CN114855271A

CN114855271A - Epitaxial growth device

Info

Publication number: CN114855271A
Application number: CN202210428945.8A
Authority: CN
Inventors: 王树林; 曹建伟
Original assignee: Zhejiang Qiushi Semiconductor Equipment Co Ltd
Current assignee: Zhejiang Jingsheng Photonics Technology Co ltd
Priority date: 2022-04-22
Filing date: 2022-04-22
Publication date: 2022-08-05

Abstract

The application relates to an epitaxial growth device, epitaxial growth device include the furnace body, and the furnace body is equipped with the reaction chamber, is equipped with the first reaction base and the second reaction base that the level set up in the reaction chamber respectively, and first reaction base and second reaction base set up along the horizontal direction interval. The furnace body is also provided with a first air inlet part, a second air inlet part and an air outlet part which are respectively communicated with the reaction cavity, the first reaction base is arranged between the first air inlet part and the air outlet part, and the second reaction base is arranged between the second air inlet part and the air outlet part; the reaction medium can enter the reaction cavity through the first air inlet part and the second air inlet part respectively and leave the reaction cavity through the air outlet part. The application provides an epitaxial growth device has solved the problem that the epitaxial layer output efficiency of current epitaxial furnace is low excessively.

Description

Epitaxial growth device

Technical Field

The application relates to the technical field of semiconductor epitaxial growth, in particular to an epitaxial growth device.

Background

Epitaxial growth is an important part of the semiconductor industry chain, the quality of an epitaxial film directly restricts the performance of subsequent devices, and as the demand for high-quality semiconductor devices in the industry is increasing, high-efficiency high-quality epitaxial equipment gets more and more attention.

Epitaxial growth mainly refers to growing a layer of high-quality thin film on a substrate of a silicon wafer, and there are many methods for growing an epitaxial layer, but most methods are Chemical Vapor Deposition (CVD), which refers to a method in which chemical gas or vapor reacts on the surface of a substrate to synthesize a coating or a nano material. Chemical vapor deposition processes employ two or more reaction media (which are typically gaseous) introduced into a reaction chamber, which react with each other to form a new material that is deposited on the surface of a substrate to form an epitaxial layer. A reaction chamber of the epitaxial furnace is usually provided with a reaction base, that is, each reaction chamber can only process a single epitaxial layer at the same time, which results in low yield efficiency of the existing epitaxial layer.

Disclosure of Invention

Therefore, an epitaxial growth device is needed to be provided, and the problem that the yield efficiency of the epitaxial layer of the conventional epitaxial furnace is too low is solved.

The application provides an epitaxial growth device includes the furnace body, and the furnace body is equipped with the reaction chamber, is equipped with the first reaction base and the second reaction base that the level set up in the reaction chamber respectively, and first reaction base and second reaction base set up along the horizontal direction interval. The furnace body is also provided with a first air inlet part, a second air inlet part and an air outlet part which are respectively communicated with the reaction cavity, the first reaction base is arranged between the first air inlet part and the air outlet part, and the second reaction base is arranged between the second air inlet part and the air outlet part; the reaction medium can enter the reaction cavity through the first air inlet part and the second air inlet part respectively and leave the reaction cavity through the air outlet part.

In one embodiment, the first reaction base and the second reaction base are located at the same level. It will be appreciated that such an arrangement facilitates the simultaneous removal of the silicon wafer from the first reaction base and the silicon wafer from the second reaction base.

In one embodiment, the gas outlet part is positioned in the middle of the furnace body, and the furnace body is in mirror symmetry with respect to a vertical plane where the center line of the gas outlet part is positioned. It will be appreciated that such an arrangement is advantageous to maintain the growth rate of the epitaxial layer on the first reaction substrate and the growth rate of the epitaxial layer on the second reaction substrate to be uniform.

In one embodiment, the epitaxial growth apparatus further comprises a gas supply assembly for supplying the reaction medium, the gas supply assembly is respectively communicated with the first gas inlet part and the second gas inlet part, and the radial flow rate of the reaction medium passing through the first gas inlet part is equal to the radial flow rate of the reaction medium passing through the second gas inlet part. It is understood that such an arrangement is advantageous to maintain the shape of the epitaxial layer on the first reactive substrate and the epitaxial layer on the second reactive substrate consistent.

In one embodiment, the epitaxial growth apparatus further comprises a rotating assembly, the rotating assembly is respectively connected with the first reaction susceptor and the second reaction susceptor, and the rotating assembly can respectively drive the first reaction susceptor and the second reaction susceptor to synchronously rotate. It can be understood that, the arrangement is beneficial to uniformly heating the silicon wafer on the first reaction substrate and the silicon wafer on the second reaction substrate.

In one embodiment, the rotating assembly comprises a rotating driving motor, a rotating transmission worm wheel, a rotating transmission worm, a first rotating rod and a second rotating rod, the rotating transmission worm wheel is connected to an output shaft of the rotating driving motor, and the middle area of the rotating transmission worm is meshed and connected with the rotating transmission worm wheel, so that the rotating driving motor drives the rotating transmission worm wheel to drive the rotating transmission worm to rotate. The two ends of the rotary transmission worm are respectively meshed with the first rotating rod and the second rotating rod to respectively drive the first rotating rod and the second rotating rod to rotate, one end, far away from the rotary transmission worm, of the first rotating rod is connected with the first reaction base to drive the first reaction base to rotate around the central shaft, and one end, far away from the rotary transmission worm, of the second rotating rod is connected with the second reaction base to drive the second reaction base to rotate around the central shaft. It will be appreciated that this arrangement is advantageous to ensure that the first and second reaction bases rotate smoothly.

In one embodiment, the epitaxial growth apparatus further comprises a lifting assembly, wherein the lifting assembly is movably matched with the first reaction base along the vertical direction so as to control the distance between the silicon wafer arranged on the first reaction base and the first reaction base in the vertical direction. The lifting assembly is movably matched with the second reaction base along the vertical direction so as to control the distance between the silicon wafer arranged on the second reaction base and the second reaction base in the vertical direction. It will be appreciated that this arrangement facilitates removal of the silicon wafers from the first and second reaction substrates.

In one embodiment, the lifting assembly comprises a lifting driving motor, a lifting transmission worm wheel, a lifting transmission worm, a first screw rod, a second screw rod, a first ejector pin and a second ejector pin, the lifting transmission worm wheel is connected to an output shaft of the lifting driving motor, and the middle area of the lifting transmission worm is meshed and connected with the lifting transmission worm wheel, so that the lifting driving motor drives the lifting transmission worm wheel to drive the lifting transmission worm to rotate. Two ends of the lifting transmission worm are respectively meshed with the first screw rod and the second screw rod to respectively drive the first screw rod and the second screw rod to move along the vertical direction. One end of the first thimble is connected with the first screw rod, the other end of the first thimble movably penetrates through the first reaction base, and the first screw rod can drive the first thimble to move along the vertical direction so as to push the silicon wafer to be far away from or close to the first reaction base. One end of the second ejector pin is connected with the second screw rod, the other end of the second ejector pin movably penetrates through the second reaction base, and the second screw rod can drive the second ejector pin to move along the vertical direction so as to push the silicon wafer to be far away from or close to the second reaction base.

In one embodiment, the first thimble comprises three first branch thimbles arranged at the same horizontal height, and the three first branch thimbles synchronously move along the vertical direction so as to be used for jacking up the silicon wafer.

In one embodiment, the second thimble comprises three second branch thimbles arranged at the same horizontal height, and the three second branch thimbles synchronously move along the vertical direction so as to be used for jacking up the silicon wafer.

In one embodiment, the epitaxial growth device further comprises a temperature control assembly, and the temperature control assembly is distributed on the outer periphery side of the furnace body. The temperature control assembly comprises a plurality of heating lamp tubes which are uniformly distributed on the upper side and the lower side of the furnace body. It can be understood that the arrangement is beneficial to improving the heating rates of the upper end face and the lower end face of the silicon wafer, and further improving the generation rate of the epitaxial layer. Or the temperature control assembly comprises an electromagnetic coil which is uniformly wound on the outer peripheral side of the furnace body.

Compared with the prior art, the epitaxial growth device that this application provided, because the reaction intracavity of the epitaxial growth device that this application provided is equipped with two reaction bases, including first reaction base and second reaction base, and, the furnace body corresponds first reaction base and second reaction base and is equipped with first portion of admitting air and second portion of admitting air respectively, consequently, two epitaxial layers can be produced simultaneously in the single reaction intracavity, and the current single reaction chamber of relative ratio can only produce an epitaxial layer, and the technical scheme of this application has improved the production efficiency of epitaxial layer greatly. For current mode that piles up through reaction substrate improves the output efficiency of epitaxial layer, the epitaxial growth device that this application provided, first reaction base and second reaction base set up along the horizontal direction interval to, first reaction base is located between first portion of admitting air and the portion of giving vent to anger, and second reaction base is located between second portion of admitting air and the portion of giving vent to anger. That is, the first gas inlet part provides the reaction medium to the first reaction susceptor alone, and the second gas inlet part provides the reaction medium to the second reaction susceptor alone. Therefore, when the first air inlet part and the second air inlet part synchronously intake air, the epitaxial layers can be respectively and independently generated on the first reaction base and the second reaction base, and the condition that the quality of the epitaxial layers is influenced due to the fact that different reaction bases share one air inlet part and the dispersion of reaction media is uneven is avoided.

Drawings

In order to more clearly illustrate the technical solutions in the embodiments or the conventional technologies of the present application, the drawings used in the description of the embodiments or the conventional technologies will be briefly introduced below, it is obvious that the drawings in the description below are only some embodiments of the present application, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.

Fig. 1 is a schematic top view of an epitaxial growth apparatus according to an embodiment of the present disclosure;

fig. 2 is a schematic cross-sectional view of an epitaxial growth apparatus according to an embodiment of the present disclosure;

fig. 3 is a schematic structural diagram of an epitaxial deposition apparatus according to an embodiment of the disclosure;

fig. 4 is a schematic structural diagram of an epitaxial deposition apparatus according to another embodiment provided in the present application;

FIG. 5 is a schematic structural diagram of a forking portion according to an embodiment of the disclosure;

fig. 6 is a schematic structural diagram of an epitaxial deposition apparatus according to still another embodiment of the present disclosure.

Reference numerals are as follows: 100. an epitaxial growth device; 110. a furnace body; 111. a reaction chamber; 112. a first air intake portion; 113. a second air intake portion; 114. an air outlet part; 115. a quartz upper cover; 116. a quartz lower cover; 117. a valve; 120. a first reaction base; 130. a second reaction base; 150. a rotating assembly; 151. a rotary drive motor; 153. rotating a drive worm; 154. a first rotating lever; 155. a second rotating lever; 160. a lifting assembly; 161. a lifting drive motor; 163. a lifting drive worm; 164. a first screw; 165. a second screw; 166. a first thimble; 167. a second thimble; 170. a temperature control assembly; 171. heating the lamp tube; 200. a feeding and discharging platform; 300. an operation table; 310. a first operating region; 320. a second operating area; 330. a transfer table; 340. a partition assembly; 341. sealing the partition plate; 400. a mechanical arm assembly; 410. a first transfer arm; 420. a second transfer arm; 430. a rotating part; 440. a first drive section; 450. a second drive section; 460. a forking section; 461. a first prong; 461a, a first forkhead; 461b, a second fork head; 462. a second jaw; 462a, a third prong; 462b, a fourth prong; 463. a connecting rod; 470. a third transfer arm; 500. a silicon wafer; 610. a loading chamber; 620. an unloading chamber; 630. and (7) a crystal box.

Detailed Description

In the description of the present application, it is to be understood that the terms "center," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," "circumferential," and the like are used in the orientations and positional relationships indicated in the drawings for convenience in describing the present application and for simplicity in description, and are not intended to indicate or imply that the referenced devices or elements must have a particular orientation, be constructed and operated in a particular orientation, and are therefore not to be considered limiting of the present application.

Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In the description of the present application, "plurality" means at least two, e.g., two, three, etc., unless specifically limited otherwise.

In this application, unless expressly stated or limited otherwise, the terms "mounted," "connected," "secured," and the like are to be construed broadly and can include, for example, fixed connections, removable connections, or integral parts; can be mechanically or electrically connected; they may be directly connected or indirectly connected through intervening media, or they may be connected internally or in any other suitable relationship, unless expressly stated otherwise. The specific meaning of the above terms in the present application can be understood by those of ordinary skill in the art as appropriate.

In this application, unless expressly stated or limited otherwise, the first feature "on" or "under" the second feature may be directly contacting the first and second features or indirectly contacting the first and second features through intervening media. Also, a first feature "on," "over," and "above" a second feature may be directly or diagonally above the second feature, or may simply indicate that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature may be directly under or obliquely under the first feature, or may simply mean that the first feature is at a lesser elevation than the second feature.

It will be understood that when an element is referred to as being "secured to" or "disposed on" another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present. The terms "vertical," "horizontal," "upper," "lower," "left," "right," and the like as used herein are for illustrative purposes only and do not denote a unique embodiment.

Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein in the description of the present application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.

Epitaxial growth mainly refers to growing a layer of high-quality thin film on a substrate of a silicon wafer, and there are many methods for growing an epitaxial layer, but most of the methods are Chemical Vapor Deposition (CVD), which refers to a method for synthesizing a coating or a nano material by reacting chemical gases or vapors on the surface of a substrate. Chemical vapor deposition processes employ two or more reaction media (which are typically gaseous) introduced into a reaction chamber, which react with each other to form a new material that is deposited on the surface of a substrate to form an epitaxial layer. A reaction base is usually arranged in a reaction cavity of the epitaxial furnace, namely, each reaction cavity can only process a single epitaxial layer at the same time, so that the output efficiency of the existing epitaxial layer is too low.

Referring to fig. 1 and 2, in order to solve the problem of low epitaxial layer yield efficiency of the conventional epitaxial furnace, an epitaxial growth apparatus 100 provided in the present application includes a furnace body 110, the furnace body 110 is provided with a reaction chamber 111, a first reaction base 120 and a second reaction base 130 horizontally arranged are respectively arranged in the reaction chamber 111, and the first reaction base 120 and the second reaction base 130 are horizontally arranged at intervals. The furnace body 110 is further provided with a first gas inlet portion 112, a second gas inlet portion 113 and a gas outlet portion 114 which are respectively communicated with the reaction chamber 111, the first reaction base 120 is arranged between the first gas inlet portion 112 and the gas outlet portion 114, and the second reaction base 130 is arranged between the second gas inlet portion 113 and the gas outlet portion 114. The reaction medium can enter the reaction chamber 111 through the first and second

gas inlet parts

112 and 113, respectively, and exit the reaction chamber 111 through the gas outlet part 114.

The furnace body 110 of the present application refers to the furnace body 110 of the epitaxial furnace, and the furnace body 110 of the epitaxial furnace includes a quartz upper lid 115 and a quartz lower lid 116. Further, it should be noted that the reaction medium selected for use in the present application is gaseous, although in other embodiments, the form of the reaction medium depends on the epitaxial layer to be produced. The epitaxial growth apparatus 100 according to the present invention is suitable for the growth of other semiconductor epitaxial layers as well as the silicon carbide epitaxial growth.

Because the reaction chamber 111 of the epitaxial growth device 100 provided by the present application is provided with two reaction bases, including the first reaction base 120 and the second reaction base 130, and the furnace body 110 is provided with the first air inlet portion 112 and the second air inlet portion 113 corresponding to the first reaction base 120 and the second reaction base 130, respectively, therefore, two epitaxial layers can be generated simultaneously in a single reaction chamber 111, compared with the existing single reaction chamber 111, only one epitaxial layer can be generated, the technical scheme of the present application greatly improves the generation efficiency of the epitaxial layer.

It should be noted that, in order to improve the epitaxial layer generation efficiency, in the prior art, a plurality of reaction pedestals arranged in a stacked manner are disposed in the reaction chamber 111, and each reaction pedestal can generate one epitaxial layer thereon. However, it is difficult to uniformly distribute the reaction medium entering the reaction chamber 111 over a plurality of reaction substrates stacked, and thus, the quality of the epitaxial layer to be formed may be uneven.

Referring to fig. 1 and 2, in comparison with the conventional epitaxial growth apparatus 100 that increases the yield of the epitaxial layer by stacking the reaction substrates, the epitaxial growth apparatus 100 provided in the present application includes a first reaction substrate 120 and a second reaction substrate 130 that are spaced apart from each other along a horizontal direction, wherein the first reaction substrate 120 is disposed between the first gas inlet portion 112 and the gas outlet portion 114, and the second reaction substrate 130 is disposed between the second gas inlet portion 113 and the gas outlet portion 114. That is, the first gas inlet part 112 supplies the reaction medium to the first reaction susceptor 120 alone, and the second gas inlet part 113 supplies the reaction medium to the second reaction susceptor 130 alone. Thus, when the first air inlet part 112 and the second air inlet part 113 synchronously inlet air, epitaxial layers can be respectively and independently generated on the first reaction base 120 and the second reaction base 130, and the condition that the quality of the epitaxial layers is influenced due to the fact that different reaction bases share one air inlet part and the dispersion of reaction media is uneven is avoided.

It should be noted that the first air intake portion 112 and the second air intake portion 113 may share a single air outlet or may be different air outlets. In the embodiment provided by the present application, the gas outlet portion 114 has only one gas outlet, that is, the first gas inlet portion 112 and the second gas inlet portion 113 share one gas outlet, so that the structure of the epitaxial growth apparatus 100 is simplified, and the volume and the manufacturing cost of the epitaxial growth apparatus 100 are effectively reduced. In other embodiments, the gas outlet portion 114 may further include a plurality of gas outlet ports, and the first gas inlet portion 112 and the second gas inlet portion 113 may further discharge the reaction medium through different gas outlet ports.

In order to improve the uniformity of the epitaxial layer grown on the first reaction substrate 120 and the epitaxial layer grown on the second reaction substrate 130, the following three preferred embodiments are proposed. It should be noted that consistency refers to: the growth rate, yield behavior and growth height of the epitaxial layer on the first reaction pedestal 120 are consistent with those of the epitaxial layer on the second reaction pedestal 130.

Specifically, in one embodiment, as shown in fig. 1 and fig. 2, the gas outlet 114 is located in the middle of the furnace body 110, and the furnace body 110 is mirror-symmetrical with respect to a vertical plane where the center line of the gas outlet 114 is located. In this way, the first air inlet portion 112 and the second air inlet portion 113 disposed on the furnace body 110 are also mirror-symmetrical with respect to the vertical plane where the center line of the air outlet portion 114 is located, and in combination with the air outlet portion 114 located at the middle portion of the furnace body 110, it can be known that the time required for the reaction medium to enter the reaction chamber 111 from the first air inlet portion 112 and leave the reaction chamber 111 from the air outlet portion 114 through the first reaction substrate is the same as the time required for the reaction medium to enter the reaction chamber 111 from the second air inlet portion 113 and leave the reaction chamber 111 from the air outlet portion 114 through the second reaction substrate. Therefore, the growth rate of the epitaxial layer on the first reaction substrate and the growth rate of the epitaxial layer on the second reaction substrate are kept consistent.

Further, in another embodiment, as shown in fig. 1 and 2, the epitaxial growth apparatus 100 further includes a gas supply assembly (not shown) for supplying the reaction medium, the gas supply assembly is respectively communicated with the first gas inlet 112 and the second gas inlet 113, and the radial flow rate of the reaction medium passing through the first gas inlet 112 is equal to the radial flow rate of the reaction medium passing through the second gas inlet 113. That is, the first air intake portion 112 and the second air intake portion 113 share one air supply assembly, and the radial flow rates of intake air from the air supply assembly into the first air intake portion 112 and the second air intake portion 113 are the same. Therefore, the shape of the epitaxial layer on the first reaction substrate is consistent with that of the epitaxial layer on the second reaction substrate.

Further, in another embodiment, as shown in FIG. 2, the first reaction susceptor 120 and the second reaction susceptor 130 may be located at the same level. When the first reaction base 120 and the second reaction base 130 are located at different levels, the silicon wafer 500 on the first reaction base 120 and the silicon wafer 500 on the second reaction base 130 are distributed on different levels, which increases the difficulty in simultaneously taking out the silicon wafer 500 on the first reaction base 120 and the silicon wafer 500 on the second reaction base 130. Therefore, the first reaction susceptor 120 and the second reaction susceptor 130 may be positioned at the same level, and the silicon wafer 500 on the first reaction susceptor 120 and the silicon wafer 500 on the second reaction susceptor 130 are also positioned at the same level, thereby facilitating the simultaneous removal of the silicon wafer 500 on the first reaction susceptor 120 and the silicon wafer 500 on the second reaction susceptor 130.

The epitaxial layer is generated only under a certain temperature condition, and in one embodiment, as shown in fig. 2, the epitaxial growth apparatus 100 further includes a temperature control assembly 170, and the temperature control assembly 170 is distributed on the outer periphery of the furnace body 110. In this embodiment, the temperature control assembly 170 includes a plurality of heating lamps 171, and the plurality of heating lamps 171 are uniformly distributed on the upper and lower sides of the furnace body 110. The first reaction base 120 is provided with a first infrared temperature measuring device (not shown), the first infrared temperature measuring device is electrically connected to the temperature control assembly 170, the first infrared temperature measuring device is used for measuring the temperature of the first reaction base 120 and feeding back the measured temperature data to the temperature control assembly 170, and the temperature control assembly 170 controls the operation of the heating lamp tube 171 according to the temperature data fed back by the first infrared temperature measuring device, so as to adjust the temperature of the first reaction base 120. Similarly, the second reaction base 130 is provided with a second infrared temperature measuring device (not shown), the second infrared temperature measuring device is electrically connected to the temperature control assembly 170, the second infrared temperature measuring device is used for measuring the temperature of the second reaction base 130 and feeding back the measured temperature data to the temperature control assembly 170, and the temperature control assembly 170 controls the operation of the heating lamp tube 171 according to the temperature data fed back by the second infrared temperature measuring device, so as to adjust the temperature of the second reaction base 130. Because the first reaction substrate and the second reaction substrate are both horizontally arranged, the silicon wafer 500 on the first reaction substrate and the silicon wafer 500 on the second reaction substrate are also horizontally arranged, and therefore, the heating lamp tubes 171 are arranged on the upper side and the lower side of the furnace body 110, which is beneficial to improving the heating rate of the upper end face and the lower end face of the silicon wafer 500, and further improving the generation rate of the epitaxial layer. Further, the heating lamps 171 are intensively distributed in the vertical space where the first reaction substrate and the second reaction substrate are located.

In other embodiments, the temperature control assembly 170 further includes an electromagnetic coil (not shown), and the electromagnetic coil is uniformly wound around the outer periphery of the furnace body 110.

In order to heat the silicon wafer 500 on the first reaction substrate and the silicon wafer 500 on the second reaction substrate uniformly, in one embodiment, as shown in fig. 2, the epitaxial growth apparatus 100 further includes a rotating assembly 150, the rotating assembly 150 is respectively connected to the first reaction susceptor 120 and the second reaction susceptor 130, and the rotating assembly 150 can respectively drive the first reaction susceptor 120 and the second reaction susceptor 130 to rotate synchronously.

Note that the synchronous rotation of the first reaction susceptor 120 and the second reaction susceptor 130 means: the first reaction substrate rotates around the center line of the first reaction substrate, and the second reaction substrate rotates around the center line of the second reaction substrate. Strictly speaking, the temperatures of the reaction chamber 111 are not completely the same, and the rotation of the first reaction susceptor 120 is beneficial to keeping the heating conditions of the epitaxial layers of the first reaction substrate consistent, and similarly, the rotation of the second reaction susceptor 130 is beneficial to keeping the heating conditions of the epitaxial layers of the second reaction substrate consistent. Further, the rotation assembly 150 can respectively drive the first reaction susceptor 120 and the second reaction susceptor 130 to synchronously rotate, so that the structure of the epitaxial growth apparatus 100 is simplified, and the synchronism of the epitaxial layer generated on the first reaction susceptor 120 and the epitaxial layer generated on the second reaction susceptor 130 is effectively improved.

Specifically, as shown in fig. 2, the rotation assembly 150 includes a rotation driving motor 151, a rotation transmission worm wheel (not shown) connected to an output shaft of the rotation driving motor 151, a rotation transmission worm 153, a first rotation lever 154, and a second rotation lever 155, and a middle region of the rotation transmission worm 153 is engaged with the rotation transmission worm wheel so that the rotation driving motor 151 drives the rotation transmission worm wheel to rotate the rotation transmission worm 153. It is understood that the rotary drive motor 151 drives the rotary drive worm 153 to rotate through a worm gear structure.

Further, as shown in FIG. 2, two ends of the rotation driving worm 153 are engaged with the first rotation rod 154 and the second rotation rod 155 respectively to drive the first rotation rod 154 and the second rotation rod 155 to rotate, one end of the first rotation rod 154 away from the rotation driving worm 153 is connected to the first reaction susceptor 120 to drive the first reaction susceptor 120 to rotate around the central axis, and one end of the second rotation rod 155 away from the rotation driving worm 153 is connected to the second reaction susceptor 130 to drive the second reaction susceptor 130 to rotate around the central axis. It should be noted that the connection structure between the rotation transmission worm 153 and the first rotation lever 154 may be a worm gear structure. Likewise, the connection structure between the rotation transmission worm 153 and the second rotation lever 155 may also be a worm gear structure. The worm gear structure has a large transmission ratio and smooth transmission, which is beneficial to ensuring smooth rotation of the first reaction base 120 and the second reaction base 130. But not limited thereto, the worm gear structure may be replaced with a belt transmission structure or a gear engagement structure.

In order to facilitate the removal of the silicon wafer 500 from the first reaction substrate and the second reaction substrate, in one embodiment, as shown in fig. 2, the epitaxial growth apparatus 100 further includes a lifting assembly 160, and the lifting assembly 160 is movably engaged with the first reaction susceptor 120 along a vertical direction to control a vertical distance between the silicon wafer 500 disposed on the first reaction susceptor 120 and the first reaction susceptor 120. The lifting assembly 160 is movably engaged with the second reaction base 130 along the vertical direction to control the distance between the silicon wafer 500 disposed on the second reaction base 130 and the second reaction base 130 in the vertical direction. When the growth of the epitaxial layer on the silicon wafer 500 is completed, the lifting assembly 160 controls the silicon wafer 500 to be separated from the first reaction substrate along the vertical direction, and then the silicon wafer 500 can be taken away through the gap between the silicon wafer 500 and the first reaction substrate by using the clamping tool. Similarly, when the growth of the epitaxial layer on the silicon wafer 500 is completed, the lifting assembly 160 controls the silicon wafer 500 to be separated from the second reaction substrate in the vertical direction, and then the silicon wafer 500 can be removed through the gap between the silicon wafer 500 and the second reaction substrate by using the clamping tool.

Specifically, as shown in fig. 2, the lifting assembly 160 includes a lifting driving motor 161, a lifting driving worm gear (not shown), a lifting driving worm 163, a first screw 164, a second screw 165, a first thimble 166 and a second thimble 167, the lifting driving worm gear is connected to an output shaft of the lifting driving motor 161, and a middle region of the lifting driving worm 163 is engaged with the lifting driving worm gear, so that the lifting driving motor 161 drives the lifting driving worm gear to rotate the lifting driving worm 163. It is understood that the elevation driving motor 161 drives the elevation driving worm 163 to rotate through a worm gear structure. Furthermore, in order to improve the stability of the first thimble 166 when jacking the silicon wafer 500, the first thimble 166 includes three first branch thimbles disposed at the same horizontal height, and the three first branch thimbles move synchronously along the vertical direction for jacking the silicon wafer 500. Without limitation, the first thimble 166 may further include 4 thimbles or a number of thimbles greater than 4, which is not limited herein. Similarly, in order to improve the stability of the second thimble 167 in jacking up the silicon wafer 500, the second thimble 167 includes three second branch thimbles disposed at the same horizontal height, and the three second branch thimbles move synchronously along the vertical direction for jacking up the silicon wafer 500. But not limited thereto, the second thimble 167 may further include 4 thimbles or a number of thimbles greater than 4, which is not limited herein.

Two ends of the lifting worm gear 163 are respectively engaged with the first screw 164 and the second screw 165 to respectively drive the first screw 164 and the second screw 165 to move along the vertical direction. It should be noted that the portions where the elevating worm gear 163 and the first screw 164 are engaged with each other are both screw teeth, and it is understood from the transmission characteristics of the double screw teeth that when one of the elevating worm gear 163 and the first screw 164 is fixed along the direction of the self center axis, the other of the elevating worm gear 163 and the first screw 164 moves along the direction of the self center axis. Similarly, the portions where the elevating gear worm 163 and the second screw 165 are engaged with each other are both screw teeth, and when one of the elevating gear worm 163 and the second screw 165 is fixed along the direction of the central axis thereof, the other of the elevating gear worm 163 and the second screw 165 moves along the direction of the central axis thereof. In the present embodiment, the elevating worm gear 163 is fixed along the direction of the central axis thereof, and thus, when the elevating worm gear 163 rotates, both the first screw 164 and the second screw 165 move along the direction of the central axis thereof.

Further, as shown in fig. 2, one end of the first thimble 166 is connected to the first screw 164, and the other end thereof movably penetrates through the first reaction base 120, and the first screw 164 can drive the first thimble 166 to move along the vertical direction so as to push the silicon wafer 500 to move away from or close to the first reaction base 120. One end of the second thimble 167 is connected to the second screw 165, the other end movably penetrates through the second reaction base 130, and the second screw 165 can drive the second thimble 167 to move along the vertical direction so as to push the silicon wafer 500 to be far away from or close to the second reaction base 130. Thus, when the lifting driving motor 161 drives the lifting driving worm 163 to rotate, the lifting driving worm 163 can drive the first screw 164 and the second screw 165 to synchronously move up and down, and further drive the first thimble 166 and the second thimble 167 to synchronously move up and down, so as to finally realize the separation or attachment of the silicon wafer 500 and the first reaction base 120, and the separation or attachment of the silicon wafer 500 and the second reaction base 130.

Further, as shown in fig. 2, the number of the first screws 164 and the number of the first pins 166 are both multiple, the first screws 164 and the first pins 166 are in one-to-one correspondence, the number of the second screws 165 and the number of the second pins 167 are both multiple, and the second screws 165 and the second pins 167 are in one-to-one correspondence. The arrangement of the plurality of first screws 164 and the plurality of first ejector pins 166 corresponding to the first screws 164 is beneficial to improving the stability of the first ejector pins 166 in ejecting the silicon wafer 500, and the silicon wafer 500 is prevented from falling off from the first ejector pins 166. Similarly, the plurality of second screws 165 and the plurality of second ejector pins 167 corresponding to the second screws 165 are arranged, so that the stability of the second ejector pins 167 in ejecting the silicon wafer 500 is improved, and the silicon wafer 500 is prevented from falling off from the second ejector pins 167.

Referring to fig. 3, 4 and 6, the present application further provides an epitaxial deposition apparatus, which includes a loading and unloading table 200, an operation table 300, a robot assembly 400 and a plurality of epitaxial growth devices 100 according to any one of the above embodiments. The loading and unloading platform 200 and the epitaxial growth devices 100 are distributed at the periphery of the operation platform 300 at intervals, one end of the mechanical arm assembly 400 is movably connected with the operation platform 300, the other end of the mechanical arm assembly 400 is used for clamping the silicon wafer 500, and the mechanical arm assembly 400 can transfer the silicon wafer 500 between the loading and unloading platform 200 and the operation platform 300. The reason why the loading and unloading table 200 and the plurality of epitaxial growth apparatuses 100 are spaced apart from each other around the outer circumference of the operation table 300 is that: the loading and unloading table 200 is disposed on one side of the operation table 300, and a plurality of epitaxial growth apparatuses 100 are disposed at intervals at other positions of the operation table 300 where the loading and unloading table 200 is not disposed.

In order to improve the flexibility of the robot arm assembly 400, in one embodiment, as shown in fig. 3 and 4, the robot arm assembly 400 includes a rotation portion 430, a first driving section 440, a second driving section 450, and a forking portion 460, which are sequentially connected, wherein one end of the first driving section 440 is fixedly connected to the rotation portion 430, the other end of the first driving section 440 is movably connected to the second driving section 450, one end of the second driving section 450, which is far away from the first driving section 440, is movably connected to the forking portion 460, and the forking portion 460 can synchronously fork two silicon wafers 500 respectively disposed on the first reaction base 120 and the second reaction base 130. In this way, the robot assembly 400 is rotated to any position by the rotating part 430, and the robot assembly 400 drives the forking part 460 to extend into the reaction chamber 111 to fork the silicon wafer 500 through the extension and retraction of the first driving section 440 and the second driving section 450.

Specifically, two valves 117 are disposed on the side of the furnace body 110, the two valves 117 respectively correspond to the space where the first reaction base 120 is located and the space where the second reaction base 130 is located, the valve 117 of the furnace body 110 is opened first, the lifting assembly 160 controls the first thimble 166 to protrude from the first reaction base along the vertical direction, and the second thimble 167 to protrude from the second reaction base along the vertical direction, then the robot assembly 400 places the substrate on the top end of the first thimble 166 and the top end of the second thimble 167 through the forking portion 460, and then the lifting assembly 160 controls the first thimble 166 to approach the first reaction base along the vertical direction, and controls the second thimble 167 to approach the second reaction base along the vertical direction until the substrate is completely placed on the upper surfaces of the first reaction base 120 and the second reaction base. Then, the valve 117 of the furnace body 110 is closed, and the rotating assembly 150 synchronously controls the first reaction substrate and the second reaction substrate to rotate, until the epitaxial layer is generated on the surface of the substrate. When the growth of the epitaxial layer on the silicon wafer 500 is completed, the lifting assembly 160 controls the silicon wafer 500 to be separated from the first reaction substrate and the second reaction substrate in the vertical direction. Then, the valve 117 of the furnace body 110 is opened, and the robot assembly 400 extends the forking portion 460 into the gap between the silicon wafer 500 and the first reaction substrate and the gap between the silicon wafer 500 and the second reaction substrate, so as to synchronously take away the silicon wafer 500 on the first reaction substrate and the silicon wafer 500 on the second reaction substrate. Thus, the forking portion 460 forks the silicon wafer 500 from the bottom of the silicon wafer 500, which can effectively prevent the forking portion 460 from destroying the epitaxial layer on the upper surface of the silicon wafer 500 when forking the silicon wafer 500.

Further, as shown in fig. 3 and 4, the forking part 460 includes a first fork 461, a second fork 462, and a connecting rod 463 connecting the first fork 461 and the second fork 462, and the first fork 461 and the second fork 462 can synchronously fork two silicon wafers 500 respectively disposed on the first reaction base 120 and the second reaction base 130.

Further, as shown in fig. 5, the first fork 461 includes a first fork 461a and a second fork 461b arranged in a vertical direction, and the first fork 461a and the second fork 461b can be independently moved, respectively. It should be noted that the first fork 461a and the second fork 461b may respectively carry a silicon wafer 500, so that one of the first fork 461a or the second fork 461b may first remove the silicon wafer 500 after the epitaxial layer on the first reaction base 120 is grown, and then the other of the first fork 461a or the second fork 461b may place a new silicon wafer 500 on the first reaction base 120 or the second reaction base 130. Thus, the mechanical arm assembly 400 can complete the feeding and discharging operations of the first reaction base 120 or the second reaction base 130 only by moving once in a large range, and the operating efficiency of the epitaxial deposition equipment is greatly improved.

Likewise, the second prong 462 includes a third prong 462a and a fourth prong 462b that are arranged in the vertical direction, and the third prong 462a and the fourth prong 462b are also independently movable, respectively. Similarly, it should be noted that the third fork 462a and the fourth fork 462b can respectively carry a silicon wafer 500, and thus, one of the third fork 462a or the fourth fork 462b can first remove the silicon wafer 500 after the epitaxial layer growth on the second reaction substrate 130 is completed, and then the other of the third fork 462a or the fourth fork 462b can place a new silicon wafer 500 on the first reaction substrate 120 or the second reaction substrate 130. Thus, the mechanical arm assembly 400 can complete the feeding and discharging operations of the first reaction base 120 or the second reaction base 130 only by moving once in a large range, and the operating efficiency of the epitaxial deposition equipment is greatly improved.

Specifically, as shown in FIG. 2, the first reaction susceptor 120 is disposed on the left side of the reaction chamber 111 corresponding to the second fork 462, and the second reaction susceptor 130 is disposed on the right side of the reaction chamber 111 corresponding to the first fork 461. More specifically, the first fork 461 and the second fork 462 can be designed to enter and exit the reaction chamber 111 for loading and unloading simultaneously, or can be designed to enter and exit the reaction chamber 111 for loading and unloading respectively. In order to improve the processing efficiency of the epitaxial deposition apparatus, it is preferable that the first fork 461 and the second fork 462 enter and exit the reaction chamber 111 simultaneously for loading and unloading.

In order to improve the utilization rate of the robot assembly 400 due to the long growth process time of the epitaxial layer, in one embodiment, as shown in fig. 3, a loading chamber 610 and an unloading chamber 620 are provided between the loading and unloading stage 200 and the operating stage 300, and the robot assembly 400 can transfer the silicon wafer between the loading chamber 610 and the epitaxial growth apparatus 100, or the robot assembly 400 can transfer the silicon wafer between the unloading chamber 620 and the epitaxial growth apparatus 100. Further, in order to facilitate the loading and unloading operations of the robot assembly 400 at the loading and unloading station 200, in one embodiment, as shown in fig. 3, 4 and 6, a plurality of cassettes 630 are further disposed at one side of the loading and unloading station 200, and the robot assembly 400 further includes a third transfer arm 470 disposed at the loading and unloading station 200, wherein the third transfer arm 470 is capable of transferring the silicon wafer 500 between the cassette 630 and the loading chamber 610, or the third transfer arm 470 is capable of transferring the silicon wafer 500 between the cassette 630 and the unloading chamber 620.

Further, in the present embodiment, as shown in fig. 3, the third transfer arm 470 has a single fork arm structure, that is, the third transfer arm 470 only needs to transfer a single silicon wafer 500 at a time. In other embodiments, as shown in fig. 4, the third transfer arm 470 may also be a double wishbone structure, i.e., the third transfer arm 470 is capable of transferring two silicon wafers 500 at a time.

The present application provides an epitaxial deposition apparatus in the following two layouts, specifically as follows.

Example one

As shown in fig. 3 and 4, the operation table 300 includes a first operation area 310 and a second operation area 320, the plurality of epitaxial growth devices 100, the second operation area 320 and the loading and unloading table 200 are respectively disposed on different sides of the first operation area 310, and the plurality of epitaxial growth devices 100 are disposed on different sides of the second operation area 320, that is, the other sides of the second operation area 320 not adjacent to the first operation area 310 are provided with the plurality of epitaxial growth devices 100. The robot arm assembly 400 includes a first transfer arm 410 and a second transfer arm 420, the first transfer arm 410 being disposed at the first operating area 310, and the second transfer arm 420 being disposed at the second operating area 320. And, the first transfer arm 410 can move up and down in a direction perpendicular to the first operating zone 310 for transferring the silicon wafers 500 of different heights. Likewise, the second transfer arm 420 can move up and down in a direction perpendicular to the second operation region 320 for transferring the silicon wafers 500 of different heights. The transfer table 330 is disposed between the first and

second operating areas

310 and 320, the second transfer arm 420 is capable of transferring the silicon wafer 500 between the epitaxial growth apparatus 100 and the transfer table 330 disposed at the outer circumferential side of the second operating area 320, and the first transfer arm 410 is capable of transferring the silicon wafer 500 between the epitaxial growth apparatus 100, the transfer table 330, and the loading and unloading table 200 disposed at the outer circumferential side of the first operating area 310.

Specifically, the silicon wafer 500 on the loading and unloading table 200 needs to be transferred to the transfer table 330 by the first transfer arm 410, and then the second transfer arm 420 transfers the silicon wafer 500 on the transfer table 330 to the epitaxial growth apparatus 100 disposed on the peripheral side of the second operation region 320, or the silicon wafer 500 on the loading and unloading table 200 is directly transferred to the epitaxial growth apparatus 100 disposed on the peripheral side of the first operation region 310 by the first transfer arm 410. Similarly, the silicon wafer 500 in the epitaxial growth apparatus 100 disposed on the peripheral side of the second operation zone 320 is transferred to the transfer table 330 by the second transfer arm 420, and then the first transfer arm 410 transfers the silicon wafer 500 on the transfer table 330 to the loading and unloading table 200. Alternatively, the silicon wafer 500 in the epitaxial growth apparatus 100 disposed on the peripheral side of the first operation region 310 is directly transferred to the loading and unloading table 200 by the first transfer arm 410. So set up, improved silicon chip 500's transportation efficiency greatly, and then improved epitaxial deposition equipment's output efficiency.

In order to facilitate independent maintenance of the first operating area 310 and the second operating area 320, and the first operating area 310 and the second operating area 320 do not affect the operation of each other during the maintenance process, in an embodiment, as shown in fig. 3 and 4, a separating assembly 340 is disposed between the first operating area 310 and the second operating area 320, and the separating assembly 340 can separate an operating space where the first operating area 310 is located and an operating space where the second operating area 320 is located into two closed spaces. Specifically, the partition assembly 340 includes a sealing housing (not shown) disposed outside the first operating area 310 and the second operating area 320, and a sealing partition 341 disposed between the first operating area 310 and the second operating area 320.

Further, it should be noted that, in the first embodiment, the following two expansion schemes may also be provided:

the first expansion scheme is as follows: the side of the second operation region 320 not adjacent to the first operation region 310 may further be provided with a third operation region (not shown), and similarly, the side of the third operation region not adjacent to the second operation region 320 may further be provided with a fourth operation region (not shown), the side of the fourth operation region not adjacent to the third operation region may further be provided with a fifth operation region (not shown), and so on.

The second expansion scheme is as follows: the side of the first operation region 310 not adjacent to the second operation region 320 may further have a third operation region (not shown), a fourth operation region (not shown), a fifth operation region (not shown), and so on.

The difference between the first and second embodiments is that in the first embodiment, a plurality of different operating zones are connected end to end and arranged in a serpentine shape. In the second variant, a plurality of different operating zones each surround the first operating zone 310. Obviously, the number of operation regions that can be accommodated by the first expansion scheme is far greater than that of the operation regions that can be accommodated by the second expansion scheme.

Preferably, in one embodiment, as shown in fig. 3, the first operating area 310 and the second operating area 320 are both square areas, the second operating area 320 and the loading and unloading platform 200 are respectively disposed on two opposite sides of the first operating area 310, two opposite epitaxial growth devices 100 are disposed on two sides of the first operating area 310 where the second operating area 320 and the loading and unloading platform 200 are not disposed, and one epitaxial growth device 100 is disposed on each of three sides of the second operating area 320 where the first operating area 310 is not disposed. Thus, three epitaxial growth devices 100 are arranged on the periphery of the second operation area 320, and two epitaxial growth devices 100 are arranged on the periphery of the first operation area 310, that is, the epitaxial deposition equipment can synchronously grow the epitaxial layers of 10 silicon wafers 500, so that the yield of the silicon wafers 500 of the epitaxial deposition equipment is greatly improved. Moreover, the intervals between different epitaxial growth devices 100 are large, which is beneficial to the maintenance of epitaxial deposition equipment.

Example two

As shown in fig. 6, the operation table 300 has a polygonal shape, the loading and unloading table 200 and the plurality of epitaxial growth apparatuses 100 are disposed in different lateral regions of the operation table 300, and the robot assembly 400 is capable of transferring the silicon wafer 500 between the epitaxial growth apparatuses 100 and the loading and unloading table 200. Specifically, in an embodiment, the operation platform 300 is octagonal, the loading and unloading platform 200 is disposed on one side of the operation platform 300, and 5 sides far away from the loading and unloading platform 200 are respectively provided with 5 epitaxial growth apparatuses 100. Therefore, the epitaxial deposition equipment can synchronously grow 10 epitaxial layers of the silicon wafer 500, and the yield of the silicon wafer 500 of the epitaxial deposition equipment is greatly improved.

The technical features of the embodiments described above may be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the embodiments described above are not described, but should be considered as being within the scope of the present specification as long as there is no contradiction between the combinations of the technical features.

The above-mentioned embodiments only express several embodiments of the present application, and the description thereof is more specific and detailed, but not construed as limiting the claims. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the concept of the present application, which falls within the scope of protection of the present application. Therefore, the protection scope of the present application shall be subject to the appended claims.

Claims

1. The epitaxial growth device is characterized by comprising a furnace body (110), wherein the furnace body (110) is provided with a reaction cavity (111), a first reaction base (120) and a second reaction base (130) which are horizontally arranged are respectively arranged in the reaction cavity (111), and the first reaction base (120) and the second reaction base (130) are arranged at intervals along the horizontal direction; the furnace body (110) is further provided with a first air inlet part (112), a second air inlet part (113) and an air outlet part (114) which are respectively communicated with the reaction cavity (111), the first reaction base (120) is arranged between the first air inlet part (112) and the air outlet part (114), and the second reaction base (130) is arranged between the second air inlet part (113) and the air outlet part (114); the reaction medium can enter the reaction chamber (111) through the first air inlet part (112) and the second air inlet part (113) and leave the reaction chamber (111) through the air outlet part (114), respectively.

2. Epitaxial growth device according to claim 1, characterized in that the first reaction pedestal (120) and the second reaction pedestal (130) are located at the same level.

3. The epitaxial growth device according to claim 1, characterized in that the gas outlet (114) is located in the middle of the furnace body (110), and the furnace body (110) is mirror symmetric with respect to a vertical plane on which the center line of the gas outlet (114) is located.

4. Epitaxial growth apparatus according to claim 1, further comprising a gas supply assembly for supplying a reaction medium, the gas supply assembly communicating with the first gas inlet (112) and the second gas inlet (113), respectively, and the radial flow rate of the reaction medium through the first gas inlet (112) being equal to the radial flow rate of the reaction medium through the second gas inlet (113).

5. The epitaxial growth apparatus according to claim 1, further comprising a rotation assembly (150), wherein the rotation assembly (150) is connected to the first reaction susceptor (120) and the second reaction susceptor (130), respectively, and the rotation assembly (150) can drive the first reaction susceptor (120) and the second reaction susceptor (130) to rotate synchronously.

6. The epitaxial growth device according to claim 5, characterized in that the rotation assembly (150) comprises a rotation driving motor (151), a rotation transmission worm wheel, a rotation transmission worm (153), a first rotation rod (154) and a second rotation rod (155), the rotation transmission worm wheel is connected to the output shaft of the rotation driving motor (151), the middle region of the rotation transmission worm (153) is engaged with the rotation transmission worm wheel, so that the rotation driving motor (151) drives the rotation transmission worm wheel to rotate the rotation transmission worm (153);

the both ends of rotation transmission worm (153) mesh respectively and connect first dwang (154) with second dwang (155), in order to drive respectively first dwang (154) with second dwang (155) rotation, first dwang (154) are kept away from the one end of rotation transmission worm (153) is connected first reaction base (120), in order to drive first reaction base (120) centers on the center pin rotation, states second dwang (155) and keeps away from the one end of rotation transmission worm (153) is connected second reaction base (130), in order to drive second reaction base (130) centers on the center pin rotation.

7. The epitaxial growth apparatus according to claim 1, further comprising a lift assembly (160), wherein the lift assembly (160) is movably engaged with the first reaction susceptor (120) along a vertical direction to control a vertical distance between a silicon wafer (500) disposed on the first reaction susceptor (120) and the first reaction susceptor (120); the lifting assembly (160) is movably matched with the second reaction base (130) along the vertical direction so as to control the distance between the silicon wafer (500) arranged on the second reaction base (130) and the second reaction base (130) in the vertical direction.

8. The epitaxial growth device according to claim 7, wherein the lifting assembly (160) comprises a lifting driving motor (161), a lifting transmission worm gear, a lifting transmission worm (163), a first screw (164), a second screw (165), a first thimble (166) and a second thimble (167), the lifting transmission worm gear is connected to an output shaft of the lifting driving motor (161), and a middle region of the lifting transmission worm (163) is engaged with the lifting transmission worm gear, so that the lifting driving motor (161) drives the lifting transmission worm gear to drive the lifting transmission worm (163) to rotate;

two ends of the lifting transmission worm (163) are respectively meshed with the first screw (164) and the second screw (165) to respectively drive the first screw (164) and the second screw (165) to move along the vertical direction;

one end of the first thimble (166) is connected with the first screw (164), the other end of the first thimble (166) movably penetrates through the first reaction base (120), and the first screw (164) can drive the first thimble (166) to move along the vertical direction so as to push the silicon wafer (500) to be far away from or close to the first reaction base (120);

one end of the second ejector pin (167) is connected with the second screw rod (165), the other end of the second ejector pin movably penetrates through the second reaction base (130), and the second screw rod (165) can drive the second ejector pin (167) to move along the vertical direction so as to push the silicon wafer (500) to be far away from or close to the second reaction base (130).

9. The epitaxial growth apparatus according to claim 8, characterized in that the first thimble (166) comprises three first branch thimbles arranged at the same level, and the three first branch thimbles move synchronously in a vertical direction for jacking up the silicon wafer (500); and/or the presence of a catalyst in the reaction mixture,

the second thimble (167) comprises three second branch thimbles arranged at the same horizontal height, and the three second branch thimbles synchronously move along the vertical direction so as to jack up the silicon wafer (500).

10. The epitaxial growth device according to claim 1, further comprising a temperature control assembly (170), wherein the temperature control assembly (170) is distributed on the outer periphery side of the furnace body (110);

the temperature control assembly (170) comprises a plurality of heating lamp tubes (171), and the heating lamp tubes (171) are uniformly distributed on the upper side and the lower side of the furnace body (110);

or the temperature control assembly (170) comprises an electromagnetic coil which is uniformly wound on the outer peripheral side of the furnace body (110).