CN114854037B - Cobalt (II) complex with semiconductor property and preparation method thereof - Google Patents
Cobalt (II) complex with semiconductor property and preparation method thereof Download PDFInfo
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- XLJKHNWPARRRJB-UHFFFAOYSA-N cobalt(2+) Chemical compound [Co+2] XLJKHNWPARRRJB-UHFFFAOYSA-N 0.000 title claims abstract description 39
- 239000004065 semiconductor Substances 0.000 title claims abstract description 15
- 238000002360 preparation method Methods 0.000 title claims abstract description 9
- ARCGXLSVLAOJQL-UHFFFAOYSA-N trimellitic acid Chemical compound OC(=O)C1=CC=C(C(O)=O)C(C(O)=O)=C1 ARCGXLSVLAOJQL-UHFFFAOYSA-N 0.000 claims abstract description 19
- -1 5,5' -bipyridine dithiophene Chemical compound 0.000 claims abstract description 13
- 239000003446 ligand Substances 0.000 claims abstract description 12
- 239000000126 substance Substances 0.000 claims abstract description 5
- 239000002184 metal Substances 0.000 claims description 12
- 229910052751 metal Inorganic materials 0.000 claims description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 12
- 238000006243 chemical reaction Methods 0.000 claims description 10
- 239000000725 suspension Substances 0.000 claims description 10
- 239000008367 deionised water Substances 0.000 claims description 7
- 229910021641 deionized water Inorganic materials 0.000 claims description 7
- 239000000203 mixture Substances 0.000 claims description 6
- 150000001868 cobalt Chemical class 0.000 claims description 5
- 229910017052 cobalt Inorganic materials 0.000 claims description 5
- 239000010941 cobalt Substances 0.000 claims description 5
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical class [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 5
- 239000003960 organic solvent Substances 0.000 claims description 5
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 claims description 4
- 229910002651 NO3 Inorganic materials 0.000 claims description 4
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 claims description 3
- 238000001914 filtration Methods 0.000 claims description 3
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 claims description 2
- 238000001816 cooling Methods 0.000 claims description 2
- 238000002156 mixing Methods 0.000 claims description 2
- VLTRZXGMWDSKGL-UHFFFAOYSA-M perchlorate Inorganic materials [O-]Cl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-M 0.000 claims description 2
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 claims description 2
- 230000035484 reaction time Effects 0.000 claims description 2
- 238000004729 solvothermal method Methods 0.000 claims description 2
- 238000001132 ultrasonic dispersion Methods 0.000 claims description 2
- 150000003841 chloride salts Chemical class 0.000 claims 1
- 239000013078 crystal Substances 0.000 abstract description 8
- 229910021645 metal ion Inorganic materials 0.000 abstract description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- 238000003786 synthesis reaction Methods 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 3
- 239000004810 polytetrafluoroethylene Substances 0.000 description 3
- 239000011148 porous material Substances 0.000 description 3
- 229910001220 stainless steel Inorganic materials 0.000 description 3
- 239000010935 stainless steel Substances 0.000 description 3
- 150000003577 thiophenes Chemical class 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000000862 absorption spectrum Methods 0.000 description 2
- 150000004696 coordination complex Chemical class 0.000 description 2
- 238000002447 crystallographic data Methods 0.000 description 2
- ZMXDDKWLCZADIW-UHFFFAOYSA-N dimethylformamide Substances CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 2
- 239000008204 material by function Substances 0.000 description 2
- 125000004433 nitrogen atom Chemical group N* 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 238000002371 ultraviolet--visible spectrum Methods 0.000 description 2
- 229910021536 Zeolite Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000002041 carbon nanotube Substances 0.000 description 1
- 229910021393 carbon nanotube Inorganic materials 0.000 description 1
- 238000006555 catalytic reaction Methods 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013256 coordination polymer Substances 0.000 description 1
- 229920001795 coordination polymer Polymers 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- HNPSIPDUKPIQMN-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Al]O[Al]=O HNPSIPDUKPIQMN-UHFFFAOYSA-N 0.000 description 1
- 238000000921 elemental analysis Methods 0.000 description 1
- 238000004146 energy storage Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000005984 hydrogenation reaction Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000005389 magnetism Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000013110 organic ligand Substances 0.000 description 1
- 238000000634 powder X-ray diffraction Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000027756 respiratory electron transport chain Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 150000003384 small molecules Chemical class 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 229930192474 thiophene Natural products 0.000 description 1
- 239000010457 zeolite Substances 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G83/00—Macromolecular compounds not provided for in groups C08G2/00 - C08G81/00
- C08G83/008—Supramolecular polymers
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- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F15/00—Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic Table
- C07F15/06—Cobalt compounds
- C07F15/065—Cobalt compounds without a metal-carbon linkage
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
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Abstract
The invention discloses a cobalt (II) complex with semiconductor property and a preparation method thereof. The chemical formula of the complex is [ Co (C) 18 H 12 S 2 N 2 )(C 9 H 4 O 6 )(H 2 O) 2 ] n Is pink crystal, takes 5,5' -bipyridine dithiophene as main ligand and 1,2, 4-benzene tricarboxylic acid as auxiliary ligand, co 2+ Is metal ion and is prepared under solvothermal condition. The experimental results show that: the cobalt (II) complex has the performance of a semiconductor at normal temperature. The preparation method provided by the invention is simple, low in cost, high in yield, high in purity and good in reproducibility, and has potential application value in the field of semiconductors.
Description
Technical Field
The invention relates to the field of metal complexes, in particular to a cobalt (II) complex with semiconductor properties and a preparation method thereof.
Background
The metal coordination polymer, which is called as metal complex for short, is a solid crystalline material which is assembled by organic ligand and metal ion or metal cluster unit through coordination bond, and has the characteristics of high porosity, low density, large specific surface area, regular pore canal, adjustable and modifiable pore diameter, various topological structures, tailorability and the like. Is an important novel porous material except zeolite and carbon nano tubes, and has been widely used in gas storage and separation, catalysis, fluorescence, magnetism, small molecule identification and energy storage in recent years. The study of the photoelectric properties of the metal complex is not sufficient compared with the conventional properties described above. Conjugated thiophenes are a very important and useful class of compounds in the preparation of electronic and optical materials because of their good electron transfer ability and rigid structure. However, from the reported metal complexes, the metal complexes using conjugated thiophene compounds as ligands have been reported very little so far, so that the preparation of metal complexes with semiconductor properties by using conjugated thiophene compounds as ligands not only can provide more novel metal complexes in the field of coordination chemistry, but also can expand the research scope of semiconductor functional materials, and therefore, the metal complexes with stable synthetic structure, simple synthesis and semiconductor properties are important research contents of coordination chemistry and functional materials.
Disclosure of Invention
The object of the present invention is to provide a cobalt (II) complex having semiconducting properties.
Another object of the present invention is to provide a method for preparing the above cobalt (II) complex having semiconducting properties, with simple steps.
In order to achieve the above purpose, the technical scheme adopted by the invention is as follows:
in a first aspect, the present invention provides a cobalt (II) complex having semiconducting properties, the complex being prepared as Co 2+ Is metal ion, 5' -bipyridine dithiophene (bpbp) is used as main ligand, 1,2, 4-benzene tricarboxylic acid (H 3 bta) is an auxiliary ligand, and is prepared by a solvothermal method; the chemical formula of the cobalt (II) complex is shown as formula 1:
in a second aspect, the present invention also provides a method for preparing the cobalt (II) complex having semiconducting properties described above, comprising the steps of:
s1, ligand 5,5' -bipyridine dithiophene (bpbp) and 1,2, 4-benzene tricarboxylic acid (H) at normal temperature 3 bta) and cobalt metal salts according toMolar ratio (1-1.5): (1-1.5): 1, mixing to obtain a mixture;
s2, adding an organic solvent into the mixture obtained in the step S1 to obtain a suspension I, and performing ultrasonic dispersion on the suspension I;
s3, adding deionized water into the suspension I treated in the step S2 to obtain a suspension II;
s4, heating the suspension II treated in the step S3 at the temperature of 80-100 ℃ for reaction;
s5, after the reaction is finished, naturally cooling to room temperature, and filtering to obtain the cobalt (II) complex.
Preferably, the metal cobalt salt in step S1 is selected from one or more of nitrate, acetate, carbonate, perchlorate or chloride of cobalt.
More preferably, the metal cobalt salt in step S1 is selected from one or more of nitrate, acetate and chloride of cobalt.
Preferably, the organic solvent in step S2 is selected from one or more of methanol, N '-dimethylformamide or N, N' -dimethylacetamide.
Preferably, the ultrasonic power in the step S2 is 300W, and the ultrasonic time is 15-30 minutes.
Preferably, the volume ratio of the deionized water in the step S3 to the organic solvent in the step S2 is 1 (1-4).
Preferably, the reaction time of the heating reaction in step S4 is 2 to 4 days.
Compared with the prior art, the invention has the following beneficial effects:
1. the preparation method provided by the invention is simple, low in cost, high in yield, high in purity and good in reproducibility;
2. the cobalt (II) complex obtained by the method has better semiconductor performance and can be applied to the field of semiconductors.
Drawings
FIG. 1 is a diagram of the coordination environment of a cobalt (II) complex prepared according to the present invention;
FIG. 2 is a one-dimensional chain structure of the cobalt (II) complex prepared according to the present invention;
FIG. 3 is an XRD powder diffraction pattern of a cobalt (II) complex prepared according to the present invention;
FIG. 4 is a solid ultraviolet-visible absorption spectrum of the cobalt (II) complex prepared according to the present invention;
FIG. 5 is a graph of the Kubelka-Munk function of the cobalt (II) complex prepared according to the present invention.
Detailed Description
The invention will be described in further detail with reference to the drawings and the specific examples.
Example 1: synthesis of cobalt (II) complexes
1mmol Co (NO) 3 ) 2 ·6H 2 O, 1mmol of 5,5' -bipyridyl dithiophene (bpbp), 1mmol of 1,2, 4-benzenetricarboxylic acid (H) 3 bta) was dispersed in 3mL of n, n' -dimethylacetamide, mixed, ultrasonically dispersed at room temperature for 15 minutes, then, after adding 3mL of deionized water into the above mixture, transferred to a 15mL stainless steel water thermal reaction kettle containing polytetrafluoroethylene lining, reacted for 3 days at 85 ℃, after the reaction kettle was naturally cooled to room temperature, filtered to obtain pink cobalt (II) complex, the yield was 56%. The chemical formula of the complex is [ Co (C) 18 H 12 S 2 N 2 )(C 9 H 4 O 6 )(H 2 O) 2 ] n Elemental analysis: c,51.96; h,3.26; n,4.55%, C 27 H 19 CoN 2 O 8 S 2 Theoretical value C,52.01; h,3.23; n,4.49%. Infrared absorption spectrum data (KBr, cm) -1 ):3414(w),1682(s),1609(vs),1486(w),1441(w),1380(s),1280(w),1230(m),1066(w),1019(w),910(w),824(w),796(m),704(w),614(w)。
Structural characterization of cobalt (II) complexes:
(1) X-ray single crystal diffraction
Single crystals of the appropriate size were selected under a microscope and subjected to X-ray single crystal diffraction experiments at room temperature. The X-ray single crystal diffraction data is measured by a Bruker Smart Apex II CCD diffractometer, the graphite-monochromized Mo K alpha (lambda= 0.071073 nm) radiation is taken as a light source, the collected data is subjected to absorption correction by SADABS, and the crystal structure is solved by a direct method by using a SHELXTL program. The coordinates of the non-hydrogen atoms are the following number of rounds of difference Fourier synthesisDetermined continuously in the middle based on F 2 And finishing the coordinates and the anisotropic parameters of all the non-hydrogen atoms by a least square method. All the hydrogen atoms on the carbon are obtained according to theoretical hydrogenation. The crystallographic data of the complexes are shown in the following table.
Table 1 Crystal data of the complexes
a R 1 ＝Σ||F 0 |–|F c ||/Σ|F 0 |, b wR 2 ＝Σ[w(F 0 2 –F c 2 ) 2 ]/Σ[w(F 0 2 ) 2 ] 1/2 ；where w＝1/[σ 2 (F o 2 )+(aP) 2 +bP],P＝(F o 2 +2F c 2 )/3
The chemical formula of the cobalt (II) complex is [ Co (C) 18 H 12 N 2 ) 2 (C 9 H 4 O 6 )(H 2 O) 2 ] n Belongs to a triclinic system, the space group is P-1 (No. 2), and the unit cell parameters are as follows:
α＝80.8910(10)°，β＝97.491(3)°，γ＝88.1410(10)°；
t=296 (2) K, the minimum asymmetric structural unit in the crystal structure of the cobalt (II) complexThe unit contains two Co (II) ions with a crystallographic occupancy of 0.5, a 5,5' -bipyridine dithiophene (bpbp) ligand, a partially deprotonated 1,2, 4-benzene tricarboxylic acid (Hbta) 2- ) A ligand and two coordinated water molecules. Wherein Co1 is partially deprotonated with two nitrogen atoms of two crystallographically symmetric 5,5' -bipyridyl dithiophenes (bpbp), two crystallographically symmetric 1,2, 4-benzenetricarboxylic acid (Hbta) 2- ) Co2 coordinates with two nitrogen atoms of two crystallographically symmetric 5,5 '-bipyridyl dithiophenes (bpbp) and four crystallographically symmetric coordinated water molecules to form a coordination mode shown in fig. 1, and a one-dimensional chain structure shown in fig. 2 is formed by bridging with the 5,5' -bipyridyl dithiophenes (bpbp).
(2) X-ray powder diffraction
The cobalt (II) complex of the invention is selected in proper amount, powder diffraction measurement is carried out on a Bruker D8 type X-ray diffractometer at room temperature, the test result is shown in figure 3, and the experimental measured spectrogram and the simulated spectrogram can be well matched, so that the synthesized complex is a pure phase.
(3) Solid UV-visible spectrum testing
A suitable amount of the cobalt (II) complex of example 1 was selected and subjected to solid ultraviolet-visible spectrum testing at room temperature in Shimadzu UV-3600i Plus, the test results are shown in FIG. 4, and it can be seen that the cobalt (II) complex has a broad absorption band in the range of 300-600nm, indicating that the material has a response in the visible range.
Converting the diffuse reflectance data into a Kubelka-Munk function to obtain the band gap value (E) of the cobalt (II) complex of the present invention g ) As shown in FIG. 5, E g This illustrates that the cobalt (II) complexes of the invention can be used as semiconductor materials with potential applications at 1.95 eV.
Example 2: synthesis of cobalt (II) complexes
1mmol Co (CH) 3 COO) 2 ·4H 2 O, 1mmol of 5,5' -bipyridyl dithiophene (bpbp), 1mmol of 1,2, 4-benzenetricarboxylic acid (H) 3 bta) was dispersed in 3mL of methanol, mixed, sonicated at room temperature for 15 minutes, and then transferred to a 15mL polytetrafluoroethylene-containing liner after adding 5mL of deionized water to the above mixtureThe stainless steel water thermal reaction kettle reacts for 3 days at 100 ℃, and after the reaction kettle is naturally cooled to room temperature, pink cobalt (II) complex is obtained by filtering, and the yield is 50%.
Example 3: synthesis of cobalt (II) complexes
1mmol of CoCl 2 ·6H 2 O, 1mmol of 5,5' -bipyridyl dithiophene (bpbp), 1mmol of 1,2, 4-benzenetricarboxylic acid (H) 3 bta) was dispersed in 3mL of n, n' -dimethylformamide, mixed, sonicated at room temperature for 15 minutes, then, after adding 4mL of deionized water to the above mixture, transferred to a 15mL stainless steel water thermal reactor containing polytetrafluoroethylene lining, reacted at 90 ℃ for 3 days, after the reactor was naturally cooled to room temperature, filtered to obtain pink cobalt (II) complex with a yield of 46%.
Claims (6)
1. A cobalt (II) complex having semiconducting properties, characterized in that the complex is prepared by reacting Co 2+ Is prepared by a solvothermal method by taking 5,5' -bipyridine dithiophene as a main ligand and 1,2, 4-benzene tricarboxylic acid as an auxiliary ligand; the chemical formula of the cobalt (II) complex is shown as formula 1:
1 (1)
The preparation method comprises the following steps:
s1, ligand 5,5' -dipyridyl dithiophene, 1,2, 4-benzene tricarboxylic acid and metal cobalt salt are mixed according to the mol ratio (1-1.5): (1-1.5): 1, mixing to obtain a mixture;
s2, adding an organic solvent N, N' -dimethylacetamide into the mixture obtained in the step S1 to obtain a suspension I, and performing ultrasonic dispersion on the suspension I;
s3, adding deionized water into the suspension I treated in the step S2 to obtain a suspension II;
s4, heating the suspension II treated in the step S3 at the temperature of 80-100 ℃ for reaction;
s5, after the reaction is finished, naturally cooling to room temperature, and filtering to obtain the cobalt (II) complex.
2. A cobalt (II) complex having semiconducting properties according to claim 1, wherein the metallic cobalt salt in step S1 is selected from one or more of the nitrate, acetate, carbonate, perchlorate or chloride salts of cobalt.
3. A cobalt (II) complex having semiconducting properties according to claim 1, wherein the metallic cobalt salt in step S1 is selected from one or more of the nitrate, acetate and chloride of cobalt.
4. The cobalt (II) complex having semiconductor properties according to claim 1, wherein the ultrasonic power in step S2 is 300W and the ultrasonic time is 15 to 30 minutes.
5. The cobalt (II) complex having semiconductor properties according to claim 1, wherein the volume ratio of deionized water in step S3 to the organic solvent in step S2 is 1 (1-4).
6. The cobalt (II) complex having semiconductor properties according to claim 1, wherein the reaction time of the heating reaction in step S4 is 2 to 4 days.
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