the present invention, the material of the hole transport layer is particularly preferably Polyvinylcarbazole (PVK).
In the present invention, the material of the electron transport layer is preferably TPBi.
In the present invention, the material of the cathode is preferably Al.
The invention provides a preparation method of a quantum dot light-emitting diode in the technical scheme, which comprises the following steps:
spin-coating a hole injection layer on the anode, and performing first annealing forming to obtain a hole injection layer;
spin-coating a hole transport layer on the hole injection layer, and performing second annealing forming to obtain a hole transport layer;
the CsPbBr with the shape of dodecahedron, which is described in the technical scheme 3 The quantum dots are coated on the hole transport layer in a spinning mode, and the luminescent layer is obtained through third annealing forming;
a first evaporation electron transport layer is arranged on the luminous layer to obtain an electron transport layer;
a second evaporation electron injection layer is arranged on the electron transmission layer to obtain an electron injection layer;
and the third evaporation cathode layer is arranged on the electron injection layer to obtain the quantum dot light-emitting diode.
In the present invention, the temperature of the first annealing formation is preferably 140 ℃, and the time of the first annealing formation is 15min.
In the present invention, the temperature of the second annealing formation is preferably 140 ℃, and the time of the first annealing formation is 15min.
In the present invention, the temperature of the third annealing and forming is preferably 50 ℃, and the time of the first annealing and forming is 5min.
In the present invention, the degree of vacuum of the first vapor deposition is preferably 6 × 10 -4 pa。
In the present invention, the degree of vacuum of the second vapor deposition is preferably 6 × 10 -4 pa。
In the present invention, the degree of vacuum of the third vapor deposition is preferably set toIs 6X 10 -4 pa。
In order to further illustrate the present invention, the following technical solutions provided by the present invention are described in detail with reference to the examples, but they should not be construed as limiting the scope of the present invention.
Example 1
0.16gCs 2 CO 3 1mL of oleic acid and 16mL of octadecene are placed in a 100mL three-neck flask, water and oxygen are removed by using a vacuum pump at room temperature for 15min, then the temperature is raised to 120 ℃, vacuum drying is continued for 30min, and the temperature is raised to 150 ℃ again to enable Cs to be in a state of being subjected to Cs 2 CO 3 Completely reacting with oleic acid, and finally clarifying and transparent the solution to obtain a cesium oleate precursor solution; and after the reaction is finished, the vacuum state of the cesium oleate precursor liquid is changed into an argon atmosphere, so that cesium oleate is prevented from being oxidized, and the cesium oleate precursor liquid is solid at room temperature and needs to be heated to 90 ℃ to melt the cesium oleate before use.
73.4mgPbBr was weighed 2 Placing 10mL of octadecene, 1mL of oleic acid and 1mL of oleylamine into a 100mL three-neck flask, vacuum-drying at room temperature for 30min, then raising the temperature to 120 ℃ until all inorganic salts are dissolved, and keeping the temperature for 30min to obtain PbBr 2 Introducing argon gas into the reaction solution for protection, reducing the temperature to 90 ℃, and respectively adding Cs in the cesium oleate precursor solution after the temperature is stable + And PbBr 2 Pb in the reaction solution 2+ And (2) injecting cesium oleate precursor liquid according to the molar ratio of 0.3 3 Quantum, electron micrograph shown in FIG. 1; dispersing the centrifugal solid precipitate into 10mL of n-hexane solution to obtain first CsPbBr 3 A quantum dot dispersion.
0.25mmol of n-octylaminohydrobromide was weighed out and dissolved in 2.5ml of toluene to obtain an aminohydrobromide solution.
Adding 2 per mill of amino-hydrobromic acid salt solution into 1mL of first CsPbBr in the shape of nanosheet 3 Obtaining a second CsPbBr with a nano-cubic appearance in the quantum dot dispersion liquid 3 A quantum dot dispersion;
adding a second CsPbBr 3 The quantum dot dispersion liquid is processed for 1h in the ethanol atmosphere of 50 ℃ to obtain the CsPbBr with the morphology of dodecahedron 3 A quantum dot dispersion.
Examples 2 to 6
The preparation method is basically the same as that of example 1, except that: the temperature of the ethanol atmosphere was 25 ℃,30 ℃,40 ℃,60 ℃ and 70 ℃, respectively.
Examples 7 to 9
The preparation method is basically the same as that of example 1, except that: cs in cesium oleate precursor solution + And PbBr 2 Pb in the reaction solution 2+ The molar ratios are respectively 0.5.
Example 10
Spin-coating a hole injection layer PEDOT: PSS is arranged on the anode ITO, and then annealing is carried out for 15min at 140 ℃ for forming, so as to obtain a hole injection layer; dispersing PVK by chlorobenzene to obtain PVK dispersion liquid, spin-coating the PVK dispersion liquid on a hole injection layer, and then annealing at 140 ℃ for 15min for forming a hole transport layer; nano-dodecahedral morphology CsPbBr prepared in example 1 was spin-coated in a glove box 3 The quantum dot film is arranged on the hole transport layer and is formed by annealing at 50 ℃ for 5min to obtain a luminescent layer; under vacuum degree of 6X 10 -4 Evaporating an electron transport layer and an electron injection layer under pa; finally, the vacuum degree is 6 multiplied by 10 -4 And (pa) evaporating a cathode layer on the electron injection layer under the condition of pa to obtain the quantum dot light-emitting diode.
Although the present invention has been described in detail with reference to the above embodiments, it is only a part of the embodiments of the present invention, not all of the embodiments, and other embodiments can be obtained without inventive step according to the embodiments, and the embodiments are within the scope of the present invention.
Claims (9)
1. CsPbBr with dodecahedron appearance 3 The preparation method of the quantum dot comprises the following steps:
injecting cesium oleate precursor into PbBr 2 Crystallization reaction occurs in the reaction liquid to obtain first CsPbBr 3 Quantum dots of said PbBr 2 The reaction solution comprises PbBr 2 Oleic acid, oleylamine and organic solvents; the first CsPbBr 3 The quantum dots are nanosheets in shape;
adding the first CsPbBr 3 The dispersion liquid of the quantum dots is mixed with the amino hydrobromide solution to obtain second CsPbBr 3 A quantum dot dispersion; second CsPbBr 3 The shape of the quantum dot is a nanocube; the amino hydrobromide is n-octylamino hydrobromide;
subjecting the second CsPbBr to 3 Standing the quantum dot dispersion liquid in a polar solvent steam atmosphere to obtain the CsPbBr with the shape of nano dodecahedron 3 Quantum dots; the polar solvent is ethanol.
2. The method of claim 1, wherein Cs is present in the cesium oleate precursor solution + And the PbBr 2 Pb in the reaction solution 2+ The molar ratio of (0.2-1) to (1).
3. The method of claim 1, wherein the first CsPbBr is added 3 First CsPbBr in Quantum dot Dispersion 3 The mass ratio of the quantum dots to the amino hydrobromide in the amino hydrobromide solution is 10 (1-2.5).
4. The method according to claim 1, wherein the ambient temperature at the time of the standing is 20 to 75 ℃, and the time of the standing is 0.5 to 2 hours.
5. The production method according to claim 1 or 3, wherein the first CsPbBr is 3 The mass concentration of the quantum dot dispersion liquid is 3-10 mg/mL, and the first CsPbBr is 3 The quantum dot dispersion liquid is first CsPbBr 3 A n-hexane dispersion of quantum dots.
6. The preparation method according to claim 1 or 3, characterized in that the mass content of the amino hydrobromide solution is 2-5% o.
7. CsPbBr obtained by preparation method according to any one of claims 1 to 6 3 Quantum dots, csPbBr 3 The appearance of the quantum dot is a nanometer dodecahedron.
8. The CsPbBr of claim 7, wherein 3 Application of quantum dots in light emitting diodes, solar cells or photodetectors.
9. A quantum dot light-emitting diode comprising an anode, a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, an electron injection layer and a cathode which are sequentially stacked, wherein the material of the light-emitting layer is CsPbBr according to claim 7 3 And (4) quantum dots.
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| CN107500345A (en) * | 2017-08-24 | 2017-12-22 | 中国科学院长春光学精密机械与物理研究所 | A kind of preparation method of perovskite quantum dot |
| CN108314077A (en) * | 2018-02-01 | 2018-07-24 | 扬州大学 | The simple method for preparing full-inorganic perovskite nanostructure |
| CN109054806B (en) * | 2018-08-09 | 2020-12-22 | 华南理工大学 | FAX-modified metal halogen perovskite quantum dot and preparation method and application thereof |
| CN109385268A (en) * | 2018-10-18 | 2019-02-26 | 天津大学 | A kind of synthetic method of organic inorganic hybridization perovskite quantum dot |
| CN109266325B (en) * | 2018-11-06 | 2021-08-10 | 东南大学 | Preparation method of blue light emitting perovskite quantum dot based on surface modifier |
| CN111883679B (en) * | 2020-07-04 | 2022-07-19 | 苏州大学 | Blue-light perovskite light-emitting diode based on total bromine proportion and preparation method thereof |
| CN112375567B (en) * | 2020-11-10 | 2022-12-06 | 合肥工业大学 | Method for preparing cesium-lead-bromine perovskite quantum dots based on in-situ aminosilane and bromide ion passivation |
| CN113881430A (en) * | 2021-09-28 | 2022-01-04 | 吉林大学 | ZnBr2Induced non-luminescence Cs4PbBr6Phase change of quantum dots into green light CsPbBr3Method for quantum dots |
| CN114163991A (en) * | 2021-12-09 | 2022-03-11 | 闽都创新实验室 | Perovskite nanocrystalline with stable appearance at high temperature and preparation method thereof |
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