CN114883227A - Semiconductor wet process production facility - Google Patents

Semiconductor wet process production facility Download PDF

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Publication number
CN114883227A
CN114883227A CN202210670627.2A CN202210670627A CN114883227A CN 114883227 A CN114883227 A CN 114883227A CN 202210670627 A CN202210670627 A CN 202210670627A CN 114883227 A CN114883227 A CN 114883227A
Authority
CN
China
Prior art keywords
return pipe
liquid
wet
circulation return
filter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202210670627.2A
Other languages
Chinese (zh)
Inventor
王文正
杨云春
郭鹏飞
陆原
张拴
王晨星
范建国
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Silex Microsystems Technology Beijing Co ltd
Original Assignee
Silex Microsystems Technology Beijing Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Silex Microsystems Technology Beijing Co ltd filed Critical Silex Microsystems Technology Beijing Co ltd
Priority to CN202210670627.2A priority Critical patent/CN114883227A/en
Publication of CN114883227A publication Critical patent/CN114883227A/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/40—Heating elements having the shape of rods or tubes
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B2203/00—Aspects relating to Ohmic resistive heating covered by group H05B3/00
    • H05B2203/021—Heaters specially adapted for heating liquids
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

The application discloses semiconductor wet process production facility includes: the wet tank body is provided with a liquid inlet; the circulating return pipe is communicated with the liquid inlet; a filter disposed on the circulation return pipe; and the in-line heater is arranged on the circulation return pipe and is positioned between the circulation return pipe and the filter. According to the semiconductor wet production equipment, in the circulating reflux process of the etching liquid and/or the cleaning liquid, the etching liquid and/or the cleaning liquid sequentially passes through the filter and the online heater through the circulating reflux pipe, the impurities in the etching liquid and/or the cleaning liquid are filtered out by the filter, and then the etching liquid and/or the cleaning liquid flows back to the wet tank body after being heated by the online heater.

Description

Semiconductor wet process production facility
Technical Field
The application belongs to the technical field of semiconductor production equipment, and particularly relates to semiconductor wet production equipment.
Background
In the preparation process of the semiconductor, the wet process mainly comprises wet etching and wet cleaning, and in the wet processes such as the wet etching and the wet cleaning, etching liquid and/or cleaning liquid need to be heated quickly and kept clean due to special process requirements. In the related art, during the circulation process of etching liquid and/or cleaning liquid in semiconductor wet production equipment, the etching liquid and/or the cleaning liquid is heated by an online heater and then filtered by a filter, so that the online heater is damaged or the equipment is down due to the blockage or failure of a filter element of the filter.
Disclosure of Invention
The method aims to solve the technical problem that an online heater is easy to damage or equipment is down due to blockage or failure of a filter in the circulation process of etching liquid and/or cleaning liquid in semiconductor wet production equipment at least to a certain extent. Therefore, the application provides semiconductor wet production equipment.
The embodiment of the application provides a semiconductor wet process production equipment, semiconductor wet process production equipment includes:
the wet tank body is provided with a liquid inlet;
the circulating return pipe is communicated with the liquid inlet;
a filter disposed on the circulation return pipe;
and the in-line heater is arranged on the circulation return pipe and is positioned between the circulation return pipe and the filter.
In some embodiments, the wet tank comprises:
the inner groove is provided with the liquid inlet and an overflow port, and the liquid inlet is communicated with one end of the circulating return pipe; and the combination of (a) and (b),
and the outer tank is arranged on the outer side of the inner tank and is used for receiving the etching liquid and/or the cleaning liquid overflowing from the overflow port, and the outer tank is provided with a liquid discharge port which is communicated with the other end of the circulation return pipe.
In some embodiments, the semiconductor wet process production apparatus further comprises:
and the flowmeter is arranged on the circulating return pipe and is positioned between the filter and the online heater.
In some embodiments, the semiconductor wet process production apparatus further comprises:
and the circulating pump is arranged on the circulating return pipe.
In some embodiments, the in-line heater is heated using a quartz heating tube.
In some embodiments, the in-line heater comprises a shell tube and a quartz heating tube arranged in the shell tube, and two ends of the shell tube are respectively communicated with the circulation return tube.
In some embodiments, the quartz heating tube is disposed in a coil within the tube shell.
In some embodiments, an insulating layer is disposed outside the pumparound tube.
In some embodiments, the semiconductor wet process production apparatus further comprises:
and the temperature detector is arranged on the circulating return pipe and is positioned between the online heater and the liquid inlet.
In some embodiments, the semiconductor wet process production apparatus further comprises:
and the controller is in signal connection with the online heater and the flowmeter.
The embodiment of the application has at least the following beneficial effects:
according to the semiconductor wet production equipment, in the circulating reflux process of the etching liquid and/or the cleaning liquid, the etching liquid and/or the cleaning liquid sequentially passes through the filter and the online heater through the circulating reflux pipe, the impurities in the etching liquid and/or the cleaning liquid are filtered out by the filter at first, then the etching liquid and/or the cleaning liquid flows back to the wet tank body after being heated by the online heater, and the online heater is positioned behind the filter, so that the phenomenon that the online heater is damaged due to blockage caused by the fact that the impurities enter the online heater is avoided, the fault rate of the equipment is reduced, the capacity of the equipment is improved, and the technological requirements of micro high-precision electronic components can be met.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
Fig. 1 shows a schematic structural diagram of a semiconductor wet production device in an embodiment of the present application.
Reference numerals:
100. a wet tank body; 110. a liquid inlet; 200. a circulating return pipe; 300. a filter; 400. an in-line heater; 500. a flow meter; 600. and a circulating pump.
Detailed Description
The technical solutions in the embodiments of the present application will be described clearly and completely with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only some embodiments of the present application, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
Moreover, the present application may repeat reference numerals and/or letters in the various examples, such repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed. In addition, examples of various specific processes and materials are provided herein, but one of ordinary skill in the art may recognize applications of other processes and/or use of other materials.
The application is described below with reference to specific embodiments in conjunction with the following drawings:
in the preparation process of the semiconductor, the wet process mainly comprises wet etching and wet cleaning, and in the wet processes such as the wet etching and the wet cleaning, etching liquid and/or cleaning liquid need to be heated quickly and kept clean due to special process requirements. Therefore, in the related art, in the circulation process of the etching solution and/or the cleaning solution in the semiconductor wet production equipment, the online heater 400 and the filter 300 are often arranged in the circulation pipeline to respectively heat and filter the etching solution and/or the cleaning solution in the circulation pipeline, but the etching solution and/or the cleaning solution in the circulation pipeline are often heated by the online heater 400 and filtered by the filter 300, but the online heater 400 is damaged or the equipment is down due to the fact that the filter 300 is blocked or not effective, so that the utilization rate of a machine table is greatly increased, and the capacity of semiconductor preparation is reduced.
As shown in fig. 1, the semiconductor wet process production apparatus provided in the embodiment of the present application includes:
a wet tank body 100 provided with a liquid inlet 110;
a circulation return pipe 200 communicated with the liquid inlet 110;
a filter 300 provided on the circulation return pipe 200;
the in-line heater 400 is provided on the circulation return pipe 200 and is located between the circulation return pipe 200 and the filter 300.
In this embodiment, the wet tank 100 is a working chamber of the semiconductor wet production apparatus, and when the semiconductor wet production apparatus is a wet etching apparatus, the wet tank 100 is an etching chamber used for performing wet etching on a wafer to be etched, and etching liquid is contained in the etching chamber, and the structure of the etching chamber can be adaptively adjusted according to the requirements of the wet etching, for example, a corresponding platform for bearing the wafer is provided; when the semiconductor wet process production equipment is wet process cleaning equipment, the wet process tank body 100 is a cleaning chamber used for cleaning a wafer to be cleaned, cleaning liquid is contained in the cleaning chamber, and the structure of the cleaning chamber can be adaptively adjusted according to the requirements of wet process cleaning, for example, a corresponding nozzle is arranged to spray the cleaning liquid. In this embodiment, the wet tank 100 is made of a corrosion-resistant material, such as ceramic, or a corrosion-resistant ceramic coating is coated on the inner wall of the wet tank 100, so as to prevent the etching solution/cleaning solution contained in the wet tank 100 from corroding the inner wall of the wet tank 100 to contaminate the etching solution/cleaning solution, and further affect the service life of the wet tank 100.
In the present embodiment, the circulation return pipe 200 is connected to the liquid inlet 110 of the wet tank 100 to circulate the etching solution/cleaning solution back to the wet tank 100. The circulation return pipe 200 is preferably made of a corrosion-resistant material or coated with a corrosion-resistant coating on the inner wall, as in the wet tank 100, so as to prevent the etching solution/cleaning solution from corroding the circulation return pipe 200 to pollute the etching solution/cleaning solution and influence the service life of the circulation return pipe 200.
In this embodiment, the filter 300 and the in-line heater 400 are sequentially disposed on the circulation return pipe 200, and the etching solution/cleaning solution flows from the filter 300 to the in-line heater 400 through the circulation return pipe 200, the filter 300 is used to filter impurities in the etching solution/cleaning solution in the circulation return pipe 200, and the in-line heater 400 is used to heat the etching solution/cleaning solution in the circulation return pipe 200, so that the temperature of the etching solution/cleaning solution reaches the working temperature of the wet tank 100.
In the semiconductor wet production equipment, in the circulating reflux process of the etching liquid and/or the cleaning liquid, the etching liquid and/or the cleaning liquid sequentially passes through the filter 300 and the online heater 400 through the circulating reflux pipe 200, the impurities in the etching liquid/cleaning liquid are filtered by the filter 300 at first, and then the etching liquid/cleaning liquid is heated by the online heater 400 and then flows back to the wet tank body 100. The semiconductor wet process production equipment of the embodiment changes the circulation flow aiming at the heating circulation mode of the wet process tank body 100, so that the online heater 400 is not damaged after the online heater 400 is placed in the filter 300 and the filter element of the filter 300 is blocked or does not take effect.
As an alternative embodiment, the wet tank 100 includes:
an inner tank having a liquid inlet 110 and an overflow port, the liquid inlet being communicated with one end of the circulation return pipe 200; and the combination of (a) and (b),
and the outer tank is arranged on the outer side of the inner tank and is used for receiving the etching liquid and/or the cleaning liquid overflowing from the overflow port, and the outer tank is provided with a liquid discharge port which is communicated with the other end of the circulation return pipe 200. For example, in a semiconductor wet process production facility, the wet process tank body 100 includes an inner tank and an outer tank that is fitted around the outside of the inner tank. A liquid inlet 100 is arranged at the bottom of the inner groove, and one end of a circulating return pipe 200 penetrates through the outer groove to be communicated with the liquid inlet; the edge of the inner groove is also provided with an overflow port, and etching liquid and/or cleaning liquid in the inner groove can overflow into the outer groove through the overflow port; correspondingly, the outer tank is provided with a liquid discharge port which is communicated with the other end of the circulation return pipe 200. In this embodiment, the inner tank and the outer tank of the wet tank body 100 may be communicated through the circulation return pipe 200, and the inner tank and the outer tank are communicated through the overflow port, so that the etching liquid and/or the cleaning liquid may flow back and forth between the inner tank and the outer tank, and impurities such as particles mixed therein may be filtered out through the filter 300 when the etching liquid and/or the cleaning liquid flows in the circulation return pipe 200, and the etching liquid and/or the cleaning liquid may be heated to the working temperature by the in-line heater 400, so that the cleaning degree and the working temperature may be maintained after the etching liquid and/or the cleaning liquid flows back into the wet tank body 100, so as to perform the etching reaction or the cleaning reaction in the wet tank body 100.
In other embodiments, the liquid inlet 110 may be located at other positions in the inner tank, for example, the liquid inlet is located at the top of the inner tank, and the etching liquid and/or the cleaning liquid in the circulation return pipe 200 is driven by the circulation pump to enter the inner tank through the top of the inner tank.
In this embodiment, when the semiconductor wet etching apparatus is a wet etching apparatus, it is preferable that the liquid inlet 110 of the wet tank body 100 is opened at the bottom of the inner tank of the wet tank body 100 so that the etching liquid smoothly flows back into the wet tank body 100 through the liquid inlet 110, and correspondingly, the liquid outlet is opened at the bottom of the outer tank of the wet tank body 100 so that the etching liquid is automatically discharged into the circulation return pipe 200 through the liquid outlet under the action of gravity.
In other embodiments, when the semiconductor wet method equipment is wet method cleaning equipment, preferably, the liquid inlet 110 of the wet method tank body 100 may be arranged at the top of the inner tank of the wet method tank body 100, and the cleaning liquid flows back to the top of the inner tank of the wet method tank body 100 through the circulation return pipe 200 and is sprayed onto the surface of the wafer in the wet method tank body 100 through a spraying device or the like. Accordingly, a drain port is opened at the bottom or the middle-lower portion of the outer tank of the wet tank body 100 so that the etching liquid is drained into the circulation return pipe 200 through the drain port.
As an alternative embodiment, as shown in fig. 1, the semiconductor wet process manufacturing apparatus of the present embodiment further includes a flow meter 500, and the flow meter 500 is disposed on the circulation return pipe 200 and between the filter 300 and the in-line heater 400. The flow meter 500 is used for monitoring the flow rate of the etching liquid/cleaning liquid in the circulation return pipe 200 in real time, so that the flow rate of the etching liquid/cleaning liquid meets the flow rate requirement of the semiconductor wet method production equipment for the etching liquid/cleaning liquid. Further, in the present embodiment, the etching solution/cleaning solution flows through the filter 300, the flow meter 500 and the in-line heater 400 in sequence, and even if the flow meter 500 fails to detect the flow rate of the etching solution/cleaning solution in the circulation return pipe 200 in time after the in-line heater 400 is located in the filter 300, the normal use of the in-line heater 400 is not affected or the in-line heater 400 is not damaged.
As an alternative, as shown in fig. 1, the semiconductor wet process production equipment of the embodiment further comprises a circulation pump 600, wherein the circulation pump 600 is disposed on the circulation return pipe 200 and is used for returning the etching solution/cleaning solution to the wet process tank body 100 through the circulation return pipe 200. Preferably, the circulation pump 600 employs a membrane pump, which separates the etching solution/cleaning solution from the plunger and the pump cylinder by means of a membrane, thereby protecting the plunger and the pump cylinder.
As an alternative embodiment, the in-line heater 400 of the present embodiment is heated by a quartz heating tube. The quartz heating pipe has the advantages of high electric-heat conversion efficiency, fast temperature rise, small thermal inertia, high temperature resistance, corrosion resistance, good stability of thermochemical performance, long service life and high insulating strength, and is very suitable for heating etching liquid/cleaning liquid and other liquids with certain corrosivity.
As an alternative embodiment, the in-line heater 400 of the present embodiment includes a shell tube and a quartz heating tube disposed in the shell tube, both ends of the shell tube being respectively communicated with the circulation return pipe 200. The etching liquid/cleaning liquid in the circulation reflux pipe 200 is made to enter the tube shell through the tube shell communicating with the circulation reflux pipe 200, and then to contact with the quartz heating pipe arranged in the tube shell to be heated by the quartz heating pipe. In the embodiment, the quartz heating pipe can be directly contacted with the etching liquid/cleaning liquid to be heated, and a heating mode of direct heating is adopted, so that the heating efficiency is high; and the quartz heating pipe has the characteristics of corrosion resistance and stable thermochemical property, is not easy to be corroded by etching liquid/cleaning liquid, is not easy to damage and has long service life. Further preferably, in order to increase the contact area between the quartz heating tube and the etching liquid/cleaning liquid to be heated and increase the heating efficiency, the quartz heating tube of the embodiment is spirally arranged in the tube shell.
In other embodiments, the in-line heater 400 may also adopt other structural types to realize the in-line heating function for the etching solution/cleaning solution in the circulation return pipe 200.
As an alternative embodiment, the circulation return pipe 200 of the present embodiment is externally provided with an insulating layer. By arranging the heat insulating layer outside the circulation return pipe 200, the etching liquid/cleaning liquid heated by the online heater 400 can be kept at the working temperature and enter the wet tank body 100 by improving the heat insulating effect of the circulation return pipe 200. Further preferably, the wet tank 100 is also provided with a heat insulation structure to ensure that the etching solution/cleaning solution in the wet tank 100 is kept at the working temperature.
As an alternative embodiment, the semiconductor wet process manufacturing apparatus of the present embodiment further comprises a temperature detector disposed on the circulation return pipe 200 and between the in-line heater 400 and the liquid inlet 110. In this embodiment, the temperature detector can be an electronic temperature detector for detecting the temperature of the etching solution/cleaning solution in the circulation return pipe 200.
As an alternative embodiment, the semiconductor wet process manufacturing apparatus further comprises a controller in signal communication with the in-line heater 400 and the flow meter 500. Further preferably, the controller can be connected with signals of the circulating pump 600, the temperature detector and the like. For example, the controller of the present embodiment is in signal connection with the preceding heater, the flow meter 500, the circulation pump 600, and the temperature detector, respectively.
The controller can preset the working temperature of the etching liquid/cleaning liquid, heat the etching liquid/cleaning liquid by controlling the online heater 400, further obtain the real-time temperature of the heated etching liquid/cleaning liquid by the temperature detector, and judge the heating effect of the online heater 400 according to the obtained real-time temperature, so that the real-time temperature of the etching liquid/cleaning liquid can reach the working temperature by adjusting the flow of the circulating pump 600, the heating power of the online heater 400 and other measures, and the online control of the working temperature of the etching liquid/cleaning liquid is realized.
In this application, unless expressly stated or limited otherwise, the first feature "on" or "under" the second feature may comprise direct contact of the first and second features, or may comprise contact of the first and second features not directly but through another feature in between. Also, the first feature being "on," "above" and "over" the second feature includes the first feature being directly on and obliquely above the second feature, or merely indicating that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature includes the first feature being directly under and obliquely below the second feature, or simply meaning that the first feature is at a lesser elevation than the second feature.
In the description of the present application, it is to be understood that the terms "center," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise" indicate orientations or positional relationships based on the orientation or positional relationships illustrated in the drawings, and are used merely for convenience in describing the present application and for simplicity in description, and do not indicate or imply that the referenced device or element must have a particular orientation, be constructed in a particular orientation, and be operated, and therefore should not be considered as limiting the present application.
It should be noted that all the directional indications in the embodiments of the present application are only used to explain the relative position relationship, the motion situation, and the like between the components in a certain posture, and if the certain posture is changed, the directional indication is changed accordingly.
In this application, unless expressly stated or limited otherwise, the terms "connected," "secured," and the like are to be construed broadly, and for example, "secured" may be a fixed connection, a removable connection, or an integral part; can be mechanically or electrically connected; they may be directly connected or indirectly connected through intervening media, or they may be interconnected within two elements or in a relationship where two elements interact with each other unless otherwise specifically limited. The specific meaning of the above terms in the present application can be understood by those of ordinary skill in the art as appropriate.
In addition, descriptions in this application as to "first", "second", etc. are for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicit to the number of technical features indicated. Thus, features defined as "first", "second", may explicitly or implicitly include one or more of the described features. In the description of the present application, "a plurality" means two or more unless specifically limited otherwise.
In the description herein, reference to the description of the term "one embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the application. In this specification, the schematic representations of the terms used above are not necessarily intended to refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, various embodiments or examples described in this specification can be combined and combined by those skilled in the art.
In addition, technical solutions between various embodiments may be combined with each other, but must be realized by a person skilled in the art, and when the technical solutions are contradictory or cannot be realized, such a combination should not be considered to exist, and is not within the protection scope of the present application.
While embodiments of the present application have been shown and described, it will be understood by those of ordinary skill in the art that: numerous changes, modifications, substitutions and alterations can be made to the embodiments without departing from the principles and spirit of the application, the scope of which is defined by the claims and their equivalents.

Claims (10)

1. A semiconductor wet process production apparatus, characterized by comprising:
the wet tank body (100) is provided with a liquid inlet (110);
a circulating return pipe (200) communicated with the liquid inlet (110);
a filter (300) provided on the circulation return pipe (200);
an in-line heater (400) on the circulation return pipe (200) between the circulation return pipe (200) and the filter (300).
2. The semiconductor wet production equipment according to claim 1, wherein the wet tank (100) comprises:
the inner groove is provided with the liquid inlet (110) and an overflow port, and the liquid inlet (110) is communicated with one end of the circulating return pipe (200); and the combination of (a) and (b),
and the outer tank is arranged on the outer side of the inner tank and is used for receiving the etching liquid and/or the cleaning liquid overflowing from the overflow port, and the outer tank is provided with a liquid discharge port which is communicated with the other end of the circulation return pipe (200).
3. The semiconductor wet process production apparatus of claim 1, further comprising:
a flow meter (500) disposed on the circulation return pipe (200) between the filter (300) and the in-line heater (400).
4. The semiconductor wet process production apparatus of claim 1, further comprising:
a circulation pump (600) disposed on the circulation return pipe (200).
5. The semiconductor wet production apparatus according to any one of claims 1 to 4, wherein the in-line heater (400) is heated using a quartz heating tube.
6. A semiconductor wet process manufacturing apparatus according to claim 5, wherein said in-line heater (400) comprises a case and a quartz heating tube provided in said case, both ends of said case being respectively communicated with said circulation return pipe (200).
7. The semiconductor wet production apparatus of claim 6, wherein the quartz heating tube is arranged in a coil shape in the tube housing.
8. A semiconductor wet processing apparatus according to claim 5, wherein said circulation return pipe (200) is externally provided with an insulating layer.
9. The semiconductor wet process production apparatus according to claim 5, further comprising:
and the temperature detector is arranged on the circulating return pipe (200) and is positioned between the online heater (400) and the liquid inlet (110).
10. The semiconductor wet process production apparatus according to claim 5, further comprising:
a controller in signal communication with the in-line heater (400) and the flow meter (500).
CN202210670627.2A 2022-06-14 2022-06-14 Semiconductor wet process production facility Pending CN114883227A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202210670627.2A CN114883227A (en) 2022-06-14 2022-06-14 Semiconductor wet process production facility

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202210670627.2A CN114883227A (en) 2022-06-14 2022-06-14 Semiconductor wet process production facility

Publications (1)

Publication Number Publication Date
CN114883227A true CN114883227A (en) 2022-08-09

Family

ID=82681036

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202210670627.2A Pending CN114883227A (en) 2022-06-14 2022-06-14 Semiconductor wet process production facility

Country Status (1)

Country Link
CN (1) CN114883227A (en)

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