CN114807901A - 节能高效的pecvd反应炉管装置 - Google Patents
节能高效的pecvd反应炉管装置 Download PDFInfo
- Publication number
- CN114807901A CN114807901A CN202210442912.9A CN202210442912A CN114807901A CN 114807901 A CN114807901 A CN 114807901A CN 202210442912 A CN202210442912 A CN 202210442912A CN 114807901 A CN114807901 A CN 114807901A
- Authority
- CN
- China
- Prior art keywords
- push rod
- furnace tube
- energy
- saving
- pecvd
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000006243 chemical reaction Methods 0.000 title claims abstract description 30
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 title claims abstract description 25
- 238000010438 heat treatment Methods 0.000 claims abstract description 24
- 230000005674 electromagnetic induction Effects 0.000 claims abstract description 18
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 17
- 239000010439 graphite Substances 0.000 claims abstract description 17
- 229910002804 graphite Inorganic materials 0.000 claims abstract description 17
- 239000000835 fiber Substances 0.000 claims abstract description 7
- 239000010425 asbestos Substances 0.000 claims description 2
- 239000010453 quartz Substances 0.000 claims description 2
- 229910052895 riebeckite Inorganic materials 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 2
- 238000005229 chemical vapour deposition Methods 0.000 abstract description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 238000010248 power generation Methods 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000004321 preservation Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000002457 bidirectional effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
本发明属于管式PECVD设备。为解决上述的PECVD恒温时间过长、转化效率低的问题，本发明提供一种节能高效的PECVD反应炉管装置，包括外侧炉体、加热炉体、纤维保温圈、电磁感应加热装置、石墨舟、推杆、支撑杆及法兰盘，所述法兰盘设置在外侧炉体的上下两端，法兰盘与外侧炉体之间设置纤维保温圈，所述支撑杆设置在加热炉体内，石墨舟设置在支撑杆上，所述电磁感应加热装置的电磁感应线圈环绕石墨舟设置；所述推杆包括上推杆和下推杆，下推杆上设置放置槽，上推杆伸出炉管的两端，下推杆位于炉管内。本发明通过电磁感应加热，升温速度快，通过电磁感应的磁场分布增强化学气相沉积，提高转化效率。
Description
技术领域
本发明属于管式PECVD设备，具体涉及一种节能高效的PECVD反应炉管装置。
背景技术
光伏发电是半导体的光电效应，它可以利用半导体的光电效应将光能直接转变为电能，光伏发电相比于传统的发电系统具有能源质量较高、获取时间较短、在复杂地区也比较容易搭建、危险性低、能源绿色清洁等一系列优点。减少晶体硅的反射，能够提高光电转化效率。PECVD(Plasma Enhanced Chemical Vapor Deposition，等离子体增强化学气相沉积)采用的等离子体增强化学气相沉积技术可以有效的减少晶体硅对于太阳光的反射，从而提高电池的转化效率。
管式PECVD设备是在低温下可以进行高质量淀积减反射膜的装置，主要包括有反应炉管、推舟机构、气路系统和真空系统。恒温是PECVD工艺流程中比较重要的一步，就是将送入反应炉管的硅片及石墨舟从室温加热到PECVD反应所需温度，并使石墨舟的截面温度进行均匀分布，这一工艺步骤大概要占据整个工艺流程的三分之二的时间，所以如何让硅片及石墨舟迅速高质量的完成恒温步骤，对于降低生产成本，提高生产效率具有积极作用。而目前，缺少缩短恒温时间的技术。基于此，提出本发明。
发明内容
为解决上述的PECVD恒温时间过长、转化效率低的技术问题，本发明提供了一种节能高效的PECVD反应炉管装置，通过电磁感应加热，提高加热速度，通过电磁感应的磁场分布增强化学气相沉积，提高转化效率。
本发明的技术方案如下：
一种节能高效的PECVD反应炉管装置，包括外侧炉体、加热炉体、纤维保温圈、电磁感应加热装置、石墨舟、推杆、支撑杆及法兰盘，所述法兰盘设置在外侧炉体的上下两端，法兰盘与外侧炉体之间设置纤维保温圈，所述支撑杆设置在加热炉体内，石墨舟设置在支撑杆上，所述电磁感应加热装置的电磁感应线圈环绕石墨舟设置；所述推杆包括上推杆和下推杆，下推杆上设置放置槽，上推杆伸出炉管的两端，下推杆位于炉管内。
进一步的，所述电磁感应线圈为矩形电磁感应线圈。
进一步的，所述推杆为可伸缩推杆。
进一步的，所述炉管装置的两端均设置推杆。
进一步的，所述维保温圈的材质为石棉。
进一步的，所述外侧炉体为石英炉体。
本发明的有益效果:
本发明采用电磁感应加热线圈对石墨舟进行辅助加热，相对于普通灯管辅助加热，电磁感应加热速度快，节约电能，并且电磁感应线圈是环绕在石墨舟上，相较于普通加热为内加热方式，通过其电磁感应的磁场分布可以增强化学气相沉积，提高转化效率，进而可以缩短硅片和石墨舟的恒温时间。
附图说明
图1是实施例节能高效的PECVD反应炉管零件总装图(局部剖视图)。
图2是实施例炉管装置内部进行电磁辅助加热的装配示意图。
图3是实施例炉管装置中推杆的零件示意图。
附图中：1.前法兰盘；2.纤维保温圈；3.电磁感应加热装置；4.外侧炉体；5.石墨舟；6.后法兰盘；7推杆，8.支撑杆；9.电磁加热线圈，710.上推杆；711.下推杆；712.放置槽。
具体实施方式
下面结合具体实施例对本发明做进一步详细说明。
实施例
一种节能高效的PECVD反应炉管装置，如图1-图2所示，包括前法兰盘1、纤维保温圈2、电磁感应加热装置3、外侧炉体4、石墨舟5、后法兰盘6、推杆7、支撑杆8、电磁加热线圈9。推杆7如图3所示，包括上推杆710、下推杆711和设置在下推杆上的放置槽712，上推杆710和下推杆711为可伸缩连接。该炉管装置的两端均设置推杆，采用伸缩式双向推送可对硅片进行快速的稳定的推送。
前法兰盘1和后法兰盘6分别设置于外侧炉体4的前后两端，法兰盘与炉体中间设置纤维保温圈2进行保温，可以减少热能散失。
外侧炉体4内为加热炉体，加热炉体内部设置有支撑杆8，支撑杆8上设置石墨舟5，上推杆710伸出炉管的两端，下推杆710位于炉管内，上推杆位于炉体外的一端连有操作手柄。
电磁感应加热装置3位于石墨舟5的外侧，电磁加热线圈9在石墨舟外侧环绕，用于对石墨舟进行辅助加热，本装置可以对送入反应炉管的硅片及石墨舟进行迅速升温，提高转化效率。
相对于普通灯管辅助加热，电磁感应加热速度快，节约电能。电磁感应线圈是环绕在石墨舟上，相较于现有的内加热方式，通过其电磁感应的磁场分布可以增强化学气相沉积，提高转化效率。
节能高效的PECVD反应炉管装置工作原理：炉管进行恒温处理时，硅片置于放置槽12上，通过可伸缩的推杆7将硅片送入反应炉，通过外侧炉体4以及电磁感应加热装置3对硅片及石墨舟5进行迅速加热，通过支撑杆8对电磁感应加热装置3及石墨舟5进行固定，前法兰盘1及后法兰盘6进行密封，利用纤维保温圈2进行保温。
与现有普通的反应炉管装置相比，同等条件下，利用本发明的节能高效的PECVD反应炉管装置，恒温时间缩短约20％，节约电能约10％，转化效率提高约25％。
以上所述的实施例仅是对本发明的优选实施方式进行描述，并非对本发明的范围进行限定，在不脱离本发明设计精神的前提下，本领域普通技术人员对本发明的技术方案作出的各种变形和改进，均应落入本发明权利要求书确定的保护范围内。
Claims (5)
1.一种节能高效的PECVD反应炉管装置，其特征在于，包括外侧炉体、加热炉体、纤维保温圈、电磁感应加热装置、石墨舟、推杆、支撑杆及法兰盘，所述法兰盘设置在外侧炉体的上下两端，法兰盘与外侧炉体之间设置纤维保温圈，所述支撑杆设置在加热炉体内，石墨舟设置在支撑杆上，所述电磁感应加热装置的电磁感应线圈环绕石墨舟设置；所述推杆包括上推杆和下推杆，下推杆上设置放置槽，上推杆伸出炉管的两端，下推杆位于炉管内。
2.根据权利要求1所述的节能高效的PECVD反应炉管装置，其特征在于，所述推杆为可伸缩推杆。
3.根据权利要求1所述的节能高效的PECVD反应炉管装置，其特征在于，所述炉管装置的两端均设置推杆。
4.根据权利要求1所述的节能高效的PECVD反应炉管装置，其特征在于，所述维保温圈的材质为石棉。
5.根据权利要求1所述的节能高效的PECVD反应炉管装置，其特征在于，所述外侧炉体为石英炉体。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210442912.9A CN114807901B (zh) | 2022-04-25 | 2022-04-25 | 节能高效的pecvd反应炉管装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210442912.9A CN114807901B (zh) | 2022-04-25 | 2022-04-25 | 节能高效的pecvd反应炉管装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN114807901A true CN114807901A (zh) | 2022-07-29 |
| CN114807901B CN114807901B (zh) | 2024-01-26 |
Family
ID=82507509
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210442912.9A Active CN114807901B (zh) | 2022-04-25 | 2022-04-25 | 节能高效的pecvd反应炉管装置 |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN114807901B (zh) |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20010021592A1 (en) * | 2000-03-08 | 2001-09-13 | Jusung Engineering Co., Ltd. | High density plasma chemical vapor deposition apparatus and gap filling method using the same |
| CN104555990A (zh) * | 2013-10-22 | 2015-04-29 | 凯尔凯德新材料科技泰州有限公司 | 一种碳化石墨化连续型高温炉及使用方法 |
| CN104561930A (zh) * | 2015-01-08 | 2015-04-29 | 北京七星华创电子股份有限公司 | 一种用于卧式半导体设备的石墨舟推送装置 |
| US20180073147A1 (en) * | 2016-09-13 | 2018-03-15 | Yu-Shun Chang | Remote plasma generator of remote plasma-enhanced chemical vapor deposition (pecvd) system |
| EP3301204A1 (en) * | 2016-09-30 | 2018-04-04 | Tempress IP B.V. | A chemical vapour deposition apparatus and use thereof |
| CN209537622U (zh) * | 2018-12-21 | 2019-10-25 | 湖南红太阳光电科技有限公司 | 一种管式pecvd的真空反应炉管 |
| CN209636318U (zh) * | 2019-01-08 | 2019-11-15 | 深圳丰盛装备股份有限公司 | 一种pecvd辅助加热装置 |
-
2022
- 2022-04-25 CN CN202210442912.9A patent/CN114807901B/zh active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20010021592A1 (en) * | 2000-03-08 | 2001-09-13 | Jusung Engineering Co., Ltd. | High density plasma chemical vapor deposition apparatus and gap filling method using the same |
| CN104555990A (zh) * | 2013-10-22 | 2015-04-29 | 凯尔凯德新材料科技泰州有限公司 | 一种碳化石墨化连续型高温炉及使用方法 |
| CN104561930A (zh) * | 2015-01-08 | 2015-04-29 | 北京七星华创电子股份有限公司 | 一种用于卧式半导体设备的石墨舟推送装置 |
| US20180073147A1 (en) * | 2016-09-13 | 2018-03-15 | Yu-Shun Chang | Remote plasma generator of remote plasma-enhanced chemical vapor deposition (pecvd) system |
| EP3301204A1 (en) * | 2016-09-30 | 2018-04-04 | Tempress IP B.V. | A chemical vapour deposition apparatus and use thereof |
| CN209537622U (zh) * | 2018-12-21 | 2019-10-25 | 湖南红太阳光电科技有限公司 | 一种管式pecvd的真空反应炉管 |
| CN209636318U (zh) * | 2019-01-08 | 2019-11-15 | 深圳丰盛装备股份有限公司 | 一种pecvd辅助加热装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN114807901B (zh) | 2024-01-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN110042370B (zh) | 一种管式pecvd设备的反应室结构 | |
| CN214468572U (zh) | 一种制氢装置和制氢系统 | |
| CN209537622U (zh) | 一种管式pecvd的真空反应炉管 | |
| CN114807901A (zh) | 节能高效的pecvd反应炉管装置 | |
| CN203605506U (zh) | U型真空热管式真空光热光电转换玻璃管 | |
| CN209101582U (zh) | 一种腔式太阳能吸热器装置 | |
| CN108344260A (zh) | 木业用板材烘干装置 | |
| CN111354839B (zh) | 一种退火炉的加热控制方法及退火炉 | |
| CN114016004B (zh) | 一种避免炉内掉片的石墨舟前电极改造结构 | |
| CN210464014U (zh) | 一种生产一氧化硅的多反应器真空炉 | |
| CN108317742A (zh) | 一种基于光谱分频技术的太阳能电热多级利用装置 | |
| CN101830634B (zh) | 太阳能真空管高频电封离装置及其封离方法 | |
| CN211529964U (zh) | 一种具有辅助加热装置的退火炉 | |
| CN101210745A (zh) | 新型太阳能热发电和供热装置 | |
| CN110307724B (zh) | 一种生产一氧化硅的多反应器真空炉 | |
| CN110762852B (zh) | 一种槽式聚光集热电解制氢的真空直通式集热管 | |
| CN108878289B (zh) | 高效电池退火工艺 | |
| CN107190326B (zh) | 可实现残余热应力消除处理的太阳能电池用硅片扩散炉 | |
| CN220475962U (zh) | 一种用于光伏设备微波辅助加热系统 | |
| CN213694206U (zh) | 一种高效传热的加热器保护管 | |
| CN201051723Y (zh) | 光能变换器 | |
| CN209131413U (zh) | 一种烧结炉的冷却装置 | |
| CN105115168A (zh) | 一种光电太空能全自动一体机热水器 | |
| CN100573782C (zh) | 超高压汞灯电极的低能耗烧氢装置 | |
| CN212925163U (zh) | 一种石墨舟的移载机构及半导体加工设备 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |