CN114864367A - Medium tube with shielding effect and plasma reaction cavity - Google Patents

Medium tube with shielding effect and plasma reaction cavity Download PDF

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Publication number
CN114864367A
CN114864367A CN202210298918.3A CN202210298918A CN114864367A CN 114864367 A CN114864367 A CN 114864367A CN 202210298918 A CN202210298918 A CN 202210298918A CN 114864367 A CN114864367 A CN 114864367A
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CN
China
Prior art keywords
faraday
layer
medium pipe
shielding
metal coatings
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Pending
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CN202210298918.3A
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Chinese (zh)
Inventor
张朋兵
陈世名
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Shanghai Nippon Semiconductor Equipment Co ltd
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Shanghai Nippon Semiconductor Equipment Co ltd
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Priority to CN202210298918.3A priority Critical patent/CN114864367A/en
Publication of CN114864367A publication Critical patent/CN114864367A/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32651—Shields, e.g. dark space shields, Faraday shields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Plasma Technology (AREA)

Abstract

The embodiment of the present specification provides a medium tube and a plasma reaction chamber with shielding effect, including: a medium pipe; and the Faraday shielding layer is arranged on the surface of the medium tube and is electrically connected with a grounding layer. Through directly setting up faraday shield layer in the medium pipe surface, realize the faraday shield effect to the ICP electrostatic field, can avoid because of faraday shield ring processing preparation or appear the shielding inhomogeneous that the error leads to the electrostatic field when installing.

Description

Dielectric tube with shielding effect and plasma reaction cavity
Technical Field
The specification relates to the technical field of plasma etching, in particular to a medium tube with a shielding effect and a plasma reaction cavity.
Background
In a typical plasma etch process, different process gas combinations (e.g., CxFy, O) 2 Ar, etc.) are subjected to Radio frequency excitation in a Radio frequency (Radio frequency) environment to form a plasma. The formed plasma and the surface of the wafer are subjected to physical bombardment and chemical reaction under the action of electric fields of upper and lower electrodes of the etching cavity, and the treatment process of the design pattern and the key process on the surface of the wafer is completed.Typical etch chambers include both capacitively Coupled Chambers (CCP) and inductively coupled chambers (ICP).
Fig. 1 shows a typical inductively coupled plasma reaction chamber structure, which mainly includes: 1. the plasma processing device comprises a wafer supporting platform, 2, a wafer, 3, a plasma, 4, a trapezoidal medium pipe, 5, an antenna system, 6, a shielding ring, 7, a shielding cover, 8, an air inlet pipe, 9, a cooling fan, 10, a reaction cavity body, 11, a matcher and 12, and a radio frequency power supply. Radio frequency power enters a radio frequency antenna through matching of a matcher, an alternating magnetic field H perpendicular to a current plane is generated by RF current in an antenna coil, and an angular electric field E parallel to the current direction of the coil is induced by the alternating magnetic field H in a medium reaction chamber; the reaction gas generates high-density plasma under the action of the angular electric field; and then the plasma is diffused from the medium reaction chamber to a processing chamber provided with the wafer, and the plasma is gradually accelerated by the bias voltage applied on the wafer to reach the surface of the wafer, so that the etching process of the wafer is completed.
Besides the angular electric field parallel to the current direction of the coil, a radial equivalent electrostatic field (induced by high radio frequency potential on an antenna coil) which points to the central direction of the dielectric tube from the coil exists in the trapezoidal dielectric tube; the electrostatic field makes the plasma sheath on the inner wall of the dielectric tube extremely uneven, enhances the electric field bombardment on the dielectric tube, and easily splashes the dielectric tube material into the plasma environment to cause metal pollution or particle pollution of a semiconductor device. Based on this problem, the conventional solution is to add a faraday shield between the antenna system and the dielectric tube, which is equipotential (grounded) to the cavity, to significantly reduce and homogenize the electrostatic field from the antenna system to the plasma, as shown in fig. 2.
The structure has the defects that the structure is too complex, various errors are introduced in the processing, manufacturing and mounting processes of the Faraday shielding ring, and further the shielding of an electrostatic field is not uniform, so that the shielding effect is influenced.
Disclosure of Invention
Embodiments of the present disclosure provide a dielectric tube and a plasma reaction chamber with shielding effect.
The embodiment of the specification provides the following technical scheme: a dielectric pipe having a shield effect, comprising:
a medium pipe;
the Faraday shielding layer is arranged on the surface of the medium pipe, and the Faraday shielding layer is electrically connected with a grounding layer.
Preferably, the faraday shielding layer is a printed shielding layer formed by printing or evaporating metal on the surface of the medium pipe.
Preferably, the faraday shield material is a good conductor material.
Preferably, the faraday shield material being a good conductor comprises: the Faraday shielding layer material is one of gold, silver, copper, aluminum and nickel.
Preferably, the thickness of the Faraday shielding layer is 1 um-100 um.
Preferably, the medium pipe is made of quartz or ceramic material.
Preferably, the faraday shield layer comprises: the conical metal coatings are uniformly distributed on the surface of the medium pipe and are electrically connected with the grounding layer.
Preferably, the faraday shield layer comprises: the grounding layer is arranged on the base plate and comprises a plurality of annular metal coatings with different diameters and a plurality of connecting metal coatings, wherein the annular metal coatings are connected through the connecting metal coatings, and the connecting metal coatings are electrically connected with the grounding layer.
Preferably, the medium pipe is of a trapezoidal tubular structure;
or the medium pipe is of a flat plate structure.
A plasma reaction cavity comprises a medium pipe as described in any one of the above items, and the medium pipe is arranged inside the reaction cavity.
Compared with the prior art, the embodiment of the specification adopts at least one technical scheme which can achieve the beneficial effects that at least:
directly set up faraday shield layer in the medium pipe surface, realize the faraday shield effect to the ICP electrostatic field, can avoid because of faraday shield ring processing preparation or appear the shielding inhomogeneous that the error leads to the electrostatic field when installing.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings needed to be used in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
FIG. 1 is a schematic diagram of a typical inductively coupled plasma reaction chamber in the prior art;
FIG. 2 is a schematic view of a Faraday shield structure in the prior art;
FIG. 3 is a schematic structural diagram of a dielectric tube with shielding effect according to the present invention;
fig. 4 is a plan view of a dielectric pipe having a shielding effect in fig. 3;
fig. 5 is a top view of a dielectric pipe with shielding effect according to the present invention;
fig. 6 is a top view of a dielectric pipe with shielding effect according to the present invention.
Detailed Description
The embodiments of the present application will be described in detail below with reference to the accompanying drawings.
The following description of the embodiments of the present application is provided by way of specific examples, and other advantages and effects of the present application will be readily apparent to those skilled in the art from the disclosure herein. It is to be understood that the embodiments described are only a few embodiments of the present application and not all embodiments. The present application is capable of other and different embodiments and its several details are capable of modifications and/or changes in various respects, all without departing from the spirit of the present application. It is to be noted that the features in the following embodiments and examples may be combined with each other without conflict. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
It is noted that various aspects of the embodiments are described below within the scope of the appended claims. It should be apparent that the aspects described herein may be embodied in a wide variety of forms and that any specific structure and/or function described herein is merely illustrative. Based on the present application, one skilled in the art should appreciate that one aspect described herein may be implemented independently of any other aspects and that two or more of these aspects may be combined in various ways. For example, an apparatus may be implemented and/or a method practiced using any number and aspects set forth herein. Additionally, such an apparatus may be implemented and/or such a method may be practiced using other structure and/or functionality in addition to one or more of the aspects set forth herein.
It should be noted that the drawings provided in the following embodiments are only for illustrating the basic idea of the present application, and the drawings only show the components related to the present application rather than the number, shape and size of the components in actual implementation, and the type, amount and ratio of the components in actual implementation may be changed arbitrarily, and the layout of the components may be more complicated.
In addition, in the following description, specific details are provided to facilitate a thorough understanding of the examples. However, it will be understood by those skilled in the art that the aspects may be practiced without these specific details.
The technical solutions provided by the embodiments of the present application are described below with reference to the accompanying drawings.
As shown in fig. 3 to 5, a dielectric pipe with shielding effect comprises:
a medium pipe 1;
and the Faraday shielding layer 2 is arranged on the surface of the medium pipe 1, and the Faraday shielding layer 2 is electrically connected with a grounding layer 3.
Through setting up faraday shield layer 2 on medium pipe 1 surface, shield layer 2 ground connection with faraday, realize the faraday shield effect to the ICP electrostatic field, the shielding that can avoid appearing the error and leading to the electrostatic field when can avoiding covering ring processing preparation or installation because of faraday and inhomogeneous.
In some embodiments, the faraday shield layer 2 is a printed shield layer formed by printing or evaporating metal on the surface of the dielectric tube 1.
It should be noted that, the faraday shielding layer 2 is formed on the surface of the medium pipe 1 by means of printing or evaporation, and the faraday shielding layer 2 can be directly arranged on the medium pipe 1, so that the effect of shielding the medium pipe 1 in the using process is ensured, a faraday shielding ring does not need to be additionally arranged outside the medium pipe 1, and the phenomenon that the shielding of the electrostatic field is uneven due to errors generated during the processing and manufacturing or installation of the faraday shielding ring can be avoided.
It should be further noted that, because the faraday shielding layer 2 is arranged on the medium tube in a printing or evaporation manner, the position and thickness of the faraday shielding layer 2 can be easily controlled, so that the electrostatic field can be uniformly shielded, and compared with the case that the faraday shielding ring is additionally arranged outside the medium tube 1, the operation is more convenient under the condition of ensuring better shielding effect.
In some embodiments, the material of the faraday shielding layer 2 is a good conductor material, the faraday shielding layer 2 is made of the good conductor material, and the electrical conductivity of the faraday shielding layer 2 is good, so that the shielding effect of the faraday shielding layer 2 is ensured.
In some embodiments, the faraday shield layer 2 material being a good conductor includes: the Faraday shielding layer 2 is made of one of gold, silver, copper, aluminum and nickel.
It should be noted that the material of the faraday shielding layer 2 is made of a good conductor, the material of the good conductor can be selected from gold, silver, copper, aluminum, nickel, etc., the material of the good conductor has good conductivity, and the material is common and convenient to use, or other good conductors can be selected according to actual conditions.
In some embodiments, the thickness of the faraday shield layer 2 is 1um to 100 um.
The thickness of the faraday shielding layer 2 can be selected from 1um to 100um, the thickness of the faraday shielding layer 2 can be adjusted according to the actual situation of the dielectric tube 1, and a metal layer with a specific thickness is printed or evaporated on the surface of the dielectric tube 1 to form the faraday shielding layer 2.
In some embodiments, the medium pipe 1 is made of quartz or a ceramic material.
The dielectric tube 1 may be made of quartz or ceramic, and has the properties of small thermal expansion coefficient, good thermal stability, good chemical resistance and the like while ensuring the insulation of the dielectric tube 1.
As shown in fig. 3 and 4, in some embodiments, the faraday shield layer 2 includes: the plurality of conical metal coatings 211 are uniformly distributed on the surface of the dielectric tube 1, and the plurality of conical metal coatings 211 are electrically connected with the grounding layer 3.
It should be noted that, a plurality of conical metal coatings 211 are printed or evaporated on the surface of the dielectric tube 1, and the plurality of conical metal coatings 211 are uniformly distributed on the dielectric tube 1 to form the faraday shielding layer 2, so as to ensure the shielding effect, and meanwhile, the plurality of conical metal coatings 211 are electrically connected with the grounding layer 3, so as to ensure the grounding property.
As shown in fig. 5, in some embodiments, the faraday shield layer 2 includes: a plurality of annular metal coatings 221 with different diameters and a plurality of connecting metal coatings 222, wherein the plurality of annular metal coatings 221 are connected through the plurality of connecting metal coatings 222, and the plurality of connecting metal coatings 222 are all electrically connected with the ground layer 3.
It should be noted that, a plurality of annular metal coatings 221 with different diameters are printed or evaporated on the surface of the dielectric tube 1, and the plurality of annular metal coatings 221 are connected by the plurality of connecting metal coatings 222, the plurality of connecting metal coatings 222 can be uniformly distributed on the surface of the dielectric tube 1, and the plurality of connecting metal coatings 222 are electrically connected with the ground layer 3, so as to ensure the grounding performance.
As shown in fig. 3, in some embodiments, the medium pipe 1 has a trapezoidal tubular structure.
The medium pipe 1 may have a trapezoidal tubular structure, and the faraday shield layer 2 may be formed on the medium pipe 1 having a trapezoidal tubular structure by printing or vapor deposition in use.
As shown in fig. 6, in some embodiments, the medium pipe 1 is a flat plate structure.
It should be noted that the medium tube 1 may be a flat plate structure, a plurality of tapered metal coatings are formed on the surface of the medium tube 1 by a printing or evaporation method, and the plurality of tapered metal coatings are uniformly distributed on the surface of the medium tube 1 of the flat plate structure to form the faraday shield layer 2.
Based on the same inventive concept, the embodiments of the present specification provide a plasma reaction chamber, including any one of the medium tubes 1 described above, where the medium tube 1 is disposed inside the reaction chamber.
It should be noted that, the medium pipe 1 is placed inside the reaction chamber, and the faraday shielding layer 2 on the medium pipe 1 is connected with the grounding layer 3, so that the faraday shielding layer 2 and the inside of the reaction chamber are equal in potential, and the faraday shielding layer 2 is ensured to have a good electrostatic field shielding effect during plasma etching.
The embodiments in the present specification are described in a progressive manner, and the same and similar parts among the embodiments can be referred to each other, and each embodiment focuses on the differences from the other embodiments. In particular, for the method embodiments described later, since they correspond to the system, the description is simple, and for the relevant points, reference may be made to the partial description of the system embodiments.
The above description is only for the specific embodiments of the present application, but the scope of the present application is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present application should be covered within the scope of the present application. Therefore, the protection scope of the present application shall be subject to the protection scope of the claims.

Claims (10)

1. A dielectric tube with a shielding effect, comprising:
a medium pipe (1);
the Faraday shielding layer (2) is arranged on the surface of the medium pipe (1), and the Faraday shielding layer (2) is electrically connected with a grounding layer (3).
2. The medium pipe with shielding effect according to claim 1, wherein the faraday shielding layer (2) is a printed shielding layer formed by printing or evaporating metal on the surface of the medium pipe (1).
3. Dielectric tube with shielding effect according to claim 1, characterized in that the material of the Faraday shielding layer (2) is a good conductor material.
4. The medium pipe with shielding effect as claimed in claim 3, wherein the Faraday shielding layer (2) material is a good conductor comprising: the Faraday shielding layer (2) is made of one of gold, silver, copper, aluminum and nickel.
5. The dielectric tube with shielding effect as claimed in claim 1, wherein the thickness of the faraday shielding layer (2) is 1 um-100 um.
6. The dielectric tube with shielding effect as claimed in claim 1, characterized in that the dielectric tube (1) is made of quartz or ceramic material.
7. Medium pipe with shielding effect according to claim 1, characterized in that the faraday shield layer (2) comprises: the dielectric tube comprises a plurality of conical metal coatings (211), wherein the conical metal coatings (211) are uniformly distributed on the surface of the dielectric tube (1), and the conical metal coatings (211) are electrically connected with the grounding layer (3).
8. Medium pipe with shielding effect according to claim 1, characterized in that the faraday shield layer (2) comprises: the grounding layer comprises a plurality of annular metal coatings (221) with different diameters and a plurality of connecting metal coatings (222), wherein the annular metal coatings (221) are connected through the connecting metal coatings (222), and the connecting metal coatings (222) are electrically connected with the grounding layer (3).
9. The medium pipe with shielding effect according to any one of claims 1 to 8, wherein the medium pipe (1) is a trapezoid tubular structure;
or the medium pipe (1) is of a flat plate structure.
10. A plasma reaction chamber, characterized in that it comprises a medium tube (1) according to any of claims 1-9, said medium tube (1) being arranged inside said reaction chamber.
CN202210298918.3A 2022-03-25 2022-03-25 Medium tube with shielding effect and plasma reaction cavity Pending CN114864367A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202210298918.3A CN114864367A (en) 2022-03-25 2022-03-25 Medium tube with shielding effect and plasma reaction cavity

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Application Number Priority Date Filing Date Title
CN202210298918.3A CN114864367A (en) 2022-03-25 2022-03-25 Medium tube with shielding effect and plasma reaction cavity

Publications (1)

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CN114864367A true CN114864367A (en) 2022-08-05

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116133224A (en) * 2023-04-13 2023-05-16 安徽曦融兆波科技有限公司 Resonant antenna device for exciting high-power helicon wave plasma

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116133224A (en) * 2023-04-13 2023-05-16 安徽曦融兆波科技有限公司 Resonant antenna device for exciting high-power helicon wave plasma

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