CN114826225A - Drive circuit system for adjusting conduction speed of semiconductor switch - Google Patents
Drive circuit system for adjusting conduction speed of semiconductor switch Download PDFInfo
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- CN114826225A CN114826225A CN202210490355.8A CN202210490355A CN114826225A CN 114826225 A CN114826225 A CN 114826225A CN 202210490355 A CN202210490355 A CN 202210490355A CN 114826225 A CN114826225 A CN 114826225A
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/04—Modifications for accelerating switching
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M11/00—Power conversion systems not covered by the preceding groups
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/04—Modifications for accelerating switching
- H03K17/041—Modifications for accelerating switching without feedback from the output circuit to the control circuit
- H03K17/04106—Modifications for accelerating switching without feedback from the output circuit to the control circuit in field-effect transistor switches
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
- H03K17/6877—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the control circuit comprising active elements different from those used in the output circuit
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/021—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of more than one type of element or means, e.g. BIMOS, composite devices such as IGBT
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- Electronic Switches (AREA)
Abstract
The invention discloses a driving circuit system for adjusting the conduction speed of a semiconductor switch, which is used for adjusting the conduction speed of a voltage control type semiconductor switch and comprises a driving circuit with adjustable driving voltage, a voltage control circuit and a voltage control circuit, wherein the driving circuit is used for providing driving voltage signals with different amplitudes; the bipolar transistor is connected in series with the output end of the driving circuit and used for adjusting the magnitude of the driving current; the Zener diode and the resistor are connected in series with the base electrode of the transistor to form a closed loop with the driving circuit and control the base electrode current of the transistor; the diode and the resistor are connected in parallel at two ends of a collector and an emitter of the transistor and used for realizing the quick turn-off of the semiconductor switch; and a selective resistance-capacitance branch circuit for expanding the adjusting range of the Miller platform and inhibiting Miller oscillation. The invention controls the magnitude of the driving current by adjusting the amplitude of the driving voltage and the transistor, thereby regulating and controlling the Miller platform time, further controlling the conduction speed of the voltage control type semiconductor switch and realizing the regulation of the conduction speed of the semiconductor switch.
Description
Technical Field
The invention belongs to the technical field of pulse power and power electronics, and particularly relates to a method for adjusting the conduction speed of a voltage control type semiconductor switch.
Background
In recent research, high voltage pulse power sources are increasingly used in the fields of biology, food sterilization, chemical industry, medical treatment, etc., especially in the important excitation source of plasma discharge. Research shows that the edge speed of the high-voltage pulse can obviously influence the electron temperature, the concentration and the like of low-temperature plasma in dielectric barrier discharge. In the magnetron and spiral tube widely used in industry, some pulses with specific edge speed are needed as excitation source, so it is very important to research a driving circuit for arbitrarily adjusting the conduction speed of the semiconductor switch in a certain range and use it as a high-voltage pulse power supply for adjusting the pulse edge.
In the design of the current driving circuit for the semiconductor switch, in order to reduce the switching loss and to increase the conduction speed of the switch as much as possible, the gate resistance is usually changed or the driving current is usually increased to achieve the fast conduction of the semiconductor switch. The circuit for adjusting the conduction speed is few, and is usually realized by changing the resistance of a gate pole, but the technology needs manual replacement or adjustment of the resistance value, cannot realize quick automatic control and adjustment effect, and has small adjustment range and poor adjustment precision.
In the high-voltage pulse power supply, the discharge switching tubes in the plurality of discharge units need to be turned on and off simultaneously, and when the driving speeds of all the discharge tubes need to be adjusted synchronously when the edge of the high-voltage pulse power supply is adjusted, all the modes of manually adjusting the driving resistance or the driving voltage hardly ensure that the driving speeds of the discharge switching tubes of different units are constant, so that the practicability is poor. In the edge adjusting method for the Marx-structured pulse power supply, the opening starting time of each stage of switching tube is delayed by a fixed time delay mainly by adjusting the opening time sequence of the discharge tube, so that pulses output by different stages are overlapped in a staggered mode, the slope of the pulse edge is changed, and the adjustment of the output pulse edge can be realized only by changing the time delay. The edge slope of the pulse source with the Marx structure can be adjusted by utilizing the delayed conduction of the discharge switching tubes of different units, but the adjustment range of the method is limited in consideration of the fact that the delay step length is matched with the switching tube on speed, the edge waveform still has steps and is not smooth enough, and the switching tube of each stage needs an independent signal to generate delay, which is not favorable for the application in a high-voltage pulse power supply with many stages.
Disclosure of Invention
The purpose of the invention is as follows: the invention aims to solve the defects in the prior art, and provides a driving circuit system capable of continuously adjusting the conduction speed of a semiconductor switch, which can be used for adjusting the pulse edge of a high-voltage pulse power supply.
The technical scheme is as follows: the invention provides a driving circuit system for adjusting the conduction speed of a semiconductor switch, which is used for controlling the conduction speed of a voltage control type semiconductor switch and comprises:
the driving circuit is used for generating a driving voltage signal with adjustable driving voltage amplitude Vcc;
a PNP bipolar transistor having an emitter connected to the positive output terminal P + of the driving circuit and a collector connected to the gate or gate of the driven semiconductor switch S for providing an appropriate driving current;
the base resistor is connected in series with the base of the PNP bipolar transistor and used for generating proper base current;
a Zener diode, the cathode of which is connected with the base resistor in series, and the anode of which is connected with the negative polarity output end P-of the driving circuit, and is used for generating a proper driving voltage threshold value;
the diode and the resistor are connected in series with the branch circuit and are connected with the collector and the emitter of the PNP bipolar transistor in an anti-parallel mode, and the cathode of the diode is connected with the emitter of the PNP bipolar transistor;
the drive circuit, the emitter of the PNP bipolar transistor, the base resistor and the Zener diode form a series loop, and when the amplitude of the drive voltage changes, the drive current also changes;
the driving circuit, the emitter and the collector of the PNP bipolar transistor and the control pin of the driven semiconductor switch S form a series circuit to generate driving voltage with adjustable rising edge.
Furthermore, the base resistor and the Zener diode can be exchanged as long as they satisfy the series relation.
Further, the diode and the resistor which are connected in parallel between the collector and the emitter of the PNP bipolar transistor only need to satisfy the series relation, and the positions of the diode and the resistor can be exchanged.
Furthermore, the amplitude of the driving voltage output by the driving circuit is adjustable, and the driving current and the conduction speed of the semiconductor switch S are adjusted by directly providing adjustable power supply voltage for the driving chip or directly generating driving voltage signals with different amplitudes.
Further, a resistor-capacitor series branch is connected between the gate and the drain or between the gate and the collector of the driven semiconductor switch S.
The invention also discloses another driving circuit system for adjusting the conduction speed of the semiconductor switch, which is used for controlling the conduction speed of the voltage control type semiconductor switch and comprises the following components:
the driving circuit is used for generating a driving voltage signal with adjustable driving voltage amplitude Vcc;
an NPN bipolar transistor, the collector of which is connected with the negative polarity output end P-of the driving circuit, and the emitter of which is connected with the source electrode or the emitter of the driven semiconductor switch, and is used for providing proper driving current;
a base resistor connected in series with the base of the NPN bipolar transistor and used for generating proper base current;
a Zener diode, the anode of which is connected with the base resistor in series, and the cathode of which is connected with the positive polarity output end P + of the driving circuit, and is used for generating a proper driving voltage threshold value;
the diode and the resistor series branch circuit are connected with the collector and the emitter of the NPN bipolar transistor in an anti-parallel mode, and the cathode of the diode is connected with the collector of the NPN bipolar transistor;
the driving circuit, the emitter and the base of the NPN bipolar transistor, the base resistor and the Zener diode form a series circuit, and when the amplitude of the driving voltage changes, the driving current also changes;
the driving circuit, the emitter and the collector of the NPN bipolar transistor and the control pin of the driven semiconductor switch form a series circuit to generate driving voltage with adjustable rising edge.
Furthermore, the base resistor and the Zener diode can be exchanged as long as they satisfy the series relation.
Further, the diode and the resistor connected in parallel between the collector and the emitter of the NPN bipolar transistor may be connected in series, and their positions may be reversed.
Furthermore, the amplitude of the driving voltage output by the driving circuit is adjustable, and the driving current and the conduction speed of the semiconductor switch S are adjusted by directly providing adjustable power supply voltage for the driving chip or directly generating driving voltage signals with different amplitudes.
Further, a resistor-capacitor series branch is connected between the gate and the drain or between the gate and the collector of the driven semiconductor switch S.
The two operating modes of the driving circuit system for adjusting the turn-on speed of the semiconductor switch include a turn-on mode and a turn-off mode, and the driving MOSFET is taken as an example and described in detail below.
Conduction mode: in the on mode, there are mainly three phases: a start-up phase, a miller plateau phase and a conduction phase.
A starting stage: when the driver outputs a turn-on signal, the voltage mainly falls on the Zener diode, resulting in the Zener diode Z 1 Breakdown, then the base current rises rapidly to a voltage of excess and resistance R b And determining a stable value, wherein the triode works in an amplification region. U following S gs Lifting, U ce Gradually decrease when U gs Up to a Miller plateau voltage U pl While, U of S ds Begins to fall and gradually conducts.
A Miller platform stage: gate voltage U of S gs Is kept constant while the drive current I is maintained c Is C e Branch charging, U of MOSFET during Miller stage ds Gradually decreases to 0 and S is completely turned on. Resistance R e Over-current is suppressed, and Miller oscillation is avoided, so that the edge of the output pulse is distorted. At different drive voltages, the period T of the Miller stage 1 Output current I of c There is a large difference, so the time passing through the Miller platform is obviously different when V is cc When increasing, the drive current increases, S passes through the Miller stage for a shorter time, U ds Becomes larger and vice versa.
And (3) conducting stage: when S is completely turned on, the S gate level voltage has reached V cc ，T 1 Working in saturation region, the output current is close to 0, and the triode T is enabled 1 Operating in a low power state for a longer period of time on. Due to U ds Falls to 0 when turned on, and the auxiliary capacitor C e Upper voltage is V dd 。
An off mode: when the switch tube S is turned off, in order to ensure stable and rapid turn-off of the S, the driving voltage is set to be a negative value, and at the moment, the triode T 1 U of (1) be The negative pressure is in the off state, and the diode D is bypassed 1 The current flows through the bypass resistor R when the current is turned on under positive pressure 1 Turn off, set a smaller off resistance R 1 To counteract the increase C e The resulting effect increases the turn-off speed of the switching tube S.
Has the advantages that: the invention controls the magnitude of the driving current by adjusting the amplitude of the driving voltage and the transistor, thereby regulating and controlling the Miller platform time, further controlling the conduction speed of the voltage control type semiconductor switch and realizing the regulation of the conduction speed of the semiconductor switch.
Drawings
Fig. 1 is a schematic circuit diagram of a driving circuit according to an embodiment of the present invention;
FIG. 2 is a phase relationship of a switching tube voltage drop to a drive signal in accordance with an embodiment of the present invention;
FIG. 3 shows an embodiment of the present inventionExamples of t 0 ~t 2 A starting phase schematic diagram of a conduction mode;
FIG. 4 shows an embodiment of the present invention, t 2 ~t 3 A Miller platform phase schematic diagram of the conduction mode;
FIG. 5 shows an embodiment of the present invention, t 3 ~t 4 A conduction phase schematic diagram of a conduction mode;
FIG. 6 shows an embodiment of the present invention, t 5 ~t 7 Schematic diagram of the off mode;
FIG. 7 is a graph of charge and discharge switching signals versus output pulses in accordance with an embodiment of the present invention;
fig. 8 is a schematic circuit diagram of a driving circuit according to another embodiment of the present invention.
Detailed Description
The technical solutions of the present invention will be described clearly and completely with reference to the accompanying drawings, and it should be understood that the described embodiments are some, but not all embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "inner", "outer", etc. indicate orientations or positional relationships shown only for convenience of description and simplification of description, but do not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and thus, should not be construed as limiting the present invention.
In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
The present invention will be described in further detail below with reference to specific embodiments and with reference to the attached drawings.
Example 1
As shown in FIG. 1, a schematic circuit diagram of a driving circuit system for adjusting the conduction speed of a semiconductor switch comprises a driving voltage circuit and a PNP bipolar transistor T 1 Zener diode Z 1 And base resistance R b Diode D 1 And a resistance R 1 The driving voltage circuit is used for generating a voltage signal for conducting the MOSFET switch tube S, the PNP bipolar transistor is used for controlling the on-off speed of the MOSFET switch tube S, and the Zener diode and the resistor R b For determining the base current of the transistor, said diode D 1 And a resistance R 1 To achieve fast turn-off of the MOSFET switch S.
As shown in FIG. 1, the positive polarity output terminal P + of the driving voltage circuit and the PNP bipolar transistor T 1 Emitter and diode D 1 Is connected with the cathode of the MOSFET switch tube S, the negative polarity output end P-is connected with the source electrode of the MOSFET switch tube S and the Zener diode Z 1 The positive electrodes of (a) and (b) are connected. PNP bipolar transistor T 1 Base and base resistor R b One end is connected with the collector and the resistor R 1 And the grid of the switching tube S is connected; the base electrode resistor R b The other end and a Zener diode Z 1 Cathode connected to PNP bipolar transistor T 1 The base electrodes are connected; the diode D 1 Positive electrode and resistor R 1 Connected to a diode D 1 Cathode and positive polarity output end P + of drive circuit and PNP bipolar transistor T 1 The emitting electrodes of the two-way light-emitting diode are connected; the resistor R 1 One terminal and a diode D 1 The anode is connected with the PNP bipolar transistor T 1 The collector is connected to the gate of the switching tube S.
Example 2
As shown in FIG. 1, a schematic circuit diagram of a driving circuit system for adjusting the conduction speed of a semiconductor switch comprises a driving voltage circuit and a PNP bipolar transistor T 1 Zener diode Z 1 And base resistance R b Diode D 1 And a resistance R 1 RC resistance-capacitance branch (R) e And C e ) The driving voltage circuit is used for generating a voltage signal for conducting the MOSFET switch tube S, the PNP bipolar transistor is used for controlling the on-off speed of the MOSFET switch tube S, and the Zener diode and the resistor R b For determining the base current of the transistor, said diode D 1 And a resistance R 1 The device is used for realizing the rapid turn-off of the MOSFET switching tube S; the RC resistance-capacitance branch is used for increasing the longest time of the Miller platform and inhibiting Miller oscillation.
As shown in FIG. 1, the positive polarity output terminal P + of the driving voltage circuit and the PNP bipolar transistor T 1 Emitter and diode D 1 Is connected with the cathode of the MOSFET switch tube S, the negative polarity output end P-is connected with the source of the MOSFET switch tube S and the Zener diode Z 1 The positive electrodes of (a) and (b) are connected. PNP bipolar transistor T 1 Base and base resistor R b One end is connected with the collector and the resistor R 1 And the grid of the switching tube S is connected; the base electrode resistor R b The other end and a Zener diode Z 1 Cathode connected to PNP bipolar transistor T 1 The base electrodes are connected; the diode D 1 Positive electrode and resistor R 1 Connected, diode D 1 Cathode and positive polarity output end P + of drive circuit and PNP bipolar transistor T 1 The emitting electrodes are connected; the resistor R 1 One terminal and a diode D 1 The anode is connected with the PNP bipolar transistor T 1 The collector is connected to the gate of the switching tube S.
In this embodiment, the Zener diode Z 1 And base resistance R b As long as the series relationship is satisfied, their positions can be reversed. I.e. a PNP bipolar transistor T 1 May be connected with a zener diode Z 1 Is connected to the cathode of a Zener diode Z 1 Anode and base resistor R of b One end is connected with ， Base resistance R b And the other end of the same is connected with the negative polarity output end P-of the drive circuit.
In this embodiment, the PNP bipolar transistor is connected in parallelDiode D between collector and emitter of type transistor 1 And a resistance R 1 The positions can be exchanged as long as the series relation is satisfied, and the principle is the same.
In this embodiment, as shown in fig. 1, the driving voltage circuit is used to generate a voltage amplitude V for turning on the MOSFET switch tube S cc The adjustable drive signal, in this embodiment a magnetically isolated drive, is used to provide the drive signal with a negative voltage bias. In practice, an adjustable supply voltage V may also be used cc The power module supplies power to the driving circuit of the driving chip.
In this embodiment, as shown in fig. 1, the RC branch specifically includes a resistor R connected in parallel between the gate and the drain of the switching tube S e And a capacitor C e 。R e For suppressing Miller oscillations; c e For expanding the adjustment range of the on-time.
Fig. 2 is a time phase relationship of a pulse edge and a drive signal in an embodiment of the present invention.
Fig. 3 is a start-up phase of the conduction mode in an embodiment of the invention.
The drive circuit is at t 0 When the conducting signal is output at any moment, the voltage mainly falls on the Zener diode Z 1 Above, lead to Z 1 The zener breaks down. Then base current I b Rises rapidly to a voltage level comprised of the residual voltage and the resistance R b The determined steady state value. T is 1 Operating in an amplified state. Base current I b Is linearly amplified, collector current I c The current flows into the gate of the switching tube S to charge the equivalent capacitance inside the gate-source. Gate source voltage U gs From negative bias voltage U dn At the beginning of the increase, drain-source voltage U ds Remains unchanged until t 1 Time U gs Rise to threshold voltage U of switching tube S gs(th) The switching tube S starts to conduct. t is t 1 Rear U ds Begins to slowly fall, U gs Continuously rising to the Miller plateau voltage U pl . Starting period at t 2 The time is over.
FIG. 4 shows the Miller plateau phase of the conduction mode in an embodiment of the invention.
Grid of switch tube SPole voltage U gs Is kept constant, t 2 ~t 3 During which it is in the region of the miller plateau. This period is called the miller plateau. T is 1 Still operating in an amplified state, collector current I c In agreement with the start. During this period, the collector current I c Capacitance mainly flowing between the gate and drain, drain-source voltage U ds Steady state value U from off state dd Steady state value U to go to on state dson The linearity decreases. This miller plateau is the dominant period of the conduction speed regulation of the switching tube S. U shape ds The linear decrease ensures that the pulse edges are smooth enough and no step wave occurs. Obviously, the equivalent gate-drain capacitance C e The larger the range of modulation of the pulse edge. In the actual driving circuit, the equivalent gate-drain capacitance C of the MOSFET gd Low, miller plateau times are typically in the hundreds of nanoseconds, so U ds Fall time T of fu Has a limited adjustment range. Furthermore, when T is fu Very short times, overshoot and oscillation occur. To solve this problem, an RC-branch (R in series) e And C e ) Connected in parallel between the gate and the drain. C e Increase the equivalent gate-drain capacitance, R e Overshoot and oscillation are limited. With this RC branch, the miller platform time can be adjusted from tens of nanoseconds to tens of microseconds or even longer. By reducing the amplitude V of the drive voltage cc , I b And I c Will decrease U ds The rate of decrease in (c) also decreases. Therefore, it is possible to control the driving voltage amplitude V cc To adjust the conduction speed of the semiconductor switch S. In addition, due to the transistor T 1 Working in active mode during the Miller plateau phase, collector current I c Is equal to the amplification factor (beta) multiplied by the base current I b . By varying R b And Z 1 To increase I b The adjustment range of (2) also contributes to the expansion of the adjustment range of the conduction speed of the semiconductor switch.
Fig. 5 is a conduction phase of the conduction mode in an embodiment of the present invention.
At t 3 ~t 4 Period, T 1 Collector current I of c Grid of the main inflow switching tube SSource electrode, U gs During this period, the power supply is turned off by U pl Linear up to V cc . At t 4 ~t 5 While, PNP transistor T 1 Operating in saturation mode. At this time collector current I c Almost zero, gate source voltage U gs And remain constant. The MOSFET S is fully conducting.
Fig. 6 is an off mode in an embodiment of the invention.
At t 5 ~t 7 During this time, when the driver outputs a negative signal, the MOSFET S operates in the off mode. In this period the PNP transistor T 1 Operating in reverse active mode. The gate current flows in reverse through the transistor, from the collector to the emitter. This reverse current is usually very low and almost negligible. Most of the reverse current is formed by the resistor R 1 And a backward diode D 1 The composed DR branch circuit flows into the drive circuit to shorten the turn-off time. Gate source voltage U gs Down to negative bias voltage value U dn And held, thereby reliably turning off the switching tube S. Fast turn-off speed helps to reduce switching losses.
FIG. 7 is a timing diagram of the driving signals and the output voltage of the switch tube in the embodiment of the invention.
As shown in fig. 7, when the on-time of the switch tube S is t r On pulse width of t pw The duration of its driving voltage signal should be t r +t pw This ensures that the output pulse has the required pulse width and rising edge.
Example 3
As shown in FIG. 8, another schematic circuit diagram of a driving circuit system for adjusting the turn-on speed of a semiconductor switch includes a driving voltage circuit, an NPN bipolar transistor T 1 Zener diode Z 1 And base resistance R b Diode D 1 And a resistance R 1 RC resistance-capacitance branch (R) e And C e ) The driving voltage circuit is used for generating a voltage signal for conducting the MOSFET switch tube S, and the NPN bipolar transistor T 1 For controlling the on-off speed of the MOSFET switch tube S, the Zener diode Z 1 And a resistance R b For use inDetermining the base current of the transistor, said diode D 1 And a resistance R 1 The device is used for realizing the rapid turn-off of the MOSFET switching tube S; the RC resistance-capacitance branch is used for increasing the longest time of the Miller platform and inhibiting Miller oscillation.
As shown in FIG. 8, the negative polarity output terminal P-and NPN bipolar transistor T of the driving voltage circuit 1 Emitter and resistor R 1 Is connected to the positive output terminal P + and the gate of the MOSFET switch transistor S and the zener diode Z 1 Are connected with each other. NPN bipolar transistor T 1 Base and base resistor R b One end is connected with the collector electrode of the diode D 1 The cathode is connected with the source electrode of the switching tube S; the base electrode resistor R b One terminal and Zener diode Z 1 The anode is connected with NPN bipolar transistor T 1 The base electrodes are connected; the diode D 1 Positive electrode and resistor R 1 Connected, diode D 1 Cathode and source of driving switch tube S and NPN bipolar transistor T 1 The collector electrodes are connected; the resistor R 1 One terminal and a diode D 1 The anode is connected with the NPN bipolar transistor T, and the other end is connected with the NPN bipolar transistor T 1 The emitter is connected with the negative polarity output end P-of the driving circuit.
In this embodiment, the Zener diode Z 1 And base resistance R b As long as the series relationship is satisfied, their positions can be reversed. I.e. NPN bipolar transistor T 1 May be connected with a zener diode Z 1 Is connected to the anode of a Zener diode Z 1 Cathode and base resistance R b One end is connected with ， Base resistance R b And the other end of the same is connected with the positive polarity output end P + of the driving circuit.
In this embodiment, the NPN bipolar transistor T is connected in parallel 1 Between collector and emitter of (2) 1 And a resistance R 1 The positions can be exchanged as long as the series relation is satisfied, and the principle is the same.
In this embodiment, as shown in fig. 8, the driving voltage circuit is used to generate the voltage amplitude V for turning on the MOSFET switch tube S cc Adjustable drive signal, the present embodimentIn the example, a magnetically isolated drive is used to provide the drive signal with a negative voltage bias. In practice, an adjustable supply voltage V may also be used cc The power module supplies power to the driving circuit of the driving chip.
In this embodiment, as shown in fig. 8, the RC branch specifically includes a resistor R connected in parallel between the gate and the drain of the switching tube S e And a capacitor C e 。R e For suppressing Miller oscillations; c e For expanding the adjustment range of the on-time.
According to the driving circuit system scheme for controlling the driving voltage to adjust the conduction speed of the semiconductor switch, the amplitude of the driving voltage is adjusted, so that not only can wide-range edge adjustment be realized, but also the adjustment of the edge of an output pulse is realized compared with the traditional method of changing the time sequence of an opening signal, the complicated signal time sequence and each stage of independent signal driving circuit are omitted, the cost is reduced, the driving voltages of different units in the high-voltage pulse power supply can be kept to be adjusted consistently, the edge of the output pulse is smooth, and the adjustment performance of the high-voltage pulse power supply can be further improved.
Although the present invention has been described with reference to a preferred embodiment, it should be understood that various changes, substitutions and alterations can be made herein without departing from the spirit and scope of the invention as defined by the appended claims.
Claims (10)
1. A drive circuit system for adjusting the conduction speed of a semiconductor switch is characterized in that: the drive circuit system is used for controlling the conduction speed of a voltage control type semiconductor switch, and comprises:
the driving circuit is used for generating a driving voltage signal with adjustable driving voltage amplitude Vcc;
a PNP bipolar transistor, the emitter of which is connected with the positive polarity output end P + of the driving circuit, and the collector of which is connected with the gate or grid of the driven semiconductor switch, and is used for providing proper driving current;
the base resistor is connected in series with the base of the PNP bipolar transistor and used for generating proper base current;
a Zener diode, the cathode of which is connected with the base resistor in series, and the anode of which is connected with the negative polarity output end P-of the driving circuit, and is used for generating a proper driving voltage threshold value;
the diode and the resistor are connected in series with the branch circuit and are connected with the collector and the emitter of the PNP bipolar transistor in an anti-parallel mode, and the cathode of the diode is connected with the emitter of the PNP bipolar transistor;
the drive circuit, the emitter of the PNP bipolar transistor, the base resistor and the Zener diode form a series loop, and when the amplitude of the drive voltage changes, the drive current also changes;
the drive circuit, the emitter and the collector of the PNP bipolar transistor and the control pin of the driven semiconductor switch form a series circuit to generate drive voltage with adjustable rising edge.
2. The driving circuit system for regulating the conduction speed of a semiconductor switch according to claim 1, wherein: the base resistor and the Zener diode can be connected in series, and the positions of the base resistor and the Zener diode can be exchanged.
3. The driving circuit system for regulating the conduction speed of a semiconductor switch according to claim 1, wherein: the diode and the resistor which are connected in parallel between the collector and the emitter of the PNP bipolar transistor only need to satisfy the series relation, and the positions of the diode and the resistor can be exchanged.
4. The driving circuit system for regulating the conduction speed of a semiconductor switch according to any one of claims 1 to 3, wherein: the amplitude of the driving voltage output by the driving circuit is adjustable, and the driving circuit is used for adjusting the driving current and the conduction speed of the semiconductor switch by directly providing adjustable power supply voltage for the driving chip or directly generating driving voltage signals with different amplitudes.
5. The driving circuit system for regulating the conduction speed of a semiconductor switch according to any one of claims 1 to 3, wherein: a resistance-capacitance series branch is connected between the grid and the drain or between the grid and the collector of the driven semiconductor switch.
6. A drive circuit system for adjusting the conduction speed of a semiconductor switch is characterized in that: the drive circuit system is used for controlling the conduction speed of a voltage control type semiconductor switch, and comprises:
the driving circuit is used for generating a driving voltage signal with adjustable driving voltage amplitude Vcc;
an NPN bipolar transistor, the collector of which is connected with the negative polarity output end P-of the driving circuit, and the emitter of which is connected with the source electrode or the emitter of the driven semiconductor switch, and is used for providing proper driving current;
a base resistor connected in series with the base of the NPN bipolar transistor and used for generating proper base current;
a Zener diode, the anode of which is connected with the base resistor in series, and the cathode of which is connected with the positive polarity output end P + of the driving circuit, and is used for generating a proper driving voltage threshold value;
the diode and the resistor series branch are connected with the collector and the emitter of the NPN bipolar transistor in an anti-parallel mode, and the cathode of the diode is connected with the collector of the NPN bipolar transistor;
the driving circuit, the emitter and the base of the NPN bipolar transistor, the base resistor and the Zener diode form a series circuit, and when the amplitude of the driving voltage changes, the driving current also changes;
the driving circuit, the emitter and the collector of the NPN bipolar transistor and the control pin of the driven semiconductor switch form a series circuit to generate driving voltage with adjustable rising edge.
7. The driving circuit system for regulating the conduction speed of a semiconductor switch according to claim 6, wherein: the base resistor and the Zener diode can be connected in series, and the positions of the base resistor and the Zener diode can be exchanged.
8. The driving circuit system for regulating the conduction speed of a semiconductor switch according to claim 6, wherein: the diode and the resistor connected in parallel between the collector and the emitter of the NPN bipolar transistor can be reversed in position as long as they satisfy the series relationship.
9. The driving circuit system for adjusting the turn-on speed of a semiconductor switch according to any one of claims 6-8, wherein: the amplitude of the driving voltage output by the driving circuit is adjustable, and the driving circuit is used for adjusting the driving current and the conduction speed of the semiconductor switch by directly providing adjustable power supply voltage for the driving chip or directly generating driving voltage signals with different amplitudes.
10. The driving circuit system for adjusting the turn-on speed of a semiconductor switch according to any one of claims 6-8, wherein: a resistance-capacitance series branch is connected between the grid and the drain or between the grid and the collector of the driven semiconductor switch.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210490355.8A CN114826225A (en) | 2022-05-07 | 2022-05-07 | Drive circuit system for adjusting conduction speed of semiconductor switch |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210490355.8A CN114826225A (en) | 2022-05-07 | 2022-05-07 | Drive circuit system for adjusting conduction speed of semiconductor switch |
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| CN114826225A true CN114826225A (en) | 2022-07-29 |
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| CN202210490355.8A Pending CN114826225A (en) | 2022-05-07 | 2022-05-07 | Drive circuit system for adjusting conduction speed of semiconductor switch |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115528892A (en) * | 2022-11-28 | 2022-12-27 | 上海芯龙半导体技术股份有限公司 | NMOS power tube driving circuit, chip and system |
| WO2024088137A1 (en) * | 2022-10-25 | 2024-05-02 | 加特兰微电子科技(上海)有限公司 | Charge pump, phase-locked loop, radar sensor, and electronic device |
-
2022
- 2022-05-07 CN CN202210490355.8A patent/CN114826225A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2024088137A1 (en) * | 2022-10-25 | 2024-05-02 | 加特兰微电子科技(上海)有限公司 | Charge pump, phase-locked loop, radar sensor, and electronic device |
| CN115528892A (en) * | 2022-11-28 | 2022-12-27 | 上海芯龙半导体技术股份有限公司 | NMOS power tube driving circuit, chip and system |
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