CN114800254B - Wax-free pad for polishing and preparation method thereof - Google Patents
Wax-free pad for polishing and preparation method thereof Download PDFInfo
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- CN114800254B CN114800254B CN202210280658.7A CN202210280658A CN114800254B CN 114800254 B CN114800254 B CN 114800254B CN 202210280658 A CN202210280658 A CN 202210280658A CN 114800254 B CN114800254 B CN 114800254B
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/22—Lapping pads for working plane surfaces characterised by a multi-layered structure
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D18/00—Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for
- B24D18/0009—Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for using moulds or presses
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D18/00—Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for
- B24D18/0072—Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for using adhesives for bonding abrasive particles or grinding elements to a support, e.g. by gluing
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
Abstract
The invention relates to a wax-free pad for polishing and a preparation method thereof, wherein a polishing layer is bonded on one side surface of a porous pad layer, a liquid storage layer is arranged in a substrate layer, the other side surface of the porous pad layer is bonded with the substrate layer, and polishing liquid is added into the liquid storage layer in the substrate layer to prepare the wax-free pad for polishing.
Description
Technical Field
The invention belongs to the technical field of polishing materials, and particularly relates to a wax-free pad for polishing and a preparation method thereof.
Background
The chemical mechanical planarization process in the semiconductor preparation process refers to the following steps: the wafer is fixed at the upper end of the platen and brought into contact with the surface of the polishing pad mounted on the platen, and then is chemically treated by supplying slurry with the platen and the upper end relatively moved, thereby mechanically flattening the irregularities of the wafer surface.
The polishing pad is an essential component that plays an important role in the CMP process. Generally, a polishing pad is composed of a polyurethane-based resin, and has grooves on the surface thereof for the mass flow of slurry and pores for assisting the fine flow of slurry. The pores in the polishing pad may be formed by using a solid-phase foaming agent having voids, a liquid-phase foaming agent filled with a volatile liquid, an inert gas, fibers, etc., or by generating a gas through a chemical reaction, and conventional polishing liquids to which inorganic rigid particles are added, but have high hardness to form scratches or pits on the surface of a silicon crystal material when used for polishing a semiconductor silicon crystal material, thereby affecting the polishing effect.
Disclosure of Invention
In order to solve the above technical problems, an object of the present invention is to provide a wax-free pad for polishing and a method for preparing the same.
The purpose of the invention can be realized by the following technical scheme:
a wax-free pad for polishing comprises a polishing layer, a porous gasket layer, a basal layer and a liquid storage layer, wherein a plurality of cavities are arranged in the polishing layer, the cavities extend from the upper surface of the polishing layer to the surface of the porous gasket layer, the liquid storage layer is arranged in the basal layer and is communicated with the porous gasket layer, and polishing liquid is arranged in the liquid storage layer;
the polishing solution is prepared by the following steps:
step S1, uniformly mixing phenol and sodium hydroxide according to the weight ratio of 1: 100, then adding 15% by mass of formaldehyde solution to prepare a mixed solution, heating to 90 ℃, preserving heat and reacting for 1 hour to prepare a resin solution, wherein the molar ratio of phenol to formaldehyde is controlled to be 1.1-1.2: 1;
in the step S1, phenol and formaldehyde are subjected to addition reaction to prepare a phenolic resin solution;
s2, adding the nano-diamond into deionized water, performing ultrasonic dispersion for 30min to obtain a dispersion liquid, then dropwise adding a resin liquid, continuing performing ultrasonic treatment for 30min to obtain a mixed liquid, adding the mixed liquid into a hydrothermal kettle with a polytetrafluoroethylene inner container, heating to 180 ℃, performing hydrothermal reaction for 6h, cooling to room temperature after the reaction is finished, centrifuging, washing and drying to obtain a primary product, and controlling the dosage ratio of the nano-diamond, the deionized water and the resin liquid to be 15-20 mg: 50 mL: 100mg;
in the step S2, the nano-diamond is added into the resin liquid, and the resin liquid can coat the diamond particles to form a sphere, namely the core-shell microsphere taking the nano-diamond as a core and the phenolic resin as a shell.
And S3, placing the prepared primary product in a crucible, heating to 350 ℃ in the nitrogen atmosphere, preserving heat for 2h, heating to 800 ℃ and preserving heat for 2h, cooling and taking out to obtain polishing particles, adding the polishing particles into deionized water, dropwise adding a sodium hydroxide solution with the mass fraction of 10% to adjust the pH until the pH is =10, and thus obtaining the polishing solution.
The core-shell structured microspheres obtained in step S3 are carbonized at 350 and 800 ℃ to form polishing particles, which are a composite material of carbon-coated nanodiamond particles, which are excellent polishing materials, but the high hardness of which causes scratches or pits on the surface of a silicon crystal material when used for polishing a semiconductor silicon crystal material, so that the present invention forms a soft shell by preparing a core-shell structured diamond polishing particle, so that the surface is not damaged when polishing is performed using the polishing particles.
Further: the porous pad layer is bonded to the polishing layer, and the base layer is bonded to the porous pad layer.
Further, the method comprises the following steps: the porous gasket layer is a polyester sheet material layer, and a plurality of through holes are uniformly formed in the porous gasket layer.
Further: the base layer is a polypropylene material layer with the thickness of 3-5 mm.
Further, the method comprises the following steps: the polishing layer is made of an elastic polishing material, and the elastic polishing material comprises the following steps:
polyether glycol is dehydrated in vacuum at 100 ℃ for 4h, then cooled to room temperature, modified diisocyanate is slowly dripped, the temperature is increased to 65 ℃, the heat preservation reaction is carried out for 1h, then the temperature is increased to 80 ℃, the heat preservation reaction is carried out for 2h, then the defoaming is carried out in vacuum, then 3,3 '-dichloro-4, 4' -diaminodiphenylmethane and nano cerium oxide are added, the auxiliary agent is added after the stirring is carried out for 15s, the high-speed stirring is carried out for 30s, then the mixture is poured into a mould for foaming, and the density after the foaming is controlled to be 0.42g/cm 3 Preparing microporous elastomer, curing at 100 deg.c for 3-4 hr to obtain elastic polishing material, and controlling the weight ratio of polyether glycol and modified diisocyanate in 10: 1 and the weight ratio of polyether glycol, 3 '-dichloro-4, 4' -diamino diphenyl methane, nanometer cerium oxide and assistant in 10: 0.5-0.8: 1-2: 0.1-0.3.
Further: the assistant is formed by mixing a catalyst, an antioxidant and a flatting agent according to the weight ratio of 3: 1: 0.5.
A method for preparing a wax-free pad for polishing comprises the following steps:
and bonding the polishing layer on one side surface of the porous gasket layer, arranging a liquid storage layer in the substrate layer, bonding the substrate layer on the other side surface of the porous gasket layer, and adding polishing liquid into the liquid storage layer in the substrate layer to obtain the wax-free pad for polishing.
The invention has the beneficial effects that:
the wax-free pad for polishing is characterized in that a polishing layer is bonded on one side surface of a porous pad layer, a liquid storage layer is arranged in the substrate layer, the substrate layer is bonded on the other side surface of the porous pad layer, polishing liquid is added into the liquid storage layer in the substrate layer to prepare the wax-free pad for polishing, the traditional polishing process of a wax-bonded sheet is abandoned, the polishing layer is prepared by an elastic polishing material, the elastic polishing material is a modified polyurethane foaming elastomer, the special porous and elastic structure enables the elastic polishing material not to wear crystals during polishing, and the added nano cerium oxide endows the elastic polishing material with good wear resistance and is convenient to use for a long time.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the description below are only some embodiments of the present invention, and it is obvious for those skilled in the art that other drawings can be obtained according to the drawings without creative efforts.
FIG. 1 is a schematic view of a wax-free pad polishing layer according to the present invention.
FIG. 2 is a cross-sectional view of a wax-free pad of the present invention.
In the drawings, the components represented by the respective reference numerals are listed below:
1. a polishing layer; 2. a porous gasket layer; 3. a base layer; 4. a liquid storage layer.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Referring to fig. 1-2, the wax-free pad for polishing according to the present invention includes a polishing layer 1, a porous pad layer 2, a substrate layer 3 and a liquid storage layer 4, wherein a plurality of cavities are formed in the polishing layer 1, the cavities extend from the upper surface of the polishing layer 1 to the surface of the porous pad layer 2, the porous pad layer 2 is bonded to the polishing layer 1, the substrate layer 3 is bonded to the porous pad layer 2, the liquid storage layer 4 is formed in the substrate layer 3, the liquid storage layer 4 is communicated with the porous pad layer 2, and a polishing liquid is formed in the liquid storage layer 4.
Example 1
The polishing solution is prepared by the following steps:
step S1, uniformly mixing phenol and sodium hydroxide according to the weight ratio of 1: 100, then adding 15% by mass of formaldehyde solution to prepare a mixed solution, heating to 90 ℃, preserving heat and reacting for 1h to prepare a resin solution, wherein the molar ratio of phenol to formaldehyde is controlled to be 1.1: 1;
s2, adding the nano-diamond into deionized water, performing ultrasonic dispersion for 30min to obtain a dispersion liquid, then dropwise adding a resin liquid, continuing performing ultrasonic treatment for 30min to obtain a mixed liquid, adding the mixed liquid into a hydrothermal kettle with a polytetrafluoroethylene inner container, heating to 180 ℃, performing hydrothermal reaction for 6h, cooling to room temperature after the reaction is finished, centrifuging, washing and drying to obtain a primary product, and controlling the dosage ratio of the nano-diamond, the deionized water and the resin liquid to be 15 mg: 50 mL: 100mg;
and S3, placing the prepared primary product in a crucible, heating to 350 ℃ in the nitrogen atmosphere, preserving heat for 2h, heating to 800 ℃ and preserving heat for 2h, cooling and taking out to obtain polishing particles, adding the polishing particles into deionized water, dropwise adding a sodium hydroxide solution with the mass fraction of 10% to adjust the pH until the pH is =10, and thus obtaining the polishing solution.
Example 2
The polishing solution is prepared by the following steps:
step S1, uniformly mixing phenol and sodium hydroxide according to the weight ratio of 1: 100, then adding a formaldehyde solution with the mass fraction of 15% to prepare a mixed solution, heating to 90 ℃, preserving heat and reacting for 1 hour to prepare a resin solution, wherein the molar ratio of the phenol to the formaldehyde is controlled to be 1.1: 1;
s2, adding the nano-diamond into deionized water, performing ultrasonic dispersion for 30min to obtain a dispersion liquid, then dropwise adding a resin liquid, continuing performing ultrasonic treatment for 30min to obtain a mixed liquid, adding the mixed liquid into a hydrothermal kettle with a polytetrafluoroethylene inner container, heating to 180 ℃, performing hydrothermal reaction for 6h, cooling to room temperature after the reaction is finished, centrifuging, washing and drying to obtain a primary product, and controlling the dosage ratio of the nano-diamond, the deionized water and the resin liquid to be 18 mg: 50 mL: 100mg;
and S3, placing the prepared primary product in a crucible, heating to 350 ℃ in the nitrogen atmosphere, preserving heat for 2h, heating to 800 ℃ and preserving heat for 2h, cooling and taking out to obtain polishing particles, adding the polishing particles into deionized water, dropwise adding a sodium hydroxide solution with the mass fraction of 10% to adjust the pH until the pH is =10, and thus obtaining the polishing solution.
Example 3
The polishing solution is prepared by the following steps:
step S1, uniformly mixing phenol and sodium hydroxide according to the weight ratio of 1: 100, then adding 15% by mass of formaldehyde solution to prepare a mixed solution, heating to 90 ℃, preserving heat and reacting for 1h to prepare a resin solution, wherein the molar ratio of phenol to formaldehyde is controlled to be 1.2: 1;
s2, adding the nano-diamond into deionized water, performing ultrasonic dispersion for 30min to obtain a dispersion liquid, then dropwise adding a resin liquid, continuing performing ultrasonic treatment for 30min to obtain a mixed liquid, adding the mixed liquid into a hydrothermal kettle with a polytetrafluoroethylene inner container, heating to 180 ℃, performing hydrothermal reaction for 6h, cooling to room temperature after the reaction is finished, centrifuging, washing and drying to obtain a primary product, and controlling the dosage ratio of the nano-diamond, the deionized water and the resin liquid to be 20 mg: 50 mL: 100mg;
and S3, placing the prepared primary product in a crucible, heating to 350 ℃ in the nitrogen atmosphere, preserving heat for 2h, heating to 800 ℃ and preserving heat for 2h, cooling and taking out to obtain polishing particles, adding the polishing particles into deionized water, dropwise adding a sodium hydroxide solution with the mass fraction of 10% to adjust the pH until the pH is =10, and thus obtaining the polishing solution.
Example 4
The polishing layer is made of elastic polishing materials, and the elastic polishing materials comprise the following steps:
polyether glycol is dehydrated in vacuum at 100 ℃ for 4h, then cooled to room temperature, modified diisocyanate (Shandong Lanxingdong chemical Co., ltd.; carbodiimide modified 4,4' -diphenylmethane diisocyanate) is slowly dropped, heated to 65 ℃, kept warm for reaction for 1h, then heated to 80 ℃, kept warm for reaction for 2h, then defoamed in vacuum, then 3,3' -dichloro-4, 4' -diaminodiphenylmethane and nano cerium oxide are added, auxiliary agent is added after stirring for 15s, high-speed stirring is carried out for 30s, then the mixture is poured into a mould for foaming, and the density after foaming is controlled to be 0.42g/cm 3 Preparing microporous elastomer, curing at 100 deg.c for 3 hr to obtain elastic polishing material, and controlling the weight ratio of polyether diol to modified diisocyanate in 10: 1 and the weight ratio of polyether diol to 3,3 '-dichloro-4, 4' -diamino diphenyl methane to nano cerium oxide to assistant in 10: 0.5: 1: 0.1.
The auxiliary agent is formed by mixing N, N-dimethylcyclohexylamine, an antioxidant 1010 and polydimethylsiloxane according to the weight ratio of 3: 1: 0.5.
Example 5
The polishing layer is made of elastic polishing materials, and the elastic polishing materials comprise the following steps:
vacuum dehydrating polyether glycol at 100 deg.C for 4 hr, cooling to room temperature, and slowly adding modified diisocyanate dropwise (Shandong Lanxingdong chemical Co., ltd.; carbodiimide)Modified 4,4' -diphenylmethane diisocyanate), heating to 65 ℃, carrying out heat preservation reaction for 1 hour, heating to 80 ℃, carrying out heat preservation reaction for 2 hours, defoaming in vacuum, adding 3,3' -dichloro-4, 4' -diaminodiphenylmethane and nano cerium oxide, stirring for 15s, adding an auxiliary agent, stirring at a high speed for 30s, pouring into a mold for foaming, and controlling the density after foaming to be 0.42g/cm 3 Preparing microporous elastomer, curing at 100 deg.c for 4 hr to obtain elastic polishing material, and controlling the weight ratio of polyether diol to modified diisocyanate in 10: 1 and the weight ratio of polyether diol to 3,3 '-dichloro-4, 4' -diamino diphenyl methane to nano cerium oxide to assistant in 10: 0.6: 1.5: 0.2.
Example 6
The polishing layer is made of elastic polishing materials, and the elastic polishing materials comprise the following steps:
polyether glycol is dehydrated in vacuum at 100 ℃ for 4h, then cooled to room temperature, modified diisocyanate (Shandong Lanxingdong chemical Co., ltd.; carbodiimide modified 4,4' -diphenylmethane diisocyanate) is slowly dropped, heated to 65 ℃, kept warm for reaction for 1h, then heated to 80 ℃, kept warm for reaction for 2h, then defoamed in vacuum, then 3,3' -dichloro-4, 4' -diaminodiphenylmethane and nano cerium oxide are added, auxiliary agent is added after stirring for 15s, high-speed stirring is carried out for 30s, then the mixture is poured into a mould for foaming, and the density after foaming is controlled to be 0.42g/cm 3 Preparing microporous elastomer, curing at 100 deg.c for 4 hr to obtain elastic polishing material, and controlling the weight ratio of polyether glycol to modified diisocyanate in 10: 1 and the weight ratio of polyether glycol, 3 '-dichloro-4, 4' -diamino diphenyl methane, nanometer cerium oxide and assistant in 10: 0.8: 2: 0.3.
Example 7
A method for preparing a wax-free pad for polishing comprises the following steps:
the polishing layer 1 prepared in example 5 was bonded to one side surface of the porous pad layer 2, the liquid storage layer 4 was formed in the base layer 3, the base layer 3 was bonded to the other side surface of the porous pad layer 2, and the polishing liquid prepared in example 1 was added to the liquid storage layer 4in the base layer 3 to prepare a wax-free pad for polishing.
Example 8
A method for preparing a wax-free pad for polishing comprises the following steps:
the polishing layer 1 prepared in example 6 was bonded to one side surface of the porous pad layer 2, the liquid storage layer 4 was formed in the base layer 3, the base layer 3 was bonded to the other side surface of the porous pad layer 2, and the polishing liquid prepared in example 2 was added to the liquid storage layer 4in the base layer 3 to prepare a wax-free pad for polishing.
Example 9
A method for preparing a wax-free pad for polishing comprises the following steps:
the polishing layer 1 prepared in example 7 was bonded to one side surface of the porous pad layer 2, the liquid storage layer 4 was formed in the base layer 3, the base layer 3 was bonded to the other side surface of the porous pad layer 2, and the polishing liquid prepared in example 3 was added to the liquid storage layer 4in the base layer 3 to prepare a wax-free pad for polishing.
Comparative example 1
This comparative example is a polyurethane polishing pad.
Comparative example 2
This comparative example was compared with example 7, using nanodiamond and deionized water as the polishing liquid.
The polishing pads prepared in examples 7 to 9 and comparative examples 1 to 2 were examined for polishing performance, and the results are shown in the following table:
1. initial sample:
(1) The polishing pad was cut into a 18-in circle and mounted on a chemical mechanical polishing apparatus (manufacturer: dongguan lapping precision grinding machine manufacturing Co., ltd., model: KD18 BX), and raising treatment and surface dressing were carried out for 15min with a diamond disk.
(2) Under the conditions that the rotation speed of a grinding disc is 50r/min and the polishing pressure is 21.2kPa, polishing liquid is supplied at the speed of 100mL/min, and a 4-in silicon wafer with an oxide film surface is polished for 2min. And after polishing, measuring the thickness of any 4 points in the silicon wafer surface, and dividing the thickness by the polishing time to obtain the polishing rate (nm/min) of each point. The average value of the polishing rates at 49 points was recorded as the polishing rate R of the silicon wafer, and the standard deviation δ was found.
(3) The flatness of the polishing was evaluated by the following formula, and the smaller the flatness value, the better the flatness of the silicon wafer was shown:
flatness (%) = (δ/R) × 100%
2. Standing the sample:
(1) After the polishing pad was soaked in water at 25 ℃ and left standing for 24 hours, the same treatment steps as for the initial sample were carried out, and the polishing rate and the flatness were recorded.
3. And detecting and recording the number of scratches with the length of more than 0.16um on the polished surface of the silicon wafer by adopting a surface quality detector, thereby evaluating the scratch property.
It can be seen from the above table that the polishing pads prepared in examples 7-9 of the present invention have better polishing effect and less damage to the silicon wafer surface.
In the description herein, references to the description of "one embodiment," "an example," "a specific example" or the like are intended to mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
The foregoing is illustrative and explanatory only and is not intended to be exhaustive or to limit the invention to the precise embodiments described, and various modifications, additions, and substitutions may be made by those skilled in the art without departing from the scope of the invention or exceeding the scope of the claims.
Claims (8)
1. A wax-free pad for polishing, comprising a polishing layer (1), a porous pad layer (2), a base layer (3) and a liquid storage layer (4), characterized in that: a plurality of cavities are formed in the polishing layer (1), the cavities extend from the upper surface of the polishing layer (1) to the surface of the porous gasket layer (2), a liquid storage layer (4) is arranged in the base layer (3), and polishing liquid is arranged in the liquid storage layer (4);
the polishing solution comprises the following steps:
step S1, uniformly mixing phenol and sodium hydroxide according to the weight ratio of 1: 100, then adding a formaldehyde solution to prepare a mixed solution, heating to 90 ℃, preserving heat and reacting for 1h to prepare a resin solution;
s2, adding the nano-diamond into deionized water, performing ultrasonic dispersion for 30min to obtain a dispersion liquid, then dropwise adding a resin liquid, continuing performing ultrasonic treatment for 30min to obtain a mixed liquid, adding the mixed liquid into a hydrothermal kettle with a polytetrafluoroethylene inner container, heating to 180 ℃, performing hydrothermal reaction for 6h, cooling to room temperature after the reaction is finished, centrifuging, washing, and drying to obtain a primary product;
s3, placing the prepared primary product in a crucible, heating to 350 ℃ in a nitrogen atmosphere, preserving heat for 2h, then heating to 800 ℃, preserving heat for 2h, then cooling and taking out to obtain polishing particles, then adding the polishing particles into deionized water, and adjusting the pH until the pH is =10 to obtain a polishing solution;
in the step S1, the molar ratio of the phenol to the formaldehyde is controlled to be 1.1-1.2: 1, and in the step S2, the dosage ratio of the nano-diamond, the deionized water and the resin liquid is controlled to be 15-20 mg: 50 mL: 100mg.
2. The wax-free pad for polishing as claimed in claim 1, wherein: the porous pad layer (2) is bonded to the polishing layer (1), and the base layer (3) is bonded to the porous pad layer (2).
3. The wax-free pad for polishing as claimed in claim 1, wherein: the porous pad layer (2) is a terylene sheet material layer, and a plurality of through holes are uniformly arranged on the terylene sheet material layer.
4. The wax-free pad for polishing as claimed in claim 1, wherein: the base layer (3) is a polypropylene material layer with the thickness of 3-5 mm.
5. The wax-free pad for polishing as set forth in claim 1, wherein: the polishing layer (1) is made of an elastic polishing material, and the elastic polishing material comprises the following steps:
the preparation method comprises the following steps of dehydrating polyether glycol at 100 ℃ in vacuum for 4 hours, cooling to room temperature, slowly dropwise adding modified diisocyanate, heating to 65 ℃, carrying out heat preservation reaction for 1 hour, heating to 80 ℃, carrying out heat preservation reaction for 2 hours, defoaming in vacuum, adding 3,3 '-dichloro-4, 4' -diaminodiphenylmethane and nano cerium oxide, stirring for 15 seconds, adding an auxiliary agent, stirring at high speed for 30 seconds, pouring into a mold for foaming, controlling the density after foaming to be 0.42g/cm < 3 >, preparing a microporous elastomer, and curing at 100 ℃ for 3-4 hours to obtain the elastic polishing material.
6. The wax-free pad for polishing as set forth in claim 5, wherein: the weight ratio of the polyether glycol to the modified diisocyanate is controlled to be 10: 1, and the weight ratio of the polyether glycol to the 3,3 '-dichloro-4, 4' -diaminodiphenylmethane to the nano cerium oxide to the auxiliary agent is controlled to be 10: 0.5-0.8: 1-2: 0.1-0.3.
7. The wax-free pad for polishing as claimed in claim 6, wherein: the auxiliary agent is formed by mixing a catalyst, an antioxidant and a flatting agent according to the weight ratio of 3: 1: 0.5.
8. The method of claim 1, wherein the step of preparing a wax-free pad for polishing comprises: the method comprises the following steps:
bonding the polishing layer (1) on one side surface of the porous gasket layer (2), arranging a liquid storage layer (4) in the substrate layer (3), bonding the substrate layer (3) on the other side surface of the porous gasket layer (2), and adding polishing liquid into the liquid storage layer (4) in the substrate layer (3) to obtain the wax-free pad for polishing.
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Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101586004A (en) * | 2008-05-23 | 2009-11-25 | 映麟有限公司 | Constituent for polishing and manufacturing method thereof |
| CN102248494A (en) * | 2010-05-19 | 2011-11-23 | 智胜科技股份有限公司 | Substrate layer, grinding pad and grinding method |
| CN102796460B (en) * | 2012-08-31 | 2014-05-07 | 安特迪（天津）科技有限公司 | Silicon dioxide-based CMP (Chemical Mechanical Polishing) solution and preparation method thereof |
| CN103725256A (en) * | 2013-12-31 | 2014-04-16 | 上海集成电路研发中心有限公司 | Grinding particle system and polishing liquid for CMP (Chemical Mechanical Polishing) |
| CN105950114B (en) * | 2016-05-04 | 2018-05-15 | 无锡斯达新能源科技股份有限公司 | A kind of outer membrane mixing diamond spherical abrasive material and preparation method thereof |
| CN109605137A (en) * | 2018-12-27 | 2019-04-12 | 衢州晶哲电子材料有限公司 | A kind of unpowered rotation of silicon wafer is without wax polishing template and its polishing method |
| CN109500729B (en) * | 2019-01-25 | 2021-05-18 | 云南蓝晶科技有限公司 | Wax-free adsorption pad for sapphire polishing |
| JP7267847B2 (en) * | 2019-06-12 | 2023-05-02 | 株式会社荏原製作所 | Polishing head, polishing apparatus provided with the polishing head, and polishing method using the polishing apparatus |
| CN110480497A (en) * | 2019-08-16 | 2019-11-22 | 天津大学 | A kind of spiral fluid dynamic pressure polishing pad and its polishing method |
| CN214817690U (en) * | 2021-06-24 | 2021-11-23 | 东莞市欣帕得光电科技有限公司 | Mechanical slotting polishing pad for blue glass |
| CN215659669U (en) * | 2021-09-02 | 2022-01-28 | 上海芯莘科技有限公司 | Soft polishing pad for polishing semiconductor substrate |
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2022
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