CN114878604A - Ray detector, detection method and detection system - Google Patents
Ray detector, detection method and detection system Download PDFInfo
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- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
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Abstract
The invention discloses a ray detector, a detection method and a detection system. The radiation detector includes: the scintillator comprises N scintillation layers which are arranged in a stacking mode along the incident direction of rays, the energy of scintillation materials of each scintillation layer increases progressively along the incident direction of the rays, and N is larger than or equal to 2; a photoelectric sensor including photoelectric sensing layers formed on the silicon substrate and disposed corresponding to the respective scintillation layers, each photoelectric sensing layer including a plurality of photodiodes for detecting the corresponding scintillation material to output an electrical signal; the light-emitting surface of each scintillation layer of the scintillator faces the photosensitive surface of the corresponding photodiode of the photoelectric sensor, and the light-emitting surface and the photosensitive surface are parallel to the incident direction of the ray. The invention detects the incident ray and outputs the electric signal through the stacked scintillators of at least two scintillating materials and the corresponding photoelectric sensors, thereby realizing the simultaneous detection of the measured object by the scintillating materials with various energies and effectively improving the detection precision.
Description
Technical Field
The invention relates to a ray detector, a detection method adopting the ray detector and a corresponding detection system, belonging to the technical field of radiation imaging.
Background
In the prior art, an object is generally irradiated with X-rays of photons having continuous energy lines, partial energy is absorbed by a substance, and the characteristic that partial energy penetrates is utilized to detect the rays. However, for collecting the X-ray passing through the object to be measured by only selecting one type of scintillator material, the shape and contour of the object to be measured can be recognized. However, because the thickness and density of the object to be detected can affect the total number of photons in the radiation after passing through the object, the single-energy detection technology cannot achieve the effect of substance identification.
Different scintillator materials or scintillators of different thicknesses of the same material can absorb different ray energies. Thus, the simultaneous use of multiple scintillator materials allows discrimination between the number of photons of different energies in the same beam of radiation that passes through the object being measured. The absorption quantity of the substances with different densities to photons with different energies is different, and the element types of the substances can be finally determined by identifying the quantity of the photons with various energies in the rays.
For example, in chinese patent No. ZL 200910088624.2, a dual-energy X-ray detector is disclosed. It includes first photoelectric detection device, scintillator and second photoelectric detection device in proper order on the incident direction of X ray, and first photoelectric detection device and second photoelectric detection device set up respectively on two terminal surfaces around the scintillator, X ray gets into the scintillator after passing first photoelectric detection device, the scintillator converts the X ray incidenting wherein into visible light, and first photoelectric detection device and second photoelectric detection device are used for receiving the visible light that the scintillator sent and convert it into the signal of telecommunication. The dual-energy X-ray detector can measure the relative difference between the low-energy part and the high-energy part in the energy spectrum of the X-ray penetrating through the object, thereby providing the basis for material identification.
Disclosure of Invention
The invention aims to provide a ray detector which can effectively improve the ray detection precision.
Another technical problem to be solved by the present invention is to provide a detection method using the radiation detector.
The invention also aims to provide a detection system adopting the ray detector.
According to a first aspect of embodiments of the present invention, there is provided a radiation detector including:
the scintillator comprises N scintillation layers which are arranged in a stacking mode along the ray incidence direction, the energy of scintillation materials of each scintillation layer increases progressively along the ray incidence direction, and N is larger than or equal to 2; and
a photoelectric sensor including photoelectric sensing layers formed on the silicon substrate and disposed corresponding to the respective scintillation layers, each photoelectric sensing layer including a plurality of photodiodes for detecting the corresponding scintillation material to output an electrical signal; the light-emitting surface of each scintillation layer faces to the corresponding photosensitive surface of the photodiode of the photoelectric sensor, and the light-emitting surface and the photosensitive surface are parallel to the ray incidence direction.
Preferably, each scintillation layer of the ray detector comprises a first defining layer and M columns of lattices defined by the first defining layer and arranged equidistantly, each lattice is provided with a corresponding scintillation material, the number of the lattices is inversely proportional to the distance between two adjacent lattices, and the length of the lattice of each scintillation layer relative to the incident direction of the ray is increased; each photoelectric sensing layer comprises a second defining layer and M columns of photodiodes defined by the second defining layer and corresponding to the crystal lattices in a one-to-one mode.
Preferably, the radiation detector further comprises an anti-scatter grid arranged on one side of the scintillator close to the radiation source, wherein the anti-scatter grid comprises a shielding area and M hollow-out areas defined by the shielding area; the hollow-out areas are arranged corresponding to the crystal lattices of each scintillation layer of the scintillator and are used for enabling rays incident according to a preset direction to be incident into the crystal lattices of each scintillation layer; the shielding region is used for absorbing rays except for rays incident according to a predetermined direction.
Preferably, the scintillator of the ray detector further comprises a filter plate arranged between two adjacent scintillation layers; the materials of the filter plates are the same or different; the lengths of the filter plates relative to the incidence direction of the ray are the same or different.
Preferably, the radiation detector further comprises an identification circuit arranged on one side of the photoelectric sensor far away from the scintillator, and the identification circuit comprises an analog-to-digital converter chip, a field programmable gate array, a power circuit and a communication interface.
Preferably, the radiation detector further comprises a carrier plate, the identification circuit is arranged on the carrier plate at a position where the identification circuit does not interfere with the detector, and the photoelectric sensor and the scintillator are sequentially stacked on the other side of the carrier plate; the carrier plate is any one of a PCB substrate, a ceramic substrate and a rigid-flex board.
Preferably, the radiation detector further comprises:
a casing provided with an opening corresponding to the scintillator to receive the incident ray; and a radiation protection layer disposed inside the cabinet and surrounding the opening to prevent the radiation from being incident.
According to a second aspect of the embodiments of the present invention, there is provided a detection method implemented by using the above-mentioned radiation detector, including the following steps:
the method comprises the following steps that rays sequentially enter N scintillation layers of a scintillator and are respectively converted into corresponding visible light, the energy of scintillation materials of the scintillation layers is increased progressively along the ray incidence direction, wherein N is larger than or equal to 2;
the photodiodes of each photoelectric sensing layer of the photoelectric sensor respectively detect the visible light output by the corresponding scintillation layer and convert the visible light into an electric signal for output.
Preferably, the radiation detector further includes an anti-scatter grid disposed on a side of the scintillator close to the radiation source, the anti-scatter grid including a shielding region and M hollow-out regions defined by the shielding region, and before the radiation sequentially enters the N scintillation layers of the scintillator and is respectively converted into corresponding visible light, the detection method further includes:
the hollow-out region transmits rays incident in a predetermined direction, and the shielding region absorbs rays except the rays incident in the predetermined direction.
According to a third aspect of embodiments of the present invention, there is provided a detection system, including the above-mentioned radiation detector.
Preferably, the detection system is an ore screening system comprising a hopper, a radiation source, a classifier, a first ore chute, a second ore chute, and the radiation detector described above, wherein
The feeding hopper is used for receiving and sequentially outputting ores to be detected;
the ray source is used for emitting rays;
the ray detector is used for receiving rays for detecting the ore to be detected, converting the rays into visible light through each scintillation layer, and sensing the visible light and outputting an electric signal by each photodiode of the photoelectric sensing layer of the corresponding photoelectric sensor;
and the classifier is used for respectively outputting the ores to be detected to the first ore groove or the second ore groove according to the electric signals.
Preferably, the detection system is an industrial accelerator including the radiation detector.
Compared with the prior art, the invention converts incident rays into visible light respectively through the scintillators of at least two layers of stacked scintillating materials, and simultaneously senses the visible light and outputs current through the photodiodes of the photoelectric sensing layers which are integrated by the photoelectric sensors and correspond to the scintillating materials, thereby realizing that the scintillating materials with various energies simultaneously detect the object to be detected and effectively improving the detection precision. The photoelectric sensor integrates various scintillating materials and an integrated scintillator of a filter plate arranged between the two scintillating materials, can avoid that the contraposition precision caused by the mounting of each scintillating material is not enough to improve the detection precision, and has unique application value in the field of ray detection.
Drawings
FIG. 1 is a schematic diagram of a dual-energy detector arranged vertically in the prior art;
FIG. 2 is a schematic diagram of imaging of a vertically arranged dual-energy detector in the prior art;
FIG. 3 is a schematic diagram of a dual-energy detector arranged horizontally in the prior art;
FIG. 4 is a schematic diagram of a radiation detector according to an embodiment of the present invention;
FIG. 5 is a schematic diagram of a scintillator according to an embodiment of the present invention;
FIG. 6 is a schematic diagram of a photo sensor according to an embodiment of the present invention;
FIG. 7 is a schematic diagram of an identification circuit according to an embodiment of the present invention;
FIGS. 8 a-8 b are schematic views of an anti-scatter-grid in an embodiment of the present invention;
FIG. 9a is a schematic diagram of a radiation detector according to another embodiment of the present invention;
FIG. 9b is a schematic diagram of a radiation detector according to still another embodiment of the present invention;
FIG. 10 is a flow chart of a detection method in accordance with an embodiment of the present invention;
fig. 11 is a schematic diagram of an ore screening system according to an embodiment of the present invention.
Detailed Description
The technical contents of the invention are described in detail below with reference to the accompanying drawings and specific embodiments.
As mentioned above, the multi-energy X-ray detection technique can effectively identify the density and atomic number of the substance contained in the object to be detected without destroying the object to be detected, thereby achieving the effect of substance identification. The existing ray detector based on silicon materials is mostly a dual-energy detector, and comprises two structure arrangement modes: vertically or horizontally.
One example of a vertically arranged dual energy detector is shown in FIG. 1, which includes: the high-energy detector comprises a high-energy PCB substrate 107, a high-energy photodiode chip 106 and a high-energy scintillator 105, wherein the high-energy photodiode chip 106 is arranged on the high-energy PCB substrate 107, and the low-energy detector comprises a low-energy PCB substrate 103, a low-energy photodiode chip 102 is arranged on the low-energy PCB substrate 103, and the low-energy scintillator 101 is attached between the high-energy detector and the low-energy detector. The vertically arranged dual-energy detector has the advantages of simple structure, relatively simple and mature algorithm for identifying basic substances, and is widely applied to security inspection machines or security inspection CT (computed tomography) for luggage inspection and ore screening machines.
However, in this structure, since the high-energy scintillator and the corresponding photodiode array are located on different PCB substrates, respectively, from the low-energy scintillator and the corresponding photodiode array, it is difficult to ensure the alignment accuracy of the two substrates during system assembly, for example, in both the pixel arrangement direction and the object moving direction. When the high-energy detector and the low-energy detector are dislocated, the photocurrent signals collected by the low-energy detector and the high-energy detector may not be generated after the ray passes through the same position of the measured object, so that the accuracy of the effective atomic number calculation value is reduced, the substance identification effect is affected, and misjudgment is easily caused in severe cases.
Moreover, the vertically arranged dual-energy detector structure inevitably causes a large distance h in the vertical direction between the low-energy scintillator and the high-energy scintillator due to the structural characteristics, as shown in fig. 1, the distance h is at least the sum of the thickness of the low-energy photodiode chip 102, the thickness of the low-energy PCB substrate 103 and the thickness of the filter 104, and the distance h is usually more than several millimeters. Since the X-rays emitted by the source 108 are generally in the shape of a cone or a sector, the X-rays passing through the object and reaching the detector surface have an amplifying effect, as shown in fig. 2, resulting in a distance h between the high energy scintillator 105 and the low energy scintillator 101, which results in a non-uniform size of the images of the object 380 to be measured on the low energy detector and the high energy detector. For example, when the shape of the object 380 to be measured is extremely small and a dual-energy detector with an extremely small pixel size is required, the deformation of the image formation between the high-energy scintillator and the low-energy scintillator is greatly influenced, and in a limit situation, there is a possibility that the image formation of the object on the low-energy detector is only one pixel, but the high-energy image covers three pixels, thereby causing misjudgment of image recognition.
An example of a dual energy detector arranged horizontally as shown in fig. 3 includes: the high-energy detector comprises a high-energy photodiode chip 206 and a high-energy scintillator 205 which are arranged on a PCB substrate 203, and the low-energy detector comprises a low-energy photodiode chip 202 and a low-energy scintillator 201 which are arranged on the PCB substrate 203; the high-energy detector and the low-energy detector are horizontally arranged, and the high-energy scintillator is provided with a filter 204. The horizontally arranged dual-energy detector has the advantages that after rays penetrate through an object, the rays respectively enter the low-energy scintillator and the high-energy scintillator, so that the rays absorbed by the high-energy scintillator do not pass through the low-energy scintillator, and the influence of the rays absorbed by the low-energy scintillator on the imaging of the high-energy scintillator can be avoided.
Compared with the dual-energy detectors which are vertically arranged, the high-energy detectors and the low-energy detectors of the dual-energy detectors which are horizontally arranged only need to be aligned in the pixel arrangement direction, and the installation precision requirement of the dual-energy detectors is slightly lower than that of the dual-energy detectors which are vertically arranged. However, the drawback that the dual-energy detector arranged horizontally cannot avoid is that the imaging time of the high-energy scintillator and the imaging time of the low-energy scintillator are different, that is, the object to be measured must first pass through the low-energy scintillator region to be imaged, and then move to the high-energy scintillator region to be imaged. However, in the actual industrial field, for example, in the application of ore screening, the angle of the raw ore as the object to be measured is continuously changed in the process of moving or freely falling, which causes the position of the image formed by the object to be measured on the low-energy scintillator to be different from the position of the image formed by the high-energy scintillator, that is, the dual-energy algorithm cannot be used for precise material identification, that is, the time-sharing imaging manner of the high-energy scintillator and the low-energy scintillator is difficult to meet the requirement of industrial application.
Meanwhile, in the two dual-energy detectors, because the plane of the photodiode chip is perpendicular to the incident direction of the ray, the photodiode chip is inevitably affected by the irradiation of the ray, and the performance of the photodiode is attenuated along with the increase of the radiation dose of the ray until the photodiode chip fails.
Based on the problems of low detection precision and the influence of the radiation device on the device function existing in the prior art, the inventor has conducted intensive research to provide a novel radiation detector as shown in fig. 4, which at least includes:
the scintillator 310 comprises N scintillation layers which are arranged in a stacking mode along a ray incidence direction, the ray absorption wavelength of the scintillation material of each scintillation layer is decreased progressively along the ray incidence direction (or the energy of the scintillation material of each scintillation layer is increased progressively along the ray incidence direction), and N is larger than or equal to 2; and
a photo sensor 320 including photo sensing layers formed on the silicon substrate and disposed corresponding to the respective scintillation layers, each photo sensing layer including a plurality of photodiodes for detecting the corresponding scintillation material to output an electrical signal; the light emitting surface of each scintillation layer of the scintillator 310 faces the light sensing surface of the corresponding photodiode of the photo sensor 320, and the light emitting surface and the light sensing surface are both parallel to the ray incidence direction.
The ray detector converts incident rays into visible light through at least two layers of scintillating materials which are stacked, and simultaneously senses the visible light and outputs current through the photodiodes of the photoelectric sensing layers which are integrated by the photoelectric sensors and correspond to the scintillating materials, so that the object to be detected can be detected by the scintillating materials with various energies, the detection precision is effectively improved, and the ray detector has unique application value in the field of ray detection. The two layers of scintillating materials can be the same or different, and only the energy spectrums of the two layers of scintillators for absorbing rays are different. Since the scintillators with different thicknesses absorb different energy spectra of rays even though the materials are the same, in a specific application scenario, the dual-energy detector may adopt scintillators with different thicknesses and the same materials.
< first embodiment >
In a specific embodiment, as shown in fig. 4, the scintillator 310 of the radiation detector includes 3 scintillation layers, each scintillation layer is arranged in a stack along the incident direction of the radiation, different scintillation layers include scintillation materials with different energies, specifically, the first scintillation layer 311 includes a first scintillation material, the second scintillation layer 313 includes a second scintillation material, and the third scintillation layer 315 includes a third scintillation material; and the energy of the first scintillation material is the lowest, the energy of the second scintillation material is higher than that of the first scintillation material, and the energy of the third scintillation material is the highest, that is, the energies of the scintillation materials of the scintillation layers increase along the incident direction of the ray.
In an alternative embodiment, as shown in fig. 5, each scintillation layer comprises a first delimiting layer and M columns of equally spaced lattices defined by the first delimiting layer, each lattice is provided with a corresponding scintillation material, the number of the lattices is inversely proportional to the distance between two adjacent lattices, M can be any number (for example, in a special application scenario), but generally M ≧ 16, and the length of the lattice of each scintillation layer relative to the incident direction of the radiation increases.
In this embodiment, the first scintillation layer 311 includes a first confinement layer 3111 and a lattice 3112 defined by the first confinement layer 3111, specifically, each lattice 3112 is arranged equidistantly, and the first scintillation layer 311 includes 16 lattices 3112, each of which is provided with a first scintillation material; similarly, the second scintillation layer 313 includes crystal lattices 3132 defined by the first confinement layer 3131 and the first confinement layer 3131, in particular, the crystal lattices 3132 are arranged equidistantly and are arranged corresponding to the crystal lattices 3112 of the first scintillation layer 311, the second scintillation layer 313 includes 16 crystal lattices 3132, each of which is provided with the second scintillation material; similarly, the third scintillation layer 315 includes a first confinement layer 3151 and a lattice 3152 defined by the first confinement layer 3151, specifically, the lattices 3152 are arranged equidistantly and are disposed corresponding to the lattices 3112 of the first scintillation layer 311, and the third scintillation layer 315 includes 16 lattices 3152, each of which is disposed with the third scintillation material. The scintillating material includes, but is not limited to, cesium iodide, cadmium tungstate, gadolinium oxysulfide, bismuth germanate, and the like.
In this embodiment, M takes on powers of 2, such as 16, 32, 64, 128, 256, etc. The value size depends on the distance between adjacent pixels, and the smaller the distance between adjacent pixels is, the larger the value of M is. For example, M is 64 when the pitch of adjacent pixels is 0.8mm, and M is 128 when the pitch of adjacent pixels is 0.4 mm.
As can be seen from fig. 5, each lattice of each scintillation layer of the scintillator 310 is disposed correspondingly, and is specifically represented by equal width alignment of each lattice of each scintillation layer; and the lattices are arranged in a direction perpendicular to the incident direction of the radiation, and the length of each lattice of each scintillation layer in the incident direction of the radiation increases as the energy of the scintillation material increases. That is, in the radiation incident direction, the lattice length of the first scintillation layer 311 is the shortest, the length of the lattice of the second scintillation layer 313 is longer than the length of the lattice of the first scintillation layer 311, and the lattice length of the third scintillation layer 315 is the longest. In other words, because the scintillator of the present embodiment is an integrated structure integrating the scintillation layers, and the pixels formed by the crystal lattices of the scintillation layers are arranged in correspondence to each other, the alignment accuracy of the crystal lattices of the scintillation layers is effectively improved, and the detection accuracy of the radiation detector is further improved.
In the embodiment, the scintillation material in each lattice of each scintillation layer of the scintillator converts incident radiation into visible light and outputs the visible light, and the light-emitting surface of the scintillator is parallel to the incident direction of the radiation in the embodiment, so that the photoelectric sensor can sense the radiation conveniently. Specifically, in the practical application process, the radiation sequentially enters at least two scintillation layers of the scintillator and is converted into corresponding visible light, and the energy of the scintillation material of each scintillation layer increases progressively along the radiation incidence direction.
Meanwhile, because the scintillation materials with different energies in the scintillator are arranged in the scintillation layers which are arranged in a stacked mode, the distance between the scintillation materials is small, and the imaging difference caused by the fact that the imaging amplification factors of the scintillation materials with different energies in the dual-energy detector which is vertically arranged in the prior art are different can be avoided, namely compared with the dual-energy detector which is vertically arranged, the ray detector of the embodiment is higher in detection accuracy; simultaneously, because the scintillation material setting of different energies in the scintillator is in the scintillation layer that the range upon range of arranges, can avoid among the prior art dual-energy detector that the level was arranged because of high energy scintillator and low energy scintillator level arrange lead to the problem that can't survey the testee simultaneously, compare the dual-energy detector that the level was arranged promptly, the detection precision of the ray detector of this embodiment is higher.
It should be noted that, in the present invention, the number of crystal lattices of each scintillation layer is not specifically limited, the size of crystal lattices of each scintillation layer is also not specifically limited, and the sizes of crystal lattices may be the same or different, and those skilled in the art should select an appropriate number of crystal lattices and an appropriate size of crystal lattices according to actual application requirements (for example, energy of a scintillation material and a scintillation material that are actually applied), so as to ensure that the number of crystal lattices of each scintillation layer is the same and aligned, and incident rays respectively penetrate through the scintillation material of each scintillation layer as a design criterion, which is not described herein again.
In view of further improving the detection accuracy of the scintillator, in an alternative embodiment, as shown in fig. 4, the scintillator 310 further includes a filter disposed between two adjacent scintillation layers.
In this embodiment, through setting up the filter plate between two adjacent scintillation layers, absorb the photon of the remaining low energy part that low energy scintillation material does not have complete absorption, see through the filter plate with high energy photon so that high energy scintillation material absorbs to effectively improve the detection precision of scintillator. In particular, as shown in fig. 4, the filter 312 between the first scintillation layer 311 comprising the first scintillation material and the second scintillation layer 313 comprising the second scintillation material is able to absorb the remaining low energy portion of the photons not absorbed by the first scintillation material to ensure that the low energy photons do not enter the second scintillation layer 313 comprising the second scintillation material and the third scintillation layer 315 comprising the third scintillation material; likewise, the filter 314 between the second scintillation layer 313 comprising the second scintillation material and the third scintillation layer 315 comprising the third scintillation material is able to absorb the remaining sub-low energy portion of the photons not absorbed by the second scintillation material to ensure that the sub-low energy photons do not enter the third scintillation layer 315 comprising the third scintillation material.
In this embodiment, the filter is made of one or more of copper, silver, tungsten, lead, iron, nickel, and tin, and the material of each filter in the scintillator may be the same or different, which is not limited in this disclosure.
It should be noted that, the length of the filter in the incident direction of the radiation is not specifically limited, and those skilled in the art should select an appropriate length according to the actual application requirements, for example, the thickness of the filter between scintillating materials with different energies increases according to the specific application scenario, and details are not repeated herein.
In an optional embodiment, a reflective layer is further included between two adjacent scintillation layers of the scintillator to prevent visible light generated by excitation due to radiation incident on the scintillator from entering an adjacent lattice or the scintillation layer, thereby avoiding crosstalk between adjacent pixels and improving detection accuracy of the radiation detector.
As shown in fig. 4, the photosensors 320 of the radiation detector are disposed corresponding to the scintillators 310, and include a photosensor layer disposed corresponding to each scintillator layer, each photosensor layer is configured to sense visible light output by the corresponding scintillator layer, and specifically, each photosensor layer includes a plurality of photodiodes for sensing visible light and outputting a current signal, so that a subsequent device can determine a component of an object to be detected according to the current signal.
As shown in fig. 6, each of the photo-sensing layers of the photo-sensor 320 includes a second defining layer and M rows of photodiodes defined by the second defining layer and corresponding to the lattice in a one-to-one manner.
The number of the photo-sensing layers matches the number of the scintillation layers, i.e. the number of scintillation materials. In the present embodiment, the scintillator of the radiation detector includes three kinds of scintillation materials, and the photosensor 320 includes a first photo-sensing layer 321 corresponding to the first scintillation material, a second photo-sensing layer 322 corresponding to the second scintillation material, and a third photo-sensing layer 323 corresponding to the third scintillation material, each photo-sensing layer is arranged relative to the incident direction of the radiation, and the pixels of each photo-sensing layer are disposed corresponding to each other, that is, the photodiodes of each photo-sensing layer are disposed and aligned in the same width. Each of the photo sensing layers includes a photodiode corresponding to each lattice of the scintillation layer, for example, the first photo sensing layer 321 includes a second delimiting layer 3211 and a photodiode 3212 defined by the second delimiting layer 3211, the photodiodes represent active regions formed on a silicon substrate, i.e., actual photosensitive regions, each of the photodiodes 3212 corresponds to a first scintillation material one to one, and when visible light output by the first scintillation material corresponding to the photodiode 3212 is incident on the active region, electron-hole pairs are generated by excitation, and then a photocurrent output is formed; the second defining layer is not photosensitive; similarly, the second photo-sensing layer 322 includes a second defining layer 3221 and photodiodes 3222 defined by the second defining layer 3221, each photodiode 3222 corresponding to a second scintillation material one to one; similarly, the third photo-sensing layer 323 includes a second bounding layer 3231 and photodiodes 3232 defined by the second bounding layer 3231, each photodiode 3232 corresponding to a third scintillation material.
As can be seen from fig. 6, the photodiodes of the photo-sensing layers of the photo-sensor 320 are correspondingly disposed, and are represented by the equal width alignment of the active regions of the photo-sensing layers; and the photodiodes are arranged in a direction perpendicular to the incident direction of the radiation, and the length of each photodiode of each of the photodetecting layers with respect to the incident direction of the radiation increases as the energy of the scintillator material increases. That is, along the incident direction of the radiation, the length of the lattice of the first scintillation layer 311 is shortest, so the length of the first photoelectric sensing layer 321 is shortest, the length of the lattice of the second scintillation layer 313 is longer than the length of the lattice of the first scintillation layer 311, so the length of the second photoelectric sensing layer 322 is longer than the length of the first photoelectric sensing layer 321, and the length of the lattice of the third scintillation layer 315 is longest, so the length of the third photoelectric sensing layer 323 is longest. In other words, because the photoelectric sensor of the present embodiment is an integrated structure formed on a silicon substrate, the photoelectric sensing layers are arranged relative to the incident direction of the radiation, and the pixels of the photoelectric sensing layers are arranged correspondingly to each other, that is, the photodiodes of the photoelectric sensing layers are arranged in equal width and aligned, so that the alignment accuracy of the photodiodes of the photoelectric sensing layers is effectively improved, and the detection accuracy of the radiation detector is further improved.
In the present embodiment, each photodiode of each photoelectric sensing layer of the photoelectric sensor converts incident visible light into a photocurrent signal, so that the photodiode can sense corresponding visible light conveniently. Meanwhile, in the ray detector with the structure, the photoelectric sensor is arranged on one side of the scintillator instead of being arranged in a stacking mode with the scintillator, so that an incident path of rays can be avoided, and performance reduction or failure caused by irradiation damage of a silicon chip of each photodiode of the photoelectric sensor is avoided. Specifically, in practical applications, the photodiodes of each of the photoelectric sensing layers of the photoelectric sensor respectively detect the visible light output by the corresponding scintillation layer and convert the visible light into an electrical signal for output.
In this embodiment, the photodiodes of the respective photoelectric sensing layers are based on the same silicon substrate, which is a single crystal silicon or amorphous silicon material, and the silicon substrate is fabricated by using a silicon-based photolithography process, so that the error range is on the nanometer scale, which is much higher than the process precision of performing alignment and mounting by using discrete photodiode chips in the prior art, and the alignment precision between the photodiodes is greatly improved, thereby improving the sensing precision of the radiation sensor.
It should be noted that, the number of the scintillation layers and the number of the photoelectric sensing layers are not specifically limited in the present invention, and those skilled in the art should select an appropriate number according to the actual application requirement to implement the detection of the object to be detected as the design criterion, and details are not described herein again.
Based on the scintillator and the photo sensor, as shown in fig. 4 and fig. 7, the present embodiment further includes an identification circuit 360 disposed on a side of the photo sensor 320 away from the scintillator 310, where the identification circuit 360 includes an analog-to-digital converter chip 361, a field programmable gate array 362, a power circuit 364, and a communication interface 363.
In this embodiment, as shown in fig. 4 and 7, the identification circuit 360 can convert the photocurrent output by the photo sensor 320 into a digital signal and transmit the digital signal, specifically, the power circuit 364 is used to supply power to the analog-to-digital converter chip 361 and the field programmable gate array 362, the analog-to-digital converter chip 361 is used to convert the analog electrical signal output by each photodiode of the photo sensor into a digital electrical signal, and the field programmable gate array 362 is used to perform data processing on the digital signal and output a communication signal to the communication interface 363.
In the prior art, since the photoelectric sensor is arranged perpendicular to the incident direction of the rays, in order to prevent the rays from irradiating and damaging the function of the identification circuit, the back of the photoelectric sensor cannot be provided with any circuit component, while the photoelectric sensor of the ray detector of the embodiment is parallel to the incident direction of the rays, the identification circuit is arranged on the back of the photoelectric sensor, so that the size of the ray detector is effectively reduced, and the cost of the ray detector is reduced.
It should be noted that, the identification circuit is not specifically limited in the present invention, and those skilled in the art should configure the identification circuit according to the actual application requirement, for example, only include a charge amplifier that converts the photocurrent into a voltage signal, and then transmit the voltage signal to a separate signal processing board through a connector for analog-to-digital conversion and data output; or for example only an analog-to-digital converter chip 361, with a field programmable gate array 362 on the other carrier; and will not be described in detail herein.
Further, as shown in fig. 4, the radiation detector further includes a carrier 330, the identification circuit 360 is disposed on one side of the carrier 330, and the photo sensor 320 and the scintillator 310 are sequentially stacked on the other side of the carrier 330. However, as an alternative, the identification circuit may be disposed on both sides of the carrier board, as long as the position of the detector is avoided. I.e. the identification circuit is arranged on the carrier plate at a position where it does not interfere with the detector.
In the embodiment, the identification circuit 360, the photoelectric sensor 320 and the scintillator 310 are integrated on one carrier board, which not only greatly reduces the area of the carrier board, but also reduces the cost and installation difficulty of the radiation detector. In this embodiment, the carrier is any one of a PCB substrate, a ceramic substrate and a rigid-flex board, and a person skilled in the art should select an appropriate carrier according to actual application requirements, which is not described herein again.
In view of the problems of reflection and scattering of the radiation when the radiation is incident on the scintillator, in an alternative embodiment, as shown in fig. 4, 8a and 8b, the radiation detector further includes an anti-scatter grid 350 disposed on a side of the scintillator 310 close to the radiation source 370 of the radiation, including a shielding region 351 and a plurality of hollow-out regions 352 defined by the shielding region 351, wherein the shielding region 351 is disposed on the side of the scintillator, and the shielding region 351 is disposed on the side of the scintillator
The hollow-out area 352 is disposed corresponding to the crystal lattices of each scintillation layer of the scintillator 310, and is configured to inject the radiation incident in the predetermined direction into the crystal lattices of each scintillation layer;
the blocking region 351 is used for absorbing rays other than the rays incident in the predetermined direction.
In this embodiment, the anti-scatter-grid 350 is a tungsten plate, which has a large atomic number, high hardness, and high processability, and can absorb most of low-energy rays. In this embodiment, the grid formed by the tungsten plate is only hollowed at the lattice position of the scintillator, that is, a hollowed-out area corresponding to the lattice of the scintillator is formed, and the rest positions are shielded by the shielding area, where the hollowed-out area is used to ensure that incident rays are almost incident in a direction perpendicular to the arrangement direction of the scintillating materials with different energies, and other rays which affect the imaging quality, such as the rest reflected rays and scattered rays, are absorbed by the shielding area.
In this embodiment, in order to further improve the detection accuracy of the radiation detector, the size of the grid of the anti-scatter grid is consistent with each scintillation material of the scintillator, and the pitch between adjacent grids is also consistent with the pitch between each lattice in the scintillator and the pitch between the photodiodes of the photosensors. The height of each of the anti-scatter-grids can be adjusted accordingly according to the angle of the incident ray.
In the practical application process, the hollow-out area transmits the rays incident according to the preset direction, and the shielding area absorbs the rays except the rays incident in the preset direction.
In this embodiment, the anti-scatter grid may also be made of metal such as copper or steel, and those skilled in the art should select an appropriate material according to the actual application requirement to realize absorption of scattered and reflected rays as a design criterion, which is not described herein again.
In an alternative embodiment, shown in fig. 9a, a radiation detector comprises:
a housing provided with an opening 390, the opening 390 corresponding to the scintillator 310 to receive the incident ray; and
a radiation protection layer 340 disposed inside the cabinet and surrounding the opening 390 to prevent the radiation from being incident.
In the present embodiment, as shown in fig. 9a, the radiation detector includes a chassis, the chassis is provided with an opening 390 for radiation incidence, the anti-scatter grid 350 corresponds to the opening to transmit approximately vertically incident radiation and absorb other radiation, the first scintillation layer 311 of the scintillator 310 absorbs photons of a low energy portion of the incident radiation and converts the photons into visible light so that the photodiode of the photo-sensing layer corresponding to the photo-sensor 320 senses and outputs a photocurrent signal, the filter 312 absorbs photons of a remaining low energy portion that is not completely absorbed by the first scintillation layer 311 and transmits the photons of a high energy portion, the second scintillation layer 313 of the scintillator 310 absorbs photons of a high energy portion of the incident radiation and converts the photons into visible light so that the photodiode of the photo-sensing layer corresponding to the photo-sensor 320 senses and outputs the photocurrent signal; the scintillator 310 and the photoelectric sensor 320 are integrated on one side of the carrier 330, the other side of the carrier 330 is provided with an identification circuit 360, an analog-to-digital converter chip 361 of the identification circuit 360 converts a photocurrent signal into a digital electrical signal, and the field programmable gate array 362 is used for performing data processing on the digital signal and outputting a communication signal to the communication interface 363; meanwhile, the ray protection layer 340 is disposed inside the housing and surrounds the opening 390, and the ray protection layer is a lead block, which can effectively block rays from being injected, so as to prevent rays from being injected from a place outside the opening 390 and causing irradiation damage to other devices, for example, the ray protection layer 340 effectively protects the photoelectric sensor and the identification circuit from being damaged by the irradiation of rays, thereby improving the detection performance and the service life of the ray detector.
It should be noted that the radiation detector shown in fig. 9a is only used to illustrate an embodiment of the present invention, and a person skilled in the art should set a radiation detector according to practical application requirements, such as the radiation detector shown in fig. 9b, the radiation detector includes a chassis, an opening 390 for radiation incidence is provided on the chassis, the anti-scatter-grid 350 corresponds to the opening to transmit approximately vertically incident radiation and absorb other radiation, the first scintillation layer 311 of the scintillator 310 absorbs photons of the low energy portion of the incident radiation and converts the photons into visible light so that the photodiode of the photo-sensing layer corresponding to the photo-sensor 320 senses and outputs photocurrent signals, the filter 312 absorbs photons of the remaining low energy portion that are not completely absorbed by the first scintillation layer 311 and transmits photons of the high energy portion, and the second scintillation layer 313 of the scintillator 310 absorbs photons of the second low energy portion of the incident radiation and converts the photons into visible light so that the photons of the second scintillation layer corresponding to the photo-sensor 320 can sense and output photocurrent signals The photodiode of the photo-sensing layer senses and outputs a photocurrent signal, the filter 314 absorbs the remaining sub-low energy portion of photons not completely absorbed by the second scintillation layer 313 and transmits the high energy portion of photons, and the third scintillation layer 315 of the scintillator 310 absorbs the high energy portion of photons of the incident ray and converts the photons into visible light so that the photodiode of the photo-sensing layer corresponding to the photo-sensor 320 senses and outputs the photocurrent signal; the scintillator 310 and the photo sensor 320 are integrated on one side of the carrier plate 330, the carrier plate 330 transmits a photocurrent signal to the identification circuit 360 through the flexible board 391 arranged along the mounting bracket 392, the analog-to-digital converter chip 361 of the identification circuit 360 converts the photocurrent signal into a digital electrical signal, and the field programmable gate array 362 is configured to perform data processing on the digital signal and output a communication signal to the communication interface 363; meanwhile, the ray protection layer 340 is disposed on one side of the carrier 330 away from the scintillator, so as to effectively prevent the identifiable circuit from being incident from a place other than the opening 390 and causing radiation damage to other devices, thereby improving the detection performance and the service life of the ray detector.
In the embodiment, incident rays are respectively converted into visible light through the stacked scintillators of at least two scintillating materials, and meanwhile, the visible light is sensed and current is output through the photodiode of the photoelectric sensing layer integrated by the photoelectric sensor and corresponding to each scintillating material, so that the scintillating materials with various energies can simultaneously detect the object to be detected, and the detection precision is effectively improved; particularly, the photoelectric sensor integrates a plurality of scintillating materials and an integrated scintillator of a filter plate arranged between the two scintillating materials, so that the detection precision can be prevented from being not high enough due to the contraposition precision caused by the mounting of each scintillating material, and the photoelectric sensor has unique application value in the field of ray detection.
< second embodiment >
The second embodiment of the present invention also provides a detection method, as shown in fig. 10, including:
the method comprises the following steps that rays sequentially enter N scintillation layers of a scintillator and are respectively converted into corresponding visible light, the energy of scintillation materials of the scintillation layers is increased progressively along the ray incidence direction, wherein N is larger than or equal to 2;
the photodiodes of each photoelectric sensing layer of the photoelectric sensor respectively detect the visible light output by the corresponding scintillation layer and convert the visible light into an electric signal for output.
The embodiment converts incident rays into visible light through the scintillators of at least two scintillation materials which are stacked, and simultaneously senses the visible light and outputs current through the photodiodes of the photoelectric sensing layers which are integrated by the photoelectric sensors and correspond to the scintillation materials, so that the scintillation materials with various energies can simultaneously detect a detected object, and the detection precision is effectively improved.
In an optional embodiment, the radiation detector further includes an anti-scatter grid disposed on a side of the scintillator close to the radiation source of the radiation, the anti-scatter grid including a shielding region and a hollow region defined by the shielding region, before the radiation sequentially enters N scintillation layers of the scintillator and is respectively converted into corresponding visible light, the detection method includes:
the hollowed-out area penetrates through rays incident according to a preset direction, and the shielding area absorbs rays except the rays incident in the preset direction.
The embodiment further comprises an anti-scattering grid with a shielding area and a hollow-out area, incident rays are almost transmitted through the hollow-out area by rays of the scintillating materials with different energies, and other rays which affect the imaging quality, such as other reflected rays and scattered rays, are absorbed through the shielding area, so that the detection precision of the ray detector is improved, and the ray detector has a unique application value in the field of ray detection.
< third embodiment >
A third embodiment of the present invention provides a detection system including the above-described radiation detector.
In this embodiment, the detection system converts incident rays into visible light through the scintillators of at least two scintillation materials stacked in the detector, and senses the visible light and outputs current through the photodiodes of the photoelectric sensing layers integrated by the photoelectric sensor and corresponding to the scintillation materials, so that the multiple energy scintillation materials can simultaneously detect the object to be detected, and the detection precision is effectively improved.
In one specific embodiment, as shown in FIG. 11, the detection system is an ore screening system comprising a hopper 410, a radiation source 430, a classifier 450, a first ore trough 460, a second ore trough 470, and the radiation detector 440 described above, wherein
The feeding hopper 410 is used for receiving and sequentially outputting ores 420 to be tested;
the radiation source 430 is used for emitting radiation;
the ray detector 440 is configured to receive a ray for detecting the ore 420 to be detected, convert the ray into visible light through each scintillation layer, sense the visible light by each photodiode of the photoelectric sensing layer of the corresponding photoelectric sensor, and output an electrical signal;
the classifier 450 is configured to output the ore to be detected to the first ore tank 460 or the second ore tank 470 according to the electrical signal.
In this embodiment, the ore screening system receives and sequentially outputs the ore 420 to be tested through the hopper 410, the ore to be tested descends in a free fall manner, and during the descending process, the radiation emitted by the radiation source 430 irradiates and passes through the ore to be tested and enters the radiation detector 440, the scintillating materials of the multiple stacked scintillating layers of the scintillator of the radiation detector respectively absorb photons of corresponding energy portions of the incident radiation and convert the photons into visible light so as to be sensed by the photodiodes of the corresponding photoelectric sensing layers of the photoelectric sensor and output photocurrent signals, wherein the scintillator of the radiation detector comprises scintillating materials with energy increasing along the incident direction of the radiation, so as to simultaneously detect the ore 420 to be tested by using the multi-energy scintillating materials, and then receive the photocurrent signals through the identification circuit of the radiation detector and convert and output to the classifier 450, in this embodiment, the classifier 450 is a spray valve, the ore classifying device is used for classifying corresponding ores to be detected according to the detection result of the ores to be detected 420, for example, useful ores are put into the first ore tank 460, and useless ores are put into the second ore tank 470, so that nondestructive detection and rapid classification of the ores to be detected are realized, and the ore classifying device has practical application value in the field of ore detection.
In another specific embodiment, the detection system is an industrial accelerator including the above-described radiation detector.
As shown in fig. 9b, the present embodiment is applied to the field of industrial nondestructive detection, such as an accelerator with up to several mev, the energy of the radiation emitted from the radiation source is stronger, the components of the object to be detected may be more complex, and 3 or more scintillators with different energies are required to detect the object to be detected. Meanwhile, considering that the energy of the rays emitted by the accelerator is too high, the lead block with the common thickness is not enough to absorb all the rays, the photoelectric sensor 320 and the identification circuit 360 can be connected through the soft board 391, and on the premise of not obviously increasing the volume of the machine shell, more space is provided for the ray protection layer 340, so that thicker materials are used for protecting the identification circuit, and the detection performance and the service life of the ray detector are improved.
Compared with the prior art, the invention converts incident rays into visible light respectively through the stacked scintillators of at least two scintillating materials, and simultaneously senses the visible light and outputs current through the photodiode of the photoelectric sensing layer which is integrated by the photoelectric sensor and corresponds to each scintillating material, thereby realizing that the scintillating materials with various energies simultaneously detect the object to be detected and effectively improving the detection precision. The photoelectric sensor integrates various scintillating materials and an integrated scintillator of a filter plate arranged between the two scintillating materials, can avoid that the contraposition precision caused by the mounting of each scintillating material is not enough to improve the detection precision, and has unique application value in the field of ray detection.
The radiation detector, the detection method and the detection system provided by the invention are explained in detail above. It will be apparent to those skilled in the art that any obvious modifications thereof can be made without departing from the spirit of the invention, which infringes the patent right of the invention and bears the corresponding legal responsibility.
Claims (12)
1. A radiation detector, characterized by comprising:
the scintillator comprises N scintillation layers which are arranged in a stacking mode along the ray incidence direction, the ray absorption wavelength of the scintillation material of each scintillation layer is decreased progressively along the ray incidence direction, and N is larger than or equal to 2; and the number of the first and second groups,
the photoelectric sensor comprises photoelectric sensing layers formed on the silicon substrate and arranged corresponding to the scintillation layers, and each photoelectric sensing layer comprises a plurality of photodiodes for detecting corresponding scintillation materials so as to output an electric signal; the light-emitting surface of each scintillation layer of the scintillator faces the corresponding photosensitive surface of the photodiode of the photoelectric sensor, and the light-emitting surface and the photosensitive surface are parallel to the ray incidence direction.
2. The radiation detector of claim 1, wherein:
each scintillation layer comprises a first defining layer and M columns of lattices defined by the first defining layer and arranged equidistantly, each lattice is provided with corresponding scintillation materials, the number of the lattices is inversely proportional to the distance between two adjacent lattices, and the length of the lattice of each scintillation layer relative to the incident direction of the ray is increased;
each photoelectric sensing layer comprises a second defining layer and M columns of photodiodes which are defined by the second defining layer and correspond to the crystal lattices in a one-to-one mode.
3. The radiation detector of claim 2, further comprising an anti-scatter-grid disposed on a side of the scintillator proximate to the source of radiation, the anti-scatter-grid including an obscured region and M hollowed-out regions defined by the obscured region; wherein,
the hollow-out areas are arranged corresponding to the crystal lattices of each scintillation layer of the scintillator and are used for enabling rays incident according to a preset direction to be incident into the crystal lattices of each scintillation layer;
the shielding region is used for absorbing rays except for rays incident according to a predetermined direction.
4. The radiation detector of claim 1, wherein: the scintillator also comprises a filter plate arranged between two adjacent scintillation layers;
the materials of the filter plates are the same or different;
the lengths of the filter plates relative to the incidence direction of the ray are the same or different.
5. The radiation detector of claim 1, further comprising an identification circuit disposed on a side of said photosensor remote from said scintillator, said identification circuit including an analog-to-digital converter chip, a field programmable gate array, a power circuit, and a communication interface.
6. The radiation detector of claim 5, further comprising a carrier board, wherein the identification circuit is disposed on one side of the carrier board, and the photoelectric sensor and the scintillator are sequentially stacked on the other side of the carrier board;
the carrier plate is any one of a PCB substrate, a ceramic substrate and a rigid-flex board.
7. The radiation detector of any one of claims 1-6, further comprising:
a casing provided with an opening corresponding to the scintillator to receive the incident ray; and
a radiation protection layer disposed inside the cabinet and surrounding the opening to prevent the radiation from being incident.
8. A detection method is realized by the ray detector of any one of claims 1-7, and is characterized by comprising the following steps:
enabling rays to sequentially enter N scintillation layers of the scintillator and respectively convert the rays into corresponding visible light, wherein the energy of scintillation materials of each scintillation layer increases progressively along the incident direction of the rays, and N is more than or equal to 2;
the visible light output by the corresponding scintillation layer is detected by the photodiodes of the photoelectric sensing layers of the photoelectric sensor and converted into electric signals to be output.
9. The detection method of claim 8, wherein:
the ray detector further comprises an anti-scatter grid arranged on one side, close to the ray source, of the scintillator, the anti-scatter grid comprises a shielding area and a hollow-out area limited by the shielding area, and before the rays sequentially enter the N scintillation layers of the scintillator and are respectively converted into corresponding visible light, the detection method further comprises the following steps:
the hollow-out region transmits rays incident in a predetermined direction, and the shielding region absorbs rays except the rays incident in the predetermined direction.
10. A detection system, characterized by comprising a radiation detector according to any one of claims 1 to 7.
11. The detection system of claim 10, wherein the detection system is an ore screening system comprising a hopper, a radiation source, a classifier, a first ore trough, a second ore trough, and the radiation detector, wherein,
the feeding hopper is used for receiving and sequentially outputting ores to be detected;
the ray source is used for emitting rays;
the ray detector is used for receiving rays for detecting the ore to be detected, converting the rays into visible light through each scintillation layer, and sensing the visible light and outputting an electric signal by each photodiode of the photoelectric sensing layer of the corresponding photoelectric sensor;
and the classifier is used for respectively outputting the ores to be detected to the first ore groove or the second ore groove according to the electric signals.
12. A detection system according to claim 10, wherein the detection system is an industrial accelerator including said radiation detector.
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