CN114836738A - Capacitor film grading treatment device and method - Google Patents
Capacitor film grading treatment device and method Download PDFInfo
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- CN114836738A CN114836738A CN202210492843.2A CN202210492843A CN114836738A CN 114836738 A CN114836738 A CN 114836738A CN 202210492843 A CN202210492843 A CN 202210492843A CN 114836738 A CN114836738 A CN 114836738A
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- power supply
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- 239000003990 capacitor Substances 0.000 title claims abstract description 40
- 238000000034 method Methods 0.000 title claims abstract description 24
- 239000010408 film Substances 0.000 claims abstract description 116
- 238000000151 deposition Methods 0.000 claims abstract description 27
- 230000008021 deposition Effects 0.000 claims abstract description 27
- 239000011248 coating agent Substances 0.000 claims abstract description 17
- 238000000576 coating method Methods 0.000 claims abstract description 17
- 238000000231 atomic layer deposition Methods 0.000 claims abstract description 13
- 239000002184 metal Substances 0.000 claims abstract description 10
- 229910052751 metal Inorganic materials 0.000 claims abstract description 10
- 238000001465 metallisation Methods 0.000 claims description 15
- 239000002243 precursor Substances 0.000 claims description 13
- 238000004804 winding Methods 0.000 claims description 12
- 239000007789 gas Substances 0.000 claims description 11
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 claims description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- 238000001704 evaporation Methods 0.000 claims description 6
- 230000004888 barrier function Effects 0.000 claims description 5
- 229910052809 inorganic oxide Inorganic materials 0.000 claims description 5
- 229920006254 polymer film Polymers 0.000 claims description 5
- -1 polytetrafluoroethylene Polymers 0.000 claims description 5
- 239000002033 PVDF binder Substances 0.000 claims description 4
- 239000004642 Polyimide Substances 0.000 claims description 4
- 229920001721 polyimide Polymers 0.000 claims description 4
- 239000004810 polytetrafluoroethylene Substances 0.000 claims description 4
- 229920001343 polytetrafluoroethylene Polymers 0.000 claims description 4
- 229920002981 polyvinylidene fluoride Polymers 0.000 claims description 4
- 239000010409 thin film Substances 0.000 claims description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 3
- 239000004793 Polystyrene Substances 0.000 claims description 3
- 239000003570 air Substances 0.000 claims description 3
- 229910052786 argon Inorganic materials 0.000 claims description 3
- HQWPLXHWEZZGKY-UHFFFAOYSA-N diethylzinc Chemical compound CC[Zn]CC HQWPLXHWEZZGKY-UHFFFAOYSA-N 0.000 claims description 3
- 239000001307 helium Substances 0.000 claims description 3
- 229910052734 helium Inorganic materials 0.000 claims description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 3
- 229910052754 neon Inorganic materials 0.000 claims description 3
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 238000003672 processing method Methods 0.000 claims description 3
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical group C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 229920002223 polystyrene Polymers 0.000 claims description 2
- 239000011104 metalized film Substances 0.000 abstract description 16
- 238000005516 engineering process Methods 0.000 abstract description 10
- 239000000758 substrate Substances 0.000 abstract description 10
- 230000015556 catabolic process Effects 0.000 abstract description 9
- 239000000463 material Substances 0.000 abstract description 8
- 239000010410 layer Substances 0.000 abstract description 5
- 239000002346 layers by function Substances 0.000 abstract description 4
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- 238000002347 injection Methods 0.000 abstract description 3
- 239000007924 injection Substances 0.000 abstract description 3
- 238000002955 isolation Methods 0.000 abstract description 3
- 230000003746 surface roughness Effects 0.000 abstract description 3
- 239000000853 adhesive Substances 0.000 abstract description 2
- 230000001070 adhesive effect Effects 0.000 abstract description 2
- 238000009776 industrial production Methods 0.000 abstract description 2
- 208000028659 discharge Diseases 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 description 8
- 230000008569 process Effects 0.000 description 7
- 229920006378 biaxially oriented polypropylene Polymers 0.000 description 6
- 239000011127 biaxially oriented polypropylene Substances 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 6
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- 239000002245 particle Substances 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229920001155 polypropylene Polymers 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
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- 239000000126 substance Substances 0.000 description 2
- 229940086542 triethylamine Drugs 0.000 description 2
- 230000003213 activating effect Effects 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000010891 electric arc Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000004146 energy storage Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 238000009998 heat setting Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000001883 metal evaporation Methods 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
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- 239000000376 reactant Substances 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
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- 239000000243 solution Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
- C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/20—Metallic material, boron or silicon on organic substrates
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/562—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks for coating elongated substrates
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
- C23C16/0245—Pretreatment of the material to be coated by cleaning or etching by etching with a plasma
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/301—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C23C16/303—Nitrides
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/403—Oxides of aluminium, magnesium or beryllium
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/407—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
- C23C28/32—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer
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- C—CHEMISTRY; METALLURGY
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
- C23C28/34—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
- C23C28/34—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates
- C23C28/345—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates with at least one oxide layer
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- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Abstract
The invention discloses a capacitor film grading treatment device and a capacitor film grading treatment method. The pretreatment unit regulates and controls the surface roughness of the film through surface treatment of discharge plasma, and improves the adhesive force of the film substrate. The functional layer deposition unit deposits a nanometer functional layer on the film substrate through an atomic layer deposition technology, so that the charge injection of the metal layer to the film material is inhibited, the breakdown field intensity threshold of the metalized film is improved, and the isolation self-healing performance of the metalized film is improved. The invention combines the plasma technology and the atomic layer deposition technology, quickly deposits the stable functional coating on the surface of the film and greatly improves the electrical performance of the capacitor film. Compared with the prior art, the grading continuous treatment method provided by the invention has the advantages of low cost, simple and convenient device, flexibility, high efficiency and the like, and is suitable for large-scale industrial production and application.
Description
Technical Field
The invention belongs to the field of capacitors, and particularly relates to a capacitor film grading treatment device and method.
Background
Metallized films are widely used in dry capacitor manufacture due to their superior combination of operating field strength, dielectric constant, dielectric loss, and the like. The metallized film capacitor has the self-healing characteristic, can work under the critical breakdown field intensity, has high energy storage density, and is widely applied to the fields of electric power systems, pulse power, aerospace and the like. However, the metallized film capacitor still has certain problems in the preparation process. For example, after the metal electrode is evaporated on the film, the breakdown field strength of the metallized film is obviously reduced due to the problems of metallization damage, interface bonding defect, uneven evaporation and the like, and the normal operation under the high field strength condition is difficult to meet. Therefore, how to improve the interface problem and the breakdown strength of the metallized film in the manufacturing process of the metallized film is a problem to be solved in the production of the film capacitor.
Currently, the process for manufacturing a thin film capacitor includes: white film, thin film metallization, element rolling, end gold spraying, element heat setting, energizing, screening, core manufacturing, product encapsulation and the like. In the manufacturing process of the film capacitor, the metallization of the film is an important ring, and the metallization technology has a direct influence on the electrical performance of the capacitor film. In the prior art, the production process of the film capacitor has the following defects: the problems of substrate damage, interface combination defect or uneven evaporation and the like can be caused in the film metallization process, so that the breakdown field intensity of the metallized film is obviously reduced, and the service life of the film capacitor is influenced. This problem has long been unresolved.
The chinese patent publication No. CN 107705988A proposes a method for manufacturing a film capacitor, in which after a metallized polypropylene film is stacked and wound to form a core, a pretreatment process is added: and placing the cold-pressed core in a sealed space, adjusting the temperature to 40 +/-5 ℃, and keeping the temperature for 2-10 hours under the humidity RH 35%. Although the method can effectively eliminate various stresses generated on the film, is not easy to deform, can ensure that the end face of the core is effectively led out, and ensures that the gold spraying layer is not easy to deform, the problem of interface defects existing in the interface of the metal and the film cannot be solved. The Chinese patent with publication number CN108962597A proposes a continuous production device and method for high-temperature high-performance capacitor films, and the method mainly solves the performance of the capacitor at high temperature and does not mention the problem of interface defects in the metallized film.
Plasma surface treatment techniques and atomic layer deposition techniques (ALD) are emerging technologies that have been developed in recent years. The plasma surface treatment technology has the advantages of rapidness, high efficiency, cleanness, no damage to the performance of the matrix and the like. Ionized gas is generated by high-voltage discharge, and a large number of active particles exist in the ionized gas, and the active particles enable the surface of the material to be subjected to etching, activating, crosslinking and other reactions, so that the surface property of the material is changed. The action process only relates to the nanometer-level thickness of the surface, and the overall physical and chemical properties are not influenced while the surface performance of the material is improved. Atomic layer deposition is a method of forming deposited films by alternately pulsing gaseous precursors into a reactor and chemisorbing reactions on the deposited substrate based on the self-limiting growth characteristics of the reactants. Advantages of ALD include: the deposition process is a saturated chemical adsorption process, and can ensure that a large-area uniform film is generated; controlling the reaction period to accurately control the growth of the film with the film thickness; can be carried out at low temperatures; the method is widely applicable to substrates with various shapes.
Disclosure of Invention
Aiming at the technical problems, the invention provides a capacitor film grading treatment device and a capacitor film grading treatment method which are used for functionally modifying an interface and improving the breakdown strength of a metalized film by introducing a pretreatment unit and a functional deposition unit.
In order to achieve the purpose, the invention adopts the technical scheme that:
a capacitor film grading treatment device comprises an unwinding shaft, a pretreatment unit, a functional deposition unit, a film metallization unit and a winding shaft; the unwinding shaft and the winding shaft are used for fixing a film to be processed; the pretreatment unit is composed of an upper electrode plate and a lower electrode plate, adopts a dielectric barrier discharge mode, applies high voltage between the upper electrode plate and the lower electrode plate, and excites working gas to generate low-temperature plasma; the functional deposition unit deposits a functional coating on the surface of the film to be processed by introducing a precursor by utilizing an atomic layer deposition method; the film metallization unit is used for evaporating metal on the surface of the film with the functional coating.
Further, the functional coating is an inorganic oxide coating.
Further, the inorganic oxide coating is Al 2 O 3 AlN or ZnO.
Further, the high-voltage power supply for exciting the low-temperature plasma and generating the low-temperature plasma required by the pretreatment unit is a high-frequency high-voltage alternating-current power supply, a microsecond pulse power supply, a nanosecond pulse power supply, a microwave power supply, a radio frequency power supply or a direct-current power supply.
Further, the working gas of the pretreatment unit is air, argon, nitrogen, helium or neon.
Further, the precursor is trimethyl aluminum, diethyl zinc, triethylamine and water.
Further, the film to be treated is made of a PP film or a high molecular polymer film.
Further, the high molecular polymer film is made of polyimide, polytetrafluoroethylene, polyvinylidene fluoride or polystyrene.
The invention also discloses a processing method of the capacitor film grading processing device, which comprises the following steps:
(1) selecting a capacitor film with certain width and thickness as a film to be processed, and fixing the capacitor film on a winding shaft and an unwinding shaft;
(2) enabling the film to be processed to enter a pretreatment unit, adjusting the speed of a winding shaft and the speed of an unwinding shaft, and selecting a proper speed to enable the film to be processed to pass through the pretreatment unit; the pretreatment unit adopts a flat electrode structure, sets proper discharge voltage, discharge power and treatment time, and performs pretreatment on the film to be treated;
(3) introducing the film to be treated into a functional deposition unit at a certain speed, introducing a precursor, and controlling the deposition cycle number to ensure that a compact and uniform functional coating is formed on the surface of the film to be treated by deposition;
(4) and introducing the treated film into a film metallization unit, and evaporating metal on the surface of the film.
Has the advantages that:
the invention combines the discharge plasma surface treatment technology and the ALD technology to deposit the functional layer on the film substrate and carry out surface modification on the deposition interface, thereby improving the interface defect, improving the breakdown field intensity threshold of the metalized film and improving the isolation self-healing performance of the metalized film. The invention aims at the key link of the existing film preparation, introduces the links of pretreatment and functional deposition, has the advantages of simple device structure, convenient operation, continuous grading and the like, and is suitable for large-scale industrial production and application.
Drawings
FIG. 1 is a schematic view of a capacitor film stage processing apparatus according to the present invention.
The reference numbers in the figures are: 1-unwinding shaft, 2-film to be processed, 3-pretreatment unit, 4-functional deposition unit, 5-film metallization unit and 6-winding shaft.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and do not limit the invention. In addition, the technical features involved in the embodiments of the present invention described below may be combined with each other as long as they do not conflict with each other.
As shown in fig. 1, the capacitor film classification processing apparatus of the present invention includes an unwinding shaft 1, a pretreatment unit 3, a functional deposition unit 4, a film metallization unit 5, and a winding shaft 6.
The pretreatment unit 3 is composed of an upper electrode plate and a lower electrode plate, adopts a Dielectric Barrier Discharge (DBD) mode, applies high voltage between the upper electrode plate and the lower electrode plate, utilizes a high-voltage power supply to excite working gas to generate low-temperature plasma, treats the surface of the film 2 to be treated, regulates and controls the surface roughness of the film 2 to be treated, and improves the adhesive force of a film substrate. The method utilizes the interaction of the plasma and the film substrate to uniformly regulate and control the roughness of the film substrate. The interaction is primarily a physical etching action.
The functional deposition unit 4 introduces a precursor into the deposition cavity through a gas path by using an ALD (atomic layer deposition) technology, controls the flow, residence time, purging time, deposition cycle times and the like of the precursor, enables the precursor to alternately and circularly enter the deposition cavity through the gas path, deposits a functional coating on the surface of the film 2 to be processed through a self-limiting chemical reaction, inhibits the charge injection of a metal layer to a film substrate material, and improves the breakdown field intensity threshold of a metallized film. The functional coating is mainly an inorganic oxide coating, such as Al 2 O 3 AlN, ZnO, etc.
Neither the pretreatment unit 3 nor the functional deposition unit 4 will cause damage to the body of the thin film material.
The high-voltage power supply generated by exciting the plasma needed by the pretreatment unit 3 can be a high-frequency high-voltage alternating-current power supply, a microsecond pulse power supply, a nanosecond pulse power supply, a microwave power supply, a radio frequency or direct-current power supply and the like.
The working gas required by the pretreatment unit 3 can be air, argon, nitrogen, helium, neon and the like.
The precursor required for the functional deposition unit 4 may be trimethyl aluminum, diethyl zinc, triethyl amine, water, etc.
The discharge form of the low-temperature plasma is not limited to corona discharge, and forms such as dispersion discharge, sliding arc discharge, atmospheric pressure dielectric barrier discharge and the like can be used.
The material of the film 2 to be treated is not only a polypropylene film (PP), but also a plurality of high molecular polymer films, such as Polyimide (PI), Polytetrafluoroethylene (PTFE), polyvinylidene fluoride (PVDF), Polystyrene (PS) and the like.
The working process of the invention is as follows: firstly, a film 2 to be processed is pretreated by low-temperature plasma generated by Dielectric Barrier Discharge (DBD) in a specific atmosphere, the surface roughness of the film is homogenized, and the bonding force between a metal layer and the film is increased. Then, selecting a proper precursor and a proper reactive gas, constructing a reaction environment with adjustable element proportion, reaction rate and active particle flux by utilizing an Atomic Layer Deposition (ALD) technology, constructing a nano functional layer on the surface of the film, inhibiting the charge injection of a metal layer to a film material, improving the breakdown field intensity threshold of the metalized film, and improving the isolation self-healing performance of the metalized film.
Specifically, the processing method of the capacitor film grading processing device comprises the following steps:
(1) the film 2 to be treated is prepared. And selecting a capacitor film with certain width and thickness as a film to be processed, and fixing the film to the winding shaft 6 and the unwinding shaft 1.
(2) Into the plasma pre-treatment unit 3. And adjusting the speed of the winding shaft 6 and the unwinding shaft 1, and selecting a proper speed to enable the film 2 to be processed to pass through the pretreatment unit 3. The pretreatment unit 3 adopts a flat electrode structure, sets appropriate discharge voltage, discharge power and treatment time, and performs pretreatment on the film 2 to be treated.
(3) Into the functional deposition unit 4. The film 2 to be treated is introduced into the functional deposition unit at a certain speed. And (3) introducing a specific precursor, and controlling the deposition cycle number to ensure that a compact and uniform deposition coating is formed on the surface of the film 2 to be treated.
(4) And finally, introducing the processed film into a film metallization unit 5 to finish metal evaporation on the surface of the film.
The following examples are given with BOPP films:
selecting a BOPP film roll with the width of 120mm and the thickness of 15 mu m, placing the BOPP film to be processed on a unreeling shaft 1, controlling the BOPP film to sequentially enter a pretreatment unit 3, a functional deposition unit 4 and a film metallization unit 5 at a certain speed, and finishing the processing process. The BOPP film is a biaxially oriented polypropylene film.
It will be understood by those skilled in the art that the foregoing is only a preferred embodiment of the present invention, and is not intended to limit the invention, and that any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the scope of the present invention.
Claims (9)
1. A capacitor film grading treatment device is characterized in that: the device comprises an unwinding shaft, a pretreatment unit, a functional deposition unit, a thin film metallization unit and a winding shaft; the unwinding shaft and the winding shaft are used for fixing a film to be processed; the pretreatment unit is composed of an upper electrode plate and a lower electrode plate, adopts a dielectric barrier discharge mode, applies high voltage between the upper electrode plate and the lower electrode plate, and excites working gas to generate low-temperature plasma; the functional deposition unit deposits a functional coating on the surface of the film to be processed by introducing a precursor by utilizing an atomic layer deposition method; the film metallization unit is used for evaporating metal on the surface of the film with the functional coating.
2. The capacitor film classification processing apparatus as claimed in claim 1, wherein: the functional coating is an inorganic oxide coating.
3. The capacitor film classification processing apparatus as claimed in claim 2, wherein: the inorganic oxide coating is Al 2 O 3 AlN or ZnO.
4. The capacitor film classification processing apparatus as claimed in claim 1, wherein: the high-voltage power supply for exciting the low-temperature plasma and generating the low-temperature plasma required by the pretreatment unit is a high-frequency high-voltage alternating-current power supply, a microsecond pulse power supply, a nanosecond pulse power supply, a microwave power supply, a radio frequency or direct-current power supply.
5. The capacitor film classification processing apparatus as claimed in claim 1, wherein: the working gas of the pretreatment unit is air, argon, nitrogen, helium or neon.
6. The capacitor film classification processing apparatus as claimed in claim 1, wherein: the precursor is trimethyl aluminum, diethyl zinc, triethylamine and water.
7. The capacitor film grading processing device according to claim 1, wherein: the film to be treated is made of a PP film or a high molecular polymer film.
8. The capacitor film classification processing apparatus as claimed in claim 7, wherein: the high molecular polymer film is made of polyimide, polytetrafluoroethylene, polyvinylidene fluoride or polystyrene.
9. The processing method of the capacitor film classification processing device according to one of claims 1 to 8, characterized by comprising the steps of:
(1) selecting a capacitor film with certain width and thickness as a film to be processed, and fixing the capacitor film on a winding shaft and an unwinding shaft;
(2) enabling the film to be processed to enter a pretreatment unit, adjusting the speed of a winding shaft and the speed of an unwinding shaft, and selecting a proper speed to enable the film to be processed to pass through the pretreatment unit; the pretreatment unit adopts a flat electrode structure, sets proper discharge voltage, discharge power and treatment time, and performs pretreatment on the film to be treated;
(3) introducing the film to be treated into a functional deposition unit at a certain speed, introducing a precursor, and controlling the deposition cycle number to ensure that a compact and uniform functional coating is formed on the surface of the film to be treated by deposition;
(4) and introducing the treated film into a film metallization unit, and evaporating metal on the surface of the film.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN116176018A (en) * | 2023-02-23 | 2023-05-30 | 河北海伟电子新材料科技股份有限公司 | Polypropylene capacitor film applied to electronic anti-monitoring tag and preparation method thereof |
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