CN114859651A - Reflection type mask substrate and preparation method thereof, reflection type mask plate and preparation method thereof - Google Patents
Reflection type mask substrate and preparation method thereof, reflection type mask plate and preparation method thereof Download PDFInfo
- Publication number
- CN114859651A CN114859651A CN202210780838.1A CN202210780838A CN114859651A CN 114859651 A CN114859651 A CN 114859651A CN 202210780838 A CN202210780838 A CN 202210780838A CN 114859651 A CN114859651 A CN 114859651A
- Authority
- CN
- China
- Prior art keywords
- ion implantation
- layer
- reflective
- region
- ion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 72
- 238000002360 preparation method Methods 0.000 title claims abstract description 16
- 238000005468 ion implantation Methods 0.000 claims abstract description 242
- 238000000034 method Methods 0.000 claims abstract description 75
- 230000008569 process Effects 0.000 claims abstract description 60
- 230000010363 phase shift Effects 0.000 claims abstract description 45
- 150000002500 ions Chemical class 0.000 claims description 66
- 238000002513 implantation Methods 0.000 claims description 53
- 238000010521 absorption reaction Methods 0.000 claims description 32
- 238000004519 manufacturing process Methods 0.000 claims description 27
- 238000001579 optical reflectometry Methods 0.000 claims description 20
- 229920002120 photoresistant polymer Polymers 0.000 claims description 20
- 239000011651 chromium Substances 0.000 claims description 18
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 14
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 12
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 10
- 229910052804 chromium Inorganic materials 0.000 claims description 10
- 229910052710 silicon Inorganic materials 0.000 claims description 10
- 239000010703 silicon Substances 0.000 claims description 10
- 229910052715 tantalum Inorganic materials 0.000 claims description 8
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 6
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 6
- 229910052799 carbon Inorganic materials 0.000 claims description 6
- 239000011737 fluorine Substances 0.000 claims description 6
- 229910052731 fluorine Inorganic materials 0.000 claims description 6
- 229910052735 hafnium Inorganic materials 0.000 claims description 6
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 6
- 229910052759 nickel Inorganic materials 0.000 claims description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims description 6
- 229910052760 oxygen Inorganic materials 0.000 claims description 6
- 239000001301 oxygen Substances 0.000 claims description 6
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 6
- 229910052721 tungsten Inorganic materials 0.000 claims description 6
- 239000010937 tungsten Substances 0.000 claims description 6
- 238000006073 displacement reaction Methods 0.000 claims description 4
- 230000000694 effects Effects 0.000 abstract description 19
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- 239000000463 material Substances 0.000 description 19
- 238000000206 photolithography Methods 0.000 description 9
- 239000010408 film Substances 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 8
- 230000008033 biological extinction Effects 0.000 description 7
- 230000001965 increasing effect Effects 0.000 description 6
- 238000000151 deposition Methods 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 4
- 238000000231 atomic layer deposition Methods 0.000 description 4
- CXOWYMLTGOFURZ-UHFFFAOYSA-N azanylidynechromium Chemical compound [Cr]#N CXOWYMLTGOFURZ-UHFFFAOYSA-N 0.000 description 4
- XTDAIYZKROTZLD-UHFFFAOYSA-N boranylidynetantalum Chemical compound [Ta]#B XTDAIYZKROTZLD-UHFFFAOYSA-N 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 229910000423 chromium oxide Inorganic materials 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 238000005137 deposition process Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- 239000011733 molybdenum Substances 0.000 description 4
- 238000005240 physical vapour deposition Methods 0.000 description 4
- 238000002310 reflectometry Methods 0.000 description 4
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 3
- 239000006096 absorbing agent Substances 0.000 description 3
- 239000011358 absorbing material Substances 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000001900 extreme ultraviolet lithography Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- 229910052707 ruthenium Inorganic materials 0.000 description 3
- 239000006094 Zerodur Substances 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000001066 destructive effect Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 2
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 2
- 238000002835 absorbance Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
- G03F1/24—Reflection masks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
Abstract
The invention provides a reflection-type mask substrate and a preparation method thereof, and a reflection-type mask plate and a preparation method thereof. In the reflection-type mask substrate and the reflection-type mask, the phase shift pattern of the phase shift region is defined by the ion implantation region in the reflection stack layer, so that a raised phase shift film layer structure generated when the phase shift pattern is formed in a traditional mode is eliminated, and the problem of pattern deviation caused by a shadow effect caused by the raised phase shift film layer structure is effectively solved. In addition, the preparation method of the reflection-type mask correspondingly forms the ion implantation area with the phase shift pattern by using the ion implantation mode, not only can realize process simplification, but also has higher process precision, and is beneficial to improving the graphic precision of the finally defined phase shift mask pattern.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a reflective mask and a preparation method thereof, and a reflective mask substrate and a preparation method thereof.
Background
In semiconductor manufacturing technology, photolithography is an important part of realizing pattern transfer, and with the trend of pattern miniaturization, higher requirements are placed on photolithography technology, for example, a new generation of photolithography technology such as extreme ultraviolet lithography (EUVL) is proposed. Among them, the EUV lithography specifically employs EUV light having a wavelength of 1nm to about 100nm (for example, 13.5 nm) for exposure, and most of the substances have high absorbance to the EUV light, and thus, it is impossible to employ conventional transmission reticles, and further, a reflection reticle is used as a mask for EUV exposure.
A reflective reticle of the prior art generally includes a substrate, a reflective layer disposed on the substrate, and an absorptive layer formed on the reflective layer. Wherein the reflective layer is used for reflecting exposure light; the absorber layer absorbs the exposure light and is patterned in the pattern area of the reticle to define a prescribed pattern (i.e., mask pattern) for integrated circuit fabrication. In performing exposure using a reflection type reticle, it is necessary to make an optical axis of an incident light path obliquely incident on the reticle and guide reflected light reflected by the reticle onto a semiconductor substrate (wafer).
It is known that adding phase shifting regions on a reticle helps to improve lithographic resolution. However, the inventors of the present invention have conducted experiments and studies on the above-mentioned photolithography process, and have found that when a phase shift region is added to a reflective reticle by using a conventional method, a phase shift layer is deposited, and a shadow effect is inevitably generated by photolithography of the phase shift region pattern, resulting in an increase in the deviation between the pattern transferred onto the semiconductor substrate and the mask pattern, and thus, the benefit of improving the photolithography resolution is offset by the shadow effect and the process cost is increased. Specifically, one important reason for inducing pattern shift is: the incident light path is obliquely incident, so that light reflection generated based on a 3D mask pattern defined by the absorption layer has a shadow effect itself, resulting in horizontal-vertical line width deviation (H-V deviation), pattern shift, reduction of depth of focus (DoF) due to mask 3D scattering effect, and the like. The conventional method (etching the reflective layer or depositing the phase shift layer) is used to increase the phase shift region, which further increases the height difference between the patterned reflective region and the patterned absorption region, and increases the shadow effect, thereby increasing the deviation between the pattern copied to the semiconductor substrate and the mask pattern.
Disclosure of Invention
The invention aims to provide a reflection type mask substrate and a reflection type mask plate, which solve the problem of shadow effect of a phase shift area on the reflection type mask plate in the traditional mode.
In order to solve the above technical problem, the present invention provides a reflective mask substrate comprising: the reflective film comprises a substrate, a reflective stack layer and an absorption layer, wherein the reflective stack layer and the absorption layer are formed on the substrate; the reflection stacking layer is provided with a reflection stacking area, wherein an ion implantation area is further formed in the reflection stacking layer and is used for enabling the reflected light of the area where the ion implantation area is located to have a phase difference relative to the reflected light of the area where the non-implantation area is located.
Optionally, at least two ion implantation regions are disposed in the reflective stack layer, and the at least two ion implantation regions are used for generating reflected light with different phase displacement amounts; and/or the at least two ion implantation regions have different light reflectivity.
Optionally, at least one of the implantation depth, the ion species and the ion dose between the at least two ion implantation regions is different.
Optionally, the light reflectivity of the ion implantation region is lower than that of the non-implantation region.
Optionally, the implanted ions in the ion implantation region include one or a combination of aluminum, nickel, tungsten, chromium, tantalum, silicon and hafnium; and/or the implanted ions in the ion implantation region comprise one or a combination of oxygen, nitrogen, carbon and fluorine.
The invention also provides a reflective mask, comprising: the reflective liquid crystal display device includes a substrate, a reflective stack layer formed on the substrate, and an absorption layer in which a mask pattern is formed. The reflection stacking layer is provided with a reflection stacking area, wherein an ion implantation area is further formed in the reflection stacking layer and is used for enabling the reflected light of the area where the ion implantation area is located to have a phase difference relative to the reflected light of the area where the non-implantation area is located.
Optionally, at least two ion implantation regions are disposed in the reflective stack layer, and the at least two ion implantation regions are used for generating reflected light with different phase displacement amounts; and/or the at least two ion implantation regions have different light reflectivity.
Optionally, at least one of the implantation depth, the ion species and the ion dose between the at least two ion implantation regions is different.
Optionally, the at least two ion implantation regions include a first ion implantation region and a second ion implantation region, a depth of the second ion implantation region is greater than a depth of the first ion implantation region, and a mass of ions implanted in the second ion implantation region is less than a mass of ions implanted in the first ion implantation region.
Optionally, the light reflectivity of the ion implantation region is lower than that of the non-implantation region.
Optionally, the ion implantation region is configured to generate reflected light having a phase difference in a range of 90 ° to 200 ° with respect to reflected light generated by the non-implantation region.
Optionally, the implanted ions in the ion implantation region include one or a combination of aluminum, nickel, tungsten, chromium, tantalum, silicon and hafnium; and/or the implanted ions in the ion implantation region comprise one or the combination of oxygen, nitrogen, carbon and fluorine.
The invention also provides a preparation method of the reflection-type mask, which comprises the following steps: manufacturing a mask blank, wherein the mask blank comprises a substrate and a reflection stack layer formed on the substrate; and performing an ion implantation process to form an ion implantation area in the reflection stacking layer, wherein the ion implantation area is used for enabling the reflected light of the area where the ion implantation area is located to have a phase difference relative to the reflected light of the area where the non-implantation area is located. And, the preparation method further comprises: forming an absorption layer on the reflection stack layer, the absorption layer having a mask pattern formed therein
Optionally, the method for forming the ion implantation region includes: and forming a patterned photoresist layer on the reflection stacking layer, and performing an ion implantation process under the mask of the photoresist layer to form the ion implantation area.
Optionally, the method for forming the ion implantation region in the reflective stack layer includes: forming a first patterned photoresist layer on the reflective stack layer, and performing a first ion implantation process to form a first ion implantation region; and forming a patterned second photoresist layer on the reflective stack layer, and performing a second ion implantation process to form a second ion implantation region. Wherein at least one of an implantation depth, an ion species, and an ion dose of the first ion implantation region and the second ion implantation region is different.
The present invention further provides a method for manufacturing a reflective mask substrate, comprising: manufacturing a mask blank, wherein the mask blank comprises a substrate and a reflection stack layer formed on the substrate; performing an ion implantation process to form an ion implantation region in the reflection stack layer, wherein the ion implantation region is used for enabling the reflected light of the region where the ion implantation region is located to have a phase difference relative to the reflected light of the region where the non-implantation region is located; and forming an absorption layer on the reflection stack layer.
In the reflection type mask blank and the reflection type mask blank provided by the invention, the ion implantation area is formed in the reflection stack layer, so that the phase difference of the reflected light of the area in which the ion implantation area is embedded relative to the reflected light of other areas is realized by utilizing the embedded ion implantation area, and the pattern of the phase shift area is defined based on the ion implantation area. Compared with the existing reflection type mask, the reflection type mask provided by the invention has the phase shift region, does not increase the shadow effect caused by high and low patterns, and improves the photoetching resolution. In addition, aiming at the preparation method of the reflection type mask plate and the reflection type mask substrate provided by the invention, the ion implantation area with the phase shift pattern is correspondingly formed by utilizing the ion implantation mode. Therefore, on one hand, the process is simplified, and the mask pattern is higher in precision; on the other hand, the control precision of the implantation depth, the implantation dosage and the implantation energy in the ion implantation process is higher, so that the formed ion implantation area can more accurately meet the requirement of required parameters, and the pattern precision formed by copying the reflection-type mask can be further improved.
Drawings
FIG. 1 is a schematic view of a reflective reticle.
FIG. 2 is a schematic structural diagram of a reflective reticle according to a first embodiment of the invention.
FIG. 3 is a schematic structural diagram of a reflective reticle in a second embodiment of the invention.
Fig. 4 is a schematic flow chart of a manufacturing method of a reflective mask according to an embodiment of the present invention.
Fig. 5-7 are schematic structural views of a reflective reticle in a manufacturing process thereof according to an embodiment of the invention.
Wherein the reference numbers are as follows: 10-a substrate; 20-a reflective stack layer; 30-a phase shifting layer; 100-a substrate; 200-a reflective stack layer; 210 — a first reflective layer; 220-a second reflective layer; 300-ion implantation area; 300 a-a photoresist layer; 310-a first ion implantation region; 320-a second ion implantation region; 400-a cover layer; 500-a light-shielding layer; 600-a conductive layer; a PA-pattern region; BA-boundary region.
Detailed Description
As described in the background, in the existing reflective reticles, the absorber layer is provided over the reflective layer with a 3D pattern, which is prone to shadowing effects that cause the replicated pattern to shift. To improve the resolution of photolithography, a phase shift layer is usually added by thin film deposition and photolithography, which further aggravates the shadow effect. In addition, the 3D pattern of the absorption layer and the phase shift layer also causes scattering effects of light, which in turn results in a decrease in the depth of focus (DOF) of the exposure, reducing the photolithography process window.
For example, referring to fig. 1, the reflective reticle shown in fig. 1 includes a substrate 10, a reflective stack 20 disposed on the substrate 10, and a phase shift layer 30 formed on the reflective stack 20. Wherein the reflective stack layer 20 is used for reflecting the exposure light; the phase shift layer 30 can shift the phase of the light reflected by the corresponding phase region by 180 ° relative to the light reflected by the non-phase region, so as to generate destructive interference between the reflected light of the phase region and the reflected light of the non-phase region due to the phase difference, thereby improving the edge contrast of the reproduced pattern.
However, in the reflective reticle shown in fig. 1, the patterned phase shift layer 30 is formed by depositing a film layer and etching the film layer, and thus the pattern of the phase shift layer 30 is a 3D pattern, which further aggravates the shadow effect that will more easily cause the problem of deviation of the replicated pattern from the mask pattern. Of course, in order to alleviate the shadow effect, the film thickness of the absorption layer or the phase shift layer forming the mask pattern may be thinned, but this requires thinning while ensuring the intrinsic function of the absorption layer or the phase shift layer, so the degree of thinning of the film layer is greatly limited, and the shadow effect cannot be completely avoided.
To this end, the present invention provides a novel reflective mask blank and a reflective reticle, which can achieve a phase shift using an ion implantation region formed in a reflective stack by selectively performing ion implantation on the reflective stack (it can be considered that the formed ion implantation region constitutes a phase shift region). Therefore, the shadow effect caused by high and low patterns is not increased while the phase shift function is provided, and the photoetching resolution is greatly improved.
The reflective mask blank and the manufacturing method thereof, and the reflective mask blank and the manufacturing method thereof according to the present invention are further described in detail with reference to fig. 2 to fig. 7 and a specific embodiment, wherein fig. 2 is a schematic structural diagram of the reflective mask blank according to the first embodiment of the present invention; FIG. 3 is a schematic view of a reflective reticle according to a second embodiment of the present invention; FIG. 4 is a schematic flow chart of a method for manufacturing a reflective reticle in an embodiment of the invention; fig. 5-7 are schematic structural views of a reflective reticle in a manufacturing process thereof according to an embodiment of the invention. The advantages and features of the present invention will become more apparent from the following description. It is to be noted that the drawings are in a very simplified form and are not to precise scale, which is merely for the purpose of facilitating and distinctly claiming the embodiments of the present invention. It will be understood that relative terms, such as "above," "below," "top," "bottom," "above," and "below," as used in the figures, may be used to describe various elements' relationships to one another. These relative terms are intended to encompass different orientations of the elements in addition to the orientation depicted in the figures. For example, if the device were inverted relative to the view in the drawings, an element described as "above" another element, for example, would now be below that element.
< example one >
In the present embodiment, the reflective mask is described in detail with priority to fig. 2. Referring specifically to fig. 2, the reflective reticle in the present embodiment includes: the substrate comprises a substrate 100, a reflective stack layer 200 formed on the substrate 100, and an ion implantation region 300 disposed in the reflective stack layer 200. In an alternative embodiment, an absorption layer (not shown) is further disposed on the reflective stack layer 200, and the absorption layer is, for example, a patterned absorption layer with a mask pattern formed thereon.
Wherein the substrate 100 may be selected from materials with low thermal expansion characteristics and high thermal conductivity. For example, the substrate 100 may be quartz glass, microcrystalline glass (Zerodur), ultra-low expansion coefficient quartz glass (ULE, also called zero expansion glass), or the like. Further, the substrate 100 may include a pattern area PA in which a mask pattern to be transferred onto a semiconductor substrate is disposed, and a boundary area BA located at a periphery of the pattern area PA, and the boundary area BA may be configured to have a low light reflectance or no light reflection (for example, the reflectance of the boundary area BA may be lower than 2%), so that reflected light from the boundary area BA may be reduced or even avoided.
For example, as shown in fig. 2, a light shielding layer 500 is further disposed on the top of the boundary area BA, and the light shielding layer 500 may be formed of a material with a high light absorption coefficient, for example, the material of the light shielding layer 500 may include chromium (Cr) and/or chromium nitride (Cr). Since the light-shielding layer 500 has a high absorptivity to incident light, the reflectance of the boundary area BA can be effectively controlled to be 2% or less.
With continued reference to fig. 2, the reflective stack layer 200 is formed on the surface of the substrate 100 for reflecting incident light. Generally, the reflective stack 200 is required to have a high reflectivity to a specific wavelength of exposure light, for example, the reflectivity of the reflective stack 200 is higher than 60%, preferably higher than 65%. Here, the reflective stack layer 200 may be located on the pattern area PA, and may extend onto the boundary area BA.
In a specific example, the reflective stack layer 200 includes a first reflective layer 210 and a second reflective layer 220 alternately stacked from bottom to top, the first reflective layer 210 has a low refractive index, and the second reflective layer 220 has a high refractive index. Among them, the material of the first reflective layer 210 having a low refractive index may include molybdenum (Mo), and the material of the second reflective layer 220 having a high refractive index includes, for example, silicon (Si). And, the thickness of the first reflective layer 210 and the second reflective layer 220 can be adjusted according to the wavelength of the incident light and/or the requirement of the light reflectivity, for example, the thickness of each of the first reflective layer 210 and the second reflective layer 220 can be set to be 2nm-5 nm. Of course, in other embodiments, the reflective stack layer 200 is not limited to a molybdenum (Mo)/silicon (Si) stack layer, but may Be a ruthenium (Ru)/silicon (Si) stack layer, a molybdenum (Mo)/beryllium (Be) stack layer, or the like.
That is, the reflection stack layer 200 includes the first reflection layer 210 having a low refractive index and the second reflection layer 220 having a high refractive index which are alternately and repeatedly stacked, and a structure in which the low refractive index reflection layer and the high refractive index reflection layer are alternately disposed may particularly constitute a bragg reflection structure. Alternatively, the first reflective layer 210 and the second reflective layer 220 may be alternated cyclically, for example, about 20 times to about 80 times (i.e., 10-40 sets of reflective pairs are formed by the first reflective layer 210 and the second reflective layer 220 in the reflective stack 200). Furthermore, in some embodiments, the bottom-most layer of the reflective stack 200 may correspond to the first reflective layer 210 with a low refractive index, and the top-most layer of the reflective stack 200 may correspond to the second reflective layer 220 with a high refractive index.
With continued reference to fig. 2, an ion implantation region 300 is further formed in the reflective stack layer 200. In this embodiment, the ion implantation area 300 is specifically formed in a portion of the reflection stack layer 200 corresponding to the pattern area PA, and the pattern of the ion implantation area 300 may correspond to the phase shift pattern of the reticle. That is, in the mask blank of this embodiment, the ion implantation area 300 for defining the phase shift pattern is embedded into the reflective stack 200, so that there is no rugged phase shift pattern on the surface of the pattern area PA, thereby reducing the shadow effect caused by the 3D pattern and effectively improving the pattern precision transferred to the semiconductor substrate.
Specifically, the ion implantation region 300 is configured to cause the reflected light L1 generated in the region where the ion implantation region is located to have a phase difference with respect to the reflected light L2 generated in the region where the ion implantation region is not located. It should be noted that the "region where the non-implantation region is located" described herein mainly refers to a region where ions are not implanted in the pattern region PA. That is, there is a Phase difference between the reflected light L1 generated by the light passing through the ion implantation region 300 and the reflected light L2 generated by the non-implantation region, and it is considered that the ion implantation region 300 constitutes a Phase shift region (Phase shift), so that destructive interference can be generated by the Phase difference between the reflected light L1 generated by the ion implantation region 300 and the reflected light L2 generated by the non-implantation region, thereby reducing the exposure energy at the edge of the mask pattern and improving the edge contrast of the exposure pattern. Here, the phase difference of the reflected light L1 generated by the ion implantation region 300 with respect to the reflected light L2 generated by the non-implantation region ranges, for example, from 90 ° to 200 °, and in a more specific example, a phase difference of 160 ° to 200 ° can be further generated by the ion implantation region 300.
Further, the ion implantation region 300 is formed by an ion implantation process, and the ion implantation process is performed to change the optical parameters of the ion implantation region 300, such as changing the refractive index (n) and the extinction coefficient (k) of the region. Wherein, the change of the refractive index (n) is beneficial to realizing the phase adjustment of the reflected light; and, the variation of the extinction coefficient (k) is advantageous to adjust the light reflectivity of the ion implantation region 300, for example, the absorption of incident light by the ion implantation region 300 can be increased, so that the ion implantation region 300 has a lower light reflectivity.
That is, in the present embodiment, the ion implantation region 300 not only can be used to realize the phase shift of the reflected light, but also can absorb a part of the incident light, so that the ion implantation region 300 has a low reflectivity. Therefore, the light reflectance of the ion-implanted region 300 is lower than that of the non-implanted region (for example, as shown in fig. 2, the light reflectance of the reflected light L1 generated by the ion-implanted region 300 is lower than that of the reflected light L2 generated by the non-implanted region). For example, the light reflectance of the reflected light L2 generated by the non-implanted region may be higher than 60%; and, the light reflectivity of the reflected light L1 generated by the ion implantation region 300 may be lower than 30%, and may be even lower than 10%.
It should be noted that, through the ion implantation process, defects are easily generated in the implanted region due to implantation, and the defects absorb light to some extent, thereby reducing the light reflectance of the implanted region. In addition, the ion implantation may damage the reflective layer of the implanted region, thereby affecting the reflective effect of the implanted region and further reducing the light reflectivity of the ion implanted region 300. Based on this, the light reflectivity of the formed ion implantation region 300 can be effectively reduced. In addition, in an alternative scheme, a light absorbing material may be used as the implanted ions to better adjust the extinction coefficient of the ion implantation region 300, so as to achieve a lower light reflectivity.
In a further aspect, the optical parameters of the formed ion implantation region 300 may be adjusted by adjusting the process parameters of the implantation process of the ion implantation region 300; alternatively, the process parameters of the implantation process of the ion implantation region 300 may be adjusted according to the optical parameters desired to be achieved for the ion implantation region 300. For example, the phase shift amount of the ion implantation region 300 with respect to the reflected light is controlled by adjusting the refractive index (n) of the ion implantation region 300 by adjusting the depth, ion type, ion dose, or the like of the ion implantation region 300. For example, the depth, ion type, or ion dose of the ion implantation region 300 may be adjusted to further adjust the extinction coefficient (k) of the ion implantation region 300, and the light reflectance of the ion implantation region 300 may be controlled to meet the requirements. Which comprises the following steps: increasing the implantation energy of the ion implantation to increase the damage to the implantation region, thereby increasing the extinction coefficient of the ion implantation region 300; and/or adjusting ion species (e.g., implanted ions using an absorbing material), etc.
In addition, the process parameters of the implantation process may be adjusted according to the depth requirement of the ion implantation region 300, for example, if the ion implantation region 300 is expected to reach a greater depth, a higher implantation energy, a lighter ion species, or a higher implantation dose may be selected.
In a specific example, the implanted ions in the ion implantation region 300 may include, for example, one or a combination of aluminum (Al), nickel (Ni), tungsten (W), chromium (Cr), tantalum (Ta), silicon (Si), and hafnium (Hf); and/or, the implanted ions in the ion implantation region 300 include one or a combination of oxygen (O), nitrogen (N), carbon (C) and fluorine (F). And, in some embodiments, the ion implantation region 300 may be disposed within the upper 30 sets of reflection pairs within the reflective stack layer 200.
With continued reference to fig. 2, a cover layer 400 is further formed on the surface of the reflective stack layer 200, and the cover layer 400 can be used to protect the reflective stack layer 200 from being damaged and prevent the surface of the reflective stack layer 200 from being oxidized. The material of the capping layer 400 may include ruthenium (Ru), ruthenium oxide, or the like, and the thickness of the capping layer 400 may be, for example, 2nm to 10nm, and in some embodiments, the thickness of the capping layer 400 may be 2nm to 4 nm.
In this embodiment, the ion implantation region 300 may extend from the cap layer 400 down to the reflective stack 200. That is, the ion implantation region 300 extends at least from the top layer of the reflective stack 200 into the layer or layers below it. And, a light-shielding layer 500 positioned in the boundary area BA is formed above the cover layer 400.
Referring again to fig. 2, a conductive layer 600 is further formed on a side of the substrate 100 facing away from the reflective stack 200, a material of the conductive layer 600 may include one or more of chromium (Cr), chromium nitride (CrN), chromium oxide (CrO), tantalum (Ta), and tantalum boride (TaB), and a thickness of the conductive layer 600 is, for example, 20nm to 80 nm.
< example two >
The reflective mask in the present embodiment is provided with at least two types of ion implantation regions. Wherein the at least two ion implantation regions are used for generating reflected light with different phase displacement amounts (for example, different ion implantation regions have different refractive indexes or different depths, etc.); and/or the at least two ion implantation regions have different light reflectivity (e.g., different ion implantation regions have different extinction coefficients or different depths, etc.).
Specifically, at least one of the implantation depth, the ion species and the ion dose between the at least two ion implantation regions is different. That is, each parameter of the plurality of ion implantation regions in the reflective stack layer 200 may be adjusted according to the respective requirement of each ion implantation region, which includes: adjusting the implantation depth, adjusting the type of ions implanted, and adjusting the implantation dose, etc. By adjusting the parameter characteristics of different ion implantation regions, the optical performance of each ion implantation region can be correspondingly adjusted, for example, the phase shift amount generated between different ion implantation regions is different, or the light reflectivity between different ion implantation regions is different.
For example, in the example shown in fig. 3, the ion implantation regions formed in the reflective stack layer 200 include a first ion implantation region 310 and a second ion implantation region 320, and one or more of the implantation depth, the ion species, and the ion dose of the first ion implantation region 310 and the second ion implantation region 320 are different. Taking fig. 3 as an example, the depth of the first ion implantation region 310 is less than the depth of the second ion implantation region 320; in other embodiments, the ion species in the first ion implantation region 310 may also be different from the ion species in the second ion implantation region 320, and the ion dose in the first ion implantation region 310 may also be different from the ion dose in the second ion implantation region 320.
In addition, the ion species can be adjusted correspondingly for the ion implantation regions with different depths, for example, in fig. 3, the depth of the second ion implantation region 320 is greater than the depth of the first ion implantation region 310, so that the mass of the ions implanted in the second ion implantation region 320 can be smaller than the mass of the ions implanted in the first ion implantation region 310.
It should be noted that two kinds of ion implantation regions are illustrated in the example of fig. 3, but three, four, or even more kinds of ion implantation regions may be provided in other examples. In addition, in the present embodiment, reference may be made to the first embodiment for relevant features of the substrate 100, the reflective stack layer 200, the ion implantation region 300, the covering layer 400, the light shielding layer 500 and the conductive layer 600, which are not described herein again.
In summary, in the reflective reticle provided above, by forming the ion implantation region 300 in the reflective stack 200, the reflected light in the region where the embedded ion implantation region is located is out of phase with respect to the reflected light in other regions. Therefore, 3D phase shift patterns on the surface of the reflecting stack layer are eliminated, the surface of the pattern area PA is smoother, the shadow effect caused by high and low patterns is effectively relieved, and the problem of pattern deviation is greatly improved. Moreover, under the action of ion implantation, defects are generated in the ion implantation area 300 and the reflection effect of the reflection stack layer in the area is destroyed, so that the light reflectivity of the ion implantation area 300 is greatly reduced. That is, the ion implantation region 300 not only can achieve phase shift of reflected light, but also has low light reflectivity.
When the exposure process is performed, the incident light is incident on the reflective mask at an oblique angle (for example, an oblique angle of 6 °), and at this time, the non-implantation region can reflect a large amount of reflected light L2 through the reflective stack 200, so as to form a bright region pattern, and the region where the ion implantation region 300 is located will absorb part of the incident light and emit only a small amount of reflected light L1, and the small amount of reflected light L1 can destructively interfere with the reflected light L2, so as to reduce the exposure energy at the edge of the pattern, and improve the edge contrast of the exposed pattern.
Further, as described above, an absorption layer (not shown in the drawings) in which a mask pattern may be formed may be further provided in the reticle. It can be considered that the ion implantation area of the reflective reticle defines a first mask pattern (i.e. a phase shift pattern with a phase shift function), the absorption layer defines a second mask pattern, and the first mask pattern and the second mask pattern in combination define the mask pattern of the reticle. In a specific example, the patterned absorption layer may expose at least a portion of the ion implantation region, and the exposed ion implantation region may be used to implement a phase shift function.
The present embodiment also provides a reflective mask substrate, specifically including: the light-emitting diode comprises a substrate and a reflection stacking layer formed on the substrate, wherein an ion implantation area is further formed in the reflection stacking layer and used for enabling the reflected light of the area where the ion implantation area is located to have a phase difference relative to the reflected light of the area where the non-implantation area is located. It should be noted that the substrate, the reflective stack layer, and the ion implantation region in the reflective mask substrate may be configured as described above, for example, the ion implantation region in the reflective mask substrate may be configured as described in the first embodiment or the second embodiment, and details are not repeated here. And, an absorbing layer, such as an unpatterned absorbing material layer, may also be disposed on the reflective stack layer.
The following description will discuss a production method of the reflective mask blank and the reflective reticle. Referring to fig. 4, the method for manufacturing a reflective reticle in the present embodiment may include the following steps.
Step S100, a mask blank is fabricated, the mask blank including a substrate and a reflective stack layer formed on the substrate.
Step S200, forming a light-shielding layer on the reflective stack layer and covering the boundary region.
Step S300, performing an ion implantation process to form an ion implanted region in the reflective stack layer, where the ion implanted region is used to make the reflected light of the region where the ion implanted region is located have a phase difference with respect to the reflected light of the region where the non-implanted region is located.
The steps in the manufacturing process of the reflective reticle in the present embodiment will be described in detail below with reference to fig. 5 to 7.
In step S100, and with particular reference to fig. 5, a mask blank is fabricated, which includes a substrate 100 and a reflective stack 200 formed on the substrate.
Specifically, the substrate 100 may be selected from materials with low thermal expansion characteristics and high thermal conductivity. For example, the substrate 100 may be quartz glass, microcrystalline glass (Zerodur), ultra-low expansion coefficient quartz glass (ULE, also called zero expansion glass), or the like. Further, the substrate 100 may include a pattern area PA in which a mask pattern to be transferred onto a semiconductor substrate is to be formed, and a boundary area BA located at the periphery of the pattern area PA.
The method for forming the reflective stack layer 200 on the substrate 100 may include: the first and second reflective layers 210 and 220 are repeatedly and alternately formed on the substrate 100 using a deposition process. The deposition process is, for example, a physical vapor deposition Process (PVD), a chemical vapor deposition process (CVD), an atomic layer deposition process (ALD), or the like. And, in order to reduce the thermal stress induced defects of the reflective stack layer 200 during the formation process as much as possible, the deposition temperature of each film layer in the reflective stack layer 200 is as close to room temperature as possible, for example, controlled between room temperature and 100 ℃.
In a specific example, the first reflective layer 210 and the second reflective layer 220 can cyclically alternate 20 to 80 times (i.e., 10 to 40 sets of reflective pairs are formed by the first reflective layer 210 and the second reflective layer 220 in the reflective stack 200), and further, the first reflective layer 210 and the second reflective layer 220 can cyclically alternate 40 to 50 times (20 to 25 sets of reflective pairs are formed correspondingly). And, the thickness of each reflective layer in the reflective stack layer 200 is, for example, 2nm to 5nm, and further, the thickness of each reflective layer can be controlled to 3nm to 4 nm. In addition, the first reflective layer 210 has a low refractive index, and the second reflective layer 220 has a high refractive index, and then the material of the first reflective layer 210 may include, for example, molybdenum (Mo), and the material of the second reflective layer 220 may include, for example, silicon (Si).
With continued reference to FIG. 5, the method of making a mask blank further comprises: a cover layer 400 is formed on the reflective stack layer 200, and the cover layer 400 can be used to protect the reflective stack layer 200 from damage and prevent the surface of the reflective stack layer 200 from being oxidized. Specifically, the capping layer 400 may be formed by a deposition process (e.g., a physical vapor deposition process, a chemical vapor deposition process, an atomic layer deposition process, or the like). The material of the capping layer 400 may include ruthenium (Ru), ruthenium oxide, or the like, and the thickness of the capping layer 400 may be, for example, 2nm to 10nm, and in some embodiments, the thickness of the capping layer 400 may be 2nm to 4 nm.
With continued reference to FIG. 5, the method of making a mask blank further comprises: a conductive layer 600 is formed on a side of the substrate 100 facing away from the reflective stack 200. Specifically, the conductive layer 600 may be deposited on the surface of the substrate 100 facing away from the reflective stack layer 200 by a deposition process (e.g., a physical vapor deposition process, a chemical vapor deposition process, or an atomic layer deposition process). The material of the conductive layer 600 may include one or more of chromium (Cr), chromium nitride (CrN), chromium oxide (CrO), tantalum (Ta), and tantalum boride (TaB), and the thickness of the conductive layer 600 may be, for example, 20nm to 80nm, and further, the thickness of the conductive layer 600 may be controlled, for example, to 60nm to 75 nm.
In step S200, as shown with continued reference to fig. 5, a light-shielding layer 500 is formed on the reflective stack layer 200 and covers the boundary area BA, so that the boundary area BA may be configured to have a low reflectivity or no light reflection is generated.
Specifically, the preparation method of the light shielding layer 500 includes: firstly, depositing a shading material layer, and forming a graphical photoresist layer on the shading material layer, wherein the graphical photoresist layer covers the boundary area BA and exposes the pattern area PA; then, the light-shielding material layer is etched by using the patterned photoresist layer as a mask and stopped on the cover layer 400, thereby forming a light-shielding layer 500 covering the boundary area BA. The light-shielding layer 500 may be formed of a material with a high light absorption coefficient, for example, the material of the light-shielding layer 500 may include chromium (Cr) and/or chromium nitride (Cr). Since the light-shielding layer 500 has a high absorptivity to incident light, the reflectance of the boundary area BA can be effectively controlled to be 2% or less.
In step S300, referring to fig. 6-7 in particular, an ion implantation process is performed to form an ion implantation region 300 in the reflective stack layer 200.
In this embodiment, the ion implantation region 300 specifically extends from the covering layer 400 downward into the reflective stack layer 200, and extends from the top reflective layer of the reflective stack layer 200 downward into the reflective layers below the top reflective layer. And the ion implantation area 300 is formed in the pattern area PA, and the pattern of the ion implantation area 300 corresponds to the mask pattern of the reticle.
Specifically, the method for preparing the ion implantation region 300 includes: firstly, forming a patterned photoresist layer 300a (for example, including spin-coating a photoresist material and sequentially performing an exposure process and a development process to form the patterned photoresist layer 300 a), wherein the pattern of the photoresist layer 300a corresponds to the pattern of an ion implantation region to be formed; then, an ion implantation process is performed under the mask of the photoresist layer 300a, so that the ion implantation region 300 is formed by selectively performing ion implantation on the pattern region PA; the photoresist layer 300a may then be removed, such that a structure such as that shown in fig. 7 may be formed.
The implantation energy, the type and the implantation dose of the ion implantation process may be adjusted according to the parameter requirements of the desired ion implantation region 300. For example, the depth of the formed ion implantation region 300 can be controlled by adjusting the implantation energy; the refractive index (n) and extinction coefficient (k) of the formed ion implantation region 300 can be controlled by adjusting the type and/or implantation dose of the implanted ions. In some embodiments, the ion implantation process is performed at an implantation energy of 5-200 kev and an implantation dose of 1E13 cm -2 - 1E15 cm -2 (ii) a And, the implantation ions in the ion implantation process may include, for example, one or a combination of aluminum (Al), nickel (Ni), tungsten (W), chromium (Cr), tantalum (Ta), silicon (Si), and hafnium (Hf); and/or, the implanted ions in the ion implantation region 300 include one or a combination of oxygen (O), nitrogen (N), carbon (C) and fluorine (F).
It should be noted that after the ion implantation process is performed, the thermal annealing process may not be performed, so as to avoid the mutual influence caused by the diffusion of ions between the first reflective layer 210 and the second reflective layer 220 in the reflective stack 200, and ensure that the light reflectivity of the reflective stack 200 is maintained within a desired range.
In addition, the structure shown in fig. 7 illustrates a case where one type of ion implantation region 300 is formed in the reflective stack layer 200, and the one type of ion implantation region 300 has the same parameters (e.g., has the same depth, the same ion species, and the same implantation dose, etc.), and thus can be formed simultaneously in the same ion implantation process. However, in other examples, two or more ion implantation regions (e.g., the ion implantation regions with different depths shown in fig. 3, or the ion implantation regions with different ion species; or the ion implantation regions with different implantation doses, etc.) are formed in the reflective stack layer 200, and at this time, two or more ion implantation processes may be performed.
Taking the structure shown in fig. 3 as an example, a patterned first photoresist layer may be preferentially formed, and a first ion implantation process is performed to form a first ion implantation region 310; next, a patterned second photoresist layer is formed, and a second ion implantation process is performed to form a second ion implantation region 320. In this embodiment, the depth of the first ion implantation region 310 is smaller than the depth of the second ion implantation region 320, so that the implantation energy of the first ion implantation process is lower than that of the second ion implantation process, and the ions with smaller mass can be implanted into the second ion implantation region 320 to achieve the purpose of implanting the ions into deeper positions.
Further, after forming the reflective stack layer, the method further comprises: forming an absorption layer on the reflection stack layer, the absorption layer having a mask pattern formed therein. In an alternative, the patterned absorber layer is formed before the ion implantation region, that is: a patterned absorption layer is preferentially formed on the reflection stacking layer, and then an ion implantation process is performed to form an ion implantation area in the reflection stacking layer. Alternatively, in another alternative, an ion implantation process may be performed to form an ion implantation region, and then a patterned absorption layer is formed on the reflective stack layer. In this way, the ion implantation region may be used to define a first mask pattern (i.e., a phase shift pattern with a phase shift function), the absorption layer may define a second mask pattern, and the first mask pattern and the second mask pattern may be combined to define a mask pattern of the reticle.
Finally, the method also comprises the step of cleaning and checking the mask plate so as to improve the yield of the prepared mask plate.
In addition, the present embodiment further provides a method for manufacturing a reflective mask substrate, which specifically includes: manufacturing a mask blank, wherein the mask blank comprises a substrate and a reflection stack layer formed on the substrate; and performing an ion implantation process to form an ion implantation area in the reflection stacking layer, wherein the ion implantation area is used for enabling the reflected light of the area where the ion implantation area is located to have a phase difference relative to the reflected light of the area where the non-implantation area is located. It should be appreciated that the methods for fabricating the mask blank and the ion implantation region in the reflective mask blank can be referred to the methods for fabricating the mask blank and the ion implantation region in the mask blank described above, and are not described herein again.
Further, an absorption layer, such as an unpatterned absorption material layer, may also be formed on the reflective stack layer. It is considered that the method for producing a reflective reticle as described above includes a method for producing a reflective mask blank, and the absorbing layer may be further patterned on the basis of the reflective mask blank to form a mask pattern.
In summary, in the methods for manufacturing a mask blank and a mask blank according to the present invention, the ion implantation region for forming the phase shift region is formed by selective ion implantation. Compared with the film layer structure with the 3D mask pattern prepared above the reflection stacking layer (the preparation process comprises film deposition, photoetching, etching and the like), the preparation method provided by the invention has the advantages of simpler process and higher precision. Specifically, the implantation depth, implantation dose and implantation energy can be precisely controlled during the ion implantation process, so that the formed ion implantation region can meet the required parameter requirements, and the phase shift amount, the light reflectivity and the like of the formed ion implantation region can be precisely controlled to meet various requirements. In addition, after the ion implantation process is carried out, the thermal annealing process is not carried out any more, so that the mutual diffusion of ions among the reflecting layers can be effectively avoided, and the reflecting stacked layer in the non-implantation area still has high reflecting performance.
It should be noted that, in the present specification, the embodiments are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments may be referred to each other. Also, while the present invention has been described with reference to the preferred embodiments, the embodiments are not intended to be limiting. It will be apparent to those skilled in the art from this disclosure that many changes and modifications can be made, or equivalents modified, in the embodiments of the invention without departing from the scope of the invention. Therefore, any simple modification, equivalent change and modification made to the above embodiments according to the technical essence of the present invention are still within the protection scope of the technical solution of the present invention, unless the content of the technical solution of the present invention is departed from.
It should be further understood that the terms "first," "second," "third," and the like in the description are used for distinguishing between various components, elements, steps, and the like, and are not intended to imply a logical or sequential relationship between various components, elements, steps, or the like, unless otherwise indicated or indicated. It should also be understood that, as used herein and in the appended claims, the singular forms "a," "an," and "the" include plural referents unless the context clearly dictates otherwise. For example, reference to "a step" or "an apparatus" means a reference to one or more steps or apparatuses and may include sub-steps as well as sub-apparatuses. All conjunctions used should be understood in the broadest sense. And, the word "or" should be understood to have the definition of a logical "or" rather than the definition of a logical "exclusive or" unless the context clearly dictates otherwise. Further, implementation of the methods and/or apparatus of embodiments of the present invention may include performing the selected task manually, automatically, or in combination.
Claims (16)
1. A reflective mask substrate, comprising: the reflective film comprises a substrate, a reflective stack layer and an absorption layer, wherein the reflective stack layer and the absorption layer are formed on the substrate;
the reflection stacking layer is provided with a reflection stacking area, wherein an ion implantation area is further formed in the reflection stacking layer and is used for enabling the reflected light of the area where the ion implantation area is located to have a phase difference relative to the reflected light of the area where the non-implantation area is located.
2. The reflective mask substrate according to claim 1, wherein at least two kinds of ion implantation regions for generating reflected light of different phase displacement amounts are provided in the reflective stack layer; and/or the at least two ion implantation regions have different light reflectivity.
3. The reflective mask substrate of claim 2, wherein at least one of an implantation depth, an ion species and an ion dose are different between said at least two ion implantation regions.
4. The reflective mask substrate of claim 1, wherein the ion implanted region has a light reflectance lower than a light reflectance of the non-implanted region.
5. The reflective mask substrate of claim 1, wherein the implanted ions in said ion implantation region comprise one or a combination of aluminum, nickel, tungsten, chromium, tantalum, silicon, and hafnium; and/or the implanted ions in the ion implantation region comprise one or the combination of oxygen, nitrogen, carbon and fluorine.
6. A reflective reticle, comprising: the light-emitting diode comprises a substrate, a reflection stacking layer and an absorption layer, wherein the reflection stacking layer and the absorption layer are formed on the substrate, and a mask pattern is formed in the absorption layer;
the reflection stacking layer is provided with a reflection stacking area, wherein an ion implantation area is further formed in the reflection stacking layer and is used for enabling the reflected light of the area where the ion implantation area is located to have a phase difference relative to the reflected light of the area where the non-implantation area is located.
7. The reflective reticle of claim 6, wherein at least two ion implanted regions are provided in the reflective stack for producing reflected light of different amounts of phase shift; and/or the at least two ion implantation regions have different light reflectivity.
8. The reflective reticle of claim 7, wherein at least one of a depth of implantation, an ion species and an ion dose differ between the at least two ion implantation zones.
9. The reflective reticle of claim 7, wherein the at least two ion implantation zones comprise a first ion implantation zone and a second ion implantation zone, the second ion implantation zone having a depth greater than the depth of the first ion implantation zone and the second ion implantation zone having a mass of implanted ions that is less than the mass of implanted ions in the first ion implantation zone.
10. The reflective reticle of claim 6, wherein the ion implanted regions have a lower light reflectivity than the non-implanted regions.
11. The reflective reticle of claim 6, wherein the ion implanted regions are configured to produce reflected light with a phase difference in the range of 90 ° -200 ° relative to reflected light produced by non-implanted regions.
12. The reflective reticle of claim 6, wherein the implanted ions in the ion implantation zone comprise one or a combination of aluminum, nickel, tungsten, chromium, tantalum, silicon and hafnium; and/or the implanted ions in the ion implantation region comprise one or the combination of oxygen, nitrogen, carbon and fluorine.
13. A method for manufacturing a reflective mask, comprising: manufacturing a mask blank, wherein the mask blank comprises a substrate and a reflection stack layer formed on the substrate; performing an ion implantation process to form an ion implantation region in the reflection stack layer, wherein the ion implantation region is used for enabling the reflected light of the region where the ion implantation region is located to have a phase difference relative to the reflected light of the region where the non-implantation region is located; and the number of the first and second groups,
the preparation method further comprises the following steps: and forming an absorption layer on the reflection stacking layer, wherein a mask pattern is formed in the absorption layer.
14. The method of manufacturing a reflective reticle of claim 13, wherein forming an ion implanted region within the reflective stack comprises: and forming a patterned photoresist layer on the reflection stacking layer, and performing an ion implantation process under the mask of the photoresist layer to form the ion implantation area.
15. The method of manufacturing a reflective reticle of claim 14, wherein forming an ion implanted region within the reflective stack layer comprises:
forming a first patterned photoresist layer on the reflective stack layer, and performing a first ion implantation process to form a first ion implantation region; and (c) a second step of,
and forming a patterned second photoresist layer on the reflection stack layer, and performing a second ion implantation process to form a second ion implantation region, wherein at least one parameter of implantation depth, ion species and ion dose of the first ion implantation region and the second ion implantation region is different.
16. A method of manufacturing a reflective mask substrate, comprising:
manufacturing a mask blank, wherein the mask blank comprises a substrate and a reflection stack layer formed on the substrate;
performing an ion implantation process to form an ion implantation region in the reflection stack layer, wherein the ion implantation region is used for enabling the reflected light of the region where the ion implantation region is located to have a phase difference relative to the reflected light of the region where the non-implantation region is located; and the number of the first and second groups,
an absorbing layer is formed on the reflective stack layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210780838.1A CN114859651A (en) | 2022-07-05 | 2022-07-05 | Reflection type mask substrate and preparation method thereof, reflection type mask plate and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210780838.1A CN114859651A (en) | 2022-07-05 | 2022-07-05 | Reflection type mask substrate and preparation method thereof, reflection type mask plate and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN114859651A true CN114859651A (en) | 2022-08-05 |
Family
ID=82626228
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210780838.1A Pending CN114859651A (en) | 2022-07-05 | 2022-07-05 | Reflection type mask substrate and preparation method thereof, reflection type mask plate and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN114859651A (en) |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5208125A (en) * | 1991-07-30 | 1993-05-04 | Micron Technology, Inc. | Phase shifting reticle fabrication using ion implantation |
| EP0718691A2 (en) * | 1994-12-20 | 1996-06-26 | Siemens Aktiengesellschaft | Embedded phase shifting photomasks and method for manufacturing same |
| TW371327B (en) * | 1998-05-01 | 1999-10-01 | United Microelectronics Corp | Phase-shifting mask (PSM) and method for making the same |
| US20040241554A1 (en) * | 2003-05-29 | 2004-12-02 | Lsi Logic Corporation, Milpitas, Ca | Ion implantation phase shift mask |
| CN1797192A (en) * | 2004-12-29 | 2006-07-05 | 三星电子株式会社 | Photomasks and methods of manufacturing the same |
| JP2012209481A (en) * | 2011-03-30 | 2012-10-25 | Toppan Printing Co Ltd | Reflective mask blank and method of manufacturing reflective mask blank |
| CN104749871A (en) * | 2013-12-30 | 2015-07-01 | 中芯国际集成电路制造(上海)有限公司 | Mask for reflection type photolithography technology and manufacture method and using method thereof |
| US20200124957A1 (en) * | 2018-10-17 | 2020-04-23 | Astrileux Corporation | Photomask having reflective layer with non-reflective regions |
-
2022
- 2022-07-05 CN CN202210780838.1A patent/CN114859651A/en active Pending
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5208125A (en) * | 1991-07-30 | 1993-05-04 | Micron Technology, Inc. | Phase shifting reticle fabrication using ion implantation |
| EP0718691A2 (en) * | 1994-12-20 | 1996-06-26 | Siemens Aktiengesellschaft | Embedded phase shifting photomasks and method for manufacturing same |
| ATE182411T1 (en) * | 1994-12-20 | 1999-08-15 | Siemens Ag | EMBEDDED PHASE SHIFT MASKS AND METHOD FOR THE PRODUCTION THEREOF |
| TW371327B (en) * | 1998-05-01 | 1999-10-01 | United Microelectronics Corp | Phase-shifting mask (PSM) and method for making the same |
| US20040241554A1 (en) * | 2003-05-29 | 2004-12-02 | Lsi Logic Corporation, Milpitas, Ca | Ion implantation phase shift mask |
| CN1797192A (en) * | 2004-12-29 | 2006-07-05 | 三星电子株式会社 | Photomasks and methods of manufacturing the same |
| JP2012209481A (en) * | 2011-03-30 | 2012-10-25 | Toppan Printing Co Ltd | Reflective mask blank and method of manufacturing reflective mask blank |
| CN104749871A (en) * | 2013-12-30 | 2015-07-01 | 中芯国际集成电路制造(上海)有限公司 | Mask for reflection type photolithography technology and manufacture method and using method thereof |
| US20200124957A1 (en) * | 2018-10-17 | 2020-04-23 | Astrileux Corporation | Photomask having reflective layer with non-reflective regions |
Non-Patent Citations (1)
| Title |
|---|
| 姚汉民 等: "《光学投影曝光微纳加工技术》", 31 December 2006 * |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR100604938B1 (en) | Reflection mask for euvl lithography, fabricating method of the same | |
| JP5711533B2 (en) | Reflective mask, reflective mask blank and manufacturing method thereof | |
| US7960076B2 (en) | Reflective-type mask | |
| US6986974B2 (en) | Attenuated phase shift mask for extreme ultraviolet lithography and method therefore | |
| KR101407230B1 (en) | Blankmask, Photomask and method for fabricating the same | |
| US5589305A (en) | Method of fabricating a reticle | |
| US20070243491A1 (en) | Method of making a semiconductor with a high transmission CVD silicon nitride phase shift mask | |
| WO2020241780A1 (en) | Reflective photomask blanks and reflective photomask | |
| CN1483157A (en) | Attenuating extreme ultraviolet (EUV) phase-shifting mask fabrication method | |
| JP2017076152A (en) | Mask blank, phase shift mask and manufacturing method of semiconductor device | |
| JP2004207593A (en) | Mask for extreme ultra-violet exposure, blank, and method for pattern transfer | |
| CN100428055C (en) | Photolithographic process, photomask and manufacturing thereof | |
| KR100809707B1 (en) | Photomask with improved contrast and method of fabricating the same | |
| JP2006191076A (en) | Reflective photomask and method of manufacturing the same | |
| WO2021085192A1 (en) | Reflective mask and production method for reflective mask | |
| CN114859651A (en) | Reflection type mask substrate and preparation method thereof, reflection type mask plate and preparation method thereof | |
| TWI767369B (en) | Half-tone attenuated phase shift blankmask and photomask for euv lithography | |
| KR101054746B1 (en) | Phase inversion mask for extreme ultraviolet exposure process | |
| JP2021043285A (en) | Reflection type mask | |
| CN112925164B (en) | Photomask and forming method thereof | |
| KR101396849B1 (en) | Blank mask and photomask which has deposition layer on backside, And the process method of thereof | |
| TWI830983B (en) | Phase shift mask for extreme ultraviolet lithography | |
| WO2021125048A1 (en) | Reflective mask blank, reflective mask, reflective mask manufacturing method, and reflective mask correction method | |
| US20110065029A1 (en) | Method of manufacturing mask structure | |
| JP2018151531A (en) | Method for manufacturing transfer mask and method for manufacturing semiconductor device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20220805 |
|
| RJ01 | Rejection of invention patent application after publication |