CN114774879A - Coating device and coating method for silicon carbide single crystal wafer - Google Patents
Coating device and coating method for silicon carbide single crystal wafer Download PDFInfo
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- CN114774879A CN114774879A CN202210542806.8A CN202210542806A CN114774879A CN 114774879 A CN114774879 A CN 114774879A CN 202210542806 A CN202210542806 A CN 202210542806A CN 114774879 A CN114774879 A CN 114774879A
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- 238000000576 coating method Methods 0.000 title claims abstract description 97
- 239000011248 coating agent Substances 0.000 title claims abstract description 90
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 67
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 66
- 239000013078 crystal Substances 0.000 title claims abstract description 37
- 239000007789 gas Substances 0.000 claims abstract description 208
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims abstract description 86
- 239000007888 film coating Substances 0.000 claims abstract description 33
- 238000009501 film coating Methods 0.000 claims abstract description 33
- 239000011261 inert gas Substances 0.000 claims abstract description 29
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 9
- 238000002347 injection Methods 0.000 claims description 68
- 239000007924 injection Substances 0.000 claims description 68
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 38
- 238000003860 storage Methods 0.000 claims description 36
- 230000005540 biological transmission Effects 0.000 claims description 34
- 238000001816 cooling Methods 0.000 claims description 33
- 239000000498 cooling water Substances 0.000 claims description 8
- 238000005336 cracking Methods 0.000 claims description 7
- 238000005086 pumping Methods 0.000 claims description 5
- 238000010521 absorption reaction Methods 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 3
- 238000005507 spraying Methods 0.000 abstract description 3
- 239000007921 spray Substances 0.000 abstract 1
- 238000007789 sealing Methods 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 239000000284 extract Substances 0.000 description 2
- 235000015842 Hesperis Nutrition 0.000 description 1
- 235000012633 Iberis amara Nutrition 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 239000003208 petroleum Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4411—Cooling of the reaction chamber walls
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45578—Elongated nozzles, tubes with holes
Abstract
The invention discloses a coating device of a silicon carbide single crystal wafer, which relates to the technical field of wafer treatment, and comprises a coating box body, an inert gas input assembly and a methane gas input assembly, wherein the inner side of the coating box body is provided with a coating cavity for coating the silicon carbide single crystal wafer; the positioning mechanism is arranged in the film coating cavity and used for positioning and fixing the wafer; the invention also discloses a coating method of the silicon carbide single crystal wafer, wherein the silicon carbide wafer to be coated is transversely arranged between the two gas spraying cylinders, when the second gas spraying holes on the two sides spray methane gas, the methane gas can uniformly contact with the upper surface and the lower surface of the silicon carbide wafer, so that the methane gas is cracked on the surface of the silicon carbide wafer to form a carbon film, and the stability and the uniformity are higher.
Description
Technical Field
The invention relates to the technical field of wafer processing, in particular to a coating device and a coating method for a silicon carbide single wafer.
Background
The wide band gap material represented by SiC and GaN is the third generation semiconductor following Si and GaAs, compared with Si and GaAs, SiC has the advantages of wide band gap, high thermal conductivity, high breakdown field strength, high saturated electron drift rate, chemical stability, high hardness, abrasion resistance, high bonding energy and the like, so SiC is particularly suitable for manufacturing high-temperature, high-frequency, high-power, radiation-resistant and corrosion-resistant electronic devices, and the SiC device can be used in important fields such as artificial satellites, rockets, radars and communication, aerospace aircrafts, ocean exploration, earthquake prediction, petroleum drilling, mechanical processing, automobile electronization and the like.
The patent document 201510005208.7 entitled "coating method and apparatus for silicon carbide single crystal wafer" discloses that 60000Pa inert gas is injected into a graphite chamber, methane gas is injected after maintaining pressure, so that methane gas is cracked to form carbon films on the surface of the silicon carbide wafer, however, when methane gas is injected, methane enters from the top of the chamber, the crystal to be coated is horizontally arranged at the bottom in the chamber, the contact time between the upper surface and the lower surface of the crystal and methane is different, and the carbon films formed by cracking the upper surface and the lower surface of the crystal by methane are very uneven, thereby affecting the production and processing quality.
Disclosure of Invention
The invention aims to provide a coating device for a silicon carbide single crystal wafer, which solves the following technical problems:
when methane gas is introduced, methane enters from the top of the furnace chamber, the coated crystal is transversely arranged at the bottom in the furnace chamber, the contact time of the upper surface and the lower surface of the crystal and methane is different, and the carbon film formed by cracking the upper surface and the lower surface of the crystal is uneven, so that the production and processing quality is influenced.
The purpose of the invention can be realized by the following technical scheme:
a coating device for a silicon carbide single crystal wafer comprises a coating box body, an inert gas input assembly and a methane gas input assembly; the inner side of the film coating box body is provided with a film coating cavity for performing film coating treatment on the silicon carbide single crystal wafer;
an annular cooling groove is arranged on the outer side of the film coating cavity, and is connected with a water conveying mechanism and used for conveying external cooling water into the annular cooling groove to cool the film coating cavity;
the inert gas input assembly is used for transmitting external inert gas into the coating cavity and comprises a gas storage box body arranged at the bottom of the coating box body and a first gas transmission part;
the methane gas input assembly is used for conveying external methane gas into the film coating cavity, and comprises a gas storage cylinder, a second gas conveying part and two groups of gas injection cylinders which are transversely arranged in the film coating cavity;
the positioning mechanism is arranged in the film coating cavity and used for positioning and fixing the wafer;
wherein, the gas injection pipes and the gas injection cylinders are distributed on the periphery of the positioning mechanism to carry out omnibearing gas injection coating treatment on the wafer.
Preferably, a plurality of groups of gas nozzles are arranged in the coating cavity relatively, a plurality of groups of first gas injection holes are arranged on the outer circular surface of each gas nozzle at intervals, one end of the first gas transmission part is connected with the gas storage box body, the other end of the first gas transmission part is connected with the gas nozzles, and the first gas transmission part is used for transmitting the inert gas in the gas storage box body to the gas nozzles.
The outer circular surface of the gas injection cylinder is provided with a plurality of groups of second gas injection holes at intervals, one end of the second gas transmission part is connected with the gas storage cylinder, the other end of the second gas transmission part is connected with the gas injection cylinder, and the second gas transmission part is used for transmitting methane gas in the gas storage cylinder to the gas injection cylinder.
Preferably, the positioning mechanism is used for positioning and fixing the silicon carbide wafer to be coated, and comprises positioning support seats which are oppositely arranged in the coating cavity, the positioning support seats are fixedly connected with the air injection cylinder, telescopic springs are oppositely arranged on the surface of the air injection cylinder, one ends of the telescopic springs are fixedly connected with the positioning support seats, the other ends of the telescopic springs are fixedly connected with the movable seat, the movable seat is slidably mounted on the surface of the air injection cylinder, and positioning plates are oppositely and fixedly mounted on the upper side and the lower side of the movable seat;
the positioning plate is provided with a positioning clamping groove used for fixing the wafer.
Preferably, the first gas transmission part comprises a plurality of groups of cylinders arranged outside the film coating cavity, a first piston is arranged in each cylinder, the first piston is connected with a first pushing mechanism driving the first piston to reciprocate in each cylinder, one end of each cylinder is connected with the gas storage box body through a first gas inlet pipe, a one-way valve only used for gas inlet is arranged between each first gas inlet pipe and each cylinder, a first gas transmission pipe is arranged on the other side of each cylinder, one side, far away from each cylinder, of each first gas transmission pipe is connected with a gas injection pipe, and a one-way valve only used for gas exhaust is arranged between each first gas transmission pipe and each cylinder;
the second air conveying component comprises an air pump arranged on the surface of the air storage cylinder, one end of the air pump is connected with the air storage cylinder, the other end of the air pump is connected with a second air conveying pipe through a second air inlet pipe, and the second air conveying pipe is respectively connected with the air injection cylinder.
Preferably, the water delivery mechanism is including arranging the piston cylinder at coating film box top, set up the second piston in the piston cylinder, the second piston is rather than the second pushing mechanism fixed connection who drives its reciprocating motion in the piston cylinder, piston cylinder one end sets up the inlet tube, is equipped with the check valve that only limits in intaking between inlet tube and piston cylinder, and the opposite side sets up the raceway, is equipped with the check valve that only limits in the drainage between raceway and piston cylinder, and the one end that the piston cylinder was kept away from to the raceway is connected with the annular cooling groove, and the annular cooling groove bottom sets up the wash port for discharge the water of inslot.
Preferably, a pushing mechanism is including arranging the support at first intake pipe top, and the support surface sets up driving motor, driving motor output end fixed connection pivot, the terminal fixed connection carousel that extends of pivot, carousel surface edge one side set up the bayonet lock, and the bayonet lock outside sets up the push pedal, is provided with the logical groove with bayonet lock cooperation swing joint between the push pedal, push pedal and push rod fixed connection, each first piston passes through branch and ring carrier fixed connection, the push rod is kept away from the one end and the ring carrier fixed connection of push pedal.
Preferably, the second pushing mechanism comprises a cam arranged between the rotating shafts, the second piston is fixedly connected with a piston rod, the piston rod extends to the outer side of the piston cylinder, the tail end of the piston rod is in contact with the outer circular surface of the cam, a return spring is arranged on the outer side of the piston rod, one end of the return spring is fixedly connected with the piston cylinder, and the other end of the return spring is fixedly connected with the piston rod.
Preferably, the coating cavity outside still is provided with sealing door, the sealing door edge is that circumference array has arranged the multiunit locating hole, and the coating film box surface is that circumference array has arranged the multiunit locating lever, and sealing door passes through the locating hole and the locating lever is fixed in the coating film cavity outside.
The invention also discloses a coating method of the silicon carbide single crystal wafer, which comprises the following steps:
s1, pulling the positioning plates towards the two sides on the surface of the air injection cylinder, extruding the telescopic spring to contract to generate elasticity while the positioning plates move towards the positioning support, transversely placing the silicon carbide wafer between the two positioning plates, and positioning and fixing the silicon carbide wafer by the positioning plates at the two sides under the pushing of the elastic force of the telescopic spring;
s2, a first piston is pushed to reciprocate in a cylinder through a first pushing mechanism, the cylinder extracts inert gas in a gas storage box body through a first gas inlet pipe, then the inert gas is conveyed to a gas injection pipe through a first gas conveying pipe, and the inert gas is injected into a coating cavity through a plurality of groups of first gas injection holes arranged on the surface of the gas injection pipe;
s3, heating the film coating cavity, starting an air pump at the same time, pumping out gas in the air storage cylinder by the air pump, then conveying methane gas into the air injection cylinder through a second air inlet pipe and a second air conveying pipe, and forming a carbon film on the surface of the silicon carbide wafer after cracking the methane gas;
and S4, after the film coating is finished, cooling is needed to be carried out, the second piston is pushed to reciprocate in the piston cylinder, the second piston conveys outside cooling water into the annular cooling groove through the water inlet pipe and the water conveying pipe, cooling treatment is further carried out in the film coating cavity, and the water after heat absorption and temperature rise is discharged from the water discharge hole.
The invention has the beneficial effects that:
(1) the film coating device disclosed by the invention has the advantages that multiple groups of air injection pipes and air injection cylinders are distributed on the periphery of the positioning mechanism so as to carry out omnibearing air injection film coating treatment on the wafer, when the film coating treatment is carried out on the silicon carbide single wafer, the internal temperature of a film coating cavity needs to be increased, after film coating, the film coating cavity needs to be cooled in time, external cooling water is continuously conveyed into the annular cooling tank through the water conveying mechanism, and because the annular cooling tank is tightly attached to the outer side of the film coating cavity, the heat in the film coating cavity can be effectively absorbed, and the rapid cooling treatment on the film coating cavity is realized;
(2) according to the film coating method disclosed by the invention, the silicon carbide wafer to be coated is transversely arranged between the two gas injection cylinders, and when the second gas injection holes on the two sides inject methane gas, the methane gas can be uniformly contacted with the upper surface and the lower surface of the silicon carbide wafer, so that the stability and the uniformity of a carbon film formed by cracking the methane gas on the surface of the silicon carbide wafer are higher.
Drawings
The invention is further described below with reference to the accompanying drawings.
FIG. 1 is a schematic view showing a structure of a coating apparatus for a silicon carbide single crystal wafer according to the present invention;
FIG. 2 is a schematic structural view of a silicon carbide single-wafer coating apparatus in a side view from the left;
FIG. 3 is a schematic rear side view of a silicon carbide single-wafer coating apparatus according to the present invention;
FIG. 4 is a schematic view showing a structure of a coating cavity of a coating apparatus for a silicon carbide single crystal wafer according to the present invention;
FIG. 5 is an enlarged schematic view of a coating apparatus for a silicon carbide single crystal wafer of the present invention shown at A in FIG. 2;
FIG. 6 is a schematic view showing a structure of a seal gate of an apparatus for coating a silicon carbide single crystal wafer according to the present invention;
FIG. 7 is a schematic structural view of a cylinder in a coating apparatus for a silicon carbide single crystal wafer according to the present invention;
FIG. 8 is a schematic view showing the construction of a turntable in an apparatus for coating a silicon carbide single crystal wafer according to the present invention;
FIG. 9 is a schematic structural view of a piston cylinder in the coating apparatus for a silicon carbide single crystal wafer according to the present invention.
In the figure: 1. coating a film box body; 2. a water inlet pipe; 3. a rotating shaft; 4. a cam; 5. a drive motor; 6. a support; 7. a piston cylinder; 8. a first intake pipe; 9. a cylinder; 10. a strut; 11. an annular support; 12. an air cylinder; 13. a gas storage tank body; 14. a second intake pipe; 15. a second gas delivery pipe; 16. an air pump; 17. positioning a rod; 18. a turntable; 19. positioning a plate; 20. positioning a clamping groove; 21. a gas-jet cylinder; 22. a second gas injection hole; 23. a gas ejector tube; 24. a first gas injection hole; 25. positioning a support; 26. a tension spring; 27. a first gas delivery pipe; 28. pushing a plate; 29. a bayonet lock; 30. a push rod; 31. a return spring; 32. a piston rod; 33. a second piston; 34. a water delivery pipe; 35. an annular cooling tank; 36. coating a film cavity; 37. a first piston; 38. a movable seat; 39. and (7) sealing the door.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Example 1
Referring to fig. 1-4, the invention relates to a coating device for a silicon carbide single crystal wafer, which comprises a coating box body 1, an inert gas input assembly and a methane gas input assembly, wherein the inner side of the coating box body 1 is provided with a coating cavity 36 for coating the silicon carbide single crystal wafer;
the annular cooling groove 35 is arranged outside the coating cavity 36, the annular cooling groove 35 is connected with the water delivery mechanism and is used for delivering external cooling water into the annular cooling groove 35 to achieve cooling of the coating cavity 36, when the silicon carbide single crystal wafer is subjected to coating treatment in the using process, the temperature inside the coating cavity 36 needs to be raised, after coating, the coating cavity 36 needs to be cooled in time, the external cooling water is continuously delivered into the annular cooling groove 35 through the water delivery mechanism, and the annular cooling groove 35 is tightly attached to the outer side of the coating cavity 36, so that heat in the coating cavity 36 can be effectively absorbed, and rapid cooling treatment of the coating cavity 36 is achieved;
the inert gas input assembly is used for conveying external inert gas into the coating cavity 36, and comprises a gas storage box body 13 and a first gas transmission part, the gas storage box body 13 is arranged at the bottom of the coating box body 1, a plurality of groups of gas nozzles 23 are oppositely arranged in the coating cavity 36, a plurality of groups of first gas injection holes 24 are arranged on the outer circular surface of the gas nozzles 23 at intervals, one end of the first gas transmission part is connected with the gas storage box body 13, the other end of the first gas transmission part is connected with the gas nozzles 23, the first gas transmission part is used for conveying the inert gas in the gas storage box body 13 to the gas nozzles 23, when the inert gas needs to be introduced into the coating cavity 36, the first gas transmission part is started, the first gas transmission part conveys the inert gas in the gas storage box body 13 to the gas nozzles 23 and simultaneously injects the inert gas into the coating cavity 36 through the plurality of groups of first gas injection holes 24 arranged on the surface of the gas nozzles 23, and the plurality of groups of gas injection holes 23 are arranged in a circumferential array in the coating cavity 36, therefore, the gas injection pipe 23 can inject inert gas in multiple directions in the coating cavity 36, so that the inert gas injection is more uniform;
the methane gas input assembly is used for transmitting external methane gas into the coating cavity 36, and comprises an air storage cylinder 12, a second gas transmission part and two groups of gas injection cylinders 21 transversely arranged in the coating cavity 36, wherein a plurality of groups of second gas injection holes 22 are arranged on the outer circumferential surface of the gas injection cylinder 21 at intervals, one end of the second gas transmission part is connected with the air storage cylinder 12, the other end of the second gas transmission part is connected with the gas injection cylinders 21, the second gas transmission part is used for transmitting the methane gas in the air storage cylinder 12 to the gas injection cylinders 21, when the methane gas needs to be input into the coating cavity 36, the second gas transmission part is started, the second gas transmission part transmits the methane gas in the air storage cylinder 12 to the gas injection cylinders 21, then the methane gas is injected into the coating cavity 36 through the plurality of groups of second gas injection holes 22 arranged on the outer circumferential surface of the gas injection cylinders 21, the gas injection cylinders 21 are provided with two groups, and the silicon carbide wafer to be coated is transversely arranged between the two gas injection cylinders 21, when the second gas injection holes 22 on two sides inject methane gas, the methane gas can be uniformly contacted with the upper surface and the lower surface of the silicon carbide wafer, so that the stability and the uniformity of the carbon film formed by cracking the methane gas on the surface of the silicon carbide wafer are higher.
Referring to fig. 4-6, a positioning mechanism is further disposed in the coating cavity 36, the positioning mechanism is used for positioning and fixing the silicon carbide wafer to be coated, the positioning mechanism includes a positioning support 25 oppositely disposed in the coating cavity 36, the positioning support 25 is fixedly connected to the gas nozzle 21, a telescopic spring 26 is disposed on the surface of the gas nozzle 21 oppositely, one end of the telescopic spring 26 is fixedly connected to the positioning support 25, the other end is fixedly connected to the movable seat 38, the movable seat 38 is slidably mounted on the surface of the gas nozzle 21, positioning plates 19 are fixedly mounted on the upper and lower sides of the movable seat 38, when the silicon carbide wafer to be coated is positioned and fixed, the positioning plates 19 are pulled towards the two sides on the surface of the gas nozzle 21, the positioning plates 19 move towards the positioning support 25 and simultaneously press the telescopic spring 26 to contract to generate elastic force, so as to place the silicon carbide wafer horizontally between the two positioning plates 19, under the pushing of the elastic force of the extension spring 26, the positioning plates 19 on the two sides position and fix the silicon carbide wafer;
in the embodiment, by arranging the gas cylinders 21, the gas cylinders 21 can convey the methane gas into the coating cavity 36, and by arranging the positioning mechanism for positioning and fixing the silicon carbide wafer between the gas cylinders 21, the methane gas can timely and effectively contact with the surface of the silicon carbide wafer when being sprayed out of the second gas spraying holes 22, so that the stability is higher;
referring to fig. 7-9, further, the ends of the positioning plates 19 at two sides, which are far away from each other, protrude outward to form positioning slots 20 on the inner surface, and in the actual use process, the two ends of the silicon carbide wafer to be coated are clamped in the positioning slots 20 between the positioning plates 19, so that the positioning plates 19 have higher stability when fixing the silicon carbide wafer.
The first gas transmission part comprises a plurality of groups of cylinders 9 arranged outside the coating cavity 36, wherein a first piston 37 is arranged in each cylinder 9, said first piston 37 is connected to a first pushing mechanism which drives it to reciprocate in the cylinder 9, one end of the cylinder 9 is connected with the gas storage box body 13 through a first gas inlet pipe 8, a one-way valve which is only used for gas inlet is arranged between the first gas inlet pipe 8 and the cylinder 9, a first gas pipe 27 is arranged at the other side of the cylinder 9, one side of the first air delivery pipe 27 far away from the air cylinder 9 is connected with the air injection pipe 23, a one-way valve which is only used for exhausting is arranged between the first air delivery pipe 27 and the air cylinder 9, when the inert gas is input, the first piston 37 is pushed by the first pushing mechanism to reciprocate in the cylinder 9, the cylinder 9 extracts the inert gas in the gas storage box body 13 through the first gas inlet pipe 8, and then conveys the inert gas to the gas injection pipe 23 through the first gas conveying pipe 27;
the second gas transmission component comprises a gas pump 16 arranged on the surface of the gas storage cylinder 12, one end of the gas pump 16 is connected with the gas storage cylinder 12, the other end of the gas pump is connected with a second gas transmission pipe 15 through a second gas inlet pipe 14, the second gas transmission pipe 15 is respectively connected with the gas injection cylinder 21, when methane gas is input into the coating cavity 36, the gas pump 16 is started, the gas in the gas storage cylinder 12 is pumped out by the gas pump 16, and then the methane gas is conveyed into the gas injection cylinder 21 through the second gas inlet pipe 14 and the second gas transmission pipe 15.
The water delivery mechanism comprises a piston cylinder 7 arranged at the top of the film coating box body 1, a second piston 33 is arranged in the piston cylinder 7, the second piston 33 is fixedly connected with a second pushing mechanism which drives the second piston to reciprocate in the piston cylinder 7, one end of the piston cylinder 7 is provided with a water inlet pipe 2, a check valve which is only limited to water inlet is arranged between the water inlet pipe 2 and the piston cylinder 7, the other side of the piston cylinder is provided with a water delivery pipe 34, a check valve which is only limited to water drainage is arranged between the water delivery pipe 34 and the piston cylinder 7, one end of the water delivery pipe 34, far away from the piston cylinder 7, is connected with an annular cooling groove 35, the bottom end of the annular cooling groove 35 is provided with a water drainage hole for draining water in the groove, when a film coating cavity 36 is cooled, the second piston 33 is pushed to reciprocate in the piston cylinder 7 by the second pushing mechanism, the second piston 33 delivers outside cooling water into the annular cooling groove 35 through the water inlet pipe 2 and the water delivery pipe 34, further cooling the coating cavity 36, and discharging the water after absorbing heat and raising temperature from the drain hole;
the first pushing mechanism comprises a bracket 6 arranged at the top of a first air inlet pipe 8, a driving motor 5 is arranged on the surface of the bracket 6, the output end of the driving motor 5 is fixedly connected with the rotating shaft 3, the tail end of the rotating shaft 3 extends and is fixedly connected with the rotating disc 18, one side of the surface edge of the rotating disc 18 is provided with a bayonet 29, the outer side of the bayonet 29 is provided with a push plate 28, a through groove which is matched and movably connected with the bayonet 29 is arranged between the push plates 28, the push plates 28 are fixedly connected with the push rod 30, each first piston 37 is fixedly connected with the annular bracket 11 through a support rod 10, one end of the push rod 30, which is far away from the push plate 28, is fixedly connected with the annular bracket 11, the driving motor 5 is started, the driving motor 5 drives the rotary table 18 to rotate through the rotating shaft 3, the rotary table 18 pushes the annular bracket 11 to reciprocate in the horizontal direction through the bayonet 29, the push plate 28 and the push rod 30, the annular bracket 11 pushes the first piston 37 to move in the cylinder 9 in a reciprocating way through the support rod 10;
the second pushing mechanism comprises a cam 4 arranged between rotating shafts 3, a second piston 33 is fixedly connected with a piston rod 32, the piston rod 32 extends to the outer side of a piston cylinder 7, the tail end of the piston rod 32 is in contact with the outer circular surface of the cam 4, a return spring 31 is arranged on the outer side of the piston rod 32, one end of the return spring 31 is fixedly connected with the piston cylinder 7, the other end of the return spring is fixedly connected with the piston rod 32, the rotating shafts 3 drive the cam 4 to rotate in the rotating process, the cam 4 pushes the second piston 33 to move in the piston cylinder 7 through the piston rod 32 in the rotating process, and the return spring 31 drives the piston rod 32 and the second piston 33 to reset.
The outer side of the coating cavity 36 is also provided with a sealing door 39, the edge of the sealing door 39 is provided with a plurality of groups of positioning holes in a circumferential array, the surface of the coating box body 1 is provided with a plurality of groups of positioning rods 17 in a circumferential array, and the sealing door 39 is fixed on the outer side of the coating cavity 36 through the positioning holes and the positioning rods 17.
Example 2
A film coating method of a film coating device of a silicon carbide single crystal wafer specifically comprises the following steps:
s1, pulling the positioning plates 19 towards the two sides on the surface of the air injection cylinder 21, pressing the expansion spring 26 to contract to generate elastic force while the positioning plates 19 move towards the positioning support 25, transversely placing the silicon carbide wafer between the two positioning plates 19, and positioning and fixing the silicon carbide wafer by the positioning plates 19 at the two sides under the pushing of the elastic force of the expansion spring 26;
s2, the first piston 37 is pushed by the first pushing mechanism to reciprocate in the cylinder 9, the cylinder 9 pumps the inert gas in the gas storage box body 13 through the first gas inlet pipe 8, then the inert gas is conveyed to the gas injection pipe 23 through the first gas conveying pipe 27, and the inert gas is injected into the coating cavity 36 through a plurality of groups of first gas injection holes 24 arranged on the surface of the gas injection pipe 23;
s3, heating the film coating cavity 36, starting the air pump 16 at the same time, pumping out the gas in the air storage cylinder 12 by the air pump 16, then conveying the methane gas into the air injection cylinder 21 through the second air inlet pipe 14 and the second air conveying pipe 15, and forming a carbon film on the surface of the silicon carbide wafer after cracking the methane gas;
and S4, after the film coating is finished, cooling is needed to be carried out, the second piston 33 is pushed to reciprocate in the piston cylinder 7, the second piston 33 conveys outside cooling water into the annular cooling groove 35 through the water inlet pipe 2 and the water conveying pipe 34, then cooling treatment is carried out in the film coating cavity 36, and the water after heat absorption and temperature rise is discharged from the water discharge hole.
In the description of the present invention, it should be understood that the terms "upper", "lower", "left", "right", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings only for convenience in describing the present invention and simplifying the description, but do not indicate or imply that the device or element referred to must have a specific orientation and a specific orientation configuration and operation, and thus, should not be construed as limiting the present invention. Furthermore, "first" and "second" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or to implicitly indicate a number of the indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means two or more unless otherwise specified.
In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and the like are to be construed broadly and may be, for example, fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; they may be directly connected or indirectly connected through intervening media, or may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
While one embodiment of the present invention has been described in detail, the description is only a preferred embodiment of the present invention and should not be taken as limiting the scope of the invention. All equivalent changes and modifications made within the scope of the present invention shall fall within the scope of the present invention.
Claims (10)
1. The utility model provides a coating device of carborundum single crystal piece, is equipped with coating film cavity (36) that are used for carrying out the coating film to the wafer including coating film box (1) in the coating film box (1), its characterized in that still includes:
the inert gas input assembly comprises a gas storage box body (13) arranged at the bottom of the coating box body (1) and a first gas transmission part, wherein the first gas transmission part is used for pumping the inert gas in the gas storage box body (13) to be transmitted to a gas injection pipe (23) arranged in the coating cavity (36), and
the device comprises a methane gas input assembly and a positioning mechanism, wherein the methane gas input assembly comprises a gas storage cylinder (12) and a second gas transmission component, the second gas transmission component is used for pumping out methane in the gas storage cylinder (12) to be transmitted to a gas injection cylinder (21) arranged in a coating cavity (36), and the positioning mechanism is arranged in the coating cavity (36) and is used for positioning and fixing a wafer;
wherein, a plurality of groups of gas injection pipes (23) and gas injection cylinders (21) are arranged on the periphery of the positioning mechanism to carry out omnibearing gas injection coating treatment on the wafer.
2. The apparatus for coating a silicon carbide single crystal wafer according to claim 1, wherein the gas injection tube (23) is provided with a first gas injection hole (24), and the gas injection tube (21) is provided with a second gas injection hole (22).
3. The coating device of the silicon carbide single crystal wafer according to claim 2, wherein the first gas transmission part comprises a cylinder (9), one end of the cylinder (9) is provided with a first gas inlet pipe (8) connected with the gas storage box body (13), the other end of the cylinder is provided with a first gas transmission pipe (27) connected with the gas injection pipe (23), a first piston (37) is arranged in the cylinder (9), and the first piston (37) is connected with a first pushing mechanism driving the first piston to reciprocate.
4. The coating apparatus for a silicon carbide single crystal wafer according to claim 2, wherein the second gas supply means comprises a gas pump (16), the gas pump (16) supplying the gas in the gas cylinder (12) to the gas injection cylinder (21) through the second gas supply pipe (14).
5. The coating device of the silicon carbide single crystal wafer according to claim 4, wherein the positioning mechanism comprises a positioning support (25) connected with the gas injection cylinder (21), the positioning support (25) is connected with the movable seat (38) through a telescopic spring (26), positioning plates (19) are arranged on two sides of the movable seat (38), and a positioning clamping groove (20) for clamping the wafer is arranged on one side, close to the positioning plates (19), of the two sides.
6. The coating device for the silicon carbide single crystal wafer according to claim 5, wherein the first pushing mechanism comprises a driving motor (5), the driving motor (5) is connected with a rotating disc (18) through a rotating shaft (3), a clamping pin (29) is arranged on the rotating disc (18), the clamping pin (29) is movably embedded in a through groove of a pushing plate (28), the pushing plate (28) is connected with the annular bracket (11) through a pushing rod (30), and the first piston (37) is connected with the annular bracket (11).
7. The silicon carbide single crystal wafer coating apparatus according to claim 1, wherein an annular cooling tank (35) for cooling the coating cavity (36) is further provided in the coating tank body (1), and the annular cooling tank (35) is connected to the water supply mechanism.
8. The silicon carbide single crystal wafer coating device according to claim 7, wherein the water delivery mechanism comprises a piston cylinder (7), one end of the piston cylinder (7) is provided with a water inlet pipe (2) connected with the water storage tank, the other end of the piston cylinder is provided with a water delivery pipe (34) connected with the annular cooling groove (35), a second piston (33) is arranged in the piston cylinder (7), and the second piston (33) is connected with a second pushing mechanism driving the second piston to reciprocate.
9. The coating device for the silicon carbide single crystal wafer according to claim 8, wherein the second pushing mechanism comprises a cam (4), the second piston (33) is connected with a piston rod (32), the end of the piston rod (32) abuts against the outer circular surface of the cam (4), and a return spring (31) is arranged outside the piston rod (32).
10. A coating method of the coating apparatus for the silicon carbide single crystal wafer according to any one of claims 1 to 9, comprising the steps of:
s1, pulling the positioning plates (19) towards two sides on the surface of the air injection cylinder (21), extruding the expansion spring (26) to contract to generate elastic force while the positioning plates (19) move towards the positioning support (25), transversely placing the silicon carbide wafer between the two positioning plates (19), and positioning and fixing the silicon carbide wafer by the positioning plates (19) at two sides under the pushing of the elastic force of the expansion spring (26);
s2, the first pushing mechanism pushes the first piston (37) to reciprocate in the cylinder (9), the cylinder (9) pumps out the inert gas in the gas storage box body (13) through the first gas inlet pipe (8), then the inert gas is conveyed to the gas injection pipe (23) through the first gas conveying pipe (27), and the inert gas is injected into the coating cavity (36) through a plurality of groups of first gas injection holes (24) arranged on the surface of the gas injection pipe (23);
s3, heating the film coating cavity (36), starting the air pump (16), pumping out the gas in the air storage cylinder (12) by the air pump (16), then conveying the methane gas into the air injection cylinder (21) through the second air inlet pipe (14) and the second air conveying pipe (15), and forming a carbon film on the surface of the silicon carbide wafer after cracking the methane gas;
s4, after film coating is completed, cooling needs to be carried out, the second piston (33) is pushed to move in a piston cylinder (7) in a reciprocating mode, the second piston (33) conveys outside cooling water into an annular cooling groove (35) through a water inlet pipe (2) and a water conveying pipe (34), cooling and cooling treatment are further carried out on the interior of a film coating cavity (36), and water after heat absorption and temperature rise is discharged from a water discharge hole.
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| CN202210542806.8A CN114774879A (en) | 2022-05-19 | 2022-05-19 | Coating device and coating method for silicon carbide single crystal wafer |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002121676A (en) * | 2000-10-13 | 2002-04-26 | Ulvac Japan Ltd | Thermal cvd apparatus for forming graphite nano-fiber thin film |
| CN1962933A (en) * | 2006-10-23 | 2007-05-16 | 四川大学 | Carbon film coating method and device for quartz crucible for use in crystal growth |
| CN102560425A (en) * | 2012-01-18 | 2012-07-11 | 湖南南方搏云新材料有限责任公司 | Chemical vapor deposition furnace |
| CN104498901A (en) * | 2015-01-06 | 2015-04-08 | 北京华进创威电子有限公司 | Method and device for plating silicon carbide single crystal |
-
2022
- 2022-05-19 CN CN202210542806.8A patent/CN114774879A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002121676A (en) * | 2000-10-13 | 2002-04-26 | Ulvac Japan Ltd | Thermal cvd apparatus for forming graphite nano-fiber thin film |
| CN1962933A (en) * | 2006-10-23 | 2007-05-16 | 四川大学 | Carbon film coating method and device for quartz crucible for use in crystal growth |
| CN102560425A (en) * | 2012-01-18 | 2012-07-11 | 湖南南方搏云新材料有限责任公司 | Chemical vapor deposition furnace |
| CN104498901A (en) * | 2015-01-06 | 2015-04-08 | 北京华进创威电子有限公司 | Method and device for plating silicon carbide single crystal |
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