CN1147735C - Magnetic sensitive vibrator - Google Patents
Magnetic sensitive vibratorInfo
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- CN1147735C CN1147735C CNB991137973A CN99113797A CN1147735C CN 1147735 C CN1147735 C CN 1147735C CN B991137973 A CNB991137973 A CN B991137973A CN 99113797 A CN99113797 A CN 99113797A CN 1147735 C CN1147735 C CN 1147735C
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Abstract
The present invention relates to a magnetic sensitive vibrator which belongs to the field of magnetoelectric conversion and sensing technologies. The magnetic sensitive vibrator is composed of a Colpitts oscillator, an amporphous magnetic body strip 1 and a resistance-capacitance low-pass filter, wherein the Colpitts oscillator comprises an electrical inductor 12 whose inner part is placed with the amporphous magnetic body strip 1 which is made of an iron base nanometer or cobalt base material. The present invention has the advantages of compact circuit, small volume, wide operating temperature range, etc., and is suitable for detecting magnetic fields or magnetic field intensity and other quantities capable of being converted into the magnetic field intensity. The present invention is a new technology which is easy to popularize and implement.
Description
Technical field
The present invention relates to a kind of magnetic sensitive vibrator, belong to magnetoelectricity conversion and field of sensing technologies.
Background technology
Jap.P. JP09080134A (spy opens flat 9-80134) relates to a kind of Magnetic Sensor of Ke's ear pieze vibration type.Circuit as shown in Figure 1.This sensor mainly be one by amorphism magnet wire 1, resistance 2, electric capacity 3, transistor 4, resistance 5, magnetic bias coil 6, variable resistor 7, Ke's ear pieze oscillator that electric capacity 8 and inductance 12 are formed, wherein the LC oscillation circuit removes and contains inductance 12, outside electric capacity 3 and the electric capacity 8, also contain amorphism magnet wire 1, amorphism magnet wire 1 is through being electrically connected across between the collector of inductance 12 and transistor 4.This signal of sensor Vosc is through the collector output of transistor 4.Vosc is a radiofrequency signal by a small margin, needs after the processing of detecting circuit 9 and dc amplification circuit 10, could be with the form of DC voltage through output terminal 11 outputs.The advantage of this sensor is when this sensor is in the magnetic field, and its output signal Vosc is that amplitude is subjected to magnetic field in the radiofrequency signal along the modulation of the component on amorphism magnet wire 1 direction, and promptly this sensor has magnetosensitive, can finish the magnetoelectricity conversion.The shortcoming of this sensor is to have between amorphism magnet wire 1 and the circuit to be electrically connected; Vosc is a radiofrequency signal by a small margin, needs could use through aftertreatment, and amorphism magnet wire 1 needs magnetic bias, post processing circuitry, and detecting circuit 9, dc amplification circuit 10, with biasing circuit, magnetic bias coil 6, variable resistor 7 have increased the complicacy of circuit; This sensor can only be in supply voltage be about the voltage range of Vcc ± 0.2Vcc operate as normal, adapt to the ability of power supply voltage variation.Another kind of background technology is classical Ke's ear pieze oscillator.The circuit of this oscillator is shown in the dashdotted left of Fig. 2: this oscillator is by electric capacity 3, transistor 4, and resistance 5, electric capacity 8, inductance 12, resistance 13, resistance 21 and electric capacity 22 are formed, and wherein the inside of inductance 12 is air-cores.The advantage of this oscillator is to produce the constant amplitude radiofrequency signal, and this signal is with the emitter output of direct current signal from transistor 4.The shortcoming of this oscillator is that this oscillator does not have magnetosensitive, can not finish the magnetoelectricity conversion; This oscillator can only be in supply voltage be about the voltage range of Vcc ± 0.2Vcc operate as normal, adapt to the ability of power supply voltage variation.
Summary of the invention
An object of the present invention is to provide a kind of circuit succinct, magnetosensitive is arranged and can finish the magnetic sensitive vibrator of magnetoelectricity conversion, wherein do not have between amorphism magnet band and the circuit and be electrically connected; Circuit does not contain biasing circuit and post processing circuitry.This purpose realizes by the following technical solutions: the inside that amorphism magnet band is placed the inductance of classical Ke's ear pieze oscillator; Resistance-let low-pass filter is connected across the two ends of emitter resistance, and output signal is from the output terminal output of this wave filter.
Another object of the present invention provides a kind of strong magnetic sensitive vibrator of ability that adapts to power supply voltage variation.This purpose realizes by the following technical solutions: the two ends that resistance-diode voltage regulator are connected across power supply; The transistorized base stage in classical Ke's ear pieze oscillator and the output terminal of this voltage stabilizer are linked together.
Existing accompanying drawings circuit of the present invention is formed, and connects and principle of work.A kind of magnetic sensitive vibrator, contain classical Ke's ear pieze oscillator and power supply, classical Ke's ear pieze oscillator comprises first electric capacity 3, transistor 4, first resistance 5, second electric capacity 8, inductance 12, second resistance 13 and the singly-terminal pair, power source voltage is Vcc, the inside of inductance 12 is air-cores, power supply just, negative pole is connected with ground end 20 with power positive end 18 respectively, the emitter of transistor 4 is connected with ground end 20 with singly-terminal pair by first resistance 5 respectively with base stage, second resistance 13 is connected across between the base stage of power positive end 18 and transistor 4, inductance 12 is connected across between the collector of power positive end 18 and transistor 4, first electric capacity 3 is connected across between the emitter of power positive end 18 and transistor 4, second electric capacity 8 is connected across between the collector and emitter of transistor 4, it is characterized in that, it also contains amorphism magnet band 1 and resistance-let low-pass filter, the β value of transistor 4 is between 40～360, inductance 12 is that the enameled wire coiling of 0.035～0.35mm forms by diameter, the external diameter of inductance 12, internal diameter, the length and the number of turn are respectively 1.5～3.5mm, 1～3mm, 2～30mm and 50～120 circles, amorphism magnet band 1 is to be made by iron-based sodium rice material or cobalt-based material, the length of amorphism magnet band 1, width and thickness are respectively 4～24mm, 1～3mm and 25～30 μ m, amorphism magnet band 1 is placed in the air-core of inductance 12, resistance-let low-pass filter is in series by the 4th resistance 16 and the 3rd electric capacity 17, the free end of the 4th resistance 16 and the 3rd electric capacity 17 is connected with ground end 20 with the emitter of transistor 4 respectively, the tie point of the 4th resistance 16 and the 3rd electric capacity 17 is connected with output terminal 19, the capacity of the resistance of the time constant of resistance-let low-pass filter=the 4th resistance 16 * the 3rd electric capacity 17, between 10 μ s～1s, the described singly-terminal pair network that to be the 3rd resistance 21 forward connect with the network of the 4th electric capacity 22 parallel connections or first diode 14 and second diode 15.
Principle of work.Above-mentioned magnetic sensitive vibrator is to work under the power supply of power supply of Vcc at voltage.Amorphism magnet band 1 is a kind of new material with giant magnetoresistance effect.H is that unit is mT along amorphism magnet band 1 direction and the magnetic field intensity of passing the magnetic field of this band.
If the described singly-terminal pair network in parallel that be the 3rd resistance 21 with the 4th electric capacity 22.See Fig. 2.When H=0mT, amorphism magnet band 1 does not possess the condition that shows its giant magnetoresistance effect, and the impedance of this band is low, and the eddy current consume is big, causes the Q value of inductance 12 low, and transistor 4 can not be kept the vibration of LC oscillation circuit, the magnetic sensitive vibrator failure of oscillation.Second resistance 13 and the 3rd resistance 21 are formed voltage divider, be connected across between power positive end 18 and the ground end 20, the base voltage of transistor 4 is 1.2V, the emitter voltage of transistor 4 is 0.5V, this voltage is through resistance-let low-pass filter, from output terminal 19 outputs, become the output signal Vout of magnetic sensitive vibrator.Vout＝0.5V。When 0mT＜H≤0.7mT, amorphism magnet band 1 begins to show its giant magnetoresistance effect under the low-intensity magnetic field effect, but it is still not obvious, the impedance of this band raises, and the eddy current consume reduces, and causes the Q value of inductance 12 to raise, transistor 4 can have been kept the vibration of LC oscillation circuit, the magnetic sensitive vibrator starting of oscillation, but not strong, Vout is a bit larger tham 0.5V.When 0.7mT＜H≤1.5mT, amorphism magnet band 1 is than showing tangible giant magnetoresistance effect under the strong magnetic field action, and the impedance of this band obviously raises, and the Q value of inductance 12 is rising obviously, and magnetic sensitive vibrator vibrates strongly, 0.6V＜Vout≤3.5V.When H＞1.5mT, Vout is slightly less than 3.5V, but permanent in 3.25V, i.e. 3.25V＜Vout≤3.5V.See Fig. 4.This magnetic sensitive vibrator can not the sensing magnetic direction, and as H＜0mT, this magnetic sensitive vibrator will be exported and | the Vout that H| is corresponding.This magnetic sensitive vibrator can only be in supply voltage be about the scope of Vcc ± 0.2Vcc operate as normal, as supply voltage not in above-mentioned scope, it is very far away that the base voltage of transistor 4 departs from 1.2V, normal working point is difficult to set up, influence operate as normal, so the ability of this magnetic sensitive vibrator adaptation power supply voltage variation still can not be satisfactory.
In sum, this magnetic sensitive vibrator circuit is succinct; Do not have between amorphism magnet band 1 and the circuit and be electrically connected; Magnetosensitive is arranged, can finish magnetoelectricity conversion, though this magnetic sensitive vibrator can only the sensing magnetic field intensity, direction that can not sensing magnetic field; Output signal Vout exports through resistance-let low-pass filter; The ability that adapts to power supply voltage variation is still unsatisfactory.
The network that if described singly-terminal pair is first diode 14 forward connects with second diode 15.See Fig. 3.The H-Vout magnetoelectricity transformational relation of the H-Vout magnetoelectricity transformational relation of this magnetic sensitive vibrator and above-mentioned magnetic sensitive vibrator is basic identical, has not just repeated here.Unique difference of this magnetic sensitive vibrator and above-mentioned magnetic sensitive vibrator is the biasing of transistor 4, now be described as follows: second resistance 13 is formed resistance one diode voltage regulator with first diode 14 that forward is cascaded and second diode 15, be connected across between power positive end 18 and the ground end 20, no matter power source voltage Vcc is what value in 6～24V scope, the anode voltage of first diode 14, be the permanent 1.2V of being of base voltage of transistor 4, the power source voltage Vcc change is to the not influence of working point of transistor 4, and the ability that this magnetic sensitive vibrator adapts to power supply voltage variation is strong.
Compare with background technology, the present invention has following advantage:
1. circuit is succinct.Do not have between amorphism magnet band 1 and the circuit and be electrically connected, do not contain biasing circuit and post processing circuitry, volume is small and exquisite, and low cost of manufacture is suitable for producing in batches.
2. the magnetoelectricity transformational relation has definite regularity.The H-Vout curve contains precipitous line segment, magnetoelectricity converting sensitivity height.
3. amorphism magnet band 1 still has stable giant magnetoresistance effect when high temperature, and the temperature range of amorphism magnet band 1 work is wide.
4. can be in the supply voltage scope (operate as normal in 6～24V) of broadness.
Description of drawings
Fig. 1 is Jap.P. JP09080134A, the circuit diagram of the Magnetic Sensor of Ke's ear pieze vibration type.Fig. 2 is a kind of circuit diagram of magnetic sensitive vibrator.Fig. 3 is a kind of strong magnetic sensitive vibrator of power supply voltage variation ability that adapts to.Fig. 4 magnetoelectricity transformational relation (H-Vout) curve that to be Fig. 2 or magnetic sensitive vibrator shown in Figure 3 draw during for 15V in power source voltage Vcc.
Embodiment
Embodiment 1.
In the present embodiment: amorphism magnet band 1 is to be made by iron-based sodium rice material, and its length and width are respectively 20mm and 2mm; The capacity of first electric capacity 3 is 51PF; Transistor 4 is β value NPN type silicon radio-frequency (RF) transistors between 100～300; The resistance of first resistance 5 is 510 Ω; The capacity of second electric capacity 8 is 51PF; The internal diameter of inductance 12, external diameter and length are respectively 2mm, and 2.5mm and 25mm, inductance 12 are that the enameled wire of 0.1mm twines 100 circles and forms by diameter; The resistance of the 4th resistance 16 is 100K Ω, and the capacity of the 3rd electric capacity 17 is 510PF, and the time constant of resistance-let low-pass filter is 51 μ s; The resistance of second resistance 13 is 33K Ω; The described singly-terminal pair network in parallel that be the 3rd resistance 21 with the 4th electric capacity 22, the resistance of the 3rd resistance 21 is 2.7K Ω, the capacity of the 4th electric capacity 22 is 5100PF; Power source voltage Vcc is 15V.
Embodiment 2.
In the present embodiment: the resistance of second resistance 13 is 16K Ω; The described singly-terminal pair network that to be first diode 14 forward connect with second diode 15, first diode 14 and second diode 15 are silicon rectifier diode; Power source voltage Vcc is 6～24V.In addition, the specification of all the other components and parts and requirement and embodiment's 1 is identical.
The present invention is suitable for being used for surveying magnetic field or magnetic field intensity, be particularly suitable for being used for surveying magnetic field or magnetic field intensity in the hot environment, also can be used to measure other amount that can be converted to magnetic field intensity, as electric current, displacement, strain, flow etc., in addition, volume of the present invention is small and exquisite, is suitable for further being used for the integrated magnetic sensor of manufacturer's standard.So the present invention is a new technology that is easy to promotion and implementation and can produces great economic benefit.
Claims (3)
1. magnetic sensitive vibrator, contain classical Ke's ear pieze oscillator and power supply, classical Ke's ear pieze oscillator comprises first electric capacity (3), transistor (4), first resistance (5), second electric capacity (8), inductance (12), second resistance (13) and singly-terminal pair, power source voltage is Vcc, the inside of inductance (12) is air-core, power supply just, negative pole is connected with ground end (20) with power positive end (18) respectively, the emitter of transistor (4) is connected with ground end (20) with singly-terminal pair by first resistance (5) respectively with base stage, second resistance (13) is connected across between the base stage of power positive end (18) and transistor (4), inductance (12) is connected across between the collector of power positive end (18) and transistor (4), first electric capacity (3) is connected across between the emitter of power positive end (18) and transistor (4), second electric capacity (8) is connected across between the collector and emitter of transistor (4), it is characterized in that, it also contains amorphism magnet band (1) and resistance-let low-pass filter, the β value of transistor (4) is between 40～360, inductance (12) is that the enameled wire coiling of 0.035～0.35mm forms by diameter, the external diameter of inductance (12), internal diameter, the length and the number of turn are respectively 1.5～3.5mm, 1～3mm, 2～30mm and 50～120 circles, amorphism magnet band (1) is to be made by iron-based sodium rice material or cobalt-based material, the length of amorphism magnet band (1), width and thickness are respectively 4～24mm, 1～3mm and 25～30 μ m, amorphism magnet band (1) is placed in the air-core of inductance (12), resistance-let low-pass filter is in series by the 4th resistance (16) and the 3rd electric capacity (17), the free end of the 4th resistance (16) and the 3rd electric capacity (17) is connected with ground end (20) with the emitter of transistor (4) respectively, the tie point of the 4th resistance (16) and the 3rd electric capacity (17) is connected with output terminal (19), the capacity of the resistance of the time constant of resistance-let low-pass filter=the 4th resistance (16) * the 3rd electric capacity (17), between 10 μ s～1s, the described singly-terminal pair network that to be the 3rd resistance (21) forward connect with the 4th electric capacity (22) network in parallel or first diode (14) and second diode (15).
2. magnetic sensitive vibrator according to claim 1 is characterized in that, amorphism magnet band (1) is to be made by iron-based sodium rice material, and its length and width are respectively 20mm and 2mm; The capacity of first electric capacity (3) is 51PF; Transistor (4) is the NPN type silicon radio-frequency (RF) transistors of β value between 100～300; The resistance of first resistance (5) is 510 Ω; The capacity of second electric capacity (8) is 51PF; The internal diameter of inductance (12), external diameter and length are respectively 2mm, 2.5mm and 25mm, inductance (12) is that the enameled wire of 0.1mm twines 100 circles and forms by diameter, the resistance of the 4th resistance (16) is 100K Ω, the capacity of the 3rd electric capacity (17) is 510PF, and the time constant of resistance-let low-pass filter is 51 μ s; The resistance of second resistance (13) is 33K Ω; Described singly-terminal pair is the 3rd resistance (21) and the 4th electric capacity (22) network in parallel, and the resistance of the 3rd resistance (21) is 2.7K Ω, and the capacity of the 4th electric capacity (22) is 5100PF; Power source voltage Vcc is 15V.
3. magnetic sensitive vibrator according to claim 1 is characterized in that, the resistance of second resistance (13) is 16K Ω; The described singly-terminal pair network that to be first diode (14) forward connect with second diode (15), first diode (14) and second diode (15) they are silicon rectifier diode; Power source voltage Vcc is 6～24V.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB991137973A CN1147735C (en) | 1999-06-18 | 1999-06-18 | Magnetic sensitive vibrator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB991137973A CN1147735C (en) | 1999-06-18 | 1999-06-18 | Magnetic sensitive vibrator |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1244663A CN1244663A (en) | 2000-02-16 |
| CN1147735C true CN1147735C (en) | 2004-04-28 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB991137973A Expired - Fee Related CN1147735C (en) | 1999-06-18 | 1999-06-18 | Magnetic sensitive vibrator |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1147735C (en) |
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1999
- 1999-06-18 CN CNB991137973A patent/CN1147735C/en not_active Expired - Fee Related
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| CN1244663A (en) | 2000-02-16 |
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