CN114813558A - High-sensitivity 3D displacement sensor for assisting terahertz imaging - Google Patents
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Abstract
Provided is a high-sensitivity 3D displacement sensor for assisting terahertz imaging. The sensor is composed of a fixed layer (comprising a flexible substrate layer and a metal open resonant ring thereon) and a displacement indicating layer (comprising a flexible substrate layer and a metal indicating line thereon). By means of the unique double-layer structure, the variable quantity of the position of the metal indicating wire corresponding to the terahertz transmission wave trough change of the displacement sensor is measured, so that high-sensitivity measurement on displacement can be realized, the position of a target body in the terahertz imaging process is accurately calibrated, and effective assistance is provided for terahertz defect imaging detection, accurate characterization of the edge profile of the imaging target body and micro-motion measurement of the imaging target body. Compared with mature commercial displacement sensors and laser displacement sensors, the terahertz displacement sensor has the characteristics of compact structure, simple preparation process, high sensitivity, flexibility and the like, and can provide certain reference for realizing high precision, miniaturization and a distributed sensing system in the future.
Description
Technical Field
The invention belongs to the field of artificial electromagnetic materials, and particularly relates to a method for assisting a terahertz imaging system to realize high-precision imaging by using a high-sensitivity 3D displacement sensor.
Background
The Terahertz (THz) wave occupies a very special position in an electromagnetic spectrum, the frequency band of the THz wave is in a special area in transition from electronics to photonics, and the special frequency position not only enables the THz wave to have low-frequency microwave characteristics and photon characteristics, but also shows the unique properties of low photon energy, strong penetrability to nonmetal and nonpolar substances, capability of simultaneously obtaining amplitude and phase information of a pulse electric field, good anti-interference capability and the like, so that the THz wave has wide application prospects in the fields of safety detection, nondestructive detection, spectral analysis, imaging, medical treatment and the like, and particularly urgent application requirements of a high-performance THz imaging technology. However, in the aspect of the hardware of the THz imaging system, a large-area, uniform and controllable-intensity THz radiation source, a high-sensitivity terahertz detection device and the limitation of high thermal radiation background noise in a THz frequency band are lacked, so that coherent stripes and laser speckles are generated in the obtained THz image; in the aspect of THz image processing software, conventionally used Calibration-Based NUC (CBNUC) algorithms Based on reference sources, Scene-Based adaptive class correction algorithms (SBNUC) algorithms, and image preprocessing and fusion techniques inevitably cause problems of edge loss, smear, ghost and the like of THz images.
Disclosure of Invention
The invention aims to solve the problems of coherent stripes, laser speckles, edge loss, smear, ghost and the like of terahertz images in the existing terahertz imaging technology, and provides a high-sensitivity 3D displacement sensor for realizing effective positioning of the edge of an imaging target body.
The key to solving these problems is the precise location of the imaged target edge, which can be solved by assisting a highly sensitive displacement sensor with the THz imaging system. The artificial microstructure can change the spatial distribution of electromagnetic parameters in the transmission process of electromagnetic waves, and effectively controls the transmission and local area of the electromagnetic waves, thereby greatly improving the sensitivity of sensing. Although the existing sensing measurement technology based on the flexible substrate THz metamaterial is not mature enough, most THz wave detection and analysis are based on a THz-time domain spectroscopy (THz-TDS) system, and the sensitivity is not high enough, but the technical solution is more and more clear. The basic method is that the high-density electric field or magnetic field concentration effect is realized by regulating and controlling the structure of the THz metamaterial, so that the THz metamaterial can amplify the micro disturbance caused by the physical quantity to be detected, and the aim of detecting the physical quantity to be detected with high sensitivity is realized.
The technical scheme of the invention is as follows:
a high-sensitivity 3D displacement sensor for assisting terahertz imaging comprises a fixed layer and a displacement indicating layer; the fixed layer is composed of a flexible substrate layer and a C-shaped metal opening resonance ring evaporated on the surface of the flexible substrate layer, the displacement indicating layer is composed of a flexible substrate layer and a metal indicating line evaporated on the surface of the flexible substrate layer, and the metal opening resonance ring and the metal indicating line are arranged on planes which are relatively parallel; with the help of this kind of unique bilayer structure, through measuring the change volume of the metal indicator line that displacement sensor terahertz transmission trough change corresponds, alright realize the high sensitivity measurement to the displacement, and then carry out accurate location to terahertz formation of image in-process target body now.
The side length range of the flexible substrate layer of the fixed layer is 45-55 mu m, and the thickness range is 10-30 mu m; the metal open resonator has a ring edge length of 33-43 μm, a thickness of 0.15-0.3 μm, a ring width of 2-5 μm, and an opening slit width of 2 μm.
The side length range of the flexible substrate layer of the displacement indication layer is 45-55 mu m, and the thickness range is 10-30 mu m; the initial position of the metal indicating line on the displacement indicating layer is parallel to the side where the opening of the opening resonance ring of the fixed layer is located, the length range of the metal indicating line is 23-33 mu m, the thickness range is 0.15-0.3 mu m, and the line width is 2 mu m.
The flexible substrate layer material is selected from the following flexible polymer film materials with lower dielectric constant: polyimide (PI), Mylar (Mylar), Parylene-C (Parylene-C), polyethylene naphthalate (polyethylene naphthalate)ne terephthalate, PET), Polyethylene Naphthalate (PEN), magnesium fluoride (MgF) 2 ) Benzocyclobutene (BCB), Polystyrene (PS), Cyclic Olefin Copolymer (COC), or Polymethyl Methacrylate (PMMA).
The materials of the metal open resonant ring and the metal indicating line are selected from the following metals with good conductive performance: au, Ag, Nb, Cu or Al.
Based on the physical mechanism of electromagnetic coupling, the invention utilizes the corresponding relation between the relative displacement difference value between the fixed layer and the displacement indication layer of the sensor and the wave valley frequency shift value in the terahertz transmission spectrum of the sensor to carry out high-precision positioning and characterization on the edge of a target body, thereby realizing terahertz high-sensitivity imaging. The preparation and characterization method comprises the following steps:
(1) and preparing a mask according to the structural parameters of the high-sensitivity 3D displacement sensor which is designed by simulation.
(2) Preparing a fixing layer of the high-sensitivity 3D displacement sensor:
spin coating electron beam exposure glue (AZ5214) on a flexible substrate by using a spin coater, and drying for 10min on a hot plate at 100 ℃;
writing a gds format open resonant ring sample pattern by using an electron beam exposure machine (EBL), inserting a mask plate, and performing ultraviolet exposure on the dried substrate for 3 s;
developing the substrate after photoetching for 70s by using a developing solution, and then cleaning the residual photoresist for 60s by using deionized water for fixing;
evaporating a metal resonance ring with the thickness of 0.2 mu m on the surface of the substrate by using an electron beam evaporation coating machine;
fifthly, after the acetone or the photoresist removing solution is used for soaking and peeling the sample, ultrasonic cleaning is carried out for 2s, and then the fixed layer of the displacement sensor can be obtained.
(3) Preparing a displacement indication layer of the high-sensitivity 3D displacement sensor:
spin coating electron beam exposure glue (AZ5214) on a flexible substrate by a spin coater, and drying with a hot plate at 100 ℃ for 10 min;
writing an indication line sample graph in gds format by using an Electron Beam Lithography (EBL), inserting the indication line sample graph into a mask plate, and performing ultraviolet exposure on the dried substrate for 3 s;
developing the substrate after photoetching for 70s by using a developing solution, and then cleaning photoresist residues for 60s by using deionized water for fixing;
evaporating a metal indicating line with the thickness of 0.2 mu m on the surface of the substrate by using an electron beam evaporation coating machine;
fifthly, ultrasonic cleaning is carried out for 2s after the acetone or the photoresist removing solution is used for soaking and peeling the sample, and then the indicating layer of the displacement sensor can be obtained.
(4) The 3D displacement sensor and the terahertz imaging target body are combined and then placed in a terahertz imaging system for terahertz imaging detection.
(5) The positioning function of the 3D displacement sensor is assisted, the terahertz imaging result is optimized, and quantitative evaluation is carried out by using sensitivity (S), a quality factor (Q value) and a quality factor (FoM).
Preferably, after the flexible substrate is coated with the exposure glue in the steps (2) and (3), drying is carried out for 10min by using a hot plate at 100 ℃.
Preferably, the time for ultraviolet exposure of the flexible substrate in steps (2) and (3) is 3 s.
Preferably, the developing time of the flexible substrate in steps (2) and (3) is 70s, and the fixing time is 60 s.
Preferably, the ultrasonic cleaning time for the sample in steps (2) and (3) is 2 s.
Preferably, the quantitative performance evaluation parameters for the 3D displacement sensor in step (5) are sensitivity (S), quality factor (Q-value) and quality factor (FoM).
The invention has the advantages and beneficial effects that:
the high-sensitivity 3D displacement sensor for assisting terahertz imaging has a simple structure and good compatibility, and can perform high-precision positioning and characterization on an imaging target body only by reading the indicator line movement amount reflected by the valley frequency shift value of the terahertz transmission spectrum of the sensor, so that terahertz high-sensitivity imaging is realizedThe sensitivity of the shift sensor can reach 145 GHz/mum, the quality factor Q can reach 230, and the quality factor FoM can reach 9.67 mum -1 . Meanwhile, the sensor can still keep higher Q value and FoM value under different directions and different displacement values, and has good stability. In addition, the displacement sensor also has the characteristics of good direction selection and simple operation, so that the displacement sensor has more advantages in practical application. Compared with mature commercial displacement sensors and laser displacement sensors, the sensor has the characteristics of compact structure, simple preparation process, high sensitivity, flexibility and the like, can provide certain reference for high-precision, miniaturization, distributed sensing systems, micro-displacement detection and the like in the future, and has wide application scenes.
Drawings
FIG. 1 is a perspective view of a 3D terahertz displacement sensor of the present invention; in the figure, 1 is a fixed layer, and 2 is a displacement indicating layer;
FIG. 2 is a schematic perspective top view of a 3D terahertz displacement sensor unit structure;
FIG. 3 is a schematic side view of a 3D terahertz displacement sensor unit structure;
FIG. 4 is a schematic plan view of a pinned layer in the cell structure of FIG. 1; in the figure, 1-1 is a metal open resonant ring;
FIG. 5 is a schematic plan view of a displacement indicating layer in the unit structure of FIG. 1; in the figure, 2-1 is a metal indicating line;
FIG. 6 is a graph showing the relationship between the shift variation and the shift value of the valley in the spectrum of the terahertz shift sensor in example 1;
FIG. 7 is a graph of an x-direction displacement accurate measurement spectrum of the terahertz displacement sensor in example 2;
FIG. 8 is a graph of a y-direction displacement accurate measurement spectrum of the terahertz displacement sensor in example 2;
fig. 9 is a graph of a z-direction displacement accurate measurement spectrum of the terahertz displacement sensor in embodiment 2.
Detailed Description
In order to make the technical scheme, the achieved purpose and the efficacy of the present invention easy to understand, the structure and the preparation method of the high-sensitivity 3D displacement sensor for assisting terahertz imaging will be described in detail below with reference to the accompanying drawings and the specific embodiments.
Example 1
Fig. 1 shows a 3D terahertz displacement sensor structure of the present invention, and fig. 2 and 3 are a top view and a side view of the 3D terahertz displacement sensor, respectively, and the displacement sensor structure includes a fixed layer 1 (fig. 4) and a displacement indication layer 2 (fig. 5).
As shown in fig. 4, the flexible substrate layer of the fixed layer is square, the side length is 50 μm, and the thickness is 10 μm; the side length of the metal open-ended resonant ring 1-1 is 38 μm, the thickness is 0.2 μm, the ring width is 2 μm, and the width of the open slot is 2 μm.
As shown in fig. 5, the flexible substrate layer of the displacement indicating layer has a side length of 50 μm and a thickness of 10 μm; the metal indicating line 2-1 has a side length of 28 μm, a thickness of 0.2 μm and a line width of 2 μm. The initial position of the metal indicating line on the displacement indicating layer is parallel to the edge of the opening resonant ring of the fixed layer.
The specific preparation and working process of the displacement sensor structure are as follows:
step one, preparation of terahertz displacement sensor mask
1. Simulation: based on the regulation and control of the terahertz metamaterial structure, the high-density electric field or magnetic field aggregation effect is realized, the amplification effect of the terahertz metamaterial structure on the micro disturbance caused by the physical quantity to be detected is realized, the principle of high-sensitivity detection on the physical quantity to be detected is realized, CST or COMSOL electromagnetic simulation software is utilized to simulate and calculate the electromagnetic spectrum (figure 6) of the displacement sensor structure, the relation between the test performance of the structure and parameters such as materials, shapes, dimensions and the like is analyzed, and then various parameter values of the terahertz displacement sensor structure which is most suitable for assisting the terahertz imaging system are optimally found.
2. And drawing a model diagram of the terahertz displacement sensor by using L-edge software, and then preparing a mask of the sensor.
Step two, preparation of fixed layer in terahertz displacement sensor
1. Spin coating electron beam exposure glue (AZ5214) on Mylar flexible substrate with spin coater, and oven drying at 100 deg.C for 10 min;
2. writing an open resonant ring graph in gds format by using an electron beam exposure machine (EBL), inserting a mask plate, and carrying out ultraviolet exposure on the dried substrate for 3 s;
3. developing the substrate after photoetching for 70s by using a developing solution, and then cleaning the photoresist residual glue for 60s by using deionized water for fixing;
4. evaporating a gold (Au) resonance ring with the thickness of 0.2 mu m on the surface of the substrate by using an electron beam evaporation film plating machine;
5. and (3) carrying out ultrasonic cleaning for 2s after the acetone or photoresist removing solution is used for soaking the sample to be stripped, so as to obtain the fixed layer of the displacement sensor.
Step three, preparation of displacement indication layer in terahertz displacement sensor
1. Spin coating electron beam exposure glue (AZ5214) on Mylar flexible substrate with spin coater, and oven drying at 100 deg.C for 10 min;
2. writing an indicator line graph in gds format by using an Electron Beam Lithography (EBL), inserting the indicator line graph into a mask plate, and performing ultraviolet exposure on the dried substrate for 3 s;
3. developing the substrate after photoetching for 70s by using a developing solution, and then cleaning the photoresist residual glue for 60s by using deionized water for fixing;
4. using an electron beam evaporation coating machine to carry out vapor deposition on a gold (Au) indicator wire with the thickness of 0.2 mu m on the surface of the substrate;
5. and (3) stripping the soaked sample by using acetone or a photoresist removing solution, and then carrying out ultrasonic cleaning for 2s to obtain the indicating layer of the displacement sensor.
Step four, the application of the terahertz displacement sensor to assisting the terahertz imaging system in imaging the static target body
1. Respectively attaching a fixed layer and a plurality of displacement indication layers of the terahertz displacement sensor to different positions with large shape change fluctuation of the edge of an imaging target body to form a combined body according to the actual shape of the imaging target body;
2. and placing the combined terahertz displacement sensor and the imaging target body in a terahertz imaging system for terahertz imaging detection.
3. The edge of the target body is accurately positioned by analyzing the change value of the terahertz transmission spectrum valley of each displacement indication layer, and the spatial dimension can be accurate to 1 mu m.
Example 2
This example differs from example 1 only in that:
step four, the application of the terahertz displacement sensor to assisting the terahertz imaging system in imaging the moving target body
1. The method comprises the following steps that a fixed layer of a terahertz displacement sensor is arranged at a terahertz beam waist in a terahertz imaging system, and a displacement indicating layer of the sensor is attached to the back of an imaging target body;
2. based on the accurate positioning characteristics of the terahertz displacement sensor in displacement in three spatial directions, as shown in fig. 7, 8 and 9, which are graphs of the terahertz transmission spectrum of the terahertz displacement sensor along with displacement in the x direction, the y direction and the z direction, the change value of the trough in the high-frequency region can linearly reflect the displacement change of the moving target body, so that the displacement calibration with the accuracy of 1 μm in the terahertz imaging detection of the moving target body is realized;
3. the performance of the terahertz displacement sensor was quantitatively evaluated using the sensitivity (S), quality factor (Q) and quality factor (FoM), see table 1.
TABLE 1 Performance parameters of terahertz Displacement Sensors
| Displacement (μm) | S(GHzμm -1 ) | Q | FoM(μm -1 ) |
| x | 25 | 194.67 | 1.67 |
| y | 145 | 144.25 | 7.7 |
| z | 125 | 148.5 | 6.25 |
The embodiments of the present invention are described in detail above, and the principle and the embodiments of the present invention are explained by the specific embodiments, and the description of the embodiments is only used to help understanding the process and the core idea of the present invention; meanwhile, for a person skilled in the art, according to the idea of the present invention, there may be variations in the specific embodiments and the application scope, and in summary, the content of the present specification should not be construed as a limitation to the present invention.
Claims (6)
1. The utility model provides a supplementary terahertz imaging's high sensitive 3D displacement sensor which characterized in that: the displacement sensor structure comprises a fixed layer and a displacement indicating layer; the fixed layer is composed of a flexible substrate layer and a C-shaped metal opening resonance ring evaporated on the surface of the flexible substrate layer, and the displacement indicating layer is composed of a flexible substrate layer and a metal indicating line evaporated on the surface of the flexible substrate layer.
2. The displacement sensor of claim 1, wherein: the side length range of the flexible substrate layer of the fixed layer is 45-55 mu m, and the thickness range is 10-30 mu m; the metal open resonator has a ring edge length of 33-43 μm, a thickness of 0.15-0.3 μm, a ring width of 2-5 μm, and an opening slit width of 2 μm.
3. The displacement sensor of claim 2, wherein: the opening of the metal opening resonance ring is positioned in the middle of one side of the metal opening resonance ring.
4. The displacement sensor of claim 1, wherein: the side length range of the flexible substrate layer of the displacement indication layer is 45-55 mu m, and the thickness range is 10-30 mu m; the initial position of the metal indicating line on the displacement indicating layer is parallel to the side where the opening of the opening resonance ring of the fixed layer is located, the length range of the metal indicating line is 23-33 mu m, the thickness range is 0.15-0.3 mu m, and the line width is 2 mu m.
5. The displacement sensor of claim 1, wherein: the flexible substrate layer material is selected from the following flexible polymer film materials with lower dielectric constant: polyimide (PI), Mylar (Mylar), Parylene-C (Parylene-C), Polyethylene Naphthalate (PET), Polyethylene Naphthalate (PEN), magnesium fluoride (MgF) 2 ) Benzocyclobutene (BCB), Polystyrene (PS), Cyclic Olefin Copolymer (COC), or Polymethyl Methacrylate (PMMA).
6. The displacement sensor of claim 1, wherein: the materials of the metal open resonant ring and the metal indicating line are selected from the following metals with good conductive performance: au, Ag, Nb, Cu or Al.
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| CN116818704A (en) * | 2023-03-09 | 2023-09-29 | 苏州荣视软件技术有限公司 | High-precision full-automatic detection method, equipment and medium for semiconductor flaw AI |
| CN116818704B (en) * | 2023-03-09 | 2024-02-02 | 苏州荣视软件技术有限公司 | High-precision full-automatic detection method, equipment and medium for semiconductor flaw AI |
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