CN114808129A - Heating device for be used for indium phosphide polycrystal growth - Google Patents
Heating device for be used for indium phosphide polycrystal growth Download PDFInfo
- Publication number
- CN114808129A CN114808129A CN202110082619.1A CN202110082619A CN114808129A CN 114808129 A CN114808129 A CN 114808129A CN 202110082619 A CN202110082619 A CN 202110082619A CN 114808129 A CN114808129 A CN 114808129A
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- Prior art keywords
- heating
- indium phosphide
- growth
- indium
- phosphide polycrystal
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- 238000010438 heat treatment Methods 0.000 title claims abstract description 169
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 title claims abstract description 53
- 239000013078 crystal Substances 0.000 claims abstract description 31
- 229910052738 indium Inorganic materials 0.000 claims abstract description 27
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims abstract description 27
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 22
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 22
- 239000011574 phosphorus Substances 0.000 claims abstract description 22
- 239000000463 material Substances 0.000 claims abstract description 9
- 229910000831 Steel Inorganic materials 0.000 claims description 10
- 239000010959 steel Substances 0.000 claims description 10
- 229910000838 Al alloy Inorganic materials 0.000 claims description 6
- -1 iron-chromium-aluminum Chemical compound 0.000 claims description 6
- GALOTNBSUVEISR-UHFFFAOYSA-N molybdenum;silicon Chemical compound [Mo]#[Si] GALOTNBSUVEISR-UHFFFAOYSA-N 0.000 claims description 6
- 229910000623 nickel–chromium alloy Inorganic materials 0.000 claims description 6
- 238000005452 bending Methods 0.000 claims description 4
- 238000005485 electric heating Methods 0.000 claims description 4
- 238000000034 method Methods 0.000 abstract description 11
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 230000015572 biosynthetic process Effects 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 238000003786 synthesis reaction Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000000788 chromium alloy Substances 0.000 description 1
- 229910000423 chromium oxide Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000001308 synthesis method Methods 0.000 description 1
Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B28/00—Production of homogeneous polycrystalline material with defined structure
- C30B28/12—Production of homogeneous polycrystalline material with defined structure directly from the gas state
- C30B28/14—Production of homogeneous polycrystalline material with defined structure directly from the gas state by chemical reaction of reactive gases
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention is suitable for the technical field of semiconductor material production, and provides a heating device for indium phosphide polycrystal growth. The heating device includes: a plurality of heating elements arranged on a crystal growth device for indium phosphide polycrystal growth; a plurality of groups of electrodes with the same number as the heating elements; each group of electrodes comprises a positive electrode and a negative electrode which are respectively connected with two ends of the heating body; and after the electrodes are electrified, a heating zone for heating element phosphorus or element indium and indium phosphide polycrystal growth is formed on the crystal growth device corresponding to the heating element. Compared with the prior art, each group of electrodes is adopted to respectively supply power to each heating body, so that the heating area and the growth area formed by each heating body can be independently controlled, the temperature range meeting the process temperature control curve requirements of the polycrystalline growth of the element phosphorus, the element indium and the indium phosphide is obtained, and the mutual influence among the heating areas formed by the heating bodies is reduced to the greatest extent.
Description
Technical Field
The invention belongs to the technical field of semiconductor material production, and particularly relates to a heating device for indium phosphide polycrystal growth.
Background
The indium phosphide single crystal is a periodic III and V group compound semiconductor, is used as an excellent high-speed electronic and photoelectric device material, and has wide application prospect. To obtain a high-quality, large-size indium phosphide single crystal, a high-purity indium phosphide polycrystal must first be synthesized. Common indium phosphide polycrystal synthesis methods include a horizontal Bridgman method and an implantation method. No matter which method is adopted, the basic process idea is that the indium phosphide polycrystal is synthesized by phosphorus steam and indium melt, and high-purity phosphorus and high-purity indium are required to be heated to obtain the phosphorus steam and the indium melt.
Because the heating temperatures needed by high-purity phosphorus and high-purity indium are different, the inner parts of the existing indium phosphide polycrystal synthesis furnace are provided with different heating zones which are respectively used for heating the high-purity phosphorus and the high-purity indium.
The applicant of the present invention finds that, in implementing the above technical solution, the above technical solution has at least the following disadvantages:
although the heating conditions of the high-purity phosphorus heating zone and the high-purity indium heating zone can be controlled respectively in the existing indium phosphide polycrystal synthesis furnace, the high-purity phosphorus heating zone and the high-purity indium heating zone are actually composed of a plurality of sub-temperature zones, and the sub-temperature zones cannot be independently controlled.
Disclosure of Invention
An object of an embodiment of the present invention is to provide a heating apparatus for indium phosphide polycrystal growth, which is intended to solve the problems mentioned in the background art.
The embodiment of the invention is realized by a heating device for growing indium phosphide polycrystal, which comprises:
a plurality of heating elements arranged on a crystal growth device for indium phosphide polycrystal growth;
a plurality of groups of electrodes with the same number as the heating elements; each group of electrodes comprises a positive electrode and a negative electrode which are respectively and electrically connected with two ends of the heating body; and when the electrodes are electrified, a heating area for heating element phosphorus or element indium and a growth area for growing indium phosphide polycrystal are formed on the crystal growth device corresponding to the heating element.
Preferably, the heating element is formed in a spiral shape.
Preferably, a plurality of groups of the electrodes are connected in parallel.
Preferably, when the heating zone is used for heating elemental phosphorus, the temperature range of the heating zone is 400-500 ℃; when the heating area is used for heating the element indium, the temperature range of the heating area is 1000-1100 ℃; the growth region of the indium phosphide polycrystal is overlapped with the heating region where the element indium is positioned.
Preferably, the heating body is made of an electric heating material.
Preferably, the heating body is made of nickel-chromium alloy, iron-chromium-aluminum alloy or silicon-molybdenum rod.
Preferably, the heating body is formed by bending round steel with phi 4-10 mm or a flat steel strip with the equivalent diameter of phi 4-10 mm.
Preferably, the electrode is powered by a dc power supply.
Preferably, the heating device further comprises:
the temperature sensor is used for acquiring temperature information of the heating area and the growth area;
a control unit; and the control unit controls the voltage values at the two ends of the heating body according to the temperature information acquired by the temperature sensor.
Preferably, the heating body and the electrode are provided with 6-12 groups.
The embodiment of the invention provides a heating device for indium phosphide polycrystal growth, which comprises: a plurality of heating elements arranged on a crystal growth device for indium phosphide polycrystal growth; a plurality of groups of electrodes with the same number as the heating elements; each group of electrodes comprises a positive electrode and a negative electrode which are respectively and electrically connected with two ends of the heating body; and when the electrodes are electrified, a heating area for heating the element phosphorus or the element indium is formed on the crystal growing device corresponding to the heating body.
Compared with the prior art, each group of electrodes is adopted to respectively supply power to each heating body, so that the heating area and the growth area formed by each heating body can be independently controlled, the temperature range meeting the process temperature control curve requirements of the polycrystalline growth of the element phosphorus, the element indium and the indium phosphide is obtained, and the mutual influence between the heating area and the growth area formed by each heating body is reduced to the greatest extent.
Drawings
FIG. 1 is a sectional view of a heating apparatus for polycrystalline growth of indium phosphide according to an embodiment of the present invention;
fig. 2 is a cross-sectional view of a heating apparatus having 9 heating zones according to an embodiment of the present invention.
In the drawings: 1. a crystal growing apparatus; 2. a heating element; 3. and an electrode.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
Specific implementations of the present invention are described in detail below with reference to specific embodiments.
Example 1
As shown in fig. 1, a heating apparatus for indium phosphide polycrystal growth is provided for one embodiment of the present invention, and the heating apparatus includes:
a plurality of heating elements 2 provided on the crystal growth apparatus 1 for indium phosphide polycrystal growth;
a plurality of groups of electrodes 3 with the same number as the heating elements; each group of electrodes 3 comprises a positive electrode and a negative electrode which are respectively and electrically connected with two ends of the heating body 2; when the electrode 3 is energized, a heating area for heating elemental phosphorus or elemental indium and a growth area for polycrystalline growth of indium phosphide are formed in the crystal growth apparatus 1 at a position corresponding to the heating element 2.
The working principle of the embodiment of the invention is as follows:
when indium phosphide polycrystal production is carried out, phosphorus and indium meeting certain purity requirements are sequentially placed on the crystal growth device 1 at intervals at a position corresponding to the heating element 2, then the electrode 3 is used for electrifying the heating element 2, and a heating area for heating element phosphorus or element indium and a growth area for indium phosphide polycrystal growth are formed on the crystal growth device 1 at a position corresponding to the heating element 2. According to different elements placed in the regions, the heating effect of each heating body 2 can be independently controlled by controlling the voltage on the electrode 3 corresponding to the heating region and the growth region.
Compared with the prior art, each group of electrodes 3 is adopted to respectively supply power to each heating body 2, so that the heating area and the growth area formed by each heating body can be independently controlled, the temperature range meeting the requirements of the process temperature control curve of the polycrystalline growth of the element phosphorus, the element indium and the indium phosphide is obtained, and the mutual influence between the heating area and the growth area formed by each heating body is reduced to the greatest extent.
In a preferred embodiment of the present invention, the heating element has a spiral shape.
Specifically, compared with a heating element with a common shape, the heating element 2 in the spiral shape of the embodiment of the present invention has a larger heating area and can provide a better heating effect on the premise of being made of a material with the same volume.
As a preferred embodiment of the present invention, a plurality of sets of the electrodes 3 are connected in parallel.
Specifically, the multiple groups of electrodes 3 can be controlled independently, and can also be controlled independently by parallel connection.
As a preferred embodiment of the present invention, when the heating zone is used for heating elemental phosphorus, the temperature of the heating zone is in the range of 400 to 500 ℃; when the heating area is used for heating the element indium, the temperature range of the heating area is 1000-1100 ℃; the growth region of the indium phosphide polycrystal is overlapped with the heating region where the element indium is positioned.
In a preferred embodiment of the present invention, the heating body is made of an electric heating material.
Specifically, the electric heating material is used for manufacturing a resistance heating element, and has good oxidation resistance at high temperature. The oxidation resistance of the commonly used electrothermal alloys comes from the formation of a dense oxide film on the surface, such as nickel-chromium alloys, mainly chromium oxide, iron-chromium-aluminum alloys, aluminum oxide, and silicon-molybdenum bars, which prevent the deep oxidation of the metal matrix.
As a preferred embodiment of the present invention, the heating body is made of a nickel-chromium alloy, an iron-chromium-aluminum alloy, or a silicon-molybdenum rod.
Specifically, the heating body can be made of any one of nickel-chromium alloy, iron-chromium-aluminum alloy or silicon-molybdenum rod.
As a preferred embodiment of the invention, the heating body is formed by bending round steel with phi 4-10 mm or a flat steel strip with the equivalent diameter of phi 4-10 mm.
Specifically, the heating element 2 is generally formed by processing and bending round steel of phi 4 to 10mm or a flat steel strip of phi 4 to 10mm in equivalent diameter into a spiral shape. The round steel or flat steel strip is made of the above-mentioned electrothermal material (nickel-chromium alloy, iron-chromium-aluminum alloy or silicon-molybdenum rod).
As a preferred embodiment of the invention, the electrodes 3 are powered by a dc power supply.
Specifically, the heating device provided by the invention adopts direct current power supply to ensure the working stability and continuity of the heating device.
As a preferred embodiment of the present invention, the heating device further comprises:
the temperature sensor is used for acquiring temperature information of the heating area and the growth area;
a control unit; and the control unit controls the voltage values at the two ends of the heating body according to the temperature information acquired by the temperature sensor.
Specifically, in order to realize accurate control of each heating area on the basis of independent control, the present embodiment is additionally provided with a temperature sensor and a control unit. The temperature information of the heating zones can be acquired through the temperature sensors, the information acquired by the temperature sensors is transmitted to the control unit, and the control unit adjusts the voltage at the two ends of the heating body 2 in real time according to the temperature information acquired by the temperature sensors by combining a temperature control curve in the production process of the indium phosphide polycrystal, so that the temperature range of each heating zone is accurately controlled, and the temperature field required by each stage of the growth of the indium phosphide polycrystal is acquired.
In this embodiment, the control unit may be selected from a PLC control unit, a single chip, or an ARM chip.
In a preferred embodiment of the present invention, the heating element 2 and the electrode 3 are provided in 6 to 12 groups.
Specifically, according to the length of the growing device for growing the indium phosphide polycrystalline crystal, generally 6 to 12 heating zones can be provided, that is, 6 to 12 groups of the heating body 2 and the electrode 3 can be provided.
Example 2
An embodiment of the present invention also provides a crystal growth apparatus for polycrystalline growth of indium phosphide, comprising a crystal growth apparatus main body and the heating apparatus of any one of embodiment 1 provided in the crystal growth apparatus main body.
In addition, a pressure sensor is arranged in the crystal growing device main body, so that the pressure value in the crystal growing device can be acquired in real time, and overlarge pressure fluctuation in the crystal growing device is avoided.
Compared with the existing indium phosphide polycrystal production synthesis furnace, the present embodiment adopts each group of electrodes 3 to respectively supply power to each heating body 2, so that the heating zones formed by each heating body (the growth zone of the indium phosphide polycrystal is overlapped with the heating zone where the element indium is located) can be independently controlled, the temperature range meeting the requirements of the process temperature control curve of the growth of the element phosphorus, the element indium and the indium phosphide polycrystal is obtained, and the mutual influence among the heating zones formed by each heating body is reduced as much as possible. In a preferred embodiment of the present invention, the heating element has a spiral shape.
Moreover, the present embodiment can also realize accurate control of each heating area on the basis of independent control by providing the temperature sensor and the control unit.
Example 3
An embodiment of the present invention provides a growth process of an indium phosphide polycrystal, the growth process being based on the crystal growth apparatus described in embodiment 2, the crystal growth apparatus comprising a crystal growth apparatus body, a pressure sensor, and the heating apparatus described in embodiment 1 disposed in the crystal growth apparatus body, as shown in fig. 2, the heating apparatus comprising:
9 heating elements 2;
9 groups of electrodes 3, wherein each group of electrodes 3 comprises a positive electrode and a negative electrode which are respectively and electrically connected with two ends of the heating body 2; when the electrode 3 is electrified, a heating zone for heating element phosphorus or element indium is formed on the crystal growing device 1 corresponding to the heating element 2 (the growth zone of indium phosphide polycrystal is overlapped with the heating zone of the element indium); 9 heating bodies form 9 heating zones in total, namely a zone I, a zone II, a zone III, a zone IV, a zone V, a zone VI, a zone VII, a zone VIII and a zone IX in sequence;
the temperature sensor is used for acquiring temperature information of the heating area and the growth area;
a control unit; and the control unit controls the voltage values at the two ends of the heating body according to the temperature information acquired by the temperature sensor.
The growth process of the indium phosphide polycrystal is as follows:
and in the initial stage of crystal growth, controlling the temperature of the VI-IX area to rise to 1000 ℃ at the heating rate of 50-150 ℃/h, preserving the temperature for 5-6 h, and temporarily not heating other areas. And then increasing the temperature of the areas I to III to 400 ℃ at a temperature increase rate of 5-50 ℃/h, and adjusting the temperature increase rate of the areas I to III in real time by the control unit according to signals fed back by the temperature sensor and the pressure sensor in the temperature increase period so as to avoid overlarge pressure fluctuation in the crystal growth device.
And in the final stage of crystal growth, after the temperature of the VI-IX areas is reduced to 1000 ℃ at the cooling rate of 5-30 ℃/h, the control unit automatically cuts off the heating power supply, and the crystal growth device is naturally cooled to room temperature.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents and improvements made within the spirit and principle of the present invention are intended to be included within the scope of the present invention.
Claims (10)
1. A heating apparatus for polycrystalline growth of indium phosphide, characterized by comprising:
a plurality of heating elements arranged on a crystal growth device for indium phosphide polycrystal growth;
a plurality of groups of electrodes with the same number as the heating elements; each group of electrodes comprises a positive electrode and a negative electrode which are respectively connected with two ends of the heating body; and when the electrodes are electrified, a heating area for heating element phosphorus or element indium and a growth area for growing indium phosphide polycrystal are formed on the crystal growth device corresponding to the heating element.
2. The heating device for indium phosphide polycrystal growth according to claim 1, wherein the heating body is in a spiral shape.
3. The heating device for indium phosphide polycrystal growth according to claim 1, wherein a plurality of groups of the electrodes are connected in parallel.
4. The heating device for indium phosphide polycrystal growth according to claim 1, wherein when the heating zone is used for heating elemental phosphorus, the temperature of the heating zone is in the range of 400 to 500 ℃; when the heating area is used for heating the element indium, the temperature range of the heating area is 1000-1100 ℃; the growth region of the indium phosphide polycrystal is overlapped with the heating region where the element indium is positioned.
5. The heating device for indium phosphide polycrystal growth according to claim 1, wherein the heating body is made of an electric heating material.
6. The heating device for indium phosphide polycrystal growth according to claim 5, wherein the heating body is made of a nickel-chromium alloy, an iron-chromium-aluminum alloy or a silicon-molybdenum rod.
7. The heating device for indium phosphide polycrystal growth according to claim 6, wherein the heating body is formed by bending round steel with phi 4-10 mm or a flat steel strip with the equivalent diameter of phi 4-10 mm.
8. The heating device for indium phosphide polycrystal growth according to claim 1, wherein the electrode is supplied with electric power from a direct-current power supply.
9. The heating apparatus for indium phosphide polycrystal growth according to claim 1, characterized in that the heating apparatus further comprises:
the temperature sensor is used for acquiring temperature information of the heating area and the growth area;
a control unit; and the control unit controls the voltage values at the two ends of the heating body according to the temperature information acquired by the temperature sensor.
10. The heating device for indium phosphide polycrystal growth according to claim 1, wherein 6 to 12 groups of heating bodies and electrodes are provided.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110082619.1A CN114808129A (en) | 2021-01-21 | 2021-01-21 | Heating device for be used for indium phosphide polycrystal growth |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110082619.1A CN114808129A (en) | 2021-01-21 | 2021-01-21 | Heating device for be used for indium phosphide polycrystal growth |
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| Publication Number | Publication Date |
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| CN114808129A true CN114808129A (en) | 2022-07-29 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202110082619.1A Pending CN114808129A (en) | 2021-01-21 | 2021-01-21 | Heating device for be used for indium phosphide polycrystal growth |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63112487A (en) * | 1986-10-31 | 1988-05-17 | Furukawa Electric Co Ltd:The | Crystal growth method for compound semiconductor and apparatus |
| CN103002602A (en) * | 2011-09-19 | 2013-03-27 | 中国科学院金属研究所 | Integrated heating core for built-in porous heater and manufacturing method thereof |
| CN104955184A (en) * | 2015-06-24 | 2015-09-30 | 合肥长城制冷科技有限公司 | Novel post and wire composite rod-shaped heating tube |
| CN106757360A (en) * | 2016-12-27 | 2017-05-31 | 珠海鼎泰芯源晶体有限公司 | The horizontal synthesizer of indium phosphide polycrystal and control method for pressure balance |
-
2021
- 2021-01-21 CN CN202110082619.1A patent/CN114808129A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63112487A (en) * | 1986-10-31 | 1988-05-17 | Furukawa Electric Co Ltd:The | Crystal growth method for compound semiconductor and apparatus |
| CN103002602A (en) * | 2011-09-19 | 2013-03-27 | 中国科学院金属研究所 | Integrated heating core for built-in porous heater and manufacturing method thereof |
| CN104955184A (en) * | 2015-06-24 | 2015-09-30 | 合肥长城制冷科技有限公司 | Novel post and wire composite rod-shaped heating tube |
| CN106757360A (en) * | 2016-12-27 | 2017-05-31 | 珠海鼎泰芯源晶体有限公司 | The horizontal synthesizer of indium phosphide polycrystal and control method for pressure balance |
Non-Patent Citations (2)
| Title |
|---|
| 卿民: "热处理工艺学(中级本)", vol. 1984, 30 June 1984, 科学普及出版社, pages: 441 * |
| 邹广严: "能源大辞典", vol. 1997, 31 January 1997, 四川科学技术出版社, pages: 1021 * |
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