CN114864816A - Manufacturing process, semiconductor memory device and semiconductor processing equipment - Google Patents
Manufacturing process, semiconductor memory device and semiconductor processing equipment Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 94
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 20
- 238000012545 processing Methods 0.000 title claims abstract description 17
- 239000001301 oxygen Substances 0.000 claims abstract description 147
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 147
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 142
- 238000004544 sputter deposition Methods 0.000 claims abstract description 133
- 230000008859 change Effects 0.000 claims abstract description 58
- 238000000151 deposition Methods 0.000 claims abstract description 31
- 239000010408 film Substances 0.000 claims description 186
- 239000010409 thin film Substances 0.000 claims description 64
- 235000012431 wafers Nutrition 0.000 claims description 58
- 230000009467 reduction Effects 0.000 claims description 52
- 238000012546 transfer Methods 0.000 claims description 36
- 238000000034 method Methods 0.000 claims description 35
- 230000008569 process Effects 0.000 claims description 34
- 239000007789 gas Substances 0.000 claims description 19
- 230000002950 deficient Effects 0.000 claims description 15
- 230000005540 biological transmission Effects 0.000 claims description 6
- 238000002203 pretreatment Methods 0.000 claims description 6
- 238000007781 pre-processing Methods 0.000 claims description 5
- 238000004140 cleaning Methods 0.000 claims description 4
- 230000003247 decreasing effect Effects 0.000 claims description 3
- 238000005086 pumping Methods 0.000 claims description 3
- 238000011946 reduction process Methods 0.000 claims description 3
- 238000004891 communication Methods 0.000 claims description 2
- 239000011261 inert gas Substances 0.000 claims description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 17
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 13
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 13
- 229910052715 tantalum Inorganic materials 0.000 description 12
- 239000013077 target material Substances 0.000 description 10
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 7
- 230000008021 deposition Effects 0.000 description 6
- 229910001936 tantalum oxide Inorganic materials 0.000 description 6
- -1 oxygen ions Chemical class 0.000 description 5
- 238000010586 diagram Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000003749 cleanliness Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- NQKXFODBPINZFK-UHFFFAOYSA-N dioxotantalum Chemical compound O=[Ta]=O NQKXFODBPINZFK-UHFFFAOYSA-N 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 230000000607 poisoning effect Effects 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/021—Formation of switching materials, e.g. deposition of layers
- H10N70/026—Formation of switching materials, e.g. deposition of layers by physical vapor deposition, e.g. sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/083—Oxides of refractory metals or yttrium
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5846—Reactive treatment
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/041—Modification of switching materials after formation, e.g. doping
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/883—Oxides or nitrides
- H10N70/8833—Binary metal oxides, e.g. TaOx
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- Manufacturing & Machinery (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention discloses a manufacturing process of a semiconductor memory device, the semiconductor memory device and semiconductor processing equipment, wherein the manufacturing process comprises the following steps: s100, sputtering and depositing a bottom electrode film on the wafer; s200, sputtering and depositing an oxygen-enriched resistive film with a certain thickness on the bottom electrode film; s300, reducing the part with the preset thickness of the resistance change film in the oxygen-rich state to change the part with the preset thickness of the resistance change film from the oxygen-rich state to the oxygen-poor state; wherein the content of oxygen element in oxygen-rich state is larger than that in oxygen-poor state; s400, circularly executing the steps S200 and S300, and sequentially depositing a plurality of layers of resistive films until the total thickness of the plurality of layers of resistive films reaches a first thickness to form a resistive layer; and S500, sputtering and depositing a top electrode film on the resistance change layer. The scheme can solve the problem of poor performance of the semiconductor memory device.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a manufacturing process of a semiconductor memory device, the semiconductor memory device and semiconductor processing equipment.
Background
With the rapid development of semiconductor processes, semiconductor memory devices are becoming smaller in size and larger in storage capacity. However, with the improvement of the integration level of the device, the traditional Flash memory is difficult to meet the process requirements. Resistive Random Access Memory (RRAM) has received attention due to advantages such as simple Memory cell structure, fast operation speed, low power consumption, stable information retention, non-volatility, and compatibility with Complementary Metal Oxide Semiconductor (CMOS) process.
The resistive random access memory comprises a substrate, a bottom electrode, a resistive film and a top electrode, wherein the bottom electrode is deposited on the substrate, and the resistive film is positioned between the bottom electrode and the top electrode. When a proper voltage is applied between the two electrodes, the resistive film can be switched between two stable resistance states.
The resistance change thin film is generally a metal oxide, for example, an oxide of tantalum, an oxide of gallium, or the like. In the related art, a resistance change film is prepared by a magnetron sputtering chamber. Taking the material of the resistive film as an oxide of tantalum as an example, the target material of the magnetron sputtering chamber may be a tantalum target material. And in the process of the magnetron sputtering chamber, oxygen is introduced, and oxygen atoms in the oxygen are combined with tantalum atoms of the target material, so that the tantalum oxide film is deposited on the surface of the bottom electrode. The resistance change film is usually in an oxygen-deficient state, wherein the oxygen-deficient state means that oxygen vacancies exist in the tantalum oxide film, so that the resistivity of the tantalum oxide film is ensured.
However, in the magnetron sputtering chamber, in order to obtain the tantalum oxide film in an oxygen-deficient state during the process, the flow rate of the introduced oxygen is usually required to be extremely accurate. Due to the change of the oxygen flow, the oxidation degree of the target surface is different. For example, the tantalum target material in the area with large oxygen flow is completely oxidized, and the tantalum target material in the area with small oxygen flow is not oxidized or is not completely oxidized, so that the stoichiometric ratio of oxygen element to tantalum element in each area of the resistive film is different, the distribution of elements in each area of the resistive film is uneven, the uniformity of the resistivity of the resistive film is poor, and the performance of the semiconductor memory device is poor.
Disclosure of Invention
The invention discloses a manufacturing process of a semiconductor memory device, the semiconductor memory device and semiconductor processing equipment, and aims to solve the problem of poor performance of the semiconductor memory device.
In order to solve the problems, the invention adopts the following technical scheme:
a process for fabricating a semiconductor memory device, the process comprising:
s100, sputtering and depositing a bottom electrode film on the wafer;
s200, sputtering and depositing an oxygen-enriched resistive film with a first thickness on the bottom electrode film;
s300, reducing the part with the preset thickness of the resistive film to change the part with the preset thickness of the resistive film from the oxygen-rich state to the oxygen-poor state; wherein the content of the oxygen element in the oxygen-rich state is greater than the content of the oxygen element in the oxygen-deficient state;
s400, circularly executing the steps S200 and S300, and sequentially depositing a plurality of layers of resistive films until the total thickness of the resistive films reaches a first thickness to form a resistive layer;
and S500, sputtering and depositing a top electrode film on the resistance change layer.
A semiconductor memory device is manufactured by the manufacturing process.
The semiconductor process equipment comprises a film sputtering chamber, a semiconductor reduction chamber, a bottom electrode sputtering chamber and a top electrode sputtering chamber;
wafers can be mutually transmitted among the bottom electrode sputtering chamber, the film sputtering chamber, the semiconductor reduction chamber and the top electrode sputtering chamber, and the film sputtering chamber is used for depositing a resistance change film in an oxygen-rich state on the wafers; the semiconductor reduction chamber is used for reducing the resistance changing film in the oxygen-rich state so as to change the part with the preset thickness of the resistance changing film from the oxygen-rich state to an oxygen-poor state; the bottom electrode sputtering chamber is used for depositing the bottom electrode film for the wafer, the top electrode sputtering chamber is used for depositing the top electrode film for the wafer, the film sputtering chamber and the semiconductor reduction chamber are positioned between the bottom electrode sputtering chamber and the top electrode sputtering chamber, and the film sputtering chamber is positioned between the bottom electrode sputtering chamber and the semiconductor reduction chamber;
wherein the content of the oxygen element in the oxygen-rich state is greater than that in the oxygen-deficient state.
The technical scheme adopted by the invention can achieve the following beneficial effects:
the invention discloses a manufacturing process, wherein a resistance change film in an oxygen-rich state is reduced to obtain a resistance change film in an oxygen-poor state. In this case, when the resistance change film is sputtered, in order to obtain the resistance change film in an oxygen-rich state, the entire target material of the film sputtering chamber for sputtering the resistance change film may be oxidized to make the elements in each region of the surface of the target material uniformly distributed, so that the elements in each region of the resistance change film sputtered on the bottom electrode film are uniformly distributed to make each region of the resistance change film have a uniform stoichiometric ratio of the elements. Then, the resistance change film in the oxygen-rich state is subjected to reduction treatment so as to change the resistance change film from the oxygen-rich state to the oxygen-poor state, so that partial oxygen elements in the resistance change film are reduced, and oxygen vacancies are generated in the resistance change film. Compared with the scheme in the related art, the resistive film has the advantages that the elements in all the areas are uniformly distributed, so that the more uniform stoichiometric ratio of the elements can be realized, the uniformity of the resistivity of the resistive film is better, and the performance of a semiconductor memory device is improved.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the invention and not to limit the invention. In the drawings:
FIG. 1 is a graph illustrating the poisoning effect of a target according to the related art;
FIG. 2 is a line graph of the flow rate of oxygen versus the resistivity in the related art;
FIG. 3 is a flow chart of a semiconductor memory device according to an embodiment of the present invention;
FIG. 4 is a schematic structural diagram of a semiconductor processing apparatus according to an embodiment of the present invention;
FIG. 5 is a schematic diagram of a semiconductor reduction chamber of the semiconductor processing apparatus according to an embodiment of the present invention;
fig. 6 is a schematic structural diagram of a resistance change film manufactured by the manufacturing process disclosed in the embodiment of the invention;
FIG. 7 is a graph of a test coordinate of a wafer;
FIG. 8 is a graph comparing the sheet resistance of the related art and the present invention.
Description of reference numerals:
100-thin film sputtering chamber, 200-semiconductor reduction chamber, 210-chamber body, 220-bearing table, 230-radio frequency device, 231-radio frequency coil, 232-radio frequency rod, 240-support, 300-vacuum transmission chamber, 400-atmosphere transmission chamber, 500-bottom electrode sputtering chamber, 600-top electrode sputtering chamber, 700-pretreatment chamber, 810-wafer, 820-bottom electrode film, 830-resistance change layer, 831-resistance change film and 840-top electrode film.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the technical solutions of the present invention will be clearly and completely described below with reference to the specific embodiments of the present invention and the accompanying drawings. It is to be understood that the described embodiments are merely exemplary of the invention, and not restrictive of the full scope of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the related art, when depositing a resistance change film in an oxygen deficient state, as shown in fig. 1, the abscissa in fig. 1 represents the flow rate of oxygen, and the ordinate represents the sputtering voltage of the target. The solid line in fig. 1 shows a change curve of the sputtering voltage in the process of increasing the oxygen flow rate, the target surface is gradually oxidized with the increase of the oxygen flow rate, and the sputtering voltage is stable after being gradually increased with the increase of the oxidation degree of the target surface. The broken line in fig. 1 represents the change curve of the sputtering voltage during the reduction of the oxygen flow rate. Along with the reduction of the oxygen flow, the sputtering voltage is kept stable firstly and then is increased suddenly, and along with the reduction of the oxygen flow to zero, the sputtering voltage is reduced to the state of the pure metal target material. Therefore, in order to obtain a resistance change film in an oxygen deficient state, it is only possible to obtain the resistance change film at a position where the sputtering voltage rapidly rises as shown by a solid line or at a position where the sputtering voltage rapidly falls as shown by a broken line in fig. 1, and therefore, the oxygen flow rate needs to be accurately controlled. Meanwhile, the process window for obtaining the resistance change film in an oxygen-deficient state is very small, and the process difficulty is high.
As shown in fig. 2, the abscissa in fig. 2 represents the oxygen flow rate, and the ordinate represents the resistivity of the resistance-variable film. As can be seen from fig. 2, the weak fluctuation of the oxygen flow causes a large fluctuation in the resistance of the resistive thin film, so that the uniformity of the resistivity of the resistive thin film in the related art is poor, and the performance of the semiconductor memory device is poor.
The technical solutions disclosed in the embodiments of the present invention are described in detail below with reference to the accompanying drawings.
Referring to fig. 3, an embodiment of the present invention discloses a manufacturing process of a semiconductor memory device, which specifically includes the following steps:
s100, sputtering and depositing a bottom electrode film 820 on the wafer 810.
The bottom electrode thin film 820 may be manufactured in a magnetron sputtering manner, so that a process chamber for sputtering the bottom electrode may be a magnetron sputtering chamber, and the magnetron sputtering chamber may be a DC (Direct Current) magnetron sputtering chamber or an RF (Radio Frequency) magnetron sputtering chamber. The bottom electrode thin film 820 may be made of an inorganic material or a conductive flexible organic material.
And S200, sputtering and depositing an oxygen-rich resistive film 831 with a certain thickness on the bottom electrode film 820.
The resistance change film 831 may be manufactured by magnetron sputtering, and thus the film sputtering chamber 100 for sputtering the resistance change film 831 may be a magnetron sputtering chamber, which may be a DC magnetron sputtering chamber or an RF magnetron sputtering chamber. The oxygen-rich state indicates that the resistive film 831 is the highest-valence oxide, and it can also be understood that the target of the film sputtering chamber 100 is completely oxidized, and then the film sputtering chamber 100 is filled with sufficient oxygen.
In the specific process, oxygen with a first preset flow is introduced into the film sputtering chamber 100, and the oxygen-rich resistive film 831 with a certain thickness is deposited on the wafer 810. The resistive film 831 is in an oxygen-rich state, so that oxygen is introduced into the film sputtering chamber 100 in a sufficient amount, so that a target of the film sputtering chamber 100 can be completely oxidized, and elements in each region of the resistive film 831 are uniformly distributed during sputtering of the target, so that each region of the resistive film 831 has a uniform stoichiometric ratio of the elements.
S300, reducing the part with the preset thickness of the resistive film 831 to change the part with the preset thickness of the resistive film 831 from an oxygen-rich state to an oxygen-poor state; wherein the content of oxygen element in oxygen-rich state is greater than that in oxygen-poor state.
In the specific process, after the wafer 810 is deposited once with the resistive film 831, the wafer 810 is introduced into the semiconductor reduction chamber 200 for reducing the resistive film 831 to reduce the resistive film 831 in an oxygen-rich state, so that the resistive film 831 is changed from the oxygen-rich state to an oxygen-poor state. Reducing gas is introduced into the semiconductor reduction chamber 200 and reacts with oxygen in the resistive film 831, so that the resistive film 831 loses oxygen ions and oxygen vacancies are obtained.
In this case, the resistance variable film 831 is an oxide having a non-maximum valence in an oxygen deficient state. At this time, the reduced resistive film 831 loses a part of oxygen ions, thereby obtaining oxygen vacancies, and further changing the resistive film 831 from an oxygen-rich state to an oxygen-deficient state.
Taking the resistive film 831 as an oxide of tantalum as an example, the resistive film 831 is in an oxygen-rich state, that is, the oxide of tantalum is tantalum pentoxide, and the tantalum target is completely oxidized, so that the surface of the tantalum target is tantalum pentoxide, and therefore, in the sputtering process, the distribution of elements in each region of the resistive film 831 is that the stoichiometric ratio of tantalum to oxygen is 2: 5.
then, the tantalum pentoxide film is introduced into the semiconductor reduction chamber 200 to reduce the tantalum pentoxide film, so that the tantalum pentoxide loses oxygen ions to obtain oxygen vacancies, and further the tantalum pentoxide film in an oxygen-deficient state generates a tantalum oxide (TaOx) film in an oxygen-rich state.
The preset thickness may be the thickness of the resistive film 831 after one deposition, or may be a partial thickness of the resistive film 831 after one deposition. Since reduction is performed sequentially from the upper surface of the resistive thin film 831 to the lower surface of the resistive thin film 831 in the reduction, the predetermined thickness may be a thickness between the upper surface and the lower surface of each resistive thin film 831.
The reducing gas in the above embodiments may be hydrogen, ammonia, silane, etc., and of course, the reducing gas may also be other gases, which is not limited herein. The resistive film 831 in the above embodiment may also be an oxide of hafnium, an oxide of nickel, an oxide of titanium, and an oxide of aluminum, and may also be an oxide of other metals, which is not limited herein.
S400, and circularly performing steps S200 and S300, and sequentially depositing the multilayer resistive film 813 until the total thickness of the multilayer resistive film 813 reaches a first thickness to form the resistive layer 830.
After the resistive film 831 is reduced once, the resistive film 831 in an oxygen-rich state is deposited on the reduced resistive film 831 in an oxygen-poor state again, and the resistive film 831 in the oxygen-rich state is reduced again to form the resistive layer 830 after multiple cycles. The first thickness may be between 5 and 100mm, and the predetermined thickness may be set according to specific process requirements. The thickness of each of the resistive film 831 can be flexibly set according to the thickness of the resistive layer 830.
S500, sputtering and depositing a top electrode film 840 on the resistance change layer 830.
The top electrode film 840 can be manufactured by magnetron sputtering, and thus the process chamber for sputtering the top electrode film 840 can be a magnetron sputtering chamber, which can be a DC magnetron sputtering chamber or an RF magnetron sputtering chamber. The top electrode film 840 may be made of an inorganic material or a conductive flexible organic material. The top electrode thin film 840 and the bottom electrode thin film 820 may be sputtered in the same sputtering chamber, or may be sputtered in different sputtering chambers, which is not limited herein.
In the embodiment disclosed in the present application, the oxygen-rich resistive film 831 is reduced to obtain an oxygen-poor resistive film 831. At this time, the resistive film 831 in an oxygen-rich state can be obtained in the thin film sputtering chamber 100, so that the target of the thin film sputtering chamber 100 can be completely oxidized, and thus elements in each region of the resistive film 831 are uniformly distributed, so that each region of the resistive film 831 has a uniform stoichiometric ratio of elements, and thus the resistivity of the resistive film 831 is more uniform, thereby improving the performance of the semiconductor memory device.
In addition, since the resistance change film 831 in an oxygen-rich state can be obtained in the film sputtering chamber 100, only sufficient oxygen needs to be introduced, and thus, the flow of oxygen does not need to be accurately controlled, thereby reducing the difficulty in manufacturing the resistance change film 831.
In addition, sufficient oxygen is introduced in the application, and the flow rate of oxygen does not need to be changed, so that the flow rate of oxygen is not easy to change, and the resistance of the resistance change film 831 cannot fluctuate greatly.
Fig. 7 is the coordinates of 49 points acquired on the surface of the wafer 810. Fig. 8 is a graph of the sheet resistance at point 49 of wafer 810. The sheet resistance is used to represent the infrared property measurement of the film, and the sheet resistance is related to the resistivity by: rs ═ ρ/t, where ρ is the resistivity of the resistive film 831 and t is the film thickness. At this point, the thickness of the wafer 810 at 49 points is the same, and the change in resistivity causes the sheet resistance to change. As shown in fig. 8, the sheet resistance of each region in the related art varies greatly, and the sheet resistance in the present application is substantially balanced.
In another optional embodiment, before step S100, the method may further include:
s101, cleaning pretreatment is carried out on the wafer 810.
At this time, the wafer 810 is cleaned before the deposition of the bottom electrode thin film 820 is performed on the wafer 810, so that the cleanliness of the wafer 810 can be improved, and the yield of the semiconductor memory device can be improved. A cleaning pretreatment of the wafer 810 may be performed in the pretreatment chamber 700. The specific structure of the pre-processing chamber 700 is well known in the art and will not be described herein.
In another alternative embodiment, step S200 may include:
s201, loading the target into the film sputtering chamber 100 for sputter depositing the resistive film 831.
Because oxygen is needed to be introduced to completely oxidize the surface of the target material during sputtering, the resistance change target material can be pure metal or oxide. For example, the resistive switching target may be tantalum, tantalum dioxide, or tantalum pentoxide.
S202, the wafer 810 deposited with the bottom electrode thin film 820 is transferred into the thin film sputtering chamber 100.
S203, performing a vacuum process on the film sputtering chamber 100.
The thin film sputtering chamber 100 may be evacuated by a vacuum pump so that the inside of the thin film sputtering chamber 100 is in a vacuum environment. Specifically, the degree of vacuum of the thin film sputtering chamber 100 may be 1 × 10 -7 Pa, although the degree of vacuum of the film sputtering chamber 100 can also be other values, which is not limited herein.
And S204, introducing oxygen at a first preset flow rate into the vacuumized film sputtering chamber 100.
The first predetermined flow rate can be determined according to parameters such as power, pressure and pumping capacity of the thin film sputtering chamber 100. The first predetermined flow of oxygen is required to ensure that the surface of the target in the thin film sputtering chamber 100 is completely oxidized.
And S205, starting the thin film sputtering chamber 100 to sputter deposit a resistive film 831 on the bottom electrode thin film 820.
In this scheme, since the resistance change film 831 in the film sputtering chamber 100 is used for processing an oxygen-rich state, a process window does not need to be found by accurately controlling the flow of oxygen, and only sufficient oxygen needs to be introduced, so that the flow of oxygen does not need to be accurately controlled.
In another alternative embodiment, in step S200, the distance between the target and the bottom electrode thin film 820 may be 5cm to 30cm, the sputtering power may be 10W to 20000W, the flow rate of the oxygen gas may be 1sccm to 1000sccm, the flow rate of the inert gas may be 0sccm to 1000sccm, and the sputtering process time may be 1S to 1000S. At this time, the process parameters of the thin film sputtering chamber 100 are in a more preferable range, so that the thin film sputtering chamber 100 can stably operate, thereby improving the yield of the semiconductor memory device.
In another embodiment, step S300 may include:
s310, the wafer 810 deposited with the oxygen-rich resistive film 831 is transferred into the semiconductor reduction chamber 200 for reducing the oxygen-rich resistive film 831 of the resistive film 831.
S320, introducing a reducing gas into the semiconductor reduction chamber 200, and ionizing the reducing gas to reduce a portion of the resistive film 831 in an oxygen-rich state, the portion having a predetermined thickness.
The ionized reducing gas can react with oxygen ions in the resistance change film 831. The reduction performance of the resistance change film 831 in an oxygen-rich state is improved by ionizing the reduction gas, so that the required resistance change film 831 can be obtained better.
In another alternative embodiment, in step S300, the flow rate of the reducing gas may be 1sccm to 20000sccm, the RF power is 1W to 2000W, and the reduction process time is 10S to 1800S. At this time, the process parameters of the semiconductor reduction chamber 200 are in a more preferable range, so that the thin film sputtering chamber 100 can stably operate, thereby improving the yield of the semiconductor memory device.
Based on the manufacturing process of the semiconductor memory device in any of the above embodiments of the present application, an embodiment of the present application further discloses a semiconductor memory device, and the disclosed semiconductor memory device is manufactured by using the manufacturing process in any of the above embodiments.
In another alternative embodiment, the oxygen content of each of the resistive film 831 in the first direction may be gradually decreased. Wherein the first direction is a direction in which the bottom electrode thin film 820 points to the top electrode thin film 840. The first direction here can also be understood as a deposition direction of the multi-time resistive film 831, that is, a deposition direction of the multi-layer resistive film 831 from bottom to top. Of course, it can also be understood that the lower surface of each resistance change film 831 is directed to the direction of the upper surface.
As shown in fig. 6, after the wafer 810 finishes the primary deposition, the oxygen content of each resistive film 831 along the first direction gradually decreases, that is, the oxygen content of the side far from the wafer 810 is smaller than that of the side near the wafer 810, and the oxygen vacancy is increased as the oxygen content is smaller. As shown in fig. 6, the darker the color of each resistive thin film 831 changes along the first direction, and the darker the color of each resistive thin film 831 in fig. 4 has the higher oxygen content and the lower oxygen content, and the lighter the color has the lower oxygen content and the higher oxygen vacancies. At this time, the oxygen content of the position of each resistive film 831, which is close to the wafer 810, is large, and oxygen vacancies are small, so that the resistive film is in a high-resistance state. The resistance-change film 831 in each layer has a low resistance state because the resistance-change film is in a position far from the wafer 810 and has a small oxygen element content and a large number of oxygen vacancies.
As shown in fig. 6, after the wafer 810 is deposited a plurality of times, the plurality of resistive films 831 in the resistive layer 830 are alternately distributed between a high resistance state and a low resistance state, thereby improving the process performance of the semiconductor memory device.
The resistive film 831 can be obtained by adjusting the thickness of the resistive film 831 deposited once, or adjusting the depth of the resistive film 831 reduced once, or adjusting the time for reducing the resistive film 831 once.
Note that when the oxygen element content of each of the variable resistance films 813 in the first direction is gradually decreased, the oxygen vacancies in the respective regions on the same plane are uniformly distributed, that is, the oxygen vacancies in one cross section of each of the variable resistance films 831 in the direction perpendicular to the thickness direction are uniformly distributed.
In another alternative embodiment, the oxygen element content of each of the resistance change films 813 in the thickness direction thereof is the same. At this time, oxygen vacancies are the same in the thickness direction. Therefore, the oxygen vacancies of the multi-layer resistive thin film 831 are also the same, and the oxygen vacancies of the resistive thin film 831 formed at this time are uniformly distributed, thereby being beneficial to improving the process performance of the semiconductor memory device.
Referring to fig. 4 and 5, the present application further discloses a semiconductor processing apparatus including a thin film sputtering chamber 100, a semiconductor reduction chamber 200, a bottom electrode sputtering chamber 500, and a top electrode sputtering chamber 600.
The wafers 810 may be transferred to and from the bottom electrode sputtering chamber 500, the thin film sputtering chamber 100, the semiconductor reduction chamber 200, and the top electrode sputtering chamber 600. The thin film sputtering chamber 100 is used to deposit the resistive film 831 in an oxygen-rich state on the wafer 810. The semiconductor reduction chamber 200 is configured to reduce the resistive film 831 in an oxygen-rich state, so that a portion of a predetermined thickness of the resistive film 831 is changed from the oxygen-rich state to an oxygen-deficient state. The bottom electrode sputtering chamber 500 is used to deposit a bottom electrode thin film 820 for the wafer 810. The top electrode sputtering chamber 600 is used to deposit a top electrode film 840 for the wafer 810. The thin film sputtering chamber 100 and the semiconductor reduction chamber 200 are located between the bottom electrode sputtering chamber 500 and the top electrode sputtering chamber 600. The thin film sputtering chamber 100 is located between the bottom electrode sputtering chamber 500 and the semiconductor reduction chamber 200. Wherein the content of oxygen element in oxygen-rich state is greater than that in oxygen-poor state.
In the embodiment disclosed in the present application, the oxygen-rich resistive film 831 is reduced to obtain an oxygen-poor resistive film 831. At this time, the resistive thin film 831 in an oxygen-rich state can be obtained in the thin film sputtering chamber 100, so that the target of the thin film sputtering chamber 100 can be completely oxidized, and thus the elements in each region of the resistive thin film 831 are uniformly distributed, so that each region of the resistive thin film 831 has a uniform stoichiometric ratio of the elements, and therefore the resistivity of the resistive thin film 831 is more uniform, thereby improving the performance of the semiconductor memory device
In addition, since the resistance change film 831 in an oxygen-rich state can be obtained in the film sputtering chamber 100, only sufficient oxygen needs to be introduced, and thus, the flow of oxygen does not need to be accurately controlled, thereby reducing the difficulty in manufacturing the resistance change film 831.
In the present application, the bottom electrode thin film 820 and the top electrode thin film 840 are respectively sputter-deposited by using corresponding sputtering chambers, thereby improving the processing efficiency of the semiconductor memory device.
The present application discloses a specific structure of the semiconductor reduction chamber 200, and of course, the semiconductor reduction chamber 200 may have other structures, which is not limited herein. Specifically, the semiconductor reduction chamber 200 may include a chamber body 210, a susceptor 220, and an rf device 230. The chamber body 210 provides an installation space for other constituent components of the semiconductor reduction chamber 200, and also provides a reaction space for the resistive film 831. The susceptor 220 may be disposed within the chamber body 210, and the susceptor 220 may be used to support the wafer 810. The chamber body 210 may be in communication with a supply source of reducing gas, and the rf device 230 may be disposed at the chamber body 210, and the rf device 230 may be used to ionize the reducing gas. The semiconductor reduction chamber 200 in this scheme has fewer parts, a simple structure and is convenient to manufacture.
In the above embodiments, the rf device 230 may include the rf coil 231, the rf coil 231 may be located in the chamber body 210 and arranged along the circumference of the chamber body 210, and the rf coil 231 may be located above the susceptor 220.
In order to improve the reduction efficiency of the semiconductor reduction chamber 200, in another alternative embodiment, the rf device 230 may further include an rf rod 232, a portion of the rf rod 232 extends into the chamber body 210 and is electrically connected to the susceptor 220, and the rf rod 232 is used for applying an rf to the susceptor 220. In this scheme, a radio frequency with a certain power may also be applied to the susceptor 220, so as to improve the bombardment effect of the reducing gas ions on the wafer 810, thereby improving the efficiency of the reducing gas ions in capturing oxygen ions, and further improving the reduction efficiency of the semiconductor reduction chamber 200.
In the above embodiment, the RF rod 232 is exposed to the plasma environment and is easily damaged. To this end, in another alternative embodiment, the semiconductor reduction chamber 200 may further include a support 240, and the support 240 may be used to carry the susceptor 220. The support 240 defines a through-channel, and a portion of the rf rod 232 within the chamber body 210 may be located within the through-channel. In this scheme, the portion of the rf rod 232 located in the chamber body 210 may be hidden in the support 240, so as to be not easily exposed in the plasma environment, so that the rf rod 232 is not easily damaged, and thus the reliability and safety of the rf rod 232 are improved.
In one embodiment, the process parameters of the thin film sputtering chamber 100 may be 3000W, the oxygen flow may be 80sccm, and the sputtering process time may be 60 s. The process parameters of the semiconductor reduction chamber 200 may be that the power of the rf coil 231 is 600W, the power of the rf rod 232 is 50W, the flow rate of the reduction gas may be 1000sccm, and the reduction process time may be 180 s.
In an alternative embodiment, the semiconductor processing equipment disclosed in the embodiment of the present application may further include a vacuum transfer chamber 300 and an atmospheric transfer chamber 400, the vacuum transfer chamber 300 and the atmospheric transfer chamber 400 may transfer the wafer 810 to each other, and the thin film sputtering chamber 100, the semiconductor reduction chamber 200, the bottom electrode sputtering chamber 500, and the top electrode sputtering chamber 600 may transfer the wafer 810 to each other with the vacuum transfer chamber 300. In this case, the vacuum transfer chamber 300 and the atmospheric transfer chamber 400 can perform transfer from a vacuum state to an atmospheric state. The bottom electrode sputtering chamber 500, the thin film sputtering chamber 100, the semiconductor reduction chamber 200, and the top electrode sputtering chamber 600 may enable the mutual transfer of the wafer 810 through the vacuum transfer chamber 300. At this time, the wafer 810 is in a vacuum environment after being transferred into the vacuum transfer chamber 300, so that the transfer process time is short, and the processing efficiency can be improved.
The specific structures of the vacuum transfer chamber 300 and the atmospheric transfer chamber 400 are common knowledge and will not be described in detail herein.
In a specific process, the atmospheric transfer chamber 400 transfers the wafer 810 into the vacuum transfer chamber 300, and the vacuum transfer chamber 300 first transfers the wafer 810 into the bottom electrode sputtering chamber 500. The bottom electrode thin film 820 is firstly deposited in the bottom electrode sputtering chamber 500, then the wafer 810 deposited with the bottom electrode thin film 820 is transferred into the thin film sputtering chamber 100, the resistive film 831 is deposited in the thin film sputtering chamber 100 and then transferred into the semiconductor reduction chamber 200 for reduction, then the wafer 810 is transferred into the top electrode sputtering chamber 600 to be deposited with the top electrode thin film 840, and finally the wafer is transferred out of the semiconductor processing equipment through the vacuum transmission chamber 300 and the atmosphere transmission chamber 400.
In another alternative embodiment, the semiconductor processing apparatus may further include a pre-treatment chamber 700, the pre-treatment chamber 700 being used to clean the wafer 810, the pre-treatment chamber 700 and the vacuum transfer chamber 300 being capable of transferring the wafer 810 to each other, the pre-treatment chamber 700 being located between the bottom electrode sputtering chamber 500 and the atmospheric transfer chamber 400. In this scheme, the pre-processing chamber 700 is used to clean the wafer 810, so that the cleanliness of the wafer 810 can be improved, and the yield of the semiconductor memory device can be improved.
The specific structure of the pre-processing chamber 700 is well known in the art and will not be described herein.
In another alternative embodiment, the atmospheric transfer chamber 400, the pre-treatment chamber 700, the bottom electrode sputtering chamber 500, the thin film sputtering chamber 100, the semiconductor reduction chamber 200, and the top electrode sputtering chamber 600 are sequentially spaced along the circumference of the vacuum transfer chamber 300. Since the transfer between the chambers is performed through the vacuum transfer chamber 300, the chambers are disposed around the vacuum transfer chamber 300, so that the transfer distance of the semiconductor process equipment can be shortened, thereby improving the transfer efficiency of the semiconductor process equipment.
In the above embodiments of the present invention, the difference between the embodiments is mainly described, and different optimization features between the embodiments can be combined to form a better embodiment as long as they are not contradictory, and further description is omitted here in view of brevity of the text.
The above description is only an example of the present invention, and is not intended to limit the present invention. Various modifications and alterations to this invention will become apparent to those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention should be included in the scope of the claims of the present invention.
Claims (11)
1. A process for fabricating a semiconductor memory device, the process comprising:
s100, sputtering and depositing a bottom electrode film (820) on the wafer (810);
s200, sputtering and depositing an oxygen-rich resistive film (831) with a certain thickness on the bottom electrode film (820);
s300, reducing a part with a preset thickness of the resistance change film (831) to enable the part with the preset thickness of the resistance change film (831) to be changed into an oxygen-deficient state from the oxygen-rich state; wherein the content of the oxygen element in the oxygen-rich state is greater than the content of the oxygen element in the oxygen-deficient state;
s400, circularly executing the steps S200 and S300, and sequentially depositing a plurality of resistive films (831) until the total thickness of the resistive films (831) reaches a first thickness to form a resistive layer (830);
s500, sputtering and depositing a top electrode film (840) on the resistance change layer (830).
2. The manufacturing process according to claim 1, further comprising, before step S100:
s101, cleaning pretreatment is carried out on the wafer (810).
3. The manufacturing process of claim 1, wherein step S200 comprises:
loading a target into a thin film sputtering chamber (100) for sputter depositing the resistive thin film (831);
transferring the wafer (810) with the bottom electrode film (820) deposited thereon into the thin film sputtering chamber (100);
carrying out vacuum pumping treatment on the film sputtering chamber (100);
introducing oxygen at a first preset flow into the film sputtering chamber (100) after the vacuum-pumping treatment;
starting the thin film sputtering chamber (100) to sputter deposit the resistive switching film (831) on the bottom electrode film (820).
4. The process of claim 3, wherein in step S200, the distance between the target and the wafer (810) is 5cm to 30cm, the sputtering power is 10W to 20000W, the flow rate of oxygen is 1sccm to 1000sccm, the flow rate of inert gas is 0sccm to 1000sccm, and the sputtering time is 1S to 1000S.
5. The manufacturing process of claim 1, wherein step S300 comprises:
transmitting the wafer (810) deposited with the resistive film (831) in the oxygen-rich state into a semiconductor reduction chamber (200) for reducing the resistive film (831) in the oxygen-rich state;
and introducing a reducing gas into the semiconductor reduction chamber (200), and ionizing the reducing gas to reduce the part of the resistive film (831) in the oxygen-rich state, wherein the part of the resistive film is in the preset thickness.
6. The manufacturing process of claim 5, wherein in step S300, the flow rate of the reducing gas is 1sccm to 20000sccm, the RF power is 1W to 2000W, and the reduction process time is 10S to 1800S.
7. A semiconductor memory device, wherein the semiconductor memory device is manufactured by the manufacturing process of any one of claims 1 to 6.
8. The semiconductor memory device according to claim 7, wherein the oxygen element content of each resistive film (831) in a first direction in which the bottom electrode film (820) is directed to the top electrode film (840) is gradually decreased.
9. The semiconductor processing equipment is characterized by comprising a film sputtering chamber (100), a semiconductor reduction chamber (200), a bottom electrode sputtering chamber (500) and a top electrode sputtering chamber (600);
the bottom electrode sputtering chamber (500), the thin film sputtering chamber (100), the semiconductor reduction chamber (200) and the top electrode sputtering chamber (600) can mutually transmit wafers (810), and the thin film sputtering chamber (100) is used for depositing a resistance change thin film (831) in an oxygen-rich state on the wafers (810); the semiconductor reduction chamber (200) is used for reducing the resistance change film (831) in the oxygen-rich state, so that the part of the preset thickness of the resistance change film (831) is changed from the oxygen-rich state to an oxygen-poor state; the bottom electrode sputtering chamber (500) is used for depositing a bottom electrode film (820) for the wafer (810), the top electrode sputtering chamber (600) is used for depositing a top electrode film (840) for the wafer (810), the film sputtering chamber (100) and the semiconductor reduction chamber (200) are positioned between the bottom electrode sputtering chamber (500) and the top electrode sputtering chamber (600), and the film sputtering chamber (100) is positioned between the bottom electrode sputtering chamber (500) and the semiconductor reduction chamber (200);
wherein the content of the oxygen element in the oxygen-rich state is greater than that in the oxygen-deficient state.
10. The semiconductor processing apparatus of claim 9, wherein the semiconductor reduction chamber (200) comprises a chamber body (210), a susceptor (220), and a radio frequency device (230), the susceptor (220) being disposed within the chamber body (210), the susceptor (220) being configured to support the wafer (810), the chamber body (210) being in communication with a supply of a reducing gas, the radio frequency device (230) being disposed within the chamber body (210), the radio frequency device (230) being configured to ionize the reducing gas.
11. The semiconductor processing apparatus of claim 9, further comprising a vacuum transfer chamber (300), an atmospheric transfer chamber (400), and a pre-treatment chamber (700), the vacuum transfer chamber (300) and the atmospheric transfer chamber (400) may transfer the wafer (810) to each other, the thin film sputtering chamber (100), the semiconductor reduction chamber (200), the bottom electrode sputtering chamber (500), the top electrode sputtering chamber (600) and the pretreatment chamber (700) can realize the mutual transmission of the wafer (810) with the vacuum transmission chamber (300), the pre-processing chamber (700) is used for cleaning the wafer (810), the pre-processing chamber (700) is located between the bottom electrode sputtering chamber (500) and the atmospheric transfer chamber (400).
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