CN114843364B - Beta-gallium oxide/4H-silicon carbide heterojunction ultra-high temperature ultraviolet detector and preparation method thereof - Google Patents
Beta-gallium oxide/4H-silicon carbide heterojunction ultra-high temperature ultraviolet detector and preparation method thereof Download PDFInfo
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- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 56
- 229910001195 gallium oxide Inorganic materials 0.000 title claims abstract description 14
- 238000002360 preparation method Methods 0.000 title claims abstract description 13
- 229910052751 metal Inorganic materials 0.000 claims abstract description 160
- 239000002184 metal Substances 0.000 claims abstract description 160
- 239000010410 layer Substances 0.000 claims abstract description 140
- 239000002346 layers by function Substances 0.000 claims abstract description 32
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 claims abstract description 27
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 238000001259 photo etching Methods 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 12
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 12
- 229910052757 nitrogen Inorganic materials 0.000 claims description 8
- 150000002500 ions Chemical class 0.000 claims description 4
- -1 nitrogen ions Chemical class 0.000 claims description 4
- 238000000137 annealing Methods 0.000 claims description 3
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 claims description 3
- 238000001514 detection method Methods 0.000 abstract description 9
- 239000000463 material Substances 0.000 description 5
- 239000007789 gas Substances 0.000 description 3
- 238000012544 monitoring process Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 238000000825 ultraviolet detection Methods 0.000 description 2
- VVTSZOCINPYFDP-UHFFFAOYSA-N [O].[Ar] Chemical compound [O].[Ar] VVTSZOCINPYFDP-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007123 defense Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
- H01L31/108—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the Schottky type
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- H01L31/0224—Electrodes
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- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
- H01L31/022491—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of a thin transparent metal layer, e.g. gold
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- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0328—Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 - H01L31/032
- H01L31/0336—Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 - H01L31/032 in different semiconductor regions, e.g. Cu2X/CdX hetero-junctions, X being an element of Group VI of the Periodic System
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Abstract
The invention discloses a beta-gallium oxide/4H-silicon carbide heterojunction ultra-high temperature ultraviolet detector and a preparation method thereof, wherein the detector comprises: an N+ type 4H-SiC substrate, an N-type 4H-SiC epitaxial layer and beta-Ga which are sequentially arranged from bottom to top 2 O 3 Functional layer. The beta-Ga 2 O 3 The functional layer is provided with a first metal electrode layer and a second metal electrode layer, and the first metal electrode layer and the second metal electrode layer are respectively provided with a third metal electrode layer; the first metal electrode layer forms ohmic contact with a third metal electrode layer on the first metal electrode layer, and the second metal electrode layer forms Schottky contact with the third metal electrode layer on the second metal electrode layer. The ultraviolet photoelectric detector passes through beta-Ga 2 O 3 The 4H-SiC heterojunction structure can realize a high-temperature detection function and has higher responsivity. Meanwhile, the first metal electrode, the second metal electrode and the third metal electrode greatly improve the light utilization rate and greatly increase the detection performance of the detector.
Description
Technical Field
The invention belongs to the technical field of ultraviolet detection devices, and particularly relates to a beta-gallium oxide/4H-silicon carbide heterojunction ultra-high temperature ultraviolet detector and a preparation method thereof.
Background
The ultraviolet detector is a device capable of converting ultraviolet light signals into electric signals, and has wide prospects in the aspects of national defense, ultraviolet astronomy, environment monitoring, fire detection, turbine engine combustion efficiency monitoring, combustible gas component analysis, biological cell canceration detection and the like, and is a hotspot in the field of international photoelectric detection in recent years. With the advent of third generation wide bandgap semiconductor materials (such as group III nitrides, diamond, II-VI compounds, silicon carbide, etc.), particularly 4H-SiC materials, the development of ultraviolet detection technology has been promoted by the advent of ultraviolet photodetectors fabricated using the same, due to their characteristics of wide bandgap, high critical breakdown electric field, high thermal conductivity, etc.
Despite the great efforts of many researchers, low responsivity, low quantum efficiency, is a drawback that silicon carbide-based uv detectors have not yet been perfectly addressed. At present, two main solutions are an electrical management solution and an optical management solution. Electrical management aims to use devices with gain structures to improve responsiveness, but often requires high requirements for processes such as epitaxy, and the like, and is complex in process and high in cost. The optical management concept aims to promote the absorption and utilization of light by the device but theoretically has no utilization rate exceeding 100%.
Disclosure of Invention
In order to solve the problems in the prior art, the invention provides a beta-gallium oxide/4H-silicon carbide heterojunction ultra-high temperature ultraviolet detector and a preparation method thereof. The technical problems to be solved by the invention are realized by the following technical scheme:
a beta-gallium oxide/4H-silicon carbide heterojunction ultra-high temperature ultraviolet detector comprising: an N+ type 4H-SiC substrate, an N-type 4H-SiC epitaxial layer and beta-Ga which are sequentially arranged from bottom to top 2 O 3 A functional layer;
the beta-Ga 2 O 3 The functional layer is provided with a first metal electrode layerThe first metal electrode layer and the second metal electrode layer are respectively provided with a third metal electrode layer;
the beta-Ga 2 O 3 The functional layer has electron concentration of 1×10 17 cm -3 N-beta-Ga of (a) 2 O 3 ；
The first metal electrode layer forms ohmic contact with a third metal electrode layer on the first metal electrode layer, and the second metal electrode layer forms Schottky contact with the third metal electrode layer on the second metal electrode layer;
the thicknesses of the first metal electrode layer, the second metal electrode layer and the third metal electrode layer are all 10nm;
the first metal electrode layer adopts metal Ti, the second metal electrode layer adopts metal Ni, and the third metal electrode layer adopts metal Au.
Further, the doping concentration of the N+ type 4H-SiC substrate is 5 multiplied by 10 19 cm -3 The doping ions are nitrogen ions.
Further, the first metal electrode layer and the third metal electrode layer on the first metal electrode layer and the second metal electrode layer and the third metal electrode layer on the second metal electrode layer form an interdigital electrode structure.
The second aspect of the embodiment of the invention provides a preparation method of a beta-gallium oxide/4H-silicon carbide heterojunction ultra-high temperature ultraviolet detector, which comprises the following steps:
step one, epitaxially growing an N-type 4H-SiC epitaxial layer on an N+ type 4H-SiC substrate;
sputtering beta-Ga on the surface of the N-type 4H-SiC epitaxial layer by using a magnetron sputtering process 2 O 3 Functional layer and to the beta-Ga 2 O 3 O is carried out on the surface of the functional layer 3 Pretreatment; wherein the beta-Ga 2 O 3 The functional layer has electron concentration of 1×10 17 cm -3 N-beta-Ga of (a) 2 O 3 ；
Step three, at the beta-Ga 2 O 3 The surface of the functional layer uses standard lightPhotoetching an ohmic contact electrode pattern by using a photoetching process, and growing ohmic contact metal after photoetching to form a first metal electrode layer and a third metal electrode layer on the first metal electrode layer; the thickness of the first metal electrode layer and the third metal electrode layer is 10nm;
the first metal electrode layer adopts metal Ti, and the third metal electrode layer adopts metal Au;
thermally annealing in a nitrogen environment to form ohmic contact;
step five, at the beta-Ga 2 O 3 The surface of the functional layer is subjected to photoetching of an ohmic contact electrode pattern by using a standard photoetching process, schottky contact metal is grown after photoetching, a second metal electrode layer and a third metal electrode layer on the second metal electrode layer are formed, and the detector of the first aspect of the embodiment of the invention is obtained after preparation;
wherein the thickness of the second metal electrode layer is 10nm; the second metal electrode layer adopts metal Ni.
The invention has the beneficial effects that:
the ultraviolet photoelectric detector passes through beta-Ga 2 O 3 The 4H-SiC heterojunction structure can realize a high-temperature detection function and has higher responsivity. Meanwhile, the first metal electrode, the second metal electrode and the third metal electrode use transparent electrodes, so that the light receiving area of the detector is greatly increased, and the detection performance of the detector is greatly improved.
The present invention will be described in further detail with reference to the accompanying drawings and examples.
Drawings
Fig. 1 is a schematic structural diagram of a β -gallium oxide/4H-silicon carbide heterojunction ultra-high temperature ultraviolet detector according to an embodiment of the present invention:
fig. 2 is a schematic top view of a metal electrode according to an embodiment of the present invention.
Reference numerals illustrate:
a 1-N+ type 4H-SiC substrate; a 2-N-type 4H-SiC epitaxial layer; 3-beta-Ga 2 O 3 A functional layer; 4-a first metal electrode layer; 5-a second metal electrode layer; 6-third metal electrodeA layer.
Detailed Description
The present invention will be described in further detail with reference to specific examples, but embodiments of the present invention are not limited thereto.
Example 1
Referring to fig. 1, a first aspect of an embodiment of the present invention provides a β -gallium oxide/4H-silicon carbide heterojunction ultra-high temperature ultraviolet detector, comprising: the N+ type 4H-SiC substrate 1, the N-type 4H-SiC epitaxial layer 2 and the beta-Ga are sequentially arranged from bottom to top 2 O 3 Functional layer 3.
The beta-Ga 2 O 3 The functional layer 3 has an electron concentration of 1×10 17 cm -3 N-beta-Ga of (a) 2 O 3 。
The beta-Ga 2 O 3 The functional layer 3 is provided with a first metal electrode layer 4 and a second metal electrode layer 5, and the first metal electrode layer 4 and the second metal electrode layer 5 are provided with a third metal electrode layer 6. The first metal electrode layer 4 forms ohmic contact with the third metal electrode layer 6 on the first metal electrode layer 4, and the second metal electrode layer 5 forms schottky contact with the third metal electrode layer 6 on the second metal electrode layer 5. The thicknesses of the first metal electrode layer 4, the second metal electrode layer 5 and the third metal electrode layer 6 are 10nm. The first metal electrode layer 4 adopts metal Ti, the second metal electrode layer 5 adopts metal Ni, and the third metal electrode layer 6 adopts metal Au.
In the embodiment, the metal electrode has good light transmittance, the metal electrode is a transparent electrode, and meanwhile, the thickness of the metal electrode is thinner, so that the light transmittance of the metal electrode is further enhanced, the light utilization rate of the device is greatly improved, and the detection performance of the device is greatly improved. At the same time by beta-Ga 2 O 3 The 4H-SiC heterojunction structure can realize the detection function of high temperature above 150 ℃ and has higher responsivity.
Preferably, the doping concentration of the N+ type 4H-SiC substrate 1 is 5×10 19 cm -3 The doping ions are nitrogen ions. The N-type 4H-SiC epitaxial layer 2 is made of N-type 4H-SiC material and is subjected to epitaxyControlling doping in the process, wherein the doping concentration is 1 multiplied by 10 16 cm -3 The doping ions are nitrogen ions.
Preferably, as shown in fig. 2, the first metal electrode layer 4 and the third metal electrode layer 6 on the first metal electrode layer 4 and the second metal electrode layer 5 and the third metal electrode layer 6 on the second metal electrode layer 5 form an inter-digitated electrode structure.
Example two
The second aspect of the embodiment of the invention provides a preparation method of a beta-gallium oxide/4H-silicon carbide heterojunction ultra-high temperature ultraviolet detector, which comprises the following steps:
step one, an N-type 4H-SiC epitaxial layer 2 is epitaxially grown on an N+ type 4H-SiC substrate 1.
Specifically, at a thickness of 300 μm, the nitrogen doping concentration was 5X 10 19 cm -3 Performing RCA standard cleaning on the 4H-SiC substrate to form an N+ type 4H-SiC substrate 1; then epitaxially grown on the N+ type 4H-SiC substrate 1 to a thickness of 5 μm with a doping concentration of 1×10 16 cm -3 N-type 4H-SiC epitaxial layer 2;
step two, sputtering beta-Ga with thickness of 100nm on the surface of the N-type 4H-SiC epitaxial layer 2 by using a magnetron sputtering process 2 O 3 The functional layer 3 comprises the following technological parameters: voltage, gas pressure, time, rate (RF-70W, oxygen argon 1:20, gas flow 21sccm, growth duration 30 min), and for the beta-Ga 2 O 3 O is carried out on the surface of the functional layer 3 3 Pretreatment is carried out for 10min. Wherein the beta-Ga 2 O 3 The functional layer 3 has an electron concentration of 1×10 17 cm -3 N-beta-Ga of (a) 2 O 3 。
Step three, at the beta-Ga 2 O 3 The surface of the functional layer 3 is subjected to photoetching to form an ohmic contact electrode pattern by using a standard photoetching process, the electrode pattern is in an interdigital shape, the length and the line width of the electrode pattern are respectively 80 mu m and 3 mu m, ohmic contact metal grows after photoetching, and a first metal electrode layer 4 and a third metal electrode layer 6 on the first metal electrode layer 4 are formed; the thickness of the first metal electrode layer 4 and the third metal electrode layer 6 are 10nm. The first metal electrode layer 4 adopts metal Ti, the first metal electrode layerThe three-metal electrode layer 6 is made of metal Au.
And fourthly, rapidly thermally annealing for 120s at the temperature of 460 ℃ in a nitrogen environment to form ohmic contact.
Step five, at the beta-Ga 2 O 3 The surface of the functional layer 3 is photoetched with an ohmic contact electrode pattern by using a standard photoetching process, the electrode pattern is an interdigital pattern, the length and the line width of the electrode pattern are respectively 80 μm and 3 μm, schottky contact metal is grown after photoetching, a second metal electrode layer 5 and a third metal electrode layer 6 on the second metal electrode layer 5 are formed, and the preparation is completed to obtain the detector of the first embodiment.
Wherein the thickness of the second metal electrode layer 5 is 10nm; the thickness of the third metal electrode layer 6 on the second metal electrode layer 5 was 10nm. The second metal electrode layer 5 adopts metal Ni.
In the embodiment, the N-type 4H-SiC epitaxial layer 2 has good quality, low defects and simple preparation method, and the preparation cost is greatly reduced. At the same time, beta-Ga grows on the high-quality N-type 4H-SiC epitaxial layer 2 2 O 3 The quality of the functional layer 3 is better, and the performance of the detector is improved.
In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings are merely for convenience in describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present invention.
Furthermore, the terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include one or more such feature. In the description of the present invention, the meaning of "a plurality" is two or more, unless explicitly defined otherwise.
In the present invention, unless explicitly specified and limited otherwise, the terms "mounted," "connected," "secured," and the like are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communicated with the inside of two elements or the interaction relationship of the two elements. The specific meaning of the above terms in the present invention can be understood by those of ordinary skill in the art according to the specific circumstances.
In the present invention, unless expressly stated or limited otherwise, a first feature "above" or "below" a second feature may include both the first and second features being in direct contact, as well as the first and second features not being in direct contact but being in contact with each other through additional features therebetween. Moreover, a first feature being "above," "over" and "on" a second feature includes the first feature being directly above and obliquely above the second feature, or simply indicating that the first feature is higher in level than the second feature. The first feature being "under", "below" and "beneath" the second feature includes the first feature being directly under and obliquely below the second feature, or simply means that the first feature is less level than the second feature.
In the description of the present specification, a description referring to terms "one embodiment," "some embodiments," "examples," "specific examples," or "some examples," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the present invention. In this specification, schematic representations of the above terms are not necessarily directed to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Further, one skilled in the art can engage and combine the different embodiments or examples described in this specification.
The foregoing is a further detailed description of the invention in connection with the preferred embodiments, and it is not intended that the invention be limited to the specific embodiments described. It will be apparent to those skilled in the art that several simple deductions or substitutions may be made without departing from the spirit of the invention, and these should be considered to be within the scope of the invention.
Claims (4)
1. A beta-gallium oxide/4H-silicon carbide heterojunction ultra-high temperature ultraviolet detector, comprising: an N+ type 4H-SiC substrate (1), an N-type 4H-SiC epitaxial layer (2) and beta-Ga which are sequentially arranged from bottom to top 2 O 3 A functional layer (3);
the beta-Ga 2 O 3 A first metal electrode layer (4) and a second metal electrode layer (5) are arranged on the functional layer (3), and a third metal electrode layer (6) is arranged on each of the first metal electrode layer (4) and the second metal electrode layer (5);
the beta-Ga 2 O 3 The functional layer (3) has an electron concentration of 1×10 17 cm -3 N-beta-Ga of (a) 2 O 3 ；
The first metal electrode layer (4) and the third metal electrode layer (6) on the first metal electrode layer (4) and beta-Ga under the first metal electrode layer (4) 2 O 3 The functional layer (3) forms ohmic contact, the second metal electrode layer (5) and the third metal electrode layer (6) on the second metal electrode layer (5) are in contact with beta-Ga under the second metal electrode layer (5) 2 O 3 The functional layer (3) forms a Schottky contact;
the thicknesses of the first metal electrode layer (4), the second metal electrode layer (5) and the third metal electrode layer (6) are 10nm;
the first metal electrode layer (4) adopts metal Ti, the second metal electrode layer (5) adopts metal Ni, and the third metal electrode layer (6) adopts metal Au;
wherein the N+ type 4H-SiC substrate (1), the N-type 4H-SiC epitaxial layer (2) and the beta-Ga 2 O 3 The functional layer (3) forms beta-Ga 2 O 3 4H-SiC heterojunction structure; each metal electrode layer is a transparent electrode.
2. The ultra-high temperature ultraviolet detector of the beta-gallium oxide/4H-silicon carbide heterojunction as claimed in claim 1, wherein the doping concentration of the N+ type 4H-SiC substrate (1) is 5 x 10 19 cm -3 The doping ions are nitrogen ions.
3. The ultra-high temperature ultraviolet detector of a beta-gallium oxide/4H-silicon carbide heterojunction as claimed in claim 1, wherein the first metal electrode layer (4) and the third metal electrode layer (6) on the first metal electrode layer (4) and the second metal electrode layer (5) and the third metal electrode layer (6) on the second metal electrode layer (5) form an inter-digitated electrode structure.
4. The preparation method of the beta-gallium oxide/4H-silicon carbide heterojunction ultra-high temperature ultraviolet detector is characterized by comprising the following steps of:
step one, epitaxially growing an N-type 4H-SiC epitaxial layer (2) on an N+ type 4H-SiC substrate (1);
sputtering beta-Ga on the surface of the N-type 4H-SiC epitaxial layer (2) by using a magnetron sputtering process 2 O 3 A functional layer (3) and for the beta-Ga 2 O 3 O is carried out on the surface of the functional layer (3) 3 Pretreatment; wherein the beta-Ga 2 O 3 The functional layer (3) has an electron concentration of 1×10 17 cm -3 N-beta-Ga of (a) 2 O 3 ；
Step three, at the beta-Ga 2 O 3 The surface of the functional layer (3) is subjected to photoetching of an ohmic contact electrode pattern by using a standard photoetching process, ohmic contact metal grows after photoetching, and a first metal electrode layer (4) and a third metal electrode layer (6) on the first metal electrode layer (4) are formed; the thickness of the first metal electrode layer (4) and the thickness of the third metal electrode layer (6) are 10nm;
the first metal electrode layer (4) adopts metal Ti, and the third metal electrode layer (6) adopts metal Au;
thermally annealing in a nitrogen environment to form ohmic contact;
step five, at the beta-Ga 2 O 3 The surface of the functional layer (3) is subjected to photoetching of an ohmic contact electrode pattern by using a standard photoetching process, schottky contact metal is grown after photoetching, a second metal electrode layer (5) and a third metal electrode layer (6) on the second metal electrode layer (5) are formed, and the detector as claimed in any one of claims 1-3 is obtained after preparation;
wherein the thickness of the second metal electrode layer (5) is 10nm; the second metal electrode layer (5) adopts metal Ni; n+ type 4H-SiC substrate (1), N-type 4H-SiC epitaxial layer (2) and beta-Ga 2 O 3 The functional layer (3) forms beta-Ga 2 O 3 4H-SiC heterojunction structure; each metal electrode layer is a transparent electrode.
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Citations (2)
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|---|---|---|---|---|
| CN107230734A (en) * | 2017-05-23 | 2017-10-03 | 中国人民解放军63791部队 | A kind of BeMgZnO base ultraviolet detectors of back-to-back Schottky junction structure and preparation method thereof |
| CN113555466A (en) * | 2021-06-09 | 2021-10-26 | 浙江芯国半导体有限公司 | Photoelectric detector of SiC-based gallium oxide micron line and preparation method thereof |
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| KR20120120826A (en) * | 2011-04-25 | 2012-11-02 | 삼성전기주식회사 | Nitride semiconductor device and manufacturing method thereof |
| US9887309B2 (en) * | 2012-12-13 | 2018-02-06 | The Board of Regents of the University of Okalahoma | Photovoltaic lead-salt semiconductor detectors |
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| CN107230734A (en) * | 2017-05-23 | 2017-10-03 | 中国人民解放军63791部队 | A kind of BeMgZnO base ultraviolet detectors of back-to-back Schottky junction structure and preparation method thereof |
| CN113555466A (en) * | 2021-06-09 | 2021-10-26 | 浙江芯国半导体有限公司 | Photoelectric detector of SiC-based gallium oxide micron line and preparation method thereof |
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| "A Strategic Review on Gallium Oxide Based Deep-Ultraviolet Photodetectors: Recent Progress and Future Prospects";Damanpreet Kaur;《Adv. Optical Mater.》;1-34页 * |
| "Highly preferred orientation of Ga2O3 films sputtered on SiC substrates for deep UV photodetector application";Meng-Qiu Li;《Applied Surface Science》;694-702页 * |
| "Post-annealing effects on RF sputtered all-amorphous ZnO/SiC heterostructure for solar-blind highly-detective and ultralow dark-noise UV photodetector";H. Ferhati;《Journal of Non-Crystalline Solids》;1-8页 * |
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