CN112259701A - Perovskite thin film and preparation method and application thereof - Google Patents
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Abstract
The invention discloses a perovskite thin film and a preparation method and application thereof. The preparation method of the perovskite thin film comprises the following steps: 1) mixing CsI, CsBr and PbI2Mixing to prepare a perovskite precursor solution; 2) preparing an ethyl amine iodide solution; 3) and mixing the perovskite precursor solution and the ethyl amine iodide solution, forming a film, and annealing to obtain the perovskite thin film. According to the invention, ethyl amine iodide is added into the perovskite precursor solution and then film formation is carried out, inorganic perovskite crystals with small particle size can be formed under the passivation effect of ethyl amine iodide, and the perovskite thin film with low defect state density, small crystal grain size and high exciton confinement energy is further prepared.
Description
Technical Field
The invention relates to the technical field of perovskite, in particular to a perovskite thin film and a preparation method and application thereof.
Background
The structural general formula of the perovskite is AMX3(A is CH)3NH3 +、CH(NH2)2 +Or Cs+M is Pb2+、Sn2+、Cu2+、Ni2+、Mn2 +、Fe2+、Co2+Or Eu2+X is I-、Br-Or Cl-) It has long carrier diffusion length, high extinction coefficient, high photoluminescence quantum efficiency and high defect tolerance. In recent years, perovskite materials have been rapidly developed and widely used in the fields of solar cells, electroluminescent diodes, lasers, detectors, and the like. The perovskite material can change the forbidden bandwidth by adjusting the type and the proportion of halogen atoms, thereby realizing the emission from near infrared to blue light, red light and green light perovskite electroluminescent devices with external quantum efficiency of more than 20 percent are prepared at present, and the perovskite electroluminescent devices have good application prospect.
The luminescent material in the red perovskite electroluminescent device is mainly APbBrxI3-x(A is CH)3NH3 +、CH(NH2)2 +Or Cs+And x is 0-3). At present, organic-inorganic hybrid three-dimensional perovskites (i.e. A is CH) are used3NH3 +Or CH (NH)2)2 +) When the perovskite thin film is prepared, the crystal grain growth is faster in the spin coating crystallization process, so that the crystal grain size is larger, the quality of the thin film is not high, the exciton confinement energy is low, the thermal stability is not good, and finally the performance of the prepared device is poor, and the full-inorganic perovskite (namely A is Cs) is adopted+) The perovskite thin film also has the problems of too fast grain growth and too large grain size.
Therefore, it is highly desirable to develop a new perovskite thin film preparation method and prepare a perovskite thin film having low defect density, small crystal grain size and high exciton confinement energy.
Disclosure of Invention
An object of the present invention is to provide a perovskite thin film having a low defect state density, a small crystal grain size and a high exciton confinement energy.
The second object of the present invention is to provide a method for preparing the perovskite thin film.
The invention also aims to provide the application of the perovskite thin film in an electroluminescent device.
The technical scheme adopted by the invention is as follows:
the preparation method of the perovskite thin film comprises the following steps:
1) mixing CsI, CsBr and PbI2Mixing to prepare a perovskite precursor solution;
2) preparing an ethyl amine iodide solution;
3) and mixing the perovskite precursor solution and the ethyl amine iodide solution, forming a film, and annealing to obtain the perovskite thin film.
Preferably, the preparation method of the perovskite thin film comprises the following steps:
1) CsI, CsBr and PbI2Adding the mixture into an organic solvent, heating to 50-70 ℃, and stirring to obtain a perovskite precursor solution;
2) adding ethyl amine iodide into an organic solvent, heating to 50-70 ℃, and stirring to obtain an ethyl amine iodide solution;
3) and mixing the perovskite precursor solution and the ethyl amine iodide solution, forming a film, and annealing to obtain the perovskite thin film.
Preferably, the CsI, CsBr and PbI are2And the molar ratio of ethyl amine iodide is (0.5-1): (0.5-1): 2: (0.8 to 1.2).
Preferably, PbI is contained in the perovskite precursor solution of step 1)2The concentration of (B) is 0.1mol/L to 0.4 mol/L.
Preferably, the stirring time in the step 1) is 8-10 h.
Preferably, the concentration of the ethyl amine iodide solution in the step 2) is 0.08 mol/L-0.32 mol/L.
Preferably, the stirring time in the step 2) is 4-8 h.
Preferably, the organic solvent described in step 1) and step 2) is a polar organic solvent.
Further preferably, the organic solvent in step 1) and step 2) is at least one of Dimethylformamide (DMF), dimethyl sulfoxide (DMSO), and gamma-butyrolactone (GBL).
Preferably, the film formation in step 3) is spin coating film formation.
Preferably, the spin coater is rotated at 5000 to 7000rmp and the spin coating time is 20 to 40 seconds when spin coating is performed.
Preferably, the annealing in the step 3) is carried out at 70-90 ℃ for 30-50 s.
A perovskite thin film is prepared by the method.
An electroluminescent device comprising the above perovskite thin film.
Preferably, the electroluminescent device can be any one of the following laminated structures:
anode/hole injection layer/hole transport layer/electron blocking layer/light emitting layer/hole blocking layer/electron transport layer/electron injection layer/cathode;
anode/hole injection layer/hole transport layer/light emitting layer/hole blocking layer/electron transport layer/electron injection layer/cathode;
anode/hole injection layer/hole transport layer/electron blocking layer/light emitting layer/electron transport layer/electron injection layer/cathode;
anode/hole injection layer/hole transport layer/light emitting layer/electron transport layer/electron injection layer/cathode;
anode/hole transport layer/light emitting layer/electron transport layer/electron injection layer/cathode;
anode/hole injection layer/hole transport layer/light emitting layer/electron transport layer/cathode;
anode/hole transport layer/light emitting layer/electron transport layer/cathode;
anode/hole transport layer/light emitting layer/cathode;
the light-emitting layer contains the perovskite thin film.
The invention has the beneficial effects that: according to the invention, ethyl amine iodide is added into the perovskite precursor solution and then film formation is carried out, inorganic perovskite crystals with small particle size can be formed under the passivation effect of ethyl amine iodide, and the perovskite thin film with low defect state density, small crystal grain size and high exciton confinement energy is further prepared.
Specifically, the method comprises the following steps:
1) according to the invention, the ethyl amine iodide is added into the perovskite precursor solution and then the film is formed, and the inorganic perovskite crystal with small particle size, good three-dimensional structure, strong quantum confinement effect and large exciton confinement energy can be formed under the passivation effect of the ethyl amine iodide, so that more excellent optical performance can be obtained;
2) the perovskite thin film with excellent performance can be prepared by one-step spin coating without anti-solvent treatment when the perovskite thin film is prepared;
3) the perovskite thin film has very high coverage rate and compactness, shows excellent photoluminescence characteristic and electroluminescence characteristic, and is beneficial to preparing an electroluminescence device with excellent performance;
4) the perovskite electroluminescent device provided by the invention emits deep red light, and the external quantum efficiency of the device is high.
Drawings
FIG. 1 is an absorption spectrum of perovskite thin films of examples 1 to 3 and comparative examples 1 to 2.
FIG. 2 is a photoluminescence spectrum of the perovskite thin films of examples 1 to 3 and comparative examples 1 to 2.
FIG. 3 is a scanning electron microscope image of the perovskite thin film of example 1.
FIG. 4 is a scanning electron micrograph of the perovskite thin film of example 2.
FIG. 5 is a scanning electron micrograph of the perovskite thin film of example 3.
Fig. 6 is a scanning electron microscope image of the perovskite thin film of comparative example 1.
Fig. 7 is a scanning electron microscope image of the perovskite thin film of comparative example 2.
FIG. 8 is a graph showing the grain size distribution of the perovskite thin films of examples 1 to 3 and comparative example 2.
FIG. 9 is an X-ray diffraction pattern of the perovskite thin film of example 2.
Fig. 10 is a current density-voltage-luminous intensity characteristic curve of the perovskite electroluminescent device of application example 1.
Fig. 11 is an external quantum efficiency-current density characteristic curve of the perovskite electroluminescent device of application example 1.
Fig. 12 is a graph showing the luminescence spectrum of the perovskite electroluminescent device of application example 1.
Detailed Description
The invention will be further explained and illustrated with reference to specific examples.
Example 1:
a perovskite thin film is prepared by the following steps:
1) 0.1mmol (25.98mg) of CsI, 0.1mmol (21.28mg) of CsBr and 0.2mmol (92.2mg) of PbI were added2Adding into 1mL Dimethylformamide (DMF), heating to 60 deg.C under nitrogen atmosphere, and stirring for 8 hr to obtain CsPbBr0.5I2.5A perovskite precursor solution;
2) adding 0.16mmol (27.664mg) of ethyl amine iodide into 1mL of Dimethylformamide (DMF), heating to 60 ℃ under nitrogen atmosphere, and stirring for 4h to obtain ethyl amine iodide solution;
3) 200 μ L of CsPbBr0.5I2.5And mixing the perovskite precursor solution and 100 mu L of ethyl amine iodide solution, heating to 50 ℃ in a nitrogen atmosphere, keeping for 12h, carrying out spin coating on the obtained mixed solution, wherein the rotation speed of a spin coating machine is 6000rmp, the spin coating time is 40s, and annealing the obtained film on a heating table at the annealing temperature of 85 ℃ for 40s to obtain the perovskite film.
And (3) performance testing:
the absorption spectrum, photoluminescence spectrum, Scanning Electron Microscope (SEM) spectrum and grain size distribution of the perovskite thin film are shown in fig. 1, 2, 3 and 8, respectively.
As can be seen from fig. 1 and 2: the absorption edge of the film is 694nm, and the photoluminescence peak is 681 nm.
As can be seen from fig. 3 and 8: the perovskite crystal grains have small grain size which is concentrated in 30-50 nm, and the film is flat and compact.
Example 2:
a perovskite thin film is prepared by the following steps:
1) 0.1mmol (25.98mg) of CsI, 0.1mmol (21.28mg) of CsBr and 0.2mmol (92.2mg) of PbI were added2Adding into 1mL Dimethylformamide (DMF), heating to 60 deg.C under nitrogen atmosphere, and stirring for 8 hr to obtain CsPbBr0.5I2.5A perovskite precursor solution;
2) adding 0.2mmol (34.58mg) of ethyl amine iodide into 1mL of Dimethylformamide (DMF), heating to 60 ℃ under nitrogen atmosphere, and stirring for 4h to obtain ethyl amine iodide solution;
3) 200 μ L of CsPbBr0.5I2.5And mixing the perovskite precursor solution and 100 mu L of ethyl amine iodide solution, heating to 50 ℃ in a nitrogen atmosphere, keeping for 12h, carrying out spin coating on the obtained mixed solution, wherein the rotation speed of a spin coating machine is 6000rmp, the spin coating time is 40s, and annealing the obtained film on a heating table at the annealing temperature of 85 ℃ for 40s to obtain the perovskite film.
And (3) performance testing:
the absorption spectrum of the perovskite thin film is shown in fig. 1, the photoluminescence spectrum is shown in fig. 2, the Scanning Electron Microscope (SEM) graph is shown in fig. 4, the grain size distribution is shown in fig. 8, and the X-ray diffraction (XRD) graph is shown in fig. 9.
As can be seen from fig. 1 and 2: the absorption edge of the film was at 692nm and the photoluminescence peak was at 681 nm.
As can be seen from fig. 4 and 8: the perovskite crystal grains have small grain size which is concentrated in 20 nm-40 nm, and the film is flat and compact and has high coverage rate.
As can be seen from fig. 9: perovskite grains are dependent on CsPbI3The crystal form of (a) is a standard three-dimensional structure.
Example 3:
a perovskite thin film is prepared by the following steps:
1) 0.1mmol (25.98mg) of CsI, 0.1mmol (21.28mg) of CsBr and 0.2mmol (92.2mg) of PbI were added2Adding into 1mL Dimethylformamide (DMF), heating to 60 deg.C under nitrogen atmosphere, and stirring for 8 hr to obtain CsPbBr0.5I2.5A perovskite precursor solution;
2) adding 0.24mmol (41.496mg) of ethyl amine iodide into 1mL of Dimethylformamide (DMF), heating to 60 ℃ under nitrogen atmosphere, and stirring for 4h to obtain ethyl amine iodide solution;
3) 200 μ L of CsPbBr0.5I2.5And mixing the perovskite precursor solution and 100 mu L of ethyl amine iodide solution, heating to 50 ℃ in a nitrogen atmosphere, keeping for 12h, carrying out spin coating on the obtained mixed solution, wherein the rotation speed of a spin coating machine is 6000rmp, the spin coating time is 40s, and annealing the obtained film on a heating table at the annealing temperature of 85 ℃ for 40s to obtain the perovskite film.
And (3) performance testing:
the absorption spectrum, photoluminescence spectrum, Scanning Electron Microscope (SEM) spectrum and grain size distribution of the perovskite thin film are shown in fig. 1, 2, 5 and 8, respectively.
As can be seen from fig. 1 and 2: the absorption edge of the film is at 690nm and the photoluminescence peak is at 680 nm.
As can be seen from fig. 5 and 8: the perovskite crystal grains have small grain size which is concentrated in 30-50 nm, and the film is flat and compact and has high coverage rate.
Comparative example 1:
a perovskite thin film is prepared by the following steps:
1) 0.1mmol (25.98mg) of CsI, 0.1mmol (21.28mg) of CsBr and 0.2mmol (92.2mg) of PbI were added2Adding into 1mL Dimethylformamide (DMF), heating to 60 deg.C under nitrogen atmosphere, and stirring for 8 hr to obtain CsPbBr0.5I2.5A perovskite precursor solution;
2) adding 0.08mmol (13.832mg) of ethyl amine iodide into 1mL of Dimethylformamide (DMF), heating to 60 ℃ under nitrogen atmosphere, and stirring for 4h to obtain ethyl amine iodide solution;
3) 200 μ L of CsPbBr0.5I2.5And mixing the perovskite precursor solution and 100 mu L of ethyl amine iodide solution, heating to 50 ℃ in a nitrogen atmosphere, keeping for 12h, carrying out spin coating on the obtained mixed solution, wherein the rotation speed of a spin coating machine is 6000rmp, the spin coating time is 40s, and annealing the obtained film on a heating table at the annealing temperature of 85 ℃ for 40s to obtain the perovskite film.
And (3) performance testing:
the absorption spectrum, photoluminescence spectrum and Scanning Electron Microscope (SEM) spectrum of the perovskite thin film are shown in fig. 1, 2 and 6, respectively.
As can be seen from fig. 1 and 2: the absorption edge of the film is at 696nm, and the photoluminescence peak is at 678 nm.
As can be seen from fig. 6: the particle size of the perovskite crystal grains is very large, statistics on the size of the perovskite crystal grains is not needed, and the film coverage rate is low.
Comparative example 2:
a perovskite thin film is prepared by the following steps:
1) 0.1mmol (25.98mg) of CsI, 0.1mmol (21.28mg) of CsBr and 0.2mmol (92.2mg) of PbI were added2Adding into 1mL Dimethylformamide (DMF), heating to 60 deg.C under nitrogen atmosphere, and stirring for 8 hr to obtain CsPbBr0.5I2.5A perovskite precursor solution;
2) adding 0.32mmol (55.328mg) of ethyl amine iodide into 1mL of Dimethylformamide (DMF), heating to 60 ℃ under nitrogen atmosphere, and stirring for 4h to obtain ethyl amine iodide solution;
3) 200 μ L of CsPbBr0.5I2.5And mixing the perovskite precursor solution and 100 mu L of ethyl amine iodide solution, heating to 50 ℃ in a nitrogen atmosphere, keeping for 12h, carrying out spin coating on the obtained mixed solution, wherein the rotation speed of a spin coating machine is 6000rmp, the spin coating time is 40s, and annealing the obtained film on a heating table at the annealing temperature of 85 ℃ for 40s to obtain the perovskite film.
And (3) performance testing:
the absorption spectrum, photoluminescence spectrum, Scanning Electron Microscope (SEM) spectrum and grain size distribution of the perovskite thin film are shown in fig. 1, 2, 7 and 8, respectively.
As can be seen from fig. 1 and 2: the absorption edge of the film is at 688nm, and the photoluminescence peak value is at 676 nm.
As can be seen from fig. 7 and 8: the particle size of the perovskite crystal grains is larger and is concentrated in 40 nm-60 nm, and the surface of the film has obvious wrinkles.
Application example 1:
a perovskite electroluminescent device takes the perovskite thin film of the embodiment 2 as a luminescent layer of the luminescent device, and the specific device structure is as follows: the preparation method comprises the following steps of (1) ITO (indium tin oxide)/PVK (poly (9-vinyl carbazole))/perovskite/TPBi (1,3, 5-tri (1-phenyl-1H-benzimidazole-2-yl) benzene)/CsF/Al, wherein PVK is used as a hole injection/transport layer, TPBi is used as an electron transport layer, CsF is used as an electron injection layer, and Al is used as a cathode:
ultrasonically cleaning an ITO glass substrate by using isopropanol, acetone, washing liquid and deionized water in sequence, treating for 2min by using oxygen plasma, spin-coating PVK on the ITO glass substrate in a glove box filled with nitrogen, then heating and annealing at 150 ℃ for 15min, after cooling, spin-coating the mixed solution obtained in the step 3) in the embodiment 2 on the PVK at the rotating speed of 6000rmp for 40s by using a spin-coating machine, then annealing the film on a heating table at the annealing temperature of 85 ℃ for 40s, cooling and transferring the film into vacuum evaporation equipment, and when the vacuum degree is 3 multiplied by 10-4And when the thickness is less than Pa, sequentially evaporating TPBi with the thickness of 55nm, CsF with the thickness of 1.2nm and Al with the thickness of 120nm to obtain the perovskite electroluminescent device.
And (3) performance testing:
a positive bias is applied between the ITO and the metal electrode, the characteristics of the device are tested under different currents, and the current density-voltage-luminous intensity curve, the external quantum efficiency-current density characteristic curve and the luminous spectrum of the obtained electroluminescent device are shown in figures 10, 11 and 12 respectively.
As can be seen from fig. 10 to 12: the starting voltage of the perovskite electroluminescent device is 2.7V, and the maximum brightness is 320cd/m2The maximum external quantum efficiency is 7.0 percent, the light-emitting wavelength is 680nm, and the color coordinate is (0.71, 0.28), so that the perovskite device is one of the currently better deep red perovskite devices.
The above embodiments are preferred embodiments of the present invention, but the present invention is not limited to the above embodiments, and any other changes, modifications, substitutions, combinations, and simplifications which do not depart from the spirit and principle of the present invention should be construed as equivalents thereof, and all such changes, modifications, substitutions, combinations, and simplifications are intended to be included in the scope of the present invention.
Claims (10)
1. The preparation method of the perovskite thin film is characterized by comprising the following steps:
1) mixing CsI, CsBr and PbI2Mixing to prepare a perovskite precursor solution;
2) preparing an ethyl amine iodide solution;
3) and mixing the perovskite precursor solution and the ethyl amine iodide solution, forming a film, and annealing to obtain the perovskite thin film.
2. The method for producing a perovskite thin film according to claim 1, comprising the steps of:
1) mixing CsI, CsBr and PbI2Adding the mixture into an organic solvent, heating to 50-70 ℃, and stirring to obtain a perovskite precursor solution;
2) adding ethyl amine iodide into an organic solvent, heating to 50-70 ℃, and stirring to obtain an ethyl amine iodide solution;
3) and mixing the perovskite precursor solution and the ethyl amine iodide solution, forming a film, and annealing to obtain the perovskite thin film.
3. The method for producing a perovskite thin film according to claim 1 or 2, characterized in that: the CsI, CsBr and PbI2And the molar ratio of ethyl amine iodide is (0.5-1): (0.5-1): 2: (0.8 to 1.2).
4. The method for producing a perovskite thin film according to claim 3, characterized in that: step 1) PbI in the perovskite precursor solution2The concentration of (B) is 0.1mol/L to 0.4 mol/L.
5. The method for producing a perovskite thin film according to claim 3, characterized in that: the concentration of the ethyl amine iodide solution in the step 2) is 0.08-0.32 mol/L.
6. The method for producing a perovskite thin film according to claim 1 or 2, characterized in that: and 3) the film forming is spin coating film forming.
7. The method for producing a perovskite thin film according to claim 1 or 2, characterized in that: and 3) annealing at 70-90 ℃ for 30-50 s.
8. A perovskite thin film characterized by: prepared by the method of any one of claims 1 to 7.
9. An electroluminescent device, characterized by: comprising the perovskite thin film as defined in claim 8.
10. The device of claim 9, wherein the electroluminescent device can be any one of the following stacked structures:
anode/hole injection layer/hole transport layer/electron blocking layer/light emitting layer/hole blocking layer/electron transport layer/electron injection layer/cathode;
anode/hole injection layer/hole transport layer/light emitting layer/hole blocking layer/electron transport layer/electron injection layer/cathode;
anode/hole injection layer/hole transport layer/electron blocking layer/light emitting layer/electron transport layer/electron injection layer/cathode;
anode/hole injection layer/hole transport layer/light emitting layer/electron transport layer/electron injection layer/cathode;
anode/hole transport layer/light emitting layer/electron transport layer/electron injection layer/cathode;
anode/hole injection layer/hole transport layer/light emitting layer/electron transport layer/cathode;
anode/hole transport layer/light emitting layer/electron transport layer/cathode;
anode/hole transport layer/light emitting layer/cathode;
the light-emitting layer comprises the perovskite thin film as set forth in claim 8.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114163990A (en) * | 2021-11-19 | 2022-03-11 | 苏州大学 | Metal halogen perovskite thin film with high crystallization quality, preparation method thereof and photoelectric detector prepared from metal halogen perovskite thin film |
| CN115536056A (en) * | 2022-09-29 | 2022-12-30 | 无锡极电光能科技有限公司 | Perovskite quantum dot and synthesis method and application thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109860428A (en) * | 2018-12-17 | 2019-06-07 | 西安交通大学 | A kind of preparation method of high stability feux rouges two dimension perovskite thin film |
| CN110643225A (en) * | 2019-10-25 | 2020-01-03 | 华中科技大学 | Perovskite ink for electrofluid ink-jet printing colorful luminous display and preparation thereof |
| CN111446385A (en) * | 2020-05-21 | 2020-07-24 | 中国科学技术大学 | Method for preparing perovskite light-emitting diode based on air knife and blade coating process |
| CN111525048A (en) * | 2020-04-30 | 2020-08-11 | 广东聚华印刷显示技术有限公司 | Composite material, preparation method thereof and light-emitting diode |
-
2020
- 2020-09-16 CN CN202010972585.9A patent/CN112259701A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109860428A (en) * | 2018-12-17 | 2019-06-07 | 西安交通大学 | A kind of preparation method of high stability feux rouges two dimension perovskite thin film |
| CN110643225A (en) * | 2019-10-25 | 2020-01-03 | 华中科技大学 | Perovskite ink for electrofluid ink-jet printing colorful luminous display and preparation thereof |
| CN111525048A (en) * | 2020-04-30 | 2020-08-11 | 广东聚华印刷显示技术有限公司 | Composite material, preparation method thereof and light-emitting diode |
| CN111446385A (en) * | 2020-05-21 | 2020-07-24 | 中国科学技术大学 | Method for preparing perovskite light-emitting diode based on air knife and blade coating process |
Non-Patent Citations (2)
| Title |
|---|
| HSIANG-LIN HSU ET AL.: "High-performance and high-durability perovskite photovoltaic devices prepared using ethylammonium iodide as an additive", 《J. MATER. CHEM. A》 * |
| 黎振超等: "有机添加剂在金属卤化钙钛矿发光二极管中的应用", 《物理学报》 * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114163990A (en) * | 2021-11-19 | 2022-03-11 | 苏州大学 | Metal halogen perovskite thin film with high crystallization quality, preparation method thereof and photoelectric detector prepared from metal halogen perovskite thin film |
| CN115536056A (en) * | 2022-09-29 | 2022-12-30 | 无锡极电光能科技有限公司 | Perovskite quantum dot and synthesis method and application thereof |
| CN115536056B (en) * | 2022-09-29 | 2024-03-01 | 无锡极电光能科技有限公司 | Perovskite quantum dot and synthesis method and application thereof |
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