CN114823942B - Semiconductor packaging structure and packaging method - Google Patents
Semiconductor packaging structure and packaging method Download PDFInfo
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- CN114823942B CN114823942B CN202210764171.6A CN202210764171A CN114823942B CN 114823942 B CN114823942 B CN 114823942B CN 202210764171 A CN202210764171 A CN 202210764171A CN 114823942 B CN114823942 B CN 114823942B
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Light Receiving Elements (AREA)
Abstract
The invention discloses a semiconductor packaging structure and a packaging method, and relates to the technical field of semiconductor packaging, wherein the semiconductor packaging structure comprises a substrate, a support, a semiconductor element, a light-transmitting part and a connecting part, wherein the substrate comprises a bottom plate and a side wall arranged around the bottom plate in an enclosing manner, the side wall and the bottom plate enclose an accommodating space, and the top surface and the bottom surface of the bottom plate are both provided with conducting layers; the bracket is positioned in the accommodating space and is arranged on the conductive layer on the top surface of the bottom plate, and the bracket is a conductive material part; the semiconductor element is arranged on the bracket; the light-transmitting part is covered on the substrate and comprises a light-transmitting part and a metal connecting piece arranged around the light-transmitting part in a surrounding way, and the bottom surface of the metal connecting piece is abutted to the top surface of the side wall; the connecting part is respectively connected with the side wall and the metal connecting piece, and the connecting part is positioned on the radial extension line of the light-transmitting piece and used for sealing the accommodating space. By adopting high-energy beam welding, the base plate does not need to be arranged in a high-temperature environment, the generation of a ventilation channel is avoided, and the sealing property of the accommodating space is ensured.
Description
Technical Field
The invention relates to the technical field of semiconductor packaging, in particular to a semiconductor packaging structure and a packaging method.
Background
The existing light-transmitting material is generally bonded with a main body through glue, and although the bonding is firm by adopting the glue, the sealing performance of the photoelectric device is easily influenced by the light environment, so that the glue is deteriorated; if the welding mode of the metal edge atmosphere of the light-transmitting material is adopted, the welding surface is usually positioned on the lower surface of the light-transmitting material, the semiconductor element is usually required to be placed in a high-temperature environment, and a ventilation channel is easily generated due to the pressure difference between the inside and the outside of the semiconductor packaging body during welding, so that the sealing performance is adversely affected.
Disclosure of Invention
The invention mainly aims to provide a semiconductor packaging structure and a packaging method, and aims to solve the technical problem of improving the sealing property of a semiconductor element.
In order to achieve the above object, the present invention provides a semiconductor package structure, including:
the substrate comprises a bottom plate and a side wall arranged around the bottom plate in an enclosing mode, the side wall and the bottom plate form an accommodating space in an enclosing mode, and the top surface and the bottom surface of the bottom plate are both provided with conducting layers;
the bracket is positioned in the accommodating space and is arranged on the conductive layer on the top surface of the bottom plate, and the bracket is made of a conductive material;
a semiconductor element mounted on the support;
the light-transmitting part is covered on the substrate and comprises a light-transmitting part and a metal connecting piece arranged around the light-transmitting part in a surrounding manner;
and the connecting parts are respectively connected with the side wall and the metal connecting piece and used for sealing the accommodating space.
In one embodiment, the side wall includes a base body and a connecting ring surrounding the periphery of the metal connecting member, the bottom surface of the metal connecting member is connected to the top surface of the base body, the connecting portion is located between the inner wall of the connecting ring and the outer wall of the metal connecting member, one side of the connecting portion is connected to the connecting ring, and the other side of the connecting portion is connected to the metal connecting member.
In one embodiment, the side wall is a metal part, the top surface of the side wall is connected with the bottom surface of the metal connecting piece, and the connecting part is formed by melting the metal connecting piece and the side wall part.
In an embodiment, the outer side of the side wall extends outwards relative to the outer wall of the metal connecting piece, so that the outer edge of the side wall and the outer edge of the metal connecting piece are arranged at intervals, and the connecting part is arranged around the outer side wall of the metal connecting piece.
In an embodiment, the outer edge of the side wall is aligned with the outer edge of the metal connecting piece, the top surface of the side wall is provided with a first groove, the first groove extends along the circumferential direction of the side wall, the metal connecting piece is provided with a second groove communicated with the first groove, and the connecting portion is located in the first groove and the second groove.
In one embodiment, the size of a cross section of the connecting part along the vertical direction in the horizontal direction is 50-500 μm, and the size of the cross section along the vertical direction is 0.1-500 μm.
In addition, the invention also provides a packaging method of the semiconductor packaging structure, which comprises the following steps:
providing a substrate, wherein the substrate comprises a bottom plate and a side wall arranged around the bottom plate in a surrounding manner, and an accommodating space is formed by the side wall and the bottom plate in a surrounding manner;
providing a semiconductor element, and mounting the semiconductor element in the accommodating space;
providing a light-transmitting part, wherein the light-transmitting part comprises a light-transmitting part and a metal connecting piece arranged around the light-transmitting part in a surrounding manner;
covering the light-transmitting part above the substrate, wherein the bottom surface of the metal connecting piece is abutted against the top surface of the side wall;
controlling a high-energy beam emitted by an emitter to move according to a preset track, wherein the high-energy beam acts on the metal connecting piece; so that the metal connecting piece and the side wall are locally fused and combined together to form a connecting part, and the connecting part is positioned on the radial extension line of the light-transmitting piece.
In one embodiment, the side wall includes a base body and a connecting ring surrounding the metal connecting member, the connecting ring is configured to control the emitter to emit a high-energy beam to move according to a predetermined trajectory, and the step of applying the high-energy beam to the metal connecting member includes:
and controlling the high-energy beam emitted by the emitter to move along the track between the metal connecting piece and the connecting ring.
In one embodiment, the outer side of the sidewall extends outward relative to the outer wall of the metal connecting member so that the outer edge of the sidewall is spaced apart from the outer edge of the metal connecting member, the control transmitter emits a high-energy beam moving according to a predetermined trajectory, and the step of applying the high-energy beam to the metal connecting member includes:
and controlling the high-energy beam emitted by the emitter to move along the outer edge of the metal connecting piece so that the high-energy beam irradiates the metal connecting piece and the side wall.
In one embodiment, the control transmitter emits a high-energy beam moving according to a predetermined trajectory, and the step of applying the high-energy beam to the metal connecting member includes:
and controlling the high-energy beam emitted by the emitter to be away from the edge of the metal connecting piece by a preset distance and move according to a preset track.
In the technical scheme of the invention, the light-transmitting part comprises the light-transmitting part and the metal connecting part arranged around the light-transmitting part, the metal connecting part is connected with the side wall through the connecting part, wherein the side wall can be a metal or ceramic part, if the side wall is a ceramic part, the side wall can be welded with the metal connecting part through metallization treatment on the edge of the ceramic part to form the connecting part, compared with the bonding by glue, the weather resistance of the connecting part formed through welding is stronger, so that the sealing property of the accommodating space can be effectively ensured; meanwhile, the metal connecting piece is arranged on the periphery of the light-transmitting piece, and the connecting part is positioned on the radial extension line of the light-transmitting piece, compared with the mode of welding the edge of the light-transmitting material in a metallization atmosphere in the prior art, the substrate and the light-transmitting piece are not required to be arranged in a high-temperature environment, the connecting part can be formed in a normal-temperature environment through high-energy beam welding to be used for connecting the metal connecting piece and the side wall, the generation of a ventilation channel caused by large pressure difference generated by a containing space due to the high-temperature environment is avoided, and the sealing performance of the containing space is improved.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the embodiments or the prior art descriptions will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is also possible for those skilled in the art to obtain other drawings in the structures shown according to the drawings without inventive efforts.
FIG. 1 is a schematic structural diagram of a semiconductor package structure according to a first embodiment of the present invention before being soldered;
FIG. 2 is a schematic structural diagram of a semiconductor package structure after completing soldering according to a first embodiment of the present invention;
FIG. 3 is a schematic structural diagram of a semiconductor package structure according to a second embodiment of the present invention before being soldered;
FIG. 4 is a schematic structural diagram of a semiconductor package structure after completing soldering according to a second embodiment of the present invention;
FIG. 5 is a schematic structural diagram of a semiconductor package structure according to a third embodiment of the present invention before being soldered;
FIG. 6 is a schematic structural view of a semiconductor package structure according to a third embodiment of the present invention after the bonding process is completed;
FIG. 7 is a schematic diagram of the light path of the light reflected by the reflecting surface according to the embodiment of the invention;
FIG. 8 is a schematic structural diagram of a transparent component according to an embodiment of the present invention;
FIG. 9 is a schematic structural diagram of a transparent component according to another embodiment of the present invention;
FIG. 10 is a schematic diagram of an optical path of a semiconductor device as an emitting end according to an embodiment of the present invention;
FIG. 11 is a schematic diagram of an optical path of a semiconductor device as a receiving end according to another embodiment of the present invention;
FIG. 12 is a schematic structural diagram of a transparent component according to an embodiment of the invention;
FIG. 13 is a schematic structural diagram of a transparent member according to another embodiment of the present invention;
FIG. 14 is a schematic structural diagram of a transparent member according to another embodiment of the present invention;
fig. 15 is a flowchart illustrating a packaging method of a semiconductor package structure according to an embodiment of the invention.
The reference numbers illustrate:
| 1 | |
11 | |
| 111 | |
112 | |
| 113 | |
114 | Connecting |
| 12 | |
13 | Semiconductor device with a plurality of |
| 14 | Light-transmitting |
141 | |
| 142 | |
15 | Connecting |
| 16 | Through |
17 | The |
| 18 | |
19 | Reflecting |
| 2 | |
21 | |
| 22 | Sign slot |
The implementation, functional features and advantages of the present invention will be further explained with reference to the accompanying drawings.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is apparent that the described embodiments are only some embodiments of the present invention, and not all embodiments. All other embodiments, which can be obtained by a person skilled in the art without any inventive step based on the embodiments of the present invention, are within the scope of the present invention.
It should be noted that all the directional indications (such as up, down, left, and right) in the embodiment of the present invention are only used to explain the relative position relationship between the components, the motion situation, and the like in a specific posture (as shown in fig. 2), and if the specific posture is changed, the directional indication is changed accordingly.
In addition, the descriptions related to "first", "second", etc. in the present invention are only for descriptive purposes and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" can include at least one of that feature either explicitly or implicitly.
Moreover, the technical solutions between the embodiments of the present invention can be combined with each other, but it is necessary to be based on the realization of those skilled in the art, and when the technical solutions are contradictory or cannot be realized, the combination of the technical solutions should be considered to be absent, and is not within the protection scope of the present invention.
The invention provides a semiconductor packaging structure 1, as shown in fig. 1-6, the semiconductor packaging structure 1 comprises a substrate 11, a bracket 12, a semiconductor element 13, a light-transmitting component 14 and a connecting part 15, wherein the substrate 11 comprises a bottom plate 111 and a side wall 112 surrounding the bottom plate 111, the side wall 112 and the bottom plate 111 surround to form an accommodating space, and the top surface and the bottom surface of the bottom plate 111 are both provided with a conductive layer; the bracket 12 is located in the accommodating space and mounted on the conductive layer on the top surface of the bottom plate 111, and the bracket 12 is made of a conductive material, wherein the conductive material may be one or more of Ti, cu, ag, au and alloys thereof; the semiconductor element 13 is mounted on the support 12; the transparent member 14 is covered on the substrate 11, the transparent member 14 includes a transparent member 141 and a metal connector 142 surrounding the transparent member 141, the bottom surface of the metal connector 142 is abutted against the top surface of the sidewall 112, and the transparent member 14 is kept parallel to the substrate 11, or in a special case, the transparent member 14 and the substrate may have a certain angle, especially on the orientation receiving sensor package. The connecting portion 15 is connected to the sidewall 112 and the metal connecting member 142, the connecting portion 15 is located on a radial extension line of the light-transmitting member 141 to close the accommodating space, the connecting portion 15 is formed by melting a part of metal of the metal connecting member 142 and a part of metal of the base 113 or the connecting ring 114, generally, the width of the connecting portion 15 is 50 μm to 500 μm, the depth of the connecting portion 15 is 0.1 μm to 500 μm, and the depth is greater than the thickness of the metal connecting member 142 and less than the thickness of the sidewall 112.
The semiconductor element 13 may be a semiconductor element bare chip or may be a Package PKG (Package Substrate). The light-transmitting component 14 includes a light-transmitting component 141 and a metal connecting component 142 surrounding the light-transmitting component 141, and the metal connecting component 142 is connected to the sidewall 112 through a connecting component 15, where the sidewall 112 may be a metal or ceramic component, and if the sidewall 112 is a ceramic component, the edge of the sidewall may be metalized and then welded to the metal connecting component 142 to form the connecting component 15, compared with bonding with glue, the connecting component 15 formed by welding has higher bonding strength and stronger weather resistance, so that the sealing performance of the accommodating space can be effectively ensured; meanwhile, since the metal connecting member 142 is disposed at the periphery of the light-transmitting member 141 and the connecting portion 15 is located on the radial extension line of the light-transmitting member 141, compared to the prior art that the light-transmitting material is welded in the atmosphere of metal edge, the present invention does not need to place the Substrate 11 in a high temperature environment, and the connecting portion 15 can be formed by welding the high-energy Beam 2 in a normal temperature environment to connect the metal connecting member 142 and the sidewall 112, thereby avoiding generation of a ventilation channel due to a large pressure difference in the receiving space caused by the high temperature environment, and facilitating improvement of the sealing property of the receiving space, wherein the high-energy Beam 2 can be a laser Beam failure (LBM), an Electron Beam welding (EBM), a resistance welding, or the like The material having high infrared transmittance, such as optical glass, fluorine glass, quartz glass, sapphire, etc., but not limited thereto, may be provided with an antireflection film and a reflection preventing film on the light-transmitting member 141 in order to improve light extraction efficiency. The metal connector 142 may be one or more of a stainless steel connector, an expansion alloy connector, cu, fe, al, ni, mo, ti, co, and an alloy thereof, but is not limited thereto. It should be noted that, a solder layer is disposed on a side of the metal connecting element 142 facing the light-transmitting element 141, wherein the solder layer may be a glass solder layer or an oxide solder layer. It should be noted that, the side of the light-transmitting member 141 away from the semiconductor element 13 is an arc surface, the arc surface protrudes in the direction away from the semiconductor element 13, as shown in fig. 10, the surface of the light-transmitting member 141 facing the semiconductor element 13 may be a plane surface, as shown in fig. 11, or a curved surface protruding in the direction of the semiconductor element 13, so that when the semiconductor element 13 is used as a receiving end element, light passes through the light-transmitting member 141 from the outside of the light-transmitting member 141, and when the light enters the semiconductor element 13, the light-transmitting member 141 gathers and collects the light, and when the semiconductor element 13 is used as an emitting end element, the light is emitted from the semiconductor element 13, passes through the light-transmitting member 141, and exits to the outside of the light-transmitting member 141, and the light-transmitting member 141 plays a role of diverging the light.
In addition, the sidewall 112 may be composed of a single layer structure, and the sidewall 112 may be composed of a multi-layer structure; the sidewall 112 may be made of ceramic, the surface of the ceramic is metalized, and the sidewall may be made of metal, wherein the metal may be one or more of Fe, cu, al, ag, au, ni, and their alloys, but is not limited thereto, and may be selected according to the principle that the expansion coefficient is matched with the substrate 11 and the metal connecting member 142. The thickness of the side wall 112 is generally 0.05mm to 2mm, and the width of the side wall 112 is generally 0.05mm to 2mm.
According to an embodiment of the present invention, the semiconductor package structure 1 further includes a first protection layer covering the periphery of the metal connecting element 142 and the sidewall 112, so as to improve the weather resistance of the metal connecting element 142 and the sidewall 112. The first protective layer can be nickel, gold, chromium, nickel-gold alloy or three-proofing resin.
According to another embodiment of the present invention, the bottom plate 111 is provided with a through hole 16, and the through hole 16 is filled with a filler, so that the conductive layer on the top surface of the bottom plate 111 is electrically connected to the conductive layer on the bottom surface of the bottom plate 111, thereby connecting the package body to an external circuit. The conductive layer may be a nickel-plated layer, a palladium-plated layer, a gold-plated layer, a titanium-plated layer, a silver-plated layer, a copper-plated layer, a tungsten-plated layer, a molybdenum-plated layer, or an alloy thereof, but is not limited thereto. The number of the conductive layers may be multiple, multiple conductive layers above or below the bottom plate 111 may be sequentially stacked, the support 12 is mounted on the uppermost conductive layer and electrically connected to the uppermost conductive layer, and the semiconductor element 13 soldered on the support 12 may be a chip in a forward mounting structure, a chip in a flip-chip structure or a chip in a vertical structure, or a PKG to be protected. The through hole 16 is for dissipating heat, and when the filler is made of a conductive material, the filler in the through hole 16 conducts electricity. It should be noted that, when the bottom plate 111 is made of an insulating material, the filler is made of a conductive material, wherein the filler may be a silver rod, the size of the silver rod is adapted to the size of the through hole 16, so that the silver rod fills the through hole 16, and the filler may also be a copper plating layer, and the copper plating layer covers the hole wall of the through hole 16; when the bottom plate 111 is made of a conductive material, the filler is made of an insulating material. It should be noted that the number of the through holes 16 is at least 2, and the number of the through holes 16 may be set according to the magnitude of the current actually flowing through the conductive layer.
As shown in fig. 1 and 2, the side wall 112 includes a base 113 connected to each other and a connection ring 114 surrounding the outer periphery of the metal connector 142, the bottom surface of the metal connector 142 is connected to the top surface of the base 113, the connection portion 15 is located between the inner wall of the connection ring 114 and the outer wall of the metal connector 142, one side of the connection portion 15 is connected to the connection ring 114, and the other side of the connection portion 15 is connected to the metal connector 142. The height of the base 113 is 0.2mm-1.0 mm, if the height of the base 113 is less than 0.2mm, the height of the semiconductor element 13 is higher than the height of the base 113, so that the metal connecting piece 142 cannot be welded with the base 113, and if the height of the base 113 is more than 1.0mm, the light extraction efficiency is affected. The connecting ring 114 is arranged to assist the transparent part 14 in positioning, so that the transparent part 14 can be conveniently and accurately covered above the substrate 11, and meanwhile, the connecting ring 114 can also effectively limit the transparent part 14, thereby preventing the metal connecting piece 142 from deviating from the original position in the welding process of the connecting ring 114 to cause the phenomenon that the transparent part 14 cannot seal the accommodating space. It should be noted that the base 113 and the connection ring 114 may be made of different materials, and the connection ring 114 may be an iron connection ring, a cobalt connection ring, a nickel connection ring, a silver connection ring, a stainless steel connection ring, a copper connection ring, an aluminum connection ring, or an alloy connection ring, but is not limited thereto. It should also be noted that the connection portion 15 is formed by partially melting the metal connecting member 142 and the connection ring 114. It is also noted that the sidewall 112 may be a one-piece metal; the sidewall 112 may also be a metal piece formed by stacking multiple metal layers; in addition, the sidewall 112 may further include a ceramic core and a plurality of metal plating layers covering an outer surface of the ceramic core.
According to an embodiment of the present invention, as shown in fig. 12, the metal connection element 142 is provided with a third groove 21, the third groove 21 extends along the circumferential direction of the metal connection element 142, and by reducing the cross section, the conduction of the welding heat to the connection interface between the light-transmitting element 141 and the metal connection element 142 can be effectively reduced, and the occurrence of the bonding failure of the two dissimilar materials of the light-transmitting element 141 and the metal connection element 142 due to the difference of the expansion coefficients can be avoided. It should be noted that the third groove 21 may be disposed on a side of the metal connecting member 142 away from the semiconductor element 13, and the third groove 21 may also be disposed on a side of the metal connecting member 142 close to the semiconductor element 13. As shown in fig. 13 and 14, the cross-sectional shape of the third groove 21 may be rectangular, hemispherical, triangular, trapezoidal, polygonal, or the like. Wherein, the depth of the third groove 21 is d2, the thickness of the metal connecting piece 142 is d1, d2 is more than 0 and less than or equal to 0.6d1. The third groove 21 may be formed on the upper surface or the lower surface of the metal link 142.
According to another embodiment of the present invention, the side of the metal connecting member 142 away from the semiconductor element 13 is further provided with the mark groove 22, and the mark groove 22 can be used to determine the polarity of the metal connecting member 142 according to the position of the mark groove 22 when the light-transmitting member 14 is mounted, thereby preventing the occurrence of mismounting.
As shown in fig. 7, the bottom surface of the portion of the metal connector 142 located in the accommodating space is provided with a reflective surface 19 for reflecting the light emitted from the semiconductor element 13, thereby increasing the intensity of the light emitted from the light-transmitting member 141.
As shown in fig. 3 to 6, the side wall 112 is made of metal, the top surface of the side wall 112 is connected to the bottom surface of the metal connecting member 142, and the connecting portion 15 is formed by partially melting the metal connecting member 142 and the side wall 112. Under the action of the high-energy beam 2, the partially melted metal connecting member 142 and the partially melted side wall 112 are melted to form an alloy, which is the connecting portion 15, and the alloy has the characteristics of high strength and good corrosion resistance, so that the connecting portion 15 has good weather resistance.
As shown in fig. 3 and 4, the outer side of the sidewall 112 extends outward relative to the outer wall of the metal connecting member 142, so that the outer edge of the sidewall 112 is spaced apart from the outer edge of the metal connecting member 142, and the connecting portion 15 surrounds the outer sidewall 112 of the metal connecting member 142. Connecting portion 15 is located metal connecting piece 142's lateral wall 112, and the lower surface of connecting portion 15 is connected with the top surface of lateral wall 112, and connecting portion 15 can directly be observed, consequently can directly observe connecting portion 15's outward appearance, is favorable to handling the accuse to welding quality, avoids because the emergence of the poor problem of leakproofness that the welding quality is poor and lead to.
According to an embodiment of the present invention, the semiconductor package structure 1 further includes a second passivation layer covering the connection portion 15 and the periphery of the first passivation layer, and the second passivation layer is made of waterproof material such as silica gel, resin, epoxy, fluorine resin or three-proofing adhesive, so as to enhance the sealing performance of the semiconductor package structure 1.
As shown in fig. 5 and 6, the top surface of the sidewall 112 is formed with a first groove 17, the first groove 17 extends along the circumferential direction of the sidewall 112, the metal connecting member 142 is formed with a second groove 18 communicated with the first groove 17, and the connecting portion 15 is located in the first groove 17 and the second groove 18. Wherein the high temperature melts the metal connecting piece 142 and part of the side wall 112 by the action of the high energy beam 2 on the metal connecting piece 142, forming a molten metal pool accommodated in the first recess 17 and the second recess 18, which molten metal pool forms the connection 15 after cooling. The connection portion 15 is located in the first groove 17 and the second groove 18 to connect the metal connecting member 142 and the side wall 112, so that the contact area between the connection portion 15 and the metal connecting member 142 and the side wall 112 can be increased by adjusting the size of the first groove 17 and the second groove 18, thereby improving the connection strength between the connection portion 15 and the metal connecting member 142, and improving the connection strength between the connection portion 15 and the side wall 112. It should be noted that the outer edge of the sidewall 112 and the outer edge of the metal connecting member 142 may be aligned, or the outer edge of the sidewall 112 and the outer edge of the metal connecting member 142 are spaced apart, i.e., the outer edge of the sidewall 112 is in the outer direction of the outer edge of the metal connecting member 142.
Wherein the size of the cross section of the connecting part 15 along the vertical direction is 50-500 μm in the horizontal direction, and the size of the cross section along the vertical direction is 0.1-500 μm. The horizontal direction is the left-right direction shown in fig. 2, the vertical direction is the up-down direction shown in fig. 2, the horizontal direction is the first direction, the vertical direction is the second direction, if the extension size of the connecting portion 15 along the first direction is less than 50 μm, the connecting portion 15 is not easy to form a complete integral structure, if the extension size of the connecting portion along the first direction is more than 500 μm, the area of the light-transmitting member 141 is reduced, if the extension size of the connecting portion 15 along the second direction is less than 0.1 μm, the connecting portion 15 is not easy to form a complete integral structure, and if the extension size of the connecting portion 15 along the second direction is more than 500 μm, the side wall 112 may be affected, and the supporting function of the side wall 112 is weakened.
In addition, the invention also provides a packaging method of the semiconductor packaging structure, which comprises the following steps:
s10, providing a substrate, wherein the substrate comprises a bottom plate and a side wall arranged around the bottom plate in an enclosing mode, and an accommodating space is formed by the side wall and the bottom plate in an enclosing mode;
thereby set up the lateral wall around the bottom plate and enclose into accommodation space, can be used for holding support and semiconductor element in the accommodation space, the bottom surface and the top surface of bottom plate all are provided with the conducting layer, and the support is connected with the conducting layer electricity of bottom plate top surface, and semiconductor element's electrode welding is on the support, through setting up the lateral wall, can guide the light that semiconductor element sent to gather together. It should be noted that, the side wall may be a one-piece metal part; the side wall can also be a metal part formed by stacking a plurality of metal layers; in addition, the side wall can also comprise a ceramic inner core and a plurality of metal coatings covering the outer surface of the ceramic inner core. The side wall can be composed of a single-layer structure, and the side wall can be composed of a multi-layer structure; the side wall can be made of ceramic, the surface of the ceramic is metalized, and the side wall can be made of metal, wherein the metal can be one or more of Fe, cu, al, ag, au, ni and alloys thereof, and can be selected according to the principle that the expansion coefficient is matched with the substrate and the metal connecting piece. The thickness of the side wall is generally 0.05mm to 2mm, and the width of the side wall 112 is generally 0.05mm to 2mm.
S20, providing a semiconductor element, and installing the semiconductor element in the accommodating space;
s30, providing a light-transmitting part, wherein the light-transmitting part comprises a light-transmitting part and a metal connecting piece arranged around the light-transmitting part in a surrounding manner;
the light-transmitting member may be made of a material having high transmittance in X-Ray, ultraviolet, visible light, and infrared, such as optical glass, fluorine-based glass, quartz glass, and sapphire, but is not limited thereto. The metal connecting member is made of metal material, such as one or more of stainless steel, expansion alloy, copper or copper alloy, gold, tin, titanium, etc., but not limited thereto. One side of the light-transmitting piece far away from the semiconductor element is an arc surface, the arc surface protrudes towards the direction far away from the semiconductor element, the surface of the light-transmitting piece facing one side of the semiconductor element can be a plane and also can be a curved surface protruding towards the direction of the semiconductor element, so that when the semiconductor element is used as a receiving end element, light passes through the light-transmitting piece from the outer side of the light-transmitting piece, when the light enters the semiconductor element, the light-transmitting piece plays a role in gathering and collecting the light, when the semiconductor element is used as a transmitting end element, the light is emitted from the semiconductor element and passes through the light-transmitting piece, the light is emitted to the outer side of the light-transmitting piece, and the light-transmitting piece plays a role in dispersing the light. It should be noted that, when the temperature of the light-transmitting member is higher than 400 ℃, defects such as cracking, peeling, falling and the like are easily caused due to mismatch of expansion coefficients, so a high-energy beam pulse scanning mode needs to be adopted, the high-energy beam moves according to a preset track, the preset track can be a program stored or edited in equipment software in advance according to actual requirements, a molten pool is formed in a single point of an irradiation area of the high-energy beam, heat can be rapidly dissipated, heat cannot be accumulated, and phenomena such as cracking, peeling, falling and the like caused by imbalance of the expansion coefficients at a joint of the light-transmitting member and the metal connecting member cannot be caused. It should also be noted that the transparent member may be held parallel to the substrate or, in special cases, may be angled, particularly in an orientation-receiving sensor package.
S40, covering the light-transmitting component above the substrate, and enabling the bottom surface of the metal connecting piece to be abutted against the top surface of the side wall;
the top surface of lateral wall and metal connecting piece's bottom surface butt, the lateral wall provides reliable support for metal connecting piece to improve the stability of light-transmitting part.
S50, controlling a high-energy beam emitted by the emitter to move according to a preset track, wherein the high-energy beam acts on the metal connecting piece; so that the metal connecting piece and the side wall are locally fused and combined together to form a connecting part, and the connecting part is positioned on the radial extension line of the light-transmitting piece.
The high-energy beam moves according to a preset track, wherein the preset track can be a program stored or edited in equipment software in advance according to actual requirements, and the high-energy beam emitted by the emitter can be a laser beam, an electron beam, an ion beam, an electric spark, ultrahigh frequency induction impact, solar energy, synchronous radiation and the like. Wherein the high energy beam moving according to the preset track can move the emitter to make the high energy beam emitted by the emitter move along the preset track; the reflector can be additionally arranged, the high-energy beam emitted by the emitter is reflected to the metal connecting piece through the reflector, and the reflector is rotated, so that the high-energy beam reflected by the reflector moves according to a preset track. The invention adopts high-energy beams for welding. The size of the connection part extending along the first direction is 50-500 μm, and the size of the connection part extending along the second direction perpendicular to the first direction is 0.1-500 μm. If the size of the connection portion extending along the first direction is less than 50 μm, the connection portion may not easily form a complete integral structure, if the size of the connection portion extending along the first direction is greater than 500 μm, the area of the light-transmitting member may be reduced, if the size of the connection portion extending along the second direction is less than 0.1 μm, the connection portion may not easily form a complete integral structure, and if the size of the connection portion extending along the second direction is greater than 500 μm, the side wall may be affected, and the supporting function of the side wall may be weakened.
In the above embodiments of the present invention, as shown in fig. 1 to 6 and 10, the metal connecting member is connected around the light-transmitting member, so that the metal connecting member can be supported by the side wall to support the light-transmitting member, and compared with performing metallization processing on the edge of the light-transmitting member, on the one hand, the side wall cannot provide reliable support for the light-transmitting member through the metal edge of the light-transmitting member; on the other hand, the light-transmitting piece subjected to edge metallization is easy to crack in the welding process of the light-transmitting piece and the side wall, and the sealing performance of the accommodating space is affected. And through connecting metal connecting piece around the light-transmitting piece, weld through metal connecting piece and lateral wall, can effectively avoid the emergence of above-mentioned problem, improved accommodation space's leakproofness. Compared with the prior art, the invention adopts the mode of welding the transparent material in the edge atmosphere, can complete welding in normal temperature atmosphere, protective gas or vacuum environment, the high-energy beam moves according to the preset track in the mode of pulse scanning, a molten pool is formed at a single point, heat can be rapidly dissipated, heat cannot be accumulated, even if pressure difference exists between the accommodating space and the external environment, expanded gas can enter the external environment from the position where the connecting part is not formed, and therefore, a ventilation channel cannot be generated. If the metal connecting piece and the side wall are poor in weather resistance, a first protective layer can be additionally arranged on the periphery of the metal connecting piece and the side wall, and the first protective layer can be a nickel-gold plating layer, a chromium plating layer, a three-proofing resin layer and the like.
In addition, according to an embodiment of the present invention, the high energy beam emitted from the emitter is controlled to move according to a predetermined trajectory, and the high energy beam acts on the metal connecting member; the step of locally melting and bonding the metal connecting piece and the side wall together to form the connecting part comprises the following steps: the high-energy beam emitted by the control emitter moves to a preset point position to be welded to form a fixed point, and then the high-energy beam moves according to a preset track. Through welding of the preset points, the metal connecting piece and the side wall are subjected to prepositioning through the fixing points, and the situation that relative movement of opposite side walls of the light-transmitting part in the subsequent welding process influences the sealing performance of the accommodating space is avoided. Wherein the preset trajectory may or may not pass through a fixed point.
In a first embodiment, the sidewall includes a base body and a connecting ring surrounding the metal connecting member, the base body and the connecting ring are connected with each other, the high-energy beam emitted from the emitter is controlled to move according to a preset track, and the step of applying the high-energy beam to the metal connecting member includes: the high-energy beam emitted by the control emitter moves along the track between the metal connecting piece and the connecting ring. Under the action of the high-energy beam, a part of the metal connecting piece and a part of the connecting ring start to melt at the same time to form a molten pool, the molten metal connecting piece and the molten connecting ring form an alloy, and the alloy forms a connecting part after solidification, so that the accommodating space is sealed. The height of the base is 0.2mm-1.0 mm, if the height of the base is less than 0.2mm, the height of the semiconductor element is higher than that of the base, so that the metal connecting piece cannot be welded with the base, and if the height of the base is more than 1.0mm, the light extraction efficiency is influenced.
In a second embodiment, the outer side of the sidewall extends outwards relative to the outer wall of the metal connecting member, so that the outer edge of the sidewall and the outer edge of the metal connecting member are arranged at intervals, the high-energy beam emitted by the emitter is controlled to move according to a preset track, and the step of acting the high-energy beam on the metal connecting member comprises: the high-energy beam emitted by the control emitter moves along the outer edge of the metal connecting piece, so that the high-energy beam irradiates on the metal connecting piece and the side wall. Connecting portion are located metal connecting piece's lateral wall, and the lower surface of connecting portion is connected with the top surface of lateral wall, and connecting portion can directly be observed, consequently can the direct observation to the quality of connecting portion 15, is favorable to carrying out the control to welding quality.
In a third embodiment, the outer edge of the sidewall is aligned with the outer edge of the metal connecting member, or the outer edge of the sidewall is spaced from the outer edge of the metal connecting member, that is, the outer edge of the sidewall is located outside the outer edge of the metal connecting member, and the high-energy beam emitted from the emitter is controlled to move according to a predetermined trajectory, wherein the step of the high-energy beam acting on the metal connecting member includes: and controlling the high-energy beam emitted by the emitter to be away from the edge of the metal connecting piece by a preset distance and move according to a preset track. The method comprises the following steps that a preset distance between a high-energy beam and the edge of a metal connecting piece can be a program stored or edited in equipment software according to actual requirements in advance, in the high-energy beam welding process, the metal connecting piece forms a first groove, a second groove is formed in the side wall of the metal connecting piece, the section of a connecting part is a conical section, and the first groove and the second groove are filled with the connecting part.
In addition, according to an embodiment of the present invention, the high energy beam emitted from the emitter is controlled to move according to a predetermined trajectory, and the high energy beam acts on the metal connecting member; the step of locally melting and bonding the metal connecting piece and the side wall together to form the connecting part comprises the following steps: and a second protective layer is added on the outer surfaces of the metal connecting piece, the connecting part and the side wall after welding. After the welding is accomplished, welding process can carry out certain destruction to first protective layer, consequently can increase the second protective layer and protect, and the second protective layer can adopt the mode coating silica gel, resin or other bonding material of rack-plating or barrel-plating, also can be waterproof material, through adding the second protective layer of establishing, has further strengthened accommodation space's leakproofness.
Furthermore, according to another embodiment of the present invention, the metal connecting member is provided with a third groove, and the third groove extends along a circumferential direction of the metal connecting member, so that heat generated during high energy beam welding can be conducted rightward along the first direction, that is, towards a direction away from the light transmitting member, so as to reduce heat conducted towards the direction of the light transmitting member, thereby ensuring connection reliability between the light transmitting member and the metal connecting member. It should be noted that the third groove may be disposed on a side of the metal connecting member away from the semiconductor element, and the third groove may also be disposed on a side of the metal connecting member close to the semiconductor element. It should be noted that the cross-sectional shape of the third groove may be rectangular, hemispherical, triangular trapezoid or polygonal. Wherein the depth of the third groove is d2, the thickness of the metal connecting piece is d1, and d2 is more than 0 and less than or equal to 0.6d1.
Furthermore, according to another embodiment of the present invention, an identification groove is further disposed on a side of the metal connecting member away from the semiconductor device, and the identification groove can be used to determine the polarity of the metal connecting member according to the position of the identification groove when the light-transmitting member is mounted, so as to prevent the occurrence of incorrect mounting.
The above description is only a preferred embodiment of the present invention, and not intended to limit the scope of the present invention, and all modifications and equivalents of the present invention, which are made by the contents of the present specification and the accompanying drawings, or directly/indirectly applied to other related technical fields, are included in the scope of the present invention.
Claims (3)
1. A semiconductor package structure, comprising:
the substrate comprises a bottom plate and a side wall arranged around the bottom plate in an enclosing mode, the side wall and the bottom plate form an accommodating space in an enclosing mode, and the top surface and the bottom surface of the bottom plate are both provided with conducting layers;
the bracket is positioned in the accommodating space and is arranged on the conductive layer on the top surface of the bottom plate, and the bracket is made of a conductive material;
a semiconductor element mounted on the support;
the light-transmitting part is covered on the substrate and comprises a light-transmitting part and a metal connecting piece arranged around the light-transmitting part in a surrounding manner, and the bottom surface of the metal connecting piece is abutted to the top surface of the side wall; the metal connecting piece is provided with a third groove which extends along the circumferential direction of the metal connecting piece;
the connecting part is respectively connected with the side wall and the metal connecting piece, and the connecting part is positioned on a radial extension line of the light-transmitting piece and used for sealing the accommodating space;
the side wall comprises mutually connected base bodies and connecting rings arranged around the periphery of the metal connecting piece in a surrounding mode, the bottom face of the metal connecting piece is connected with the top face of the base body, the connecting portion is located between the inner wall of the connecting rings and the outer wall of the metal connecting piece, one side of the connecting portion is connected with the connecting rings, and the other side of the connecting portion is connected with the metal connecting piece.
2. The semiconductor package structure according to claim 1, wherein a cross section of the connection portion along a vertical direction has a size of 50 μm to 500 μm in a horizontal direction, and the size of the cross section in the vertical direction is 0.1 μm to 500 μm.
3. A packaging method of a semiconductor packaging structure is characterized by comprising the following steps:
providing a substrate, wherein the substrate comprises a bottom plate and a side wall which is arranged around the bottom plate in a surrounding mode, the side wall comprises a base body and a connecting ring which are connected with each other, and an accommodating space is formed by the side wall and the bottom plate in a surrounding mode;
providing a semiconductor element, and mounting the semiconductor element in the accommodating space;
providing a light-transmitting part, wherein the light-transmitting part comprises a light-transmitting part and a metal connecting piece arranged around the light-transmitting part in a surrounding manner, and the connecting ring is arranged around the metal connecting piece in a surrounding manner;
covering the light-transmitting component above the substrate, wherein the bottom surface of the metal connecting piece is abutted against the top surface of the base body;
controlling a high-energy beam emitted by an emitter to move along a track between the metal connecting piece and the connecting ring; so that the metal connecting piece and the connecting ring are locally fused together to form a connecting part, and the connecting part is positioned on the radial extension line of the light-transmitting piece.
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| EP3665727A4 (en) * | 2018-04-28 | 2020-07-22 | SZ DJI Technology Co., Ltd. | Light detection and ranging sensors with multiple emitters and multiple receivers, and associated systems and methods |
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| TWM602286U (en) * | 2019-05-28 | 2020-10-01 | 葳天科技股份有限公司 | Semiconductor component package body |
| CN110660894A (en) * | 2019-11-08 | 2020-01-07 | 徐伟元 | Lens structure for LED packaging and LED packaging structure thereof |
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