CN114790110A - Hot-pressing photonic polycrystalline semiconductor material and preparation method and application thereof - Google Patents
Hot-pressing photonic polycrystalline semiconductor material and preparation method and application thereof Download PDFInfo
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Abstract
The invention relates to the technical field of medical equipment, in particular to a hot-pressing photonic polycrystalline semiconductor material and a preparation method and application thereof. The hot pressed photon polycrystal semiconductor material consists of inorganic powder 10-33 weight portions, silicate 5-15 weight portions, RE material 2-10 weight portions, polymer 15-30 weight portions, penetrant 5-15 weight portions, and solvent 35-65 weight portions. The hot-pressing photon polycrystalline semiconductor material not only has higher infrared emissivity, but also can continuously and accurately generate a peak waveband of 5-7 microns.
Description
Technical Field
The invention relates to the technical field of medical equipment, in particular to a hot-pressing photonic polycrystalline semiconductor material and a preparation method and application thereof.
Background
The human body has two main pathways to obtain energy from food, one pathway is anaerobic metabolism, and the other pathway is glycolysis, which has low energy efficiency in the past, and generally one unit of glucose can be converted into two units of energy. The other way is aerobic metabolism in cell mitochondria, and the intracellular mitochondria are like a small furnace, and can convert food into energy in a combustion mode under the action of oxygen, and the generation efficiency of the way is higher and is about 16 times of that of anaerobic metabolism. Most of the physiological and psychological activities of human bodies require aerobic metabolism to provide energy, therefore, oxygen is of importance to people, and it is self-evident that under normal conditions, food can generate 2 or 32 units of energy through anaerobic metabolism or aerobic metabolism to maintain life activities, and under the condition of oxygen deficiency, the 'small fire' of mitochondria is insufficient 'combustion' of food, and according to different degrees of oxygen deficiency, the oxygen deficiency metabolism can generate 2 to 32 units of energy, and simultaneously, the insufficient combustion can generate a large amount of harmful garbage such as free radicals, and the harmful garbage is harmful to human health and accelerates aging. Especially in a plateau environment, a human body is easy to generate anoxic metabolism, the oxygen-deficient metabolism can cause that the saturation degree of oxygen carried by erythrocytes in human arteries is not high, the physical dissolved oxygen concentration which can be directly used by tissues in the human body is reduced due to low pressure, the human body is further in an anoxic state, the saturation degree of oxygen carried by the erythrocytes in the human arteries is not high due to the low-pressure anoxia, and the erythrocytes can be conveyed to various tissues to be used for insufficient oxygen.
The far infrared ray wavelength range is generally 2.5 to 30 μm. The 4-30 micron interval wave band is often called 'life light', and the electromagnetic wave with the wavelength can provide weak energy required by human cell tissues. Far infrared can improve the size of water molecule groups in vivo, change the permeability of cell membranes, change the potential difference inside and outside the cell membranes, improve the packed cell volume, enable erythrocytes to be uniformly distributed in blood plasma, and improve the oxygen carrying capacity; meanwhile, the far infrared medium effect can accelerate the oscillation of basic particles in the body, improve the body temperature of the human body, accelerate metabolism, improve biological activity, strengthen the immunity of the human body, remove free radicals in the body and the like. The human body is an organism, the water content in the body is about 60%, and the infrared characteristic absorption peaks of water molecules are 3 and 6 microns.
The applicant previously developed a material with better far infrared emissivity, and applied for a related patent (patent number CN111529945A), and based on the research, the research of this rice aims to provide a hot-pressed photonic polycrystalline semiconductor material capable of generating a peak band of 5-7 microns and high infrared emissivity.
Disclosure of Invention
In order to solve the technical problems, the first aspect of the invention provides a hot-pressed photonic polycrystalline semiconductor material, which comprises, by weight, 10-33 parts of inorganic powder, 5-15 parts of silicate, 2-10 parts of rare earth materials, 15-30 parts of high molecular polymers, 5-15 parts of penetrating agents and 35-65 parts of solvents.
As a preferred technical scheme of the invention, the inorganic powder is an inorganic oxide; the inorganic oxide is at least one selected from zirconia, titanium dioxide, cerium oxide, antimony oxide, zinc oxide, silicon dioxide, aluminum oxide and tin dioxide.
As a preferable technical scheme of the invention, the silicate is a combination of the hedenbergite and the dravite, and the weight ratio of the silicate to the dravite is 1: (2-3).
As a preferable technical scheme of the invention, the rare earth material comprises rare earth salt.
In a preferred embodiment of the present invention, the rare earth salt is at least one selected from the group consisting of cerium acetate, neodymium acetate, samarium acetate, europium acetate, dysprosium acetate, scandium sulfate, holmium acetate, erbium acetate, and cerium acetate.
As a preferred technical scheme of the invention, the rare earth material also comprises a rare earth organic complex; the weight ratio of the rare earth organic complex to the rare earth salt is 1: (1-2).
As a preferred technical scheme of the invention, the raw materials of the rare earth organic complex comprise thenoyltrifluoroacetone and europium chloride.
In a preferred embodiment of the present invention, the penetrating agent includes a nonionic surfactant.
The second aspect of the invention provides a preparation method of a hot-pressed photon polycrystalline semiconductor material, which at least comprises the following steps:
(1) respectively crushing inorganic powder, rare earth materials and silicate, uniformly mixing, and calcining in a high-temperature furnace at 1200 ℃ for 60-80min to obtain a mixture 1;
(2) adding the mixture 1 into a reaction kettle for reaction for 16-20h, wherein the temperature is 900-1000 ℃, the pressure is 10-15MPa, cooling and grinding to obtain a mixture 2;
(3) and (3) stirring the mixture 2 prepared in the step (2) and the penetrating agent in a solvent for 2-4h to obtain a mixture 3, heating the elastomer to 160-170 ℃, adding the mixture 3, stirring for 10-15h, and granulating in an extruder to obtain the elastomer.
The third aspect of the invention provides an application of the hot-pressing photon polycrystalline semiconductor material, and the application field is the technical field of medical equipment.
The invention has the following beneficial effects:
most of human bodies are water, infrared characteristic absorption peaks of water molecules are 3-6 microns, meanwhile, proteins in the bodies can absorb infrared rays of 1-3.5 microns and 5-7 microns through vibration of amido bonds, the absorbed infrared rays can cause quantum vibration of the amido bonds in protein molecules, so that biological energy can be smoothly transmitted from one place to another place to keep growth, development and health of life bodies, and the protein molecules can return to normal state and maintain the transmission of the biological energy if the protein molecules are irradiated by the infrared rays with the wavelengths, but some existing materials on the market need to be generated by means of some large-scale equipment such as quantum lasers and the like and can not be generated continuously, but the hot-pressed photonic polycrystalline semiconductor material in the invention not only has high infrared emissivity, but also can continuously and accurately generate a peak waveband of 5-7 microns, the hot-pressed photonic polycrystalline semiconductor material can be used in wearing equipment of daily life of people.
Drawings
FIG. 1 is a plot of the relative radiant energy spectrum of a hot-pressed photonic polycrystalline semiconductor material in example 3 in the presence of sound; FIG. 2 is a plot of the relative radiation spectrum of the hot-pressed photonic polycrystalline semiconductor material of example 3 in the presence of a light source; FIG. 3 is a graph of the relative radiation energy spectrum of the hot-pressed photonic polycrystalline semiconductor material of example 3 in the presence of acousto-optic.
Detailed Description
The technical features of the technical solutions provided by the present invention are further clearly and completely described below with reference to the specific embodiments, and the scope of protection is not limited thereto.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. To the extent that a definition of a particular term disclosed in the prior art is inconsistent with any definition provided herein, the definition of that term provided herein controls.
As used herein, a feature that is not limited to a single plural form is also intended to include plural forms of the feature unless the context clearly indicates otherwise. It will also be understood that the term "prepared from …," as used herein, is synonymous with "comprising," including, "comprising," "having," "containing," and/or "containing," when used in this specification denotes a stated composition, step, method, article, or apparatus, but does not preclude the presence or addition of one or more other compositions, steps, methods, articles, or apparatuses. Furthermore, the use of "preferred," "preferably," "more preferred," and the like, when describing embodiments of the present invention, is intended to refer to embodiments of the invention that may provide certain benefits, under certain circumstances. However, other embodiments may be preferred, under the same or other circumstances. In addition, the recitation of one or more preferred embodiments does not imply that other embodiments are not useful, nor is it intended to exclude other embodiments from the scope of the invention.
In order to solve the technical problems, the first aspect of the invention provides a hot-pressing photon polycrystalline semiconductor material, which comprises the following raw materials, by weight, 10-33 parts of inorganic powder, 5-15 parts of silicate, 2-10 parts of rare earth materials, 15-30 parts of high polymer, 5-15 parts of penetrating agents and 35-65 parts of solvents.
In a more preferable embodiment, the raw materials of the hot-pressing photon polycrystalline semiconductor material comprise, by weight, 15-20 parts of inorganic powder, 8-12 parts of silicate, 4-6 parts of rare earth materials, 22-27 parts of high polymer, 7-9 parts of penetrating agent and 50-55 parts of solvent.
In a more preferable embodiment, the raw materials of the hot-pressed photon polycrystalline semiconductor material comprise, by weight, 18 parts of inorganic powder, 10 parts of silicate, 5 parts of rare earth material, 25 parts of high polymer, 8 parts of penetrating agent and 52 parts of solvent.
Inorganic powder
In one embodiment, the inorganic powder is an inorganic oxide.
In one embodiment, the inorganic oxide is selected from at least one of zirconia, titania, ceria, antimony oxide, zinc oxide, silica, alumina, tin dioxide.
In a preferred embodiment, the inorganic oxide is a combination of zirconia, ceria, antimony oxide, silica.
In one embodiment, the weight ratio of zirconia, ceria, antimony oxide, silica is 1: (2-2.6): (1.2-1.6): (0.4-0.6), preferably 1: 2.4: 1.4: 0.5.
in a preferred embodiment, the zirconia has an average particle size of 20 to 40 nm.
In a preferred embodiment, the cerium oxide has a length of 10 to 40nm and a diameter of 5 to 10 nm.
In a preferred embodiment, the antimony oxide has an average particle size of 30 to 50 nm.
In a preferred embodiment, the silica is amino hollow mesoporous silica with an average diameter of 300-500 nm.
The sources of the zirconia, the ceria, the antimony oxide and the amino hollow mesoporous silica in the invention are not limited.
The purchase manufacturers of zirconia, ceria and amino hollow mesoporous silica include but are not limited to sufeng nano material science and technology limited; antimony oxide vendors include, but are not limited to, Suzhou sailing Biotechnology Ltd.
Silicates of acid or alkali
In one embodiment, the silicate is a combination of hedenbergite and dravite in a weight ratio of 1: (2-3); preferably 1: 2.5.
the hedenbergite has a double-chain-like structure, and the crystal form thereof is elongated; the tourmaline can emit far infrared rays of 4-14 μm, and can generate weak current similar to that of human nerve, and promote blood circulation.
Rare earth materials
In one embodiment, the rare earth material comprises a rare earth salt.
In one embodiment, the rare earth salt is selected from at least one of cerium acetate, neodymium acetate, samarium acetate, europium acetate, dysprosium acetate, scandium sulfate, holmium acetate, erbium acetate, and cerium acetate.
In a preferred embodiment, the rare earth salt is scandium sulfate (CAS number: 52788-54-2).
In a preferred embodiment, the rare earth material further comprises a rare earth organic complex; the weight ratio of the rare earth organic complex to the rare earth salt is 1: (1-2); preferably 1: (1.2-1.7); more preferably 1: 1.5.
in one embodiment, the starting materials for the rare earth organic complex include thenoyltrifluoroacetone (CAS number: 326-91-0) and europium chloride (CAS number: 1025-76-0).
In one embodiment, the molar ratio of thenoyltrifluoroacetone to europium chloride is 3: 1.
in one embodiment, the method for preparing the rare earth organic complex at least comprises the following steps:
(1) dissolving thenoyl trifluoroacetone in 10 times of anhydrous ethanol, and then adjusting the pH value to 6.5 to obtain a material A;
(2) adding europium chloride into the material A to react for 6 hours at 55 ℃ to obtain a material B;
(3) after the material B is cooled to room temperature, evaporating the absolute ethyl alcohol in the material B to obtain a material C;
(4) and washing the material C5 times with acetone, and drying to constant weight to obtain the rare earth organic complex.
High molecular polymer
In one embodiment, the high molecular weight polymer is a thermoplastic elastomer.
In one embodiment, the thermoplastic elastomer is at least one selected from the group consisting of styrenic block copolymer type thermoplastic elastomers, polyurethane type thermoplastic elastomers, polyolefin type thermoplastic elastomers, and polyamide type thermoplastic elastomers.
In a preferred embodiment, the thermoplastic elastomer is a polyurethane-based thermoplastic elastomer.
In one embodiment, the polyurethane-based thermoplastic elastomer is germany bayer
955U。
Penetrant
In one embodiment, the osmotic agent includes a nonionic surfactant.
In a preferred embodiment, the nonionic surfactant is selected from at least one of long-chain fatty alcohol polyoxyethylene ether, fatty acid polyoxyethylene ester, polyoxyethylene polyoxypropylene block copolymer, alkylphenol polyoxyethylene ether, polyoxyethylene alkylamine, and polyoxyethylene alkylamide; preferably a polyoxyethylene polyoxypropylene block copolymer.
In one embodiment, the polyoxyethylene polyoxypropylene block copolymer has an HLB value of 8-12; the average molecular weight of the polyoxyethylene polyoxypropylene block copolymer is 1630-2200; preferably, the polyoxyethylene polyoxypropylene block copolymer has an HLB value of 10; the average molecular weight of the oxyethylene polyoxypropylene block copolymer is 1850.
In one embodiment, the polyoxyethylene polyoxypropylene block copolymer is polyether L43.
In a preferred embodiment, the osmotic agent further comprises an organosiloxane copolymer.
In one embodiment, the weight ratio of the organosiloxane copolymer to nonionic surfactant is (1-2): 2; preferably 1.5: 2.
in one embodiment, the organosiloxane copolymer is a (mercapto) methylsiloxane-dimethylsiloxane copolymer (CAS number 102783-03-9).
Solvent(s)
In one embodiment, the solvent is water and a C1-C6 alcohol.
In one embodiment, the weight ratio of water to C1-C6 alcohol is (4.5-6): 1; preferably, the ratio of 5: 1.
examples of C1-C6 alcohols include methanol, ethanol, propanol, butanol, pentanol, etc.
In a preferred embodiment, the solvent is water and ethanol in a weight ratio of 5: 1.
the second aspect of the invention provides a preparation method of a hot-pressed photon polycrystalline semiconductor material, which at least comprises the following steps:
(1) respectively crushing inorganic powder, rare earth materials and silicate, uniformly mixing, and calcining in a high-temperature furnace at 1200 ℃ for 60-80min to obtain a mixture 1;
(2) adding the mixture 1 into a reaction kettle for reaction for 16-20h, wherein the temperature is 900-;
(3) and (3) stirring the mixture 2 prepared in the step (2) and the penetrating agent in a solvent for 2-4h to obtain a mixture 3, heating the elastomer to 160-170 ℃, adding the mixture 3, stirring for 10-15h, and granulating in an extruder to obtain the elastomer.
The third aspect of the invention provides an application of the hot-pressing photon polycrystalline semiconductor material, and the application field is the technical field of medical equipment.
The applicant develops a material with better far infrared emissivity, and on the basis of research, the applicant further researches the application, and finds that the hot-pressing photon polycrystalline semiconductor material has higher far infrared emissivity through a large amount of researches, and unexpectedly finds that the hot-pressing photon polycrystalline semiconductor material in the application can accurately generate a peak waveband of 5-7 micrometers under the action of light and sound, so that the temperature rise of a machine body is facilitated. Possible reasons for the above technical effects are: (1) the inorganic powder, the silicate and the rare earth material can fully play a role by taking a polyurethane thermoplastic elastomer as a core, can generate a peak waveband of 5-7 micrometers under the action of common acousto-optic resonance of a wave generator and a light wave generator, and achieve the effect of improving the body temperature, and simultaneously, because a human body is an organism and has more water in the body, the infrared characteristic absorption peaks of water molecules are at 3 and 6 micrometers, the hot-pressing photon polycrystalline semiconductor material is more beneficial to the improvement of the body temperature of a human body, and protein molecules in the human body can absorb infrared light with the wavelength of 1-3 micrometers and 5-7 micrometers, so that the vibration of amido bonds in the protein molecules can be caused, the biological energy is promoted to be transferred along the protein molecules, and the health of the human body is more beneficial; (2) in the invention, the polyoxyethylene polyoxypropylene segmented copolymer with the HLB value of 8-12 can well cooperate with the (mercapto) methyl siloxane-dimethyl siloxane copolymer to promote the adsorption of the polyurethane thermoplastic elastomer and inorganic raw materials in a system, so that the hot-pressing photon polycrystalline semiconductor material has a more stable structure and can fully play a role; (3) the addition of the amino hollow mesoporous silica can improve the surface defects of zirconia, cerium oxide and antimony oxide, so that the electron-hole concentration in the system is improved, and the far infrared emissivity of the hot-pressing photon polycrystalline semiconductor material is increased; (5) the rare earth organic complex and rare earth salt are doped in zirconium oxide, cerium oxide and antimony oxide under the synergistic effect, and then are subjected to the synergistic effect with the calcium pyroxene and the magnesium tourmaline, so that the emissivity of the hot-pressed photon polycrystalline semiconductor material is further increased.
Several specific examples of the present invention are given below, but the present invention is not limited by the examples.
In addition, the starting materials in the present invention are commercially available unless otherwise specified.
Examples
Example 1
A hot-pressing photon polycrystal semiconductor material comprises the following raw materials, by weight, 15 parts of inorganic powder, 8 parts of silicate, 4 parts of rare earth materials, 22 parts of high polymer, 7 parts of penetrating agent and 50 parts of solvent;
the inorganic powder is inorganic oxide; the inorganic oxide is a combination of zirconium oxide, cerium oxide, antimony oxide and silicon dioxide; the weight ratio of zirconia, cerium oxide, antimony oxide and silicon dioxide is 1: 2: 1.2: 0.4; the zirconia has an average particle size of 20 nm; the length of the cerium oxide is 10nm, and the diameter of the cerium oxide is 5 nm; the average grain diameter of the antimony oxide is 30 nm; the silicon dioxide is amino hollow mesoporous silicon dioxide, and the average diameter of the silicon dioxide is 300 nm;
the silicate is a combination of hedenbergite and dravite, and the weight ratio of the silicate to the dravite is 1: 2;
the rare earth material comprises a rare earth salt; the rare earth salt is scandium sulfate (CAS number: 52788-54-2); the rare earth material also comprises a rare earth organic complex; the weight ratio of the rare earth organic complex to the rare earth salt is 1: 1.2;
the raw materials of the rare earth organic complex comprise thiophene formyl trifluoroacetone (CAS number: 326-91-0) and europium chloride (CAS number: 1025-76-0); the molar ratio of the thenoyl trifluoroacetone to the europium chloride is 3: 1;
the preparation method of the rare earth organic complex comprises the following steps: (1) dissolving thenoyl trifluoroacetone in 10 times of anhydrous ethanol, and then adjusting the pH value to 6.5 to obtain a material A; (2) adding europium chloride into the material A to react for 6 hours at 55 ℃ to obtain a material B; (3) after the material B is cooled to room temperature, evaporating the absolute ethyl alcohol in the material B to obtain a material C; (4) washing the material C5 times with acetone, and drying to constant weight to obtain rare earth organic complex;
the high molecular polymer is a thermoplastic elastomer; the thermoplastic elastomer is a polyurethane thermoplastic elastomer; the polyurethane thermoplastic elastomer is Germany Bayer
955U；
The osmotic agent includes a nonionic surfactant; the nonionic surfactant is polyoxyethylene polyoxypropylene block copolymer; the HLB value of the polyoxyethylene polyoxypropylene block copolymer is 10; the average molecular weight of the oxyethylene polyoxypropylene block copolymer is 1850; the polyoxyethylene polyoxypropylene segmented copolymer is polyether L43; the penetrant further includes an organosiloxane copolymer; the weight ratio of the organosiloxane copolymer to the nonionic surfactant is 1: 2; the organic siloxane copolymer is (mercapto) methyl siloxane-dimethyl siloxane copolymer (CAS number: 102783-03-9);
the solvent is water and ethanol, and the weight ratio of the solvent to the ethanol is 5: 1;
the preparation method of the hot-pressing photon polycrystalline semiconductor material comprises the following steps: (1) respectively crushing inorganic powder, rare earth materials and silicate, uniformly mixing, and calcining in a high-temperature furnace at 1200 ℃ for 60min to obtain a mixture 1; (2) adding the mixture 1 into a reaction kettle for reaction for 16 hours, wherein the temperature is 900 ℃, the pressure is 10MPa, cooling and grinding to obtain a mixture 2; (3) and (3) stirring the mixture 2 prepared in the step (2) and a penetrating agent in a solvent for 2 hours to obtain a mixture 3, heating an elastomer to 160 ℃, adding the mixture 3, stirring for 10 hours, and granulating in an extruder to obtain the elastomer.
The purchase factories of zirconia, ceria and amino hollow mesoporous silica are Jiangsu Xianfeng nanometer material science and technology limited company; the antimony oxide was purchased from Suzhou sailing Biotechnology Ltd.
Example 2
A hot-pressing photon polycrystal semiconductor material comprises the following raw materials, by weight, 20 parts of inorganic powder, 12 parts of silicate, 6 parts of rare earth materials, 27 parts of high polymer, 9 parts of penetrating agent and 55 parts of solvent;
the inorganic powder is inorganic oxide; the inorganic oxide is a combination of zirconium oxide, cerium oxide, antimony oxide and silicon dioxide; the weight ratio of zirconium oxide, cerium oxide, antimony oxide and silicon dioxide is 1: 2.6: 1.6: 0.6; the average grain diameter of the zirconia is 40 nm; the length of the cerium oxide is 40nm, and the diameter of the cerium oxide is 10 nm; the average grain diameter of the antimony oxide is 50 nm; the silicon dioxide is amino hollow mesoporous silicon dioxide, and the average diameter of the silicon dioxide is 500 nm;
the silicate is a combination of hedenbergite and dravite, and the weight ratio of the silicate to the dravite is 1: 3;
the rare earth material comprises a rare earth salt; the rare earth salt is scandium sulfate (CAS number: 52788-54-2); the rare earth material also comprises a rare earth organic complex; the weight ratio of the rare earth organic complex to the rare earth salt is 1: 1.7; the raw materials of the rare earth organic complex comprise thiophene formyl trifluoroacetone (CAS number: 326-91-0) and europium chloride (CAS number: 1025-76-0); the molar ratio of the thenoyl trifluoroacetone to the europium chloride is 3: 1;
the preparation method of the rare earth organic complex comprises the following steps: (1) dissolving thenoyl trifluoroacetone in 10 times of anhydrous ethanol, and then adjusting the pH value to 6.5 to obtain a material A; (2) adding europium chloride into the material A to react for 6 hours at 55 ℃ to obtain a material B; (3) after the material B is cooled to room temperature, evaporating the absolute ethyl alcohol in the material B to obtain a material C; (4) and washing the material C5 times with acetone, and drying to constant weight to obtain the rare earth organic complex.
The high molecular polymer is a thermoplastic elastomer; the thermoplastic elastomer is a polyurethane thermoplastic elastomer; the polyurethane thermoplastic elastomer is Germany Bayer
955U；
The osmotic agent comprises a non-ionic surfactant; the nonionic surfactant is polyoxyethylene polyoxypropylene block copolymer; the HLB value of the polyoxyethylene polyoxypropylene block copolymer is 10; the average molecular weight of the oxyethylene polyoxypropylene block copolymer is 1850; the polyoxyethylene polyoxypropylene segmented copolymer is polyether L43; the penetrant further includes an organosiloxane copolymer; the weight ratio of the organosiloxane copolymer to the nonionic surfactant is 2: 2; the organic siloxane copolymer is (mercapto) methyl siloxane-dimethyl siloxane copolymer (CAS number: 102783-03-9);
the solvent is water and ethanol, and the weight ratio of the solvent to the ethanol is 5: 1;
the preparation method of the hot-pressed photonic polycrystalline semiconductor material comprises the following steps: (1) respectively crushing inorganic powder, rare earth materials and silicate, uniformly mixing, and calcining in a high-temperature furnace at 1200 ℃ for 80min to obtain a mixture 1; (2) adding the mixture 1 into a reaction kettle, reacting for 20 hours at 1000 ℃ and 15MPa, cooling, and grinding to obtain a mixture 2; (3) and (3) stirring the mixture 2 prepared in the step (2) and the penetrating agent in a solvent for 4 hours to obtain a mixture 3, heating the elastomer to 170 ℃, adding the mixture 3, stirring for 15 hours, and granulating in an extruder to obtain the elastomer.
The manufacturers for the zirconia, the ceria and the amino hollow mesoporous silica are Jiangsu Xianfeng nanometer material science and technology limited company; the antimony oxide was purchased from Suzhou enlightened Biotechnology Ltd.
Example 3
The hot-pressed photon polycrystalline semiconductor material comprises, by weight, 18 parts of inorganic powder, 10 parts of silicate, 5 parts of rare earth material, 25 parts of high molecular polymer, 8 parts of penetrating agent and 52 parts of solvent.
The inorganic powder is inorganic oxide; the inorganic oxide is a combination of zirconium oxide, cerium oxide, antimony oxide and silicon dioxide; the weight ratio of zirconia, cerium oxide, antimony oxide and silicon dioxide is 1: 2.4: 1.4: 0.5; the zirconia has an average particle size of 30 nm; the length of the cerium oxide is 25nm, and the diameter of the cerium oxide is 8 nm; the average grain diameter of the antimony oxide is 40 nm; the silicon dioxide is amino hollow mesoporous silicon dioxide, and the average diameter of the silicon dioxide is 400 nm;
the silicate is a combination of the calcium iron pyroxene and the magnesium tourmaline, and the weight ratio of the silicate to the magnesium iron pyroxene is 1: 2.5;
the rare earth material comprises a rare earth salt; the rare earth salt is scandium sulfate (CAS number: 52788-54-2); the rare earth material also comprises a rare earth organic complex; the weight ratio of the rare earth organic complex to the rare earth salt is 1: 1.5; the raw materials of the rare earth organic complex comprise thiophene formyl trifluoroacetone (CAS number: 326-91-0) and europium chloride (CAS number: 1025-76-0); the molar ratio of the thenoyl trifluoroacetone to the europium chloride is 3: 1;
the preparation method of the rare earth organic complex comprises the following steps: (1) dissolving thenoyl trifluoroacetone in 10 times of anhydrous ethanol, and then adjusting the pH value to 6.5 to obtain a material A; (2) adding europium chloride into the material A to react for 6 hours at 55 ℃ to obtain a material B; (3) after the material B is cooled to room temperature, evaporating the absolute ethyl alcohol in the material B to obtain a material C; (4) and washing the material C5 times with acetone, and drying to constant weight to obtain the rare earth organic complex.
The high molecular polymer is a thermoplastic elastomer; the thermoplastic elastomer is polyurethane thermoplastic elastomer; the polyurethane thermoplastic elastomer is German Bayer
955U；
The osmotic agent includes a nonionic surfactant; the nonionic surfactant is polyoxyethylene polyoxypropylene block copolymer; the HLB value of the polyoxyethylene polyoxypropylene block copolymer is 10; the average molecular weight of the oxyethylene polyoxypropylene block copolymer is 1850; the polyoxyethylene polyoxypropylene segmented copolymer is polyether L43; the penetrant further includes an organosiloxane copolymer; the weight ratio of the organosiloxane copolymer to the nonionic surfactant is 1.5: 2; the organic siloxane copolymer is (mercapto) methyl siloxane-dimethyl siloxane copolymer (CAS number: 102783-03-9);
the solvent is water and ethanol, and the weight ratio of the solvent to the solvent is 5: 1;
the preparation method of the hot-pressed photonic polycrystalline semiconductor material comprises the following steps: (1) respectively crushing inorganic powder, rare earth materials and silicate, uniformly mixing, and calcining in a high-temperature furnace at 1200 ℃ for 70min to obtain a mixture 1; (2) adding the mixture 1 into a reaction kettle for reacting for 18h, wherein the temperature is 950 ℃, the pressure is 12MPa, cooling and grinding to obtain a mixture 2; (3) and (3) stirring the mixture 2 prepared in the step (2) and a penetrating agent in a solvent for 3 hours to obtain a mixture 3, heating an elastomer to 165 ℃, adding the mixture 3, stirring for 12 hours, and granulating in an extruder to obtain the elastomer.
The manufacturers for the zirconia, the ceria and the amino hollow mesoporous silica are Jiangsu Xianfeng nanometer material science and technology limited company; the antimony oxide was purchased from Suzhou sailing Biotechnology Ltd.
As shown in fig. 1-3: FIG. 1 is a plot of the relative radiant energy spectrum of a hot-pressed photonic polycrystalline semiconductor material in example 3 in the presence of sound; FIG. 2 is a plot of the relative radiation spectrum of the hot-pressed photonic polycrystalline semiconductor material of example 3 in the presence of a light source; FIG. 3 is a graph of the relative radiation energy spectrum of the hot-pressed photonic polycrystalline semiconductor material of example 3 in the presence of both acousto-optic.
The hot-pressing photon polycrystalline semiconductor material can accurately generate a peak waveband of 5-7 microns under the condition of simultaneous existence of acousto-optic, and the waveband is particularly good for a human body.
Example 4
The specific implementation mode of the hot-pressed photonic polycrystalline semiconductor material is the same as that in example 3, except that the inorganic oxides are zirconium oxide, cerium oxide and antimony oxide, and the weight ratio of the inorganic oxides to the inorganic oxides is 1: 2.4: 1.4.
example 5
A hot-pressed photonic polycrystalline semiconductor material is provided in the same manner as in example 3, except that neodymium acetate is used instead of the rare earth organic complex.
Example 6
The specific implementation mode of the hot-pressed photonic polycrystalline semiconductor material is the same as that of example 3, except that a rare earth organic complex is not contained.
Example 7
The specific implementation mode of the hot-pressed photonic polycrystalline semiconductor material is the same as that in example 3, except that the weight ratio of the rare earth organic complex to the rare earth salt is 1: 0.5.
performance testing
Far infrared emissivity: the thermal pressed photonic polycrystalline semiconductor materials of the examples were tested using an EMS302M far infrared emissivity tester, and the results are shown in table 1 below.
TABLE 1
| Emissivity of radiation | |
| Example 1 | 88.60％ |
| Example 2 | 88.50％ |
| Example 3 | 88.80％ |
| Example 4 | 86.40％ |
| Example 5 | 85.30％ |
| Example 6 | 71.60％ |
| Example 7 | 78.90％ |
The foregoing examples are merely illustrative and serve to explain some of the features of the method of the present invention. The appended claims are intended to claim as broad a scope as can be conceived and the examples presented herein are merely illustrative of selected implementations in accordance with all possible combinations of examples. Accordingly, it is applicants' intention that the appended claims are not to be limited by the choice of examples illustrating features of the invention. Also, where numerical ranges are used in the claims, subranges therein are included, and variations in these ranges are also to be construed as possible being covered by the appended claims.
Claims (10)
1. The hot-pressed photon polycrystalline semiconductor material is characterized in that the raw materials comprise, by weight, 10-33 parts of inorganic powder, 5-15 parts of silicate, 2-10 parts of rare earth materials, 15-30 parts of high polymer, 5-15 parts of penetrating agent and 35-65 parts of solvent.
2. The hot-pressed photonic polycrystalline semiconductor material according to claim 1, wherein the inorganic powder is an inorganic oxide; the inorganic oxide is at least one selected from zirconia, titanium dioxide, cerium oxide, antimony oxide, zinc oxide, silicon dioxide, aluminum oxide and tin dioxide.
3. The thermopressed photonic polycrystalline semiconductor material according to claim 2, wherein the silicate is a combination of hedenbergite and dravite in a weight ratio of 1: (2-3).
4. The hot-pressed photonic polycrystalline semiconductor material of claim 1, wherein the rare earth material comprises a rare earth salt.
5. The hot-pressed photonic polycrystalline semiconductor material of claim 1, wherein the rare earth salt is selected from at least one of cerium acetate, neodymium acetate, samarium acetate, europium acetate, dysprosium acetate, scandium sulfate, holmium acetate, erbium acetate, and cerium acetate.
6. The hot-pressed photonic polycrystalline semiconductor material according to claim 4 or 5, wherein the rare earth material further comprises a rare earth organic complex; the weight ratio of the rare earth organic complex to the rare earth salt is 1: (1-2).
7. The hot-pressed photonic polycrystalline semiconductor material according to claim 6, wherein the rare earth organic complex comprises thiophene formyl trifluoroacetone and europium chloride.
8. The hot-pressed photonic polycrystalline semiconductor material according to claim 1, wherein the infiltrant comprises a non-ionic surfactant.
9. A method of preparing a hot-pressed photonic polycrystalline semiconductor material according to any one of claims 1 to 8, comprising at least the following steps:
(1) respectively crushing inorganic powder, rare earth materials and silicate, uniformly mixing, and calcining in a high-temperature furnace at 1200 ℃ for 60-80min to obtain a mixture 1;
(2) adding the mixture 1 into a reaction kettle for reaction for 16-20h, wherein the temperature is 900-1000 ℃, the pressure is 10-15MPa, cooling and grinding to obtain a mixture 2;
(3) and (3) stirring the mixture 2 prepared in the step (2) and the penetrating agent in a solvent for 2-4h to obtain a mixture 3, heating the elastomer to 160-170 ℃, adding the mixture 3, stirring for 10-15h, and granulating in an extruder to obtain the elastomer.
10. Use of a hot-pressed photonic polycrystalline semiconductor material according to any one of claims 1 to 8, wherein the field of use is medical device technology.
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