CN114851275B - Cut film control method and device based on film sticking machine and storage medium - Google Patents
Cut film control method and device based on film sticking machine and storage medium Download PDFInfo
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- CN114851275B CN114851275B CN202210426010.6A CN202210426010A CN114851275B CN 114851275 B CN114851275 B CN 114851275B CN 202210426010 A CN202210426010 A CN 202210426010A CN 114851275 B CN114851275 B CN 114851275B
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- 238000000034 method Methods 0.000 title claims abstract description 49
- 238000005520 cutting process Methods 0.000 claims abstract description 269
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 248
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 248
- 239000010703 silicon Substances 0.000 claims abstract description 248
- 239000012528 membrane Substances 0.000 claims abstract description 131
- 238000010438 heat treatment Methods 0.000 claims description 10
- 230000001788 irregular Effects 0.000 claims description 10
- 238000004590 computer program Methods 0.000 claims description 4
- 238000004064 recycling Methods 0.000 claims description 4
- 235000012431 wafers Nutrition 0.000 abstract description 197
- 238000003475 lamination Methods 0.000 abstract description 7
- 230000006870 function Effects 0.000 description 10
- 238000004891 communication Methods 0.000 description 8
- 230000008569 process Effects 0.000 description 8
- 238000010586 diagram Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- 238000010030 laminating Methods 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 230000006978 adaptation Effects 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 238000011084 recovery Methods 0.000 description 2
- 230000001154 acute effect Effects 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- 238000012958 reprocessing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B26—HAND CUTTING TOOLS; CUTTING; SEVERING
- B26D—CUTTING; DETAILS COMMON TO MACHINES FOR PERFORATING, PUNCHING, CUTTING-OUT, STAMPING-OUT OR SEVERING
- B26D5/00—Arrangements for operating and controlling machines or devices for cutting, cutting-out, stamping-out, punching, perforating, or severing by means other than cutting
- B26D5/005—Computer numerical control means
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B26—HAND CUTTING TOOLS; CUTTING; SEVERING
- B26D—CUTTING; DETAILS COMMON TO MACHINES FOR PERFORATING, PUNCHING, CUTTING-OUT, STAMPING-OUT OR SEVERING
- B26D3/00—Cutting work characterised by the nature of the cut made; Apparatus therefor
- B26D3/10—Making cuts of other than simple rectilinear form
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C63/00—Lining or sheathing, i.e. applying preformed layers or sheathings of plastics; Apparatus therefor
- B29C63/0004—Component parts, details or accessories; Auxiliary operations
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C63/00—Lining or sheathing, i.e. applying preformed layers or sheathings of plastics; Apparatus therefor
- B29C63/0065—Heat treatment
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C63/00—Lining or sheathing, i.e. applying preformed layers or sheathings of plastics; Apparatus therefor
- B29C63/02—Lining or sheathing, i.e. applying preformed layers or sheathings of plastics; Apparatus therefor using sheet or web-like material
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Thermal Sciences (AREA)
- General Engineering & Computer Science (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
The embodiment of the application provides a cut membrane control method and device based on a laminator and a storage medium, wherein the method comprises the following steps: the surface shape of the silicon wafer to be coated can be determined first, a cutting path is generated based on the surface shape of the silicon wafer to be coated, and the membrane attached to the silicon wafer to be coated can be cut according to the cutting path. The shape of the silicon wafer to be laminated is identified, a path is planned, and the membrane laminated on the silicon wafer to be laminated is cut according to the planned path, so that the membrane with higher lamination integrity is obtained, and the membrane lamination requirements of the silicon wafers with different shapes are met.
Description
Technical Field
The application belongs to the technical field of product processing, and particularly relates to a cut membrane control method and device based on a membrane sticking machine and a storage medium.
Background
The film sticking machine is generally used for sticking a protective film and an anti-riot film to a workpiece in the industries of electronics/communication/semiconductors and the like so as to ensure that a film stuck on the workpiece is bubble-free and scratch-free.
Generally when the film is pasted on the silicon wafer, the shape of the silicon wafer is easy to change in the cutting process, and in order to meet different requirements and increase the mechanical strength of the surface of the cutting edge of the silicon wafer, the silicon wafer after being mostly cut is in an irregular pattern, so that the difficulty of the film pasting machine for pasting the film on the silicon wafer is intangibly increased, and the pasting integrity of the film cannot be guaranteed.
Disclosure of Invention
The embodiment of the application provides a cutting diaphragm control method and device based on a film sticking machine and a storage medium, and the technical scheme is as follows:
in a first aspect, an embodiment of the present application provides a method for controlling a cut film based on a film sticking machine, including:
determining the surface shape of a silicon wafer to be coated with a film;
generating a cutting path based on the surface shape of the silicon wafer to be coated;
and cutting the membrane attached to the silicon wafer to be laminated according to the cutting path.
In an alternative aspect of the first aspect, before the dicing path is used for dicing the film attached to the silicon wafer to be laminated, the method further includes:
placing the silicon wafer to be laminated at a preset position;
attaching a membrane to the surface of a silicon wafer to be attached with a membrane based on a preset position; the membrane is correspondingly arranged above the preset position, and the size of the membrane is larger than the surface size of the silicon wafer to be pasted with the membrane.
In yet another alternative of the first aspect, generating a dicing path based on a surface shape of the silicon wafer to be laminated includes:
when the surface shape of the silicon wafer to be coated is irregular, determining a plurality of characteristic points based on the surface shape of the silicon wafer to be coated; the shape formed by connecting lines among the characteristic points is consistent with the surface shape of the silicon wafer to be coated with the film;
Selecting a first key feature point and a second key feature point from the plurality of feature points, wherein the first key feature point and the second feature point form a first cutting path according to a preset first-direction connecting line, the first key feature point and the second feature point form a second cutting path according to a preset second-direction connecting line, and the first cutting path is inconsistent with the second cutting path; the first cutting path at least comprises two characteristic points in the plurality of characteristic points, and the second cutting path at least comprises three characteristic points in the plurality of characteristic points;
determining a first cutting angle according to the first cutting path and determining a second cutting angle according to the second cutting path; the first cutting angle and the second cutting angle are included angles between the cutting blade and the surface of the silicon wafer to be laminated.
In a further alternative of the first aspect, the cutting the film attached to the silicon wafer to be laminated according to the cutting path includes:
determining the position of a first key feature point corresponding to the surface of the silicon wafer to be coated;
controlling a cutting blade to cut the membrane attached to the silicon wafer to be attached according to a first cutting angle along a first cutting path based on the position of the first key feature point corresponding to the surface of the silicon wafer to be attached until the second key feature point is located at the position of the second key feature point corresponding to the surface of the silicon wafer to be attached;
And controlling the cutting blade to cut the membrane attached to the silicon wafer to be attached with the membrane along a second cutting path according to a second cutting angle based on the position of the second key feature point corresponding to the surface of the silicon wafer to be attached with the membrane until the membrane is located at the position of the first key feature point corresponding to the surface of the silicon wafer to be attached with the membrane again.
In yet another alternative of the first aspect, after attaching the membrane to the surface of the silicon wafer to be laminated based on the preset position, the method further includes:
and heating the membrane attached to the silicon wafer to be coated.
In yet another alternative of the first aspect, generating a dicing path based on a surface shape of the silicon wafer to be laminated includes:
when the surface shape of the silicon wafer to be coated is a regular shape, determining a template shape corresponding to the surface shape of the silicon wafer to be coated based on a template library; the template library comprises a plurality of template shapes and preset cutting paths corresponding to the template shapes respectively;
and determining a preset cutting path corresponding to the shape of the template.
In yet another alternative of the first aspect, the method further comprises:
and (3) recycling the cut membrane which is not attached to the silicon wafer to be attached with the membrane.
In a second aspect, an embodiment of the present application provides a dicing film control device based on a film sticking machine, the device includes:
The identification module is used for determining the surface shape of the silicon wafer to be coated with the film;
the generating module is used for generating a cutting path based on the surface shape of the silicon wafer to be coated;
and the cutting module is used for cutting the membrane attached to the silicon wafer to be laminated according to the cutting path.
In an alternative of the second aspect, the apparatus further comprises:
the placing module is used for placing the silicon wafer to be laminated at a preset position before cutting the membrane laminated on the silicon wafer to be laminated according to the cutting path;
the laminating module is used for laminating the membrane on the surface of the silicon wafer to be laminated on the basis of a preset position; the membrane is correspondingly arranged above the preset position, and the size of the membrane is larger than the surface size of the silicon wafer to be pasted with the membrane.
In yet another alternative of the second aspect, the generating module includes:
a first determining unit for determining a plurality of characteristic points based on the surface shape of the silicon wafer to be laminated when the surface shape of the silicon wafer to be laminated is an irregular shape; the shape formed by connecting lines among the characteristic points is consistent with the surface shape of the silicon wafer to be coated with the film;
the extraction unit is used for selecting a first key feature point and a second key feature point from the feature points, wherein the shape formed by the connection line of the first key feature point and the second feature point in the preset first direction is a first cutting path, the shape formed by the connection line of the first key feature point and the second feature point in the preset second direction is a second cutting path, and the first cutting path is inconsistent with the second cutting path; the first cutting path at least comprises two characteristic points in the plurality of characteristic points, and the second cutting path at least comprises three characteristic points in the plurality of characteristic points;
A second determining unit for determining a first cutting angle according to the first cutting path and a second cutting angle according to the second cutting path; the first cutting angle and the second cutting angle are included angles between the cutting blade and the surface of the silicon wafer to be laminated.
In yet another alternative of the second aspect, the cutting module comprises:
the third determining unit is used for determining the position of the first key feature point corresponding to the surface of the silicon wafer to be coated;
the first cutting unit is used for controlling the cutting blade to cut the membrane attached to the silicon wafer to be attached with the membrane along the first cutting path according to the first cutting angle based on the position of the first key feature point corresponding to the surface of the silicon wafer to be attached with the membrane until the second key feature point is located at the position of the second key feature point corresponding to the surface of the silicon wafer to be attached with the membrane;
and the second cutting unit is used for controlling the cutting blade to cut the membrane attached to the silicon wafer to be attached with the film according to a second cutting angle along a second cutting path based on the position of the second key characteristic point corresponding to the surface of the silicon wafer to be attached with the film until the second key characteristic point is located at the position of the first key characteristic point corresponding to the surface of the silicon wafer to be attached with the film again.
In yet another alternative of the second aspect, the apparatus further comprises:
And the heating module is used for performing heating treatment on the membrane attached to the silicon wafer to be attached to the film after attaching the membrane to the surface of the silicon wafer to be attached to the film based on the preset position.
In yet another alternative of the second aspect, the generating module further includes:
a fourth determining unit for determining a template shape corresponding to the surface shape of the silicon wafer to be laminated based on the template library when the surface shape of the silicon wafer to be laminated is a regular shape; the template library comprises a plurality of template shapes and preset cutting paths corresponding to the template shapes respectively;
and a fifth determining unit for determining a preset cutting path corresponding to the shape of the template.
In yet another alternative of the second aspect, the apparatus further comprises:
and the recovery module is used for recovering the cut membrane which is not attached to the silicon wafer to be attached with the membrane.
In a third aspect, embodiments of the present application provide a laminator, including a processor and a memory, wherein:
the processor is connected with the memory;
a memory for storing executable program code;
the processor executes a program corresponding to the executable program code by reading the executable program code stored in the memory, so as to implement the dicing film control method based on the film sticking machine provided in the first aspect or any implementation manner of the first aspect of the embodiment of the present application.
In a fourth aspect, an embodiment of the present application provides a computer storage medium, where a computer program is stored, where the computer program includes program instructions, where the program instructions, when executed by a processor, may implement the method for controlling a dicing diaphragm based on a laminator provided in the first aspect or any implementation manner of the first aspect of the present application.
In the embodiment of the application, when the control of cutting the membrane is performed based on the membrane sticking machine, the surface shape of the silicon wafer to be stuck with the membrane can be determined, a cutting path is generated based on the surface shape of the silicon wafer to be stuck with the membrane, and the membrane stuck to the silicon wafer to be stuck with the membrane can be cut according to the cutting path. The shape of the silicon wafer to be laminated is identified, a path is planned, and the membrane laminated on the silicon wafer to be laminated is cut according to the planned path, so that the membrane with higher lamination integrity is obtained, and the membrane lamination requirements of the silicon wafers with different shapes are met.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are required to be used in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic flow chart of a method for controlling a cutting film based on a film sticking machine according to an embodiment of the present application;
fig. 2 is an effect schematic diagram of a cutting path according to an embodiment of the present application;
fig. 3 is a schematic view illustrating the effect of a cutting angle according to an embodiment of the present disclosure;
fig. 4 is a schematic structural diagram of a cutting film control device based on a film sticking machine according to an embodiment of the present application;
fig. 5 is a schematic structural diagram of a film sticking machine according to an embodiment of the present application.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application.
In the following description, the terms "first," "second," and "first," are used for descriptive purposes only and are not to be construed as indicating or implying relative importance. The following description provides various embodiments of the present application, and various embodiments may be substituted or combined, so that the present application is also intended to encompass all possible combinations of the same and/or different embodiments described. Thus, if one embodiment includes feature A, B, C and another embodiment includes feature B, D, then the present application should also be considered to include embodiments that include one or more of all other possible combinations including A, B, C, D, although such an embodiment may not be explicitly recited in the following.
The following description provides examples and does not limit the scope, applicability, or examples set forth in the claims. Changes may be made in the function and arrangement of elements described without departing from the scope of the application. Various examples may omit, replace, or add various procedures or components as appropriate. For example, the described methods may be performed in a different order than described, and various steps may be added, omitted, or combined. Furthermore, features described with respect to some examples may be combined into other examples.
Referring to fig. 1, fig. 1 shows a flow chart of a method for controlling a cut film based on a film sticking machine according to an embodiment of the present application.
As shown in fig. 1, the method for controlling the cut film based on the film sticking machine at least comprises the following steps:
and 102, determining the surface shape of the silicon wafer to be coated.
The embodiment of the control method for cutting the film may be, but not limited to, a laminator, or other machine that may be used to perform film lamination on the surface of the workpiece, and for better understanding, one or more of the following embodiments uses the laminator as the embodiment of the present disclosure.
Specifically, the film sticking machine can determine the surface shape of the silicon wafer to be stuck with the film firstly in the process of sticking the film on the surface of the silicon wafer to be stuck with the film. The surface shape of the silicon wafer to be laminated can be divided into a regular shape and an irregular shape, common regular shapes can be but are not limited to including a circle, an ellipse, a trapezoid, a rectangle and the like, a laminator can be matched with the surface shape of the silicon wafer to be laminated through a prestored regular shape template, and whether the surface of the silicon wafer to be laminated is the regular shape or not is determined according to a matching result. It can be understood that, since the surface size of the silicon wafer to be laminated can be set by the user, whether the surface of the silicon wafer to be laminated is in a regular shape can be determined by judging whether the size of the prestored regular-shape template is proportional to the size of the surface of the silicon wafer to be laminated, for example, when the preset regular-shape template is in a round shape, whether the surface of the silicon wafer to be laminated is in a regular shape can be determined according to whether the radius of the round template is proportional to the radius of the surface of the silicon wafer to be laminated; or when the preset regular-shape template is rectangular, whether the surface of the silicon wafer to be laminated is in a regular shape can be determined according to whether the length and the width of the rectangular template are proportional to the length and the width of the surface shape of the silicon wafer to be laminated.
It is understood that the manner in which the laminator determines the surface shape of the silicon wafer to be laminated may be, but is not limited to, laser scanning, for example, the laminator may fix the silicon wafer to be laminated at a specified position, emit a laser signal to the surface of the silicon wafer to be laminated by controlling a laser sensor disposed above the specified position, and determine the surface shape of the silicon wafer to be laminated by the emission of the laser signal. It can be understood that when the laser signal is emitted to the surface of the silicon wafer to be coated, the emission can be generated, so that the data collected by the laser sensor can be changed, and the surface shape of the silicon wafer to be coated can be analyzed according to the changed data.
And 104, generating a cutting path based on the surface shape of the silicon wafer to be coated.
Specifically, after the surface shape of the silicon wafer to be laminated is determined, the laminator can generate a cutting path according to the surface shape of the silicon wafer to be laminated. The cutting path is understood as a track formed around the surface edge of the silicon wafer to be laminated, and the track can correspond to a preset cutting direction and a cutting angle of a blade for cutting the film laminated on the surface of the silicon wafer to be laminated.
As a way of generating a dicing path according to an embodiment of the present application, generating a dicing path based on a surface shape of a silicon wafer to be laminated includes:
when the surface shape of the silicon wafer to be coated is irregular, determining a plurality of characteristic points based on the surface shape of the silicon wafer to be coated; the shape formed by connecting lines among the characteristic points is consistent with the surface shape of the silicon wafer to be coated with the film;
selecting a first key feature point and a second key feature point from the plurality of feature points, wherein the first key feature point and the second feature point form a first cutting path according to a preset first-direction connecting line, the first key feature point and the second feature point form a second cutting path according to a preset second-direction connecting line, and the first cutting path is inconsistent with the second cutting path; the first cutting path at least comprises two characteristic points in the plurality of characteristic points, and the second cutting path at least comprises three characteristic points in the plurality of characteristic points;
determining a first cutting angle according to the first cutting path and determining a second cutting angle according to the second cutting path; the first cutting angle and the second cutting angle are included angles between the cutting blade and the surface of the silicon wafer to be laminated.
Specifically, when the film sticking machine determines that the surface shape of the silicon wafer to be stuck with the film is an irregular shape, a plurality of characteristic points can be determined according to the surface shape of the silicon wafer to be stuck with the film, and the characteristic points can be arranged on a track formed around the surface edge of the silicon wafer to be stuck with the film. It is understood that the manner of determining the plurality of feature points may be, but is not limited to, inputting the track corresponding to the surface shape of the silicon wafer to be laminated into a trained image processing model to obtain the track marked with the plurality of feature points.
Further, after a plurality of feature points are determined according to the surface shape of the silicon wafer to be laminated, a plurality of key feature points can be selected from the plurality of feature points. It is understood that the irregularly shaped track may include track segments of different types, such as, but not limited to, curved track segments, straight track segments, and the like. Of course, the track segments may also be divided by regular shapes, such as, but not limited to, semicircular track segments, semi-elliptical track segments, or straight track segments, etc. Based on this, the intersection between the different types of trajectory line segments can be regarded as a plurality of key feature points among the plurality of feature points.
Reference is now made to fig. 2, which is a schematic diagram illustrating the effect of a cutting path according to an embodiment of the present application. As shown in fig. 2, the cutting path may be understood to include a curved track segment and a linear track segment, where one intersection point of the curved track segment and the linear track segment may be used as a first key feature point, and another intersection point of the curved track segment and the linear track segment may be used as a second key feature point. The straight line segment connecting the first key feature point and the second key feature point along the clockwise direction can be used as a first cutting path, and the curve segment connecting the first key feature point and the second key feature point along the anticlockwise direction can be used as a second cutting path. It should be understood that, in the embodiment of the present application, the first cutting path may include, but is not limited to, only the first key feature point and the second key feature point, in other words, the first cutting path may further include other feature points among the above-mentioned plurality of feature points, and the second cutting path may include, but is not limited to, the first key feature point, the second key feature point, and at least one other feature point, and it should be noted that the number of feature points of the second cutting path is greater than the number of feature points of the first cutting path, so as to distinguish the trace line segment types corresponding to each of the first cutting path and the second cutting path.
Note that the number of the key feature points mentioned above may not be limited to the embodiment of the present application, and for example, the third key feature point, the fourth key feature point, and the like may also be included, which is not limited thereto.
Further, after determining the first cutting path and the second cutting path, the laminator may further determine a first cutting angle according to the first cutting path and determine a second cutting angle according to the second cutting path. Taking the first cutting path and the second cutting path shown in fig. 2 as examples, the first cutting path is a curve track segment, a first cutting angle for cutting the curve track segment can be set, and the blade is controlled to cut the film attached to the surface of the silicon wafer to be laminated according to the first cutting angle; and the second cutting path is a linear track line segment, a second cutting angle for cutting the linear track line segment can be set, and the blade is controlled to cut the membrane attached to the surface of the silicon wafer to be laminated according to the second cutting angle.
For a better understanding, reference is also made here to the schematic view of the effect of a cutting angle shown in fig. 3. As shown in fig. 3, 3a shows a first cutting angle corresponding to the first cutting path mentioned above, which may be understood as the angle between the axial direction of the blade and the plane of the surface of the silicon wafer to be coated, for example, in 3a, the first cutting angle may be a right angle. 3b shows a second cutting angle corresponding to the above-mentioned second cutting path, which may be understood as the angle between the axial direction of the blade and the plane of the surface of the silicon wafer to be coated, which may correspond to an acute angle in 3b, for example. It can be appreciated that different cutting angles may affect the smoothness of cutting by the blade according to the cutting shape, in this embodiment, the smoothness of cutting by the blade according to the first cutting angle along the track corresponding to the first cutting path is the highest, and the smoothness of cutting by the blade according to the second cutting angle along the track corresponding to the second cutting path is the highest, which may not be limited thereto.
It should be further noted that, the cutting paths generated in the embodiments of the present application may include a first cutting path, a first cutting angle corresponding to the first cutting path, a second cutting path, and a second cutting angle corresponding to the second cutting path, but in actual process, the number of sub-cutting paths such as the first cutting path and the second cutting path is not limited to the number of sub-cutting paths, and is not limited to the two cutting angles mentioned above.
And 106, cutting the membrane attached to the silicon wafer to be laminated according to the cutting path.
Specifically, after a cutting path is generated by the film sticking machine, the film attached to the silicon wafer to be stuck with the film can be cut according to the cutting path, so that the flatness of the cut film attached to the surface of the silicon wafer to be stuck with the film is the highest.
The dicing paths mentioned above may include a first dicing path, a first dicing angle corresponding to the first dicing path, a second dicing path, and a second dicing angle corresponding to the second dicing path, for example, the laminator may determine the position of the first key feature point corresponding to the surface of the silicon wafer to be laminated first, and take the position as a dicing start position of the dicing blade, and control the dicing blade to dice the film attached to the silicon wafer to be laminated according to the first dicing angle and along the first dicing path until the second key feature point is located at the position corresponding to the surface of the silicon wafer to be laminated. It is understood that the angle between the blade and the plane of the membrane of the silicon wafer to be laminated remains unchanged during the dicing process.
And then the film sticking machine can take the position of the second key characteristic point corresponding to the surface of the silicon wafer to be stuck with the film as the initial position, and control the cutting blade to continuously cut the film stuck to the silicon wafer to be stuck with the film according to the second cutting angle and along the second cutting path until the film is positioned at the position of the first key characteristic point corresponding to the surface of the silicon wafer to be stuck with the film again.
In the embodiment of the application, the shape of the silicon wafer to be laminated can be identified and the path can be planned, and the membrane laminated on the silicon wafer to be laminated is cut according to the planned path, so that the membrane with higher lamination integrity can be obtained, and the membrane lamination requirements of the silicon wafers with different shapes can be met.
As an alternative of the embodiment of the present application, before cutting the membrane attached to the silicon wafer to be laminated according to the cutting path, the method further includes:
placing the silicon wafer to be laminated at a preset position;
attaching a membrane to the surface of a silicon wafer to be attached with a membrane based on a preset position; wherein the membrane is correspondingly arranged above the preset position, and the size of the membrane is larger than the surface size of the silicon wafer to be pasted with the membrane
Specifically, before cutting the film attached to the silicon wafer to be attached, the film attaching machine can place the silicon wafer to be attached at a preset position for attaching the film, and a machine for attaching the film can be arranged above the preset position or at other positions, so that the film can be attached on the surface of the silicon wafer to be attached quickly. It can be appreciated that in the process of film pasting, it is necessary to ensure that the film attached to the silicon wafer to be film-pasted completely covers the surface of the silicon wafer to be film-pasted so as to avoid causing the incompleteness of film pasting. Preferably, in the embodiment of the present application, the membrane attached to the surface of the silicon wafer to be attached is a regular pattern, and the minimum size of the regular pattern may be greater than the maximum size of the silicon wafer to be attached, for example, when the silicon wafer to be attached is a regular circle, and the membrane attached to the surface of the silicon wafer to be attached is a regular rectangle, the width of the membrane attached to the surface of the silicon wafer to be attached is greater than or equal to the diameter of the silicon wafer to be attached.
As still another alternative of the embodiment of the present application, after attaching the membrane to the surface of the silicon wafer to be laminated based on the preset position, the method further includes:
and heating the membrane attached to the silicon wafer to be coated.
Specifically, in order to avoid air bubbles between the membrane attached to the surface of the silicon wafer to be attached and the silicon wafer to be attached, the overall effect of the attached film is further affected, and after the membrane is attached to the surface of the silicon wafer to be attached, the membrane attached to the silicon wafer to be attached can be subjected to heating treatment so as to remove the air bubbles between the membrane and the silicon wafer to be attached. It can be appreciated that in the embodiment of the present application, the film may be further heat-treated in the process of attaching the film to the surface of the silicon wafer to be attached, so as to avoid air bubbles generated in the attaching process of the film.
As yet another alternative of the embodiment of the present application, generating a dicing path based on a surface shape of a silicon wafer to be laminated includes:
when the surface shape of the silicon wafer to be coated is a regular shape, determining a template shape corresponding to the surface shape of the silicon wafer to be coated based on a template library; the template library comprises a plurality of template shapes and preset cutting paths corresponding to the template shapes respectively;
And determining a preset cutting path corresponding to the shape of the template.
Specifically, when the laminator determines that the surface shape of the silicon wafer to be laminated is a regular shape, a plurality of preset template shapes in the template library can be directly matched with the surface shape of the silicon wafer to be laminated, and a preset cutting path corresponding to the template shape which is successfully matched is used as the cutting path of the silicon wafer to be laminated.
As yet another alternative of the embodiment of the present application, further includes:
and (3) recycling the cut membrane which is not attached to the silicon wafer to be attached with the membrane.
Specifically, after the film sticking machine finishes cutting the film, the cut film which is not attached to the silicon wafer to be stuck with the film can be uniformly recovered, and the film with the regular shape can be obtained through reprocessing, so that film sticking treatment can be carried out on other workpieces again.
Referring to fig. 4, fig. 4 is a schematic structural diagram of a dicing film control device based on a film sticking machine according to an embodiment of the application.
As shown in fig. 4, the dicing film control device based on the laminator at least includes an identification module 401, a generation module 402, and a dicing module 403, wherein:
the identification module 401 is used for determining the surface shape of the silicon wafer to be coated;
a generating module 402, configured to generate a cutting path based on a surface shape of the silicon wafer to be coated;
and the cutting module 403 is used for cutting the membrane attached to the silicon wafer to be laminated according to the cutting path.
In some possible embodiments, the apparatus further comprises:
the placing module is used for placing the silicon wafer to be laminated at a preset position before cutting the membrane laminated on the silicon wafer to be laminated according to the cutting path;
the laminating module is used for laminating the membrane on the surface of the silicon wafer to be laminated on the basis of a preset position; the membrane is correspondingly arranged above the preset position, and the size of the membrane is larger than the surface size of the silicon wafer to be pasted with the membrane.
In some possible embodiments, the generating module comprises:
a first determining unit for determining a plurality of characteristic points based on the surface shape of the silicon wafer to be laminated when the surface shape of the silicon wafer to be laminated is an irregular shape; the shape formed by connecting lines among the characteristic points is consistent with the surface shape of the silicon wafer to be coated with the film;
The extraction unit is used for selecting a first key feature point and a second key feature point from the feature points, wherein the shape formed by the connection line of the first key feature point and the second feature point in the preset first direction is a first cutting path, the shape formed by the connection line of the first key feature point and the second feature point in the preset second direction is a second cutting path, and the first cutting path is inconsistent with the second cutting path; the first cutting path at least comprises two characteristic points in the plurality of characteristic points, and the second cutting path at least comprises three characteristic points in the plurality of characteristic points;
a second determining unit for determining a first cutting angle according to the first cutting path and a second cutting angle according to the second cutting path; the first cutting angle and the second cutting angle are included angles between the cutting blade and the surface of the silicon wafer to be laminated.
In some possible embodiments, the cutting module comprises:
the third determining unit is used for determining the position of the first key feature point corresponding to the surface of the silicon wafer to be coated;
the first cutting unit is used for controlling the cutting blade to cut the membrane attached to the silicon wafer to be attached with the membrane along the first cutting path according to the first cutting angle based on the position of the first key feature point corresponding to the surface of the silicon wafer to be attached with the membrane until the second key feature point is located at the position of the second key feature point corresponding to the surface of the silicon wafer to be attached with the membrane;
And the second cutting unit is used for controlling the cutting blade to cut the membrane attached to the silicon wafer to be attached with the film according to a second cutting angle along a second cutting path based on the position of the second key characteristic point corresponding to the surface of the silicon wafer to be attached with the film until the second key characteristic point is located at the position of the first key characteristic point corresponding to the surface of the silicon wafer to be attached with the film again.
In some possible embodiments, the apparatus further comprises:
and the heating module is used for performing heating treatment on the membrane attached to the silicon wafer to be attached to the film after attaching the membrane to the surface of the silicon wafer to be attached to the film based on the preset position.
In some possible embodiments, the generating module further comprises:
a fourth determining unit for determining a template shape corresponding to the surface shape of the silicon wafer to be laminated based on the template library when the surface shape of the silicon wafer to be laminated is a regular shape; the template library comprises a plurality of template shapes and preset cutting paths corresponding to the template shapes respectively;
and a fifth determining unit for determining a preset cutting path corresponding to the shape of the template.
In some possible embodiments, the apparatus further comprises:
and the recovery module is used for recovering the cut membrane which is not attached to the silicon wafer to be attached with the membrane.
It will be apparent to those skilled in the art that the embodiments of the present application may be implemented in software and/or hardware. "Unit" and "module" in this specification refer to software and/or hardware capable of performing a specific function, either alone or in combination with other components, such as Field programmable gate arrays (Field-Programmable Gate Array, FPGAs), integrated circuits (Integrated Circuit, ICs), etc.
The processing units and/or modules of the embodiments of the present application may be implemented by an analog circuit that implements the functions described in the embodiments of the present application, or may be implemented by software that executes the functions described in the embodiments of the present application.
Referring to fig. 5, fig. 5 shows a schematic structural diagram of a film sticking machine according to an embodiment of the present application.
As shown in fig. 5, the laminator may include: at least one processor 501, at least one network interface 504, a user interface 503, a memory 505, and at least one communication bus 502.
Wherein the communication bus 502 may be used to enable connectivity communication of the various components described above.
The user interface 503 may include keys, and the optional user interface may also include a standard wired interface, a wireless interface, among others.
The network interface 504 may include, but is not limited to, a bluetooth module, an NFC module, a Wi-Fi module, and the like.
Wherein the processor 501 may include one or more processing cores. The processor 501 utilizes various interfaces and lines to connect various portions of the overall electronic device 500, perform various functions of the routing device 500 and process data by executing or executing instructions, programs, code sets, or instruction sets stored in the memory 505, and invoking data stored in the memory 505. Alternatively, the processor 501 may be implemented in at least one hardware form of DSP, FPGA, PLA. The processor 501 may integrate one or a combination of several of a CPU, GPU, modem, etc. The CPU mainly processes an operating system, a user interface, an application program and the like; the GPU is used for rendering and drawing the content required to be displayed by the display screen; the modem is used to handle wireless communications. It will be appreciated that the modem may not be integrated into the processor 501 and may be implemented by a single chip.
The memory 505 may include RAM or ROM. Optionally, the memory 505 comprises a non-transitory computer readable medium. Memory 505 may be used to store instructions, programs, code sets, or instruction sets. The memory 505 may include a stored program area and a stored data area, wherein the stored program area may store instructions for implementing an operating system, instructions for at least one function (such as a touch function, a sound playing function, an image playing function, etc.), instructions for implementing the above-described various method embodiments, etc.; the storage data area may store data or the like referred to in the above respective method embodiments. The memory 505 may also optionally be at least one storage device located remotely from the processor 501. As shown in fig. 5, an operating system, a network communication module, a user interface module, and a dicing film control application program based on a laminator may be included in the memory 505 as a kind of computer storage medium.
In particular, the processor 501 may be configured to invoke the laminator-based dicing film control application stored in the memory 505 and to specifically perform the following operations:
determining the surface shape of a silicon wafer to be coated with a film;
generating a cutting path based on the surface shape of the silicon wafer to be coated;
and cutting the membrane attached to the silicon wafer to be laminated according to the cutting path.
In some possible embodiments, before dicing the film attached to the silicon wafer to be laminated according to the dicing path, the processor 501 is further configured to perform:
placing the silicon wafer to be laminated at a preset position;
attaching a membrane to the surface of a silicon wafer to be attached with a membrane based on a preset position; the membrane is correspondingly arranged above the preset position, and the size of the membrane is larger than the surface size of the silicon wafer to be pasted with the membrane.
In some possible embodiments, the processor 501 generates a dicing path based on the surface shape of the silicon wafer to be filmed for performing:
when the surface shape of the silicon wafer to be coated is irregular, determining a plurality of characteristic points based on the surface shape of the silicon wafer to be coated; the shape formed by connecting lines among the characteristic points is consistent with the surface shape of the silicon wafer to be coated with the film;
selecting a first key feature point and a second key feature point from the plurality of feature points, wherein the first key feature point and the second feature point form a first cutting path according to a preset first-direction connecting line, the first key feature point and the second feature point form a second cutting path according to a preset second-direction connecting line, and the first cutting path is inconsistent with the second cutting path; the first cutting path at least comprises two characteristic points in the plurality of characteristic points, and the second cutting path at least comprises three characteristic points in the plurality of characteristic points;
Determining a first cutting angle according to the first cutting path and determining a second cutting angle according to the second cutting path; the first cutting angle and the second cutting angle are included angles between the cutting blade and the surface of the silicon wafer to be laminated.
In some possible embodiments, the processor 501 cuts the film attached to the silicon wafer to be laminated according to the cutting path, for performing:
determining the position of a first key feature point corresponding to the surface of the silicon wafer to be coated;
controlling a cutting blade to cut the membrane attached to the silicon wafer to be attached according to a first cutting angle along a first cutting path based on the position of the first key feature point corresponding to the surface of the silicon wafer to be attached until the second key feature point is located at the position of the second key feature point corresponding to the surface of the silicon wafer to be attached;
and controlling the cutting blade to cut the membrane attached to the silicon wafer to be attached with the membrane along a second cutting path according to a second cutting angle based on the position of the second key feature point corresponding to the surface of the silicon wafer to be attached with the membrane until the membrane is located at the position of the first key feature point corresponding to the surface of the silicon wafer to be attached with the membrane again.
In some possible embodiments, after the processor 501 attaches the membrane to the surface of the silicon wafer to be laminated based on the preset position, the method is further used to perform:
And heating the membrane attached to the silicon wafer to be coated.
In some possible embodiments, the processor 501 generates a dicing path based on the surface shape of the silicon wafer to be filmed for performing:
when the surface shape of the silicon wafer to be coated is a regular shape, determining a template shape corresponding to the surface shape of the silicon wafer to be coated based on a template library; the template library comprises a plurality of template shapes and preset cutting paths corresponding to the template shapes respectively;
and determining a preset cutting path corresponding to the shape of the template.
In some possible embodiments, the processor 501 is further configured to perform:
and (3) recycling the cut membrane which is not attached to the silicon wafer to be attached with the membrane.
The present application also provides a computer readable storage medium having stored thereon a computer program which when executed by a processor performs the steps of the above method. The computer readable storage medium may include, among other things, any type of disk including floppy disks, optical disks, DVDs, CD-ROMs, micro-drives, and magneto-optical disks, ROM, RAM, EPROM, EEPROM, DRAM, VRAM, flash memory devices, magnetic or optical cards, nanosystems (including molecular memory ICs), or any type of media or device suitable for storing instructions and/or data.
It should be noted that, for simplicity of description, the foregoing method embodiments are all expressed as a series of action combinations, but it should be understood by those skilled in the art that the present application is not limited by the order of actions described, as some steps may be performed in other order or simultaneously in accordance with the present application. Further, those skilled in the art will also appreciate that the embodiments described in the specification are all preferred embodiments, and that the acts and modules referred to are not necessarily required in the present application.
In the foregoing embodiments, the descriptions of the embodiments are emphasized, and for parts of one embodiment that are not described in detail, reference may be made to related descriptions of other embodiments.
In the several embodiments provided in this application, it should be understood that the disclosed apparatus may be implemented in other ways. For example, the apparatus embodiments described above are merely illustrative, such as the division of the units, merely a logical function division, and there may be additional manners of dividing the actual implementation, such as multiple units or components may be combined or integrated into another system, or some features may be omitted, or not performed. Alternatively, the coupling or direct coupling or communication connection shown or discussed with each other may be through some service interface, device or unit indirect coupling or communication connection, electrical or otherwise.
The units described as separate units may or may not be physically separate, and units shown as units may or may not be physical units, may be located in one place, or may be distributed on a plurality of network units. Some or all of the units may be selected according to actual needs to achieve the purpose of the solution of this embodiment.
In addition, each functional unit in each embodiment of the present application may be integrated in one processing unit, or each unit may exist alone physically, or two or more units may be integrated in one unit. The integrated units may be implemented in hardware or in software functional units.
The integrated units, if implemented in the form of software functional units and sold or used as stand-alone products, may be stored in a computer readable memory. Based on such understanding, the technical solution of the present application may be embodied in essence or a part contributing to the prior art or all or part of the technical solution in the form of a software product stored in a memory, including several instructions for causing a computer device (which may be a personal computer, a server or a network device, etc.) to perform all or part of the steps of the method described in the embodiments of the present application. And the aforementioned memory includes: a U-disk, a Read-Only Memory (ROM), a random access Memory (Random Access Memory, RAM), a removable hard disk, a magnetic disk, or an optical disk, or other various media capable of storing program codes.
Those of ordinary skill in the art will appreciate that all or a portion of the steps in the various methods of the above embodiments may be performed by hardware associated with a program that is stored in a computer readable memory, which may include: flash disk, read-Only Memory (ROM), random-access Memory (Random Access Memory, RAM), magnetic or optical disk, and the like.
The foregoing is merely exemplary embodiments of the present disclosure and is not intended to limit the scope of the present disclosure. That is, equivalent changes and modifications are contemplated by the teachings of this disclosure, which fall within the scope of the present disclosure. Embodiments of the present disclosure will be readily apparent to those skilled in the art from consideration of the specification and practice of the disclosure herein. This application is intended to cover any adaptations, uses, or adaptations of the disclosure following, in general, the principles of the disclosure and including such departures from the present disclosure as come within known or customary practice within the art to which the disclosure pertains. It is intended that the specification and examples be considered as exemplary only, with a scope and spirit of the disclosure being indicated by the claims.
Claims (5)
1. A method for controlling a cut film based on a film sticking machine, the method comprising:
Determining the surface shape of a silicon wafer to be coated with a film;
generating a cutting path based on the surface shape of the silicon wafer to be coated;
cutting the membrane attached to the silicon wafer to be laminated according to the cutting path;
the generating a cutting path based on the surface shape of the silicon wafer to be laminated comprises the following steps:
when the surface shape of the silicon wafer to be coated is irregular, determining a plurality of characteristic points based on the surface shape of the silicon wafer to be coated; the shape formed by connecting lines among the characteristic points is consistent with the surface shape of the silicon wafer to be coated;
selecting a first key feature point and a second key feature point from the feature points, wherein a shape formed by connecting the first key feature point and the second key feature point according to a preset first direction is a first cutting path, a shape formed by connecting the first key feature point and the second key feature point according to a preset second direction is a second cutting path, and the first cutting path is inconsistent with the second cutting path; wherein the first cutting path includes at least two of the plurality of feature points, and the second cutting path includes at least three of the plurality of feature points;
Determining a first cutting angle according to the first cutting path and determining a second cutting angle according to the second cutting path; the first cutting angle and the second cutting angle are included angles between the cutting blade and the surface of the silicon wafer to be laminated;
before the membrane attached to the silicon wafer to be attached with the membrane is cut according to the cutting path, the method further comprises the following steps:
placing the silicon wafer to be laminated at a preset position;
attaching the membrane to the surface of the silicon wafer to be attached with the membrane based on the preset position; the membrane is correspondingly arranged above the preset position, and the size of the membrane is larger than the surface size of the silicon wafer to be laminated;
the method for cutting the membrane attached to the silicon wafer to be attached with the membrane comprises the following steps of:
determining the position of the first key feature point corresponding to the surface of the silicon wafer to be subjected to film pasting;
controlling the cutting blade to cut the membrane attached to the silicon wafer to be attached according to the first cutting angle along the first cutting path based on the position of the first key feature point corresponding to the surface of the silicon wafer to be attached until the second key feature point is located at the position of the second key feature point corresponding to the surface of the silicon wafer to be attached;
Controlling the cutting blade to cut the membrane attached to the silicon wafer to be attached according to the second cutting angle along the second cutting path based on the position of the second key feature point corresponding to the surface of the silicon wafer to be attached until the membrane is located at the position of the first key feature point corresponding to the surface of the silicon wafer to be attached again;
wherein, based on the preset position, the film is attached to the surface of the silicon wafer to be attached with the film, and the method further comprises the following steps:
heating the membrane attached to the silicon wafer to be attached with the membrane;
the method for generating the cutting path based on the surface shape of the silicon wafer to be coated comprises the following steps:
when the surface shape of the silicon wafer to be coated is a regular shape, determining a template shape corresponding to the surface shape of the silicon wafer to be coated based on a template library; the template library comprises a plurality of template shapes and preset cutting paths corresponding to the template shapes respectively;
and determining a preset cutting path corresponding to the shape of the template.
2. The method according to claim 1, wherein the method further comprises:
and recycling the cut membrane which is not attached to the silicon wafer to be attached with the membrane.
3. A cut film control device based on a laminator, the device comprising:
the identification module is used for determining the surface shape of the silicon wafer to be coated with the film;
the generating module is used for generating a cutting path based on the surface shape of the silicon wafer to be coated;
the cutting module is used for cutting the membrane attached to the silicon wafer to be laminated according to the cutting path;
the generating a cutting path based on the surface shape of the silicon wafer to be laminated comprises the following steps:
when the surface shape of the silicon wafer to be coated is irregular, determining a plurality of characteristic points based on the surface shape of the silicon wafer to be coated; the shape formed by connecting lines among the characteristic points is consistent with the surface shape of the silicon wafer to be coated;
selecting a first key feature point and a second key feature point from the feature points, wherein a shape formed by connecting the first key feature point and the second key feature point according to a preset first direction is a first cutting path, a shape formed by connecting the first key feature point and the second key feature point according to a preset second direction is a second cutting path, and the first cutting path is inconsistent with the second cutting path; wherein the first cutting path includes at least two of the plurality of feature points, and the second cutting path includes at least three of the plurality of feature points;
Determining a first cutting angle according to the first cutting path and determining a second cutting angle according to the second cutting path; the first cutting angle and the second cutting angle are included angles between the cutting blade and the surface of the silicon wafer to be laminated;
before the membrane attached to the silicon wafer to be attached with the membrane is cut according to the cutting path, the method further comprises the following steps:
placing the silicon wafer to be laminated at a preset position;
attaching the membrane to the surface of the silicon wafer to be attached with the membrane based on the preset position; the membrane is correspondingly arranged above the preset position, and the size of the membrane is larger than the surface size of the silicon wafer to be laminated;
the method for cutting the membrane attached to the silicon wafer to be attached with the membrane comprises the following steps of:
determining the position of the first key feature point corresponding to the surface of the silicon wafer to be subjected to film pasting;
controlling the cutting blade to cut the membrane attached to the silicon wafer to be attached according to the first cutting angle along the first cutting path based on the position of the first key feature point corresponding to the surface of the silicon wafer to be attached until the second key feature point is located at the position of the second key feature point corresponding to the surface of the silicon wafer to be attached;
Controlling the cutting blade to cut the membrane attached to the silicon wafer to be attached according to the second cutting angle along the second cutting path based on the position of the second key feature point corresponding to the surface of the silicon wafer to be attached until the membrane is located at the position of the first key feature point corresponding to the surface of the silicon wafer to be attached again;
wherein, based on the preset position, the film is attached to the surface of the silicon wafer to be attached with the film, and the method further comprises the following steps:
heating the membrane attached to the silicon wafer to be attached with the membrane;
the method for generating the cutting path based on the surface shape of the silicon wafer to be coated comprises the following steps:
when the surface shape of the silicon wafer to be coated is a regular shape, determining a template shape corresponding to the surface shape of the silicon wafer to be coated based on a template library; the template library comprises a plurality of template shapes and preset cutting paths corresponding to the template shapes respectively;
and determining a preset cutting path corresponding to the shape of the template.
4. The utility model provides a film sticking machine, includes treater and memory, its characterized in that:
the processor is connected with the memory;
the memory is used for storing executable program codes;
The processor runs a program corresponding to executable program code stored in the memory by reading the executable program code for performing the steps of the method according to any of claims 1-2.
5. A computer readable storage medium having stored thereon a computer program, characterized in that the computer readable storage medium has stored therein instructions which, when run on a computer or a processor, cause the computer or the processor to perform the steps of the method according to any of claims 1-2.
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| CN202210426010.6A CN114851275B (en) | 2022-04-22 | 2022-04-22 | Cut film control method and device based on film sticking machine and storage medium |
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| CN114851275A (en) | 2022-08-05 |
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