CN114823993A - Ultraviolet light emitting diode epitaxial wafer preparation method for improving hole quantity and epitaxial wafer - Google Patents
Ultraviolet light emitting diode epitaxial wafer preparation method for improving hole quantity and epitaxial wafer Download PDFInfo
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
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Abstract
The disclosure provides a preparation method of an ultraviolet light-emitting diode epitaxial wafer for improving the hole quantity and an epitaxial wafer, and belongs to the technical field of semiconductor devices. And periodically growing an AlGaN composite layer on the active layer to obtain a P-type AlGaN layer, wherein the AlGaN composite layer comprises an AlGaN three-dimensional sublayer, an AlGaN covering sublayer and an AlGaN processing sublayer which are sequentially stacked. Reducing internal stress and defects. More Mg elements can be more easily doped into the AlGaN three-dimensional sub-layer rich in nitrogen elements, so that the hole quantity is increased. The distribution of Al atoms and Ga atoms in a low-nitrogen environment is more uniform, and the crystal quality of the finally obtained AlGaN composite layer is ensured. And finally, only introducing ammonia gas into the reaction cavity to grow the AlGaN treatment sublayer. The finally obtained P-type AlGaN layer can provide a large number of holes, and the crystal quality of the finally obtained P-type AlGaN layer is ensured.
Description
Technical Field
The disclosure relates to the technical field of semiconductor devices, in particular to a preparation method of an ultraviolet light emitting diode epitaxial wafer for improving the hole quantity and the epitaxial wafer.
Background
With the development of the application of the light emitting diode, the market demand of the ultraviolet light emitting diode is larger and larger, and the ultraviolet light emitting diode with the light emitting wavelength covering 210 and 400nm has incomparable advantages compared with the traditional ultraviolet light source. Ultraviolet light emitting diodes are commonly used in lighting, biomedical, anti-counterfeiting identification, air, water purification, biochemical detection, high-density information storage, and the like. The ultraviolet light emitting diode epitaxial wafer is a basis for preparing the ultraviolet light emitting diode, and comprises a substrate, an N-type AlGaN layer, an active layer and a P-type AlGaN layer which are sequentially stacked on the substrate.
Because the forbidden bandwidth of the AlGaN material is larger, the donor/acceptor energy level between band gaps is deepened, the ionization energy of a dopant is increased, and the activation rate and the carrier concentration of a doping element are low. And the activation energy of the Mg acceptor doped in the P-type AlGaN layer is higher and can reach 500-600meV, which causes that the activation rate of Mg in the P-type AlGaN layer is very low, and the very low activation rate of Mg directly influences the cavity amount in the P-type AlGaN layer, thus causing that the luminous efficiency of the obtained ultraviolet light-emitting diode is lower.
Disclosure of Invention
The embodiment of the disclosure provides a preparation method of an ultraviolet light emitting diode epitaxial wafer for improving the cavity quantity and an epitaxial wafer, which can improve the cavity quantity to improve the light extraction efficiency of the obtained ultraviolet light emitting diode epitaxial wafer. The technical scheme is as follows:
the embodiment of the disclosure provides a preparation method of an ultraviolet light emitting diode epitaxial wafer for improving the cavity quantity, which comprises the following steps:
providing a substrate;
sequentially growing an N-type AlGaN layer and an active layer on the substrate;
periodically growing an AlGaN composite layer on the active layer to obtain a P-type AlGaN layer, wherein the AlGaN composite layer comprises an AlGaN three-dimensional sublayer, an AlGaN covering sublayer and an AlGaN processing sublayer which are sequentially stacked, and the AlGaN three-dimensional sublayer comprises a plurality of AlGaN island-shaped structures stacked on the N-type AlGaN layer or stacked on the AlGaN composite layer;
the growing the AlGaN composite layer includes:
introducing ammonia gas, a Ga source, an Al source and a Mg source into the reaction cavity to grow the AlGaN three-dimensional sublayer, wherein the flow ratio of the ammonia gas to the Ga source is 1000-fold and the flow ratio of the ammonia gas to the Al source is 500-fold 1000-fold;
introducing ammonia gas, a Ga source, an Al source and a Mg source into the reaction cavity to grow the AlGaN covering sublayer, wherein the flow ratio of the ammonia gas to the Ga source is 100-200, and the flow ratio of the ammonia gas to the Al source is 50-100;
and introducing only ammonia gas into the reaction cavity to grow the AlGaN treatment sublayer.
Optionally, when the AlGaN three-dimensional sublayer grows, ammonia gas with the flow rate of 100-200slm, a Ga source with the flow rate of 0.05-0.2slm and an Al source with the flow rate of 0.1-0.4slm are respectively introduced into the reaction cavity.
Optionally, when the AlGaN cap sublayer is grown, ammonia gas with a flow rate of 10to 20slm, a Ga source with a flow rate of 0.05 to 0.2slm, and an Al source with a flow rate of 0.1 to 0.4slm are respectively introduced into the reaction chamber.
Optionally, the thickness of the AlGaN three-dimensional sublayer is less than or equal to the thickness of the AlGaN covering sublayer, and the thickness of the AlGaN three-dimensional sublayer is greater than the thickness of the AlGaN processing sublayer.
Optionally, the thickness of the AlGaN three-dimensional sublayer is 50to 100nm, the thickness of the AlGaN covering sublayer is 50to 100nm, and the thickness of the AlGaN processing sublayer is 10to 30 nm.
Optionally, the growth time of the AlGaN treatment sublayer is 30-50 s.
Optionally, the growth temperature and the growth pressure of the AlGaN three-dimensional sublayer are respectively equal to the growth temperature and the growth pressure of the AlGaN covering sublayer.
Optionally, the growth temperature and growth pressure of the AlGaN three-dimensional sublayer are 850-1050 ℃ and 100-200Torr, respectively.
Optionally, the flow of the Mg source introduced during the growth of the AlGaN three-dimensional sublayer is greater than the flow of the Mg source introduced during the growth of the AlGaN covering sublayer.
The embodiment of the disclosure provides an ultraviolet light emitting diode epitaxial wafer for improving the amount of holes, which is prepared by the ultraviolet light emitting diode epitaxial wafer for improving the amount of holes according to the preparation method, the ultraviolet light emitting diode epitaxial wafer for improving the amount of holes comprises a substrate, and an N-type AlGaN layer, an active layer and a P-type AlGaN layer which are sequentially stacked on the substrate, wherein the P-type AlGaN layer comprises periodically stacked AlGaN composite layers, and each AlGaN composite layer comprises an AlGaN three-dimensional sublayer, an AlGaN covering sublayer and an AlGaN processing sublayer which are sequentially stacked.
The beneficial effects brought by the technical scheme provided by the embodiment of the disclosure include:
and periodically growing an AlGaN composite layer on the active layer to obtain a P-type AlGaN layer, wherein the AlGaN composite layer comprises an AlGaN three-dimensional sublayer, an AlGaN covering sublayer and an AlGaN processing sublayer which are sequentially stacked. The P-type AlGaN layer is of a periodically-laminated structure, so that the stress release of the P-type AlGaN layer is facilitated, the internal stress and strain of the P-type AlGaN layer are reduced to reduce defects and improve the crystal quality of the obtained P-type AlGaN layer, and the reduction of the defects can promote the movement of holes and reduce the probability of the holes being captured by the defects. And in the process of growing the AlGaN three-dimensional sublayer of the AlGaN composite layer, introducing ammonia gas, a Ga source, an Al source and a Mg source into the reaction cavity to grow the AlGaN three-dimensional sublayer, wherein the flow ratio of the ammonia gas to the Ga source is 1000-plus-2000, and the flow ratio of the ammonia gas to the Al source is 500-plus-1000, so that the AlGaN three-dimensional sublayer which is rich in nitrogen elements and comprises a plurality of AlGaN island-shaped structures stacked on the N-type AlGaN layer or stacked on the AlGaN composite layer can be obtained. The AlGaN three-dimensional sub-layer exists in an island structure, and more Mg elements can be more easily doped into the surface of the AlGaN three-dimensional sub-layer, so that the doping of Mg is promoted to increase the quantity of holes available at the bottom of the P-type AlGaN layer. And further growing an AlGaN covering sublayer on the AlGaN three-dimensional layer, wherein the flow ratio of ammonia to the Ga source is 100-200 in the growing process of the AlGaN covering sublayer, and the flow ratio of the ammonia to the Al source is 50-100. On one hand, defects caused by doping of a large amount of Mg can be effectively reduced, on the other hand, in a low-nitrogen environment, viscosity of ammonia gas to Al atoms and Ga atoms is reduced, the Al atoms and the Ga atoms in the AlGaN covering sublayer can reach the optimal nucleation position more easily for stable growth, the Al atoms and the Ga atoms are distributed more uniformly, and the crystal quality of the finally obtained AlGaN composite layer is ensured. And finally, only introducing ammonia gas into the reaction cavity to grow the AlGaN treatment sublayer, wherein the AlGaN treatment sublayer can react with excessive Ga atoms or Al atoms in the reaction cavity, so that the phenomenon that the excessive Ga atoms and the excessive Al atoms form metal drops on the surface of the epitaxial layer is avoided, and the phenomenon that the metal drops absorb holes is reduced. The crystal quality of the finally obtained P-type AlGaN layer can be ensured while a large number of holes can be provided by the finally obtained P-type AlGaN layer.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present disclosure, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present disclosure, and it is obvious for those skilled in the art to obtain other drawings based on the drawings without creative efforts.
Fig. 1 is a flowchart of a method for preparing an ultraviolet light emitting diode epitaxial wafer for increasing a hole amount according to an embodiment of the present disclosure;
fig. 2 is a schematic structural diagram of an ultraviolet light emitting diode epitaxial wafer for increasing the hole quantity according to an embodiment of the present disclosure;
fig. 3 is a flowchart of another method for preparing an ultraviolet light emitting diode epitaxial wafer for increasing the hole quantity according to an embodiment of the present disclosure;
fig. 4 is a schematic structural diagram of another ultraviolet light emitting diode epitaxial wafer for increasing the hole quantity according to an embodiment of the present disclosure.
Detailed Description
To make the objects, technical solutions and advantages of the present disclosure more apparent, embodiments of the present disclosure will be described in detail with reference to the accompanying drawings.
Fig. 1 is a flowchart of a method for manufacturing an ultraviolet light emitting diode epitaxial wafer for increasing a hole amount according to an embodiment of the present disclosure, and as can be seen from fig. 1, the embodiment of the present disclosure provides a method for manufacturing an ultraviolet light emitting diode epitaxial wafer for increasing a hole amount, where the method for manufacturing an ultraviolet light emitting diode epitaxial wafer for increasing a hole amount includes:
s101: a substrate is provided.
S102: and sequentially growing an N-type AlGaN layer and an active layer on the substrate.
S103: periodically growing an AlGaN composite layer on the active layer to obtain a P-type AlGaN layer, wherein the AlGaN composite layer comprises an AlGaN three-dimensional sublayer, an AlGaN covering sublayer and an AlGaN processing sublayer which are sequentially stacked, and the AlGaN three-dimensional sublayer comprises a plurality of AlGaN island-shaped structures stacked on the N-type AlGaN layer or stacked on the AlGaN composite layer; growing an AlGaN composite layer comprising: introducing ammonia, a Ga source, an Al source and a Mg source into the reaction cavity to grow an AlGaN three-dimensional sublayer, wherein the flow ratio of the ammonia to the Ga source is 1000-fold 2000, and the flow ratio of the ammonia to the Al source is 500-fold 1000; introducing ammonia gas, a Ga source, an Al source and a Mg source into the reaction cavity to grow an AlGaN covering sublayer, wherein the flow ratio of the ammonia gas to the Ga source is 100-200, and the flow ratio of the ammonia gas to the Al source is 50-100; and introducing only ammonia gas into the reaction cavity to grow the AlGaN treatment sublayer.
And periodically growing an AlGaN composite layer on the active layer to obtain a P-type AlGaN layer, wherein the AlGaN composite layer comprises an AlGaN three-dimensional sublayer, an AlGaN covering sublayer and an AlGaN processing sublayer which are sequentially stacked. The P-type AlGaN layer is of a periodically-laminated structure, so that the stress release of the P-type AlGaN layer is facilitated, the internal stress and strain of the P-type AlGaN layer are reduced to reduce defects and improve the crystal quality of the obtained P-type AlGaN layer, and the reduction of the defects can promote the movement of holes and reduce the probability of the holes being captured by the defects. And in the process of growing the AlGaN three-dimensional sublayer of the AlGaN composite layer, introducing ammonia gas, a Ga source, an Al source and a Mg source into the reaction cavity to grow the AlGaN three-dimensional sublayer, wherein the flow ratio of the ammonia gas to the Ga source is 1000-plus-2000, and the flow ratio of the ammonia gas to the Al source is 500-plus-1000, so that the AlGaN three-dimensional sublayer which is rich in nitrogen elements and comprises a plurality of AlGaN island-shaped structures stacked on the N-type AlGaN layer or stacked on the AlGaN composite layer can be obtained. The AlGaN three-dimensional sub-layer exists in an island structure, and more Mg elements can be more easily doped into the surface of the AlGaN three-dimensional sub-layer, so that the doping of Mg is promoted to increase the quantity of holes available at the bottom of the P-type AlGaN layer. And further growing an AlGaN covering sublayer on the AlGaN three-dimensional layer, wherein the flow ratio of ammonia to the Ga source is 100-200 in the growing process of the AlGaN covering sublayer, and the flow ratio of the ammonia to the Al source is 50-100. On one hand, defects caused by doping of a large amount of Mg can be effectively reduced, on the other hand, in a low-nitrogen environment, viscosity of ammonia gas to Al atoms and Ga atoms is reduced, the Al atoms and the Ga atoms in the AlGaN covering sublayer can reach the optimal nucleation position more easily for stable growth, the Al atoms and the Ga atoms are distributed more uniformly, and the crystal quality of the finally obtained AlGaN composite layer is ensured. And finally, only introducing ammonia gas into the reaction cavity to grow the AlGaN treatment sublayer, wherein the AlGaN treatment sublayer can react with excessive Ga atoms or Al atoms in the reaction cavity, so that the phenomenon that the excessive Ga atoms and the excessive Al atoms form metal drops on the surface of the epitaxial layer is avoided, and the phenomenon that the metal drops absorb holes is reduced. The crystal quality of the finally obtained P-type AlGaN layer can be ensured while a large number of holes can be provided by the finally obtained P-type AlGaN layer. And the addition of the AlGaN treatment sublayer can improve the quality of the obtained P-type AlGaN layer and play a certain role in cleaning the gas environment in the reaction cavity, so that the gas environment in the reaction cavity does not need to be cleaned, and the preparation cost of the ultraviolet light-emitting diode can be reduced.
In the embodiments provided in the present disclosure, the AlGaN cladding sublayer covers a so-called portion of the AlGaN three-dimensional sublayer, which is distant from one surface of the substrate.
Optionally, in step S103, when the AlGaN three-dimensional sublayer is grown, ammonia with a flow rate of 100-200slm, a Ga source with a flow rate of 0.05-0.2slm, and an Al source with a flow rate of 0.1-0.4slm are respectively introduced into the reaction chamber.
In the growth process of the AlGaN three-dimensional sublayer, the flow rates of ammonia gas, a Ga source and an Al source are respectively in the ranges, so that the obtained AlGaN three-dimensional sublayer can be ensured to have better quality, the AlGaN three-dimensional sublayer is convenient for doping Mg atoms in the growth process, the quantity of holes in a finally obtained P-type AlGaN layer can be increased, the quantity of the holes which can enter an active layer and are subjected to light emitting recombination with electrons is increased, and the light emitting efficiency of the obtained ultraviolet light emitting diode is increased.
Optionally, in step S103, when the AlGaN cap sublayer is grown, ammonia gas with a flow rate of 10to 20slm, a Ga source with a flow rate of 0.05 to 0.2slm, and an Al source with a flow rate of 0.1 to 0.4slm are respectively introduced into the reaction chamber.
When the AlGaN covering sublayer grows, the flow rates of ammonia gas, a Ga source and an Al source are respectively in the ranges, the AlGaN covering sublayer with good quality and smooth surface quality can be obtained, the crystal quality of a finally obtained P-type AlGaN layer is improved, and the quality of the obtained ultraviolet light-emitting diode epitaxial wafer is ensured to be good.
Illustratively, the flow of the introduced Mg source in the growth process of the AlGaN three-dimensional sub-layer is larger than that of the introduced Mg source in the growth process of the AlGaN covering sub-layer.
In the growth structure of the AlGaN three-dimensional sublayer and the AlGaN covering sublayer, the flow of the Mg source introduced into the AlGaN three-dimensional sublayer is larger than the force of the Mg source introduced into the growth structure of the AlGaN covering sublayer, so that the Mg in the AlGaN three-dimensional sublayer can be greatly doped, and a P-type AlGaN layer can be ensured to stably provide a large number of holes. And the doping of Mg in the AlGaN covering sublayer can provide a certain hole amount, and meanwhile, the AlGaN covering sublayer has good quality, so that the quality of an epitaxial material growing on the AlGaN covering sublayer can be controlled to be good, ohmic contact with an electrode can be formed conveniently in the subsequent process, and the contact resistance of the finally obtained ultraviolet light-emitting diode is reduced so as to reduce the working voltage of the finally obtained ultraviolet light-emitting diode.
Optionally, during the growth process of the AlGaN three-dimensional sublayer, the flow rate of the Mg source introduced into the reaction chamber is 1500-.
In the growth process of the AlGaN three-dimensional sublayer and the AlGaN covering sublayer, the flow of the introduced Mg source is respectively in the above range, so that the obtained AlGaN three-dimensional sublayer and the AlGaN covering sublayer can be ensured to provide sufficient holes, and meanwhile, the finally obtained P-type AlGaN layer can be ensured to have good crystal quality, and the AlGaN three-dimensional sublayer and the AlGaN covering sublayer can be suitable for most ultraviolet light emitting diode epitaxial wafers with different thickness specifications.
Optionally, in step S103, the thickness of the AlGaN three-dimensional sublayer is less than or equal to the thickness of the AlGaN covering sublayer, and the thickness of the AlGaN three-dimensional sublayer is greater than the thickness of the AlGaN processing sublayer.
The thickness of the AlGaN three-dimensional sublayer is smaller than or equal to that of the AlGaN covering sublayer, the thickness of the AlGaN three-dimensional sublayer is larger than that of the AlGaN processing sublayer, so that the AlGaN three-dimensional sublayer can be ensured to provide sufficient holes, the AlGaN covering sublayer can be ensured to effectively improve the overall quality of an AlGaN composite layer, and meanwhile, the thickness of the AlGaN processing sublayer is smaller, so that the crystal quality of a P-type AlGaN layer can be effectively improved while the preparation cost of an ultraviolet light-emitting diode epitaxial wafer is not excessively improved.
It should be noted that the sum of the thickness of the AlGaN covering sublayer and the thickness of the AlGaN processing sublayer is larger than that of the AlGaN three-dimensional sublayer.
Optionally, in step S103, the thickness of the AlGaN three-dimensional sublayer is 50to 100nm, the thickness of the AlGaN covering sublayer is 50to 100nm, and the thickness of the AlGaN processing sublayer is 10to 30 nm.
The thicknesses of the sublayers in the AlGaN composite layer are respectively in the ranges, so that the quality of the obtained AlGaN composite layer can be ensured, and the preparation cost of the ultraviolet light-emitting diode can not be greatly increased.
Optionally, in step S103, the growth time of the AlGaN processing sublayer is 30 to 50S.
The growth time of the AlGaN treatment sublayer is in the range, the obtained AlGaN treatment sublayer can be ensured to have good quality, excessive Ga atoms and Al atoms in the reaction cavity are sufficiently treated, the crystal quality of the obtained P-type AlGaN layer can be improved, and meanwhile, the preparation cost of the ultraviolet light-emitting diode cannot be greatly improved.
Optionally, in step S103, the growth temperature and the growth pressure of the AlGaN three-dimensional sub-layer are respectively equal to the growth temperature and the growth pressure of the AlGaN covering sub-layer.
The growth temperature and the growth pressure of the AlGaN three-dimensional sublayer are respectively equal to those of the AlGaN covering sublayer, so that the quality of the obtained P-type AlGaN layer can be ensured, the growth environment in a reaction cavity does not need to be adjusted greatly, and the preparation period and the preparation cost of the ultraviolet light-emitting diode epitaxial wafer can be reduced.
The growth temperature and growth pressure of the AlGaN processing sub-layer may be equal to the growth temperature and growth pressure of the AlGaN three-dimensional sub-layer, respectively. The present disclosure is not so limited.
Optionally, the growth temperature and growth pressure of the AlGaN three-dimensional sub-layer are 850-1050 ℃ and 100-200Torr, respectively.
The growth temperature and the growth pressure of the AlGaN three-dimensional sublayer are respectively in the above ranges, so that the growth quality of the obtained AlGaN three-dimensional sublayer can be ensured to be better, and the crystal quality of the finally obtained P-type AlGaN is improved.
Fig. 2 is a schematic structural diagram of an ultraviolet light emitting diode epitaxial wafer for increasing a hole amount according to an embodiment of the present disclosure, where the ultraviolet light emitting diode epitaxial wafer shown in fig. 2 can be obtained by using the ultraviolet light emitting diode epitaxial wafer preparation method described in fig. 1, and as can be seen from fig. 2, the ultraviolet light emitting diode epitaxial wafer for increasing a hole amount is prepared by using the ultraviolet light emitting diode epitaxial wafer preparation method for increasing a hole amount as described above, the ultraviolet light emitting diode epitaxial wafer for increasing a hole amount includes a substrate 1, and an N-type AlGaN layer 2, an active layer 3, and a P-type AlGaN layer 4 that are sequentially stacked on the substrate 1, the P-type AlGaN layer 4 includes periodically stacked AlGaN composite layers 41, and each AlGaN composite layer 41 includes an AlGaN three-dimensional sublayer 411, an AlGaN cover sublayer 412, and an AlGaN processing sublayer 413 that are sequentially stacked.
The technical effects corresponding to the ultraviolet light emitting diode epitaxial wafer shown in fig. 2 can refer to the technical effects of the ultraviolet light emitting diode manufacturing method shown in fig. 1, and therefore, the details are not repeated herein.
Alternatively, the overall thickness of the P-type AlGaN layer 4 may be 100-300 nm.
The whole thickness of the P-type AlGaN layer 4 is within the above range, so that a large number of holes can be provided, the preparation cost of the ultraviolet light-emitting diode epitaxial wafer cannot be excessively increased, the light absorption effect of the P-type AlGaN layer 4 cannot be too serious, and the luminous efficiency of the finally obtained ultraviolet light-emitting diode epitaxial wafer can be greatly improved.
Illustratively, the thickness of the AlGaN composite layer 41 may be 50-100nm, and the number of cycles of the AlGaN composite layer 41 may be 3-6.
The thickness and the periodicity of the AlGaN composite layer 41 are within the above ranges, so that the obtained P-type AlGaN layer 4 has fewer defects, and the P-type AlGaN layer 4 can provide a large number of holes, thereby ensuring the improvement of the light extraction efficiency of the finally obtained ultraviolet light emitting diode.
Optionally, the thickness of the AlGaN three-dimensional sublayer 411 is 50to 100nm, the thickness of the AlGaN covering sublayer 412 is 50to 100nm, and the thickness of the AlGaN processing sublayer 413 is 10to 30 nm.
The thicknesses of the sublayers in the AlGaN composite layer 41 are within the above ranges, so that the quality of the obtained AlGaN composite layer 41 can be ensured, and the manufacturing cost of the ultraviolet light emitting diode is not greatly increased.
Fig. 3 is a flowchart of another method for preparing an ultraviolet light emitting diode epitaxial wafer for increasing a hole amount according to an embodiment of the present disclosure, and referring to fig. 3, the method for preparing an ultraviolet light emitting diode epitaxial wafer for increasing a hole amount further includes:
s201: a substrate is provided.
Alternatively, the substrate may be a sapphire substrate.
S202: and growing a buffer layer on the substrate, wherein the buffer layer is an AlN layer.
The AlN layer in step S202 may be obtained by magnetron sputtering.
Optionally, the AlN layer is sputtered at 400-700 deg.C under 3000-5000W and 1-10 torr. A buffer layer of better quality can be obtained.
Optionally, step S202 further includes: and carrying out in-situ annealing treatment on the buffer layer, wherein the temperature is 1000-1200 ℃, the pressure range is 150-500 Torr, and the time is 5-10 minutes. The crystal quality of the buffer layer can be further improved.
S203: and growing an undoped AlGaN layer on the buffer layer.
Optionally, the growth temperature of the undoped AlGaN layer is 1000-1200 ℃, and the pressure is 50-200 torr. The obtained undoped AlGaN layer has better quality, and the crystal quality of the finally obtained ultraviolet light-emitting diode can be improved.
Optionally, the undoped AlGaN layer is grown to a thickness of between 0.1 and 3.0 microns. The crystal quality of the finally obtained ultraviolet light emitting diode can be improved.
S204: and growing an N-type AlGaN layer on the undoped AlGaN layer.
Optionally, the N-type layer is a Si-doped N-type AlGaN layer. Easy preparation and acquisition.
Optionally, the growth temperature of the N-type AlGaN layer is 1000-1200 ℃, and the pressure is 50-200 torr. The obtained N-type AlGaN layer has better quality, and the crystal quality of the finally obtained ultraviolet light-emitting diode can be improved.
Illustratively, the growth thickness of the N-type AlGaN layer is between 1 and 4.0 microns. The crystal quality of the finally obtained ultraviolet light emitting diode can be improved.
Illustratively, in the N-type AlGaN layer, the doping concentration of Si is 10 18 cm -3 -10 20 cm -3 In the meantime.
S205: and growing a multi-quantum well layer on the N-type AlGaN layer.
Alternatively, the multiple quantum well layer may include a multiple quantum well structure. The multiple quantum well layer comprises multiple alternately stacked GaN layers and Al x Ga 1-x N layer 0<x<0.3。
Illustratively, the growth temperature of the GaN layer ranges between 850 ℃ and 950 ℃, and the pressure ranges between 100Torr and 300 Torr; al (Al) x Ga 1-x The growth temperature of the N layer is 900-1000 ℃, and the growth pressure is 50-200 Torr. A well-qualified multiple quantum well layer can be obtained.
Optionally, the well thickness of the GaN layer is around 3nm and the barrier thickness is between 8nm and 20 nm. The obtained multi-quantum well layer has good quality and reasonable cost.
S206: and growing an electron barrier layer on the multi-quantum well layer.
Alternatively, the electron blocking layer may be p-type Al y Ga 1-y N layer 0.2<y<0.5。
Alternatively, p-type Al y Ga 1-y The growth temperature of the N layer is 900-1050 ℃, and the pressure is 50-200 torr. The obtained p-type doped AlGaN layer has better quality, and the crystal quality of the finally obtained ultraviolet light-emitting diode can be improved.
Illustratively, the p-type doped AlGaN layer is grown to a thickness of between 15 and 60 nanometers. The crystal quality of the finally obtained ultraviolet light emitting diode can be improved.
S207: and growing a P-type AlGaN layer on the electron blocking layer.
The growth conditions of the P-type AlGaN layer in step S207 can refer to step S103 of the preparation method shown in fig. 1, and thus are not described again.
S208: and growing a p-type contact layer on the p-type AlGaN layer.
Optionally, the p-type contact layer is made of AlGaN material, and the thickness of the p-type contact layer is 10-300 nm. The growth and realization of the p-type contact layer are facilitated.
It should be noted that, in the embodiment of the present disclosure, a VeecoK 465i or C4 or RB MOCVD (Metal Organic Chemical Vapor Deposition) apparatus is adopted to implement the growth method of the LED. By using high-purity H 2 (Hydrogen) or high purity N 2 (Nitrogen) or high purity H 2 And high purity N 2 As a carrier gas, high purity NH 3 As an N source, trimethyl gallium (TMGa) and triethyl gallium (TEGa) as gallium sources, trimethyl indium (TMIn) as indium sources, silane (SiH4) as an N-type dopant, trimethyl aluminum (TMAl) as an aluminum source, and magnesium dicylocene (CP) 2 Mg) as a P-type dopant.
Fig. 4 is a schematic structural diagram of another ultraviolet light emitting diode epitaxial wafer for reducing operating voltage according to an embodiment of the present disclosure, as can be seen from fig. 4, the ultraviolet light emitting diode epitaxial wafer shown in fig. 4 can be obtained by using the ultraviolet light emitting diode epitaxial wafer manufacturing method described in fig. 3, as can be seen from fig. 4, the ultraviolet light emitting diode epitaxial wafer can include a substrate 1, and a buffer layer 5, an undoped AlGaN layer 6, an N-type AlGaN layer 2, an active layer 3, an electron blocking layer 7, a P-type AlGaN layer 4, and a P-type contact layer 8 that are sequentially stacked on the substrate 1, the P-type AlGaN layer 4 includes periodically stacked AlGaN composite layers 41, and each AlGaN composite layer 41 includes an AlGaN three-dimensional sublayer 411, an AlGaN covering sublayer 412, and an AlGaN processing sublayer 413 that are sequentially stacked.
Note that the structure of the P-type AlGaN layer 4 in fig. 4 is the same as the structure of the P-type AlGaN layer 4 shown in fig. 2, and therefore, the description thereof is omitted.
Illustratively, the buffer layer 5 is an AlN layer. The lattice mismatch of the structure behind the substrate 1 and the buffer layer 5 can be effectively alleviated.
Optionally, the thickness of the buffer layer 5 is 15-35 nm. The lattice mismatch can be effectively mitigated without unduly increasing the manufacturing cost.
Alternatively, the thickness of the undoped AlGaN layer 6 may be 0.1 to 3.0 micrometers.
The thickness of the undoped AlGaN layer 6 is proper, the cost is reasonable, and the quality of the ultraviolet light-emitting diode can be effectively improved.
Optionally, the thickness of the N-type AlGaN layer 2 can be between 1.5 and 3.5 microns.
The N-type AlGaN layer 2 can provide carriers reasonably, and the quality of the N-type AlGaN layer 2 itself is also good.
Illustratively, the N-type element doped in the N-type AlGaN layer 2 may be a Si element.
Exemplarily, the active layer 3 may be a multiple quantum well structure. The active layer 3 includes GaN layers 31 and AlxGa1-xN layers 32 alternately stacked, wherein 0< x < 0.3. The luminous efficiency is better.
The number of layers of the GaN layer 31 and the AlxGa1-xN layer 32 may be the same, and the number of layers may be 4 to 12. The obtained active layer 3 has better quality and more reasonable cost.
Alternatively, the thickness of the GaN layer 31 may be around 3nm, and the thickness of the AlxGa1-xN layer 32 may be between 8nm and 20 nm. Carriers can be efficiently trapped and light can be emitted.
Illustratively, the electron blocking layer 7 may be P-type Al y Ga 1-y N layer 0.2<y<0.5, P type Al y Ga 1-y The thickness of the N layer may be between 15nm and 60 nm. The effect of blocking electrons is better.
Optionally, the thickness of the p-type AlGaN layer 4 is 50-300 nm. The obtained p-type AlGaN layer 4 has good quality as a whole.
It should be noted that fig. 4 is only one implementation manner of the ultraviolet light emitting diode epitaxial wafer provided in the embodiment of the present disclosure, and in other implementation manners provided in the present disclosure, the ultraviolet light emitting diode epitaxial wafer may also be another form of ultraviolet light emitting diode epitaxial wafer including a reflective layer, which is not limited by the present disclosure.
Although the present disclosure has been described with reference to specific embodiments, it will be understood by those skilled in the art that various changes, substitutions and alterations can be made herein without departing from the spirit and scope of the disclosure.
Claims (10)
1. The preparation method of the ultraviolet light emitting diode epitaxial wafer for improving the hole quantity is characterized by comprising the following steps of:
providing a substrate;
sequentially growing an N-type AlGaN layer and an active layer on the substrate;
periodically growing an AlGaN composite layer on the active layer to obtain a P-type AlGaN layer, wherein the AlGaN composite layer comprises an AlGaN three-dimensional sublayer, an AlGaN covering sublayer and an AlGaN processing sublayer which are sequentially stacked, and the AlGaN three-dimensional sublayer comprises a plurality of AlGaN island-shaped structures stacked on the N-type AlGaN layer or stacked on the AlGaN composite layer;
the growing the AlGaN composite layer includes:
introducing ammonia gas, a Ga source, an Al source and a Mg source into the reaction cavity to grow the AlGaN three-dimensional sublayer, wherein the flow ratio of the ammonia gas to the Ga source is 1000-fold and the flow ratio of the ammonia gas to the Al source is 500-fold 1000-fold;
introducing ammonia gas, a Ga source, an Al source and a Mg source into the reaction cavity to grow the AlGaN covering sublayer, wherein the flow ratio of the ammonia gas to the Ga source is 100-200, and the flow ratio of the ammonia gas to the Al source is 50-100;
and introducing only ammonia gas into the reaction cavity to grow the AlGaN treatment sublayer.
2. The method for preparing an ultraviolet light-emitting diode epitaxial wafer capable of increasing the hole quantity according to claim 1, wherein ammonia gas with a flow rate of 100-200slm, a Ga source with a flow rate of 0.05-0.2slm and an Al source with a flow rate of 0.1-0.4slm are respectively introduced into the reaction chamber when the AlGaN three-dimensional sublayer is grown.
3. The method for preparing the ultraviolet light-emitting diode epitaxial wafer capable of improving the hole quantity according to claim 2, is characterized in that ammonia gas with the flow rate of 10-20slm, a Ga source with the flow rate of 0.05-0.2slm and an Al source with the flow rate of 0.1-0.4slm are respectively introduced into the reaction chamber when the AlGaN covering sublayer is grown.
4. The method for preparing the ultraviolet light-emitting diode epitaxial wafer capable of improving the hole quantity is characterized in that the thickness of the AlGaN three-dimensional sub-layer is less than or equal to that of the AlGaN covering sub-layer, and the thickness of the AlGaN three-dimensional sub-layer is greater than that of the AlGaN processing sub-layer.
5. The method for preparing the ultraviolet light-emitting diode epitaxial wafer capable of increasing the hole quantity according to any one of claims 1 to 3, is characterized in that the thickness of the AlGaN three-dimensional sub-layer is 50-100nm, the thickness of the AlGaN covering sub-layer is 50-100nm, and the thickness of the AlGaN processing sub-layer is 10-30 nm.
6. The method for preparing the ultraviolet light-emitting diode epitaxial wafer capable of improving the hole quantity is characterized in that the growth time of the AlGaN treatment sub-layer is 30-50 s.
7. The method for preparing an ultraviolet light emitting diode epitaxial wafer capable of increasing the hole quantity according to any one of claims 1 to 3, wherein the growth temperature and the growth pressure of the AlGaN three-dimensional sub-layer are respectively equal to the growth temperature and the growth pressure of the AlGaN covering sub-layer.
8. The method as claimed in claim 7, wherein the growth temperature and growth pressure of the AlGaN three-dimensional sub-layer are 850-1050 ℃ and 100-200Torr, respectively.
9. The method for preparing the ultraviolet light-emitting diode epitaxial wafer capable of improving the hole quantity according to any one of claims 1 to 3, characterized in that the flow of the introduced Mg source in the growth process of the AlGaN three-dimensional sub-layer is larger than the flow of the introduced Mg source in the growth process of the AlGaN covering sub-layer.
10. The ultraviolet light-emitting diode epitaxial wafer capable of improving the hole quantity is characterized by being prepared by the method for preparing the ultraviolet light-emitting diode epitaxial wafer capable of improving the hole quantity according to any one of claims 1 to 9, and the ultraviolet light-emitting diode epitaxial wafer capable of improving the hole quantity comprises a substrate, and an N-type AlGaN layer, an active layer and a P-type AlGaN layer which are sequentially stacked on the substrate, wherein the P-type AlGaN layer comprises periodically stacked AlGaN composite layers, and each AlGaN composite layer comprises an AlGaN three-dimensional sublayer, an AlGaN covering sublayer and an AlGaN processing sublayer which are sequentially stacked.
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