CN114823947A - InP-based ultra-wide spectrum photoelectric detector and preparation method thereof - Google Patents
InP-based ultra-wide spectrum photoelectric detector and preparation method thereof Download PDFInfo
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035236—Superlattices; Multiple quantum well structures
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
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- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0328—Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 - H01L31/032
- H01L31/0336—Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 - H01L31/032 in different semiconductor regions, e.g. Cu2X/CdX hetero-junctions, X being an element of Group VI of the Periodic System
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- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
- H01L31/109—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PN heterojunction type
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
Abstract
The invention provides an InP-based ultra-wide spectrum photoelectric detector and a preparation method thereof. The invention adopts AlAsSb and InAlAs or InP as an electron blocking layer and a transition layer to extend the testing wavelength of the photoelectric detector to visible light and ultraviolet wave bands, adopts InGaAs bulk material and InGaAs/GaAsSb second class superlattice material as an absorption layer of the semiconductor photoelectric detector and can extend the testing wavelength of the photoelectric detector to near infrared and short wave infrared wave bands. When the difference between the formed electron ground state energy level and the hole ground state energy level is smaller than the energy corresponding to the photon for extending the short wave infrared wavelength, the light for extending the short wave infrared wavelength can be absorbed, thereby realizing the coverage of the extended short wave infrared band. The photoelectric detector adopts InGaAs/GaAsSb superlattice with lattice matched with the InP substrate as an absorption region, and has the advantages of lower dark current and monolithic integration compared with a high-indium-component lattice mismatched InGaAs extended short-wave infrared detector.
Description
Technical Field
The invention relates to an ultra-wide spectrum semiconductor photoelectric detector with InP-based spectral response from ultraviolet to extended short-wave infrared bands (250nm-2500nm) and a preparation method of the ultra-wide spectrum semiconductor photoelectric detector, and belongs to the technical field of photoelectric detectors.
Background
With the development of related fields such as gas inspection and atmospheric sensing, full spectrum detection from ultraviolet to infrared is helpful for realizing the inspection of various gases. At present, the full spectrum detection is usually realized by switching among a plurality of different waveband response detectors, so that the test system is relatively complex. The implementation of a high performance ultra-broad spectrum photodetector would greatly simplify the optical detection system. The wide spectrum detector reported at present often has the defects of poor performance, high dark current and the like, and the detection range is only slightly expanded from an ultraviolet band to a short-wave infrared band.
Disclosure of Invention
The invention aims to provide a room-temperature working detector which has wider spectral response and lower dark current, and the response spectrum of the detector is from ultraviolet to extended short-wave near infrared, so as to solve the problem of system complexity caused by the switching of detectors with different wave bands in the existing full-spectrum system.
In order to achieve the above object, one technical solution of the present invention is to provide an InP-based ultra-wide spectrum photodetector, whose spectrum response ranges from ultraviolet to extended short-wave infrared bands, the InP-based ultra-wide spectrum photodetector including at least:
the InP substrate layer, the negative pole contact layer, a plurality of periodically repeated InGaAs/GaAsSb superlattice absorbing layers, InGaAs absorbing layers, InAlAs or InP transition layers, the electron barrier layer and the anode contact layer that stack gradually, wherein: the InGaAs/GaAsSb superlattice absorption layer and the InGaAs absorption layer are used for absorbing photons so as to excite electron-hole pairs in the absorption layers; the electron blocking layer is used for blocking electrons from diffusing towards the anode direction; the InAlAs or InP transition layer is used for performing valence band transition between the electron blocking layer and the InGaAs absorption layer;
the cathode is formed on the cathode contact layer, and ohmic contact is formed between the cathode and the cathode contact layer;
the anode is formed on the anode contact layer, and ohmic contact is formed between the anode and the anode contact layer;
and forming a groove window in the anode contact layer by removing partial materials to further enhance the response of ultraviolet and visible bands.
Preferably, in each period of the InGaAs/GaAsSb superlattice absorption layer, the thickness of the InGaAs layer is 3-6nm, and the thickness of the GaAsSb layer is 3-6 nm; the total thickness of the InGaAs/GaAsSb superlattice absorption layer is 1000-5000nm, and the doping concentration is i-type intrinsic doping according to the relevant performance requirements of the device.
Preferably, the thickness of the InGaAs absorption layer is 200-1000nm, and the doping concentration is i-type intrinsic doping.
Preferably, the cathode contact layer has a thickness of 500 nm; the thickness of the electron blocking layer is 20 nm; the thickness of the InAlAs or InP transition layer is 20 nm; the thickness of the anode contact layer is 10 nm.
Preferably, the cathode contact layer is made of N-type heavily doped semiconductor material with the doping concentration of 1 × 10 18 cm -3 (ii) a The anode contact layer is made of P-type heavily doped semiconductor material with the doping concentration of 1 × 10 18 cm -3 (ii) a The electron barrier layer is made of P-type heavily-doped wide-band-gap semiconductor material with the doping concentration of 1 × 10 18 cm -3 (ii) a The transition layer is made of P-type doped wide band gap semiconductor material with doping concentration of 0.5-3 × 10 17 cm -3 ；
All semiconductor materials adopted by the cathode contact layer, the anode contact layer, the electron blocking layer and the transition layer are lattice-matched with the InP substrate layer.
Preferably, the semiconductor material adopted by the cathode contact layer is InGaAs; the anode contact layer is made of InGaAs as a semiconductor material; the electron blocking layer is made of AlAsSb semiconductor material; the semiconductor material adopted by the transition layer is InAlAs.
Another technical solution of the present invention is to provide a method for manufacturing the InP based ultra-wide spectrum photodetector, which comprises at least the following steps:
sequentially growing a cathode contact layer, an InGaAs/GaAsSb superlattice absorption layer, an InGaAs absorption layer, an InAlAs or InP transition layer, an electron blocking layer and an anode contact layer on the InP substrate layer by using a molecular beam epitaxy method or an organic metal chemical vapor deposition method;
titanium, platinum and gold are evaporated on the upper surface of the anode contact layer by using an electron beam evaporation technology to form an anode;
etching sequentially from the anode downwards by using dry etching or wet etching, wherein the etching surface is stopped in the cathode contact layer to form a columnar step protruding out of the cathode contact layer;
sequentially evaporating titanium, platinum and gold on the surface of the cathode contact layer by using an electron beam evaporation technology to form a cathode;
and on the anode contact layer, a groove window is formed by wet etching or dry etching to remove partial materials, so that the response of ultraviolet bands and visible bands is further enhanced.
Preferably, the method further comprises the step of passivating the side wall of the columnar step.
Preferably, the passivation layer is formed by passivating the sidewall of the pillar step, and the material of the passivation layer includes silicon nitride or silicon dioxide.
Preferably, the thicknesses of the titanium, the platinum and the gold of the anode are respectively 20nm, 20nm and 80 nm; the thicknesses of the titanium, the platinum and the gold of the cathode are respectively 20nm, 20nm and 80 nm.
The invention realizes a near infrared detector from ultraviolet to extended short wave by utilizing an InGaAs/GaAsSb superlattice structure based on an InP substrate. The response waveband of the photoelectric detector at room temperature is 250 nanometers to 2.5 micrometers. Compared with other detectors reported at present, the photoelectric detector disclosed by the invention has a larger spectral response range and has larger application potential in the related fields of full spectrum inspection and the like.
Drawings
Fig. 1 to 5 are schematic structural diagrams showing steps of a method for manufacturing an ultra-wide spectrum semiconductor photodetector having a spectral response from ultraviolet to a prolonged short-wave infrared band according to the present invention, wherein fig. 5 is a schematic structural diagram of the ultra-wide spectrum semiconductor photodetector according to the present invention.
In the figure: 10-a substrate layer; 11-a cathode contact layer; 12-InGaAs/GaAsSb superlattice absorption layer; 13-InGaAs absorption layer; 14-an electron blocking layer; 15-a transition layer; 16-an anode contact layer; 17-an anode; 18-a columnar step; 19-a cathode; 20-an insulating layer; 21-a coplanar waveguide electrode; 22-incident light; 23-groove window.
Detailed Description
The invention will be further illustrated with reference to the following specific examples. It should be understood that these examples are for illustrative purposes only and are not intended to limit the scope of the present invention. Further, it should be understood that various changes or modifications of the present invention may be made by those skilled in the art after reading the teaching of the present invention, and such equivalents may fall within the scope of the present invention as defined in the appended claims.
Please refer to fig. 1 to 5. It should be noted that the drawings provided in the present embodiment are only for illustrating the basic idea of the present invention, and the drawings only show the components related to the present invention rather than being drawn according to the number, shape and size of the components in actual implementation, and the type, quantity and proportion of each component in actual implementation may be changed arbitrarily, and the layout of the components may be more complicated.
Example one
As shown in fig. 4 and 5, the present embodiment provides an ultra-wide spectrum semiconductor photodetector for spectral response from ultraviolet to extended short-wave infrared bands, the photodetector comprising at least:
the substrate layer 10, the cathode contact layer 11, the InGaAs/GaAsSb superlattice absorption layer 12, the InGaAs absorption layer 13, the electron blocking layer 14, the transition layer 15 and the anode contact layer 16 are sequentially stacked, wherein: the InGaAs/GaAsSb superlattice absorption layer 12 and the InGaAs absorption layer 13 are used for absorbing photons so as to excite electron-hole pairs in the absorption layers; the electron blocking layer 14 is used for blocking electrons from diffusing towards the anode 17; the transition layer 15 is used for providing valence band transition between the electron blocking layer 14 and the InGaAs absorption layer 13;
a cathode 19 formed on the cathode contact layer 11, wherein an ohmic contact is formed between the cathode 19 and the cathode contact layer 11;
the anode 17 is formed on the anode contact layer 16, and an ohmic contact is formed between the anode 17 and the anode contact layer 16.
The semiconductor photodetector of the embodiment adopts AlAsSb and InAlAs or InP as the electron blocking layer 14 and the transition layer 15, so that the test wavelength of the photodetector can be extended to the visible light and ultraviolet bands. The InGaAs/GaAsSb superlattice material system and the InGaAs material are used as the InGaAs/GaAsSb superlattice absorption layer 12 and the InGaAs absorption layer 13 of the semiconductor photoelectric detector, so that the test wavelength of the photoelectric detector can be extended to the short-wave infrared band. When the difference between the formed electron ground state energy level and the hole ground state energy level is smaller than the energy corresponding to the short-wavelength infrared wavelength-extending photon, the light of the short-wavelength infrared wavelength can be absorbed by the InGaAs/GaAsSb superlattice absorption layer 12 and the InGaAs absorption layer 13, thereby realizing the coverage of the short-wavelength infrared band. The photoelectric detector adopts InGaAs/GaAsSb superlattice with lattice matched with the InP substrate as an absorption region, and has the advantages of lower dark current and monolithic integration compared with a high-indium-component lattice mismatched InGaAs extended short-wave infrared detector.
As an example, the InGaAs/GaAsSb superlattice absorption layer 12 includes a plurality of periodically repeating InGaAs/GaAsSb superlattice absorption layers, and the thickness of the InGaAs layer is about 5nm and the thickness of the GaAsSb layer is about 5nm in each period. The total thickness of 12 sections of the InGaAs/GaAsSb superlattice absorption layer is 1000nm to 5000 nm; the doping is type I intrinsic doping.
As an example, the substrate layer 10 includes an InP substrate layer, the cathode contact layer 11 is made of an N-type heavily doped semiconductor material, the anode contact layer 16 is made of a P-type heavily doped semiconductor material, the electron blocking layer 15 is made of a P-type heavily doped wide bandgap semiconductor material, and the transition layer 14 is made of a P-type heavily doped wide bandgap semiconductor material. The cathode contact layer 11, the anode contact layer 16,All semiconductor materials adopted by the electron blocking layer 15 and the transition layer 14 are in lattice matching with the InP substrate layer, so that the problems of high dark current caused by defects and dislocation and the like can be effectively reduced, and the detection sensitivity of the detector is improved. Preferably, the doping concentration of the cathode contact layer 11 is 1 × 10 18 cm -3 Left and right; the doping concentration of the anode contact layer 16 is 1 x 10 18 cm -3 Left and right; the doping concentration of the electron blocking layer 15 is 1 × 10 18 cm -3 Left and right; the doping concentration of the transition layer 14 is 1 × 10 17 cm -3 Left and right.
Preferably, the cathode contact layer 11 is made of InGaAs, the anode contact layer 16 is made of InGaAs, the electron blocking layer 15 is made of AlAsSb, and the transition layer 14 is made of InAlAs.
Preferably, the thickness of the cathode contact layer 11 is about 500nm, the thickness of the electron blocking layer 15 is about 20nm, the thickness of the transition layer 14 is about 20nm, and the thickness of the anode contact layer 16 is about 10 nm.
Example two
As shown in fig. 1 to 5, this embodiment provides a method for manufacturing an ultra-wide spectrum semiconductor photodetector with a spectrum response from ultraviolet to a prolonged short-wave infrared band, and the ultra-wide spectrum semiconductor photodetector described in the first embodiment can be manufactured by using the manufacturing method.
The preparation method comprises the following steps:
as shown in fig. 1, step S1: a cathode contact layer 11, an InGaAs/GaAsSb superlattice absorption layer 12, an InGaAs absorption layer 13, an electron blocking layer 14, a transition layer 15 and an anode contact layer 16 are grown on the substrate layer 10 by a molecular beam epitaxy method.
In this embodiment, the parameters of the materials, thickness, doping concentration, and the like used in the above layers are shown in table 1:
TABLE 1
As shown in fig. 2, step S2: and titanium, platinum and gold are evaporated on the upper surface of the anode contact layer 16 by an electron beam evaporation technology to form an anode 17. In this embodiment, the thicknesses of titanium, platinum and gold of the anode 17 are 20nm, 20nm and 80nm, respectively.
As shown in fig. 3, step S3: and etching is carried out downwards from the anode 17 by wet etching, and the etching surface stops in the cathode contact layer 11 to form a columnar step 18 protruding out of the cathode contact layer 11. Etching is performed downwards from the anode 17 by wet etching, and the etching surface stops on the upper surface of the electron blocking layer 15 to form a groove window 23 recessed in the anode contact layer 16.
As an example, after the pillar step 18 is formed, passivation is performed on the sidewall of the pillar step 18, and the insulating material used in the passivation is Si 3 N 4 。
As shown in fig. 4, step S4: titanium, platinum and gold are sequentially deposited on the surface of the cathode contact layer 11 by an electron beam evaporation technique to form a cathode 19. In this embodiment, the thicknesses of titanium, platinum and gold of the cathode 19 are 20nm, 20nm and 80nm, respectively.
Experiments show that the spectral response (incident light 22) range of the photoelectric detector prepared by the steps is 250nm to 2400nm at room temperature, the responsivity reaches 0.13A/W at 2000nm, and the quantum efficiency reaches 61% at 630nm and 1310 nm.
In summary, the present invention provides a broad spectrum semiconductor photodetector for extending short wave infrared band and a method for manufacturing the same, in which AlAsSb and InAlAs are used as an electron blocking layer and a transition layer to extend the test wavelength of the photodetector to visible light and ultraviolet band, and an InGaAs/GaAsSb superlattice material system and InGaAs material are used as an absorption layer of the semiconductor photodetector to extend the test wavelength of the photodetector to extend short wave infrared band. When the difference between the formed electron ground state energy level and the hole ground state energy level is smaller than the energy corresponding to the photon for extending the short wave infrared wavelength, the light for extending the short wave infrared wavelength can be absorbed, thereby realizing the coverage of the extended short wave infrared band. The photoelectric detector adopts InGaAs/GaAsSb second-class superlattice as an absorption region, and the longer carrier service life of the photoelectric detector is beneficial to improving the optical responsivity of the device. Therefore, the invention effectively overcomes various defects in the prior art and has high industrial utilization value.
The foregoing embodiments are merely illustrative of the principles and utilities of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or change the above-mentioned embodiments without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which can be made by those skilled in the art without departing from the spirit and technical spirit of the present invention be covered by the claims of the present invention.
Claims (10)
1. An InP-based ultra-broad spectrum photodetector having a spectral response from ultraviolet to extended short wavelength infrared bands, comprising at least:
the InP substrate layer, the negative pole contact layer, a plurality of periodically repeated InGaAs/GaAsSb superlattice absorbing layers, InGaAs absorbing layers, InAlAs or InP transition layers, the electron barrier layer and the anode contact layer that stack gradually, wherein: the InGaAs/GaAsSb superlattice absorption layer and the InGaAs absorption layer are used for absorbing photons so as to excite electron-hole pairs in the absorption layers; the electron blocking layer is used for blocking electrons from diffusing towards the anode direction; the InAlAs or InP transition layer is used for performing valence band transition between the electron blocking layer and the InGaAs absorption layer;
the cathode is formed on the cathode contact layer, and ohmic contact is formed between the cathode and the cathode contact layer;
the anode is formed on the anode contact layer, and ohmic contact is formed between the anode and the anode contact layer;
and forming a groove window in the anode contact layer by removing partial materials to further enhance the response of ultraviolet and visible bands.
2. An InP-based ultra-wide spectrum photodetector as claimed in claim 1, wherein the InGaAs/GaAsSb superlattice absorption layer has a thickness of 3-6nm and the GaAsSb layer has a thickness of 3-6nm in each period; the total thickness of the InGaAs/GaAsSb superlattice absorption layer is 1000-5000nm, and the doping concentration is i-type intrinsic doping according to the relevant performance requirements of the device.
3. The InP based ultra-wide spectrum photodetector of claim 1, wherein the InGaAs absorption layer has a thickness of 200-1000nm and a doping concentration of i-type intrinsic doping.
4. An InP-based ultra-wide spectrum photodetector as claimed in claim 1, wherein said cathode contact layer has a thickness of 500 nm; the thickness of the electron blocking layer is 20 nm; the thickness of the InAlAs or InP transition layer is 20 nm; the thickness of the anode contact layer is 10 nm.
5. An InP-based ultra-wide spectrum photodetector as claimed in claim 1, wherein said cathode contact layer is made of N-type heavily doped semiconductor material with a doping concentration of 1 x 10 18 cm -3 (ii) a The anode contact layer is made of P-type heavily doped semiconductor material with the doping concentration of 1 × 10 18 cm -3 (ii) a The electron barrier layer is made of P-type heavily-doped wide-band-gap semiconductor material with the doping concentration of 1 × 10 18 cm -3 (ii) a The transition layer is made of P-type doped wide band gap semiconductor material with doping concentration of 0.5-3 × 10 17 cm -3 ；
All semiconductor materials adopted by the cathode contact layer, the anode contact layer, the electron blocking layer and the transition layer are lattice-matched with the InP substrate layer.
6. An InP-based ultra-wide spectrum photodetector as claimed in claim 5, wherein said cathode contact layer is formed of a semiconductor material of InGaAs; the semiconductor material adopted by the anode contact layer is InGaAs; the electron blocking layer is made of AlAsSb semiconductor material; the semiconductor material adopted by the transition layer is InAlAs.
7. A method for preparing an InP-based ultra-wide spectrum photodetector as claimed in any one of claims 1 to 5, comprising at least the following steps:
sequentially growing a cathode contact layer, an InGaAs/GaAsSb superlattice absorption layer, an InGaAs absorption layer, an InAlAs or InP transition layer, an electron blocking layer and an anode contact layer on the InP substrate layer by using a molecular beam epitaxy method or an organic metal chemical vapor deposition method;
titanium, platinum and gold are evaporated on the upper surface of the anode contact layer by using an electron beam evaporation technology to form an anode;
etching sequentially from the anode downwards by using dry etching or wet etching, wherein the etching surface is stopped in the cathode contact layer to form a columnar step protruding out of the cathode contact layer;
sequentially evaporating titanium, platinum and gold on the surface of the cathode contact layer by using an electron beam evaporation technology to form a cathode;
and on the anode contact layer, a groove window is formed by wet etching or dry etching to remove partial materials, so that the response of ultraviolet bands and visible bands is further enhanced.
8. A method of fabricating an InP-based ultra-wide spectrum photodetector as claimed in claim 7, further comprising the step of passivating the sidewalls of said columnar steps.
9. The method of claim 8, wherein a passivation layer is formed by passivating sidewalls of the pillar step, and a material of the passivation layer includes silicon nitride or silicon dioxide.
10. The method of claim 7, wherein the thickness of the anode is 20nm, 80 nm; the thicknesses of the titanium, the platinum and the gold of the cathode are respectively 20nm, 20nm and 80 nm.
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