CN114823457A - Bearing device, semiconductor processing equipment and using method of bearing device - Google Patents
Bearing device, semiconductor processing equipment and using method of bearing device Download PDFInfo
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- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
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Abstract
Description
技术领域technical field
本申请涉及半导体技术领域,更具体而言,涉及一种承载装置、半导体处理设备及承载装置的使用方法。The present application relates to the field of semiconductor technology, and more particularly, to a carrier device, semiconductor processing equipment, and a method for using the carrier device.
背景技术Background technique
目前,半导体工件由于工艺及使用需求不同,半导体工件的厚度在几十到几百微米之间不等,当工件厚度比较薄时,其由于制造工艺很容易产生比较大的翘曲,且因为其自身厚度比较薄,放置在承载装置上时,由于重力作用也会产生较大下垂形变。例如对有图案晶圆背面进行处理时,由于有图案晶圆正面已有工艺图形不可以接触承载装置,无法大面积吸附晶圆正面以对有图案晶圆背面进行处理。这样的承载装置无法保证半导体工件的平整度,从而影响半导体工件的处理精度。At present, the thickness of semiconductor workpieces varies from tens to hundreds of microns due to different processes and usage requirements. When the thickness of the workpiece is relatively thin, it is easy to produce relatively large warpage due to the manufacturing process, and because of its Its own thickness is relatively thin, and when placed on the bearing device, a large sagging deformation will occur due to the action of gravity. For example, when processing the backside of the patterned wafer, the front side of the patterned wafer cannot be contacted with the carrier device due to the existing process pattern, and the front side of the wafer cannot be adsorbed in a large area to process the backside of the patterned wafer. Such a carrier device cannot guarantee the flatness of the semiconductor workpiece, thereby affecting the processing accuracy of the semiconductor workpiece.
发明内容SUMMARY OF THE INVENTION
本申请实施方式提供一种承载装置、半导体处理设备及承载装置的使用方法。Embodiments of the present application provide a carrier device, a semiconductor processing equipment, and a method for using the carrier device.
本申请实施方式的承载装置包括承载件及调整件。所述承载件设有凹槽,所述凹槽的侧壁包括承载面,所述承载面设有第一吸附单元,所述第一吸附单元用于将工件的第一区吸附于所述承载面,所述凹槽与所述工件的第二区对应,所述凹槽的底壁与所述工件的第二区间隔;所述调整件包括第二吸附单元,所述第二吸附单元用于吸附所述工件以使所述工件的平整度在预设范围内,所述调整件能够移动以使所述工件夹设在所述承载件与所述调整件之间。The carrying device of the embodiment of the present application includes a carrying member and an adjusting member. The carrier is provided with a groove, the side wall of the groove includes a bearing surface, and the bearing surface is provided with a first adsorption unit, and the first adsorption unit is used to adsorb the first area of the workpiece on the carrier surface, the groove corresponds to the second area of the workpiece, and the bottom wall of the groove is spaced from the second area of the workpiece; the adjustment member includes a second adsorption unit, and the second adsorption unit uses In order to adsorb the workpiece so that the flatness of the workpiece is within a preset range, the adjustment member can move so that the workpiece is sandwiched between the carrier and the adjustment member.
在某些实施方式中,所述调整件与所述承载件同轴设置。In some embodiments, the adjustment member is disposed coaxially with the carrier member.
在某些实施方式中,在所述工件夹设在所述承载件与所述调整件之间时,所述工件与所述承载件之间形成密封的腔体。In some embodiments, when the workpiece is sandwiched between the carrier and the adjustment element, a sealed cavity is formed between the workpiece and the carrier.
在某些实施方式中,所述第一吸附单元包括设置在所述承载面的环形的第一气槽。In some embodiments, the first adsorption unit includes an annular first air groove disposed on the bearing surface.
在某些实施方式中,所述第一吸附单元包括多个第一气孔,多个所述第一气孔相互间隔并均匀地分布在所述承载面。In some embodiments, the first adsorption unit includes a plurality of first air holes, and the plurality of first air holes are spaced apart from each other and evenly distributed on the bearing surface.
在某些实施方式中,所述承载装置包括第一驱动件和/或第二驱动件。所述第一驱动件用于驱动所述调整件移动和/或转动;所述第二驱动件用于驱动所述承载件移动和/或转动。In certain embodiments, the carrier device includes a first drive member and/or a second drive member. The first driving member is used for driving the adjusting member to move and/or rotate; the second driving member is used for driving the carrier member to move and/or rotate.
在某些实施方式中,所述第二吸附单元包括设置在所述调整件的多个环形的第二气槽,每个所述第二气槽同心。In some embodiments, the second adsorption unit includes a plurality of annular second air grooves disposed on the adjustment member, and each of the second air grooves is concentric.
在某些实施方式中,所述第二吸附单元包括多个第二气孔,多个所述第二气孔相互间隔并均匀地分布。In some embodiments, the second adsorption unit includes a plurality of second air holes, and the plurality of second air holes are spaced apart from each other and evenly distributed.
在某些实施方式中,所述调整件为多孔陶瓷结构,所述第二吸附单元包括所述多孔陶瓷结构的多个第二气孔。In some embodiments, the adjustment member is a porous ceramic structure, and the second adsorption unit includes a plurality of second pores of the porous ceramic structure.
在某些实施方式中,所述凹槽呈圆形,所述承载面对应工件的第一区。In some embodiments, the groove is circular, and the bearing surface corresponds to the first area of the workpiece.
在某些实施方式中,所述凹槽的数量为多个,自所述承载件的中心至周缘依次形成尺寸逐渐增大的多个所述凹槽,多个不同尺寸的所述工件能够承载在多个所述凹槽的承载面上,最大尺寸之外的所述凹槽位于前一较大尺寸的所述凹槽的底面;所述调整件的数量为多个,每个所述调整件对应一个所述凹槽的承载面。In some embodiments, the number of the grooves is multiple, and a plurality of the grooves with gradually increasing sizes are formed sequentially from the center to the periphery of the carrier, and a plurality of the workpieces of different sizes can be supported On the bearing surface of a plurality of the grooves, the grooves other than the largest size are located on the bottom surface of the grooves of the previous larger size; the number of the adjustment members is multiple, and each adjustment member The piece corresponds to a bearing surface of one of the grooves.
本申请还提供一种半导体处理设备,该半导体处理设备包括处理装置及上述任一实施方式所述的承载装置,所述处理装置与所述承载装置对应,并用于对承载在所述承载装置上的工件进行处理。The present application further provides a semiconductor processing equipment, the semiconductor processing equipment includes a processing device and the carrier device according to any one of the above embodiments, the processing device corresponds to the carrier device, and is used for the processing device to be carried on the carrier device. workpiece to be processed.
本申请还提供一种承载装置的使用方法,该使用方法包括:放置工件于承载件上,使所述工件的第一区位于所述承载件的承载面,所述工件的第二区与所述承载件的凹槽对应并与所述凹槽的底壁间隔;移动调整件至所述工件的远离所述承载件的第一侧,并使所述工件的第二侧与所述承载件之间形成密封的腔体,所述工件的第一侧与所述工件的第二侧相背;利用所述调整件的第二吸附单元吸附所述工件以使所述工件的平整度在预设范围内;利用所述承载面上的第一吸附单元吸附所述工件的第一区;及关闭所述第二吸附单元并移开所述调整件,所述第一吸附单元保持吸附所述工件的第一区于所述承载面。The present application also provides a method for using a carrying device, the using method includes: placing a workpiece on a carrier, so that a first area of the workpiece is located on a bearing surface of the carrier, and a second area of the workpiece is connected to the carrier. The groove of the carrier corresponds to and is spaced from the bottom wall of the groove; moves the adjustment member to the first side of the workpiece away from the carrier, and makes the second side of the workpiece and the carrier A sealed cavity is formed therebetween, and the first side of the workpiece is opposite to the second side of the workpiece; the workpiece is adsorbed by the second adsorption unit of the adjustment piece to make the flatness of the workpiece within the predetermined use the first adsorption unit on the bearing surface to adsorb the first area of the workpiece; and close the second adsorption unit and remove the adjustment member, the first adsorption unit keeps adsorbing the The first area of the workpiece is on the bearing surface.
本申请还提供一种承载装置的使用方法,该使用方法包括:放置工件于调整件上;利用所述调整件的第二吸附单元吸附所述工件并使所述工件的平整度在预设范围内;移动调整件至所述工件的远离所述承载件的第一侧,并使所述工件的第一区位于承载件的承载面,及所述工件的第二区与所述承载件的凹槽对应并与所述凹槽的底壁间隔,所述工件与所述承载件之间形成密封的腔体,所述工件的第一侧与所述工件的第二侧相背;利用所述承载面上的第一吸附单元吸附所述工件的第一区;及关闭所述第二吸附单元并移开所述调整件,所述第一吸附单元保持吸附所述工件的第一区于所述承载面。The present application also provides a method for using a carrying device, which includes: placing a workpiece on an adjustment member; using a second adsorption unit of the adjustment member to adsorb the workpiece and keep the flatness of the workpiece within a preset range inside; move the adjustment member to the first side of the workpiece away from the carrier, and make the first area of the workpiece located on the bearing surface of the carrier, and the second area of the workpiece and the carrier The groove corresponds to and is spaced from the bottom wall of the groove, a sealed cavity is formed between the workpiece and the carrier, and the first side of the workpiece is opposite to the second side of the workpiece; The first adsorption unit on the bearing surface adsorbs the first area of the workpiece; and the second adsorption unit is closed and the adjustment piece is removed, and the first adsorption unit keeps the first area for adsorption of the workpiece in the bearing surface.
本申请的承载装置、半导体处理设备及承载装置的使用方法中,承载件的第一吸附单元吸附工件的第一区,并通过调整件的第二吸附单元对工件进行预平整处理,保证后续处理对工件平整度的需求,进而保证半导体工件的处理精度。In the carrier device, the semiconductor processing equipment, and the method for using the carrier device of the present application, the first adsorption unit of the carrier absorbs the first area of the workpiece, and the second adsorption unit of the adjustment member pre-levels the workpiece to ensure subsequent processing. The demand for the flatness of the workpiece, thereby ensuring the processing accuracy of the semiconductor workpiece.
本申请的实施方式的附加方面和优点将在下面的描述中部分给出,部分将从下面的描述中变得明显,或通过本申请的实施方式的实践了解到。Additional aspects and advantages of embodiments of the present application will be set forth, in part, in the following description, and in part will be apparent from the following description, or learned by practice of embodiments of the present application.
附图说明Description of drawings
本申请的上述和/或附加的方面和优点从结合下面附图对实施方式的描述中将变得明显和容易理解,其中:The above and/or additional aspects and advantages of the present application will become apparent and readily understood from the following description of embodiments taken in conjunction with the accompanying drawings, wherein:
图1是本申请某些实施方式的承载装置与工件的结构示意图;1 is a schematic structural diagram of a carrying device and a workpiece according to some embodiments of the present application;
图2是本申请某些实施方式的承载装置的承载件的立体示意图;2 is a schematic perspective view of a carrier of a carrier device according to some embodiments of the present application;
图3是本申请某些实施方式的承载装置的承载件的剖面示意图;3 is a schematic cross-sectional view of a carrier of a carrier device according to some embodiments of the present application;
图4是本申请某些实施方式的承载装置的调整件的立体示意图;4 is a schematic perspective view of an adjustment member of a carrying device according to some embodiments of the present application;
图5是本申请某些实施方式的承载装置的调整件的立体示意图;5 is a schematic perspective view of an adjustment member of a carrying device according to some embodiments of the present application;
图6是图1中的承载装置沿VI-VI线的剖面示意图;Fig. 6 is the cross-sectional schematic diagram of the carrying device in Fig. 1 along VI-VI line;
图7至图9是本申请某些实施方式的半导体处理设备的结构示意图;7 to 9 are schematic structural diagrams of semiconductor processing equipment according to some embodiments of the present application;
图10至图12是本申请某些实施方式的承载装置的使用方法的流程图。10 to 12 are flowcharts of methods of using the carrying device according to some embodiments of the present application.
具体实施方式Detailed ways
以下结合附图对本申请的实施方式作进一步说明。附图中相同或类似的标号自始至终表示相同或类似的元件或具有相同或类似功能的元件。The embodiments of the present application will be further described below with reference to the accompanying drawings. The same or similar reference numbers refer to the same or similar elements or elements having the same or similar functions throughout the drawings.
另外,下面结合附图描述的本申请的实施方式是示例性的,仅用于解释本申请的实施方式,而不能理解为对本申请的限制。In addition, the embodiments of the present application described below in conjunction with the accompanying drawings are exemplary, only used to explain the embodiments of the present application, and should not be construed as limitations on the present application.
在本申请中,除非另有明确的规定和限定,第一特征在第二特征“上”或“下”可以是第一和第二特征直接接触,或第一和第二特征通过中间媒介间接接触。而且,第一特征在第二特征“之上”、“上方”和“上面”可是第一特征在第二特征正上方或斜上方,或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”可以是第一特征在第二特征正下方或斜下方,或仅仅表示第一特征水平高度小于第二特征。In this application, unless otherwise expressly stated and defined, a first feature "on" or "under" a second feature may be in direct contact with the first and second features, or the first and second features indirectly through an intermediary touch. Also, the first feature being "above", "over" and "above" the second feature may mean that the first feature is directly above or obliquely above the second feature, or simply means that the first feature is level higher than the second feature. The first feature being "below", "below" and "below" the second feature may mean that the first feature is directly below or obliquely below the second feature, or simply means that the first feature has a lower level than the second feature.
请参阅图1及图4,本申请的承载装置100包括承载件10及调整件20。承载件10设有凹槽11,凹槽11的侧壁12包括承载面121,承载面121设有第一吸附单元13,第一吸附单元13用于将工件30的第一区31吸附于承载面121。凹槽11与工件30的第二区32对应,凹槽11的底壁110与工件30的第二区32间隔;调整件20包括第二吸附单元21,第二吸附单元21用于吸附工件30以使工件30的平整度在预设范围内,调整件20能够移动以使工件30夹设在承载件10与调整件20之间。Please refer to FIG. 1 and FIG. 4 , the
其中,承载装置100中,承载件10可用于承载各类工件30以供半导体处理设备1000(图8所示)进行处理,其中,工件30包括但不限于为晶圆、芯片、显示屏面板、手机前盖、手机后盖、VR眼镜、AR眼镜、智能手表盖板、玻璃、透镜、木材、铁板、任何装置的壳体(例如手机壳)等元件。目前,工件30由于工艺及使用需求不同,工件30的厚度在几十到几百微米之间不等,当工件30的厚度较薄时,其由于制造工艺,很容易产生比较大的翘曲,且因为其自身厚度比较薄,放置在承载装置100上时,由于重力作用也会产生较大形变。例如,在对有图案晶圆背面进行处理时,由于有图案晶圆正面已有工艺图形不可以接触承载装置100,无法大面积吸附晶圆正面以对有图案晶圆背面进行处理,这样的承载装置100无法保证工件30的平整度,从而影响工件30的处理精度。Wherein, in the
具体地,第二吸附单元21连接抽气装置,抽气装置通过调节第二吸附单元21内的压强,使得第二吸附单元21能够均匀吸附工件30的背面,保证工件30的平整度在预设范围内。例如,当对工件30进行检测时,要求工件30的平整度的预设范围是[0.01mm,0.5mm],调节第二吸附单元21的压强为负压以吸附工件30,当工件30的平整度在[0.01mm,0.5mm]范围内时,停止调节第二吸附单元21的压强;当对工件30进行切割时,要求工件30的平整度的预设范围是[0.01mm,0.7mm],则调节第二吸附单元21的压强为负压以吸附工件30,当工件30的平整度在[0.01mm,0.7mm]范围内时,停止调节第二吸附单元21的压强。具体地,平整度的预设范围可根据处理工序或工件30本身的特性来设置,从而控制第二吸附单元21的压强大小以使工件30的平整度在预设范围内。Specifically, the
本申请的承载装置100中,承载件10的第一吸附单元13吸附工件30的第一区31,并通过调整件20的第二吸附单元21对工件30进行预平整处理,保证后续处理对工件30平整度的需求,进而保证半导体工件30的处理精度。In the
下面结合附图作进一步说明。Further description will be given below in conjunction with the accompanying drawings.
请参阅图2,在某些实施方式中,凹槽11呈圆形,凹槽11对应工件30的第二区32,承载面121对应工件30的第一区31。即,承载面121环绕凹槽11,第一区31环绕第二区32。例如,在对有工艺图形的工件30进行背面(无图案的一面)检测时,工件30的正面面对凹槽11,如此可避免工件30的正面与承载装置100接触,防止划损工件30的工艺图形。在另外一些实施方式中,凹槽11还可呈三角形、四边形、五边形、六边形等其他规则或不规则形状,相应地,承载件10的外轮廓的形状和/或调整件20的外轮廓的形状可对应凹槽11的形状,也可呈三角形、四边形、五边形、六边形等其他规则或不规则形状,以适用于不同形状的工件30;或者,承载件10的外轮廓和/或调整件20的外轮廓仍为图1所示的圆形,承载面121的形状则是圆形除去凹槽11的形状(三角形、四边形、五边形、六边形等其他规则或不规则形状)之后剩余部分形状。或承载件10的外轮廓的形状和/或调整件20的外轮廓的形状不对应凹槽11的形状,只需保证承载件10具有承载工件30的第一区31的承载面121和保证调整件20能够完全吸附工件30的整面即可。Referring to FIG. 2 , in some embodiments, the
请继续参阅图2,在某些实施方式中,凹槽11的数量可以为一个,此时,承载件10用于承载一种尺寸的工件30。对应地,调整件20的数量也为一个,尺寸与承载件10能够承载的工件30的尺寸对应。Please continue to refer to FIG. 2 , in some embodiments, the number of
请结合图3,在某些实施方式中,凹槽11的数量可为多个,自承载件10的中心至周缘,多个凹槽11的尺寸逐渐增大,多个不同尺寸的工件30能够承载在多个凹槽11对应的承载面121上,最大尺寸之外的凹槽11位于前一较大尺寸的凹槽11的底面111。例如,凹槽11的数量为三个,在从承载面121a朝承载面121c延伸的垂直方向上,分别为凹槽11a、凹槽11b、凹槽11c,凹槽11c的尺寸(例如,直径)大于凹槽11b和凹槽11c的尺寸(例如,直径),凹槽11b的尺寸(例如,直径)大于凹槽11a的尺寸(例如,直径),凹槽11b位于凹槽11c的底面111所在的位置,即,凹槽11b位于凹槽11a的承载面121a上。多个承载面121可适用不同尺寸的工件30,当更换不同尺寸的工件30时,不需要更换承载装置100,节省材料的同时满足生产化需求。Referring to FIG. 3 , in some embodiments, the number of the
对应地,调整件20的数量为多个,每个调整件20对应一个凹槽11的承载面121,在使用承载装置100时,可以保证对应尺寸的工件30的平整度在预设范围内。Correspondingly, the number of
例如,凹槽11a对应的承载面121a适用于尺寸为8寸的工件30,对应的调整件20对工件30进行预平整处理;凹槽11b对应的承载面121b适用于尺寸为12寸的工件30,对应的调整件20对工件30进行预平整处理;凹槽11c对应的承载面121c适用于尺寸为16寸的工件30,对应的调整件20对工件30进行预平整处理。尺寸的大小不限定于8寸、12寸、16寸,还可以为17寸、15寸、14寸、13寸、11寸、7寸、6寸、5寸、4寸、3寸、2寸、1寸等,承载件10的尺寸可根据实际的工件30的尺寸进行设置。For example, the
请参阅图1,在一个实施例中,第一吸附单元13可包括多个第一气孔131,多个第一气孔131相互间隔并均匀地分布在承载面121上。具体地,可通过与第一气孔131连通的抽气泵调节第一气孔131的气压,从而实现将工件30的第一区31吸附在承载面121上。相互间隔并均匀分布的第一气孔131能够均匀地吸附工件30的第一区31,使得第一区31各部分受力均匀,避免第一区31发生翘曲,同时,保证通过第一气孔131的吸附能将工件30稳定地吸附在承载件10上。Referring to FIG. 1 , in one embodiment, the
在另一个实施例中,第一吸附单元13可包括设置在承载面121的环形的第一气槽(图未示出),即,承载面121上的环形的第一气槽向下凹陷形成。环形第一气槽可包括一个或多个(大于或等于两个),多个环形的第一气槽呈同心圆设置在承载面121上,多个环形第一气槽能够增加第一区31的吸附面积,以便于将工件30的第一区31稳定地吸附在承载面121上。同样地,可通过与环形的第一气槽连通的抽气泵调节第一气槽的气压,从而实现将工件30的第一区31吸附在承载面121上。In another embodiment, the
请参阅图4,在一个实施例中,第二吸附单元21可包括设置在调整件20朝向承载件10的表面上的多个环形的第二气槽211,每个环形的第二气槽211同心设置,调整件20可设有气路,气路连通多个第二气槽211,通过抽气泵等抽气装置对第二气槽211进行抽气,将第二气槽211的压强调整为负压,以吸附工件30的背面,实现对工件30的预平整处理。Referring to FIG. 4 , in one embodiment, the
请参阅图5,在另一个实施例中,第二吸附单元21还可包括设置在调整件20朝向承载件10的表面上的多个第二气孔212,多个第二气孔212相互间隔并均匀地设置在调整件20上,同样地,调整件20可设有气路,气路连通多个第二气孔212,通过抽气泵等抽气装置对第二气孔212进行抽气,将第二气孔212内的压强调整为负压,以吸附工件30的背面,实现对工件30的预平整处理。Referring to FIG. 5 , in another embodiment, the
在再一个实施例中,调整件20为多孔陶瓷结构,第二吸附单元21可包括多孔陶瓷结构的多个第二气孔212,由于多孔陶瓷属于绝缘材质,多孔陶瓷结构的调整件20吸附工件30时,能消散静电特性,避免调整件20在进行预平整处理时损坏或污染工件30。In yet another embodiment, the
具体地,调整件20通过调节第二吸附单元21内的压强,以保证工件30的平整度在预设范围内。例如,假设预设的平整度的范围为[0.01mm,0.5mm],通过抽气装置将第二吸附单元21的压强调节为负压,当工件30的平整度在[0.01mm,0.5mm]范围内时,此时,停止调节第二吸附单元21的压强;当工件30的平整度不在[0.01mm,0.5mm]范围内时,继续调节第二吸附单元21的压强,直至将工件30的平整度调整至[0.01mm,0.5mm]范围内,并使得工件30的平整度保持在预设范围内。工件平整度在[0.01mm,0.5mm]范围内是设备可以接受的平整度,如果平整度大于0.5mm,那么检测设备在检测工件的不同区域时,需要重新调焦才能得到理想的结果,这样将严重影响工作效率,不利于生产需要,而平整度小于0.01mm,则需要精确的电气控制组件,反而会增加检测设备成本。当工件30的平整度保持在预设范围内后,接着,可向上移动调整件20,承载件10的第一吸附单元13产生的吸附力可将工件30稳定地吸附在承载件10上,并能保证工件30的平整度保持在预设范围内,此时,半导体处理设备1000(图8所示)的处理装置200(图8所示)可对工件30进行检测或工艺等处理。Specifically, the
在某些实施方式中,承载件10与调整件20同轴设置,可减少对调整件20的移动,调整件20移动时只需对准承载件10进行升降即可,如此,第二吸附单元21能够产生均匀的吸附力,以均匀地吸附工件30进而能高效地将工件30的平整度调整至预设范围内。In some embodiments, the
请参阅图6,在工件30夹设在承载件10与调整件20之间时,工件30与承载件10之间形成密封的腔体40,当工件30正面朝向凹槽11的底壁110放置时,该腔体40能够避让工件30的正面的工艺图形,保证工件30正面的工艺图形的完整性。此时,开启调整件20的第二吸附单元21并将工件30的平整度调整至预设范围内,以供半导体处理设备1000(图8所示)的处理装置200(图8所示)对工件30进行处理工作,提高工件30的处理精度。Referring to FIG. 6 , when the
进一步地,请参阅图7,承载装置100还可包括第一驱动件50,第一驱动件50用于驱动调整件20移动和/或转动。具体地,第一驱动件50可为电机、气缸、液压等驱动装置,可带动调整件20沿图7所示的X轴、Y轴、Z轴中的至少一个轴移动或者转动。第一驱动件50驱动调整件20移动和/或转动,能够使得调整件20与承载件10同轴,如此,第二吸附单元21能够产生均匀的吸附力,以均匀地吸附工件30进而能高效地将工件30的平整度调整至预设范围内。同时,调整件20与承载件10同轴,还能使第一吸附单元13能够准确且均匀地吸附工件30的第一区31,在移开调整件20后,第一吸附单元13产生的吸附力仍可将工件30稳定地吸附在承载件10上,并能保证工件30的平整度保持在预设范围内。Further, referring to FIG. 7 , the carrying
具体地,当对工件30进行处理时,承载件10与调整件20分隔开,即,调整件20相对于承载件10位于高位的位置,先将工件30的第一侧33(背面)朝向调整件20放置于承载件10上,由于凹槽11的存在,使得工件30仅第一区31与承载面121接触,工件30的第二区32对应凹槽11,工件30的第二侧34(正面)有工艺图形的区域保持非接触。此时,通过第一驱动件50将调整件20沿工件30的轴向向承载件10所在的方向移动,由于工件30第一侧33(背面)朝向调整件20,同时,工件30的第二侧34(正面)的第一区31承载在承载件10的承载面121上,使得工件30夹设在承载件10与调整件20之间时,工件30与承载件10之间形成密封的腔体40。此时,开启调整件20的第二吸附单元21的真空吸附开关,将第二吸附单元21的压强调节为负压,将工件30完全吸附平整于调整件20上且将工件30的平整度调整至预设范围内,此时工件30由于自身工艺及重力存在的翘曲可被校正平整。然后,开启第一吸附单元13的真空吸附开关,将第一吸附单元13的压强调节为负压,使得工件30的第二侧34(正面)的第一区31同时吸附于承载面121上。此时,由于工件30已经由调整件20预校正为平整状态,且在平整状态下工件30的第二侧34(正面)第一区31均匀吸附于承载面121上,所以当关闭第二吸附单元21的真空吸附开关时,工件30仍能保持平整状态。最后,第一驱动件50带动调整件20朝远离承载件10的方向移动,即可对工件30进行后续处理工作。Specifically, when the
请继续参阅图7,承载装置100还可包括第二驱动件60,第二驱动件60用于驱动承载件10移动和/或转动。具体地,第二驱动件60可为电机、气缸、液压等驱动装置,可带动承载件10沿图7所示的X轴、Y轴、Z轴中的至少一个轴移动或者转动。第二驱动件60驱动承载件10移动和/或转动,能够使得承载件10与调整件20同轴,如此,第二吸附单元21能够产生均匀的吸附力,以均匀地吸附工件30进而能高效地将工件30的平整度调整至预设范围内。同时,承载件10与调整件20同轴,还能使第一吸附单元13能够准确且均匀地吸附工件30的第一区31,在移开承载件10后,第一吸附单元13产生的吸附力仍可将工件30稳定地吸附在承载件10上,并能保证工件30的平整度保持在预设范围内,以供处理装置200(图8所示)进行处理并保证工件30的处理精度。具体地,当对工件30进行处理时,承载件10与调整件20分隔开,即,调整件20相对于承载件10位于高位的位置,先将工件30的第一侧33(背面)朝向调整件20放置于承载件10上,由于凹槽11的存在,使得工件30仅第一区31与承载面121接触,工件30的第二区32对应凹槽11,工件30的第二侧34(正面)有工艺图形的区域保持非接触。此时,通过第二驱动件60将承载件10沿工件30的轴向向调整件20所在的方向移动,由于工件30第一侧33(背面)朝向调整件20,同时,工件30的第二侧34(正面)的第一区31承载在承载件10的承载面121上,使得工件30夹设在承载件10与调整件20之间时,工件30与承载件10之间形成密封的腔体40。此时,开启调整件20的第二吸附单元21的真空吸附开关,将第二吸附单元21的压强调节为负压,将工件30完全吸附平整于调整件20上且将工件30的平整度调整至预设范围内,此时工件30由于自身工艺及重力存在的翘曲可被校正平整。然后,开启第一吸附单元13的真空吸附开关,将第一吸附单元13的压强调节为负压,使得工件30的第二侧34(正面)的第一区31同时吸附于承载面121上。此时,由于工件30已经由调整件20预校正为平整状态,且在平整状态下工件30的第二侧34(正面)第一区31均匀吸附于承载面121上,所以当关闭第二吸附单元21的真空吸附开关时,工件30仍能保持平整状态。最后,第二驱动件60带动承载件10朝远离调整件20的方向移动,此时,第一吸附单元13仍对工件30进行吸附,使得第二驱动件60能够带动承载件10和工件30一起移动,即可对工件30进行后续处理工作。Please continue to refer to FIG. 7 , the carrying
请还参阅图7,承载装置100还可同时包括第一驱动件50和第二驱动件60。其中,第一驱动件50用于驱动调整件20移动和/或转动,第二驱动件60用于驱动承载件10移动和/或转动。具体地,第一驱动件50和第二驱动件60可同为电机、气缸、液压等驱动装置,可分别带动调整件20及承载件10沿图7所示的X轴、Y轴、Z轴中的至少一个轴移动或者转动。第一驱动件50和第二驱动件60可同时开启,即,第一驱动件50驱动调整件20移动和/或转动的同时,第二驱动件60驱动承载件10移动和/或转动,并控制调整件20和承载件10同轴,如此,第二吸附单元21能够产生均匀的吸附力,以均匀地吸附工件30进而能高效地将工件30的平整度调整至预设范围内。同时,调整件20与承载件10同轴,还能使第一吸附单元13能够准确且均匀地吸附工件30的第一区31,在移开调整件20后,第一吸附单元13产生的吸附力仍可将工件30稳定地吸附在承载件10上,并能保证工件30的平整度保持在预设范围内。Please also refer to FIG. 7 , the carrying
同样地,当对工件30进行处理时,承载件10与调整件20分隔开,即,调整件20相对于承载件10位于高位的位置,可先将工件30的第一侧33(背面)朝向调整件20放置于承载件10上,由于凹槽11的存在,使得工件30仅第一区31与承载面121接触,工件30的第二区32对应凹槽11,工件30的第二侧34(正面)有工艺图形的区域保持非接触。此时,第一驱动件50驱动调整件20移动和/或转动的同时,第二驱动件60驱动承载件10移动和/或转动,节省同轴调节时间,提高同轴调节的效率,从而缩短整个处理过程的时间,提高处理效率。由于工件30第一侧33(背面)朝向调整件20,同时,工件30的第二侧34(正面)的第一区31承载在承载件10的承载面121上,使得工件30夹设在承载件10与调整件20之间时,工件30与承载件10之间形成密封的腔体40。此时,开启调整件20的第二吸附单元21的真空吸附开关,将第二吸附单元21的压强调节为负压,将工件30完全吸附平整于调整件20上且将工件30的平整度调整至预设范围内,此时工件30由于自身工艺及重力存在的翘曲可被校正平整。然后,开启第一吸附单元13的真空吸附开关,将第一吸附单元13的压强调节为负压,使得工件30的第二侧34(正面)的第一区31同时吸附于承载面121上。此时,由于工件30已经由调整件20预校正为平整状态,且在平整状态下工件30的第二侧34(正面)第一区31均匀吸附于承载面121上,所以当关闭第二吸附单元21的真空吸附开关时,工件30仍能保持平整状态。最后,第一驱动件50带动调整件20朝远离承载件10的方向移动和/或第二驱动件60带动承载件10朝远离调整件20的方向移动,以方便处理装置200(图8所示)对工件30进行处理;同时,第二驱动件60可带动承载件10移动,以使得半导体处理设备1000(图8所示)对工件30进行处理(例如光学检测)时,位于对焦位置,提高工件30的处理精度;或第二驱动件60可带动承载件10转动,以实现对工件30的转动处理(例如检测、镀膜、蚀刻、切割)。Likewise, when the
请参阅图8,本申请还提供一种半导体处理设备1000,该半导体处理设备1000包括处理装置200及上述任一实施方式的承载装置100,处理装置200与承载装置100对应,并用于对承载在承载装置100上的工件30进行处理。Referring to FIG. 8 , the present application further provides a
在一个实施例中,处理装置200可为检测仪,检测仪可用于检测承载在承载装置100上的工件30的缺陷。在一个实施例中,处理装置200可为蚀刻装置,蚀刻装置可用于对承载在承载装置100上的工件30进行蚀刻。在另一个实施例中,处理装置200还可为镀膜装置,镀膜装置可用于对承载在承载装置100上的工件30进行蒸镀、溅镀等。处理装置200还可以是其他类型,均属于本申请的保护范围,在此不一一列举。In one embodiment, the
请参阅图8及图10,本申请还提供一种承载装置100的使用方法,该使用方法包括:Please refer to FIG. 8 and FIG. 10 , the present application further provides a method of using the carrying
01:放置工件30于承载件10上,使工件30的第一区31位于承载件10的承载面121,工件30的第二区32与承载件10的凹槽11对应并与凹槽11的底壁110间隔;01: Place the
02:移动调整件20至工件30的远离承载件10的第一侧33,并使工件30的第二侧34与承载件10之间形成密封的腔体40,工件30的第一侧33与工件30的第二侧34相背;02: Move the
03:利用调整件20的第二吸附单元21吸附工件30以使工件30的平整度在预设范围内;03: Using the
04:利用承载面121上的第一吸附单元13吸附工件30的第一区31;及04: Using the
05:关闭第二吸附单元21并移开调整件20,第一吸附单元13保持吸附工件30的第一区31于承载面121。05 : Turn off the
具体地,当对工件30进行处理时,承载件10与调整件20分隔开,即,调整件20相对于承载件10位于高位的位置,先将工件30的第一侧33(背面)朝向调整件20放置于承载件10上,由于凹槽11的存在,使得工件30仅第一区31与承载面121接触,工件30的第二区32对应凹槽11并与凹槽11的底壁110间隔,工件30的第二侧34(正面)有工艺图形的区域保持非接触。此时,通过第一驱动件50将调整件20移动至工件30的第一侧33,由于工件30的第一侧33(背面)朝向调整件20,同时,工件30的第二侧34(正面)的第一区31承载在承载件10的承载面121上,使得工件30夹设在承载件10与调整件20之间时,工件30与承载件10之间形成密封的腔体40。此时,开启调整件20的第二吸附单元21的真空吸附开关,将第二吸附单元21的压强调节为负压,将工件30完全吸附平整于调整件20上且将工件30的平整度调整至预设范围内,此时工件30由于自身工艺及重力存在的翘曲可被校正平整。然后,开启第一吸附单元13的真空吸附开关,将第一吸附单元13的压强调节为负压,使得工件30的第二侧34(正面)的第一区31同时吸附于承载面121上。此时,由于工件30已经由调整件20预校正为平整状态,且在平整状态下,第一吸附单元13保持均匀吸附工件30的第二侧34(正面)第一区31于承载面121上,所以当关闭第二吸附单元21的真空吸附开关时,工件30仍能保持平整状态。最后,可由第一驱动件50带动调整件20朝远离承载件10的方向移动,处理装置200即可对工件30进行后续处理工作。Specifically, when the
请参阅图8及图11,在一个实施例中,承载装置100的使用方法中的02和04可调整先后处理顺序,即,该使用方法可包括:Referring to FIG. 8 and FIG. 11 , in one embodiment, the processing order of 02 and 04 in the using method of the carrying
01:放置工件30于承载件10上,使工件30的第一区31位于承载件10的承载面121,工件30的第二区32与承载件10的凹槽11对应并与凹槽11的底壁110间隔;01: Place the
04:利用承载面121上的第一吸附单元13吸附工件30的第一区31;04: Using the
02:移动调整件20至工件30的远离承载件10的第一侧33,并使工件30的第二侧34与承载件10之间形成密封的腔体40,工件30的第一侧33与工件30的第二侧34相背;02: Move the
03:利用调整件20的第二吸附单元21吸附工件30以使工件30的平整度在预设范围内;及03: Using the
05:关闭第二吸附单元21并移开调整件20,第一吸附单元13保持吸附工件30的第一区31于承载面121。05 : Turn off the
具体地,当对工件30进行处理时,承载件10与调整件20分隔开,即,调整件20相对于承载件10位于高位的位置,先将工件30的第一侧33(背面)朝向调整件20放置于承载件10上,由于凹槽11的存在,使得工件30仅第一区31与承载面121接触,工件30的第二区32对应凹槽11并与凹槽11的底壁110间隔,工件30的第二侧34(正面)有工艺图形的区域保持非接触。此时,开启第一吸附单元13的真空吸附开关,将第一吸附单元13的压强调节为负压,使得工件30的第二侧34(正面)的第一区31同时吸附于承载面121上。然后,可通过第一驱动件50将调整件20移动至工件30的第一侧33,由于工件30的第一侧33(背面)朝向调整件20,同时,工件30的第二侧34(正面)的第一区31承载在承载件10的承载面121上,使得工件30夹设在承载件10与调整件20之间时,工件30与承载件10之间形成密封的腔体40。此时,开启调整件20的第二吸附单元21的真空吸附开关,将第二吸附单元21的压强调节为负压,将工件30完全吸附平整于调整件20上且将工件30的平整度调整至预设范围内,此时工件30由于自身工艺及重力存在的翘曲可被校正平整。此时,由于工件30已经由调整件20预校正为平整状态,且在平整状态下,第一吸附单元13仍保持均匀吸附工件30的第二侧34(正面)第一区31于承载面121上,所以当关闭第二吸附单元21的真空吸附开关时,工件30仍能保持平整状态。最后,可由第一驱动件50带动调整件20朝远离承载件10的方向移动,处理装置200即可对工件30进行后续处理工作。Specifically, when the
01至05方法中,先通过第一吸附单元13将工件30承载在承载件10上,再移动调整件20至承载件10所在的位置,对工件30进行预平整处理,平整度达到预设范围的工件30无需调节位置便能将工件30的第一区31对准承载面121,减少对工件30的位置调节,可防止调节位置过程中划损工件30第二侧34(正面)的工艺图形。In the methods from 01 to 05, the
请参阅图9及图12,在另一个实施例中,该使用方法还可包括:Referring to FIG. 9 and FIG. 12, in another embodiment, the using method may further include:
06:放置工件30于调整件20上;06: Place the
07:利用调整件20的第二吸附单元21以使工件30的平整度在预设范围内;07: Use the
08:移动调整件20至工件30的远离承载件10的第一侧33,并使工件30的第一区31位于承载件10的承载面121,及工件30的第二区32与承载件10的凹槽11对应并与凹槽11的底壁110间隔,工件30与承载件10之间形成密封的腔体40,工件30的第一侧33与工件的第二侧34相背;08: Move the
09:利用承载面121上的第一吸附单元13吸附工件30的第一区31;及09: Using the
010:关闭第二吸附单元21并移开调整件20,第一吸附单元13保持吸附工件30的第一区31于承载面121。010 : Turn off the
具体地,当对工件30进行处理时,承载件10与调整件20分隔开,即,调整件20相对于承载件10位于低位的位置,先将工件30的第一侧33(背面)朝向调整件20放置于调整件20上,此时,开启调整件20的第二吸附单元21的真空吸附开关,将第二吸附单元21的压强调节为负压,将工件30完全吸附平整于调整件20上且将工件30的平整度调整至预设范围内,此时工件30由于自身工艺及重力存在的翘曲可被校正平整。然后,可通过第一驱动件50(图8所示)将调整件20移动至承载件10所在的位置,由于工件30的第一侧33(背面)朝向调整件20,同时,工件30的第二侧34(正面)的第一区31位于承载件10的承载面121上,工件30的第二区32对应凹槽11,使得工件30夹设在承载件10与调整件20之间时,工件30与承载件10之间形成密封的腔体40。此时,开启第一吸附单元13的真空吸附开关,将第一吸附单元13的压强调节为负压,使得工件30的第二侧34(正面)的第一区31同时吸附于承载面121上。此时,由于工件30已经由调整件20预校正为平整状态,且在平整状态下,第一吸附单元13仍保持均匀吸附工件30的第二侧34(正面)第一区31于承载面121上,所以当关闭第二吸附单元21的真空吸附开关时,工件30仍能保持平整状态。最后,可由第一驱动件50(图8所示)带动调整件20朝远离承载件10的方向移动,处理装置200即可对工件30进行后续处理工作。Specifically, when the
06至010方法中,先对工件30进行预平整处理,然后通过控制调整件20与承载件10同轴,并将预平整处理后的工件30平稳地放置在承载件10上,避免翘曲的工件30放置在承载件10上时工件30会掉落到凹槽11中的情况发生,第一吸附单元13可以更好地吸附工件30的第一区31。In the methods from 06 to 010, the
请参阅图8,本申请的承载装置100、半导体处理设备1000及承载装置100的使用方法中,承载件10的第一吸附单元13吸附工件30的第一区31,调整件20可移动至承载件10的位置以将工件30夹设在承载件10及调整件20之间,并通过调整件20的第二吸附单元21(图4所示)对工件30进行预平整处理,保证后续处理对工件30平整度的需求,进而保证半导体工件30的平整度在预设范围内。Referring to FIG. 8 , in the
在本说明书的描述中,参考术语“某些实施方式”、“一个实施方式”、“一些实施方式”、“示意性实施方式”、“示例”、“具体示例”、或“一些示例”的描述意指结合所述实施方式或示例描述的具体特征、结构、材料或者特点包含于本申请的至少一个实施方式或示例中。在本说明书中,对上述术语的示意性表述不一定指的是相同的实施方式或示例。而且,描述的具体特征、结构、材料或者特点可以在任何的一个或多个实施方式或示例中以合适的方式结合。In the description of this specification, reference is made to the terms "some embodiments," "one embodiment," "some embodiments," "exemplary embodiments," "examples," "specific examples," or "some examples." Described means that a particular feature, structure, material, or characteristic described in connection with the described embodiment or example is included in at least one embodiment or example of the present application. In this specification, schematic representations of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
此外,术语“第一”、“第二”仅用于描述目的,而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此,限定有“第一”、“第二”的特征可以明示或者隐含地包括至少一个所述特征。在本申请的描述中,“多个”的含义是至少两个,例如两个,三个,除非另有明确具体的限定。In addition, the terms "first" and "second" are only used for descriptive purposes, and should not be construed as indicating or implying relative importance or implying the number of indicated technical features. Thus, features delimited with "first", "second" may expressly or implicitly include at least one of said features. In the description of the present application, "plurality" means at least two, such as two, three, unless expressly and specifically defined otherwise.
尽管上面已经示出和描述了本申请的实施例,可以理解的是,上述实施例是示例性的,不能理解为对本申请的限制,本领域的普通技术人员在本申请的范围内可以对上述实施例进行变化、修改、替换和变型,本申请的范围由权利要求及其等同物限定。Although the embodiments of the present application have been shown and described above, it should be understood that the above embodiments are exemplary and should not be construed as limitations to the present application. Variations, modifications, substitutions, and alterations are made to the embodiments, and the scope of the present application is defined by the claims and their equivalents.
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