CN114843356A - Wafer-level III-VI compound thin film material, preparation method and application - Google Patents
Wafer-level III-VI compound thin film material, preparation method and application Download PDFInfo
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- 229910052798 chalcogen Inorganic materials 0.000 claims abstract description 9
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- 229910052711 selenium Inorganic materials 0.000 claims description 2
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
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Abstract
The invention belongs to the technical field of photoelectric detectors for visible light communication, and discloses a wafer-level III-VI compound thin film material, a preparation method and application thereof, wherein the wafer-level III-VI compound thin film material comprises an insulating substrate layer, and a III-VI compound thin film layer and an electrode layer which are sequentially stacked on the insulating substrate layer; the chemical formula of the III-VI compound thin film layer is In 2 X 3 And which is provided on the insulating liner by the following stepsOn the bottom layer: evaporating and plating an In metal layer on the insulating substrate layer; then, adopting a chemical vapor deposition method and taking X powder as a precursor to react the In metal layer to form In 2 X 3 Obtaining a III-VI compound thin film layer; wherein X is a chalcogen element. The invention combines the electron beam evaporation coating and the chemical vapor deposition technology to prepare the wafer-level III-VI compound thin film material. The method is simple and easy to operate.
Description
Technical Field
The invention relates to the technical field of photoelectric detectors for visible light communication, in particular to a wafer-level III-VI compound thin film material, a preparation method and application.
Background
In recent years, with the rapid development of new solid-state lighting, the visible light communication technology has also advanced significantly. The visible light communication is a wireless light communication technology based on a white light emitting diode technology, can simultaneously realize two functions of illumination and high-speed data transmission, has the characteristics of high signal density coverage, high confidentiality and safety, electromagnetic interference resistance, wide frequency spectrum range and the like, and can realize high-speed, stable and safe communication transmission. As an unlimited white space spectrum area, the signal has no interference with the traditional radio wave, and the frequency spectrum of the next generation wide communication is developed.
The size of the traditional Si-based detector is continuously reduced, the density of the transistor is exponentially increased, and the short channel effect of the transistor limits the further improvement of the performance of the transistor. Compared with a Si-based detector, the novel two-dimensional detector has the advantages of small size, easiness in carrying and integration, high breakdown electric field and the like, and further development of the visible light detector is promoted.
The III-VI compound as a novel two-dimensional Van der Waals semiconductor material has the characteristics of high carrier mobility, high thermal stability, good chemical stability, adjustable forbidden band width along with the number of layers and the like, can realize the adjustable forbidden band width of 2-2.7eVI, and correspondingly realizes visible light detection with the wavelength of 460-620 nm. However, since the conventional chemical vapor deposition technology is difficult to realize the growth of large-area III-VI compounds, and the growth process is complex and uncontrollable, there is no report on wafer-level III-VI compound thin films, which limits the further application of visible light detectors in integrated circuits.
Therefore, the invention provides a wafer-level III-VI compound thin film material, a preparation method and application.
Disclosure of Invention
In order to solve the defects in the prior art, the invention provides a wafer-level III-VI compound thin film material, a preparation method and application. The invention combines the electron beam evaporation coating and the chemical vapor deposition technology to prepare the wafer-level III-VI compound thin film material. The method is simple and easy to operate.
The invention discloses a wafer-level III-VI compound thin film material, a preparation method and application, which are realized by the following technical scheme:
the first purpose of the invention is to provide a wafer level III-VI compound thin film material, which comprises an insulating substrate layer, and a III-VI compound thin film layer and an electrode layer which are sequentially stacked on the insulating substrate layer;
the chemical formula of the III-VI compound thin film layer is In 2 X 3 And is disposed on the insulating substrate layer by:
evaporating an In metal layer (indium metal layer) on the insulating substrate layer; then, using X powder as a precursor by adopting a chemical vapor deposition method, and reacting the In metal layer to form In 2 X 3 Obtaining the III-VI compound thin film layer;
wherein X is a chalcogen element.
Further, the insulating substrate layer is Si/SiO 2 Substrate layer of said Si/SiO 2 The substrate layer comprises a Si layer, and SiO arranged on the Si layer 2 A layer;
and the group III-VI compound thin film is providedIs arranged on the SiO 2 On the layer, the SiO 2 The layers are all covered.
Further, the chalcogen element is any one of sulfur, selenium and tellurium.
Further, the thickness of the electrode layer is 10-200 nm;
the diameter of the insulating substrate layer is 2-4 inches, and the thickness of the insulating substrate layer is 300 nm.
Further, the electrode layer comprises a first electrode layer and a second electrode layer arranged on the first electrode layer; and the first electrode layer is arranged on the III-VI compound thin film layer.
Furthermore, the first electrode layer is made of Ti; the second electrode layer is made of Au.
Further, the thickness of the first electrode layer is 30-60 nm; the thickness of the second electrode layer is 60-150 nm.
The second purpose of the invention is to provide a preparation method of the wafer-level III-VI compound thin film material, which comprises the following steps:
wherein X is a chalcogen element.
Further, in step 2, the wafer-level III-VI compound thin film layer is prepared by the following steps:
annealing the wafer-level In metal layer for 10-30 min at 700-800 ℃ In an atmosphere of standard atmospheric pressure Ar; however, the device is not suitable for use in a kitchenThen, taking the chalcogen as a precursor, annealing for 10-30 min at the temperature of 120-200 ℃, and forming In on the In metal layer 2 X 3 And obtaining the wafer-level III-VI compound thin film layer.
Further, in the step 3, the annealing temperature is 400-500 ℃, and the annealing time is 5-15 min.
The third purpose of the invention is to provide an application of the wafer-level III-VI compound thin film material in the preparation of a photoelectric detector for visible light communication.
Compared with the prior art, the invention has the following beneficial effects:
the invention realizes the preparation of the wafer-level III-VI compound thin film material by combining the molecular beam evaporation coating technology and the chemical vapor deposition technology, and the wafer-level III-VI compound thin film material prepared by the invention can be used as a photoelectric detector. The problems of complex process, small area of prepared materials and the like of the traditional chemical vapor deposition technology are solved. The process is simple.
The preparation method disclosed by the invention is simple and controllable to operate, does not need a harsh growth environment, and has important significance for realizing the photoelectric detector device for high-sensitivity visible light communication.
Drawings
FIG. 1 is a schematic diagram of a longitudinal planar structure of a wafer-level III-VI compound thin film material according to the present invention;
FIG. 2 shows SiO in example 1 of the present invention 2 Epitaxial growth of In on Si substrate 2 S 3 A Raman characterization of the film;
FIG. 3 is a schematic diagram of In preparation In example 1 of the present invention 2 S 3 And (3) a current-voltage curve (365nm) graph of a base visible light detector under different ultraviolet light illumination intensities.
Detailed Description
The technical solution in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention.
Example 1
Referring to fig. 1, the present embodiment provides a wafer-level III-VI compound thin film material, which includes an insulating substrate layer, and a III-VI compound thin film layer 3, a Ti electrode layer 4, and an Au electrode layer 5 sequentially stacked on the insulating substrate layer;
in is optionally used for the group III-VI compound thin film layer 3 of the present embodiment 2 S 3 A thin film layer. And the specific material of the insulating substrate layer is not limited in this embodiment. In this embodiment, Si/SiO may be optionally used 2 Substrate layer of Si/SiO 2 The source of the substrate layer is not limited and can be commercially available or prepared according to prior art processes, as long as it is ensured that the group III-VI compound thin film layer, i.e., In, is deposited 2 S 3 Layer arranged on Si/SiO 2 SiO of the substrate layer 2 On layer 2, and SiO 2 The layer 2 is covered completely; that is, Si/SiO 2 The Si layer 1 in the substrate layer serves as the bottom most layer.
In this example, the thickness of the Ti electrode layer 4 was 30nm, and the thickness of the Au electrode layer 5 was 60 nm.
The preparation method of the wafer-level III-VI compound thin film material of the present embodiment is as follows:
in this example, the operation of the electron beam evaporation coating method is not limited to the specific operation, as long as the Si/SiO film can be formed 2 Evaporating an In metal layer on the substrate layer, and enabling the In metal layer to be Si/SiO 2 SiO in the substrate layer 2 The layer is covered completely.
it should be noted that the specific type and model of the chemical vapor deposition apparatus are not limited In this embodiment, as long as the substrate with the wafer-level In metal layer of the present invention can meet the basic requirements of the chemical vapor deposition method.
it should be noted that, the specific shape of the electrode shape is not limited in this embodiment, and the corresponding electrode shape may be formed by photolithography according to the requirements of the actual usage scenario.
It should be noted that the present invention is applied to wafer level In 2 S 3 After the electrode layer is evaporated on the thin film layer, the unexposed photoresist is stripped and cleaned, and then annealing treatment is carried out on the unexposed photoresist.
Example 2
The embodiment provides a wafer-level III-VI compound thin film material, which comprises an insulating substrate layer, and a III-VI compound thin film layer 3, a Ti electrode layer 4 and an Au electrode layer 5 which are sequentially stacked on the insulating substrate layer;
in is optionally used for the group III-VI compound thin film layer 3 of the present embodiment 2 Se 3 A thin film layer. And the specific material of the insulating substrate layer is not limited in this embodiment. In this embodiment, Si/SiO may be optionally used 2 Substrate layer of Si/SiO 2 The source of the substrate layer is not limited and can be commercially available or prepared according to prior art processes, as long as it is ensured that the group III-VI compound thin film layer, i.e., In, is deposited 2 Se 3 Layer arranged on Si/SiO 2 SiO of the substrate layer 2 On layer 2, and SiO 2 The layer 2 is covered completely; that is, Si/SiO 2 Si layer 1 in substrate layerIs the lowest layer.
In this example, the thickness of the Ti electrode layer 4 was 50nm, and the thickness of the Au electrode layer 5 was 100 nm.
The preparation method of the wafer-level III-VI compound thin film material of the present embodiment is as follows:
in this example, the specific operation of the electron beam evaporation coating method is not limited as long as the Si/SiO film can be formed 2 Evaporating an In metal layer on the substrate layer, and enabling the In metal layer to be made of Si/SiO 2 SiO in the substrate layer 2 The layer is covered completely.
it should be noted that the specific type and model of the chemical vapor deposition apparatus are not limited In this embodiment, as long as the substrate with the wafer-level In metal layer of the present invention can meet the basic requirements of the chemical vapor deposition method.
it should be noted that, the specific shape of the electrode shape is not limited in this embodiment, and the corresponding electrode shape may be formed by photolithography according to the requirements of the actual usage scenario.
It should be noted that the present invention is applied to wafer level In 2 S 3 After the electrode layer is evaporated on the thin film layer, the unexposed photoresist is stripped and cleaned, and then annealing treatment is carried out on the unexposed photoresist.
Example 3
The embodiment provides a wafer-level III-VI compound thin film material, which comprises an insulating substrate layer, and a III-VI compound thin film layer 3, a Ti electrode layer 4 and an Au electrode layer 5 which are sequentially stacked on the insulating substrate layer;
in is optionally used for the group III-VI compound thin film layer 3 of the present embodiment 2 Te 3 A thin film layer. And the specific material of the insulating substrate layer is not limited in this embodiment. In this embodiment, Si/SiO may be optionally used 2 Substrate layer of Si/SiO 2 The source of the substrate layer is not limited and can be commercially available or prepared according to prior art processes, as long as it is ensured that the group III-VI compound thin film layer, i.e., In, is deposited 2 Te 3 Layer arranged on Si/SiO 2 SiO of the substrate layer 2 On layer 2, and SiO 2 The layer 2 is covered completely
In this example, the thickness of the Ti electrode layer 4 was 30nm, and the thickness of the Au electrode layer 5 was 100 nm.
The preparation method of the wafer-level III-VI compound thin film material of the present embodiment is as follows:
in this example, the specific operation of the electron beam evaporation coating method is not limited as long as the Si/SiO film can be formed 2 Evaporating an In metal layer on the substrate layer, and enabling the In metal layer to be made of Si/SiO 2 SiO in the substrate layer 2 The layer is covered completely.
it should be noted that the specific type and model of the chemical vapor deposition apparatus are not limited In this embodiment, as long as the substrate with the wafer-level In metal layer of the present invention can meet the basic requirements of the chemical vapor deposition method.
Test section
(I) Raman testing
In order to verify the In the wafer level III-VI compound thin film material 2 X 3 Successful preparation of thin film layer, the invention takes the wafer level III-VI compound thin film material prepared in example 1 as an example, for SiO 2 Epitaxial growth of In on Si substrate 2 S 3 The film was subjected to Raman measurement with a laser having a wavelength of 532nm, and the results are shown in FIG. 2.
As can be seen from FIG. 2, In is shown 2 S 3 Indicating In example 1 of the present invention 2 S 3 And (4) successfully preparing the film.
(II) Current-Voltage Curve test
In order to illustrate that the wafer-level III-VI compound thin film material of the present invention can be used as a visible light detector, the wafer-level III-VI compound thin film material prepared in example 1 is used as a visible light detector, and a current-voltage curve (365nm) of the wafer-level III-VI compound thin film material under different ultraviolet light irradiation intensities is tested, and the test results are shown in fig. 3.
As can be seen from fig. 3, the photocurrent increases with the increase of the optical power, which reveals a significant photoelectric characteristic of the visible light detector of embodiment 1, indicating that the wafer-level III-VI compound thin film material of the present invention can be applied to the research on the visible light detector as the visible light detector.
It is to be understood that the above-described embodiments are only a few embodiments of the present invention, and not all embodiments. All other embodiments, which can be obtained by a person skilled in the art without making any creative effort based on the embodiments in the present invention, belong to the protection scope of the present invention.
Claims (10)
1. A wafer-level III-VI compound thin film material is characterized by comprising an insulating substrate layer, and a III-VI compound thin film layer and an electrode layer which are sequentially stacked on the insulating substrate layer;
the chemical formula of the III-VI compound thin film layer is In 2 X 3 And is disposed on the insulating substrate layer by:
evaporating and plating an In metal layer on the insulating substrate layer; then, using X powder as a precursor by adopting a chemical vapor deposition method, and reacting the In metal layer to form In 2 X 3 Obtaining the III-VI compound thin film layer;
wherein X is a chalcogen element.
2. The wafer-level III-VI compound thin film material of claim 1, wherein the insulating substrate layer is Si/SiO 2 Substrate layer of said Si/SiO 2 The substrate layer comprises a Si layer, and SiO arranged on the Si layer 2 A layer;
and the III-VI compound thin film layer is arranged on the SiO 2 On the layer, the SiO 2 The layers are all covered.
3. The wafer-level III-VI compound thin film material of claim 1, wherein the chalcogen is any one of sulfur, selenium and tellurium.
4. The wafer-level III-VI compound thin film material of claim 1, wherein the electrode layer has a thickness of 10-200 nm;
the diameter of the insulating substrate layer is 2-4 inches, and the thickness of the insulating substrate layer is 300 nm.
5. The wafer-level III-VI compound thin film material of claim 1, wherein the electrode layer comprises a first electrode layer, and a second electrode layer disposed on the first electrode layer;
and the first electrode layer is arranged on the III-VI compound thin film layer.
6. The wafer-level III-VI compound thin film material of claim 5, wherein the first electrode layer is made of Ti; the second electrode layer is made of Au.
7. A method for preparing a wafer-level III-VI compound thin film material according to any one of claims 1-6, comprising the steps of:
step 1, evaporating an In metal layer on an insulating substrate layer by adopting an electron beam evaporation coating method to obtain a wafer-level In metal layer;
step 2, reacting the In metal layer to form In by adopting a chemical vapor deposition method and taking X powder as a precursor 2 X 3 Obtaining a wafer-level III-VI compound thin film layer;
step 3, evaporating an electrode layer on the wafer-level III-VI compound thin film layer by adopting a molecular beam evaporation coating method, so that ohmic contact is formed between the electrode layer and the wafer-level III-VI compound thin film layer, and then annealing to obtain the wafer-level III-VI compound thin film material;
wherein X is a chalcogen element.
8. The method of claim 7, wherein in step 2, the wafer-level III-VI compound thin film layer is formed by:
annealing the wafer-level In metal layer for 10-30 min at the temperature of 700-800 ℃ under the atmosphere of standard atmospheric pressure Ar; then, taking the chalcogen as a precursor, annealing for 10-30 min at the temperature of 120-200 ℃, and reacting the In metal layer to form In 2 X 3 And obtaining the wafer-level III-VI compound thin film layer.
9. The method according to claim 7, wherein in the step 3, the annealing temperature is 400 to 500 ℃ and the annealing time is 5 to 15 min.
10. Use of the wafer-level III-VI compound thin film material as claimed in any one of claims 1 to 6 in the preparation of a photodetector for visible light communication.
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